# Power MOSFET, N Channel, 30 V, 5.5 A, 0.045 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2777393/)

**URL**: https://novapart.co/products/IRLL2703TRPBF/power-mosfet-n-channel-30-v-55-a-0045-ohm-sot-223
**SKU**: IRLL2703TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 2.1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 2.1W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.045ohm |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5.5A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2777393/)

Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 30V<br>R  = 0.045Ω<br>DS(on)<br>G<br>ID = 3.9A<br>S<br>**----- End of picture text -----**<br>


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application. 

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SOT-223<br>**----- End of picture text -----**<br>


|~~TT~~<br>~~Rs~~|**Parameter**<br>~~TT~~|**Max.**<br>~~PT~~|**Units**<br>~~PT~~|
|---|---|---|---|
|ID@ TA= 25°C<br>~~TT~~<br>~~Rs~~<br>~~So~~|Continuous Drain Current, VGS@ 10V**<br>~~TT~~<br>~~So~~|5.5<br>~~PT~~<br>~~]—7~~|~~PT~~<br>~~]—7~~<br>~~a~~<br>~~a~~|
|ID@ TA= 25°C<br>~~Rs~~<br>~~So~~|Continuous Drain Current, VGS@ 10V*<br>~~So~~|3.9<br>~~]—7~~||
|ID@ TA= 70°C<br>~~So~~<br>~~a~~|Continuous Drain Current, VGS@ 10V*<br>~~So~~<br>~~a~~|3.1<br>~~]—7~~<br>~~a~~||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~a~~|16<br>~~a~~||
|PD@TA= 25°C<br>~~a~~|Power Dissipation(PCB Mount)**<br>~~a~~|2.1<br>~~a~~|W<br>~~a~~|
|PD@TA= 25°C<br>~~a~~|Power Dissipation(PCB Mount)*<br>~~a~~|1.0<br>~~a~~|W<br>~~a~~|
|~~oe~~|Linear DeratingFactor(PCB Mount)*<br>~~oe~~|8.3<br>~~oe~~|mW/°C<br>~~oe~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 16<br>~~a~~|V<br>~~a~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|180<br>~~a~~|mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Current<br>~~a~~|3.9<br>~~a~~|A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>*<br>~~a~~|0.1<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a:~~|Peak Diode Recoverydv/dt<br>~~a:~~|5.0<br>~~a:~~|V/ns<br>~~a:~~|
|TJ,TSTG<br>~~a~~|Junction and Storage Temperature Range|-55  to + 150|°C|



## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|es<br>~~Re~~|**Parameter**<br>es<br>|**Min.**<br>es<br>~~Ge~~|**Typ. **<br>es<br>~~Ge~~|**Max. **<br>es<br>~~Ge GQ~~|**Units**<br>es<br>~~GQ~~|**Conditions**<br>es<br>~~GQ~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Cs~~<br>~~Re~~|Drain-to-Source Breakdown Voltage<br>~~Cs~~<br>~~en~~<br>~~**|**~~|30<br>~~Cs~~<br>~~Ge~~<br>~~**|**~~|–––<br>~~Cs~~<br>~~Ge~~|–––<br>~~Cs~~<br>~~Ge GQ~~|V<br>~~Cs~~<br>~~GQ~~|VGS= 0V, ID= 250µA<br>~~Cs~~<br>~~GQ~~|
|∆V(BR)DSS/∆TJ<br>~~Re~~|Breakdown Voltage Temp. Coefficient<br>~~en~~<br>~~**|**~~|–––<br>~~Ge~~<br>~~**|**~~|0.06<br>~~Ge~~|–––<br>~~Ge GQ~~|V/°C<br>~~GQ~~|Reference to 25°C, ID= 1mA<br>~~GQ~~|
|RDS(on)<br>~~Re~~<br>~~—————~~|Static Drain-to-Source On-Resistance<br>~~en~~<br>~~**|**~~<br>**|**~~|~~<br>~~—————~~|–––<br>~~Ge~~<br>~~**|**~~<br>**|**|––– <br>~~Ge~~<br>~~|~~|0.045<br>~~Ge GQ~~<br>~~|~~|Ω<br>~~GQ~~<br>~~—————~~|VGS= 10V, ID= 3.9A<br>~~GQ~~|
|||–––<br>~~**|**~~<br>**|**~~|~~|–––|0.060||VGS= 5.0V, ID= 3.1A|
|||–––<br>**|**~~|~~<br>~~—————~~|––– <br>~~—————~~|0.070<br>~~—————~~||VGS= 4.0V, ID= 2.0A|
|VGS(th)<br>~~—————~~<br>~~ee~~|Gate Threshold Voltage<br>~~|~~<br>~~—————~~<br>~~ee~~|1.0<br>~~|~~<br>~~—————~~|–––<br>~~—————~~|2.4<br>~~—————~~|V<br>S<br>~~—————~~<br>~~Po~~|VDS= VGS, ID= 250µA<br>~~Po~~|
|gfs<br>~~—————~~<br>~~ee~~|Forward Transconductance<br>~~—————~~<br>~~ee~~|5.9<br>~~—————~~|–––<br>~~—————~~|–––<br>~~—————~~||VDS= 25V, ID= 2.3 A<br>~~Po~~|
|IDSS<br>~~—————~~<br>~~ee ~~<br>~~ee~~<br>~~———————————~~|Drain-to-Source Leakage Current<br>~~—————~~<br> ~~ee~~<br>~~ee~~<br>~~|~~<br>~~———————————~~|–––<br>~~—————~~<br>~~ee~~<br>~~|~~<br>~~|~~|–––<br>~~—————~~<br>~~ee~~<br>~~|~~|25<br>~~—————~~<br>~~ee~~<br>~~|~~|µA<br>~~—————~~<br>~~Po~~<br>~~ee~~<br>~~PO~~<br>~~———————————~~|VDS= 30V, VGS= 0V<br>~~Po~~<br>~~ee~~<br>~~PO~~|
|||–––<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~———————————~~|–––<br>~~ee~~<br>~~|~~<br>~~———————————~~|250<br>~~ee~~<br>~~|~~<br>~~———————————~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~PO~~<br>~~———————————~~|
|~~———————————~~<br>~~——~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~———————————~~<br>~~**e**e~~|–––<br>~~|~~<br>~~| ~~<br>~~———————————~~<br>es|–––<br> ~~|~~<br>~~———————————~~|100<br>~~| ~~<br>~~———————————~~|nA<br> ~~PO~~<br>~~———————————~~<br>~~PO~~|VGS= 16V<br>~~PO~~<br>~~———————————~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~———————————~~<br>~~**e**e~~|–––<br>~~———————————~~<br>es|–––<br>~~———————————~~|-100<br>~~———————————~~||VGS= -16V<br>~~———————————~~<br>~~PO~~|
|Qg<br>~~———————————~~<br>~~——~~<br>ee|Total Gate Charge<br>~~———————————~~<br>~~**e**e~~<br>~~e~~|–––<br>~~———————————~~<br>es<br>~~e~~|9.3<br>~~———————————~~<br>~~e~~|14<br>~~———————————~~<br>~~e~~|nC<br>~~———————————~~<br>~~PO~~|ID= 2.3A<br>VDS= 24V<br>VGS= 5.0V, See Fig. 6 and 9<br>~~———————————~~<br>~~PO~~<br>~~@~~|
|Qgs<br>~~——~~<br>ee<br>~~ee~~|Gate-to-Source Charge<br>~~**e**e~~<br>~~e~~<br>~~ee~~|–––<br>es<br>~~e~~|2.3<br>~~e~~|3.4<br>~~e~~|||
|Qgd<br>~~——~~<br>ee<br>~~ee~~<br>~~es~~|Gate-to-Drain("Miller")Charge<br>~~**e**e~~ <br>~~e~~<br>~~ee~~|–––<br> es<br>~~e~~|5.1<br>~~e~~|7.6<br>~~e~~|||
|td(on)<br>~~ee ~~<br>~~es~~<br>ee|Turn-On Delay Time<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~|7.4<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 15V<br>ID= 2.3A<br>RG= 6.2Ω<br>RD= 6.5Ω,See Fig. 10<br>~~@~~<br>~~®~~|
|tr<br>~~es~~<br>ee<br>es|Rise Time<br>~~ee~~|–––<br>~~ee~~|24<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>ee<br>es<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|6.9<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>es<br>~~ee~~<br>~~RR~~|Fall Time<br>~~ee~~<br>|–––<br>|14<br>|–––<br>|||
|Ciss<br>~~ee~~<br>~~RRes~~|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|530<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~®~~|
|Coss<br>~~RRes~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|230<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|95<br>~~ee~~|–––<br>~~ee~~|||



## **Source-Drain Ratings and Characteristics** 

s **Parameter Min.** ~~s~~ **Typ. Max. Units Conditions** IS Continuous Source Current MOSFET symbol 3.9 (Body Diode) showing  the ISM Pulsed Source Current integral reverse 16 ~~Fe]~~ (Body Diode) p-n junction diode. ~~sO~~ VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.3A, VGS = 0V trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = 2.3A ~~SERs~~ Qrr Reverse RecoveryChar ~~a~~ ge ––– 62 94 nC di/dt = 100A/µs ~~@ Rs~~ ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 

## **Notes:** 

1) Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 2) Starting TJ = 25°C, L = 24 mH RG = 25Ω, IAS = 3.9A. (See Figure 12) 

ISD ≤ , di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. 

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 100 VGS  100 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>7.0V 7.0V<br>5.5V 5.5V<br>4.5V et HH 4.5V foo<br> 10 4.0V3.5V A 4.0V3.5V Hieet<br>BOTTOM 2.7V BOTTOM 2.7V<br> 10<br> 1 CZGE | ll SS Ai ee<br>a ee ee eee "Lt 4<br> 1<br>Seer ems ee 2<br>2.7V<br>0.1 ea 2.7V SS te<br>Sess eee eee A<br>PA i A<br>ALT = 20µs PULSE WIDTHT  = 25J °C A 20µs PULSE WIDTHT  = 150J °C<br>0.01 0.1<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 2.0<br>ID = 3.9A<br>ER=======———a eeee ee ee eee PEELE LEE<br>ee ee ee ee eee<br>1.5<br>a a PLE<br> 10 En T  = 150  CJ ° na Seal<br>a ee | 2 ee ee ee ee ee eee 1.0 = LAT I<br>| T  = 25  CJ ° TTL LEH<br> 1 i7y, , | | | | | aaae<br>Sour Gees aes an 0.5 PEELE<br>+aFf PEELEEEE EET<br>V      = 25VDS<br>i 20µs PULSE WIDTH V EE GS = 10V E<br>0.1 ee 0.0 EEEEEEEEEEEEEER<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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1000<br>VGSGS = 0V, f = 1MHz<br>||| CCissrssCissrssCossissrssrssoss === CCgsgdCgsgdCdsgsgdgdds + Cgd ,gd , C      SHORTEDdsds<br>800 Cossissrssrssoss = Cdsgsgdgdds + Cgdgd<br>wal<br>Cississ<br>NpNPpNP SE<br>600<br>ell<br>Cossoss<br>B E [[eel]] | TT TT<br>400 l l<br>EEE ||<br>200 Crssrss<br>p e<br>0 a ellll<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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15<br>VGSGS = 0V, f = 1MHz ID = 2.3A<br>||| === + Cgd ,gd , C      SHORTEDdsds P t<br>800 wal CCissrssCissrssCossissrssrssoss = CCgsgdCgsgdCdsgsgdgdds + Cgdgd 12 | cE VVDSDS == 24V 15V<br>Cississ<br>NpNPpNP SE or P| ty Nm<br>600 ell 9<br>Cossoss pf | | | LAY<br>B E [[eel]] | TT TT PoP tT Tt |<br>400 l l 6 eee Zee<br>EEE || Pt tT | Ye<br>200 Crssrss 3<br>p e P| tT Ty<br>FOR TEST CIRCUIT<br>0  1 a ellll  10 llllllll  100 0 0 lYi| 4 a | 8 SEE FIGURE        a 12 13 16<br>V     , Drain-to-Source Voltage (V)DSDS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>a =<br> 10<br>| T  = 150  CJ | ° | aA | | | DY 100us<br> 10<br>- A 0s<br>°<br>oe a T  = 25  CJ Sr St<br> 1 1ms<br>ff——  ___._| __ Santesean a i pa<br>= | fi] f] ft | ht  T TAJ = 25  C= 150  C A ° ° HS 10ms |<br>0.1 |oe V      = 0 V GS  1 a  Single Pulse Sa e mili<br>0.2 0.6 1.0 1.4 1.8 0.1  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


- **Fig 7.** Typical Source-Drain Diode Forward Voltage 

## **Fig 8.** Maximum Safe Operating Area 

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4.0<br>PN ms<br>SAE EE ves<br>3.0 PNmM EEE e D.U.T.<br>+<br>-<br>EEREPN e l<br> S<br>2.0 Pitt NG 80¥ ≤ 1<br>≤ 0.1 %<br>EERE partner ©<br>Fig 10a.   Switching Time Test Circuit<br>1.0 Pit EL TN<br>COPPA VDS<br>90%<br>0.0<br>25 50 75 100 125 150 |<br>T   , Case TemperatureC (  C)° |<br>|<br>10%<br>Fig 9.   pe Maximum Drain Current Vs.Case Temperature t} tt VGS AY. t |\< d(on) al tr >|| t <b d(off) tf<br>Fig 10b.   Switching Time Waveforms<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 1000<br>PTTe<br> 100 AA<br>D = 0.50<br>0.20<br>= 0.10 S e eC rie ein<br> 10<br>0.05<br>0.02 PDM<br>0.01 t1<br>y p py<br> 1<br>t 2<br>eae 1 SINGLE PULSE ea) |<br>(THERMAL RESPONSE) Notes:<br>e e 1. Duty factor D = t   / t1 2<br>a e eeeeee 2. Peak T J = P DM x  Z thJA + TA<br>0.1<br>0.0001 0.001 0.01 0.1  1  10  100  1000<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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500<br>ID<br>pT TOP 1.7A<br>3.1A<br>15V Galan<br>400 Ne BOTTOM 3.9A<br>L DRIVER PAE<br>VDS 300 PN]ft<br>G D.U.T +<br>- [[V][DD]][[DD]] 200 NIN|<br>IASAS A<br>10V<br>tpp 0.01ΩΩ<br>100<br>Pp SNACLK tt<br> Unclamped Inductive Test Circuit HSS<br>eee ~~<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>V(BR)DSS(BR)DSS<br><— tp —>»<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>/<br>y |<br>/ |<br> Unclamped Inductive Waveforms Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>. QG rt .3µF<br>+<br>QGS e Q sts GD — LL it) D.U.T. ! -VDS<br>VGS<br>VG<br>3mA<br>Moo @ |<br>Cra IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [[V][DD]][[DD]]<br>IASAS<br>10V<br>tpp 0.01ΩΩ<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS(BR)DSS<br><— tp —>»<br>/<br>y |<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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## HEXFET PRODUCT MARKING 

THIS IS AN IRFL014 

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PART NUMBER LOT CODE<br>INTERNATIONAL<br>RECTIFIERLOGO -as FL014 A 314P AXXXX<br>ron<br>Tu | DATE CODE A =  ASSEMBLY SITE<br>LC a) CJ (YYWW) CODE<br>YY =  YEAR<br>TOP WW =  WEEK BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


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2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>"| a7<br>O O oO O|Oo Oo 6 O<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>EN) Gf 7.10 (.279) 1 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475) co<br>11.90 (.469)<br>NOTES :<br>1. CONTROLLING DIMENSION: MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. /<br>13.20 (.519) 15.40 (.607)<br>® 12.80 (.504) 11.90 (.469) oI<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| OO |<br>NOTES : JL 18.40 (.724)<br>      MAX.<br>1.   OUTLINE COMFORMS TO EIA-418-1.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) IE 4<br>3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


3.   DIMENSION MEASURED @ HUB. a 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04 

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