# Power MOSFET, N Channel, 55 V, 19 A, 0.05 ohm, TO-220FP, Through Hole

![Product image](https://novapart.co/image/farnell:9933859/)

**URL**: https://novapart.co/products/IRLIB4343PBF/power-mosfet-n-channel-55-v-19-a-005-ohm-to-220fp
**SKU**: IRLIB4343PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7080
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipat

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2015) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 39W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220FP |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 19A |
| Drain Source On State Resistance | 0.05ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9933859/)

## IRLIB4343PbF 

## **Features** 

Advanced Process Technology 

- Key Parameters Optimized for Class-D Audio Amplifier Applications 

- Low RDSON for Improved Efficiency 

- Low Qg and Qsw for Better THD and Improved Efficiency 

- Low Qrr for Better THD and Lower EMI 

- 175°C Operating Junction Temperature for Ruggedness 

- Repetitive Avalanche Capability for Robustness and Reliability 

- Lead-Free 

||**Key Parameters**|**Key Parameters**|**Key Parameters**||
|---|---|---|---|---|
|VDS<br>RDS(ON)typ. @ V<br>RDS(ON)typ. @ V<br>Qgtyp.<br>TJmax|55<br>V<br>typ. @ VGS= 10V<br>42<br>m<br>typ. @ VGS= 4.5V<br>57<br>m<br>28<br>nC<br>175<br>°C<br>~~ee~~<br>~~ee oe~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||||
|||D|||
||G||||
|||S|TO-220 Full-Pak||



## **Description** 

This Digital Audio HEXFET[®] is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications. 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~a~~<br>~~dH~~|55<br>~~a~~<br>~~dH~~|V<br>~~dH~~<br>~~ee~~|
|VGS|Gate-to-Source Voltage<br>~~dH~~<br>~~ee~~|±20<br>~~dH~~<br>~~ee~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~dH~~<br>~~a~~<br>~~ee~~|19<br>~~dH~~<br>~~a~~<br>~~ee~~|A<br>~~dH~~<br>~~ee~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~ON.~~<br>~~ee~~|13<br>~~ON.~~<br>~~ee~~||
|IDM|Pulsed Drain Current<br>~~ee~~|80<br>~~ee~~||
|PD@TC= 25°C|Power Dissipation<br>~~ee~~<br>~~a~~<br>~~ee~~|39<br>~~ee~~<br>~~a~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~|
|PD@TC= 100°C|Power Dissipation<br>~~ee~~|20<br>~~ee~~||
||Linear DeratingFactor<br>~~ee~~|0.26<br>~~ee~~<br>~~ee~~|W/°C<br>~~ee~~<br>~~ee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-40  to + 175<br>~~ee~~<br>~~ee~~<br>~~I~~|°C<br>~~ee~~<br>~~ee~~|
||Mountingtorque,6-32  or M3  screw<br>~~ee~~<br>~~nN~~|10lb n(1.1N m)<br>~~ee~~<br>~~ee ~~<br>~~nN~~<br>~~I~~|~~ee~~<br> ~~ee~~<br>~~nN~~|



Notes 0) hrough © are on page 7 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|55|–––|–––|V|VGS= 0V, ID= 250µA|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ee ee~~|15<br>~~ee~~|–––<br>~~ee~~|mV/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~eee~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee ee~~|42<br>~~a~~<br>~~ee~~|50<br>~~a~~<br>~~ee~~|mΩ<br>~~a~~<br>~~ee~~|VGS= 10V, ID= 4.7A<br>~~a~~<br>~~eee~~|
|||–––<br>~~a~~<br>~~ee ee~~|57<br>~~a~~<br>~~ee~~|65<br>~~a~~<br>~~ee~~||VGS= 4.5V, ID= 3.8A<br>~~a~~<br>~~eee~~|
|VGS(th)|Gate Threshold Voltage<br>~~a~~<br>~~ee~~|1.0<br>~~a~~<br>~~ee ee~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~a~~<br>~~eee~~<br>~~eee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~ee~~|–––<br>~~ee ee~~<br>~~ee~~|-4.4<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~|mV/°C<br>~~ee~~<br>~~a eee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~ee~~|–––<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.0<br>~~ee~~<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~ee~~<br>~~a eee~~|VDS= 55V, VGS= 0V<br>~~eee~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~eee~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~ey~~|–––<br>~~ee~~<br>~~ee ~~<br>~~ey~~<br>~~a~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~ey~~<br>~~ee~~|100<br>~~ee~~<br> ~~eee ~~<br>~~ey~~<br>~~ee~~|nA<br>~~ee~~<br> ~~a eee~~<br>~~ey~~<br>~~ee~~|VGS= 20V<br>~~ee~~<br>~~eee~~<br>~~ey~~|
||Gate-to-Source Reverse Leakage<br>~~ey~~|–––<br>~~ey~~<br>~~a~~|–––<br>~~ey~~<br>~~ee~~<br>~~I~~|-100<br>~~ey~~<br>~~ee~~<br>~~I~~||VGS= -20V<br>~~ey~~|
|gfs|Forward Transconductance<br>~~ey~~<br>~~I~~|8.8<br>~~ey~~<br>~~a~~<br>~~I~~|–––<br>~~ey~~<br>~~ee~~<br>~~I~~<br>~~I~~|–––<br>~~ey~~<br>~~ee~~<br>~~I~~<br>~~I~~|S<br>~~ey~~<br>~~ee~~<br>~~I~~|VDS= 25V, ID= 19A<br>~~ey~~<br>~~I~~|
|Qg|Total Gate Charge<br>~~I~~<br>~~ee~~|–––<br>~~I~~<br>~~ee~~|28<br>~~I~~<br>~~I~~<br>~~ee~~|42<br>~~I~~<br>~~I~~<br>~~ee~~|~~I~~|VGS= 10V<br>ID= 19A<br>See Fig. 6 and 19<br>VDS= 44V<br>~~I~~<br>@|
|Qgs|Pre-Vth Gate-to-Source Charge|–––<br>~~Ge~~|3.5|–––|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~Ge~~<br>~~**Ge**~~|9.5<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~<br>~~ee~~|–––<br>~~Ge~~<br>~~ee~~<br>~~**Ge**~~|15<br>~~ee~~|–––<br>~~ee~~|||
|td(on)|Turn-On DelayTime<br>~~ee~~|–––<br>~~**Ge**~~|5.7|–––|ns|VDD= 28V, VGS= 10V<br>ID= 19A<br>RG= 2.5Ω<br>@|
|tr|Rise Time<br>~~ee~~|–––<br>~~**Ge**~~<br>~~Ge~~|19|–––|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~Ge~~<br>~~Ge~~|23<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~Ge~~<br>~~ee~~<br>~~Ge~~<br>~~Ge~~|5.3<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~Ge~~<br>~~ee~~<br>~~Ge~~|740<br>~~ee~~|–––<br>~~ee~~|pF<br>~~Ff)~~|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz,          See Fig.5|
|Coss|Output Capacitance|–––<br>~~Ge~~<br>~~Ge~~|150|–––|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~Ge~~<br>~~Ge~~|59<br>~~ee~~<br>~~Ge~~|–––<br>~~ee~~|||
|Coss|Effective Output Capacitance<br>~~ee~~<br>~~Ff)~~|–––<br>~~Ge~~<br>~~ee~~<br>~~Ge~~<br>~~Ff)~~|250<br>~~ee~~<br>~~Ge~~<br>~~Ff)~~|–––<br>~~ee~~<br>~~Ff)~~||VGS= 0V, VDS= 0V to -44V<br>~~Ff)~~|
|LD|Internal Drain Inductance<br>~~ee~~<br>~~Ff)~~|–––<br>~~ee~~<br>~~Ge ~~<br>~~Ff)~~|4.5<br>~~ee~~<br> ~~Ge~~<br>~~Ff)~~|–––<br>~~ee~~<br>~~Ff)~~|nH<br>~~Ff)~~|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~Ff)~~|
|LS|Internal Source Inductance<br>~~Ff)~~<br>~~Pe~~|–––<br>~~Ff)~~<br>~~Pe~~|7.5<br>~~Ff)~~<br>~~Pe~~|–––<br>~~Ff)~~<br>~~Pe~~|||



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS@ TC= 25°C|Continuous Source Current<br>(BodyDiode)|–––|–––|19|A|S<br>D<br>G<br>p-njunction diode.<br>showing  the<br>integral reverse<br>MOSFET symbol|
|ISM<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~Pow~~<br>~~a~~<br>~~(~~|–––<br>~~Pow~~<br>~~(~~|–––<br>~~Pow~~|110<br>~~Pow~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~Pow~~<br>~~a~~<br>~~(~~<br>~~**e**~~|–––<br>~~Pow~~<br>~~(~~<br>~~**e**~~|–––<br>~~Pow~~<br>~~**e**e~~|1.2<br>~~Pow~~<br>~~e~~|V<br>~~e~~|TJ= 25°C, IS= 19A, VGS= 0V<br>~~e~~|
|trr<br>~~a~~|Reverse RecoveryTime<br>~~a~~<br>~~(~~<br>~~**e**~~<br>~~s~~|–––<br>~~(~~<br>~~**e**~~<br>~~es~~|52<br>~~**e**e~~|78<br>~~e~~|ns<br>~~e~~|TJ= 25°C, IF= 19A<br>di/dt = 100A/µs<br>~~e~~<br>~~©)~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**~~<br>~~s~~|–––<br>~~**e**~~<br>~~es~~|100<br>~~**e**e~~|150<br>~~e~~|nC<br>~~e~~||



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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>4.5V<br>100 3.5V<br>3.0V<br>2.5V<br>BOTTOM 2.3V<br>10<br>1 2.3V<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.1 EELHIE Luu LLU<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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1000.0<br>T = 25°C<br>100.0 = = J<br>jf<br>T = 175°C<br>J<br>a a a<br>10.0<br>1.0<br>—## |_| _}<br>VDS = 30V<br>=<br>≤ 60µs PULSE WIDTH<br>0.1 i<br>0 2 4 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>— oss   ds  gd<br>1000 Ciss<br>Se Coss eee<br>en h eee<br>Crss<br>100<br>a<br>a P t atT TP ET<br>P Ei<br>10<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>4.5V<br>100 3.5V<br>3.0V<br>2.5V<br>BOTTOM 2.3V<br>10<br>2.3V<br>1<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>0.1 FELT bua LLU<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.5<br>ID = 19A<br>VGS = 10V<br>“T TT<br>2.0 Littl<br>PETE LLL LZ<br>1.5<br>1.0<br>Saney4eeeeee<br>PLL<br>TELE<br>0.5<br>TTT TEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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20<br>ID= 19A<br>VDS= 44V<br>16 VDS= 28V<br>pe VDS= 11V ——_<br>12<br>ea<br>8 Aan<br>| | GF | |<br>4 | f_ |i FOR TEST CIRCUIT<br>SEE FIGURE 19<br>0 /+—- | |<br>0 10 20 30 40<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000.0<br>100.0<br>PP T = 175°C eer<br>J  |mie<br>4 | | | 4<br>10.0 e e<br>ee<br>ae eee<br>a<br>1.0<br>TJ = 25°C<br>i ee eee eee VGS = 0V<br>0.1 Pe<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>WA<br>100<br>peaeM | UII<br>a ee ee r te alEl<br>Sachi<br>100µsec<br>et a<br>C AA<br>10 RN<br>SE | |<br>1msec<br>Tc = 25°C<br>Tj = 175°C 10msec<br>Single Pulse<br>a Con<br>1<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.0<br>1.5<br>ID = 250µA<br>1.0<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>D = 0.50<br>1 I Serra TT<br>0.20<br>0.10<br>0.1 S Sa ome 0.020.010.05 ernie?eeThA20"| teethos τJ τJτ1τ1 at R1 t R1 τ2 τR22 R2 e t Rτ33Rτ33 τCτRi (°C/W)    oti) 1.0096     0.0010900.9019     0.038534 τi (sec) ec)<br>Se eeEeee Ci=  T τi/Ri T T rid 1.9296     2.473000 HlMl<br>Ci i/Ri<br>0.01<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>PA tl<br>ALL TT P P 2. Peak Tj = P dm x Zthjc + Tc ll<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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Wet sdie IRLIB4343PbF<br>200 600<br>ID = 19A ID<br>TOP         2.7A<br>500<br>3.3A<br>150<br>BOTTOM 13A<br>400<br>py \<br>100 | | C C<br>300<br>T = 125°C<br>J  200<br>50<br>R T N CCT<br>100<br>T = 25°C<br>J<br>0<br>LTP RRS I<br>2.0 4.0 6.0 8.0 10.0 0<br>CPE |= A<br>25 50 75 100 125 150 175<br>VGS, Gate-to-Source Voltage (V)<br>Starting TJ , Junction Temperature (°C)<br>Fig 12.    On-Resistance Vs. Gate Voltage Fig 13.   Maximum Avalanche Energy Vs. Drain Current<br>1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>0.01 avalanche losses<br>10<br>0.05<br>0.10<br>1<br>a a ee ee ee<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>tav (sec)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>)Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 14.** Typical Avalanche Current Vs.Pulsewidth 

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200<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>ID = 13A<br>150<br>N e<br>E NN<br>100<br>CP  UINSNEEEEE<br>T PN<br>50<br>P LTSNUEE<br>C OONS<br>SERERRREANNS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a 

- temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆T = Allowable rise in junction temperature, not to exceed 

- Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC** 

**Iav = 2 T/ [1.3·BV·Zth]** 

**Fig 15.** Maximum Avalanche Energy Vs. Temperature 

**EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + Period — D = ——<br>+ P.W. Period<br>) [©)] Circuit    •  Low LayoutStray ConsiderationsInduct ] V it GS=10V<br> •<br>-  •   Low Leakage Inductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oH - [l] Current Transformer - ® + Current r Current di/dt AN<br>©) D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 + VDD<br>•  Re-Applied<br>Re •   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop av<br>( 4 •   vidt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @ t<br>* Vos = 5V for Logic Level Devices<br>Fig 16. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>15V<br>LD<br>VDS<br>VDS L DRIVER +<br>VDD -<br>RG D.U.T +<br>IAS - [V][DD] A D.U.T<br>20VVGS = tp 0.01Ω VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br> Unclamped Inductive Test Circuit<br>Fig 18a.   Switching Time Test Circuit<br>V(BR)DSS(BR)DSS<br>V<br>tp DS |<br>90%<br>10%<br>V<br>GS<br>yo<br>td(on) tr td(off) tf<br> Unclamped Inductive Waveforms Fig 18b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>Vgs(th)<br>1K<br>a: Qgs1 e e! Qgs2 i Qgd ' Qgodr !<br>**----- End of picture text -----**<br>


**Fig 17a.** Unclamped Inductive Test Circuit 

**==> picture [163 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS(BR)DSS<br>tp<br>yo<br>IAS<br>**----- End of picture text -----**<br>


**Fig 17b.** Unclamped Inductive Waveforms 

**==> picture [187 x 109] intentionally omitted <==**

**----- Start of picture text -----**<br>
L<br>VCC<br>DUT<br>0<br>1K<br>a:<br>**----- End of picture text -----**<br>


**Fig 19b** Gate Charge Waveform 

**Fig 19a.** Gate Charge Test Circuit 

www.irf.com 

6 

## TO-220 Full-Pak Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-220 Full-Pak Part Marking Information 

**==> picture [372 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
E XAMPL E : T H IS  IS  AN IR F I840G<br>WIT H  AS S E MB L Y<br>PAR T  NU MB E R<br>L OT  CODE  3432 INT E R NAT IONAL<br>AS S E MB L E D ON WW 24 1999 R E CT IF IE R IRF I840G<br>IN T H E  AS S E MB L Y L INE  "K " L OGO 924K<br> 34         32 DAT E  CODE<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" AS S E MB L Y YE AR  9 =  1999<br>L OT  CODE WE E K  24<br>L INE  K<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.5mH, RG = 25Ω, IAS = 13A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Rθ is measured at TJ of approximately 90°C. 

Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information. 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/04 

www.irf.com 

7 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irlib4343pbf/mosfet-n-to-220-isol/dp/9933859)
---

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