# Power MOSFET, N Channel, 60 V, 2.7 A, 0.092 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1783927/)

**URL**: https://novapart.co/products/IRLML0060TRPBF/power-mosfet-n-channel-60-v-27-a-0092-ohm-sot-23
**SKU**: IRLML0060TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.0900
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2.7A |
| Drain Source On State Resistance | 0.092ohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1783927/)

IRLML0060TRPbF 

## HEXFET[® ] Power MOSFET 

|**VDSS**|**60**|**V**|
|---|---|---|
|**VGS**|±**16**|**V**|
|**RDS(on)max**<br>(@ VGS= 10V)|**92**|**m**|
|**RDS(on)max**<br>(@VGS= 4.5V)|**116**|**m**|



|**RDS(on)max**<br>(@VGS= 4.5V)<br>**116**<br>**m**||||||Micro 3™ (SOT-23)<br>IRLML0060TRPbF|Micro 3™ (SOT-23)<br>IRLML0060TRPbF||
|---|---|---|---|---|---|---|---|---|
|**Applications**<br><br>Load/System Switch|||**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~ee~~<br>~~ee~~||||||
|**Features**||||||**Benefits**|||
|Industry-Standard Pinout<br>Compatible with Existing Surface Mount Techniques<br>RoHS Compliant Containing no Lead, no Bromide and no Halogen<br>MSL1<br>~~——<—~~||||Multi-Vendor Compatibility<br>Compatible with Existing Surface Mount Techniques <br>results in Easier Manufacturing<br><br>Environmentally Friendlier<br>Increased Reliability|||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRLML0060TRPbF<br>Micro 3™(SOT-23)<br>Tape and Reel<br>3000<br>IRLML0060TRPbF<br>~~Bs~~|||||||||
|**Absolute Maximum Ratings **|||||||||
|**Symbol**<br>**Parameter**||||||**Max.**|**Units**||
|VDS<br>Drain-to-Source Voltage||||||60|V||
|ID@ TA= 25°C<br>Continuous Drain Current, VGS@ 10V||@ 10V||||2.7|||
|ID@ TA= 70°C<br>Continuous Drain Current, VGS@  10V||@  10V||||2.1|A||
|IDM<br>Pulsed Drain Current||||||11|||
|PD@TA= 25°C<br>Maximum Power Dissipation|Maximum Power Dissipation|||||1.25|||
|PD@TA= 70°C<br>Maximum Power Dissipation|Maximum Power Dissipation|||||0.80|W||
|Linear Derating Factor||||||0.01|mW/°C||
|VGS<br>Gate-to-Source Voltage||||||± 16|||
|TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range||||||-55  to + 150|°C||



**Thermal Resistance** 

**Symbol Parameter Typ. Max. Units** RJA Junction-to-Ambient  ––– 100 °C/W ~~or~~ RJA Junction-to-Ambient (t < 10s)  ––– 99 

1 2016-12-20 ~~—_————~~ 

~~Cinfineon~~ 

IRLML0060TRPbF ~~LLL~~ 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ns~~|**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ. Max. Units**<br>~~GO~~|**. Max. Units**<br>~~GO~~|**. Max. Units**|**. Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ns~~|Drain-to-Source Breakdown Voltage<br>~~GO~~|60<br>~~GO~~|–––<br>~~GO~~|–––<br>~~GO~~|V|VGS= 0V,ID= 250µA|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~Se~~|Breakdown Voltage Temp. Coefficient<br>~~Se~~|–––<br>~~Se~~|0.06<br>~~Se~~|–––<br>~~Se~~|V/°C Reference to 25°C<br>~~Se~~|V/°C Reference to 25°C,ID= 1mA<br>~~Se~~|
|RDS(on)<br>~~Se~~|Static Drain-to-Source On-Resistance <br>~~Se~~|–––<br>~~Se~~|98<br>~~Se~~|116<br>~~Se~~|m~~~~<br>~~Se~~<br>~~OO~~|VGS= 4.5V,ID= 2.2A<br>~~Se~~|
|||<br>–––<br>~~Se~~|78<br>~~Se~~|92<br>~~Se~~<br>~~OO~~||~~~~<br>VGS= 10V,ID= 2.7A<br>~~Se~~|
|VGS(th)<br>~~Se~~<br>~~OO~~|Gate Threshold Voltage<br>~~Se~~<br>~~OO~~|1.0<br>~~Se~~<br>~~OO~~|–––<br>~~Se~~<br>~~OO~~|2.5<br>~~Se~~<br>~~OO~~<br>~~OO~~|V<br>~~Se~~<br>~~OO~~<br>~~OO~~|VDS= VGS,ID= 25µA<br>~~Se~~<br>~~OO~~|
|IDSS<br>~~OO~~<br>~~ee~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~OO~~<br>~~ee~~<br>~~errr~~|–––<br>~~OO~~<br>~~ee~~|–––<br>~~OO~~<br>~~ee~~|20<br>~~OO~~<br>~~OO~~<br>~~ee~~|µA<br>~~OO~~<br>~~OO~~<br>~~ee~~<br>~~ee~~|VDS= 60V,VGS= 0V<br>~~OO~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~||VDS= 60V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>|
|IGSS <br>~~a~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~errr~~<br>|–––<br>~~ee~~<br>|–––<br>~~ee~~<br>|100<br>~~ee~~<br>|nA <br>~~eeee~~<br>|VGS= 16V<br>~~ee~~<br>|
||Gate-to-Source Reverse Leakage<br>~~errr~~<br>|–––<br>~~ee~~<br>|–––  -100<br>~~ee~~<br>|–––  -100<br>~~ee~~<br>||VGS= -16V<br>~~ee~~<br>|
|RG<br>~~a ~~<br>~~esQO~~|Internal Gate Resistance<br> ~~errr~~<br>~~QO~~|–––<br>~~ee ~~<br>~~QO~~|1.6<br> ~~ee ~~<br>~~QO~~|–––<br> ~~ee~~<br>~~QO~~|<br>~~eeee~~<br>~~QO~~|~~ee~~<br>~~QO~~|
|gfs<br>~~es~~<br>~~GO~~|Forward Trans conductance<br><br>~~GO~~|7.6<br><br><br>~~GO~~|–––<br><br><br>~~GO~~|–––<br><br><br>~~GO~~|S<br>~~ee~~<br><br>~~GO~~|VDS= 25V, ID= 2.7A<br>~~ee~~<br><br>~~GO~~|
|Qg<br>~~——~~|Total Gate Charge<br>~~——~~|–––<br>~~——~~|2.5<br>~~——~~|–––<br>~~——~~|nC<br>~~———~~|ID= 2.7A<br>VDS= 30V<br>VGS= 4.5V<br>~~—~~<br>~~—_~~|
|Qgs<br>~~——~~|Gate-to-Source Charge<br>~~——~~|–––<br>~~——~~|0.7<br>~~——~~|–––<br>~~——~~|||
|Qgd<br>~~——~~<br>~~——<——~~|Gate-to-Drain(‘Miller’)Charge<br>~~——~~<br>~~——<——~~|–––<br>~~——~~<br>~~——<——~~|1.3<br>~~——~~<br>~~——<——~~|–––<br>~~——~~<br>~~——<——~~|||
|td(on)<br>~~——~~<br>~~——<——~~<br>~~=~~|Turn-On Delay Time<br>~~——~~<br>~~——<——~~<br>~~=~~|–––<br>~~——~~<br>~~——<——~~<br>~~=~~|5.4<br>~~——~~<br>~~——<——~~<br>~~=~~|–––<br>~~——~~<br>~~——<——~~<br>~~=~~|ns<br>~~———~~<br>~~=~~|VDD= 30V<br>ID= 1.0A<br>RG= 6.8<br>VGS= 4.5V<br>~~—~~<br>~~=~~<br>~~—_~~|
|d(on)<br>tr<br>~~——<——~~<br>~~=~~|Rise Time<br>~~——<——~~<br>~~=~~|–––<br>~~——<——~~<br>~~=~~|6.3<br>~~——<——~~<br>~~=~~|–––<br>~~——<——~~<br>~~=~~|||
|td(off)<br>~~=~~|Turn-Off DelayTime<br>~~=~~|–––<br>~~=~~|6.8<br>~~=~~|–––<br>~~=~~|||
|tf<br>~~=~~|Fall Time<br>~~=~~|–––<br>~~=~~|4.2<br>~~=~~|–––<br>~~=~~|||
|Ciss<br>~~—————~~|Input Capacitance<br>~~—————~~|–––<br>~~—————~~|290<br>~~—————~~|–––<br>~~—————~~|pF<br>~~—————~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~—_~~<br>~~—————~~|
|Coss<br>~~—————~~<br>~~ee~~|Output Capacitance<br>~~—————~~|–––<br>~~—————~~|37<br>~~—————~~|–––<br>~~—————~~|||
|Crss<br>~~—————~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~—————~~|–––<br>~~—————~~|21<br>~~—————~~|–––<br>~~—————~~|||



**Notes:** 

>  Repetitive rating;  pulse width limited by max. junction temperature. 

>  Pulse width 400µs; duty cycle  2%. 

> Surface mounted on 1 in square Cu board 

> Refer to application note #AN-994. 

2 

2016-12-20 

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**==> picture [238 x 606] intentionally omitted <==**

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100<br>60µs PULSE WIDTH TOP           VGS10V<br>Tj = 25°C 6.0V<br>4.5V<br>4.0V<br>10 3.5V<br>3.3V<br>3.0V<br>BOTTOM 2.8V<br>1<br>0.1<br>2.8V<br>—|<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics<br>100<br>10<br>ai<br>T = 150°C<br>1 J  TJ = 25 ° C<br>V = 25V<br>DS<br>60µs PULSE WIDTH<br>0.1 CL<br>2 3 4 5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

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100<br>VGS<br>TOP           10V 60µs PULSE WIDTH<br>6.0V Tj = 150°C<br>4.5V<br>4.0V<br>3.5V<br>3.3V<br>10 3.0V<br>BOTTOM 2.8V<br>1<br>2.8V<br>f=<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

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2.0<br>I = 2.7A<br>D<br>V = 10V<br>GS<br>1.5<br>1.0<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig. 4** Normalized On-Resistance 

vs. Temperature 

3 2016-12-20 ~~Co~~ 

~~Cinfin eon~~ 

IRLML0060TRPbF ~~LLL~~ 

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**----- Start of picture text -----**<br>
10000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>I = 2.7A<br>Ciss    = C gs + Cgd,  C ds SHORTED D<br>C  = C 12.0<br>rss   gd  V = 48V<br>DS<br>C = C + C<br>oss   ds  gd V = 30V<br>10.0 DS<br>1000 eoa ee ell Eee VDS | = 12V . LA<br>8.0<br>C<br>iss<br>C 6.0<br>oss<br>iimmarviips ofb+<br>100<br>C<br>rss 4.0<br>2.0<br>URS) AfPCC<br>10 Miia? = 0.0 ARERR<br>0.1 1 10 100 0 1 2 3 4 5 6 7<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>10<br>10 100µsec<br>1msec<br>1<br>T = 150°C 10msec<br>J<br>T = 25°C<br>J<br>1<br>0.1<br>T  = 25°C<br>A<br>Tj = 150°C<br>V = 0V<br>GS  Single Pulse<br>0.1 0.01<br>Ann ann<br>0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode **Fig 8.** Maximum Safe Operating Area Forward Voltage 4 2016-12-20 ~~=~~ 

~~Cinfineon~~ 

IRLML0060TRPbF ~~[~~ 

**==> picture [240 x 229] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0<br>2.5<br>2.0<br>1.5 P| | i XK \<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
1000<br>100<br>D = 0.50 ry<br>0.20<br>_ HG i,<br>10 0.10<br>Oo TC III<br>+ _| 0.020.05 Tn<br>1 — 0.01 oo AT<br>i oe<br>0.1 Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + TA<br>Pall<br>0.01<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

2016-12-20 

5 

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**----- Start of picture text -----**<br>
400<br>I = 2.7A<br>D<br>300<br>200<br>T = 125°C<br>J<br>100<br>T = 25°C<br>J<br>0<br>3 4 5 6 7 8 9 10<br>VGS, Gate -to -Source Voltage  (V)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 14a.** Basic Gate Charge Waveform 

**==> picture [235 x 230] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>Vgs = 4.5V<br>125<br>100<br>Vgs = 10V<br>75<br>50<br>0 2 4 6 8 10 12<br>ID, Drain Current (A)<br>)<br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance Vs. Drain Current 

**Fig 14b.** Gate Charge Test Circuit 

6 

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IRLML0060TRPbF<br>CT<br>2.8 100<br>2.6<br>ttt tt 80 LAA<br>2.4 CRECEEEE a<br>ID = 250µA<br>2.2<br>60<br>PANPSR E- E a|<br>2.0<br>1.8<br>ID = 25µA 40<br>1.6 AEP SE a<br>1.4 CCEECEPES a<br>20<br>CEEEEEEPK a<br>1.2<br>1.0 CEE 0 NATL r<br>-75 -50 -25 0 25 50 75 100 125 150 1 10 100 1000 10000 100000<br>TJ , Temperature ( °C ) Time (sec)<br>VGS(th), Gate threshold Voltage (V)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

**Fig 16.** Typical Power Vs. Time 

2016-12-20 

7 

## IRLML0060TRPbF ~~—————fine Ll~~ **Micro3™ (SOT-23) Package Outline** (Dimensions are shown in millimeters (inches)) 

**==> picture [484 x 318] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>6 > A 5<br>D SYMBOL MILLIMETERS INCHES<br>MIN MAX MIN MAX<br>ry A 0.89 1.12 0.035 0.044<br>| 3 E A A1 0.01 0.10 0.0004 0.004<br>6 E1 0.15 [0.006] M C B A A2 C A2 0.88 1.02 0.035 0.040<br>! 1 2<br>v ii b 0.30 0.50 0.012 0.020<br>! yt ! A<br>1 ry c 0.08 0.20 0.003 0.008<br>5 B e 0.10 [0.004] C D 2.80 3.04 0.110 0.120<br>e1 A1<br>3X b E 2.10 2.64 0.083 0.104<br>0.20 [0.008] M C B A<br>NOTES: E1 1.20 1.40 0.047 0.055<br>e 0.95 BSC 0.037 BSC<br>e1 1.90 BSC 0.075 BSC<br>L 0.40 0.60 0.016 0.024<br>L1 0.54 REF 0.021 REF<br>L2 0.25 BSC 0.010 BSC<br>H 4 L1 0 8 0 8<br>Recommended Footprint<br>!A 1 ! c 0.972 i i NOTES:<br>\ | | j 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>L2 0.950 2.742 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>0.802 3. CONTROLLING DIMENSION: MILLIMETER.<br>3X L 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br> 7 ! 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>1.900 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>**----- End of picture text -----**<br>


6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 

## **Micro3™ (SOT-23/TO-236AB) Part Marking Information** 

## Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

8 

2016-12-20 

IRLML0060TRPbF ~~LLL~~ 

## ~~Cinfineon~~ 

**Micro3™ Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [474 x 358] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 )<br>1.32 ( .051 )<br>1.95 ( .077 ) 1.5 ( .060 )<br>1.85 ( .072 ) 1.12 ( .045 )<br>4.1 ( .161 )<br>1.65 ( .065 )<br>3.9 ( .154 )<br>TR 3.55 ( .139 )<br>8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 )<br>8.40 ( .331 )<br>**----- End of picture text -----**<br>


NOTES: 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

9 

2016-12-20 

## IRLML0060TRPbF ~~Cinfineon LLL~~ **Qualification Information** Consumer **Qualification Level** (per JEDEC JESD47F)[† ] MSL1 **Moisture Sensitivity Level** Micro3™ (SOT-23) (per JEDEC J-STD-020D)[† ] **RoHS Compliant** Yes ~~_——~~ † Applicable version of JEDEC standard at the time of product release. **Revision History** 

|**Date**|**Comments**|
|---|---|
|12/20/16|<br>Changed datasheet with Infineon logo - all pages.<br><br>Removed typo “Industrial”  on Feature and Benefits Table on page1.<br><br>Corrected typo for Igss test condition from “VGS= 20V” to “VGS= 16V” onpage 2.|



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With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com 

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The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

10 

2016-12-20 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML0060TRPBF/power-mosfet-n-channel-60-v-27-a-0092-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml0060trpbf/mosfet-n-ch-60v-2-7a-sot-23/dp/1783927)
---

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