# Power MOSFET, N Channel, 30 V, 4.6 A, 0.031 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2468050/)

**URL**: https://novapart.co/products/IRLL3303TRPBF/power-mosfet-n-channel-30-v-46-a-0031-ohm-sot-223
**SKU**: IRLL3303TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3640
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.031ohm |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 4.6A |
| Drain Source On State Resistance | 0.031ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468050/)

PD- 95223 

## IRLL3303PbF 

- Surface Mount Dynamic dv/dt Rating Logic-Level Gate Drive Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance Lead-Free 

## **Description** 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 30V<br>R  = 0.031 Ω<br>DS(on)<br>G<br>ID = 4.6A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application. 

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SO T -223<br>**----- End of picture text -----**<br>


**Absolute Maximum Ratings** SS **Parameter Max. Units** ~~Cf~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 6.5 ~~oF~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 4.6 A a ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.7 IDM Pulsed Drain Current 37 ~~——_——_—_——————-——~~ PD @TA = 25°C ~~a~~ Power Dissipation  (PCB Mount)** 2.1 ~~-—oe~~ W PD @TA = 25°C Power Dissipation  (PCB Mount)* 1.0 W ~~ph~~ Linear Derating Factor  (PCB Mount)* 8.3 mW/°C ~~o>~~ VGS Gate-to-Source Voltage ± 16 V ~~a~~ EAS Single Pulse Avalanche Energy 140 mJ ~~a~~ IAR Avalanche Current 4.6 A ~~a~~ EAR Repetitive Avalanche Energy 0.10 mJ dv/dt Peak Diode Recovery dv/dt 1.3 V/ns ~~oO po-—~~ TJ, TSTG Junction and Storage Temperature Range -55  to + 150 °C **Thermal Resistance Parameter Typ. Max. Units** R θ JA Junction-to-Amb. (PCB Mount, steady state)* 93 120 °C/W R θ JA Junction-to-Amb. (PCB Mount, steady state)** 48 60 

- When mounted on FR-4 board using minimum recommended footprint. 

- ** When mounted on 1 inch square copper board, for comparison with other SMD devices. 

www.irf.com 

1 

04/27/04 

## IRLL3303PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~rs~~<br>~~a~~|**Parameter**<br>~~ed~~<br>~~se~~|**Min.**<br>~~ed~~<br>~~se~~|**Typ. **<br>~~ed~~<br>~~es~~<br>~~Gs~~|**Max.**<br>~~ed~~<br>~~es~~<br>~~es~~|**Units**<br>~~ed~~<br>~~es~~|**Conditions**<br>~~ed~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~rs~~<br>~~a~~|Drain-to-Source Breakdown Voltage<br>~~ed~~<br>~~se~~|30<br>~~ed~~<br>~~se~~|–––<br>~~ed~~<br>~~es~~<br>~~Gs~~|–––<br>~~ed~~<br>~~es~~<br>~~es~~|V<br>~~ed~~<br>~~es~~|VGS= 0V, ID= 250µA<br>~~ed~~|
|∆V(BR)DSS/∆TJ<br>~~BE~~|Breakdown Voltage Temp. Coefficient<br>~~se~~<br>~~BE~~<br>||–––<br>~~se~~<br>~~BE~~<br>||0.034<br>~~Gs ~~<br>~~BE~~<br>|–––<br> ~~es~~<br>~~BE~~|V/°C<br>~~es~~<br>~~BE~~|Reference to 25°C, ID= 1mA<br>~~BE~~<br>~~—,~~|
|RDS(on)<br>~~|~~|Static Drain-to-Source On-Resistance<br>~~|~~<br>||–––<br>~~|~~<br>||––– <br>~~|~~<br>|0.031<br>~~|~~|Ω<br>~~|~~|VGS= 10V, ID= 4.6A<br>~~|~~<br>~~—,~~|
|||–––<br>~~|~~<br>|~~|~~|––– <br>~~|~~<br>~~|~~|0.045<br>~~|~~||VGS= 4.5V, ID= 2.3A<br>~~|~~<br>~~—,~~|
|VGS(th)<br>a<br>~~es~~|Gate Threshold Voltage<br>|<br>ss<br>~~ss~~|1.0<br>|<br>ss<br>~~ss~~|–––<br><br>OG<br>~~ss~~|–––<br>OG<br>~~ss~~|V<br>OG|VDS= VGS, ID= 250µA<br>~~—,~~|
|gfs<br>~~es~~<br>~~a~~|Forward Transconductance<br>~~ss~~<br>~~ee~~|5.5<br>~~ss~~<br>~~ee~~|–––<br>~~ss~~<br>~~ee~~|–––<br>~~ss~~<br>~~ee~~|S<br>|VDS= 10V, ID= 2.3A<br>~~eee~~|
|IDSS<br>~~es~~<br>~~a~~|Drain-to-Source Leakage Current<br>~~ss~~<br>~~ee~~<br>~~|~~|–––<br>~~ss ~~<br>~~ee~~<br>~~||~~|–––<br> ~~ss~~<br>~~ee~~<br>~~|~~|25<br>~~ss~~<br>~~ee~~|µA<br><br>~~Pe~~|VDS= 30V, VGS= 0V<br>~~eee~~<br>~~Pe~~|
|||–––<br>~~ee~~<br>~~||~~|–––<br>~~ee~~<br>~~|~~|250<br>~~ee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~eee~~<br>~~Pe~~|
|IGSS<br>~~a~~<br>~~ee~~<br>~~Sn~~|Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~Sn~~|–––<br>~~ee~~<br>~~| |~~<br>~~ee~~<br>~~||~~|–––<br>~~ee~~<br>~~|~~<br>~~ee~~|-100<br>~~ee ~~<br>~~ee~~|nA<br> <br>~~Pe~~<br>~~ee~~<br>~~PO~~|VGS= -16V<br> ~~eee~~<br>~~Pe~~<br>~~ee~~<br>~~PO~~|
|||–––<br>~~ee~~<br>~~||~~|–––<br>~~ee~~|100<br>~~ee~~||VGS= 16V<br>~~ee~~<br>~~PO~~|
|Qg<br>~~Sn~~<br>~~ee~~|Total Gate Charge<br>~~|~~<br>~~Sn~~|–––<br>~~||~~<br>~~ee~~|34|50|nC<br>~~PO~~|ID= 4.6A<br>VDS= 24V<br>VGS= 10V, See Fig. 6 and 9<br>~~PO~~<br>~~@~~|
|Qgs<br>a<br>~~ee~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|4.4<br>~~es~~|6.5|||
|Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge|–––<br>~~ee~~|10|16|||
|td(on)<br>~~ee~~<br>~~a~~<br>ee|Turn-On Delay Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|7.2<br>~~ee~~|–––|ns|VDD= 15V<br>ID= 4.6A<br>RG= 6.2Ω<br>RD= 3.2Ω,See Fig. 10<br>~~@~~<br>~~@~~|
|tr<br>ee|Rise Time<br>~~ee~~|–––<br>~~ee~~|22<br>~~ee~~|–––|||
|td(off)<br>ee<br>a<br>~~a~~|Turn-Off Delay Time<br>~~ee~~<br>ee<br>~~ee~~|–––<br>~~ee~~<br>ee|33<br>~~ee~~<br>ee|–––|||
|tf<br>~~a~~|Fall Time<br>~~ee~~|–––|28|–––|||
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|840<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~@~~|
|Coss<br>a<br>ee|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|340<br>~~ee~~<br>~~ee~~|–––|||
|Crss<br>ee|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|170<br>~~ee~~|–––|||



## **Source-Drain Ratings and Characteristics** 

||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|0.91|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|ISM<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~rs~~|–––<br>~~Ge~~|–––<br>~~Ge~~|37|||
|VSD<br>~~a~~<br>~~I}~~|Diode Forward Voltage<br>~~rs~~<br>~~I}~~<br>~~+++~~|–––<br>~~Ge~~<br>~~+++~~|–––<br>~~Ge~~<br>~~+++~~|1.3<br>~~++++j{~~|V<br>~~+j{~~|TJ= 25°C, IS= 4.6A, VGS= 0V<br>~~+j{~~<br>~~.~~|
|trr<br>~~a~~<br>~~I}~~<br>~~ee~~|Reverse Recovery Time<br>~~rs~~<br>~~I}~~<br>~~+++~~<br>~~ee~~|–––<br>~~Ge~~<br>~~+++~~|65<br>~~Ge~~<br>~~+++~~<br>~~ee~~|98<br>~~++++j{~~<br>~~ee~~|ns<br>~~+j{~~<br>~~ee~~|TJ= 25°C, IF= 4.6A<br>di/dt = 100A/µs<br>~~+j{~~<br>~~.~~<br>~~ee~~<br>~~@~~|
|Qrr<br>~~I}~~<br>~~ee~~|Reverse RecoveryCharge<br>~~I}~~<br>~~+++~~<br>~~ee~~|–––<br>~~+++~~|160<br>~~+++~~<br>~~ee~~|240<br>~~++++j{~~<br>~~ee~~|nC<br>~~+j{~~<br>~~ee~~||
|ton<br>~~I}~~<br>~~ee~~<br>~~es~~|Forward Turn-On Time<br>~~I}~~<br>~~+++~~<br>~~ee~~<br>~~es~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~+++ +j{~~<br>~~.~~<br>~~ee ee~~<br>~~@~~<br>~~es~~|||||



## **Specification changes** 

|**Rev. #**|**Parameters**|**Old spec.**|**New spec.**|**Comments**|**Revision Date**|
|---|---|---|---|---|---|
|1|VGS(th) (Max.)|2.5V|No spec.|Removed VGS(th)  (Max). Specification|11/1/96|
|1|VGS(Max.)|±20|±16|Decrease VGS(Max).  Specification|11/1/96|



**Notes:** 

O Repetitive rating;  pulse width limited by ® ISD ≤ 4.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C 

@ VDD = 15V, starting TJ = 25°C, L = 13mH ® RG = 25 Ω , IAS = 4.6A. (See Figure 12) 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

www.irf.com 

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## IRLL3303PbF 

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100<br>                   VGS<br> TO P           15V<br>                   10V<br>                   7.0V<br>                   5.5V<br>                   4.5V EE<br>                   4.0V<br>                   3.5V<br> BOT TOM    3.0V<br>| fi ——<br>10 ay flrAmal______<br>UfY/ Ja  3.0V on<br> 20µs PULS E W IDTH<br> T   = 25°CJ<br>1<br>0.1 1 10<br>V      , Drain-to-Source Voltage (V)D S<br>I    , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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100<br>                   VGS<br> TOP           15V<br>                   10V<br>                   7.0V<br>                   5.5V<br>                   4.5V 000<br>                   4.0V<br>                   3.5V<br> BOTTOM   3.0V annul -ammenl<br>Yaall) Zan<br>10<br>| ff  3.0V<br>YUyjp 7 |<br> 20µs P ULSE W IDTH<br> T   = 150°CJ<br>1<br>0.1 1 10<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100 2.0<br> I    = 4.6AD<br>pf Pe LEE<br>aaee eeoe eeaeee eeee aeee 1.5 PEELE<br>P| fe T  =  2 5 °CJ n | ELE ELLHr a<br>ane — ae PELE ey<br>10 pd AiaS| T  = 1 5 0°CJ SSt 1.0 EEenal ATeae<br>OAaee eeeeee eeeeee eeeee eee eeeeee 0.5 PELL EEL ELE<br> V      = 1 0 VD S<br>1 pop pS  2 0 µ s P UL S E  W ID TH  A 0.0 ELE  V       = 10V G S<br>3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Ga te -to-Source Volta ge (V)G S T   , Junction Tem perature (°C)J<br>(Norm alized)<br>D<br>I   , Drain-to-Source C urrent (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

www.irf.com 

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## IRLL3303PbF 

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1600 V       = 0V ,         f = 1M HzG S 20 I    = 4.6AD<br>C      = C     + C     ,   C     SHORTE Diss         gs         gd         ds  V      = 24VDS<br>1400 C      = Crss         gd  V      = 15V  DS<br>= C  iss C      = C     + Coss        ds         gd 16 Pa te Toe<br>1200 NT aa SKI<br>ROSS pfye<br>1000 C oss 12<br>PST RS ttt eee 4<br>Ne PTT | dT dT dT Ay<br>800 PN 7<br>: 8<br>600 KONE ee A<br>C  rss<br>400<br>ARSE) S enn e e 4 Ze<br>TON oj aA | |<br>200<br> F O R TE S T C IR C UIT<br>0 aPe EE A 0 friAn     S EE FIGURE 9 f |<br>1 10 100 0 10 20 30 40 50<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br> OPE RATION IN THIS AREA LIM ITE D<br>ee ee a                        BY R | || DS(on)<br>a ee ee ee ee ee Re<br>LK AN NR 100µs<br>10 cane T  = 150°CJ 7dnee 10 re a |<br>| | | fi) [ft | | f[ | Pa 1m s<br>T  = 25°CJ<br>re) [oe] [ee] A eeOl HH<br> T     = 25°CA<br> T     = 150°CJ 10m s<br>1 P AE V      = 0V G S A 1 L  S ingle Pulse N<br>0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100<br>V     , Source-to-Drain Voltage (V)S D V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>G S<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)S D<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRLL3303PbF 

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RD<br>VDS<br>VGS<br>D.U.T.<br>RG<br>+<br>- VDD<br>)t 10V<br>Pulse Width  ≤ 1  µs<br>Duty Factor  ≤ 0.1 %<br>  Switching Time Test Circuit<br>V90%DS90%DSDS Xfi |<br>|<br>10% /\ |<br>VGSGS By ee<br>td(on)d(on) trr td(off)d(off) tff<br>**----- End of picture text -----**<br>


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a QG<br>10V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

## **Fig 9a.** Basic Gate Charge Waveform 

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Current Regulator<br>| Same Type as D.U.T. |<br>|| 50K Ω || V90%DS90%DSDS fi<br>| 12V .2 µ F .3 µ F | Xfi |<br>! | + |<br>D.U.T. -VDS 10% /\ |<br>VGS VGSGS By ee<br>3mA td(on)d(on) trr td(off)d(off) tff<br>IG tN ID<br>Current Sampling Resistors<br>Fig 9b.   Gate Charge Test Circuit Fig 10b.   Switching Time Waveforms<br>1000<br>100 EL<br>D  = 0.50<br>0.20<br>r r<br>10 0.10<br>0 .05<br>— 0 .02 ery<br>1 = 0 .01 Settee i A PDM<br>t<br>1<br>      S IN G L E  P U LS E t 2<br>0.1 Pelee (TH E R M A L R E S P O N S E ) | NN Notes:<br>1. Duty factor D  =  t   / t 1 2<br>0.01 a ee ee 2. Pea k T   =  P      x Z         + T                                   J D M thJA A                           A<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000<br>t   , Re ctangular Pulse Du ration (sec)1<br>thJA<br>Therm al R esponse (Z       )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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## IRLL3303PbF 

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1 5V<br>VD S L DRIV E R<br>R G D .U.T +<br>- [V][D D]<br>IA S<br>t<br>took 20V<br>t p 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V (BR)DSS<br>~— tp —><br>/<br>/ |\<br>/ \<br>/ \<br>/<br>y \<br>I AS<br>**----- End of picture text -----**<br>


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350<br>                    I D<br>300 ,P|TTet TOP             2.1A                   3.7A<br>BO TTO M     4.6A<br>A ee ee<br>250 PNaN| eee<br>PON<br>200 Ne<br>150 NE TN | tT<br>SN ENE eee<br>100 PNRP|AAI<br>50 Po] ON<br>P| | | ES&S|<br> V      = 15VDD<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction Tem perature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (m J)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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6 

## IRLL3303PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •   Low Stray Inductance<br> •   Ground Plane<br> •   Low Leakage Inductance<br>(aa)       Current Transformer<br>| | -<br>+<br>- - +<br>wh<br>00)<br>RG •   dv/dt controlled by RG +<br>1 ( ns •   Driver same type as D.U.T. - VDD<br>•   ISD controlled by Duty Factor "D"<br>•   D.U.T. - Device Under Test<br>Oo) Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>—— + _<br>t<br>VGS=10V *<br>t<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt J<br>® D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 13.** For N-Channel HEXFETS 

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7 

## IRLL3303PbF 

## SOT-223 (TO-261AA) Package Outline 

Dimensions are shown in milimeters (inches) 

## SOT-223 (TO-261AA) Part Marking Information 

## HEXFET PRODUCT MARKING 

THIS IS AN IRFL014 

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PART NUMBER LOT CODE<br>INTERNATIONAL | [|]<br>RECTIFIER FL014<br>AXXXX<br>LOGO 314P<br>LHUYL. 71 DATE CODE(YYWW) A =  ASSEMBLY SITECODE Le<br>YY =  YEAR<br>WW =  WEEK<br>TOP BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


www.irf.com 

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## IRLL3303PbF 

## SOT-223 (TO-261AA) Tape & Reel Information 

Dimensions are shown in milimeters (inches) 

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2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>T R 1.95 (.077)<br>- T<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>\) Ug] bs 1.60 (.062)<br>Ile ic 1.50 (.059) 1<br>      TYP .<br>FE E D  D IR E C T IO N<br>7.10 (.279) 2.30 (.0 90)<br>6.90 (.272) 2.10 (.0 83)<br>12.10 (.475) et L<br>11.90 (.469)<br>**----- End of picture text -----**<br>


N O T E S  : 

1. C O N TR O LLIN G  D IM E N S IO N : M ILLIME TE R . 

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2. O U T LIN E C O N F O R M S  TO  E IA -481 &  E IA -541.<br>3. E A C H  O 330.00 (13.0 0) R E E L C O N TA IN S  2,500 D E VIC E S. /<br>13.20 (.51 9) 15.40 (.607)<br>: 12.80 (.50 4) 11.90 (.469) els<br>4<br>| 330.00 50.00 (1.969)<br>(13.000)       M IN .<br>  MAX.<br>N O TE S  : 18.40 (.724)<br>      M AX .<br>1.   O U T LIN E  C O M FO R MS  TO  E IA -418-1.<br>2.   C O N TR O LLIN G  D IM EN SIO N : M ILLIM ET ER .. 14.40 (.566) 4<br>3.   D IME N S IO N  M E AS U R E D @  HU B. 12.40 (.488)<br>4.   IN CLU D E S  F LA N G E  D IS TO R T IO N  @  O U T ER  ED G E . 3<br>Data and specifications subject to change without notice.<br>**----- End of picture text -----**<br>


3.   D IME N S IO N  M E AS U R E D @  HU B. O 4.   IN CLU D E S  F LA N G E  D IS TO R T IO N  @  O U T ER  ED G E . 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

www.irf.com 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLL3303TRPBF/power-mosfet-n-channel-30-v-46-a-0031-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irll3303trpbf/mosfet-n-ch-30v-4-6a-sot-223-3/dp/2468050)
---

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