# Power MOSFET, N Channel, 30 V, 40 A, 4800 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3155154/)

**URL**: https://novapart.co/products/IRLB8748PBF/power-mosfet-n-channel-30-v-40-a-4800-ohm-to-220ab
**SKU**: IRLB8748PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3190
**Stock**: 1000+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 75W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 40A |
| Drain Source On State Resistance | 4800µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155154/)

## PD IRLB8748PbF 

## **Applications** 

Optimized for UPS/Inverter Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC 

Converters with Synchronous Rectification for Telecom and Industrial use 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS 

## HEXFET Power MOSFET 

|**VDSS**<br>**30V**|**RDS(on) max**<br>**4.8m**|**RDS(on) max**<br>**4.8m**|**Qg**<br>**15nC**|
|---|---|---|---|
|||||
||D|||
||D|S||
||G|||
||TO-220AB|||
||IRLB8748PbF|||



Ultra-Low Gate Impedance 

Fully Characterized Avalanche Voltage and Current Lead-Free 

|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**|**Units**|
|---|---|---|
|VDS<br>VGS|Drain-to-Source Voltage<br>Gate-to-Source Voltage<br>± 20<br>30<br>~~a~~<br>~~ee~~|V|
|ID@ TC= 25°C|= 25°C<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>92<br>:||
|ID@ TC= 100°C<br>ID@ TC= 25°C|= 100°C<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>= 25°C<br>Continuous Drain Current,VGS@ 10V(Package Limited)<br>78<br>65<br>~~LO~~<br>~~a~~|A|
|IDM|Pulsed Drain Current<br>370<br>~~LO~~||
|PD@TC= 25°C<br>Maximum Power Dissipation<br>PD@TC= 100°C<br>Maximum Power Dissipation<br>75<br>38<br>W<br>~~a~~<br>~~se~~|||
|TJ<br>TSTG|Linear DeratingFactor<br>W/°C<br>Operating Junction and<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>MountingTorque, 6-32 or M3 screw<br>0.5<br>10lbf n(1.1N m)<br>-55  to + 175<br>300 (1.6mm from case)<br>°C<br>~~ee~~<br>~~po~~<br>~~[ooo~~<br>~~I~~<br>~~OT~~||
|**Thermal Resistance**|||
||**Parameter**<br>**Typ.**<br>**Max.**|**Units**|
|RθJC<br>RθCS<br>RθJA|Junction-to-Case<br>–––<br>2.0<br>Case-to-Sink,Flat Greased Surface<br>0.5<br>–––<br>Junction-to-Ambient<br>–––<br>62<br>~~SO~~<br>~~———~~<br>~~oe oo~~<br>~~a~~|°C/W|
|Notes<br>®|through<br>are on page 9<br>Oo||
|www.irf.com||1|



04/22/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~Rs~~|**Min.**|**Typ.**<br>~~GOO~~|**Max. **<br>~~GOO~~|**Units**<br>~~GOO~~|**Conditions**<br>~~GOO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~<br>~~GO~~|30<br>~~O~~|–––<br>~~GOO~~<br>~~O~~|–––<br>~~GOO~~|V<br>~~GOO~~<br>~~GOGO~~|VGS= 0V, ID= 250µA<br>~~GOO~~<br>~~GOGO~~|
|∆ΒVDSS/∆TJ<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~Rs~~<br>~~GO~~<br>~~ee~~|–––<br>~~O~~<br>~~e~~|21<br>~~GOO~~<br>~~O~~|–––<br>~~GOO~~|mV/°C<br>~~GOO~~<br>~~GOGO~~|Reference to 25°C, ID= 1mA<br>~~GOO~~<br>~~GOGO~~<br>~~—~~|
|RDS(on)<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~GO~~<br>~~ee~~<br>~~**e**e~~|–––<br>~~O~~<br>~~e~~|3.8<br>~~O~~|4.8|mΩ<br>~~GOGO~~|VGS= 10V, ID= 40A<br>~~GOGO~~<br>~~—~~|
|||–––<br>~~e~~<br>~~eee~~|5.5<br>~~FT~~<br>~~eee~~|6.8<br>~~FT~~<br>~~eee~~||VGS= 4.5V, ID= 32A<br>~~—~~<br>~~®~~<br>~~ee~~|
|VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~ee~~<br>~~**e**e~~|1.35<br>~~e~~<br>~~eee~~<br>~~es~~|1.8<br>~~FT~~<br>~~eee~~|2.35<br>~~FT~~<br>~~eee~~|V|VDS= VGS, ID= 50µA<br>~~—~~<br>~~®~~<br>~~ee~~<br>~~eee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~**e**e~~<br>~~s~~|–––<br>~~eee~~<br>~~s~~<br>~~es~~<br>~~ce~~|-7.1<br>~~FT~~<br>~~eee~~<br>~~s~~<br>~~eee~~|–––<br>~~FT~~<br>~~eee~~<br>~~s~~<br>~~ee~~|mV/°C<br>~~s~~<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~**e**e ~~<br>~~s~~<br>~~ee~~|–––<br> ~~eee~~<br>~~s~~<br>~~es~~<br>~~ee~~<br>~~ce~~<br>~~**|**~~|–––<br>~~FT~~<br>~~eee~~<br>~~s~~<br>~~ee~~<br>~~eee~~<br>~~**|**~~|1.0<br>~~FT~~<br>~~eee~~<br>~~s~~<br>~~ee~~<br>~~ee~~|µA<br>~~s~~<br>~~ee~~<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~®~~<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ce~~<br>~~**|**~~|–––<br>~~ee~~<br>~~eee~~<br>~~**|**~~|150<br>~~ee~~<br>~~ee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ce ~~<br>~~**|**~~<br>~~a~~|–––<br>~~ee~~<br> ~~eee ~~<br>~~**|**~~<br>~~a~~|100<br>~~ee~~<br> ~~ee~~<br>~~a~~|nA<br>~~ee~~<br>~~ee ~~<br>~~a~~<br>~~GO~~|VGS= 20V<br>~~ee~~<br> ~~eee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~rs~~|–––<br>~~a~~<br>~~a~~|-100<br>~~a~~<br>~~a~~<br>~~GO~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~es~~|196<br>~~a~~<br>~~a~~<br>~~es~~<br>~~rs~~|–––<br>~~a~~<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~a~~<br>~~es~~<br>~~GO~~|S<br>~~a~~<br>~~es~~<br>~~GO~~|VDS= 15V, ID= 32A<br>~~a~~<br>~~es~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~rs~~<br>~~ee~~|15<br>~~ee~~|23<br>~~GO~~<br>~~ee~~|nC<br>~~GO~~<br>~~GOO~~|VDS= 15V<br>VGS= 4.5V<br>ID= 32A<br>~~GOO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|3.6<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|2.2<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~|5.9<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee~~|3.9<br>~~ee~~|–––<br>~~ee~~|||
|Qsw|Switch Charge(Qgs2+ Qgd)<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>~~GO~~|8.1<br>~~es~~<br>~~GO~~|–––<br>~~es~~<br>|||
|Qoss|Output Charge<br>~~GO~~|–––<br>~~GO~~<br>~~Ge~~|11<br>~~GO~~<br>~~rs~~|–––<br><br>|nC<br>~~GOO~~<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~GOO~~<br>~~GO~~|
|RG|Gate Resistance<br>~~GO~~<br>~~en~~|–––<br>~~GO~~<br>~~en~~<br>~~Ge~~|2.0<br>~~GO ~~<br>~~en~~<br>~~rs~~|3.5<br> <br>~~en~~<br>|Ω<br> ~~GOO~~<br>~~en~~<br>~~GO~~|~~GOO~~<br>~~en~~<br>~~GO~~|
|td(on)|Turn-On DelayTime<br>~~en~~|–––<br>~~en~~<br>~~Ge~~|14<br>~~en~~<br>~~rs ~~|–––<br>~~en~~<br>|ns<br>~~en~~<br> ~~GO~~|RG= 1.8Ω<br>ID= 32A<br>VDD= 15V, VGS= 4.5V<br>~~en~~<br>~~GO~~<br>©|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|96<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|16<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~|34<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|2139<br>~~ee~~|–––<br>~~ee~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|464<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~eG~~|–––<br>~~eG~~|199<br>~~eG~~|–––<br>~~eG~~|||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>9.0V 9.0V<br>7.0V 7.0V<br>5.5V 5.5V<br>4.5V A 4.5V aie<br>4.0V 4.0V<br>100 3.5V 100 3.5V<br>BOTTOM 3.0V BOTTOM 3.0V<br>3.0V<br>Zea P e el<br>10 3.0V 10<br>≤60µs PULSE WIDTH<br>≤60µs PULSE WIDTH Tj = 175°C<br>Tj = 25°C<br>1 r ir sm e A 1 ECE i$i<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>ID = 40A<br>1.8 V GS = 10V<br>100 | P t)|)|| reee 1.6 H HHBERERE<br>P T = 175°C t  o t 1.4 E TL<br>10 e J  /a 1.2 ERREREPZAEEeLLL A<br>1 ff | | | | Pan<br>S S 1.0 T TT<br>eeeS AA EE<br>T = 25°C<br>1 J  0.8<br>o e A e e e eoeoee e By<br>— VDS = 15VDS = 15V= 15V 0.6 t T<br>≤60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 P Tisano.isano. 0.4 PPEEEETT EE<br>1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000 | ee<br>100 P t)|)|| reee<br>P T = 175°C t  o t<br>J<br>10 e /a<br>1 ff | | | |<br>S eeeS<br>T = 25°C<br>J<br>1<br>o e A e e e eoeoee e<br>— VDS = 15VDS = 15V= 15V<br>≤60µs PULSE WIDTH60µs PULSE WIDTH<br>0.1 P Tisano.isano.<br>1 2 3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 14.0<br>VCCGS  iss   = C = 0V,       f = 1 MHZ = Cgs + Cgd,  C ds SHORTED 12.0 ID= 32A VDS= 24V<br>S Crss  oss   = Cds gd + Cgd e e VDS e = 15V e<br>10.0<br>Ciss<br>8.0<br>1000 m aaiitiomallii aa<br>e e ee 6.0 e e<br>Coss<br>4.0<br>Crss<br>2.0<br>100 Sria tm llenii 0.0 Janual| | [| |<br>1 10 100 0 10 20 30 40<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>            Drain-to-Source Voltage           Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100 T = 175°C<br>J  100µsec<br>aA SS 100 La<br>1msecec<br>10<br>10msecc<br>TJ = 25°C 10<br>1<br>Tc = 25°C<br>VGS = 0V Tj = 175°CSingle PulseSingle Pulse<br>0.1 PPoe 1 pRB O R AClCl<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 10<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100µsec<br>100 La<br>1msecec<br>10msecc<br>10<br>Tc = 25°C<br>Tj = 175°CSingle PulseSingle Pulse<br>pRB O R AClCl<br>1<br>0 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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100 2.5<br>Limited By Package<br>FEE) « (RO<br>80<br>2.0<br>aa B SNNGHEEEE<br>60 PPM P ASS<br>1.5<br>PN) H HS<br>40<br>ID = 50µA<br>ID = 250µA<br>1.0<br>P ENG] EE : ID = 1.0mA EES<br>20<br>Pitt}<br>0 0.5<br>TTT ty<br>25 PP 50 75 100 125 N) 150 175 -75 E -50 -25 ELS 0 25 50 75 100 125 150 175<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05 R1 R1 R2 R2 R3 R3 R4R4 Ri (°C/W)   1.55246   0.005303 τi (sec)<br>0.010.02 τJ τJτ1τ1 τ2 τ2 τ3τ3 τ4τ4 τCτ 0.00682   8.2504070.00172   6.932919<br>0.01 Ci= Ciτi/Rii/Ri 0.43999   0.000317<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>PE 2. Peak Tj = P dm x Zthjc + Tc il<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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18 500<br>ID = 40A 450 P T ID<br>16 TOP        6.73A<br>400<br>               11.6A<br>14 cee] 350 Tt BOTTOM   32A<br>12 Pt 300 B E<br>250<br>TN ftYT SP INeenET TTT TT<br>10<br>200<br>8 TJ = 125°C 150<br>AIS] N ERNEE ERE<br>100<br>6<br>PAE TJ = 25°C 50 EA RSSARSOTESEH<br>4 8 0<br>2 4 6 8 10 25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 13c.** Maximum Avalanche Energy vs. Drain Current 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 AA, Ω<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>~<— tp —><br>/<br>IAS<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Waveforms 

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 1<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 14a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 _ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" ®<br>* Vg = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Current Regulator<br>Same Type as D.U.T. Id<br>Vds<br>50KΩΩ<br>Vgs<br>12V .2µFµFF<br>.3µFµFF<br>+<br>D.U.T. -VDSVDSDS<br>Vgs(th)<br>VGSGS<br>3mA<br>Sg ng tn<br>IG t VW ID Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩΩ<br>12V .2µFµFF<br>.3µFµFF<br>+<br>D.U.T. -VDSVDSDS<br>VGSGS<br>3mA<br>IG t VW ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Test Circuit 

**Fig 17.** Gate Charge Waveform 

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TO-220AB packages are not recommended for Surface Mount Application. 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Notes: ®© Repetitive rating;  pulse width limited by When mounted on 1" square PCB (FR-4 or G-10 Material). max. junction temperature. For recommended footprint and soldering techniques refer to ®@ IStarting TAS = 32A.J = 25°C, L = 0.22mH, RG = 25Ω, application note #AN-994. R θ is measured at Ty approximately 90°C. ® Pulse width ≤ 400µs; duty cycle ≤ 2%. @ This is only applied to TO-220AB pakcage. ® Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 78A. 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2009 

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---

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