# Power MOSFET, N Channel, 30 V, 31 A, 8700 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1740783/)

**URL**: https://novapart.co/products/IRLB8721PBF/mosfet-n-ch-30v-62a-to220
**SKU**: IRLB8721PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9310
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rd; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 65W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 8700µohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1740783/)

97390 

## IRLB8721PbF 

## **Applications** 

Optimized for UPS/Inverter Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free 

## HEXFET ® Power MOSFET 

||HEXFET<br>Power MOSFET<br>®|Power MOSFET|Power MOSFET|Power MOSFET|
|---|---|---|---|---|
|**VDSS**|**RDS(on) max**||**Qg (typ.)**||
|**30V **|**8.7m @VGS = 10V**|||**7.6nC**|
||||||
||D||||
||D<br>G|S|||
||TO-220AB<br>IRLB8721PbF||||



|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~LO~~<br>~~|~~|30<br>~~LO~~<br>~~|~~|V<br>~~|~~<br>~~ae~~|
|VGS<br>~~——~~|Gate-to-Source Voltage<br>~~|~~<br>~~——en~~|± 20<br>~~|~~<br>~~en~~||
|ID@ TC= 25°C<br>~~——~~|Continuous Drain Current, VGS@ 10V<br>~~|~~<br>~~LO~~<br>~~——en~~|62<br>~~|~~<br>~~LO~~<br>~~en~~|A<br>~~|~~<br>~~ae~~|
|ID@ TC= 100°C<br>~~——~~|Continuous Drain Current, VGS@ 10V<br>~~LO~~<br>~~——en~~|44<br>~~LO~~<br>~~en~~||
|IDM<br>~~——~~|Pulsed Drain Current<br>~~——en~~|250<br>~~en~~<br>~~es~~||
|PD@TC= 25°C<br>~~——~~|Maximum Power Dissipation<br>~~—— en~~<br>~~es~~|65<br>~~en ~~<br>~~es~~<br>~~es~~|W<br> ~~ae~~<br>~~es~~|
|PD@TC= 100°C|Maximum Power Dissipation<br>~~es~~<br>~~a~~|33<br>~~es~~<br>~~es~~<br>~~a~~||
||Linear DeratingFactor<br>~~es~~<br>~~a~~<br>~~ee~~|0.43<br>~~es~~<br>~~es~~<br>~~a~~<br>~~eee~~|W/°C<br>~~es~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~<br>~~Se~~|-55  to + 175<br>~~eee~~<br>~~Se~~|°C<br>~~Se~~|
||Soldering Temperature, for 10 seconds<br>~~ee ~~<br>~~a~~<br>~~Se~~|300 (1.6mm from case)<br> ~~eee~~<br>~~a~~<br>~~Se~~||
||Mountingtorque,6-32 or M3 screw<br>~~Se~~|10lb n(1.1N m)<br>~~Se~~||



Notes 0) hrough ©) are on page 9 www.irf.com 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|30<br>~~I~~|–––<br>~~GD~~|–––<br>~~GD~~|V<br>~~GO~~|VGS= 0V,ID= 250μA|
|ΔΒVDSS/ΔTJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~I~~|21<br>~~es~~<br>~~GD~~|–––<br>~~es~~<br>~~GD~~|mV/°C<br>~~es~~<br>~~GO~~|Reference to 25°C,ID= 1mA<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~OE~~|–––<br>~~I ~~<br>~~OE~~<br>~~|~~|6.5<br> ~~GD~~<br>~~OE~~<br>~~||~~|8.7<br>~~GD ~~<br>~~OE~~<br>~~|~~|mΩ<br> ~~GO~~<br>~~OE~~|VGS= 10V,ID= 31A<br>~~OE~~<br>~~©~~|
|||–––<br>~~OE~~<br>~~|~~|13.1<br>~~OE~~<br>~~||~~|16<br>~~OE~~<br>~~|~~||VGS= 4.5V,ID= 25A<br>~~OE~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage<br>~~OE~~<br>~~At~~|1.35<br>~~OE~~<br>~~|~~<br>~~At~~<br>~~ee~~|1.80<br>~~OE~~<br>~~| |~~<br>~~At~~|2.35<br>~~OE~~<br>~~|~~<br>~~At~~|V<br>~~OE~~<br>~~At~~|VDS= VGS, ID= 25μA<br>~~OE~~<br>~~©~~<br>~~At~~<br>~~eee~~|
|ΔVGS(th)/ΔTJ|Gate Threshold Voltage Coefficient<br>~~At~~<br>~~es~~|–––<br>~~At~~<br>~~es~~<br>~~ee~~<br>~~ee~~|-7.0<br>~~At~~<br>~~es~~<br>~~ee ee~~|–––<br>~~At~~<br>~~es~~<br>~~ee~~|mV/°C<br>~~At~~<br>~~es~~<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~At~~<br>~~es~~<br>~~ee~~|–––<br>~~At~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~At~~<br>~~es~~<br>~~ee~~<br>~~ee ee~~<br>~~**|**~~|1.0<br>~~At~~<br>~~es~~<br>~~ee~~<br>~~ee~~|μA<br>~~At~~<br>~~es~~<br>~~ee~~<br>~~ee~~|VDS= 24V,VGS= 0V<br>~~At~~<br>~~ee~~<br>~~eee~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~<br>~~a~~|–––<br>~~ee~~<br>~~ee ee~~<br>~~**|**~~<br>~~a~~|150<br>~~ee~~<br>~~ee~~||VDS= 24V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~eee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee ee~~<br>~~**|**~~<br>~~ee~~<br>~~a~~|100<br>~~ee~~<br>~~ee~~<br>~~ee~~|nA<br>~~ee~~<br>~~ee ~~<br>~~ee~~|VGS= 20V<br>~~ee~~<br> ~~eee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~a~~<br>~~PTT~~|–––<br>~~ee~~<br>~~a~~<br>~~PTT~~|-100<br>~~ee~~<br>~~PTT~~||VGS= -20V<br>~~ee~~|
|gfs|Forward Transconductance<br>~~GO~~|35<br>~~a~~<br>~~GO~~<br>~~ee~~|–––<br>~~a~~<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~|S<br>~~GO~~|VDS= 15V,ID= 25A<br>~~GO~~|
|Qg|Total Gate Charge<br>~~GO~~<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|7.6<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~es~~|13<br>~~GO~~<br>~~ee~~|nC<br>~~GO~~<br>~~GD~~|See Fig. 16<br>ID= 25A<br>VDS= 15V<br>VGS= 4.5V<br>~~GO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.9<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.2<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|3.4<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|2.0<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qsw|Switch Charge(Qgs2+Qgd)<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|4.6<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~GD~~|–––<br>~~ee~~<br>~~GD~~|||
|Qoss|Output Charge<br>~~ee~~<br>~~Ps~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee ~~<br>~~Ps~~<br>~~Gs~~<br>|7.9<br>~~ee~~<br> ~~ee~~<br>~~Ps~~<br>~~GD~~<br>~~ss~~<br>|–––<br>~~ee~~<br>~~Ps~~<br>~~GD~~<br>~~ss~~|nC<br>~~Ps~~<br>~~GD~~|VDS= 15V,VGS= 0V<br>~~Ps~~|
|RG|Gate Resistance<br>~~Ps~~<br>~~Ps~~<br>~~ee~~|–––<br>~~Ps~~<br>~~Ps~~<br>~~Gs~~<br>~~ee~~|2.3<br>~~Ps~~<br>~~GD~~<br>~~Ps~~<br>~~ss~~<br>~~ee~~|3.8<br>~~Ps~~<br>~~GD~~<br>~~Ps~~<br>~~ss~~|Ω<br>~~Ps~~<br>~~GD~~<br>~~Ps~~|~~Ps~~<br>~~Ps~~<br>®|
|td(on)|Turn-On DelayTime<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~<br>~~ee~~|9.1<br>~~ss~~<br>~~ee~~<br>~~es~~|–––<br>~~ss~~|ns|RG= 1.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 25A<br>See Fig. 14<br>®|
|tr|Rise Time<br>~~ee ~~<br>~~ee~~|–––<br>~~Gs ~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|93<br> ~~ss~~<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~ss~~<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.0<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|17<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Ciss|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1077<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|pF|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|360<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~|110<br> ~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||



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1000<br>VGS<br>TOP           10V<br>9.0V<br>7.0V<br>5.5V<br>Eero 4.5V<br>4.0V<br>100 3.5V<br>BOTTOM 3.0V<br>| AA a<br>Ar et<br>10<br>3.0V<br>≤ 60μs PULSE WIDTH<br>Tj = 25°C<br>1 aati eli<br>Sniiliim<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>pt yy fc<br>100<br>a>A=<br>10 ff<br>TJ = 175°C<br>) === | tf TJ = 25°C a a<br>1<br>a VDS = 15V<br>≤ 60μs PULSE WIDTH<br>0.1<br>aa<br>0.0 2.0 4.0 6.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           10V<br>9.0V<br>7.0V<br>5.5V<br>Pf | er 4.5V<br>4.0V<br>100 3.5V<br>BOTTOM 3.0V<br>| | | AT tT<br>77<br>10 3.0V<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>1 tt TT<br>Sail<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 25A<br>VGS = 10V ELLY<br>1.5 Baaaeran VA<br>Y<br>1.0 SEREpZanaeae TATXK TTT<br>PELE<br>0.5<br>EL ET ET<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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10000 14<br>VGS   = 0V,       f = 1 MHZ ID= 25A<br>CCiss   = C = Cgs + Cgd,  Cds SHORTED 12 VDS= 24V<br>rss   gd<br>C = C + C VDS= 15V<br>oss   ds  gd<br>Se ee 10 ee<br>1000 Ciss<br>og oo Y<br>Coss 8<br>6<br>H E APS<br>Crss<br>100 Ss ee |TH 4 LL-|AL |<br>allee 20 V |) | | fd dt<br>10<br>0 4 8 12 16 20 24 28<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100 100 100μse c<br>TJ = 175°C<br>1 ms ecc<br>10msec<br>10 10<br>TJ = 25°C<br>1 1<br>TC= 25°CC= 25°C= 25°C<br>TJ= 175°CJ= 175°C= 175°C<br>VGS = 0V Single Pulse<br>0.1 To t e 0.1 CIE tll<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS,  Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)(on)<br>100 100μse c<br>1 ms ecc<br>10msec<br>10<br>1<br>TC= 25°CC= 25°C= 25°C<br>TJ= 175°CJ= 175°C= 175°C<br>Single Pulse<br>0.1 CIE tll<br>0.1 1 10 100<br>VDS,  Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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80 2.5<br>ID = 1.0mA<br>ID = 250μA<br>60 TT LLL 2.0 ESS a ID = 25μA<br>Pe =~<br>TAT SS |<br>40 1.5<br>PUPPET TPN -<br>CTA BNSNS<br>20 PLEA 1.0 TTT TNS<br>CTT AN<br>0 PEE EET EAN 0.5 TTT TTTN<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>TC , CaseTemperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.1 0.020.010.10 0.05 τJ τJτ1 τ1 R1 R1 τ2 Rτ22 R2 Rτ33 R τ3 3 τR4 τ4R4 4 τCτ Ri  0.003454 0.7863120.17246(°C/W) 13.68748 0.0012277.21Eτι (sec)-05<br>eae anni 1] TdT -—<br>0.01 Ci=  Ci τi/Ri i/Ri 1.368218 0.007178<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.001 FE TT 2. Peak Tj = P dm x Zthjc + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>VGS(th) Gate threshold Voltage (V)<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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32 400<br>28 | | I D  = 31A \ [|]]                  ITOP          5.4AD<br>                10A<br>300 BOTTOM   25A<br>24<br>Ff At t—<br>20<br>PNT FA<br>200<br>16<br>pI | T = 125°C 4} NNT<br>J<br>12 PAN we<br>a 100 — :<br>8<br>NSS] RSS<br>T = 25°C<br>J<br>4 eee 0 P| [Ps]<br>2 4 6 8 10 25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>Ω)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**Fig 13a.** Maximum Avalanche Energy vs. Drain Current 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>yb 20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Test Circuit 

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-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>~— tp —><br>/|<br>/<br>IAS<br> Unclamped Inductive Waveforms<br>VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 13c.** Unclamped Inductive Waveforms 

**Fig 14a.** Switching Time Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V t GS=10<br> •<br>| —| - LowGround StrayPla I n eductance<br>•   Low Leakage Inductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 a VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vpp - @ Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% SO ISD<br>* Vag = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Current Regulator<br>Same Type as D.U.T. Id<br>Vds<br>50KΩΩ<br>Vgs<br>12V .2μFμFF<br>.3μFμFF<br>+<br>D.U.T. -VDSVDSDS<br>Vgs(th)<br>VGSGS<br>3mA<br>WN bg ng te<br>IG t [[WA]] ID Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩΩ<br>12V .2μFμFF<br>.3μFμFF<br>+<br>D.U.T. -VDSVDSDS<br>VGSGS<br>3mA<br>WN<br>IG t [[WA]] ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 16a.** Gate Charge Test Circuit 

**Fig 16b.** Gate Charge Waveform 

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TO-220AB packages are not recommended for Surface Mount Application. 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 019<br>DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.32mH, RG = 25Ω, IAS = 25A. @® R θ Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/2009 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLB8721PBF/mosfet-n-ch-30v-62a-to220)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irlb8721pbf/mosfet-n-ch-30v-62a-to220/dp/1740783)
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