# Power MOSFET, N Channel, 55 V, 28 A, 0.022 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:9102540/)

**URL**: https://novapart.co/products/IRLIZ44NPBF/power-mosfet-n-channel-55-v-28-a-0022-ohm-to-220fp
**SKU**: IRLIZ44NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3570
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 38W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 38W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.022ohm |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 28A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9102540/)

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D<br>Voss = 55V<br>Rpsion) = 0.022 Ω<br>G<br>Ip = 30A<br>S<br>\S IN<br>SS<br>TO-220 FULLPAK<br>**----- End of picture text -----**<br>


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θ<br>Ric<br>θ<br>**----- End of picture text -----**<br>


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[Parameter<br>Viewoss | Min.| Typ.[Max.[Units] Conditions<br>_ | Drainto-Source Breakdown Votage | 68 [——[—— | V [Ves=OV,p=250H4<br>∆<br>Rpsvon) Static Drain-to-Source On-Resistance | ed —— | —— [0.025 | Ω<br>Vestiy sconcete lees —<br>is____| |Transconductance———~«| Gate Threshold Votage ———*«| 1.0 [| 20 | V | Vos=Veslo=250NA<br>va Forward | 21—~ |[— — |——|25]| S| Vps=25V, b=2580<br>loss [aennsesram | Gate-to-Source Forward res Leakage Festa] | --- |---| 100 | esa ssar ae —<br>[Gate-to-Source<br>Gy Reverse Leakage | —— | —|-100<br>[Tastee rage<br>| ee Gate-to-Source Charge «| —— | | 86 | nC | Vos=4av<br>BCRES tajon) | Turn-On Delay Time ae|LEE ——— | 11 Voo = 28V ewe<br>| RiseTime | | 84 Ip = 258<br>Ω,<br>Ω,<br>t FalTme . SS~dSCSC~‘*r‘CSS Ro=1.1 Between lead, See Fig. 10 0@ D<br>G<br>and center of die contact S<br>Cis Input Capacitance —=—=S=«;C | 4700] Ves = OV<br>es [onpat Capactanse Paco op | Vos=25V00<br> ___| Reverse Transfer Capacitance | — | 150 | j= 1.02, See Fig. 58<br>oe a<br>Source-Drain Ratings and Characteristics<br>D<br>Pulsed Source Current integral reverse G<br>Ism (Body Diode) | Showing the Gt S<br>Veo_| Diode Forward Votage «| | | 13 | V | 1)=25°C, lg=17A, Ves= OVO<br>te [Reverse Recovery Time | _——| 80 | 120 [ns | T)=25°C, Ir =25A<br>Qh ——| 210] 320] uC | di/dt = 100A/us ©©<br>ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Lst+Lp)<br>Notes:<br>Repetitive rating; pulse width limited by @® Pulse width ≤  300us; duty cycle  ≤ 2%.<br>max. junction temperature. ( See fig. 11 )<br>Vpp = 15V, starting Ty = 25°C, L = 470uH © t=60s, f=60Hz<br>**----- End of picture text -----**<br>


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Rg=25_ Ω , las= 25A. (See Figure<br>ISD ≤ ≤ ≤<br>≤<br>**----- End of picture text -----**<br>


Uses IRLZ44N data and test conditions 

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1000  TOP           15V ves =F<br>                   12V<br>                   10V<br>                   8.0V<br>                   6.0V 1 re<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V |<br>100 ol et |<br>eyee te/ eee eel el<br>10<br>fz,<br>2.5V<br>At Rett<br> 20µs PULSE WIDTH<br>1 aSnniin n  T   = 25°CJ i<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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1000 = SS SS SS<br>ee<br>ee ee ee ee ee ee eee<br>pf fd<br>T  = 25°CJ<br>100 Sele ——_ase<br>=== T  = 175°CJ ae<br>a= a a<br>Pp A fp<br>10<br>fA | |<br>(2 == SSS SS<br>(ee ee<br>ype | | | | | | | ty ft yt<br> V     = 25VDS<br>1 (neLf cous punse wots<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 Vest<br> TOP           15V<br>                   12V<br>                   10V<br>                   8.0V Aeh<br>                   6.0V<br>                   4.0V<br>                   3.0V th<br> BOTTOM   2.5V<br>100 olA |<br>|<br>ent”RY Z A Ril<br>10 eyZ e 2.5V e<br>bY |<br> 20µs PULSE WIDTH<br>A nningit  T   = 175°CJ<br>1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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3.0<br>PATE<br>2.5 P PE<br>PPT<br>2.0<br>PPT EL et<br>HD OOa<br>1.5 PT EE<br>CER EN Oe OSypce<br>1.0<br>SER ES REDE <a GE ERERRREEEE<br>ODE ca 0<br>0.50.0 TE P vE = tod<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2800 15<br>V      = 0V,         f = 1MHzGS I    = 25AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>2400 C      = Crss         gd<br>— s C      = oss        ds         gdC     + C 12 Se ts<br>2000 St}ee EER SE ae<br>9<br>1600<br>ee ee ll Hf<br>SE Pelt<br>ss<br>1200 Pvc’ | TTT ETT 6 Pt ot) | ywLe |<br>800 NU el J-<br>ss 3<br>SS fene Annee<br>400<br>ES TTT TT<br> FOR TEST CIRCUIT<br>0 eea lll| A 0 Y fit tf STTTTT,     SEE FIGURE 13<br>1 10 100 0 10 20 30 40 50 60 70<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>PPS] fF.<br>po ed<br>100 10µs<br>pf |<br>100 Pf | Lae pP S<br>100µs<br>eee a nS Snnnl N y<br>T  = 175°CJ<br>———— a SH<br>aa 4a 10 S l<br>1ms<br>T  = 25°CJ<br>10 PAwa tt A 1  Single Pulse ceNe 0 e ee 10ms<br>0.4 0.8 1.2 1.6 2.0 2.4 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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35 TTTITTITIITIII Vos Ro<br>30 Pt tT TT TT TT<br>NS Ves bur<br>25 PT ISNT TT TT tt Ro<br>-<br>Pp | tT PT rar ET TT<br>20 Pt tT | dE PAE TT TT<br>Pt | TdT dT TN TT )+ 5.0V ≤ 1<br>15 Pt tT | cd EdTrdT EU NE TT Duty Factor ≤ 0.1 %<br>FEEEEEECEKE :<br>10 rT TELE LELLY Fig 10a. Switching Time Test Circuit<br>5 Pt tT | dT dT dT TT | TA VDSDS<br>Pt | TdT dT dT | rT TT TY 90%<br>0<br>25 Pt 50 ttt} 75 100 te Et 125 tT 150 175 |<br>T   , Case TemperatureC (  C)° |<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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VDSDS<br>90%<br>10%<br>VGS<br>. vl . Lng]<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 10<br>a a<br>D = 0.50<br>S S MMU<br> 1 m e If<br>0.20<br>0.10<br>er ee |<br>0.05<br>ett oH PDM<br>0.1 0.02 eee ae<br>0.01 t1<br>SINGLE PULSE<br>(THERMAL RESPONSE) t2<br>Amen a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>CCI Een FT 2. Peak TJ= P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1  10<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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L<br>VDS<br>ee<br>D.U.T.<br>RG +<br>|<br>- VDD<br>_ IAS<br>en a tp 0.01Ω<br>iL<br>|<br>12a. Unclamped Inductive Test<br>V(BR)DSS<br>t<br>p<br>/ VDD<br>/ /<br>VDS / /<br>( \<br>IAS<br>**----- End of picture text -----**<br>


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QG<br>A QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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500<br>                    ID<br>GER TOP            10A<br>                   17A<br>400 BOTTOM    25A<br>Nene<br>BNEEEEEE<br>300<br>PpNoP<br>KIX<br>200 NEN<br>PNINOING Pf |<br>100<br>Beh ~NONE Eee<br>PSST<br> V      = 25V pS DD<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>|<br>50KΩ<br>12V .2µF<br>.3µF<br>7 mcr<br>+<br>LLit D.U.T. -VDS<br>VGS<br>3mA<br>Or].<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent es ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## TO-220 Full-Pak Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-220 Full-Pak Part Marking Information 

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E XAMP L E : T H IS  IS  AN  IR F I8 40G<br>W IT H  AS S E MB L Y  P AR T  N U M B E R<br>L OT  CODE  3 432 IN T E R N AT IONAL<br>AS S E M B L E D ON  W W  24 199 9 R E CT IF IE R IR F I8 40G<br>IN T H E  AS S E MB L Y L IN E  "K " L OGO 924 K<br>Note: position indicates "Lead-Free"  "P" in assembly line AS S E M B L Y  34          32 DAT E  CODEYE AR  9 =  199 9<br>L OT  CODE WE E K  24<br>L IN E  K<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irliz44npbf/mosfet-n-logic-fullpak/dp/9102540)
---

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