# Power MOSFET, N Channel, 30 V, 21 A, 3200 µohm, QFN, Surface Mount

![Product image](https://novapart.co/image/farnell:1857349/)

**URL**: https://novapart.co/products/IRLHM630TRPBF/power-mosfet-n-channel-30-v-21-a-3200-ohm-qfn
**SKU**: IRLHM630TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2650
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.7W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | QFN |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 21A |
| Drain Source On State Resistance | 3200µohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1857349/)

IRLHM630PbF ~~a~~ 

## ~~T&R Rectitier~~ 

## HEXFET[® ] Power MOSFET 

|**VDSS**|**30**|**V**|
|---|---|---|
|**VGS**|±**12**|**V**|
|**RDS(on)max**<br>(@VGS= 4.5V)|**3.5**|**m**|
|(@VGS= 2.5V)|**4.5**||
|**Qg (typical)**|**41**|**nC**|
|**ID**<br>**(@TC (Bottom) = 25°C)**|**40**|**A**|



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PQFN 3.3 x 3.3 mm<br>**----- End of picture text -----**<br>


## **Applications** 

-  Battery Operated DC Motor Inverter MOSFET 

-  Secondary Side Synchronous Rectification MOSFET 

## **Benefits** 

## **Features** 

Low RDSon (< 3.5m) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal dissipation Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability 

MSL1, Industrial Qualification 

~~Pe~~ **Standard Pack Orderable part number Package Type Note** ~~EE~~ **Form Quantity** IRLHM630TRPbF PQFN 3.3mm x 3.3mm Tape and Reel 4000 ~~rs ee IRLHM630TR2PBF PQFN 3.3mm x 3.3mm Tape and Reel Te 400~~ EOL n ~~eee~~ otice # 259 **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|30|V|
|VGS|Gate-to-Source Voltage|± 12||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V|21|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 4.5V|17||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 4.5V|40||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 4.5V|40||
|IDM|Pulsed Drain Current|160||
|PD@TA= 25°C|Power Dissipation|2.7|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|37||
||Linear Derating Factor|0.022|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

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IRLHM630PbF ~~[~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~a ee~~<br>~~es~~|**Parameter**<br>~~ee~~<br>|**Min.**<br>~~ee~~<br>~~GQ~~<br>|**Typ. **<br>~~ee~~<br>~~GQ~~<br>|**Max.**<br>~~ee~~<br>~~GQ~~<br>|**Units**<br>~~ee~~<br>|**Conditions**<br>~~ee~~<br>|
|---|---|---|---|---|---|---|
|BVDSS<br>~~esG~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~G~~<br>|30<br>~~GQ~~<br>~~G~~<br>|–––<br>~~GQ~~<br>~~G~~~~**O**~~<br>|–––<br>~~GQ~~<br>~~**O**~~|V<br>~~**O**~~|VGS= 0V,ID= 250µA<br>~~**O**~~|
|BVDSS/TJ<br>~~esG~~<br>~~esQ~~|Breakdown Voltage Temp. Coefficient<br>~~G~~<br>~~Q~~|–––<br>~~GQ~~<br>~~G~~<br>~~Q~~<br>~~ee~~|2.1<br>~~GQ~~<br>~~G~~~~**O**~~<br>~~Q~~|–––<br>~~GQ~~<br>~~**O**~~|mV/°C Reference to 25°C<br>~~**O**~~|mV/°C Reference to 25°C,ID= 1mA<br>~~**O**~~<br>~~PC~~|
|RDS(on)<br>~~G~~<br>~~esQ~~<br>~~Ne~~|Static Drain-to-Source On-Resistance<br>~~G~~<br>~~Q~~<br>~~Ne~~|–––<br>~~G~~<br>~~Q~~<br>~~ee~~<br>~~ee~~|2.2<br>~~G~~~~**O**~~<br>~~Q~~<br>~~ee~~|3.2<br>~~**O**~~|m<br>~~**O**~~<br>|VGS= 10V,ID= 20A<br>~~**O**~~<br>~~PC~~<br>~~Po~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.5<br>~~ee~~<br>~~ee~~|3.5<br>~~eee~~||VGS= 4.5V,ID= 20A<br>~~PC~~<br>~~Po~~<br>~~|~~|
|||–––<br>~~ee ~~<br>~~ee~~|3.5<br> ~~ee~~<br>~~ee~~|4.5<br>~~eee~~||VGS= 2.5V,ID= 20A<br>~~Po~~<br>~~|~~|
|VGS(th)<br>~~Ne~~<br>~~es~~|Gate Threshold Voltage<br>~~Ne~~<br>|0.5<br>~~ee ~~<br>|0.8<br> ~~ee ~~<br>~~ne~~<br>|1.1<br> ~~eee ~~<br>~~ne~~<br>|V<br> <br>~~ne~~<br>|VDS= VGS, ID= 50µA<br> ~~|~~<br>|
|VGS(th)<br>~~es~~|Gate Threshold Voltage Coefficient<br>|–––<br>|-3.8<br>~~ne~~<br>|–––<br>~~ne~~<br>|mV/°C<br>~~ne~~<br>||
|GS(th)<br>IDSS<br>~~es—~~<br>~~Bf~~|Drain-to-Source Leakage Current<br>~~—~~<br>~~Bf~~|–––<br>~~—~~<br>~~ee~~|–––<br>~~ne~~<br>~~—~~<br>~~ee~~|1<br>~~ne~~<br>~~—~~|µA<br>~~ne~~<br>~~—~~|VDS= 24V,VGS= 0V<br>~~—~~|
|||–––<br>~~—~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~|150<br>~~—~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~—~~|
|IGSS<br>~~—~~<br>~~Bf~~<br>~~ee~~<br>~~a~~<br>~~re~~|Gate-to-Source Forward Leakage<br>~~—~~<br>~~Bf~~<br>~~ee ee~~<br>|–––<br>~~—~~<br>~~ee~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~<br>~~es~~|100<br>~~—~~|nA<br>~~—~~|VGS= 12V<br>~~—~~|
||Gate-to-Source Reverse Leakage<br>~~Bf~~<br>~~ee ee~~<br>~~er~~<br>|–––<br>~~ee~~<br>~~ee~~<br>~~GQ~~<br>|–––<br>~~ee~~<br>~~es~~<br>~~GQ~~<br>|-100<br>~~GQ~~<br>||VGS= - 12V|
|gfs<br>~~Bf~~<br>~~ee~~<br>~~a ~~<br>~~re~~|Forward Transconductance<br>~~Bf~~<br>~~ee ee~~<br> ~~er~~<br>|140<br>~~ee ~~<br>~~ee ~~<br>~~GQ~~<br>|–––<br> ~~ee~~<br> ~~es~~<br>~~GQ~~<br>|–––<br>~~GQ~~<br>|S|VDS= 10V,ID= 20A|
|Qg<br> <br>~~reee~~<br>~~ee~~|Total Gate Charge<br> ~~er~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ee~~|41<br>~~GQ~~<br>~~ee~~|62<br>~~GQ~~<br>~~ee~~|nC<br>~~QQ~~|VDS= 15V<br>VGS= 4.5V<br>ID= 20A(See Fig.17 & 18)<br>~~QQ~~|
|Qgs<br> <br>~~reee~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Charge<br> ~~er~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ee~~|4.6<br>~~GQ~~<br>~~ee~~|–––<br>~~GQ~~<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~esQQ~~|Gate-to-Drain Charge<br>~~ee~~<br>~~QQ~~|–––<br>~~ee~~<br>~~QQ~~|14<br>~~ee~~<br>~~QQ~~|–––<br>~~ee~~<br>~~QQ~~|||
|RG<br>~~ee~~<br>~~esQQ~~|Gate Resistance<br>~~QQ~~|–––<br>~~QQ~~|2.6<br>~~QQ~~|–––<br>~~QQ~~|<br>~~QQ~~|~~QQ~~|
|td(on)<br>~~esQQ~~<br>~~a~~<br>~~re~~|Turn-On DelayTime<br>~~QQ~~|–––<br>~~QQ~~|9.1<br>~~QQ~~|–––<br>~~QQ~~|ns<br>~~QQ~~|VDD= 10V, VGS= 4.5V<br>ID= 20A<br>RG= 1.0<br>See Fig.15<br>~~QQ~~|
|tr<br>~~re~~<br>~~ee~~|Rise Time|–––|32|–––|||
|td(off)<br>~~re~~<br>~~ee~~<br>~~ee~~|Turn-Off DelayTime|–––|65|–––|||
|tf<br>~~ee~~<br>~~ee~~<br>~~ee~~|Fall Time|–––|43|–––|||
|Ciss<br>~~ee~~<br>~~ee~~|Input Capacitance|–––|3170|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss<br>~~ee~~<br>~~ee~~<br>~~rs~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|330<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~rs~~|Reverse Transfer Capacitance|–––|250|–––|||



## **Avalanche Characteristics** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|–––|80|mJ|
|IAR|Avalanche Current|–––|20|A|



||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)|–––|–––|40|A|D<br>S<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM<br>~~po~~|(odyode)<br>Pulsed Source Current<br>(Body Diode)<br>~~po~~|–––|–––|160|||
|VSD<br>~~|~~<br>~~pf~~|Diode Forward Voltage<br>~~|~~<br>~~pf—__________}+~~|–––<br>~~|~~<br>~~—__________}+~~|–––<br>~~|~~<br>~~—__________}+ ++~~|1.2<br>~~|~~<br>~~++~~|V<br>~~|~~<br>~~++~~|TJ =25°C, IS =20A, VGS =0V<br>~~|~~<br>~~++~~|
|trr<br>~~pf~~<br>~~ee~~|Reverse Recovery Time<br>~~pf—__________}+~~<br>~~eees~~|–––<br>~~—__________}+~~<br>~~es~~|20<br>~~—__________}+ ++~~<br>~~es~~|30<br>~~++~~<br>~~es~~|ns<br>~~++~~<br>~~es~~|TJ= 25°C, IF= 20A, VDD= 15V<br>di/dt=400A/µs<br>~~++~~|
|Qrr<br>~~pf~~<br>~~ee~~|Reverse Recovery Charge<br>~~pf—__________}+~~<br>~~eees~~|–––<br>~~—__________}+~~<br>~~es~~|30<br>~~—__________}+ ++~~<br>~~es~~|45<br>~~++~~<br>~~es~~|nC<br>~~++~~<br>~~es~~||



## **Thermal Resistance** 

||**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJC (Bottom)|Junction-to-Case|–––|3.4|°C/W|
|RJC (Top)|Junction-to-Case|–––|37||
|RJA|Junction-to-Ambient|–––|46||
|RJA (<10s)|Junction-to-Ambient|–––|31||



2 

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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>4.5V 4.5V<br>3.5V 3.5V<br>100 2.5V 2.0V 2.5V2.0V<br>1.6V 1.6V<br>1.5V 100 1.5V<br>BOTTOM 1.3V BOTTOM 1.3V<br>10<br>71 5<br>10<br>1.3V<br>1 1.3V<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>0.1 = Tj = 25°C 1 Z Tj = 150°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>1000 1.8<br>ID = 20A<br>1.6 V GS  = 4.5V<br>100 TE] 1.4 (ae<br>[- nnn<br>TJ = 150°C<br>1.2<br>10 wi/ T J  = 25°C  = EALal<br>1.0<br>VDS = 15V 0.8 eA<br>60µs PULSE WIDTH<br>1.0 // CePeE EEL<br>0.6 ALLELE LLL<br>1.0 1.5 2.0 2.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VCC C GS  iss rss    = C = 0V,       f = 1 MHZiss rss    = C = 0V,       f = 1 MHZrss    = C = 0V,       f = 1 MHZ  = C gs gd + Cgd,  Cds SHORTEDgd + Cgd,  Cds SHORTED 12 ID= 20A V V DSDS= 24V = 15V<br>Coss  oss   = Cds + Cgdds + Cgd+ Cgdgd VDS= 6.0V<br>10<br>10000<br>ee eel 0 fh<br>8<br>Cississ<br>6<br>1000 C oss<br>C Ta rss 4 fo<br>2<br>Tu 0 -AEEEE<br>100<br>Hii naa<br>0 20 40 60 80 100 120<br>1 10 100<br> QG  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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100000<br>VCC   = C = 0V,       f = 1 MHZ = 0V,       f = 1 MHZ+ Cgd,  Cds SHORTEDgd,  Cds SHORTED,  Cds SHORTEDds SHORTEDSHORTED<br>C GS  iss rss    = C = 0V,       f = 1 MHZiss rss    = C = 0V,       f = 1 MHZrss    = C = 0V,       f = 1 MHZ  = C gs gd + Cgd,  Cds SHORTEDgd + Cgd,  Cds SHORTED<br>Coss  oss   = Cds + Cgdds + Cgd+ Cgdgd<br>10000<br>ee eel<br>Cississ<br>1000 C oss<br>C Ta rss<br>Tu<br>100<br>Hii<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>100<br>TJ = 150°C<br>10 100µsec<br>10 TJ = 25°C 1msec<br>D C<br>1<br>Tc = 25°C 10msec<br>Tj = 150°C<br>V GS  = 0V Single Pulse<br>1.0<br>0.1<br>Al AN<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>80 1.4<br>LIMITED BY PACKAGE<br>1.2<br>S| ASE<br>60<br>1.0<br>Vaa ESNSSGREEE<br>0.8<br>Z| PSS<br>40<br>0.6<br>. ID = 50µA PRES<br>0.4 I D  = 250µA<br>20 ERAN ID = 1.0mA OOPS<br>0.2 ID = 10mA<br>PEE LAH<br>0 0.0 PEL LE<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC,  Case Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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80<br>LIMITED BY PACKAGE<br>S|<br>60<br>Vaa<br>Z|<br>40<br>.<br>20 ERAN<br>PEE<br>0<br>25 50 75 100 125 150<br> TC,  Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage Vs. Temperature 

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10<br>D = 0.50 WEEE<br>1<br>0.20<br>eT aati ntl<br>0.10<br>0.05<br>seatieeee oot MAUL OU mM<br>0.1 0.02<br>0.01<br>sii all I BIBB<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>STM<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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12<br>11 I D  = 20A<br>10<br>9 Pe | [| tl lt<br>8<br>7<br>a<br>6<br>PW | [| TJ = 125°C | [ ]<br>5<br>PINE<br>4<br>3<br>P {het TJ = 25°C |<br>2<br>0 2 4 6 8 10 12<br>VGS, Gate -to -Source Voltage  (V)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On– Resistance vs. Gate Voltage 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

**Fig 15a.** Switching Time Test Circuit 

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IRLHM630PbF<br>[<br>350<br>ID<br>300 TOP         5.8A<br>11A<br>250 | BOTTOM 20A<br>200 CONCCEELET<br>150<br>SHA<br>100 NIN EE<br>50<br>| NS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15b.** Switching Time Waveforms 

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**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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Id<br>Vds<br>Vgs<br>Vgs(th) !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Test Circuit 

**Fig 18.** Gate Charge Waveform 

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## **PQFN 3.3 x 3.3 Outline “B” Package Details** 

## **PQFN 3.3 x 3.3 Outline “G” Package Details** 

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8 7 6 5<br>#1 2 3 4<br>#1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

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## **PQFN 3.3 x 3.3 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>Ne<br>DATE CODE<br>—!<br>XXXX PART NUMBER<br>ASSEMBLY ~<br>SITE CODE ~ ~ ?YWW? —_ MARKING CODE<br>(Per Marking Spec)<br>(Per SCOP 200-002) XXXXX<br>**----- End of picture text -----**<br>


## LOT CODE 

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PIN 1<br>IDENTIFIER<br>**----- End of picture text -----**<br>


(Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **PQFN 3.3 x 3.3 Tape and Reel** 

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**----- Start of picture text -----**<br>
REEL DIMENSIONS TAPE DIMENSIONS<br>DIMENSION (MM) DIMENSION (INCH)<br>CODE MIN MAX MIN MAX<br>Ao 3.50 3.70 .138 .146<br>Bo 3.50 3.70 .138 .146<br>Ko 1.10 1.30 .043 .051<br>P1 7.90 8.10 .311 .319<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  W 11.80 12.20 .465 .480<br>W1 12.30 12.50 .484 .492<br>Qty 4000<br>Reel Diameter 13   Inches<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

Submit Datasheet Feedback September 25, 2015 

www.irf.com © 2015 International Rectifier 

~~TOR Rectifier~~ 

IRLHM630PbF ~~[~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 3.3mm x 3.3mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- 

- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-   Repetitive rating;  pulse width limited by max. junction temperature. 

-    Starting TJ = 25°C, L = 0.59mH, RG = 50, IAS = 12A. 

-  Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

-   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-  Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability. 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|1/14/2014|Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #259)<br>Updated data sheetwith new IRcorporate template|
|5/29/2015|Added Rdson  typical ="1.5m", Max = "2.2m" @ VGS=10V,ID=20A on page 2.<br>Updated Rdson typical from "2m" to "1.8m" @ VGS=4.5V,ID=20A on page 2.<br>Updated package outline and tape andReelonpage7& 8.|
|9/25/2015|Updated package outline to reflect the PCN # (67-PCN90-Public-R2) for “option B” and added<br>package outline for “option G” on page 7<br>Updated "IFX" logo on all pages.<br>Corrected typo for“Gate Charge, Switch time & trr”test condition on page 2.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

9 

Submit Datasheet Feedback September 25, 2015 

www.irf.com © 2015 International Rectifier 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLHM630TRPBF/power-mosfet-n-channel-30-v-21-a-3200-ohm-qfn)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlhm630trpbf/mosfet-n-ch-diode-30v-21a-pqfn33/dp/1857349)
---

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