# Power MOSFET, P Channel, 20 V, 4.3 A, 0.054 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:2468051/)

**URL**: https://novapart.co/products/IRLML2244TRPBF/power-mosfet-p-channel-20-v-43-a-0054-ohm-sot-23
**SKU**: IRLML2244TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0760
**Stock**: 1000+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.3A |
| Drain Source On State Resistance | 0.054ohm |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468051/)

PD - 97631 

## IRLML2244TRPbF 

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HEXFET Power MOSFET<br>**----- End of picture text -----**<br>


|**VDS**|**-20**|**V**|
|---|---|---|
|**VGS Max**|**± 12**|**V**|
|**RDS(on) max**<br>(@VGS= -4.5V)|**54**|**m**Ω|
|**RDS(on) max**<br>(@VGS= -2.5V)|**95**|**m**Ω|



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G 1<br>3 D<br>S 2<br>Micro3 [TM] (SOT-23)<br>IRLML2244TRPbF<br>**----- End of picture text -----**<br>


## **Application(s)** 

- 

## **Features and Benefits** 

## **Features** 

## **Benefits** 

|**Features**|**Benefits**|**Benefits**|
|---|---|---|
|Low RDS(on) ( ≤54mΩ)||Lower switchinglosses|
|Industry-standardpinout||Multi-vendor compatibility|
|Compatible with existingSurface Mount Techniques|results in|Easier manufacturing|
|RoHScompliant containingno lead,no bromide and no halogen|⇒|Environmentallyfriendly|
|MSL1,Consumerqualification||Increased reliability|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-Source Voltage|-20|V|
|ID@ TA= 25°C|Continuous Drain Current,VGS@ -4.5V|-4.3|A|
|ID@ TA= 70°C|Continuous Drain Current,VGS@ -4.5V|-3.4||
|IDM|Pulsed Drain Current|-18||
|PD@TA= 25°C|Maximum Power Dissipation|1.3|W|
|PD@TA= 70°C|Maximum Power Dissipation|0.8||
||Linear DeratingFactor|0.01|W/°C|
|VGS|Gate-to-Source Voltage|± 12|V|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



Notes through are on page 10 www.irf.com 

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1/24/11 

**Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. **<br>~~Gs~~|**Typ. **<br>~~rs~~|**Max. **<br>~~ss~~|**Units**<br>~~ss~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~rs~~|-20<br>~~rs~~<br>~~Gs~~<br>~~rn~~|–––<br>~~rs~~<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~ss~~|V<br>~~rs~~<br>~~ss~~|VGS= 0V,ID= -250μA<br>~~rs~~|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~Gs~~<br>~~es~~<br>~~rn~~<br>~~e~~|0.01<br>~~rs~~<br>~~rs ~~<br>~~es~~<br>~~es~~<br>~~e~~|–––<br>~~rs~~<br> ~~ss~~<br>~~es~~|V/°C<br>~~rs~~<br>~~ss~~<br>~~es~~|Reference to 25°C,ID= -1mA<br>~~rs~~<br>~~es~~<br>~~eee~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~e~~|–––<br>~~rn~~<br>~~e~~<br>~~e~~<br>~~**|**~~|42<br>~~es~~<br>~~e~~~~**e**~~<br>~~e~~<br>~~**|**~~|54<br>~~**e**~~|mΩ<br>~~**e**~~<br>~~ds~~|VGS= -4.5V,ID= -4.3A<br>~~**e**~~<br>~~eee~~|
|||–––<br>~~e~~<br>~~e~~<br>~~**|**~~|71<br>~~e~~~~**e**~~<br>~~e~~<br>~~**|**~~<br>~~es~~|95<br>~~**e**~~<br>~~ds~~||VGS= -2.5V,ID= -3.4A<br>~~**e**~~<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage<br>~~Gs~~|-0.4<br>~~e~~<br>~~**|**~~<br>~~Gs~~<br>~~|~~|–––<br>~~e~~<br>~~**|**~~<br>~~Gs~~<br>~~es~~<br>~~|~~|-1.1<br>~~Gs~~<br>~~ds~~<br>~~|~~<br>|V<br>~~Gs~~<br>~~ds~~<br>~~|E~~<br>|VDS= VGS,ID= -10μA<br>~~eee~~<br>~~Gs~~<br>~~E~~<br>|
|IDSS|Drain-to-Source Leakage Current<br>~~Gs~~<br>~~Pe~~<br>~~ee~~|–––<br>~~Gs~~<br>~~Pe~~<br>~~|~~|–––<br>~~Gs~~<br>~~es ~~<br>~~Pe~~<br>~~|~~|1<br>~~Gs~~<br> ~~ds~~<br>~~Pe~~<br>~~|~~<br>|μA<br>~~Gs~~<br>~~ds~~<br>~~Pe~~<br>~~|E~~<br> <br>~~ee~~|VDS=-16V,VGS= 0V<br>~~Gs~~<br>~~Pe~~<br>~~E~~<br>|
|||–––<br>~~Pe~~<br>~~|~~<br>~~ee~~|–––<br>~~Pe~~<br>~~| |~~<br>~~ee~~|150<br>~~Pe~~<br>~~|~~<br>~~| ~~<br>~~ee~~||VDS= -16V,VGS= 0V,TJ= 125°C<br>~~Pe~~<br>~~E~~<br> ~~ee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~|~~|–––<br>~~|~~<br>~~ee~~<br>~~|tT~~|–––<br>~~| ~~<br>~~ee~~<br>~~tT~~|-100<br>~~|~~<br><br>~~ee~~<br>~~tT~~|nA<br>~~| E~~<br><br>~~ee~~<br><br>~~ds~~|VGS= 12V<br>~~E~~<br><br>~~ee~~<br>~~Po~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~|tT~~<br>~~Gs~~|–––<br>~~ee~~<br>~~tT~~<br>~~rs~~|100<br>~~ee~~<br>~~tT~~<br>~~ds~~||VGS= -12V<br>~~ee~~<br>~~Po~~|
|RG|Internal Gate Resistance<br>~~ee~~<br>~~|~~<br>~~rs~~|–––<br>~~ee~~<br>~~| tT~~<br>~~rs~~<br>~~Gs~~<br>~~rs~~|8.9<br>~~ee~~<br>~~tT~~<br>~~rs~~<br>~~rs~~<br>~~rs~~|–––<br>~~ee~~<br>~~tT ~~<br>~~rs~~<br>~~ds~~<br>~~GO~~|Ω<br>~~ee~~<br> <br>~~rs~~<br>~~ds~~<br>~~GO~~|~~ee~~<br> ~~Po~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~<br>~~es~~|6.5<br>~~rs~~<br>~~Gs~~<br>~~es~~<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~rs ~~<br>~~es~~<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br> ~~ds~~<br>~~es~~<br>~~GO~~|S<br>~~rs~~<br>~~ds~~<br>~~es~~<br>~~GO~~|VDS= -10V,ID=-4.3A<br>~~rs~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~|–––<br>~~rs~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|6.9<br>~~rs~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|–––<br>~~GO~~<br>~~es~~|nC<br>~~GO~~|VDS=-10V<br>VGS= -4.5V<br>ID= -4.3A<br>@<br>@|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~**es**~~|1.0<br> ~~es~~<br>~~es~~<br>~~es~~<br>~~**es**~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~**es**~~|2.9<br>~~es~~<br>~~**es**~~|–––|||
|td(on)|Turn-On DelayTime<br>~~es ~~<br>~~es~~|–––<br>~~es ~~<br> ~~**es**~~<br>~~es~~|7.0<br> ~~es~~<br>~~**es**~~<br>~~es~~|–––|ns|VDD=-10V<br>VGS= -4.5V<br>RG= 6.8Ω<br>ID= -1A<br>@<br>@|
|tr|Rise Time<br> <br>~~es~~<br>~~es~~|–––<br> ~~**es** ~~<br>~~es~~<br>~~es~~<br>~~es~~|12<br> ~~**es**~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|34<br> ~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|25<br> ~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|570<br> ~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= -16V<br>ƒ= 1.0KHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|160<br> ~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|110<br> ~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||



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100 100<br>VGS VGS<br>TOP           -10V TOP           -10V<br>-4.5V -4.5V<br>-3.0V -3.0V<br>-2.5V -2.5V<br>a -2.3V Po -2.3V<br>10 -2.0V-1.8V 10 -2.0V-1.8V<br>BOTTOM -1.5V BOTTOM -1.5V<br>U O yo<br>1 1 -1.5V<br>-1.5V<br>≤ 60μs  PULSE WIDTH    ≤ 60μs  PULSE WIDTH<br>Tj = 25°C<br>0.1 BieHEH pi 0.1 Bienn Tj = 150°C<br>0.1 1 10 100 0.1 1 10 100<br>-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 1.3<br>S e ID = -4.3A<br>ee ee ee VGS = -4.5V VY<br>10<br>TJ = 150°C i Min 1.1 :<br>TJ = 25°C<br>1<br>— — EE (|<br>— ———— HyXO<br>| ff f | Pp<br>VDS = -15V<br>≤ 60μs PULSE WIDTH<br>a<br>0.1 0.9<br>Jf |} LL<br>1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>-VGS, Gate-to-Source Voltage (V)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>-ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 14<br>VGS   = 0V,       f = 1 KHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= -4.3A<br>C  = C 12<br>Crss   = C gd + C VDS= -16V<br>oss   ds  gd 10 VDS= -10V<br>1000<br>Ciss<br>ooo coon 8 ps  SS,A<br>Coss 6<br>Crss<br>100<br>ne :<br>4<br>| a a<br>He 2<br>10 0<br>1 10 100 0 4 8 12 16 20<br>-VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>10<br>100μsec<br>10<br>T = 150°C<br>J<br>1 1msec<br>1 TJ = 25°C<br>0.1<br>TA = 25°C 10msec<br>Tj = 150°C<br>VGS = 0V Single Pulse<br>0.1 0.01<br>0.3 0.5 0.7 0.9 1.1 0 1 10 100<br>-VSD, Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V)<br>-VGS, Gate-to-Source Voltage (V)<br>-ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>-ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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5<br>K f<br>4 h s [—] | tty.Re D.U.T. -<br>+<br>3<br>~~ es<br>≤ 1<br>≤ 0.1 %<br>2 S enNe Duty Factor<br>Fig 10a.   Switching Time Test Circuit<br>1<br>td(on) tr td(off) tf<br>VGS<br>0 Pt tt :| qT 1fo“<br>10%<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C) |<br>\ / \Ve<br>Fig 9.   Maximum Drain Current Vs. 90% X |<br> Ambient Temperature<br>VDS<br>Fig 10b.   Switching Time Waveforms<br>1000<br>100 a<br>D = 0.50<br>=z 0.20 tet| | Lemme | | tT TT TTP<br>10 0.10<br>0.05<br>0.02<br>1 0.01<br>0.1<br>Notes:<br>0.01 SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthja + TA<br>0.001 e eee eee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>-ID,  Drain Current (A)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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120 200<br>ID = -4.3A<br>100 titty 160 EUEE LL<br>Vgs = -2.5V<br>80 ee 120 ee e<br>60 80<br>ME ttt} LYE EL<br>T = 125°C<br>J<br>40 40<br>AN} LE E Vgs = -4.5V<br>T = 25°C<br>J<br>EP<br>20 re OLELELE 0 LL<br>2 4 6 8 10 12 0 5 10 15 20 25 30 35<br>-ID, Drain Current (A)<br>-VGS, Gate -to -Source Voltage  (V)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>Vgs(th) 201 K SS<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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1.5 100<br>80<br>STN<br>1.0<br>A U) a<br>60<br>WON |<br>40<br>0.5 ID = -10uA S SRN. A A<br>ID = -25uA<br>ID = -250uA 20<br>TRDe 0 t O0 a a0<br>0.0<br>1E-005 0.0001 0.001 0.01 0.1 1 10<br>-75 -50 -25 0 25 50 75 100 125 150<br>Time (sec)<br>TJ , Temperature ( °C )<br>Fig 15.   Typical Threshold Voltage Vs. Fig 16. Typical Power Vs. Time<br>Power (W)<br>-VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

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DIMENSIONS<br>6 A 5 MILLIMETERS INCHES<br>A D Po SYMBOL a MIN MAX MIN MAX<br>A ee A 0.89 1.12<br>7 o4 A2 C Poof A1 0.01 0.10 0.0004<br>3 E A2 0.88 1.02<br>6 7S E1 1 2 0.15 [0.006] M C B A Ok a b 0.30 a 0.50<br>0.10 [0.004] C c 0.08 0.20<br>! elHo Wt a A1 4b 3X b otto D 2.80 3.04<br>An 5 B + e i e1 | NOTES: 0.20 [0.008] M C B A ||| E1Ee 0.087 1.202.100.95 || BSC1.402.64 0.0830.047 ||0.1200.1040.055 | |<br>| e1 0.075 1.90 BSC BSC<br>| L 0.40 0.60 BSc<br>H KOR 4 L1 Recommended Footprint ee L1 0.54 | REF 0.016 | 0.024 REF  |<br>L2 0.25 BSC BSC<br>8 ; c 0.972 — +. a 0 8 0 8<br>L2 t 0.802 a 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>“  7 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>L 1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>**----- End of picture text -----**<br>


2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. L 1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. Z 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 

## Micro3 (SOT-23/TO-236AB) Part Marking Information 

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR 

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|||
|---|---|
|DATE CODE|
|PART NUMBER|LEAD FREE|
|Cu WIRE|LOT CODE|
|HALOGEN FREE|
|X =  PART NUMBER CODE REFERENCE:|
|A =  IRLML2402|S =  IRLML6244|
|B =  IRLML2803|T =  IRLML6246|
|C =  IRLML6302|U =  IRLML6344|
|D =  IRLML5103|V =  IRLML6346|
|E =  IRLML6402|W =  IRFML8244|
|F =  IRLML6401|X =  IRLML2244|
|G =  IRLML2502|Y =  IRLML2246|
|H =  IRLML5203|Z =  IRFML9244|
|I  =  IRLML0030|
|J =  IRLML2030|
|K =  IRLML0100|
|L =  IRLML0060|
|M =  IRLML0040|
|N =  IRLML2060|
|P =  IRLML9301|
|R =  IRLML9303|

**----- End of picture text -----**<br>


Note: A line above the work week (as shown here) indicates Lead - Free. 

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|||||
|---|---|---|---|
|WORK|
|YEAR|Y|WEEK|W|
|2001|1|01|A|
|2002|2|02|B|
|2003|3|03|C|
|2004|4|04|D|
|2005|5|
|2006|6|
|2007|7|
|2008|8|
|2009|9|
|2010|0|24|X|
|25|Y|
|26|Z|
|WORK|
|YEAR|Y|WEEK|W|
|2001|A|27|A|
|2002|B|28|B|
|2003|C|29|C|
|2004|D|30|D|
|2005|E|
|2006|F|
|2007|G|
|2008|H|
|2009|J|
|2010|K|50|X|
|51|Y|
|52|Z|

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W =  (27-52) IF PRECEDED BY A LETTER 

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## ™ 

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**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 66 oo 6 64 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>\EIEIERIE IE IE}<br>FEED DIRECTION 4.1 ( .161 )<br>——- 4 4 3.9 ( .154 ) ; 1.1 ( .043 )0.9 ( .036 ) + 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) =<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


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|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML2244TRPbF|Micro3|Tape and Reel|**Quantity**<br>3000||



|**Qualification information**†|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|Micro3|MS L1<br>(per IPC/JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



; Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ttt Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2011 

www.irf.com 

10 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML2244TRPBF/power-mosfet-p-channel-20-v-43-a-0054-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml2244trpbf/mosfet-p-ch-20v-4-3a-sot-23-3/dp/2468051)
---

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