# Power MOSFET, N Channel, 30 V, 5.3 A, 0.027 ohm, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1791366RL/)

**URL**: https://novapart.co/products/IRLML0030TRPBF/power-mosfet-n-channel-30-v-53-a-0027-ohm-sot-23
**SKU**: IRLML0030TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1060
**Stock**: 1000+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1.3W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-23 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.3A |
| Drain Source On State Resistance | 0.027ohm |
| Gate Source Threshold Voltage Max | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1791366RL/)

PD - 96278B 

## IRLML0030TRPbF 

## HEXFET Power MOSFET 

||**VDS**|**30**|**V**|
|---|---|---|---|
||**VGS Max**|**± 20**|**V**|
|(|**RDS(on) max**<br>(@VGS= 10V)|**27**|**m**Ω|
|(<br>(|(GS)<br>**RDS(on) max**<br>(@VGS= 4.5V)|**40**|**m**Ω|
|**Application(s)**||||



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G 1<br>3 D<br>S 2 Micro3 [TM] (SOT-23)<br>IRLML0030TRPbF<br>**----- End of picture text -----**<br>


## **Application(s)** 

- Load/ System Switch 

## **Features and Benefits** 

## **Features** 

## **Benefits** 

|**Features**|**Benefits**|**Benefits**|
|---|---|---|
|Low RDS(on) ( ≤27mΩ)||Lower switchinglosses|
|Industry-standardpinout||Multi-vendor compatibility|
|Compatible with existing Surface Mount Techniques|results in|Easier manufacturing|
|RoHS compliant containingno lead,no bromide and no halogen|⇒|Environmentallyfriendly|
|MSL1,Industrialqualification||Increased reliability|



## **Absolute Maximum Ratings** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-Source Voltage|30|V|
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 10V|5.3|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 10V|4.3||
|IDM|Pulsed Drain Current|21||
|PD@TA= 25°C|Maximum Power Dissipation|1.3|W|
|PD@TA= 70°C|Maximum Power Dissipation|0.8||
||Linear DeratingFactor|0.01|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ,TSTG|Junction and Storage Temperature Range|-55  to + 150|°C|



Notes through are on page 10 www.irf.com 

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02/29/12 

## **Electric Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min. **<br>~~es~~|**Typ. **|**Max. **<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|30<br>~~es~~<br>~~es~~<br>~~Ps~~|–––<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>~~GO~~<br>~~GO~~|V<br>~~es~~<br>~~GO~~|VGS= 0V, ID= 250μA<br>~~es~~<br>~~QO~~|
|ΔV(BR)DSS/ΔTJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ps~~|0.02<br>~~es~~<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>~~GO~~<br>~~es~~<br>~~GO~~|V/°C<br>~~es~~<br>~~GO ~~<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~<br> ~~QO~~<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~EE~~|–––<br>~~Ps ~~<br>~~EE~~<br>~~|~~|33<br> ~~GO~~<br>~~EE~~<br>~~|~~|40<br>~~GO~~<br>~~EE~~|mΩ<br>~~EE~~<br>~~DO~~|VGS= 4.5V,ID= 4.2A<br>~~EE~~|
|||–––<br>~~EE~~<br>~~|~~<br>~~Us~~|22<br>~~EE~~<br>~~|~~<br>~~I~~|27<br>~~EE~~<br>~~DO~~||VGS= 10V, ID= 5.2A<br>~~EE~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~|1.3<br>~~|~~<br>~~es~~<br>~~Us~~<br>~~ee~~|1.7<br>~~|~~<br>~~es~~<br>~~I~~<br>~~eee~~|2.3<br>~~es~~<br>~~DO~~<br>~~eee~~|V<br>~~es~~<br>~~DO~~<br>~~eee~~|VDS= VGS, ID= 25μA<br>~~es~~<br>~~eee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~ee~~|–––<br>~~Us ~~<br>~~ee~~<br>~~ee~~<br>~~|~~|–––<br> ~~I~~<br>~~ee~~<br>~~eee~~<br>~~|~~|1<br>~~DO~~<br>~~ee~~<br>~~eee~~|μA<br>~~DO~~<br>~~ee~~<br>~~eee~~|VDS=24V, VGS= 0V<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~<br>~~|~~<br>~~ee~~|150<br>~~ee~~<br>~~eee~~<br>~~ee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee ~~<br>~~|~~<br>~~ee~~|–––<br> ~~eee~~<br>~~|~~<br>~~ee~~|100<br>~~eee~~<br>~~ee~~|nA<br>~~eee ~~<br>~~QO~~|VGS= 20V<br> ~~eee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~rs~~|–––<br>~~ee~~|-100<br>~~ee~~<br>~~QO~~||VGS= -20V<br>~~ee~~<br>~~Po~~<br>~~QO~~|
|RG|Internal Gate Resistance<br>~~ee~~<br>~~a~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~rs~~<br>~~rs~~|2.3<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~QO~~<br>~~QO~~|Ω<br>~~es~~<br>~~QO~~<br>~~QO~~|~~ee~~<br>~~Po~~<br>~~es~~<br>~~QO~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~es~~<br>~~es~~|9.5<br>~~es~~<br>~~rs~~<br>~~es~~<br>~~rs~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~QO~~<br>~~es~~<br>~~QO~~|S<br>~~es~~<br>~~QO ~~<br>~~es~~<br>~~QO~~|VDS= 10V, ID= 5.2A<br>~~es~~<br> ~~QO~~<br>~~es~~<br>~~QO~~|
|Qg|Total Gate Charge<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~rs~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|2.6<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~QO~~<br>~~es~~|nC<br>~~es~~<br>~~QO ~~|VDS=15V<br>VGS= 4.5V<br>ID= 5.2A<br>~~es~~<br> ~~QO~~<br>@<br>@|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~**es**~~|0.8<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~**es**~~|1.1|–––|||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~**es**~~<br>~~es~~|5.2|–––|ns|VDD=15V<br>VGS= 4.5V<br>RG= 6.8Ω<br>ID= 1.0A<br>@<br>@|
|tr|Rise Time<br><br>~~es~~<br>~~es~~|–––<br>~~**es**~~<br>~~es~~<br>~~es~~<br>~~es~~|4.4<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|7.4<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~|4.4<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|382<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~<br>~~es~~|84<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es ~~<br>~~es~~<br>~~es~~|39<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|||



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100 100<br>VGS VGS<br>TOP           10.0V TOP           10.0V<br>8.00V 8.00V<br>4.50V 4.50V<br>10 3.50V 3.50V<br>| 3.25V | ooo 3.25V |<br>3.00V 3.00V<br>(iA aa a6 eee ee BOTTOM 2.50V2.25V I] 10 ee 4 BOTTOM 2.50V2.25V H<br>Zetia | | £4<br>1 I Ef | J eee<br>Weeeeeeeee e e e e l 1 anil<br>0.1 2.25V<br>2.25V<br>≤ 60μs PULSE WIDTH<br>≤ 60μs  PULSE WIDTH Tj = 25°C Tj = 150°C<br>0.01 PTSmelt iaeeatiliieemaniil| 0.1 lllSia eeellni<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.0<br>V ≤ 60μs PULSE WIDTHDS = 15V hi hi IVD  GS  = 5.2A= 10V<br>10 fea SS- 1.5 LLL<br>pF A<br>TJ = 150°C TJ = 25°C<br>1 ny 4) Ae 1.0 BeeeP2deeee<br>pf | Lb<br>Ee Ae 2 ee ee eee |<br>0.1 |PATAft| | 0.5 PLLELL EEL<br>1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 14.0<br>VGS   = 0V,       f = 1 MHZ ID= 5.2A<br>Ciss   = C gs + Cgd,  C ds SHORTED 12.0<br>C rss    = C gd  VDS= 24V<br>FUTUR= Coss   = Cds + Cgd 10.0 Ry V DS = 15V Re eA<br>1000<br>Sere = 7<br>8.0<br>Ciss<br>6.0<br>100 C oss<br>ee 4.0 P|.if| |<br>Crss<br>2.0<br>10 re Cen Gs 0.0 EE<br>1 10 100 0 1 2 3 4 5 6 7<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>10 100μsec<br>10<br>1<br>1msecmsecsec<br>T J  = 150°C TJ = 25°C<br>1 10msecsecec<br>0.1<br>TA = 25°CA = 25°C = 25°C°CC<br>Tj = 150°C<br>V GS  = 0V Single Pulse<br>a tH<br>0.1 0.01<br>0.3 0.5 0.7 0.9 1.1 0.1 1 10<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>10 100μsec<br>1<br>1msecmsecsec<br>10msecsecec<br>0.1<br>TA = 25°CA = 25°C = 25°C°CC<br>Tj = 150°C<br>Single Pulse<br>tH<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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6<br>5 »—Ci;YY | ff Ves vos D.U.T.Rp<br>+<br>4 |DN NY R e. - Vop<br>3 INL ie ≤ 1<br>≤ 0.1 %<br>PN Pulse Width ys<br>2<br>Fig 10a.   Switching Time Test Circuit<br>TIN |<br>1<br>VDS<br>90%<br>0<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>| | | fl 10% A \<br>Fig 9.   Maximum Drain Current Vs. VGS | | \<br> Ambient Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br>1000<br>100 Sa<br>D = 0.50<br>0.20<br>10<br>0.10<br>0.05<br>0.02<br>1 0.01<br>0.1<br>Notes:<br>0.01 SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthja + TA<br>0.001 EeTRell TTin |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Effective Transient Thermal Impedance, Junction-to-Ambient 

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140<br>130 | i| ID = 5.2A<br>a<br>120<br>110 |a eeyt<br>100<br>90 a a ee<br>80 ee ee ee eee<br>70 a ee ee ee<br>60 enNe<br>Ne TJ = 125°C ee eee<br>50 eee<br>i<br>40 ee eee<br>30 TJ = 25°C +<br>20<br>2 4 6 8 10<br>VGS, Gate -to -Source Voltage  (V)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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50<br>45<br>40<br>Vgs = 4.5V<br>35<br>30<br>Vgs = 10V<br>25<br>20<br>0 10 20 30 40 50<br>ID, Drain Current (A)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance Vs. Gate Voltage 

**Fig 13.** Typical On-Resistance Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>QG 12V .2 μ F 50K Ω<br>fo ml ais .3 μ F<br>QGS QGD D.U.T. +-VDS<br>i<br>VG VGS<br>3mA<br>o t<br>Charge = IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 14a.** Basic Gate Charge Waveform 

**Fig 14b.** Gate Charge Test Circuit 

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100<br>2.5<br>TTT TT 80 En<br>2.0<br>60<br>1.5<br>TPSBSSHO ANTI<br>1.0 I D  = 25uA 40<br>ID = 250uA 20 WN<br>0.5<br>0<br>TTT] UIA<br>0.0 1E-005 0.0001 0.001 0.01 0.1 1 10<br>-75 -50 -25 0 25 50 75 100 125 150<br>Time (sec)<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Threshold Voltage Vs. Junction Temperature 

Typical Power Vs. Time 

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DIMENSIONS<br>6 A 5 MILLIMETERS INCHES<br>AP D Po SYMBOL a MIN MAX MIN MAX<br>A 0.89 1.12<br>A<br>7 A2 C Poof A1 0.01 0.10 0.0004<br>3 E A2 0.88 1.02<br>6 os E1 1 2 0.15 [0.006] M C B A a I -ee b 0.30 as 0.50<br>0.10 [0.004] C c 0.08 0.20<br>TH o T | A1 | 4h | | 3X la b |otto D 2.80 | 3.04 0.003 | 0.008 |<br>An 5 B O+ e a4 e1 | NOTES: @ —__oun 0.20 [0.008] M C B A ||| E1Ee 0.087 1.202.100.95 || BSC1.402.64 0.0830.047 ||0.1200.1040.055 ||<br>| e1L 0.075 1.900.40 BSC0.60 BSCBSC<br>H A 4 L1 Recommended Footprint |ee L1 0.54 | REF 0.016 | 0.024 REF |<br>6a c 0.972 —+ L2 0.250 BSC8 0 BSC8<br>—L L2 0.802 tie 0.950 2.742<br>3X L 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994<br>2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].<br>A  7 Hat A 3. CONTROLLING DIMENSION: MILLIMETER.4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.<br>L 1.900 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.<br>; 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES<br>  NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS<br>  OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.<br>A 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.<br>8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.<br>**----- End of picture text -----**<br>


## Micro3 (SOT-23/TO-236AB) Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

## DATE CODE MARKING INSTRUCTIONS 

||DATE CODE||||||
|---|---|---|---|---|---|---|
||PART NUMBER||~~|~~<br>~~X~~YWL~~C~~|||LEAD FREE|
||Cu WIRE<br>HALOGEN FREE|||LOT CODE||LOT CODE|
|X =  PART NUMBER CODE REFERENCE:|X =  PART NUMBER CODE REFERENCE:|||X =  PART NUMBER CODE REFERENCE:|||
||A =  IRLML2402||S =  IRLML6244||||
||B =  IRLML2803||T =  IRLML6246|T =  IRLML6246|||
||C =  IRLML6302||U =  IRLML6344||||
||D =  IRLML5103||V =  IRLML6346||||
||E =  IRLML6402||W =  IRFML8244||||
||F =  IRLML6401||X =  IRLML2244||||
||H =  IRLML5203<br>G =  IRLML2502||Z =  IRFML9244<br>Y =  IRLML2246||||
||I  =  IRLML0030||||||
||J =  IRLML2030||||||
||K =  IRLML0100||||||
||L =  IRLML0060||||||
||M =  IRLML0040||||||
||N =  IRLML2060||||||
||P =  IRLML9301||||||
||R =  IRLML9303||||||



Note: A line above the work week (as shown here) indicates Lead - Free. 

|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|WW =  (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR|
|---|---|---|---|---|---|---|---|
||2001<br>1<br>01<br>A<br>YEAR<br>Y<br>W<br>WEEK<br>WORK<br>2011<br>~~————~~|||||||
||2012|2002|2|02||B||
||2013|2003|3|03||C||
||2014|2004|4|04||D||
||2015|2005|5|||||
||2016|2006|6|||||
||2017|2007|7|||||
||2018|2008|8|||||
||2019|2009|9|||||
||2020|2010|0|24||X||
|||||25||Y||
|||||26||Z||
||WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|WW =  (27-52) IF PRECEDED BY A LETTER|||||
|||||WORK||||
||YEAR||Y|WEEK||W||
||2011|2001|A|27||A||
||2012|2002|B|28||B||
||2013|2003|C|29||C||
||2014|2004|D|30||D||
||2015|2005|E|||||
||2016|2006|F|||||
||2017|2007|G|||||
||2018|2008|H|||||
||2019|2009|J|||||
||2020|2010|K|50||X||
|||||51||Y||
|||||52||Z||



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## ™ 

**==> picture [384 x 298] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.05 ( .080 ) 1.6 ( .062 ) 1.32 ( .051 )<br>1.95 ( .077 ) 4.1 ( .161 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.12 ( .045 )<br>3.9 ( .154 ) 1.65 ( .065 )<br>- = Z :<br>oo TR f/oee68 6644 3.55 ( .139 ) © 8.3 ( .326 )<br>3.45 ( .136 )<br>7.9 ( .312 )<br>\EIEIEIAIEIEIe }—<br>FEED DIRECTION 4.1 ( .161 )<br>3.9 ( .154 ) 1.1 ( .043 ) 0.35 ( .013 )<br>0.9 ( .036 ) 0.25 ( .010 )<br>  178.00<br>( 7.008 )<br>    MAX.<br>9.90 ( .390 ) =|<br>8.40 ( .331 )<br>**----- End of picture text -----**<br>


NOTES: 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

www.irf.com 

9 

|**Qualification information**†|**Qualification information**†|**Qualification information**†|
|---|---|---|
|Qualification level|Cons umer††<br>(per JE DE C JES D47F †††guidelines  )||
|Moisture Sensitivity Level|Micro3 (SOT-23)|MS L1<br>(per IPC/JE DE C J-S TD-020D†††)|
|RoHS compliant|Yes||



. Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Ho Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ theo Applicable version of JEDEC standard at the time of product release. 

Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2012 

www.irf.com 

10 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLML0030TRPBF/power-mosfet-n-channel-30-v-53-a-0027-ohm-sot-23)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlml0030trpbf/mosfet-n-ch-30v-5-3a-sot23-3/dp/1791366RL)
---

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