# Power MOSFET, N Channel, 20 V, 40 A, 2200 µohm, PQFN, Surface Mount

![Product image](https://novapart.co/image/farnell:3155155/)

**URL**: https://novapart.co/products/IRLHM620TRPBF/power-mosfet-n-channel-20-v-40-a-2200-ohm-pqfn
**SKU**: IRLHM620TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2770
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:80

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 37W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | PQFN |
| Drain Source Voltage Vds | 20V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 2200µohm |
| Gate Source Threshold Voltage Max | 800mV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155155/)

## ~~T&R Rectitier~~ 

## IRLHM620PbF ~~oo~~ 

## HEXFET[® ] Power MOSFET 

|**VDSS**|**20**|**V**|
|---|---|---|
|**VGS**|±**12**|**V**|
|**RDS(on)max**<br>(@VGS= 4.5V)|**2.5**|**m**|
|(@VGS= 2.5V)|**3.5**||
|**Qg (typical)**|**52**|**nC**|
|**ID**<br>**(@TC (Bottom) = 25°C)**|**40**|**A**|



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PQFN 3.3 x 3.3 mm<br>**----- End of picture text -----**<br>


## **Applications** 

-  Battery Operated DC Motor Inverter MOSFET 

-  Secondary Side Synchronous Rectification MOSFET 

## **Benefits** 

## **Features** 

Low RDSon (< 2.5m) Lower Conduction Losses Low Thermal Resistance to PCB (<3.4°C/W) Enable better thermal dissipation Low Profile (< 1.0 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability 

MSL1, Industrial Qualification 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage|20|V|
|VGS|Gate-to-Source Voltage|± 12||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V|26|A|
|ID@ TA= 70°C|Continuous Drain Current, VGS@ 4.5V|21||
|ID@ TC(Bottom)= 25°C|Continuous Drain Current, VGS@ 4.5V|40||
|ID@ TC(Bottom)= 100°C|Continuous Drain Current, VGS@ 4.5V|40||
|IDM|Pulsed Drain Current|160||
|PD@TA= 25°C|Power Dissipation|2.7|W|
|PD@TC(Bottom)= 25°C|Power Dissipation|37||
||Linear Derating Factor|0.022|W/°C|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 150|°C|



Notes  through  are on page 9 

1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015 ~~_ h _~~ 

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IRLHM620PbF ~~[~~ 

**Static @ TJ = 25°C (unless otherwise specified)** ~~a ee~~ **Parameter Min. Typ. Max. Units Conditions** BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ~~es GQ~~ BVDSS/TJ ~~Q~~ Breakdown Voltage Temp. Coefficient ––– 5.4 ––– mV/°C Reference to 25°C, ID = 1mA ~~esG~~ ~~**O**~~ ––– 1.5 2.2 VGS = 10V, ID = 20A  ~~ee PC~~ RDS(on) Static Drain-to-Source On-Resistance ~~ee~~ ––– ~~ee~~ 1.8 2.5 m ~~Po~~ VGS = 4.5V, ID = 20A  ––– 2.7 3.5 VGS = 2.5V, ID = 20A  ~~Ne~~ VGS(th) Gate Threshold Voltage ~~ee~~ 0.5 0.8 ~~ee eee~~ 1.1 V ~~|~~ VDS = VGS, ID = 50µA ~~es~~ VGS(th) Gate Threshold Voltage Coefficient ––– ~~ne~~ -4.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1 µA[V][DS][ = 16V][,][ V][GS][ = 0V ] ~~eeee~~ ––– ––– 150 ~~LE~~ VDS = 16V,VGS = 0V,TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 12V ~~ee _ ee [F _ a~~ gfs ~~ee~~ Forward Transconductance ~~ee~~ 58 ––– ~~es~~ ––– S VDS = 10V, ID = 20A Qg Total Gate Charge ––– 52 78 VDS = 10V ~~reer GQ~~ Qgs Gate-to-Source Charge ––– 6.3 ––– nC VGS = 4.5V ~~eeee~~ Qgd Gate-to-Drain Charge ––– 25 ––– ID = 20A (See Fig.17 & 18) ~~ee~~ RG Gate Resistance ––– 2.6 –––  ~~esQQ a~~ td(on) Turn-On Delay Time ––– 7.5 ––– VDD = 10V, VGS = 4.5V tr Rise Time ––– 25 ––– ID = 20A ~~re~~ ns td(off) Turn-Off Delay Time ––– 57 ––– RG= 1.0 ~~ee~~ tf Fall Time ––– 37 ––– See Fig.15 ~~ee~~ Ciss Input Capacitance ––– 3620 ––– VGS = 0V ~~ee ee~~ Coss Output Capacitance ––– 900 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 620 ––– ƒ = 1.0MHz ~~rs~~ 

## **Avalanche Characteristics** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|–––|120|mJ|
|IAR|Avalanche Current|–––|20|A|



**Diode Characteristics** ~~ee~~ **Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current MOSFET symbol D ––– ––– 40 (Body Diode) showing  the A G ISM Pulsed Source Current integral reverse ––– ––– 160 S (Body Diode)  p-n junction diode. ~~**ee**~~ VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 20A, VGS = 0V  trr Reverse Recovery Time ––– 41 62 ns TJ = 25°C, IF = 20A, VDD = 10V ~~eeWf~~ Qrr Reverse Recovery Charge ~~ee—________+—+-}+-+~~ ––– ~~ss~~ 68 100 nC di/dt = 220A/µs  ~~ss~~ 

**Thermal Resistance** 

||**Parameter**|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJC (Bottom)|Junction-to-Case|–––|3.4|°C/W|
|RJC (Top)|Junction-to-Case|–––|37||
|RJA|Junction-to-Ambient|–––|46||
|RJA (<10s)|Junction-to-Ambient|–––|31||



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1000 1000<br>60µs PULSE WIDTH TOP           VGS10V 60µs PULSE WIDTH TOP           VGS10V<br>Tj = 25°C 4.5V Tj = 150°C 4.5V<br>3.5V 3.5V<br>2.5V 2.5V<br>100 2.0V 2.0V<br>1.8V 1.8V<br>1.5V 100 1.5V<br>BOTTOM 1.3V BOTTOM 1.3V<br>10<br>10 =<br>1<br>1.3V<br>1.3V<br>0.1 0.1 eee 1 10 100 1 0.1 efiSst 1 Sceneati 10 St, 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics  Fig 2.   Typical Output Characteristics<br>1000 1.6<br>VDS = 10V ID = 20A<br>60µs PULSE WIDTH VGS = 4.5V<br>1.4<br>100<br>Te) OP 1.2<br>T J  = 150°C<br>7 ae<br>1.0<br>10 if TJ = 25°C LE<br>0.8<br>1.0 Ty/ 0.6 nyTEAL E<br>0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  Cds SHORTED ID= 20A<br>C rss    = C gd  12.0 V DS = 16V<br>Coss  = Cds + Cgd VDS= 10V<br>10000 10.0 V DS = 4.0V<br>Lo 8.0 cee 2<br>Ciss<br>C oss 6.0<br>1000 C rss a DG<br>ile 4.0 Ob<br>2.0<br>100 Li itl | 0.0 7/406aanfri} tf<br>1 10 100 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig 6.** 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback ~~= °°” °»°@—™~~ 

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IRLHM620PbF 

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1000<br>100<br>TJ = 150°CJ = 150°C= 150°C°CC<br>TJ = 25°CJ = 25°C= 25°C<br>10<br>V GS  = 0V<br>1.0 [|<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100 100 100µsec<br>TJ = 150°CJ = 150°C= 150°C°CC<br>1msec<br>DC 10msec<br>TJ = 25°CJ = 25°C= 25°C<br>10 10<br>Tc = 25°C<br>V GS  = 0V Tj = 150Single Pulse°C<br>1.0 [| 1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Forward Voltage  Fig 8.   Maximum Safe Operating Area<br>100 1.6<br>90<br>1.4<br>Limited By Package<br>= Gas<br>80<br>1.2<br>70<br>a Hees ott<br>1.0<br>60 Ao ASS PSN<br>50 0.8<br>Pos<br>40<br>0.6 ID = 50µA<br>30 | RSS ID = 250µA<br>20 SEE 0.4 I D  = 1.0mA AZLLN<br>0.2 I D  = 1.0A<br>10 es ee ee | RSSSEEEEN<br>ee PTET<br>0 0.0<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage Vs. Temperature 

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10<br>D = 0.50 TLa<br>1<br>eT 0.20  sat Mall<br>0.10<br>ee 0.05 Se"<br>0.1 0.02<br>0.01<br>isan EB oat GA Ben a<br>0.01 pezall 22000| | ROAV<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>Tel sue EME ET<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015 ~~a~~ 

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7<br>ID = 20A<br>6<br>5<br>4<br>\ TJ = 125°C<br>32 PSE<br>TJ = 25°C<br>1 Pte yy |<br>0 2 4 6 8 10 12<br>VGS, Gate -to -Source Voltage  (V)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On– Resistance vs. Gate Voltage 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>W V/ 2 \/= 0V TL<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 14a.** Unclamped Inductive Test Circuit 

**Fig 15a.** Switching Time Test Circuit 

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IRLHM620PbF<br>[<br>500<br>ID<br>TOP         5.8A<br>400 12A<br>BOTTOM 20A<br>300<br>IN<br>200<br>100 LI ENUN<br>0 PPeSSWNJ<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 14b.** Unclamped Inductive Waveforms 

**Fig 15b.** Switching Time Waveforms 

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**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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Id<br>Vds<br>Vgs<br>Vgs(th) !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17.** Gate Charge Test Circuit 

**Fig 18.** Gate Charge Waveform 

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## **PQFN 3.3 x 3.3 Outline “B” Package Details** 

## **PQFN 3.3 x 3.3 Outline “G” Package Details** 

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8 7 6 5<br>#1 2 3 4<br>**----- End of picture text -----**<br>


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#1 2 3 4<br>8 7 6 5<br>**----- End of picture text -----**<br>


For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: - - http://www.irf.com/technical info/appnotes/an 1154.pdf 

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## **PQFN 3.3 x 3.3 Part Marking** 

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INTERNATIONAL<br>RECTIFIER LOGO<br>Ne<br>DATE CODE<br>—!<br>XXXX PART NUMBER<br>ASSEMBLY ~<br>SITE CODE ~ ~ ?YWW? —_ MARKING CODE<br>(Per Marking Spec)<br>(Per SCOP 200-002) XXXXX<br>¢ \ LOT CODE<br>PIN 1 (Eng Mode - Min last 4 digits of EATI#)<br>(Prod Mode - 4 digits of SPN code)<br>**----- End of picture text -----**<br>


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PIN 1<br>IDENTIFIER<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **PQFN 3.3 x 3.3 Tape and Reel** 

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REEL DIMENSIONS TAPE DIMENSIONS<br>DIMENSION (MM) DIMENSION (INCH)<br>CODE MIN MAX MIN MAX<br>Ao 3.50 3.70 .138 .146<br>Bo 3.50 3.70 .138 .146<br>Ko 1.10 1.30 .043 .051<br>P1 7.90 8.10 .311 .319<br>QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  W 11.80 12.20 .465 .480<br>W1 12.30 12.50 .484 .492<br>Qty 4000<br>Reel Diameter 13   Inches<br>CODE DESCRIPTION<br>Ao Dimension design to accommodate the component width<br>Bo Dimension design to accommodate the component lenght<br>Ko Dimension design to accommodate the component thickness<br>W Overall width of the carrier tape<br>P1 Pitch between successive cavity centers<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F††guidelines)||
|**Moisture Sensitivity Level**|PQFN 3.3mm x 3.3mm|MSL1<br>(per JEDEC J-STD-020D††)|
|**RoHS Compliant**|Yes||



- 

- † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product info/reliability †† Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

-   Repetitive rating;  pulse width limited by max. junction temperature. 

-    Starting TJ = 25°C, L = 0.59mH, RG = 50, IAS = 12A. 

-  Pulse width  400µs; duty cycle  2%. 

-   R is measured at TJ of approximately 90°C. 

-   When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-  Calculated continuous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability. 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|1/14/2014|Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option  (EOL notice #259)<br>Updated data sheetwith new IRcorporate template|
|5/29/2015|Added Rdson  typical ="1.5m", Max = "2.2m" @ VGS=10V,ID=20A on page 2.<br>Updated Rdson typical from "2m" to "1.8m" @ VGS=4.5V,ID=20A on page 2.<br>Updated package outline and tape andReelonpage7& 8.|
|9/25/2015|Updated package outline to reflect the PCN # (67-PCN90-Public-R2) for “option B” and added<br>package outline for “option G” on page 7<br>Updated "IFX" logo on allpages.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irlhm620trpbf/mosfet-n-ch-20v-40a-150deg-c-37w/dp/3155155)
---

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