# Power MOSFET, N Channel, 55 V, 5 A, 0.06 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2726005/)

**URL**: https://novapart.co/products/IRLL024ZTRPBF/power-mosfet-n-channel-55-v-5-a-006-ohm-sot-223
**SKU**: IRLL024ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2750
**Stock**: 200+
**Lead Time**: 148 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 2.8W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 5A |
| Drain Source On State Resistance | 0.06ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2726005/)

PD - 95990A 

## IRLL024ZPbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design  are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of applications. 

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D<br>VDSS = 55V<br>R  = 60m Ω<br>DS(on)<br>G<br>ID = 5.0A<br>S<br>7.<br>~<br>‘é<br>SOT-223<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~———~~|**Parameter**<br>~~———a~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TA= 25°C<br>~~———~~|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~eT~~<br>~~———a~~|5.0<br>~~eT~~|A<br>|
|ID@ TA= 70°C<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~———a~~<br>~~a~~|4.0<br>||
|IDM<br>~~———~~<br>~~a~~|Pulsed Drain Current<br>~~———a~~<br>~~a~~|40<br>||
|PD@TA= 25°C<br>~~———~~<br>~~a~~<br>~~a~~|Power Dissipation<br>~~——— a~~<br>~~aa~~<br>~~a~~|2.8<br>~~a~~<br>~~a~~|~~a~~<br>~~a~~|
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~a~~<br>~~es~~|1.0<br>~~a~~<br>~~es~~|W<br>~~a~~<br>~~es~~|
|~~a~~|Linear Derating Factor<br>~~a~~<br>~~es~~<br>~~OS~~|0.02<br>~~a~~<br>~~es~~<br>~~OS~~|W/°C<br>~~a~~<br>~~es~~<br>~~OS~~|
|VGS|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~es~~|± 16<br>~~es~~|V<br>~~es~~|
|EAS(Thermallylimited)|Single Pulse Avalanche Energy<br>~~es~~<br>~~oo~~|21<br>~~es~~<br>~~oo~~|mJ<br>~~es~~<br>~~oo~~|
|EAS(Tested)<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~oo~~<br>~~©~~<br>~~a~~|38<br>~~oo~~<br>~~©~~||
|IAR<br>~~a~~|Avalanche Current<br>~~oo~~<br>~~©~~<br>~~a~~|See Fig.12a, 12b, 15, 16<br>~~oo~~<br>~~©~~|A<br>~~oo~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~||mJ|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 150|°C|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **<br>~~GO~~|**Max. **<br>~~GO~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|55<br>~~GO~~|–––<br>~~GO~~<br>~~GO~~<br>~~I~~|–––<br>~~GO~~<br>~~GO~~<br>~~OG~~|V<br>~~GO~~<br>~~OG~~|VGS= 0V, ID= 250µA<br>~~GO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~Gs~~|–––<br>~~Gs~~|0.049<br>~~GO~~<br>~~Gs~~<br>~~I~~|–––<br>~~GO~~<br>~~Gs~~<br>~~OG~~|V/°C<br>~~Gs~~<br>~~OG~~|Reference to 25°C, ID= 1mA<br>~~Gs~~|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|48<br>~~I ~~<br>~~fT~~|60<br> ~~OG~~<br>~~fT~~|mΩ<br>~~OG~~<br>~~(OO~~|VGS= 10V, ID= 3.0A<br>©|
|||–––<br>~~|~~|–––<br>~~TT~~<br>~~|~~|80<br>~~TT~~||VGS= 5.0V, ID= 3.0A<br>©<br>~~®~~|
|||–––<br>~~|~~|–––<br>~~|~~<br>~~DCO~~|100<br>~~DCO~~||VGS= 4.5V, ID= 3.0A<br>~~®~~<br>~~(OO~~|
|VGS(th)|Gate Threshold Voltage<br>~~Gs~~|1.0<br>~~|~~<br>~~Gs~~|–––<br>~~|~~<br>~~Gs~~<br>~~DCO~~<br>~~GD~~|3.0<br>~~Gs~~<br>~~DCO~~<br>~~GO~~|V<br>~~Gs~~<br>~~(OO~~<br>~~QO~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~Gs~~<br>~~(OO~~<br>~~(O~~|
|gfs|Forward Transconductance<br>~~Gs~~<br>~~Gs~~|7.5<br>~~Gs~~<br>~~Gs~~|–––<br>~~Gs~~<br>~~DCO~~<br>~~Gs~~<br>~~GD~~|–––<br>~~Gs~~<br>~~DCO ~~<br>~~Gs~~<br>~~GO~~|S<br>~~Gs~~<br> ~~(OO~~<br>~~Gs~~<br>~~QO~~|VDS= 25V, ID= 3.0A<br>~~Gs~~<br>~~(OO~~<br>~~Gs~~<br>~~(O~~|
|IDSS|Drain-to-Source Leakage Current<br>~~Gs~~<br>~~LE~~|–––<br>~~Gs~~<br>~~LE~~|–––<br>~~Gs~~<br>~~GD ~~<br>~~LE~~|20<br>~~Gs~~<br> ~~GO~~<br>~~LE~~|µA<br>~~Gs~~<br>~~QO ~~<br>~~LE~~|VDS= 55V, VGS= 0V<br>~~Gs~~<br> ~~(O~~<br>~~LE~~|
|||–––<br>~~LE~~|–––<br>~~LE~~<br>~~fT~~|250<br>~~LE~~<br>~~fT~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~LE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|200<br>~~a~~|nA<br>~~a~~|VGS= 16V<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~PTT~~|–––<br>~~a~~<br>~~PTT~~|-200<br>~~a~~<br>~~PTT~~||VGS= -16V<br>~~a~~|
|Qg|Total Gate Charge|–––|7.0|11|nC|ID= 3.0A<br>VDS= 44V<br>VGS= 5.0V<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~es~~|–––<br>~~ee~~|1.5<br>~~ee~~|–––|||
|Qgd<br>~~a~~|Gate-to-Drain ("Miller") Charge<br>~~es~~<br>~~a~~|–––<br>~~ee~~<br>|4.0<br>~~ee~~<br>|–––<br>|||
|td(on)<br>~~a~~|Turn-On DelayTime<br>~~es ~~<br>~~a~~|–––<br> ~~ee ~~<br>|8.6<br> ~~ee~~<br>|–––<br>|ns|VDD= 28V<br>ID= 3.0A<br>RG= 56Ω<br>VGS= 5.0V<br>~~®~~<br>~~®~~|
|tr<br>~~a~~|Rise Time<br>~~a~~<br>~~ee~~|–––<br><br>~~es~~|33<br>|–––<br>|||
|td(off)<br>|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|20<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~es~~|15|–––|||
|Ciss<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~ee~~<br>~~a~~|–––<br>~~es~~<br>~~ee~~<br>|380<br>~~ee~~<br>|–––<br>~~ee~~<br>|pF|VDS= 25V<br>ƒ= 1.0MHz<br>VGS= 0V<br>~~®~~|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~|–––<br>|66<br>|–––<br>|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>~~a~~|–––<br>|36<br>|–––<br>|||
|Coss<br><br>~~a~~|Output Capacitance<br>~~ee~~<br>~~a~~|–––<br>~~ee~~|220<br>~~ee~~|–––<br>~~ee~~||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~aen~~|–––<br>~~es~~|53|–––||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~g~~|
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~aen~~|–––<br>~~es~~|93|–––||VGS= 0V, VDS= 0V to 44V<br>~~g~~|



©) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive  avalanche performance. 

® Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

- @ Limited by TJmax, starting TJ = 25°C, L = 4.8mH © This value determined from sample failure population. RG = 25 Ω , IAS = 3.0A, VGS =10V. 100% tested to this value in production. 

© This value determined from sample failure population. 100% tested to this value in production. @ When mounted on 1 inch square copper board. When mounted on FR-4 board using minimum recommended footprint. 

Part not recommended for use above this value. @ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

- ® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

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100 100<br>VGS VGS<br>TOP           10V TOP           10V<br>9.0V 9.0V<br>7.0V 7.0V<br>5.0V 5.0V<br>PT ee 4.5V PC ett 4.5V<br>4.0V 4.0V<br>10 | Gg — 3.5V 10 g e 3.5V<br>BOTTOM 3.0V BOTTOM 3.0V<br>7 a 3.0V fer 3.0V<br>1 1<br>e tm TTT | | 7a |<br>≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.1 BaieHH yy | 0.1 Bie HH pint |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 10<br>TJ = 25°C<br>a 8 4 ——<br>TJ = 150°C<br>10<br>TJ = 150°C<br>e s 4 6 ee<br>ee ee / ee ee ee ee<br>4<br>1 TJ = 25°C<br>2<br>Se VDS = 10V } VDS = 10V<br>300µs PULSE WIDTH<br>|] ≤ 60µs PULSE WIDTH<br>0.1 e a ee 0<br>0 2 4 6 8 10 0 2 4 6 8 10 12<br>ID,Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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10000 6.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 3.0A<br>a Crss   = Cgd  5.0 VDS= 44V aan<br>Coss  = Cds + Cgd VDS= 28V<br>ae a V = 11V TI]<br>1000 4.0 DS<br>C<br>iss<br>een A<br>S rT eeger || 3.0 P [IZA|<br>C<br>100 p or T oss eet eat 2.0 P VT |} yf<br>C<br>rss<br>a ee ee ee 1.0<br>10 aPCIEee ee eeTT 0.0 J) ty} tid.<br>1 10 100 0 1 2 3 4 5 6 7 8<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>100 1000<br>OPERATION IN THIS AREA<br>100 LIMITED BY R DS(on)<br>T = 150°C<br>J  10<br>10<br>100µsec<br>1<br>TJ = 25°CJ = 25°C= 25°C 0.1<br>1 1msec<br>0.01 DC 10msec<br>TA = 25°C<br>0.001<br>Tj = 150°C<br>VGS = 0VGS = 0V= 0V Single Pulse<br>0 0.0001<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1.0 10 100 1000.0<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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100<br>T = 150°C<br>J<br>10<br>TJ = 25°CJ = 25°C= 25°C<br>1<br>VGS = 0VGS = 0V= 0V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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5 2.0<br>ID = 3.0A<br>VGS = 10V<br>4<br>P S a a<br>1.5<br>3 E N aoa<br>m a NOE LL E EL<br>2<br>1.0<br>P N A<br>1<br>P NY P YY) e<br>0 en e e 0.5 dee<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br> TA , Ambient Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Ambient Temperature vs. Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1 R1 R1 R2 R2 R3R3 Ri (°C/W)     τ i (sec)<br>τ J τ J τ C τ 5.3396    0.000805<br>0.01 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 19.881    0.706300<br>Ci=  τ i / Ri 19.771     20.80000<br>SINGLE PULSE Ci i / Ri<br>0.001 ( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJA )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>e ly<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>/ |<br>IAS a |n<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


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Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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100<br>ID<br>TOP         3.0A<br>80 0.80A<br>BOTTOM 0.69A<br>b e<br>60<br>C EE<br>40<br>A LLE LT<br>20 T ESST<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>BSCaR E R EE<br>Fig 12c.   Maximum Avalanche Energy<br>vs. Drain Current<br>2.5<br>2.0<br>ID = 250µA<br>1.5<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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100<br>PFE EEE EEEHEHE EPR EEE EEE<br>10 Duty Cycle = Single Pulse Allowed avalanche Current vs<br>RTT PA E PEE EEE<br>avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>P 0.01 ST<br>1<br>0.05<br>0.10<br>0.1<br>aa cee e l<br>PP ER TA FERRE Fp PS Stiembfee h t t l<br>a a ee ee |<br>0.01<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>25 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>20 ID = 3.0A   Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>15 P NG   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>10 NEN EE 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>IN, ~~ NS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>5 6. Iav = Allowable avalanche current.<br>O NESUT 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 L INN   tav = Average time in avalanche.<br>25 50 75 100 125 150   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## HEXFET PRODUCT MARKING 

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THIS IS AN IRFL014<br>**----- End of picture text -----**<br>


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a| PART NUMBER LOT CODE<br>INTERNATIONAL<br>RECTIFIERLOGO i FL014314P AXXXX<br>fro n<br>WUHoH dyHY DATE CODE(YYWW) A =  ASSEMBLY SITECODE<br>YY =  YEAR<br>TOP WW =  WEEK BOTTOM<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT (OPTIONAL)<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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2.05 (.080) 4.10 (.161)3.90 (.154) 1.85 (.072)1.65 (.065) 0.35 (.013)0.25 (.010)<br>TR 1.95 (.077)<br>- T<br>OO oO O|O Oo O ©<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>FN) Gf 7.10 (.279) 4 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475) co<br>11.90 (.469)<br>NOTES :<br>1. CONTROLLING DIMENSION: MILLIMETER.<br>2. OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. /<br>13.20 (.519) 15.40 (.607)<br>‘ 12.80 (.504) 11.90 (.469) TT<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>| OO |<br>NOTES : _l|[L 18.40 (.724)<br>      MAX.<br>1.   OUTLINE COMFORMS TO EIA-418-1.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) IE 4<br>3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>ao 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLL024ZTRPBF/power-mosfet-n-channel-55-v-5-a-006-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irll024ztrpbf/mosfet-n-ch-55v-5a-sot-223/dp/2726005)
---

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