# Power MOSFET, N Channel, 30 V, 260 A, 1950 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1740786/)

**URL**: https://novapart.co/products/IRLB3813PBF/power-mosfet-n-channel-30-v-260-a-1950-ohm-to
**SKU**: IRLB3813PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6340
**Stock**: 500+
**Lead Time**: 92 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 260A |
| Drain Source On State Resistance | 1950µohm |
| Gate Source Threshold Voltage Max | 1.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1740786/)

97407 

## IRLB3813PbF 

## **Applications** 

Optimized for UPS/Inverter Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Power Tools 

## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Lead-Free 

## HEXFET ® Power MOSFET 

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**----- Start of picture text -----**<br>
VDSS RDS(on) max Qg (typ.)<br>30V 1.95m Ω @VGS = 10V 57nC<br>D<br>S<br>D<br>G<br>TO-220AB<br>**----- End of picture text -----**<br>


|and Current<br>Lead-Free||
|---|---|
||**G**<br>**D**<br>**S**|
||Gate<br>Drain<br>Source|
|**Absolute Maximum Ratings**||
||**Parameter**<br>**Units**<br>**Max.**|
|VDS<br>Drain-to-Source Voltage<br>VGS<br>Gate-to-Source Voltage<br>ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V<br>ID@ TC= 100°C<br>Continuous Drain Current,VGS@ 10V<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>PD@TC= 100°C<br>Maximum Power Dissipation<br>V<br>W<br>A<br>120<br>230<br>260<br>1050<br>± 20<br>30<br>190<br>~~op~~<br>~~i~~<br>~~eo ooo~~<br>~~———~~<br>~~ee~~<br>~~oo i~~<br>~~oO~~<br>~~es~~<br>~~ee~~<br>~~a~~||
||Linear DeratingFactor<br>W/°C<br>1.6|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>Mountingtorque,6-32 or M3 screw<br>°C<br>10lb in(1.1N m)<br>-55  to + 175<br>300 (1.6mm from case)<br>~~ee~~<br>~~ee~~<br>~~op~~<br>~~jp~~|
|**Thermal Resistance**||
||**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RθJC<br>Junction-to-Case<br>–––<br>0.64<br>RθCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>RθJA<br>Junction-to-Ambient<br>–––<br>62<br>°C/W<br>:<br>~~————~~<br>~~ae~~<br>~~a~~||
|Notes<br>hrough<br>are on page 9<br>0)<br>©||
|www.irf.com|1|



1 07/03/09 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~a~~<br>~~OO~~|**Min.**<br>~~OO~~|**Typ.**<br>~~OO~~|**Max. **<br>~~OO~~<br>~~GO~~|**Units**<br>~~OO~~<br>~~GO~~|**Conditions**<br>~~OO~~|
|---|---|---|---|---|---|---|
|BVDSS<br>~~Be~~|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~OO~~<br>~~ss~~<br>~~Be~~|30<br>~~OO~~<br>~~ss~~|–––<br>~~OO~~<br>~~ss~~<br>~~I~~|–––<br>~~OO~~<br>~~ss~~<br>~~GO~~<br>~~DN~~|V<br>~~OO~~<br>~~ss~~<br>~~GO~~<br>~~DN~~|VGS= 0V, ID= 250µA<br>~~OO~~<br>~~ss~~<br>~~(~~|
|∆ΒVDSS/∆TJ<br>~~Be~~|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~Be~~|–––<br>~~GO~~|11<br>~~GO~~<br>~~I~~|–––<br>~~GO~~<br>~~GO~~<br>~~DN~~|mV/°C<br>~~GO~~<br>~~GO~~<br>~~DN~~|Reference to 25°C, ID= 1.0mA<br>~~GO~~<br>~~(~~|
|RDS(on)<br>~~Be~~|Static Drain-to-Source On-Resistance<br>~~Be~~|–––<br>~~SO~~<br>~~ee~~|1.60<br>~~I~~<br>~~SO~~<br>~~ee~~|1.95<br>~~DN~~<br>~~SO~~<br>~~ee~~|mΩ<br>~~DN~~<br>~~SO~~<br>~~ee~~|VGS= 10V, ID= 60A<br>~~(~~<br>~~SO~~<br>~~@~~|
|||–––<br>~~SO~~<br>~~ee~~|2.00<br>~~I~~<br>~~SO~~<br>~~ee~~|2.60<br>~~DN~~<br>~~SO~~<br>~~ee~~||VGS= 4.5V, ID= 48A<br>~~(~~<br>~~SO~~<br>~~@~~|
|VGS(th)<br>~~Be~~|Gate Threshold Voltage<br>~~Be~~<br>~~SA~~|1.35<br>~~ee~~<br>~~SA~~<br>~~Ge~~|1.90<br>~~I ~~<br>~~ee ~~<br>~~es~~|2.35<br> ~~DN~~<br> ~~ee~~|V<br>~~DN~~<br>~~ee~~|VDS= VGS, ID= 150µA<br>~~(~~<br>~~@~~<br>~~EE~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~es~~|–––<br>~~es~~<br>~~Ge~~|-7.8<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~EE~~|mV/°C<br>~~es~~<br>~~EE~~||
|IDSS|Drain-to-Source Leakage Current<br>~~PE~~|–––<br>~~Ge~~<br>~~PE~~|–––<br>~~es~~<br>~~PE~~|1.0<br>~~PE~~<br>~~EE~~|µA<br>~~PE~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~PE~~<br>~~EE~~|
|||–––<br>~~PE~~<br>~~PT~~|–––<br>~~PE~~<br>~~PT~~|100<br>~~PE~~<br>~~EE~~<br>~~PT~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~PE~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~PE~~<br>~~a~~|–––<br>~~PE~~<br>~~PT~~<br>~~a~~|–––<br>~~PE~~<br>~~PT~~<br>~~a~~|100<br>~~PE~~<br>~~EE~~<br>~~PT~~<br>~~a~~|nA<br>~~PE~~<br>~~EE~~<br>~~a~~|VGS= 20V<br>~~PE~~<br>~~EE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~a~~|–––<br>~~a~~|-100<br>~~a~~||VGS= -20V<br>~~a~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~GO~~|140<br>~~a~~<br>~~a~~<br>~~GO~~|–––<br>~~a~~<br>~~GO~~|–––<br>~~a~~<br>~~GO~~|S<br>~~a~~<br>~~GO~~|VDS= 15V, ID= 48A<br>~~a~~<br>~~GO~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|57<br>~~es~~<br>~~es~~|86<br>~~es~~|nC|See Fig. 16<br>VDS= 15V<br>VGS= 4.5V<br>ID= 48A|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|16<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|6.7<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|19<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|15<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~|–––<br>~~es~~<br>~~ee~~|25.7<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Qoss|Output Charge<br>~~eS~~|–––<br>~~ee~~<br>~~eS~~|35<br>~~es~~<br>~~eS~~|–––<br>~~eS~~|nC<br>~~eS~~|VDS= 16V, VGS= 0V<br>~~eS~~|
|RG|Gate Resistance<br>~~eS~~<br>~~GO~~<br>~~es~~|–––<br>~~eS~~<br>~~GO~~|0.87<br>~~eS~~<br>~~GO~~|1.3<br>~~eS~~<br>~~GO~~|Ω<br>~~eS~~<br>~~GO~~|~~eS~~<br>~~GO~~<br>©|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~ee~~|36<br>~~es~~|–––|ns|VDD= 15V, VGS= 4.5V<br>ID= 48A<br>See Fig. 14<br>RG= 1.8Ω<br>©|
|tr|Rise Time<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~|170<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|33<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~es~~<br>~~ee~~|60<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|8420<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~|1620<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~|650<br>~~es~~<br>~~es~~|–––<br>~~es~~|||



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**==> picture [434 x 487] intentionally omitted <==**

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10000 1000<br>VGS VGS<br>TOP           10V9.0V Set TOP           10V9.0V<br>7.0V 7.0V<br>5.5V 5.5V Jone rit<br>4.5V Siiitiimm [maui] 4.5V ) A<br>4.0V 4.0V<br>1000 3.5V TEE CTT 3.5V |<br>BOTTOM 3.0V BOTTOM 3.0V<br>fA ee |<br>100<br>Sener a A amaneeeeaiit YW Y S n.Tpita<br>100 jor Uf o 3.0V o<br>O O Wyn<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>2stEli renYt TTT ee ee ee<br>≤ 60µs PULSE WIDTH<br>10 el ML 3.0V TTT 10 E TL Tj = 175°C<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>ID = 120A<br>eseeedeeee VGS = 10V<br>100 TJ = 175°C<br>1.5<br>p o Bannnpz4<br>a eee 2 eee ee ee ee Wg<br>fs<br>T = 25°C<br>10 J<br>H —tf/f ee |_| oe _ ee e nepa<br>es Fe se 1.0 LA<br>1 S S<br>VDS = 15V<br>e e — = e ee<br>≤ 60µs PULSE WIDTH<br>0.1 0.5<br>| [ty] ee eeOe<br>1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance vs. Temperature 

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**==> picture [440 x 485] intentionally omitted <==**

**----- Start of picture text -----**<br>
100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 48A<br>C  = C 12.0<br>rss   gd  VDS= 24V<br>| Lo | Coss   = Cds + Cgd ] 10.0 ES VDS= 15V<br>10000 Ciss<br>8.0<br>E Coss E 6.0 T TT A<br>1000<br>C<br>rss 4.0<br>2.0<br>100 ETRE) © 0.0  AR<br>1 10 100 0 25 50 75 100 125 150<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 10000<br>OPERATION IN THIS AREA<br>TJ = 175°C LIMITED BY R DS(on)<br>100 1000<br>100µsec<br>1msec<br>10 TJ = 25°C 100<br>10msec<br>1 10<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**==> picture [439 x 489] intentionally omitted <==**

**----- Start of picture text -----**<br>
300250200 SL Pesf / Limited By Package 3.02.52.0 PPPP  PeettAKtte}ARRAELte tytT tt<br>150 C OS)A 1.5 P APBRCEEEEP SAT<br>ID = 150µA<br>ID = 1.0mA<br>100 Hf}a tf). 1.0 ID = 1.0A >1} eNeEeANNA<br>50 aeeeN 0.5 P t |PEEP | | | NN<br>E EE<br>P N tt TT | TT IN<br>0 0.0 Pt et te tT TT | |<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Threshold Voltage vs. Temperature<br>Case Temperature<br>1<br>D = 0.50<br>MEH} EE re  F<br>0.20<br>0.1 s ee ea<br>0.10<br>0.05<br>0.01 S 0.010.02 EE τ J τ p J τ 1 τ 1 R1 epe R1 τ 2 τ R22 R2 R τ 33 R τ 3 3 p τ n R4 τ 4R4 4 τ C τ Ri (°C/W)   0.4985      0.0046000.0022      8.2465800.0001      6.149340  τ i (sec)<br>pee<br>e 2k Ci=  τ i / Ri 0.1392      0.000300<br>0.001 Ci i / Ri<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>eea a Seee eeeee ee eee 1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc LHil<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**==> picture [206 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>ID = 60A<br>TT]<br>10<br>CLE}<br>8<br>6 Ply) fof<br>4 iw TJ = 125°C<br>\ | _<br>2<br>pr TJ = 25°C<br>0 Fo, | ff<br>2 4 6 8 10<br>VGS, Gate -to -Source Voltage  (V)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

**==> picture [215 x 201] intentionally omitted <==**

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2200<br>2000 ID<br>e e TOP         17A<br>1800<br>27A<br>1600 BOTTOM 48A<br>A EE<br>1400<br>1200<br>P ACE<br>1000<br>800 R CPXEEEEEE<br>600<br>C ANCER<br>400<br>E SS<br>200<br>0 E CE SSS<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13a.** Maximum Avalanche Energy vs. Drain Current 

**==> picture [147 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Test Circuit 

**==> picture [163 x 114] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br><_< tp —><br>/<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 13c.** Unclamped Inductive Waveforms 

**==> picture [313 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>-<br>10%<br>D.U.T. | VGS AM<br>≤ 1<br>≤ 0.1 % td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 14a.** Switching Time Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V t GS=10<br>| — -  •   GroundLow StrayPlane Inductance<br>•   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>- - + Current Current di/dt<br>o BB 1 ® ®r D.U.T. VDS Waveform Diode Recoverydv/dt AN‘<br>00 a VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vpp - @ Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% SO ISD<br>* Vag = 5V for Logic Level Devices<br>Fig 15.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>Current Regulator<br>Same Type as D.U.T. Id<br>Vds<br>50K Ω<br>Vgs<br>12V .2 µ F<br>.3 µ F<br>+<br>D.U.T. -VDSVDSDS<br>Vgs(th)<br>VGSGS<br>3mA EL ' ' root ft<br>ee<br>AVA ens t [[WA]] Qgodr Qgd Qgs2 Qgs1<br>**----- End of picture text -----**<br>


**==> picture [158 x 160] intentionally omitted <==**

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>+<br>D.U.T. -VDSVDSDS<br>VGSGS<br>3mA EL<br>AVA IG ens t [[WA]] ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 16a.** Gate Charge Test Circuit 

**Fig 16b.** Gate Charge Waveform 

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TO-220AB packages are not recommended for Surface Mount Application. 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Notes: ®® When mounted on 1" square PCB (FR-4 or G-10 Material). 

® When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Repetitive rating;  pulse width limited by max. junction temperature. ® Starting TJ = 25°C, L = 0.45mH, RG = 25 Ω , IAS = 48A. @® 

θ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2009 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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