# Power MOSFET, N Channel, 100 V, 1.6 A, 0.22 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1783928RL/)

**URL**: https://novapart.co/products/IRLML0100TRPBF/power-mosfet-n-channel-100-v-16-a-022-ohm-sot-23
**SKU**: IRLML0100TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1090
**Stock**: 1000+
**Lead Time**: 267 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.178ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 1.6A |
| Drain Source On State Resistance | 0.22ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1783928RL/)

PD - 97157 

## IRLML0100TRPbF HEXFET , Power MOSFET 

||**VDS**|**100**|**V**|
|---|---|---|---|
||**VGS Max**|**± 16**|**V**|
|(|**RDS(on) max**<br>(@VGS= 10V)|**220**<br>~~fe~~<br>~~nz~~|**m**<br>~~fe~~<br>~~nz~~|
|(|**RDS(on) max**<br>@VGS= 4.5V)|**235**<br>~~nz~~|**m**<br>~~nz~~|
|**Application(s)**||||



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G 1<br>3 D<br>S 2 Micro3 [TM] (SOT-23)<br>IRLML0100TRPbF<br>**----- End of picture text -----**<br>


## **Application(s)** 

- Load/ System Switch 

## **Features and Benefits** 

**Features** 

## **Benefits** 

|Industry-standardpinout||Multi-vendor compatibility|
|---|---|---|
|Compatible with existingSurface Mount Techniques|results in|Easier manufacturing|
|RoHS compliant containingno lead,no bromide and no halogen|⇒|Environmentallyfriendly|
|MSL1||Increased reliability|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-Source Voltage|100|V|
|ID @TA= 25°C|Continuous Drain Current,VGS @10V|1.6|A|
|ID @TA= 70°C|Continuous Drain Current,VGS @10V|1.3||
|IDM|Pulsed Drain Current|7.0||
|PD @TA= 25°C|Maximum Power Dissipation|1.3|W|
|PD @TA= 70°C|Maximum Power Dissipation|0.8||
||Linear DeratingFactor|0.01|W/°C|
|VGS|Gate-to-Source Voltage|± 16|V|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



_See detailed ordering and shipping information on the last page of this data sheet._ 

Notes through are on page 10 www.irf.com 

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11/24/09 

**Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. **<br>~~rs~~|**Typ. **<br>~~ed~~|**Max. **|**Units**|**Conditions**<br>~~(~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|100<br>~~es~~<br>~~rs~~<br>~~es~~|–––<br>~~es~~<br>~~ed~~<br>~~ed~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V,ID= 250µA<br>~~es~~<br>~~(~~|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~|–––<br>~~rs~~<br>~~rs~~<br>~~es~~<br>~~|~~|0.10<br>~~ed~~<br>~~rs~~<br>~~ed~~<br>~~|~~|–––<br>~~rs~~<br>~~EE~~<br>|V/°C<br>~~rs~~<br>~~EE~~|Reference to 25°C,ID= 1mA<br>~~(~~<br>~~rs~~<br>~~EE~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~PE~~|–––<br>~~es~~<br>~~PE~~<br>~~|~~|190<br>~~ed~~<br>~~PE~~<br>~~|~~|235<br>~~PE~~<br>~~EE~~<br>|mΩ<br>~~PE~~<br>~~EE~~<br>~~QO~~|VGS= 4.5V,ID= 1.3A<br>~~PE~~<br>~~EE~~|
|||–––<br>~~PE~~<br>~~|~~<br>~~rs~~|178<br>~~PE~~<br>~~||~~<br>~~rs~~|220<br>~~PE~~<br>~~EE~~<br>~~|~~<br>||VGS= 10V,ID= 1.6A<br>~~PE~~<br>~~EE~~<br>~~@~~<br>~~QO~~|
|VGS(th)|Gate Threshold Voltage<br>~~PE~~<br>~~es~~|1.0<br>~~PE~~<br>~~|~~<br>~~es~~<br>~~rs~~<br>~~|~~|–––<br>~~PE~~<br>~~| |~~<br>~~es~~<br>~~rs~~<br>~~|~~|2.5<br>~~PE~~<br>~~EE~~<br>~~|~~<br>~~es~~<br><br>~~LEE~~<br>|V<br>~~PE~~<br>~~EE~~<br>~~es~~<br>~~QO~~<br>~~LEE~~|VDS= VGS,ID= 25µA<br>~~PE~~<br>~~EE~~<br>~~@~~<br>~~es~~<br>~~QO~~<br>~~LEE~~|
|IDSS|Drain-to-Source Leakage Current<br>~~es~~<br>~~PF~~|–––<br>~~es~~<br>~~rs~~<br>~~PF~~<br>~~|~~|–––<br>~~es~~<br>~~rs ~~<br>~~PF~~<br>~~|~~|20<br>~~es~~<br> <br>~~PF~~<br>~~LEE~~<br>|µA<br>~~es~~<br> ~~QO~~<br>~~PF~~<br>~~LEE~~|VDS=100V,VGS= 0V<br>~~es~~<br>~~QO~~<br>~~PF~~<br>~~LEE~~|
|||–––<br>~~PF~~<br>~~|~~|–––<br>~~PF~~<br>~~||~~|250<br>~~PF~~<br>~~LEE~~<br>~~|~~||VDS= 100V,VGS= 0V,TJ= 125°C<br>~~PF~~<br>~~LEE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~PF~~<br>~~ee~~<br>~~**|**~~|–––<br>~~PF~~<br>~~|~~<br>~~ee~~<br>~~**|**~~|–––<br>~~PF~~<br>~~||~~<br>~~ee~~|100<br>~~PF~~<br>~~LEE~~<br>~~|~~<br>~~ee~~|nA<br>~~PF~~<br>~~LEE~~<br>~~ee~~|VGS= 16V<br>~~PF~~<br>~~LEE~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~**|**~~<br>~~ns~~|–––<br>~~ee~~<br>~~rd~~|-100<br>~~ee~~||VGS= -16V<br>~~ee~~<br>~~(~~|
|RG|Internal Gate Resistance<br>~~ee~~<br>~~**|**~~<br>~~es~~|–––<br>~~ee~~<br>~~**|**~~<br>~~es~~<br>~~ns~~<br>~~ds~~|1.3<br>~~ee~~<br>~~es~~<br>~~rd~~<br>~~ds~~|–––<br>~~ee~~<br>~~es~~|Ω<br>~~ee~~<br>~~es~~|~~ee~~<br>~~es~~<br>~~(~~|
|gfs|Forward Transconductance<br>~~es~~|5.7<br>~~ns~~<br>~~es~~<br>~~ds~~<br>~~es~~|–––<br>~~rd~~<br>~~es~~<br>~~ds~~<br>~~es~~|–––<br>~~es~~|S<br>~~es~~|VDS= 50V,ID= 1.6A<br>~~(~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ds~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|2.5<br>~~es~~<br>~~ds~~<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~|nC<br>~~es~~|VDS=50V<br>VGS= 4.5V<br>ID= 1.6A<br>~~es~~<br>@<br>@|
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~es~~<br>~~**es**~~|0.5<br> ~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~**es**~~|1.2<br>~~es~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee ~~<br>~~ee~~|–––<br>~~es~~<br> ~~**es**~~<br>~~es~~|2.2<br>~~es~~<br>~~ee~~|–––|ns|VDD=50V<br>VGS= 4.5V<br>RG= 6.8Ω<br>ID= 1.0A<br>@<br>@|
|tr|Rise Time<br> <br>~~ee~~<br>~~ee~~|–––<br> ~~**es** ~~<br>~~ee~~<br>~~es~~<br>~~es~~|2.1<br> ~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|9.0<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|3.6<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|290<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|27<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|13<br>~~ee~~|–––<br>~~ee~~|||



## **Source - Drain Ratings and Characteristics** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|1.1|A<br>~~ds~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)|–––<br>~~rs~~|–––<br>~~rs~~|7.0<br>~~ds~~|||
|VSD|Diode Forward Voltage<br>~~es~~|–––<br>~~es~~<br>~~rs~~|–––<br>~~es~~<br>~~rs~~|1.3<br>~~es~~<br>~~ds~~|V<br>~~es~~<br>~~ds~~|TJ= 25°C,IS= 1.1A,VGS= 0V<br>~~es~~|
|trr|Reverse RecoveryTime<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~rs~~<br>~~ee~~<br>~~ee~~|20<br>~~es~~<br>~~rs ~~|30<br>~~es~~<br> ~~ds~~|ns<br>~~es~~<br>~~ds~~|di/dt = 100A/µs<br>TJ= 25°C, VR= 50V, IF=1.1A<br>~~es~~<br>~~O)~~|
|Qrr|Reverse RecoveryCharge<br>~~es~~|–––<br>~~ee~~|13|20|nC||



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100<br>≤ 60µs  PULSE WIDTH  VGS<br>Tj = 25°C TOP           10.0V4.50V<br>3.50V<br>10 3.30V3.25V<br>2.50V<br>2.35V<br>BOTTOM 2.25V<br>1<br>0.1<br>2.25V<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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10<br>1 T J  = 150°C<br>0.1 T = 25°C<br>J<br>VDS = 50V<br>≤ 60µs PULSE WIDTH<br>0.01<br>1.5 2.0 2.5 3.0 3.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100<br>≤ 60µs  PULSE WIDTH  VGS<br>Tj = 150°C TOP           10.0V4.50V<br>3.50V<br>3.30V<br>3.25V<br>2.50V<br>10 2.35V<br>BOTTOM 2.25V<br>1<br>2.25V<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.5<br>ID = 1.6A<br>V = 10V<br>GS<br>2.0<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## �������������� 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>1000 oss   ds  gd<br>C<br>iss<br>100<br>Coss<br>C<br>rss<br>10<br>1<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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100<br>10<br>TJ = 150°C<br>1<br>0.1<br>T = 25°C<br>J<br>VGS = 0V<br>0.01<br>0.4 0.6 0.8 1.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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16<br>ID= 1.6A<br>VDS= 80V<br>12 VDS= 50V<br>VDS= 20V<br>8<br>4<br>0<br>0 1 2 3 4 5 6 7<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>10<br>100µ sec<br>1<br>1msec<br>0.1<br>TA = 25°C<br>10msec<br>Tj = 150°C<br>Single Pulse<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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2.0<br>��<br>���<br>���<br>������<br>1.5<br>��<br>+<br>- [�] ��<br>1.0 ���<br>������������≤ 1 ��<br>������������≤ 0.1 %<br>0.5 Fig 10a.   Switching Time Test Circuit<br>VDS<br>0.0 90%<br>25 50 75 100 125 150<br>TA , Ambient Temperature (°C)<br>10%<br>Fig 9.   Maximum Drain Current Vs. VGS<br> Ambient Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>1000<br>100<br>D = 0.50<br>0.20<br>10 0.10<br>0.05<br>0.02<br>1 0.01<br>0.1<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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600<br>ID = 1.6A<br>550<br>500<br>450<br>400<br>TJ = 125°C<br>350<br>300<br>250<br>T = 25°C<br>200 J<br>150<br>2 4 6 8 10<br>VGS, Gate -to -Source Voltage  (V)<br>Ω )<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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270<br>250<br>Vgs = 4.5V<br>230<br>Vgs = 10V<br>210<br>190<br>170<br>0 2 4 6 8<br>ID, Drain Current (A)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>0<br>Vgs(th) S<br>201 K<br>Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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**----- Start of picture text -----**<br>
2.5 100<br>80<br>2.0<br>60<br>1.5<br>ID = 25uA 40<br>ID = 250uA<br>1.0<br>20<br>0<br>0.5<br>1E-005 0.0001 0.001 0.01 0.1 1 10<br>-75 -50 -25 0 25 50 75 100 125 150<br>Time (sec)<br>TJ , Temperature ( °C )<br>Power (W)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

**�������** Typical Power Vs. Time 

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DIMENSIONS<br>A 6 A 5 Po MILLIMETERS INCHES<br>D SYMBOL MIN MAX MIN MAX<br>A es 0.89 1.12<br>A<br>7 oA A2 C Poof A1 0.01 0.10 0.0004<br>3 E A2 0.88 1.02<br>A 6 Ha E1 1 2 0.15 [0.006] M C k B A oeOy  E r e. 0.10 [0.004] | C oaForee bc 0.300.08 0.500.20 [0.020a|<br>Ho Wt A1 | 4k ee 3X b ottoee D 2.80 ee 3.04 [a]<br>An 5 B + e i e1 | NOTES: son 0.20 [0.008] M C B A ||| E1Ee 0.087 1.202.100.95 || BSC1.402.64 0.0830.047 ||0.1200.1040.055 | |<br>| e1L 0.075 1.900.40 BSC0.60 BSCBSc<br>H A 4 L1 Recommended Footprint |ee L1 0.54 | REF 0.016 | 0.024 REF  |<br>L2 0.25 BSC BSC<br>8 c 0.972 — + a 0 8 0 8<br>L2 0.802 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>r  7 ene 3. CONTROLLING DIMENSION: MILLIMETER.<br>4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>“ L 1.900 ; 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>**----- End of picture text -----**<br>


1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. ; 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. n 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 

## Micro3 (SOT-23/TO-236AB) Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

W =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR 

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WORK<br>Y =  YEAR YEAR Y WEEK W<br>PART NUMBER W =  WEEK 2001 1 01 A<br>2002 2 02 B<br>2003 3 03 C<br>2004 4 04 D<br>2005 5<br>LOT 2006 6<br>CODE 2007 7<br>2008 8<br>PART NUMBER CODE REFERENCE: 2009 9<br>A =  IRLML2402 2010 0 2524 | | YX<br>B =  IRLML2803 26 Z<br>C =  IRLML6302<br>D =  IRLML5103 W =  (27-52) IF PRECEDED BY A LETTER<br>E =  IRLML6402 WORK<br>F =  IRLML6401 YEAR Y WEEK W<br>G =  IRLML2502 2001 A 27 A<br>H =  IRLML5203 2002 B 28 B<br>I  =  IRLML0030 2003 C 29 C<br>2004 D 30 D<br>J =  IRLML2030<br>2005 E<br>K =  IRLML0100 2006 F<br>L =  IRLML0060 2007 G<br>M =  IRLML0040 2008 H<br>N =  IRLML2060 2009 J<br>2010 K 50 X<br>Note: A line above the work week 51 Y<br>(as shown here) indicates Lead - Free. 52 Z<br>**----- End of picture text -----**<br>


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## ™ 

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**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>60 TR 6666 ¢ 6, 3.55 ( .139 ) | 8.3 ( .326 )<br>3.45 ( .136 ) 7.9 ( .312 )<br>VEITIRIE IIE}<br>FEED DIRECTION 4.1 ( .161 )<br>tt 3.9 ( .154 ) . 1.1 ( .043 )0.9 ( .036 ) tL 0.35 ( .013 )0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>aN 8.40 ( .331 ) S|<br>NOTES:<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>**----- End of picture text -----**<br>


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|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRLML0100TRPbF|Micro3|Tape andReel|3000||



## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|Micro3|MS L1<br>(per IPC/JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



- T Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability 

- to Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ 

- tt Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Surface mounted on 1 in square Cu board 

Refer to application note #AN-994. a 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 11/2009 

www.irf.com 

10 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML0100TRPBF/power-mosfet-n-channel-100-v-16-a-022-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml0100trpbf/mosfet-n-ch-100v-1-6a-sot-23/dp/1783928RL)
---

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