# Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2468049RL/)

**URL**: https://novapart.co/products/IRLL2705TRPBF/power-mosfet-n-channel-55-v-38-a-004-ohm-sot-223
**SKU**: IRLL2705TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2110
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.8A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468049RL/)

PD- 95338 

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**----- Start of picture text -----**<br>
D Voss = 55V<br>_<br>Ω<br>G<br>3.84<br>D~».<br>S<br>**----- End of picture text -----**<br>


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SOT-223<br>**----- End of picture text -----**<br>


|θ<br>θ<br>~~Typ.~~<br>~~Junction-fo-Amb.~~<br>(PCB Mount, steadystate)<br>Junction-to-Amb. (PCB Mount,steadystatey* | <br>* When mounted on FR-4 board using minimum recommended footprint.|
|---|
|** When mounted on 1 inch square copper board, for comparison with other|
|www.irf.com|



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[| _____ Parameter | Min.|Typ.[Max.[Units]<br>[Viewoss Conditions<br>∆<br>F Vienoss Tu]| BD r ain-teakd o -Sourcewn VoltageBreakcownTemp. CoefficientVoltage [55| —- [ 0.061]——|—— — || VI"CV | Ves=OV,lo=250uAReference to 25°C, Ip= mA<br>Rpscon) p= | = fo.0a Ω<br>fon[Vesey [[aeomemmoeere] Static Drain-to-Source On-Resistance | —-SHE | —— [0.051 | feta —<br>fas ___ | ForwardGate ThreshoidTransconductanceVotage ‘|| ‘8.11.0 [ ——-|——|—| 20 | SV | V po s= 28V,lo=19AVoslo=250A<br>i=lose |[omesanminnconeuerSawee Fear tesiege [ESS| — [foo]e| 4 [ Vessteyea VS Sorrzere—<br>[ [Gate-to-Source]<br>fa; Reverse Leakage | —— | —|-100<br>Se | Total Gate Charge SiS | (8 | lo = 38A<br>Og fests shape Tae f af ac [Mena<br>Faron) | Gate-to-Drain (‘Miler’) Charge | —- | 8.7 | 14 Vos = 10V, See Fig. 6 and 9  ©<br>ji || RiseTurn-On TimeDelay Time —S=«dC | | 120.2 | VoIp = 3.8A= 28V<br>Ω<br>Ω,<br>fi «i Faltime —SSC*~dSCSC*~‘idiC Ro=7.1_ See Fig. 10<br>[Css _| Input Capacitance ——SSSSS*C | 870 Ves = OV<br>**----- End of picture text -----**<br>


ISD ≤ ≤ ≤ Ty ≤ 150°C 

® Vpp = 25V, starting Ty = 25°C, L = 15mH @® Pulse width ≤ 300ys; duty cycle ≤ 

Ω 

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100 100<br>                   VGS TOP           15V a                    VGS TOP           15V a<br>                   10V tt oo                    10V tt<br>                   7.0V                    7.0V<br>                   5.5V                    5.5V<br>                   4.5V 0a                    4.5V 0 a<br>                   4.0V                    4.0V<br>                   3.5V                    3.5V<br> BOTTOM   3.0V  BOTTOM   3.0V<br>Peas: eee:<br>fa<br>10 U; 10 } oe<br>| | Mo yiiiy ft | tii yy Sh<br> 3.0V<br> 3.0V<br>| Yf/ 77 ||| | 1 ey /7 Al ee |<br>y Y fr} — fn | Y Yo}<br>Yet MY<br> 20µs PULSE WIDTH  20µs PULSE WIDTH<br>1  T   = 25°CJ A 1  T   = 150°CJ<br>0.1 20ee 1 10 100 ee 0.1 0 1 10 100<br>V      , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>100 2.0<br>See a I    = 3.8ADD aaa<br>ea a e 1.5 BERD DURAGERAGRRAD?v4 DURAGERAGRRAD?v4GERAGRRAD?v4v4<br>re 2400<br>T  = 25°CJ<br>| ee eee Pp a a<br>a ae T  = 150°CJ an<br>10 AeA | | 1.0 PLL Lae eer<br>A| |.eeftee| peyoannyoann<br>0.5<br>e eee eeee ee ee TELE ELE LET<br> V     = 25VDS<br>1 ana  20µs PULSE WIDTH A 0.0 CLE EE EE  V      = 10VGSGS<br>3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)JJ<br>I    , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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1400 20<br>V      = 0V,         f = 1MHzGS I    = 3.8AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds V      = 44VDS<br>1200 | Ciss C      = CC      = rss         gdoss        ds         gdC + C 16 Se V      = 28V DS<br>1000 ~~ <——-—_— >}  4<br>a 12 ane<br>800 ee ee lll Lo<br>Coss<br>NC Pt LT CY<br>600<br>8<br>ee RT eee ll Po tL<br>ell OO<br>400 ee ee JA<br>C rss 4<br>200 PTET rs | AT<br>“WN m  FOR TEST CIRCUIT<br>0 RSEee A 0 A nT     SEE FIGURE 9<br>1 10 100 0 10 20 30 40 50<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>ee —_ mall<br>es -—| al 4 aaeuil i l<br>10µs<br>ee ee i es 10 CEA / iM<br>T  = 150°CJ ov N E| 100µs<br>10<br>aes eeeeee22 ee.ee T  = 25°CJ PTpT 1ms<br>1<br>10ms<br>| pp p<br>T     = 25°CA<br>T     = 150°CJ<br>1 Oy GrG e V      = 0VGS A 0.1  Single Pulse aeeepaS|<br>0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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## HEXFET PRODUCT MARKING 

THIS IS AN IRFL014 

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PART NUMBER LOT CODE<br>INTERNATIONAL<br>RECTIFIER 7 FL014 AXXXX<br>LOGO 314P<br>‘oR |<br>eo DATE CODE A =  ASSEMBLY SITE<br>CJ a) CL] (YYWW) CODE<br>YY =  YEAR<br>WW =  WEEK<br>TOP BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


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2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>"| a7<br>O O oO Oo/O6 Oo 6 6<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>FN) CG fe 7.10 (.279) 4 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475) co<br>11.90 (.469)<br>NOTES :<br>1. CONTROLLING DIMENSION: MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. /<br>13.20 (.519) 15.40 (.607)<br>d 12.80 (.504) 11.90 (.469) a<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| OO |<br>NOTES : aiiL 18.40 (.724)<br>      MAX.<br>1.   OUTLINE COMFORMS TO EIA-418-1.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) I 4<br>3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


3.   DIMENSION MEASURED @ HUB. G 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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