# Power MOSFET, N Channel, 30 V, 150 A, 0.0038 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1013408/)

**URL**: https://novapart.co/products/IRL7833SPBF/power-mosfet-n-channel-30-v-150-a-00038-ohm-to-263
**SKU**: IRL7833SPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 140W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0038ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 0.0038ohm |
| Gate Source Threshold Voltage Max | 2.3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013408/)

## PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF 

## **Applications** 

High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use Lead-Free 

|**VDSS **|**RDS(on) max**|**Qg**|
|---|---|---|
|**30V**|**3.8m**|**32nC**|



## **Benefits** 

Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 

TO-220AB D[2] Pak TO-262 IRL7833 IRL7833S IRL7833L 

## **Absolute Maximum Ratings** 

|~~Ee~~|**Parameter**<br>~~Ee~~|**Max.**<br>|**Units**|
|---|---|---|---|
|VDS<br>~~Ee~~|Drain-to-Source Voltage<br>~~LO~~<br>~~Ee~~|30<br>~~LO~~<br>|V|
|VGS<br>~~Ee~~<br>~~———~~|Gate-to-Source Voltage<br>~~Ee~~<br>~~———~~|± 20<br>||
|ID@ TC= 25°C<br>~~Ee~~<br>~~———~~|Continuous Drain Current, VGS@ 10V<br>~~EeOO~~<br>~~———~~|150<br>~~OO~~|A|
|ID@ TC= 100°C<br>~~———~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~———~~<br>~~a~~|110<br>||
|IDM<br>~~———~~<br>~~a~~|Pulsed Drain Current<br>~~———~~<br>~~a~~|600<br>||
|PD@TC= 25°C<br>~~———~~<br>~~a~~|Maximum Power Dissipation<br>~~———~~<br>~~aa~~<br>~~ee~~|140<br>~~a~~<br>~~ee~~|W<br>~~ee~~|
|PD@TC= 100°C|Maximum Power Dissipation<br>~~ee~~|72<br>~~ee~~||
||Linear Derating Factor<br>~~ee~~|0.96<br>~~ee~~<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~—Z~~|
||Mounting Torque, 6-32 or M3 screw<br>~~ee~~<br>~~To~~|10 lbf in (1.1N m)<br>~~ee~~<br>~~ee~~<br>~~To~~|~~ee~~<br>~~To~~<br>~~—Z~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case<br>~~a~~|–––<br>~~a~~<br>~~LE~~|1.04<br>~~a~~|°C/W<br>~~LT~~|
|RθCS|Case-to-Sink, Flat, Greased Surface<br>~~oO~~|0.50<br>~~oO~~<br>~~LE~~|–––<br>~~oO~~||
|RθJA|Junction-to-Ambient<br>~~oe~~<br>~~EE~~|–––<br>~~LE~~<br>~~oe~~<br>~~EE~~|62<br>~~oe~~<br>~~LT~~||
|RθJA|Junction-to-Ambient (PCB Mount)<br>~~oS~~<br>~~EE~~|–––<br>~~oS~~<br>~~EE~~|40<br>~~oS~~<br>~~LT~~||



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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~rs~~|**Typ.**<br>~~GG~~|**Max. **<br>~~GG~~|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~rs~~|30<br>~~rs~~<br>~~rs~~|–––<br>~~rs~~<br>~~GG~~|–––<br>~~rs~~<br>~~GG~~|V<br>~~rs~~|VGS= 0V, ID= 250µA<br>~~rs~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~<br>~~Gn~~|–––<br>~~rs~~<br>~~rs~~<br>~~Gn~~|18<br>~~rs~~<br>~~GG~~<br>~~Gn~~|–––<br>~~rs~~<br>~~GG~~<br>~~Gn~~|mV/°C<br>~~rs~~<br>~~Gn~~|Reference to 25°C, ID= 1mA<br>~~rs~~<br>~~Gn~~|
|RDS(on)<br>~~Sn~~|Static Drain-to-Source On-Resistance<br>~~|~~<br>~~Sn~~|–––<br>~~|~~<br>~~|~~|3.1<br>~~|~~<br>~~| |~~|3.8<br>~~|~~<br>~~|~~|mΩ<br>~~|~~<br>~~ee~~|VGS= 10V, ID= 38A<br>~~|~~<br>~~@~~|
|||–––<br>~~|~~<br>~~|~~|3.7<br>~~|~~<br>~~| |~~<br>~~A~~|4.5<br>~~|~~<br>~~|~~<br>~~el~~||VGS= 4.5V, ID= 30A<br>~~|~~<br>~~@~~|
|VGS(th)<br>~~Sn~~|Gate Threshold Voltage<br>~~Sn~~|1.4<br>~~|~~<br>~~Ge~~|–––<br>~~| |~~<br>~~A~~|2.3<br>~~|~~<br>~~el~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~@~~|
|∆VGS(th)/∆TJ<br>~~Sn~~|Gate Threshold Voltage Coefficient<br>~~Sn~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~<br>~~Ge~~|-11<br>~~| |~~<br>~~A~~<br>~~ee~~|–––<br>~~|~~<br>~~el~~<br>~~ee~~|mV/°C<br>~~ee~~<br>~~ee~~||
|IDSS<br>~~Sn~~|Drain-to-Source Leakage Current<br>~~Sn~~<br>~~EE~~|–––<br>~~|~~<br>~~Ge~~<br>~~EE~~<br>~~**|**~~|–––<br>~~| |~~<br>~~A~~<br>~~EE~~<br>~~**|**~~|1.0<br>~~|~~<br>~~el ~~<br>~~EE~~|µA<br> ~~ee~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~@~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~**|**~~|–––<br>~~EE~~<br>~~**|**~~|150<br>~~EE~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~|~~|–––<br>~~**|**~~<br>~~ee~~<br>~~|~~|–––<br>~~**|**~~<br>~~ee~~<br>|100<br>~~ee~~<br>|nA<br>~~ee~~<br>~~GO GO~~|VGS= 20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~|TT~~<br>~~GO~~|–––<br>~~ee~~<br>~~TT~~<br>~~GO~~|-100<br>~~ee~~<br>~~TT~~<br>~~GO~~||VGS= -20V<br>~~ee~~<br>~~GO~~|
|gfs|Forward Transconductance<br>~~|~~<br>~~es~~|150<br>~~|~~<br>~~es~~<br>~~GO~~<br>~~ee~~|–––<br><br>~~es~~<br>~~GO~~<br>~~ee~~|–––<br><br>~~es~~<br>~~GO~~|S<br>~~es~~<br>~~GO GO~~|VDS= 15V, ID= 30A<br>~~es~~<br>~~GO~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|32<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|47<br>~~GO~~<br>~~ee~~|nC<br>~~GO GO~~|See Fig. 16<br>VDS= 16V<br>VGS= 4.5V<br>ID= 30A<br>~~GO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|8.7<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.1<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|13<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.3<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~|18<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qoss|Output Charge<br>~~eG~~<br>~~es~~|–––<br>~~ee ~~<br>~~eG~~<br>~~ee~~|22<br> ~~ee~~<br>~~eG~~<br>~~ee~~|–––|nC<br>~~GO~~|VDS= 16V, VGS= 0V<br>~~GO~~<br>@|
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~ee~~|18<br>~~ee~~<br>~~ee~~|–––|ns|Clamped Inductive Load<br>VDD= 15V, VGS= 4.5V<br>ID= 26A<br>@|
|tr|Rise Time<br>~~es ~~<br>~~ee~~|–––<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|50<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|21<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|6.9<br> ~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Ciss|Input Capacitance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|4170<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 15V|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|950<br> ~~es~~<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~|470<br> ~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||



## **Diode Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|150|A<br>~~O~~|S<br>D<br>G<br>showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol<br>~~OO~~|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)<br>~~Gs~~|–––<br>~~Gs~~|–––<br>~~Gs~~|600<br>~~O~~|||
|VSD|Diode Forward Voltage<br>~~Gs~~<br>~~**e**e~~|–––<br>~~Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~|1.2<br>~~O~~<br>~~ee~~|V<br>~~O~~|TJ= 25°C, IS= 30A, VGS= 0V<br>~~OO~~|
|trr|Reverse RecoveryTime<br>~~Gs~~<br>~~**e**e~~<br>~~s~~|–––<br>~~Gs~~<br>~~ee~~<br>~~s~~|42<br>~~Gs ~~<br>~~ee~~<br>~~es~~|63<br> ~~O~~<br>~~ee~~|ns<br>~~O~~|TJ= 25°C, IF= 30A, VDD= 15V<br>di/dt = 100A/µs<br>~~OO~~<br>~~@~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**e~~<br>~~s~~|–––<br>~~ee~~<br>~~s~~|34<br>~~ee~~<br>~~es~~|51<br>~~ee~~|nC||



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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>7.0V 7.0V<br>mene) oe oe 4.5V PTA AAT 4.5V<br>3.7V 3.7V<br>me, ele 3.5V |) Aca ae 3.5V<br>3.3V 3.3V<br>100 | a | 3.0V 100 B il) /2==:: All 3.0V<br>BOTTOM 2.7V BOTTOM 2.7V<br>Yn Le IH yi 2.7V<br>POM ET TE Y ail a lll<br>10 2.7V 10<br>2a ZA ‘<br>PA P RE EH<br>FEIT TTT<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 aaafe alll TTT IK 1 aePATIealeal iil UTIKIK<br>0.1 1 10 100 1000 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 2.0<br>| T } T_|EE IVD GS = 75A= 10VVD GS = 75A= 10VD GS = 75A= 10VGS = 75A= 10V= 75A= 10V= 10V TIT<br>ee > >|<br>| eee ee 2 TJ = 175°C eee eee<br>1.5<br>| a EEEEEE<br>| | | | op<br>TATE O Te<br>100<br>S+fEes  |e a ee eeJes ee 1.0 p g&e4 adnnee<br>A<br>TJ = 25°C | D RT<br>V = 15V<br>DS<br>20µs PULSE WIDTH<br>hyd} TEEPEEEPEPE<br>10 0.5<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>)(Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           10V<br>7.0V<br>PTA AAT<br>4.5V<br>3.7V<br>|) Aca ae 3.5V<br>3.3V<br>100 B il) /2==:: All 3.0V<br>BOTTOM 2.7V<br>yi 2.7V<br>Y ail a lll<br>10<br>ZA ‘<br>P RE EH<br>TTT<br>20µs PULSE WIDTH<br>1 PATIealaePATIealeal Tj = 175°C iil UTIKIK<br>0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>IVD GS = 75A= 10VVD GS = 75A= 10VD GS = 75A= 10VGS = 75A= 10V= 75A= 10V= 10V TIT<br>1.5<br>EEEEEE<br>op<br>O Te<br>1.0 p e4 adnnee4 adnnee adnnee<br>g&e4 adnnee<br>D RT<br>TEEPEEEPEPE<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>| Coss   = Cds + Cgd<br>10000<br>C<br>iss<br>C<br>oss<br>1000<br>C<br>rss<br>100 PEATE<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br>1000.00<br>T = 175°C<br>J<br>100.00<br>10.00<br>T = 25°C<br>J<br>1.00<br>V = 0V<br>GS<br>0.10<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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12.0<br>ID= 30A<br>10.0<br>V = 24V<br>FE DS<br>V = 15V<br>DS<br>8.0<br>6.0<br>4.0<br>2.00.0 ALE EEL<br>0 5 10 15 20 25 30 35 40<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100µsec<br>10<br>1msec<br>1<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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160 2.5<br>LIMITED BY PACKAGE<br>2.0<br>120<br>P EEP EE E RORRUREE<br>COPS 1.5 L PN<br>80 ID = 250µA<br>PEE AEN LL 1.0 T T T PNK<br>40<br>0 PENPEER oP 0.50.0 LLLELELTTT TTSEL<br>25 50 75 100 125 150 175<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>Tc, Case Temperature (°C)<br>TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Threshold Voltage Vs. Temperature<br>Case Temperature<br> 10<br>rT dETE<br> 1 SS TT TT EE ETT<br>D = 0.50<br>S ST ee<br>a ee ee ee eee<br>0.20<br>S 0.10 S eee P DM<br>0.1 g e —— alll<br>0.05 t 1<br>e g ae |<br>0.02 SINGLE PULSE t 2<br>Pe 0.01 | (THERMAL RESPONSE) ee<br>o Baa e2c] ee a ee e 1. Duty factor D =Notes: e t   / t1 2<br>0.01 a lll 2. Peak T J = P DM x  Z thJC + T C<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>(Z        )thJC<br>Thermal Response<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>: 20VVGS tt<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


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2000<br>ID<br>PL EL [ELE] TOP 12A<br>21A<br>VEEL<br>1600 BOTTOM 30A<br>VEL EL [ELE]  |<br>E NG<br>1200800 PINEPILTONIN;EL| ft E tEe<br>400 PABA Pd<br>PSEARK I<br>0 Fit)| rr Ss<br>25 50 75 100 125 150 175<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br><_— tp + 0 | rr<br>25 50 75 100 125<br>/<br>/ \<br>Fig 12c.<br>y | Vs. Drain Current<br>IAS LD<br>VDSDS<br>Fig 12b.   Unclamped Inductive Waveforms<br>AS<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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AS<br>VDSDS<br> Unclamped Inductive Waveforms<br>+<br>VDD -<br>D.U.T<br>Current Regulator<br>Same Type as D.U.T. VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>50KΩ<br>12V .2µF<br>re .3µF |<br>Fig 14a.   Switching Time Test Circuit<br>~LLit + —<br>D.U.T. -VDS VDS<br>90%<br>VGS<br>3mA<br>10%<br>of|<br>IG ID V<br>GS<br>Current Sampling Resistors<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 13.** Gate Charge Test Circuit 

**Fig 14b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    • Circuit Layout Considerations | t V | GS=10V<br> •<br>| =] - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 +> VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( A •   dvidt controlled by Re Vpp - Inductor Curent<br>•   D.U.T. - Device Under Test es ee<br>Isp controlled by Duty Factor "D" ® Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 15.** Peak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® Power MOSFETs 

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Id<br>Vds f'<br>1 Vgs<br>I<br>1<br>1<br>1<br>1<br>I<br>1<br>|<br>H \<br>Vgs(th) !! \\<br>! \<br>! \<br>H \<br>H [\]<br>; ot | 1<br>1 H ! ' |<br>> <1 os) i tim<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 16.** Gate Charge Waveform 

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## **Power MOSFET Selection for Non-Isolated DC/DC Converters** 

## **Control FET** 

## **Synchronous FET** 

The power loss equation for Q2 is approximated by; 

_P = P + P + P + P loss conduction switching drive output_ 

This can be expanded and approximated by; 

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*dissipated primarily in Q1. 

For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant.  Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. 

The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of  Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Q /Q must be minimized to reduce the gd gs1 potential for Cdv/dt turn on. 

Figure A:  Qoss Characteristic 

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Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>_ 4 6.10 (.240) g<br>CFey CO “<br>15.24 (.600)<br>14.84 (.584)<br>1.15 (.045) LEAD ASSIGNMENTS<br>     MIN        1 - GATE<br>1     2    3        2 - DRAIN<br>       3 - SOURCE<br>       4 - DRAIN<br>| darrT<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X AP [1.40 (.055)] 3X [0.93 (.037)] 0.69 (.027) = 3X [0.55 (.022)] 0.46 (.018)<br>1.15 (.045) 0.36  (.014)        M    B   A   M<br>2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) - T<br>**----- End of picture text -----**<br>


2X 

NOTES: 

1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

EXAMPLE : T HIS  IS  AN IRF 1010 LOT  CODE  1789 AS S EMB LED ON WW 19, 1997 IN T HE  AS S E MBLY LINE "C" **Note:** "P" in assembly line position indicates "Lead-Free" 

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PART NUMBER<br>INTERNAT IONAL<br>RE CTIFIER<br>LOGO<br>DAT E CODE<br>YEAR 7 =  1997<br>AS SE MB LY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO T¢aR 002.<br>Note: "P" in assembly lineposition indicates "Lead-Free" ASSEMBLYLOT CODE 80 uT c an y Og24 DATE CODEYEAR 0 =  2000WEEK 02LINE L<br>**----- End of picture text -----**<br>


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PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TORPO02A\<br>80 2A DATE CODE<br>ASSEMBLYLOT CODE UT o an Y 6h YEAR 0 =  2000P =  DESIGNATES LEAD-FREEPRODUCT (OPTIONAL)<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO Ss IGaRIRL3103L719C<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL _————<br>RECTIFIER IRL3103L<br>LOGO IGRP719A<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>_ TRL j [|roLN tL f<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>cop‘ 16.10 (.634) i 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) IP<br>4<br>| 330.00 | 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I 4<br>3.   DIMENSION MEASURED @ HUB. 3<br>5 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.3mH, RG = 25Ω, IAS = 30A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

2) Calculated continuous current based on maximum allowable junction temperature. Package  limitation current  is 75A. © When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

This is only applied to TO-220AB package. 

## **TO-220AB package isnot recommended for Surface Mount Application.** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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