# Power MOSFET, N Channel, 55 V, 3.1 A, 0.065 ohm, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2468048/)

**URL**: https://novapart.co/products/IRLL024NTRPBF/power-mosfet-n-channel-55-v-31-a-0065-ohm-sot-223
**SKU**: IRLL024NTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2710
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.1A |
| Drain Source On State Resistance | 0.065ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2468048/)

IRLL024NTRPbF ~~—~~ 

## ~~Cinfin eon~~ 

- Surface Mount 

- Advanced Process Technology 

- Ultra Low On-Resistance 

- Dynamic dv/dt Rating 

- Fast Switching 

- Fully Avalanche Rated 

- Lead-Free 

## **Description** 

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application. 

||IRLL024NTRPbF<br>~~—~~|
|---|---|
||HEXFET®Power MOSFET|
|**G**<br>Gate|**VDSS**<br>**55V**<br>**RDS(on)**<br>**0.065**<br>**ID**<br>**3.1A**<br>**D**<br>**S**<br>Drain<br>Source<br>SOT-223<br>~~—-—~~|



|**Base Part Number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRLL024NTRPbF<br>SOT-223<br>Tape and Reel<br>2500<br>IRLL024NTRPbF<br>~~pf}~~|**Base Part Number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>IRLL024NTRPbF<br>SOT-223<br>Tape and Reel<br>2500<br>IRLL024NTRPbF<br>~~pf}~~||
|---|---|---|
|**Absolute Maximum Ratings**|||
|**Symbol**<br>**Parameter**<br>**Max.**|**Units**||
|ID @TA= 25°C<br>Continuous Drain Current, VGS @10V**<br>4.4|||
|ID @TA= 25°C<br>Continuous Drain Current,VGS @10V*<br>3.1|A||
|ID @TA= 70°C<br>Continuous Drain Current,VGS @10V*<br>2.5|||
|IDM<br>Pulsed Drain Current<br>12|||
|PD @TA= 25°C<br>Maximum Power Dissipation(PCB Mount) **<br>2.1<br>W<br>PD @TA= 25°C<br>Maximum Power Dissipation(PCB Mount) *<br>1.0<br>Linear DeratingFactor(PCB Mount) *<br>8.3<br>mW/°C<br>~~se~~|||
|VGS<br>Gate-to-SourceVoltage<br>± 16|V||
|EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>120|mJ||
|IAR<br>Avalanche Current<br>3.1|A||
|EAR<br>Repetitive Avalanche Energy *<br>0.1<br>mJ<br>dv/dt<br>Peak Diode Recoverydv/dt<br>5.0<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 150<br>°C<br>TSTG<br>StorageTemperatureRange<br>~~a~~|||
|**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) *<br>90<br>120<br>RJA<br>Junction-to-Ambient(PCB Mount,steadystate) **<br>50<br>60<br>~~—————————~~<br>~~ee~~|||
|*<br>When mounted on FR-4 board using minimum recommended footprint.|||
|**When mounted on 1 inch square copper board, for comparison with other SMD devices.|||
|1<br>2019-01-28<br>~~ee~~|||



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IRLL024NTRPbF ~~[~~ 

|~~ee~~<br>~~ee~~<br>~~es~~|**Parameter**<br>~~I~~<br>~~Rs~~|**Min.**<br>~~ts~~<br>~~Rs~~<br>~~rs~~|**Typ. Max. Units**<br>~~ts~~<br>~~Rs~~<br>~~rs~~|**. Max. Units**<br>~~ts~~<br>~~Rs~~|**. Max. Units**<br>~~Rs~~|**. Max. Units**<br>**Conditions**<br>~~Rs~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ee~~<br>~~ee~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~I~~<br>~~Rs~~|55<br>~~ts~~<br>~~Rs~~<br>~~rs~~|–––<br>~~ts~~<br>~~Rs~~<br>~~rs~~|–––<br>~~ts~~<br>~~Rs~~|V<br>~~Rs~~|VGS =0V, ID =250µA<br>~~Rs~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~ee~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~Rs~~|––– 0.048<br>~~Rs~~<br>~~rs~~<br>~~a~~|––– 0.048<br>~~Rs~~<br>~~rs~~<br>~~ee~~|–––<br>~~Rs~~<br>~~ee~~|V/°C Reference to 25°C<br>~~Rs~~<br>~~ee~~|V/°C Reference to 25°C,ID= 1mA<br>~~Rs~~<br>~~ee~~|
|RDS(on)<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance|–––<br>~~rs ~~<br>~~a~~<br>~~a~~|–––<br> ~~rs~~<br>~~ee~~<br>~~es~~|0.065<br>~~ee~~<br>~~e~~|<br>~~ee~~<br>~~e~~e<br>~~ee~~|VGS= 10V,ID= 3.1A<br>~~ee~~|
|||–––<br>~~a~~<br>~~a~~<br>~~a ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~|0.080<br> ~~ee~~<br>~~e~~<br>~~ee~~||VGS= 5.0V,ID= 2.5A<br>~~ee~~|
|||–––<br>~~a~~<br>~~a ee~~|–––<br>~~es ~~<br>~~ee~~|0.100<br> ~~e~~<br>~~ee~~||VGS= 4.0V,ID= 1.6A|
|VGS(th)<br>~~es~~|Gate Threshold Voltage|1.0<br>~~a ee~~|–––<br>~~ee~~|2.0<br>~~ee~~|V<br>~~ee~~|VDS= VGS,ID= 250µA|
|gfs<br>~~es~~<br>~~Be~~|Forward Trans conductance<br>~~Be~~<br>~~|~~|3.3<br>~~a ee~~<br>~~Be~~<br>~~|~~|–––<br>~~ee~~<br>~~Be~~<br>~~SE~~<br>|–––<br>~~ee ~~<br>~~Be~~<br>~~SE~~<br>|S<br> ~~ee~~<br>~~Be~~<br>~~EE~~<br>|VDS =25V, ID =1.9A<br>~~Be~~<br>~~EE~~<br>|
|IDSS<br>~~Be~~<br>~~ES~~|Drain-to-Source Leakage Current<br>~~Be~~<br>~~ES~~<br>~~|~~|–––<br>~~Be~~<br>~~ES~~<br>~~|~~|–––<br>~~Be~~<br>~~ES~~<br>~~SE~~<br>|25<br>~~Be~~<br>~~ES~~<br>~~SE~~<br>|µA<br>~~Be~~<br>~~ES~~<br>~~EE~~<br>|VDS =55 V, VGS =0V<br>~~Be~~<br>~~ES~~<br>~~EE~~<br>|
|||–––<br>~~ES~~<br>~~| fT~~|–––<br>~~ES~~<br>~~SE~~<br>~~fT~~|250<br>~~ES~~<br>~~SE~~<br>~~fT ~~||VDS =44V,VGS =0V,TJ =125°C<br>~~ES~~<br>~~EE~~<br> ~~PO~~|
|IGSS<br>~~tf~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~tf~~<br>~~es~~<br>|–––<br>~~| ~~<br>~~tf~~<br>~~ee~~<br>|–––<br>~~SE~~<br><br>~~tf~~<br>~~ee~~<br>|100<br>~~SE~~<br><br>~~tf~~<br>|nA<br>~~EE~~<br>|VGS =16V<br>~~EE~~<br><br>~~Pe~~|
||Gate-to-Source Reverse Leakage<br>~~tf~~<br>~~es~~<br>|–––<br>~~tf~~<br>~~ee~~<br>|–––<br>~~tf~~<br>~~ee~~<br>|-100<br>~~tf~~<br>||VGS = -16V<br>~~Pe~~|
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge<br>~~es~~<br>~~Rs~~|–––<br>~~ee~~<br>~~Rs~~|10.4<br>~~ee~~<br>~~Rs~~|15.6<br>~~Rs~~|nC|ID= 1.9A<br>VDS= 44V<br>VGS=5.0V, SeeFig.6 and13 <br>~~Pe~~|
|g<br>Qgs<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br>~~es ~~<br>~~Rs~~<br>~~es~~<br>|–––<br> ~~ee ~~<br>~~Rs~~<br>~~es~~<br>~~es~~<br>|1.5<br> ~~ee~~<br>~~Rs~~<br>~~es~~<br>|2.3<br>~~Rs~~<br>~~es~~<br>|||
|Qgd<br><br>~~es~~<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~Rs~~<br>~~es~~<br>|–––<br>~~Rs~~<br>~~es~~<br>~~es~~<br>|5.5<br>~~Rs~~<br>~~es~~<br>|8.3<br>~~Rs~~<br>~~es~~<br>|||
|gd<br>td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-On Delay Time<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>~~es~~<br>|7.4<br>~~es~~<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~<br>|ns|VDD= 28V<br>ID= 1.9A<br>RG= 24<br>RD=15See Fig. 10|
|d(on)<br>tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|RiseTime<br>~~es~~<br>~~**ee**~~<br>|–––<br>~~es~~<br>~~es~~<br>~~**ee**~~<br>~~es~~<br>|21<br>~~es~~<br>~~**ee**~~<br>~~es~~<br>|–––<br>~~es~~<br>~~**ee**~~<br>|||
|td(off)<br><br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-Off DelayTime<br>~~es~~<br>~~**ee**~~<br>|–––<br>~~es~~<br>~~**ee**~~<br>~~es~~<br>|18<br>~~es~~<br>~~**ee**~~<br>~~es~~<br>|–––<br>~~es~~<br>~~**ee**~~<br>|||
|d(off)<br>tf<br><br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Fall Time<br>~~**ee**~~<br>~~**ee**~~<br>|–––<br>~~**ee**~~<br>~~es~~<br>~~**ee**~~<br>~~es~~<br>|25<br>~~**ee**~~<br>~~es~~<br>~~**ee**~~<br>~~ee~~<br>|–––<br>~~**ee**~~<br>~~**ee**~~<br>|||
|Ciss<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~**ee**~~<br><br>|–––<br>~~es~~<br>~~**ee**~~<br>~~es~~<br><br>~~es~~<br>|510<br>~~es~~<br>~~**ee**~~<br>~~ee~~<br><br>|–––<br>~~**ee**~~<br><br>|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5|
|Coss<br><br>~~ee~~<br>~~ee~~<br>~~ee~~|OutputCapacitance<br>~~**ee**~~<br>~~es~~<br>|–––<br>~~**ee**~~<br>~~es~~<br>~~es~~<br>~~es~~<br>|140<br>~~**ee**~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~**ee**~~<br>~~es~~<br>|||
|Crss<br>~~ee~~<br>~~ee~~|ReverseTransferCapacitance<br><br>~~es~~|–––<br>~~es ~~<br><br>~~es~~<br>~~es~~|58<br> ~~ee~~<br><br>~~es~~|–––<br><br>~~es~~|||
|**Source-Drain Ratings and Characteristics**<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~nsIDID(RD(OD~~|||||||
|~~es~~<br>~~$$$~~|**Parameter **<br>~~ns~~<br>~~$$$~~|**Min.**<br>~~ID~~<br>~~$$$~~|**Typ. M**<br>~~ID~~|**. Max.**<br>~~(RD~~|**Units**<br>~~(OD~~|**Conditions**|
|IS<br>~~es~~<br>~~$$$~~|Continuous Source Current<br>(Body Diode)<br>~~ns ~~<br>~~$$$~~|–––<br> ~~ID ~~<br>~~$$$~~|–––<br> ~~ID~~|3.1<br>~~(RD~~|A<br>~~(OD~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM<br>~~$$$~~<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~$$$~~<br>~~nD~~|–––<br>~~$$$~~<br>~~tI~~|–––<br>~~ts~~|12<br>~~ID~~|||
|VSD<br>~~$$$~~<br>~~a~~<br>~~L~~~~**e**~~|Diode Forward Voltage<br>~~$$$~~<br>~~nD~~|–––<br>~~$$$~~<br>~~tI~~|–––<br>~~ts~~|1.0<br>~~ID~~|V<br>~~ee~~|TJ= 25°C,IS= 1.9A,VGS= 0V<br>~~ee~~|
|trr<br>~~a~~<br>~~L~~~~**e**~~<br>~~e~~|Reverse Recovery Time<br>~~nD ~~|–––<br> ~~tI~~|39<br>~~ts ~~|58<br> ~~ID~~|ns  T<br>~~ee~~|ns  TJ= 25°C ,IF= 1.9A<br>nC   di/dt = 100A/µs<br>~~ee~~|
|Qrr<br>~~L~~~~**e**~~<br>~~e~~|Reverse RecoveryCharge|–––|63|94|nC   di/dt = 100A/<br>~~ee~~||



## **Notes:** 

>  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

 starting  TJ = 25°C, L = 25mH, RG = 25, IAS = 3.1A  (See fig. 12) 

>  ISD 1.9A, di/dt 270A/µs, VDD V(BR)DSS, TJ  150°C. 

-  Pulse width 300µs; duty cycle  2%. 

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**----- Start of picture text -----**<br>
 100<br>VGS ass eee<br>TOP 15V<br>10V Lo aS<br>7.0V 0<br>5.5V<br>4.5V HEL 0AA oe |ELT<br>4.0V<br>3.5V<br>BOTTOM 2.7V | |<br>iy em<br> 10 t+—|_+Mm+fYoo (Il<br>a<br>| | MA | Ta TT Ty<br>ey 74 ee 2.7V ll<br>, 20µs PULSE WIDTH TTT<br>T  = 25J °C<br> 1 aye<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
 100<br>————— °<br>;saa| T  = 25  CJ a en [eee]<br>cor T  = 150  CJ °<br>cae<br>72am a<br> 10 KEIy, LL<br>= se SSSS=<br>a ee ee ee ee ee ee ee<br>a 2<br>V      = 25VDS<br>Serpe 20µs PULSE WIDTH<br> 1<br>2 4 6 8 10 12<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 100<br>VGS faa aah<br>TOP 15V<br>10V ieee<br>7.0V eee ee<br>5.5V<br>4.5V ELaeYle)<br>4.0V<br>3.5V<br>BOTTOM 2.7V Ot a 22a<br>in ial<br> 10 -—LAINiZs II<br>eee<br>rT | [lf //{|Zee eel<br>2.7V<br>| | LY eT arti<br>| rf | 20µs PULSE WIDTH ll<br>V  JA T  = 150J °C<br> 1<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
2.0<br>ID = 3.1A<br>LEELA<br>EEE<br>1.5<br>EEE Ee<br>Hf<br>PEELE Ee<br>1.0 PEA DEAA pat SS Cannan<br>LTT EET<br>Ly<br>TALE EEE.<br>0.5<br>PEELE EEE VGS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
1000<br>VGS = 0V, f = 1MHz<br>C iss = C gs + C gd , C      SHORTED ds<br>Crss = Cgd<br>800 SN)7 Coss = Too Cds + Cgd<br>600<br>Ciss<br>eennSel el<br>400 PCE LC OIl<br>Soo<br>Coss<br>200<br>ST<br>Crss<br>Aase EESTIsel<br>0<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.  Typical Capacitance vs.<br>      Drain-to-Source Voltage<br> 100<br>4-4} 4<br> 10<br>_Se S eee0FS Sa S06<br>T  = 150  C J °<br>= —————<br>HAAR<br> 1<br>En 47 4nneee<br>T  = 25  CJ °<br>AISSA V      = 0 V GS<br>0.1<br>0.4 0.6 0.8 1.0 1.2 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
15<br>ID = 1.9A<br>TLLLLLL<br>T<br>COPE Tee<br>12 V DS = 44V<br>VDS = 27V<br>| | tt VDS = 11V ae<br>9<br>PTSane 7400a<br>6 Sann0 7/4000<br>ans /40eee<br>3<br>COLWELL<br>FOR TEST CIRCUIT<br>A cnee SEE FIGURE       13<br>0<br>0 4 8 12 16 20<br>Q   , Total Gate Charge (nC)G<br>Fig 6.  Typical Gate Charge vs.<br>      Gate-to-Source Voltage<br> 100<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>EH)AA<br> 10<br>100us<br>aeAe aesosee Red<br>Seat ematical eal<br>1ms<br>cai ea Catoe<br> 1<br>10ms<br>OB AR<br> T T CJ = 25  C= 150  C° °<br>e  Single Pulse i sti iii<br>0.1 SCSI<br>0.1  1  10  100  1000<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
4.0 TTI<br>3.0<br>CET<br>PARLE EE<br>2.0 PELEPEt TEENYRK EL<br>Pitty tN<br>1.0 PTT ETT ELN<br>0.0 PEELE LETTE<br>25 50 75 100 125 150<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
 1000<br> 100<br>D = 0.50<br>0.20<br>0.10<br> 10<br>- [eer] 0.05 SSaS |<br>P DM<br>0.02<br>0.01 t 1<br> 1<br>t2<br>=eSth, [cciatlli] ea Sell<br>Notes:<br>SINGLE PULSE 1. Duty factor D = t   / t 1 2<br>(THERMAL RESPONSE) 2. Peak T J = P DM x  ZthJA + TA<br>0.1<br>0.00001 Sti [aaalibatii] 0.0001 0.001 0.01 Bit 0.1  1  10  100<br>t  , Rectangular Pulse Duration (sec)1<br>thJA<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
300<br>ID<br>a<br>250 i TOP 1.4A 2.5A<br>BOTTOM 3.1A<br>Aee<br>200 AN es ee ee ee<br>150<br>IN<br>| 100 KX]EREAf  EEft<br>PNA Kf<br>50<br>NaN Eee<br>0<br>25 50 75 100 125 150<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**==> picture [22 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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## **SOT-223 (TO-261AA) Package Outline** (Dimensions are shown in millimeters (inches) 

## **SOT-223(TO-261AA) Part Marking Information** 

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**----- Start of picture text -----**<br>
FL014N<br>a<br>A<br>Date Code<br>Y= Year<br>WW= Work Week<br>A= Automotive, Lead Free<br>**----- End of picture text -----**<br>


2019-01-28 

7 

~~Cinfineon~~ 

IRLL024NTRPbF ~~LLL~~ 

**SOT-223(TO-261AA) Tape and Reel** (Dimensions are shown in millimeters (inches) 

**==> picture [412 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.10 (.161)<br>0.35 (.013)<br>3.90 (.154) 1.85 (.072)<br>0.25 (.010)<br>2.05 (.080) 1.65 (.065)<br>TR 1.95 (.077)<br>7.55 (.297)<br>7.45 (.294)<br>16.30 (.641)<br>7.60 (.299) 15.70 (.619)<br>7.40 (.292)<br>1.60 (.062)<br>1.50 (.059)<br>      TYP.<br>FEED DIRECTION<br>7.10 (.279) 2.30 (.090)<br>6.90 (.272) 2.10 (.083)<br>12.10 (.475)<br>11.90 (.469)<br>**----- End of picture text -----**<br>


**==> picture [30 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES :<br>**----- End of picture text -----**<br>


1. CONTROLLING DIMENSION: MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 

**==> picture [391 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.20 (.519) 15.40 (.607)<br>12.80 (.504) 11.90 (.469)<br>4<br>330.00 50.00 (1.969)<br>(13.000)       MIN.<br>  MAX.<br>NOTES : 18.40 (.724)<br>      MAX.<br>1.   OUTLINE COMFORMS TO EIA-418-1.<br>2.   CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4<br>3.   DIMENSION MEASURED @ HUB. 12.40 (.488)<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

8 

2019-01-28 

## IRLL024NTRPbF ~~Cinfineon LLL~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] MSL1 **Moisture Sensitivity Level** SOT-223 (per JEDEC J-STD-020D)[† ] **RoHS Compliant** Yes ~~——S==—~~ † Applicable version of JEDEC standard at the time of product release (04/27/2004). 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|01/28/2019|<br>Updated datasheet with corporate template.<br><br>Added disclaimer on last page.<br><br>Correctedpart number from”IRLL024NPbF” to “IRLL024NTRPbF”-allpages|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com 

**Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

9 

2019-01-28 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLL024NTRPBF/power-mosfet-n-channel-55-v-31-a-0065-ohm-sot-223)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irll024ntrpbf/mosfet-n-ch-55v-3-1a-sot-223-3/dp/2468048)
---

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