# Power MOSFET, P Channel, 20 V, 2.6 A, 0.135 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1888166RL/)

**URL**: https://novapart.co/products/IRLML2246TRPBF/power-mosfet-p-channel-20-v-26-a-0135-ohm-sot-23
**SKU**: IRLML2246TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0640
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.09o; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.6A |
| Drain Source On State Resistance | 0.135ohm |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1888166RL/)

PD - 97630A 

## IRLML2246TRPbF 

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HEXFET Power MOSFET<br>**----- End of picture text -----**<br>


|**VDS**|**-20**|**V**|
|---|---|---|
|**VGS Max**|**±12**|**V**|
|**RDS(on) max**<br>(@VGS= -4.5V)|**135**|**m**|
|**RDS(on) max**<br>(@VGS= -2.5V)|**236**|**m**|



Micro3[TM] (SOT-23) IRLML2246TRPbF 

## **Application(s)** 

- System/Load Switch 

## **Features and Benefits** 

|**Features and Benefits**|||
|---|---|---|
|**Features**||**Benefits**|
|Industry-standardpinout||Multi-vendor compatibility|
|Compatible with existingSurface Mount Techniques|results in|Easier manufacturing|
|RoHScompliant containingno lead,no bromide and no halogen||Environmentallyfriendly|
|MSL1,Consumerqualification||Increased reliability|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-Source Voltage|-20|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ -10V|-2.6|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ -10V|-2.1||
|IDM|Pulsed Drain Current|-11||
|PD@TA= 25°C|Maximum Power Dissipation|1.3|W|
|PD@TA= 70°C|Maximum Power Dissipation|0.80||
||Linear DeratingFactor|0.01|W/°C|
|VGS|Gate-to-Source Voltage|± 12|V|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



_See detailed ordering and shipping information on the last page of this data sheet._ 

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## **Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~Rs~~|**Parameter**<br>~~Rs~~|**Min. **<br>~~Rs~~<br>~~GO~~<br>~~Id~~|**Typ. **<br>~~Rs~~<br>~~GO~~<br>~~DD~~|**Max. **<br>~~Rs~~<br>~~GO~~<br>~~DD OD~~|**Units**<br>~~Rs~~<br>~~OD~~|**Conditions**<br>~~Rs~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|-20<br>~~GO~~<br>~~es~~<br>~~Id~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~<br>~~DD~~|–––<br>~~GO~~<br>~~es~~<br>~~DD OD~~<br>~~QO~~|V<br>~~es~~<br>~~OD~~<br>~~QO~~|VGS= 0V, ID= -250μA<br>~~es~~|
|V(BR)DSS/TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~Id ~~<br>~~es~~<br>~~Gs~~<br>~~a~~|9.5<br> ~~DD~~<br>~~es~~|–––<br>~~DD OD~~<br>~~es~~<br>~~QO~~<br>~~EE~~|mV/°C<br>~~OD~~<br>~~es~~<br>~~QO~~<br>~~EE~~|Reference to 25°C, ID= -1mA<br>~~es~~<br>~~EE~~<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Se~~|–––<br>~~Gs~~<br>~~Se~~<br>~~a~~|90<br>~~Se~~|135<br>~~QO~~<br>~~Se~~<br>~~EE~~|m<br>~~QO~~<br>~~Se~~<br>~~EE~~<br>~~OD~~|VGS= -4.5V, ID= -2.6A<br>~~Se~~<br>~~EE~~<br>~~®~~|
|||–––<br>~~Se~~<br>~~a~~<br>~~Id~~|157<br>~~Se~~<br>~~DD~~|236<br>~~Se~~<br>~~EE~~<br>~~DD OD~~||VGS= -2.5V, ID= -2.1A<br>~~Se~~<br>~~EE~~<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|-0.4<br>~~a~~<br>~~es~~<br>~~Id~~<br>~~a~~|–––<br>~~es~~<br>~~DD~~|-1.1<br>~~EE~~<br>~~es~~<br>~~DD OD~~<br>~~EE~~|V<br>~~EE~~<br>~~es~~<br>~~OD~~<br>~~EE~~|VDS= VGS, ID= -10μA<br>~~EE~~<br>~~®~~<br>~~es~~<br>~~EE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Ee~~|–––<br>~~Id ~~<br>~~Ee~~<br>~~a~~|–––<br> ~~DD~~<br>~~Ee~~|-1.0<br>~~DD OD~~<br>~~Ee~~<br>~~EE~~|μA<br>~~OD~~<br>~~Ee~~<br>~~EE~~|VDS= -16V, VGS= 0V<br>~~Ee~~<br>~~EE~~|
|||–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~|-150<br>~~Ee~~<br>~~EE~~||VDS= -16V, VGS= 0V, TJ= 125°C<br>~~Ee~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage|–––<br>~~a~~|–––|100<br>~~EE~~|nA<br>~~EE~~<br>~~GO~~|VGS= 12V<br>~~EE~~|
||Gate-to-Source Reverse Leakage<br>~~es~~|–––<br>~~es~~<br>~~Gs~~|–––<br>~~es~~<br>~~GD~~|-100<br>~~es~~<br>~~GD~~||VGS= -12V|
|RG|Internal Gate Resistance<br>~~es~~|–––<br>~~es~~<br>~~Gs~~<br>~~Gs~~|16<br>~~es~~<br>~~GD~~<br>~~GD~~|–––<br>~~es~~<br>~~GD~~<br>~~GD~~|<br>~~es~~<br>~~GO~~<br>~~GO~~|~~es~~|
|gfs|Forward Transconductance<br>~~es~~|3.4<br>~~Gs ~~<br>~~es~~<br>~~Gs~~<br>~~es es~~|–––<br> ~~GD~~<br>~~es~~<br>~~GD~~<br>~~es~~|–––<br>~~GD~~<br>~~es~~<br>~~GD~~|S<br>~~GO~~<br>~~es~~<br>~~GO~~|VDS= -10V, ID= -2.6A<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~Gs ~~<br>~~es~~<br>~~es es~~<br>~~es~~<br>|2.9<br> ~~GD~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|–––<br>~~GD~~<br>~~es~~|nC<br>~~GO~~|VDS=-10V<br>VGS= -4.5V<br>ID= -2.6A<br>@<br>@|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es es~~<br>~~es~~<br>~~es~~<br>~~**es**~~|0.52<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~**es**~~|1.2<br>~~es~~<br>~~Ge~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es ~~<br>~~es~~|–––<br>~~es~~<br> ~~**es**~~<br>~~es es~~|5.3<br>~~es~~<br>~~Ge~~<br>~~es~~<br>~~es~~|–––|ns|VDD=-10V<br>VGS= -4.5V<br>RG= 6.8<br>ID= -1.0A<br>@<br>@|
|tr|Rise Time<br> <br>~~es~~<br>~~es~~|–––<br> ~~**es** ~~<br>~~es~~<br>~~es es~~<br>~~es es~~|7.7<br> ~~Ge~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es es~~<br>~~es~~<br>~~es es~~<br>~~es~~|26<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ge~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es es~~<br>~~es~~<br>~~es~~<br>~~es es~~|16<br>~~es~~<br>~~es~~<br>~~Ge~~<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es es~~<br>~~es es~~|220<br> ~~Ge~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= -16V<br>ƒ= 1.0KHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es es~~<br>~~es~~<br>~~es es~~<br>~~es~~|70<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es es~~<br>~~es~~<br>~~es~~|48<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||



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100 100<br>VGS VGS<br>TOP           -10V TOP           -10V<br>-4.5V -4.5V<br>-3.0V -3.0V<br>CoCo -2.5V on -2.5V<br>-2.3V -2.3V<br>-2.0V -2.0V<br>10 CN CU -1.8V 10 CMI CH -1.8V<br>BOTTOM -1.5V BOTTOM -1.5V<br>(V/—S Oe ee an<br>Vip Mf<br>1 1<br>CA ert OP. -1.5V<br>-1.5V<br>ce ooo C7 ee<br>60μs PULSE WIDTH 60μs PULSE WIDTH<br>0.1 ieHH Tj = 25°C yy 0.1 ieoe Tj = 150°C rn<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 1.6<br>ID = -2.6A<br>VGS = -4.5V<br>1.4<br>ee ee ee<br>10<br>1.2<br>es ee ee eee eee eee<br>ee ee ee oad eee ee pra<br>1.0<br>1 T J  = 150°C TJ = 25°C<br>As LTT<br>pL V DS  = -15V iz 0.8<br>60μs PULSE WIDTH<br>0.1 | 0.6<br>s/h ene eee eee<br>0.5 1.0 1.5 2.0 2.5 3.0 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 14.0<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Ciss   = C  = C gs + Cgd,  C+ Cgd,  Cgd,  C,  C ds SHORTEDSHORTED<br>C  = C 12.0<br>rss  oss   gd + Cgdgd<br>|Se|Se|| Coss  rss  oss   = Cds + Cgdds + Cgdgd + Cgdgd<br>10.0<br>1000<br>C iss<br>C<br>oss<br>100 C rss<br>10 AHHHHHH «=<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>-VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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10000 14.0<br>VGS   = 0V,       f = 1 MHZGS   = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ<br>Ciss   = Ciss   = C  = C gs + Cgd,  C+ Cgd,  Cgd,  C,  C ds SHORTEDSHORTED ID= -2.6A<br>C  = C 12.0<br>|Se|Se|| Coss  rss  oss   = Cds + Cgdds + Cgdgd + Cgdgd enone VDS= -16V<br>10.0 V DS = -10V<br>1000<br>VDS= -4.0V<br>8.0<br>C iss<br>C oss 6.0<br>100 C rss<br>4.0<br>2.0<br>10 AHHHHHH «= 0.0 PA<br>1 10 100 0 1 2 3 4 5 6 7 8<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>10 10<br>1msec<br>TJ = 150°C 100μsec<br>Ff tt 10msec SME Pull<br>1 TJ = 25 ° C 1<br>TA = 25°C<br>Tj = 150°C<br>V GS  = 0V Single Pulse<br>0.1 A 0.1 LP<br>0.2 0.4 0.6 0.8 1.0 1.2 0.10 1.0 10 100<br>-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>-VGS, Gate-to-Source Voltage (V)<br>-ISD, Reverse Drain Current (A) -ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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3.0<br>Wi]<br>2.5 — ~ | | | Re yl’ D.U.T.<br>-<br>+<br>NG e e ve<br>2.01.5 PIN O bs <br><br>1.0<br>Pp) [oN] IN Pulse Width ys<br>Fig 10a.   Switching Time Test Circuit<br>CN |<br>0.5 td(on) tr td(off) tf<br>VGS<br>0.0 10%<br>25 |i 50 75 i 100 i | 125 | 150 ToSVe<br> TA , Ambient Temperature (°C) |<br>Fig 9.   Maximum Drain Current vs. 90% X |<br> Ambient Temperature VDS a,<br>Fig 10b.   Switching Time Waveforms<br>1000<br>100<br>SSE D = 0.50<br>0.20<br>10 0.10<br>0.05<br>0.02<br>1 0.01<br>0.1<br>Notes:<br>0.01 SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + TA<br>0.001 aee ee ee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>-ID,  Drain Current (A)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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300 1200<br>ID = -2.6A<br>1000<br>250<br>Oe eeSe<br>Vgs = -2.5V<br>800<br>200<br>CET) | 600  EEE<br>150<br>ONCE) = 400 HEHE<br>100 T J  = 125°C 200 Vgs = -4.5V<br>REE T = 25°C Peg ere<br>J<br>eee] EEE<br>50 0<br>1 2 3 4 5 6 7 8 9 10 11 12 0 2 4 6 8 10 12 14 16<br>-ID, Drain Current (A)<br>-VGS, Gate -to -Source Voltage  (V)<br>Fig 12.    Typical On-Resistance vs. Fig 13.    Typical On-Resistance vs.<br> Gate Voltage Drain Current<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>201 K SS<br>Vgs(th)<br>Qgodr Qgd Qgs2 Qgs1<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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1.2 1000<br>1.0<br>800<br>eet III<br>0.8<br>600<br>AS [/~.<br>0.6<br>ID = -10μA<br>ID = -250μA 400<br>7 NO N \<br>0.4<br>200<br>0.2<br>sores UA A<br>Be a<br>0.0 0<br>-75 -50 -25 0 25 50 75 100 125 150 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>TJ , Temperature ( °C ) Time (sec)<br>-VGS(th), Gate threshold Voltage (V)<br>Single Pulse Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage vs. Junction Temperature 

Typical Power vs. Time 

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DIMENSIONS<br>6 A 5 MILLIMETERS INCHES<br>D SYMBOL MIN MAX MIN MAX<br>A A Poof<br>A ee A 0.89 1.12<br>A2 C A1 0.01 0.10 0.0004<br>je ee 3 i E po A2 es 0.88 1.02<br>Al 6 E1 1 2 e 0.15 [0.006] —on M C B A I 01035 b 0.30 0.50  | 0.0040.040<br>0.10 [0.004] C c 0.08 0.20<br>T TT bo A1 athr. 3X b |fF D 2.80 | 3.04 0.012 | 0.020<br>AQ 5 B O e rb+ e1 | t | NOTES: | | @—ta 0.20 [0.008] __olln M C B A _pf0.047 E1E ||| 1.202.10 1.402.64 ott00.0030.083 ||| [0.] 0.0080. 1 20 [04]<br>| e 0.95 BSC 0.037 |  0.055BSC  |<br>if e1 1.90 BSC 0.075 BSC<br>H A 4 7 L1 Recommended Footprint |es L1L 0.540.40 | REF0.60 0.0167 | 0.024 REF<br>L2 0.25 BSC BSC<br>8 c 0.972 — +4——— eeeS 0 8 0 8<br>—— \ pPo L2 0.802 4— 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>“  7 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>L 1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>; 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23/TO-236AB) Part Marking Information 

## DATE CODE MARKING INSTRUCTIONS 

=X = IRLML2244 

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3 03 c<br>5 04 D<br>6<br>O 24 "<br>25 Y<br>26 !<br> PRECEDED BY<br>Y WEER<br>«Cc 29 c<br>£ 30 D<br>F<br>e<br>J<br>K 50 "<br>51 Y<br>52 !<br>**----- End of picture text -----**<br>


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## (SOT-23) 

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2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 6660 ¢ o— 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>VEITIRIE IIE }—<br>FEED DIRECTION 4.1 ( .161 )<br>—. t T 3.9 ( .154 ) = 1.1 ( .043 )0.9 ( .036 ) t L 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) S|<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


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|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML2246TRPbF|Micro3 (SOT-23)|Tape and Reel|**Quantity**<br>3000||



|**Qualification information**†|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|Micro3 (SOT-23)|MS L1<br>(per IPC/JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



. Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ theo Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. Pulse width  400μs; duty cycle  2%. Surface mounted on 1 in square Cu board. Refer to application note #AN-994. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/2012 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML2246TRPBF/power-mosfet-p-channel-20-v-26-a-0135-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml2246trpbf/mosfet-p-ch-w-diode-20v-2-6a-sot23/dp/1888166RL)
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