# Power MOSFET, N Channel, 40 V, 209 A, 1250 µohm, DirectFET ME, Surface Mount

![Product image](https://novapart.co/image/farnell:2577179/)

**URL**: https://novapart.co/products/IRL7486MTRPBF/power-mosfet-n-channel-40-v-209-a-1250-ohm
**SKU**: IRL7486MTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5310
**Stock**: 1000+
**Lead Time**: 155 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 2 - 1 year |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET Series |
| Qualification | - |
| Power Dissipation | 104W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET ME |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 209A |
| Drain Source On State Resistance | 1250µohm |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2577179/)

## ~~Caf eineon~~ 

## Strong _IR_ FET™ IRL7486MTRPbF ~~pe~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

-  Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Optimized for Logic Level Drive 

- Improved  Gate, Avalanche and Dynamic dv/dt Ruggedness 

-  Fully Characterized Capacitance and Avalanche SOA 

-  Enhanced body diode dv/dt and di/dt Capability 

- Lead-Free, RoHS Compliant 

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VDSS  40V<br>RDS(on) typ. 1.0m <br>            max<br>1.25m <br>@ VGS = 10V<br>RDS(on) typ. 1.5m <br>            max<br>2.0m <br>@ VGS = 4.5V<br>I 209A<br>D (Silicon Limited)<br>S<br>S S<br>S<br>D D<br>S S<br>ia G SN<br>DirectFET [®]  ISOMETRIC<br>ME<br>**----- End of picture text -----**<br>


|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRL7486MPbF|DirectFET®ME|Tape and Reel|4800|IRL7486MTRPbF|



**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratingsgss **||||||
|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**||||**Max.**<br>**Units**||
|ID @TC= 25°C<br>ContinuousDrainCurrent,VGS @10V(Silicon Limited)||||209||
|ID @TC= 100°C ContinuousDrainCurrent,VGS @10V(Silicon Limited)||||132<br>A||
|IDM<br>Pulsed Drain Current||||836||
|PD @TC= 25°C<br>Maximum Power Dissipation||||104<br>W||
|Linear DeratingFactor||||0.83<br>W/°C||
|VGS<br>Gate-to-Source Voltage||||± 20<br>V||
|TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range||||-55  to + 150<br>°C||
|**Avalanche Characteristics**||||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>80<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy <br>190<br>EAS (tested)<br>Single Pulse Avalanche EnergyTested Value<br>111<br>IAR<br>Avalanche Current <br>See Fig.15,16, 23a, 23b<br>A<br>EAR<br>RepetitiveAvalancheEnergy <br>mJ<br>**Thermal Resistance**<br>**Symbol **<br>**Parameter **<br>**Typ. **<br>**Max.**<br>**Units**<br>RJA<br>Junction-to-Ambient<br>–––<br>60<br> °C/W<br>RJA<br>Junction-to-Ambient<br>12.5<br>–––<br>RJA<br>Junction-to-Ambient<br>20<br>–––<br>RJC<br>Junction-to-Case<br>–––<br>1.2<br>RJ-PCB<br>Junction-to-PCB Mounted<br>0.75<br>–––<br>~~—eee~~||||||
|**Static @ TJ = 25°C (unless otherwise specified)**||||||
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient<br>–––<br>35<br>––– mV/°C Reference to 25°C, ID= 1.0mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>1.0<br>1.25<br>m<br>VGS= 10V, ID= 123A<br>–––<br>1.5<br>2.0<br>VGS= 4.5V, ID= 62A<br>VGS(th)<br>Gate Threshold Voltage<br>1.0<br>1.8<br>2.5<br>V<br>VDS= VGS, ID= 150µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µAVDS= 40V, VGS= 0V<br>–––<br>–––<br>150<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>VGS= 20V<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG<br>Internal Gate Resistance<br>–––<br>0.97<br>–––<br><br>~~==~~<br>~~— i~~||||||
|**Notes:**||||||
|Mounted on minimum footprint full size board with metalized|TC measured with thermocouple mounted to top (Drain) of part.|||||
|back and with small clip heatsink.||||||



-  Used double sided cooling , mounting pad with large heatsink. 

 Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 

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|<br>infineon||IRL7486MTRPbF|
|---|---|---|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**|||
|**Symbol **<br>**Parameter **<br>**Min. Typ. Max.Units**<br>gfs<br>ForwardTransconductance<br>427<br>–––<br>–––<br>S<br>Qg<br>TotalGate Charge<br>–––<br>76<br>111<br>nC<br>Qgs<br>Gate-to-Source Charge<br>–––<br>27<br>–––<br>Qgd<br>Gate-to-Drain("Miller") Charge<br>–––<br>33<br>–––<br>Qsync<br>TotalGate Charge Sync.(Qg-Qgd)<br>–––<br>41<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>35<br>–––<br>ns<br>tr<br>RiseTime<br>–––<br>110<br>–––<br>td(off)<br>Turn-Off DelayTime<br>–––<br>54<br>–––<br>~~PC~~<br>~~PC~~<br>~~eeen~~<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~eea~~||**Conditions**<br>VDS= 10V,ID= 123A<br>ID= 123A<br>VDS= 20V<br>VGS= 4.5V<br>ID= 123A,VDS=0V,VGS= 10V<br>VDD= 20V<br>ID= 30A<br>RG= 2.7<br>~~ee~~<br>~~PO~~|
|tf<br>Fall Time<br>–––<br>47<br>–––<br>Ciss<br>Input Capacitance<br>–––6904 –––<br>Coss<br>Output Capacitance<br>–––<br>939<br>–––<br>Crss<br>ReverseTransferCapacitance<br>–––<br>607<br>–––<br>Cosseff.(ER)Effective Output Capacitance(EnergyRelated)––– 1150 –––<br>Cosseff. (TR) Effective Output Capacitance (Time Related)<br>––– 1376 –––<br>~~I~~<br>~~a~~<br>~~a~~<br>~~I~~<br>~~ee~~<br>~~a OG~~|VGS= 4.5V<br>pF<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 32V<br>VGS= 0V, VDS= 0V to 32V<br>~~pC~~<br>~~;~~||
|**Diode Characteristics**|||
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>IS<br>Continuous Source Current<br>–––   –––   104<br>(BodyDiode)<br>ISM<br>Pulsed Source Current<br>–––   –––   836<br>(BodyDiode) <br>~~es~~<br>~~I~~<br>~~(OD (OR~~<br>~~fp~~|**. Max. Units**<br>A|D<br>S<br>G<br>**. Max. Units**<br>**Conditions**<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|
|VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>dv/dt<br>Peak Diode Recovery<br>–––<br>3.6<br>–––<br>V/ns<br>trr<br>Reverse Recovery Time<br>–––<br>43<br>–––<br>ns<br>–––<br>44<br>–––<br>~~ee~~<br>~~Is I~~<br>~~a~~<br>~~es ee ee~~||TJ= 25°C,IS=123A, VGS= 0V<br>TJ=150°C,IS=123A,<br>VDS= 40V<br>TJ= 25° C  VR= 34V,<br>TJ= 125°C IF= 123A|
|Qrr<br>Reverse Recovery Charge<br>–––<br>55<br>–––<br>–––<br>56<br>–––<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>2.1<br>–––<br>~~Pf~~<br>~~Sf~~<br>~~ee~~|nC<br>A|TJ= 25°C<br>di/dt = 100A/µs<br>TJ= 125°C<br>TJ= 25°C|



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 0.011mH 

- RG = 50, IAS = 123A, VGS =10V. 

-   ISD ≤ 123A, di/dt ≤ 1056A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. 

-  Pulse width ≤ 400µs; duty cycle ≤ 2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  This value determined from sample failure population, starting TJ = 25°C, L= 0.011mH, RG = 50, VGS =10V. 

-  Limited by TJmax, starting TJ = 25°C, L = 1.0mH RG = 50, IAS = 19.5A, VGS =10V. 

3 ~~ee~~ 

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IRL7486MTRPbF ~~Pp~~ 

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Cafineon<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Output Characteristics 

**Fig 5.** Typical Transfer Characteristics 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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IRL7486MTRPbF ~~Pp~~ 

**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 10.** Maximum Safe Operating Area 

**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

**Fig 13.** Typical On-Resistance vs. Drain Current 

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## IRL7486MTRPbF ~~Pp~~ 

**Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to- 

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Case<br>SSeed<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

- 1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax 

- (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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**Fig 17.** Threshold Voltage vs. Temperature 

**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRL7486MTRPbF ~~Fo~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VD S L DRIVER<br>R G D.U .T +<br>- [V][D D]<br>IA S<br>20V<br>tp 0.01 <br>**----- End of picture text -----**<br>


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I A S<br>**----- End of picture text -----**<br>


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V (B R )D S S<br>tp — ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th)<br>| \<br>Q gs1 Q gs2 Q gd Q godr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRL7486MTRPbF ~~Pp~~ 

## **DirectFET[®] Board Footprint, ME Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [346 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>A<br>D D<br>G<br>S S<br>!<br>A<br>S S S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRL7486MTRPbF 

## **DirectFET[®] Outline Dimension, ME Outline** 

## **(Medium Size Can, E-Designation)** 

Please see DirectFET[®] application note AN-1035 for all details regarding the assembly of DirectFET[®] . This includes all recommendations for stencil and  substrate designs. 

**==> picture [122 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
DIMENSIONS<br>METRIC IMPERIAL<br>CODE MIN MAX MIN MAX<br>A 6.25 6.35 0.246 0.250<br>B 4.80 5.05 0.189 0.199<br>C 3.85 3.95 0.152 0.156<br>D 0.35 0.45 0.014 0.018<br>E 0.58 0.62 0.023 0.024<br>F 1.08 1.12 0.043 0.044<br>G 0.93 0.97 0.037 0.038<br>H 1.28 1.32 0.050 0.052<br>J 0.38 0.42 0.015 0.017<br>J1 0.58 0.62 0.023 0.024<br>K 0.88 0.92 0.035 0.036<br>L 2.08 2.12 0.082 0.083<br>L1 3.63 3.67 0.143 0.144<br>M 0.59 0.70 0.023 0.028<br>N 0.02 0.08 0.0008 0.003<br>P 0.08 0.17 0.003 0.007<br>**----- End of picture text -----**<br>


## **DirectFET[® ] Part Marking** 

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**----- Start of picture text -----**<br>
LOGO<br>GATE MARKING<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRL7486MTRPbF ~~P|~~ 

## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation).** 

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LOADED TAPE FEED DIRECTION<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
NOTE: Controlling dimensions in mm<br>DIMENSIONS Std reel quantity is 4800 parts. Ordered as IRL7486MTRPBF.<br>METRIC IMPERIAL<br>NOTE: CONTROLLINGDIMENSIONS IN MM CODE A  7.90 MIN  MAX 8.10 0.311 MIN 0.319 MAX STANDARD OPTION  REEL DIMENSIONS(QTY 4800)<br> B  3.90  4.10 0.154 0.161 METRIC IMPERIAL<br> C 11.90 12.30 0.469 0.484 CODE  MIN  MAX  MIN  MAX<br>  A 330.0  N.C 12.992  N.C<br> D  5.45  5.55 0.215 0.219<br>  B  20.2  N.C 0.795  N.C<br> E  5.10  5.30 0.201 0.209<br>  C  12.8  13.2 0.504 0.520<br> F  6.50  6.70 0.256 0.264   D   1.5  N.C 0.059  N.C<br> G  1.50  N.C 0.059  N.C   E 100.0  N.C 3.937  N.C<br> H  1.50  1.60 0.059 0.063   F   N.C  18.4  N.C 0.724<br>  G  12.4  14.4 0.488 0.567<br>  H  11.9  15.4 0.469 0.606<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR webite at http://www.irf.com/package/ 

## **Qualification Information** 

|**Qualification Informationlification Informationcation Informationion Informationon Informationn Informationormationrmationationiononn**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F†guidelines)||
|**Moisture Sensitivity Level**|DFET 1.5|MSL1<br>(per JEDEC J-STD-020D†)|
|**RoHS Compliant**|Yes||



- Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Rev.**||**Comments**|
|---|---|---|---|
|05/14/2015|2.1||Updated registered trademark from  DirectFETTMto DirectFET®on page 1,9 and 10.|
|07/01/2021|2.2||Updated Eas notes|



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IRL7486MTRPbF ~~_—“— |~~ **Trademarks of Infineon Technologies AG** HHVIC™, LIPM™, UPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLIR™, CoolMOS™, CoolSET™, CoolSiC™, - GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

Edition 2016-04-19 **IMPORTANT NOTICE** For further information on the product, technology, **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies ofice **Infineon Technologies AG** www.infineon.com 81726 Munich, Germany With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified © 2016 Infineon Technologies AG. regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **WARNINGS document?** Due to technical requirements products may **Email:** erratum@infineon.com In addition, any information given in this contain dangerous substances. For information on document **is subject to customer’s compliance** the types in question please contact your nearest **with its** obligations stated in this document and Infineon Technologies ofice. any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and Except as otherwise explicitly approved by Infineon ifx1 any use of the product of Infineon Technologies in Technologies in a written document signed by **customer’s applications.** authorized representatives of Infineon Technologies, **Infineon Technologies’ products** The data contained in this document is exclusively **may** not be used in any applications where a intended for technically trained staf. It is the **responsibility of customer’s technical** failure of the product or any consequences of the use thereof can reasonably be expected to result in **departments** to evaluate the suitability of the personal injury. product for the intended application and the completeness of the product information given in this document with respect to such application. 

12 

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