# Power MOSFET, N Channel, 30 V, 171 A, 2400 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2617411/)

**URL**: https://novapart.co/products/IRLB8314PBF/power-mosfet-n-channel-30-v-171-a-2400-ohm-to
**SKU**: IRLB8314PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3490
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET Series |
| Qualification | - |
| Power Dissipation | 125W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 171A |
| Drain Source On State Resistance | 2400µohm |
| Gate Source Threshold Voltage Max | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2617411/)

IRLB8314PbF 

HEXFET[® ] Power MOSFET 

## **Application** 

|D<br>S<br>G<br>**Application**<br>Optimized for UPS/Inverter Applications<br>Low Voltage Power Tools<br>**Benefits**<br>Best in Class Performance for UPS/Inverter Applications<br>Very Low RDS(on) at 4.5V VGS<br>**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**2.4**<br>**m**<br>(@VGS= 4.5V)<br>**3.2**<br>**Qg (typical)**<br>**40**<br>**nC**<br>**ID (Silicon Limited)**<br>**171**<br>**ID (Package Limited)**<br>**130A**<br>**A**<br>~~ae~~|D<br>S<br>G<br>**Application**<br>Optimized for UPS/Inverter Applications<br>Low Voltage Power Tools<br>**Benefits**<br>Best in Class Performance for UPS/Inverter Applications<br>Very Low RDS(on) at 4.5V VGS<br>**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**2.4**<br>**m**<br>(@VGS= 4.5V)<br>**3.2**<br>**Qg (typical)**<br>**40**<br>**nC**<br>**ID (Silicon Limited)**<br>**171**<br>**ID (Package Limited)**<br>**130A**<br>**A**<br>~~ae~~|D<br>S<br>G<br>**Application**<br>Optimized for UPS/Inverter Applications<br>Low Voltage Power Tools<br>**Benefits**<br>Best in Class Performance for UPS/Inverter Applications<br>Very Low RDS(on) at 4.5V VGS<br>**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**2.4**<br>**m**<br>(@VGS= 4.5V)<br>**3.2**<br>**Qg (typical)**<br>**40**<br>**nC**<br>**ID (Silicon Limited)**<br>**171**<br>**ID (Package Limited)**<br>**130A**<br>**A**<br>~~ae~~|D<br>S<br>G<br>**Application**<br>Optimized for UPS/Inverter Applications<br>Low Voltage Power Tools<br>**Benefits**<br>Best in Class Performance for UPS/Inverter Applications<br>Very Low RDS(on) at 4.5V VGS<br>**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**2.4**<br>**m**<br>(@VGS= 4.5V)<br>**3.2**<br>**Qg (typical)**<br>**40**<br>**nC**<br>**ID (Silicon Limited)**<br>**171**<br>**ID (Package Limited)**<br>**130A**<br>**A**<br>~~ae~~|D<br>S<br>G<br>**Application**<br>Optimized for UPS/Inverter Applications<br>Low Voltage Power Tools<br>**Benefits**<br>Best in Class Performance for UPS/Inverter Applications<br>Very Low RDS(on) at 4.5V VGS<br>**VDSS**<br>**30**<br>**V**<br>**RDS(on)max**<br>(@ VGS=10V)<br>**2.4**<br>**m**<br>(@VGS= 4.5V)<br>**3.2**<br>**Qg (typical)**<br>**40**<br>**nC**<br>**ID (Silicon Limited)**<br>**171**<br>**ID (Package Limited)**<br>**130A**<br>**A**<br>~~ae~~|
|---|---|---|---|---|
|Ultra-Low Gate Impedance|||||
|Fully Characterized Avalanche Voltage and Current|||||
|Lead-Free, RoHS Compliant|TO-220AB<br>**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>S<br>D<br>G<br>~~-+~~||||
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Form**<br>**Quantity**<br>IRLB8314PbF<br>TO-220AB<br>Tube<br>50<br>IRLB8314PbF<br>**Orderable Part Number**<br>~~—————————~~|||||
|**Absolute Maximium Rating**|||||
|**Symbol**<br>**Parameter**|||**Max.**|**Units**|
|VGS<br>Gate-to-Source Voltage|||± 20|V|
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|||171||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|||120|A|
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Package Limited)|||130||
|IDM<br>Pulsed Drain Current|||664||
|PD @TC= 25°C<br>Maximum Power Dissipation|||125|W|
|PD @TC= 100°C<br>Maximum Power Dissipation|||63|W|
|Linear DeratingFactor|||0.83|W/°C|
|TJ<br>Operating Junction and|||||
|TSTG<br>Storage Temperature Range|||-55  to + 175|°C|
|SolderingTemperature,for 10 seconds (1.6mm fromcase)|||300||
|MountingTorque, 6-32 or M3 Screw|||10 lbf·in(1.1 N·m)||



|**Symbol**|**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RJC|Junction-to-Case|–––|1.2|°C/W|
|RCS|Case-to-Sink,Flat Greased Surface|0.50|–––||
|RJA|Junction-to-Ambient|–––|62||



Notes through  are on page 8 

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## ~~Cinfin eon~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~Dn~~|30<br>~~n~~|–––<br>~~tes~~|–––<br>~~dD~~|V<br>~~dD~~|VGS= 0V,ID= 250µA|
|BVDSS/TJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~Dn~~|–––<br>~~n~~|14<br>~~tes~~|––– mV/°C Reference to 25°C<br>~~dD~~|––– mV/°C Reference to 25°C<br>~~dD~~|––– mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)<br>~~es~~<br>~~a~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~Dn~~<br>~~a~~|–––<br>~~n~~<br>~~a~~|1.9<br>~~tes ~~<br>~~a~~<br>~~ee~~|2.4<br> ~~dD~~<br>~~a~~<br>~~ee~~|m<br>~~dD~~<br>~~a~~<br>~~ee~~|VGS= 10V,ID= 68A<br>~~a~~|
|||–––<br>~~a~~|2.6<br>~~a~~<br>~~ee~~|3.2<br>~~a~~<br>~~ee~~||VGS= 4.5V,ID= 68A<br>~~a~~|
|VGS(th)<br>~~ee~~<br>~~es~~|GateThresholdVoltage<br>~~ee~~|1.2<br>~~ee~~|1.7<br>~~ee~~<br>~~ee~~|2.2<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 100µA<br>––– mV/°C<br>~~ee~~|
|GS(th)<br>VGS(th)/TJ<br>~~ee~~<br>~~es~~|Gate Threshold Voltage Coefficient<br>~~ee~~|–––<br>~~ee~~|-7.0<br>~~ee~~<br>~~ee~~|––– mV/°C<br>~~ee~~<br>~~ee~~|––– mV/°C<br>~~ee~~<br>~~ee~~||
|GS(th)<br>IDSS<br>~~es~~|Drain-to-Source Leakage Current|–––|–––<br>~~ee~~|1.0<br>~~ee~~|µA<br>~~ee~~|VDS=24 V,VGS=0V|
|||–––|–––<br>~~ee~~|150<br>~~ee~~||VDS=24V,VGS=0V,TJ=125°C|
|IGSS<br>~~es~~|Gate-to-Source Forward Leakage|–––|–––<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––<br>~~ee~~|-100<br>~~ee~~||VGS= -20V|
|gfs|Forward Transconductance|307|–––|–––|S|VDS= 15V,ID=68A|
|Qg|Total Gate Charge|–––|40|60|<br>nC<br>~~es~~|VDS= 15V<br>VGS= 4.5V<br>ID= 68A<br>~~es~~|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|6.8|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge|–––|13|–––|||
|Qgd|Gate-to-Drain Charge|–––|8.7|–––|||
|Qgodr<br>~~es~~|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~|11.5<br>~~es~~|–––<br>~~es~~|||
|Qsw<br>~~es~~|Switch Charge(Qgs2 + Qgd)<br>~~es~~|~~es~~|21.7<br>~~es~~|~~es~~|||
|RG<br>~~es~~<br>~~————————~~|Gate Resistance<br>~~es~~<br>~~————————~~|–––<br>~~es~~|1.7<br>~~es~~|–––<br>~~es~~|<br>~~es~~<br>~~ee~~|~~es~~<br>~~ee~~|
|td(on)<br>~~—~~<br>~~————————~~|Turn-On DelayTime<br>~~————————~~|–––|19|–––|ns<br>~~ee~~|VDD= 15V<br>ID= 68A<br>RG= 1.8<br>VGS= 4.5V<br>~~ee~~|
|tr<br>~~—~~<br>~~————————~~|Rise Time<br>~~————————~~|–––|142|–––|||
|td(off)<br>~~—~~<br>~~————————~~<br>~~es~~|Turn-Off DelayTime<br>~~————————~~<br>~~ee~~|–––<br>~~ee~~|32|–––|||
|tf<br>~~————————~~<br>~~es~~|Fall Time<br>~~————————~~<br>~~ee~~|–––<br>~~ee~~|72|–––|||
|Ciss<br>~~————————~~<br>~~es~~|Input Capacitance<br>~~————————~~<br>~~ee~~|–––<br>~~ee~~|5050|–––|<br>pF <br> <br>~~ee~~|VGS= 0V<br>VDS= 15V<br>ƒ= 1.0MHz<br>~~ee~~|
|Coss<br>~~es~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|890|–––|||
|Crss<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|500|–––|||



## **Diode Characteristics** 

|**Diode Characteristics**|**Diode Characteristics**|**Diode Characteristics**|**Diode Characteristics**|**Diode Characteristics**|**Diode Characteristics**|**Diode Characteristics**|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter **|**Min.**|**Typ. M**|**. Max.**|**Units**|**Conditions**|
|IS|Continuous Source Current<br>(BodyDiode)|–––|––– 171|––– 171|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM|Pulsed Source Current<br>(Body Diode)|–––|–––|664|||
|VSD|Diode Forward Voltage|–––|–––|1.0|V|TJ= 25°C,IS= 68A,VGS= 0V|
|trr|Reverse RecoveryTime|–––|21|31|ns  T|ns  TJ= 25°C IF= 68A ,VDD=15V<br>nC   di/dt = 430A/µs|
|Qrr|Reverse RecoveryCharge|–––|54|81|nC   di/dt = 430A/||



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## ~~Cinfineon~~ 

**==> picture [215 x 679] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP           10V<br>5.5V<br>4.5V<br>4.0V<br>3.5V<br>3.3V<br>3.0V<br>BOTTOM 2.8V<br>ye<br>100<br>2.8V<br> 60µs PULSE WIDTH<br>Tj = 25°C<br>Crt<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100<br>10 aan TJ = 175°C =<br>Jf TJ = 25°C<br>1 ye<br>VDS = 15V<br> 60µs PULSE WIDTH<br>Ath<br>0.1<br>1.0 2.0 3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>fi<br>10000<br>poe Ciss<br>Coss<br>1000 ti |<br>Crss<br>Va es<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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**----- Start of picture text -----**<br>
1000<br>VGS<br>TOP           10V<br>5.5V<br>4.5V<br>4.0V<br>3.5V<br>3.3V<br>3.0V<br>BOTTOM 2.8V<br>ZB:<br>100<br>2.8V<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>A<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>1.8<br>ID = 120A<br>1.6 VGS = 10V<br>1.4 Te<br>nanan<br>1.2<br>HERRERO AUER<br>1.0<br>SAEED AUER<br>0.8<br>AT<br>TELE<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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**----- Start of picture text -----**<br>
14<br>ID= 68A VDS= 24V<br>12<br>VDS= 15V<br>10<br>ae<br>8 HA<br>6<br>4 eeeU/<br>2<br>ZEEE<br>0<br>aaen<br>0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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**----- Start of picture text -----**<br>
1000<br>100 TJ = 175°C Fan<br>10<br>TJ = 25 ° C<br>1<br>VGS = 0V<br>0.1<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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**----- Start of picture text -----**<br>
180<br>160 Limited By  Package<br>140 oe eae<br>| Bac<br>120<br>100<br>NEE<br>80<br>a<br>60<br>ee<br>40<br>ee<br>20<br>0 ee<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>100µsec<br>100<br>1msec<br>Limited by<br>Package<br>10<br>OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>1 10msec<br>Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS,  Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>2.52.0 C<br>~<br>1.5 BKSS<br>ID = 100µA<br>NAS<br>ID = 250µA<br>ID = 1.0mA<br>1.0 DANN<br>ARS<br>0.5 \<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
10<br>1<br>D = 0.50 a  —_ oat T111i<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01 ep alll MEA dl Gl<br>Notes:<br>=e SINGLE PULSE eT<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>Ec ||<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**----- Start of picture text -----**<br>
800<br>10<br>                 ID<br>ID = 86A TOP          14A<br>                30A<br>8 LLL 600 Tan BOTTOM   68A<br>6<br>400<br>4 Ke TJ = 125°C A<br>200<br>2 Mees \<br>TJ = 25°C<br>0 TTL = 0 SSA=NNUT<br>2 6 10 14 18 25 50 75 100 125 150 175<br>VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance ( m<br>**----- End of picture text -----**<br>


**Fig 12.** Typical On-Resistance vs. Gate Voltage 

**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 15a.** Unclamped Inductive Test Circuit 

**Fig 15b.** Unclamped Inductive Waveforms 

**Fig 16a.** Switching Time Test Circuit 

**Fig 16b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Vds H! Id<br>Vgs<br>f<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

**Fig 17b.** Gate Charge Waveform 

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## ~~Cinfineon~~ 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

**==> picture [251 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

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7 

|infineon|infineon|infineon|infineon|infineon|
|---|---|---|---|---|
|<br>IRLB8314PbF<br>**Qualification Information**<br>infineon<br>~~Grenee~~|||||
||**Qualification Level**||Industrial<br>(per JEDEC JESD47F)†||
||**Moisture Sensitivity Level**|TO-220AB|N/A||
||**RoHS Compliant**||Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Notes:** 

- Repetitive rating; pulse width limited by max. junction temperature. 

-    Limited by TJmax, starting TJ = 25°C, L = 0.067mH, RG = 50, IAS = 68A, VGS =10V. 

- Pulse width  400µs; duty cycle  2%. 

- R is measured at TJ approximately 90°C. 

-    This value determined from sample failure population, starting TJ =25°C, 

- L=0.5mH, RG = 50, IAS =60A, VGS =10V. 

- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 130A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140). 

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|infineon|infineon|infineon|
|---|---|---|
|<br>IRLB8314PbF<br>**Revision History**<br>infineon<br>~~Grenee~~|||
|**Date**|**Comments**||
||Changed datasheet with Infineon logo - all pages.||
|08/04/2016<br>|Corrected package type from “TO-220Pak” to “TO-220AB” on page 1 and page 8.||
||Updated figure numbers on page 5 & 6.||
||Added disclaimer on lastpage.||



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

**Edition 2016-04-19 IMPORTANT NOTICE** For further information on the product, technology, **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies office **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) .** (www.infineon.com). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified **© 2016 Infineon Technologies AG. All Rights Reserved.** regarding the application of the product, Infineon Technologies hereby disclaims any and all according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **WARNINGS document?** Due to technical requirements products may **Email:** erratum@infineon.com In addition, any information given in this contain dangerous substances. For information on document **is subject to customer’s compliance** the types in question please contact your nearest **with its** obligations stated in this document and Infineon Technologies office. any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and Except as otherwise explicitly approved by Infineon **ifx1** any use of the product of Infineon Technologies in Technologies in a written document signed by **customer’s applications.** authorized representatives of Infineon Technologies, **Infineon Technologies’ products** The data contained in this document is exclusively intended for technically trained staff. It is the **may** not be used in any applications where a **responsibility of customer’s technical** failure of the product or any consequences of the use thereof can reasonably be expected to result in **departments** to evaluate the suitability of the personal injury. product for the intended application and the completeness of the product information given in this document with respect to such application. 

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2016-08-04 



## Links

- [View this product on Novapart](https://novapart.co/products/IRLB8314PBF/power-mosfet-n-channel-30-v-171-a-2400-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irlb8314pbf/mosfet-n-channel-30v-171a-to-220ab/dp/2617411)
---

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