# Dual MOSFET, N Channel, 30 V, 8.1 A, 0.014 ohm

![Product image](https://novapart.co/image/farnell:1888167/)

**URL**: https://novapart.co/products/IRL6372PBF/dual-mosfet-n-channel-30-v-81-a-0014-ohm
**SKU**: IRL6372PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Dual MOSFETs
**Price**: €0.2390
**Stock**: 10+

## Description

Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Transistor Case Style | SOIC |
| Operating Temperature Max | 150°C |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | - |
| Drain Source Voltage Vds N Channel | 30V |
| Drain Source Voltage Vds P Channel | - |
| Continuous Drain Current Id N Channel | 8.1A |
| Continuous Drain Current Id P Channel | - |
| Drain Source On State Resistance N Channel | 0.014ohm |
| Drain Source On State Resistance P Channel | - |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1888167/)

## IRL6372PbF 

## HEXFET ® Power MOSFET 

|**VDS**<br>~~a~~|**30**<br>~~a~~|**V**<br>~~a~~|
|---|---|---|
|**VGS**|**±12**|**V**|
|**RDS(on) max**<br>(@VGS= 4.5V)|**17.9**|**m**Ω|
|**Qg (typical)**|**11**|**nC**|
|**g(yp)**<br>**ID**<br>(@TA=  25°C)|**8.1**|**A**|



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## **Applications** 

- 

- 

- 

## **Features and Benefits** 

## **Features** 

Industry-Standard SO-8 Package 

RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification 

⇒ 

## **Resulting Benefits** 

Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability 

|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRL6372PBF|SO-8|Tube/Bulk|**Quantity**<br>95||
|IRL6372TRPBF|SO-8|Tape and Reel|4000||



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~es~~|30<br>~~es~~|V|
|VGS|Gate-to-Source Voltage<br>~~ee~~|±12<br>~~ee~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V<br>~~ee~~|8.1<br>~~ee~~|A|
|ID@ TA= 70°C<br>~~a~~|Continuous Drain Current, VGS@ 4.5V<br>~~ee~~<br>~~a~~|6.5<br>~~ee~~||
|IDM<br>~~a~~<br>~~a~~|Pulsed Drain Current<br>~~a~~<br>~~a~~|65||
|PD@TA= 25°C<br>~~a~~<br>~~a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~<br>~~a~~|2.0<br>|W|
|PD@TA= 70°C<br>~~a~~<br>~~a~~|Power Dissipation<br>~~a~~<br>~~a~~|1.3<br>||
|~~a~~|Linear Derating Factor<br>~~aee~~|0.02<br>~~ee~~|W/°C|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 150<br>~~ee~~|°C|



> Notes ® through ) are on page 2 

www.irf.com 

1 

01/17/2011 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max.**<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~(OR~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~GN~~|30<br>~~GN~~<br>~~GD~~|–––<br>~~GN~~<br>~~PR~~|–––<br>~~GN~~<br>~~QO~~<br>~~ID~~|V<br>~~GN~~<br>~~QO~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~GN~~<br>~~(OR~~<br>~~(OO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~en~~|–––<br>~~en~~<br>~~GD~~|23<br>~~en~~<br>~~PR~~|–––<br>~~QO~~<br>~~en~~<br>~~ID~~|mV/°C<br>~~QO ~~<br>~~en~~<br>~~QO~~|Reference to 25°C, ID= 1mA<br> ~~(OR~~<br>~~en~~<br>~~(OO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~GD ~~<br>~~ee~~<br>~~ee~~|14.0<br> ~~PR~~<br>~~ee~~<br>~~ee~~|17.9<br>~~ID~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~QO ~~<br>~~ee~~<br>~~ee~~|VGS= 4.5V, ID= 8.1A<br> ~~(OO~~<br>~~ee~~<br>~~®~~|
|||–––<br>~~ee~~<br>~~ee~~|17.0<br>~~ee~~<br>~~ee~~|23.0<br>~~ee~~<br>~~ee~~||VGS= 2.5V, ID= 6.5A<br>~~ee~~<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~Sa~~|0.5<br>~~ee ~~<br>~~Sa~~|–––<br> ~~ee ~~|1.1<br> ~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 10µA<br>~~®~~<br>~~EE~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~DQ~~|–––<br>~~DQ~~<br>~~a~~|-4.0<br>~~DQ~~|–––<br>~~DQ~~<br>~~EE~~|mV/°C<br>~~DQ~~<br>~~EE~~||
|IDSS|Drain-to-Source Leakage Current<br>~~Ee~~|–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~ee~~|1.0<br>~~Ee~~<br>~~EE~~|µA<br>~~Ee~~<br>~~EE~~|VDS= 24V, VGS= 0V<br>~~Ee~~<br>~~EE~~|
|||–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~ee~~|150<br>~~Ee~~<br>~~EE~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~Ee~~<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~Ee~~|–––<br>~~Ee~~<br>~~a~~|–––<br>~~Ee~~<br>~~ee~~|100<br>~~Ee~~<br>~~EE~~|nA<br>~~Ee~~<br>~~EE~~<br>~~QO~~|VGS= 12V<br>~~Ee~~<br>~~EE~~|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br>~~a~~<br>~~Rs~~|–––<br>~~a~~<br>~~ID~~|-100<br>~~a~~<br>~~QO~~||VGS= -12V<br>~~(O~~|
|gfs|Forward Transconductance<br>~~a~~<br>~~PD~~|30<br>~~a~~<br>~~PD~~<br>~~Rs~~|–––<br>~~a~~<br>~~PD~~<br>~~ID~~|–––<br>~~a~~<br>~~PD~~<br>~~QO~~|S<br>~~PD~~<br>~~QO~~|VDS= 10V, ID= 6.5A<br>~~PD~~<br>~~(O~~|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~Rs ~~<br>~~es~~|11<br> ~~ID~~<br>~~es~~|–––<br>~~QO~~<br>~~es~~|nC<br>~~QO ~~<br>~~OO~~|VGS= 4.5V<br>VDS= 15V<br>ID= 6.5A<br> ~~(O~~<br>~~(OO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~Qs~~|–––<br>~~Qs~~<br>~~(~~|0.01<br>~~Qs~~<br>~~(~~|–––<br>~~Qs~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~(~~|0.50<br>~~es~~<br>~~(~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~Qs~~|–––<br>~~(~~<br>~~Qs~~<br>~~(~~|4.8<br>~~(~~<br>~~Qs~~<br>~~(~~|–––<br>~~Qs~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~<br>~~(~~|5.69<br>~~es~~<br>~~(~~|–––<br>~~es~~|||
|Qsw<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>~~Qs~~<br>~~a~~|–––<br>~~(~~<br>~~Qs~~<br>~~GON~~|5.3<br>~~(~~<br>~~Qs~~<br>~~GRD~~|–––<br>~~Qs~~<br>~~ID~~|||
|RG<br>~~a~~|Gate Resistance<br>~~en~~<br>~~a~~|–––<br>~~en~~<br>~~GON~~|2.2<br>~~en~~<br>~~GRD~~|–––<br>~~en~~<br>~~ID~~|Ω<br>~~en~~<br>~~OO~~|~~en~~<br>~~(OO~~|
|td(on)<br>~~a~~|Turn-On DelayTime<br>~~a~~|–––<br>~~GON~~|5.9<br>~~GRD~~|–––<br>~~ID~~|ns<br> ~~OO ~~|See Figs. 18<br>RG= 6.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 6.5A<br> ~~(OO~~<br>@|
|tr<br>~~a~~|Rise Time<br>~~a~~<br>~~Qs~~|–––<br>~~GON ~~<br>~~Qs~~<br>~~(~~|13<br> ~~GRD ~~<br>~~Qs~~<br>~~(~~|–––<br> ~~ID ~~<br>~~Qs~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~(~~|34<br>~~es~~<br>~~(~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~Qs~~|–––<br>~~(~~<br>~~Qs~~<br>~~(~~|15<br>~~(~~<br>~~Qs~~<br>~~(~~|–––<br>~~Qs~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~(~~|1020<br>~~es~~<br>~~(~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V|
|Coss|Output Capacitance<br>~~Qs~~|–––<br>~~(~~<br>~~Qs~~|98<br>~~(~~<br>~~Qs~~|–––<br>~~Qs~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|68<br>~~ee~~|–––<br>~~ee~~|||



Repetitive rating;  pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 ich square copper board. 

R θ is measured at TJ of approximately 90°C. 

www.irf.com 

2 

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100<br>VGS<br>TOP           10V<br>4.5V<br>3.5V<br>2.5V<br>10 S LM Tr | 2.0V<br>1.8V<br>1.5V<br>BOTTOM 1.3V<br>1 C L | il<br>ema ≤ 60µs PULSE WIDTH<br>0.1 Tj = 25°C<br>1.3V<br>0.01 coatPenannies<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100<br>ee ee ee ee eee<br>T = 150°C<br>J<br>10 3a w / A tt<br>ey 0 ee ee ee eee<br>TJ = 25°C<br>1 v s a<br>2 ee ee ee<br>VDS = 15V<br>0.1 V_[iJie| ≤ 60µs PULSE WIDTH<br>1.0 1.5 2.0 2.5 3.0 3.5<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>F - oss   ds  gd E<br>C<br>1000 — iss<br>So oo<br>Se Coss eeere<br>Crss<br>100 SOPSa PESA HEEEHHTIeea a!<br>10 aee ee ll<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           10V<br>4.5V<br>3.5V<br>2.5V<br>7 || 2.0V<br>1.8V<br>10 1.5V<br>BOTTOM 1.3V<br>Yo<br>1 a | |<br>1.3V<br>≤ 60µs PULSE WIDTH<br>0.1 aie Bn | Tj = 150°C eT<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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ID = 8.1A<br>1.6 VGS = 4.5V )<br>LLL<br>1.4 YA<br>1.2 L LYZ|<br>1.0 wa<br>0.8 T EE ELL<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 6.5A<br>12.0<br>VDS= 24V<br>a= VDS= 15V oy"<br>10.0<br>VDS= 6.0V<br>2<br>fo<br>8.0<br>6.0<br>a 4<br>4.0<br>2.00.0 |a—r ” y nyi 7 | y  Ae| | | ff | if<br>0 5 10 15 20 25 30<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100<br>TJ = 150°C<br>T = 25°C<br>J<br>10<br>PP AP<br>VGS = 0V<br>1.0 Sieh ft |<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>1 00µ sec<br>1msec<br>10msec<br>10<br>DC<br>1 I C r S n<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1 RHE FH<br>0.1 1.0 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>1.4<br>1.2<br>P RT TT<br>FessSSeiilessSSeiil<br>1.0<br>ASSES<br>0.8<br>B ERSUE<NE<br>ID = 10µAD = 10µA = 10µA<br>0.6 ID = 250µAD = 250µA = 250µA PALNS<br>ID = 1.0mAD = 1.0mA = 1.0mA<br>0.4<br>CIN<br>0.2 PEL LELLEL LELL LELLL E LLINO<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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9 1.4<br>8<br>1.2<br>7<br>m I P RT<br>P P FessSSeiilessSSeiil<br>6 1.0<br>5 e s a ASSES<br>0.8<br>a B ERSUE<NE<br>4<br>ID = 10µAD = 10µA = 10µA<br>3 e e 0.6 ID = 250µAD = 250µA = 250µA<br>ID = 1.0mAD = 1.0mA = 1.0mA<br>2<br>0.4<br>1 t t<br>0 es 0.2 PEL LELLEL LELL LELLL E<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs.<br>Fig 10.   Threshold Voltage vs. Temperature<br>Case (Bottom) Temperature<br>100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>0.01 Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthja + TA<br>P e  cm pail PETE HEP |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

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40 70<br>ID = 8.1A<br>35<br>60<br>30<br>50<br>Pee} | Ee<br>25 Vgs = 2.5V<br>TJ = 125°C 40<br>20<br>30<br>15 \eeanneen et] | VC<br>20 Vgs = 4.5V<br>10 T = 25°C<br>ianunaaaeee J  | Ty t<br>CECE | aee<br>5 10<br>LL EEE SSELT I<br>1 2 3 4 5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>ID, Drain Current (A)<br>VGS, Gate -to -Source Voltage  (V)<br>Fig 12.  On-Resistance vs. Gate Voltage Fig 13.   Typical On-Resistance vs. Drain Current<br>250 25000<br>ID<br>TOP         1.2A<br>200 1.8A 20000<br>BOTTOM 6.5A<br>\ \<br>150 15000<br>N \ \<br>100 10000<br>50 5000<br>T BSee I LlICHUlICHUCHU<br>0 0<br>TS. its<br>25 50 75 100 125 150 1E-8 1E-7 1E-6 1E-5 1E-4<br>Starting TJ , Junction Temperature (°C) Time (sec)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>EAS , Single Pulse Avalanche Energy (mJ)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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25000<br>20000<br>\<br>15000<br>\<br>10000<br>5000<br>I LlICHUlICHUCHU<br>0<br>its<br>1E-8 1E-7 1E-6 1E-5 1E-4 1E-3<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Power vs. Time 

**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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Driver Gate Drive<br>P.W.<br>D.U.T + +——— P.W. Period — — D = —— Period<br>VGS=10<br>’    •  |<br> •<br>Pp ©) - Circuit  •   GroundLowLayout Leakage PlaneConsiderationsInductance 2) D.U.T. ISD Waveform |<br>+<br>Reverse<br>Recovery Body Diode Forward<br>® - a = Current Transformer - ® + Current r Current = di/dt /<br>00 ® D.U.T. VDS Waveform Diode Recoverydv/dt \ —7<br>VDD<br>•  Re-Applied<br>•   + Voltage Body Diode  Forward Drop<br>Ro ( 4 •   widteontolled byRe out Vop - Inductor Curent re<br>•<br>D.U.T. - Device Under Test es ee<br>® Ripple  ≤ 5% ISD<br>Iopcontoled [by][ Duty][ Factor "D"]<br>**----- End of picture text -----**<br>


**Fig 16.** 

or N-Channel 

HEXFET ® ower MOSFETs 

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L<br>VCC<br>DUT<br>0<br>1K S<br>nel<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ve 20V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 18a.** Unclamped Inductive Test Circuit 

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 1<br> 0.1<br>**----- End of picture text -----**<br>


**Fig 19a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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V(BR)DSS<br><e— tp —><br>/<br>/ |<br>/ |<br>IAS<br>Fig 18b.<br>V<br>DS<br>90% J<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Unclamped Inductive Waveforms 

**Fig 19b.** Switching Time Waveforms 

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6 

Dimensions are shown in milimeters (inches) 

## **SO-8 Part Marking Information** 

http://www.irf.com/package/ 

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## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>oO oO 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) _ FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|SO-8|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



i http://www.irf.com/product-info/reliability ne 

Qualification standards can be found at International Rectifier’s web site 

- Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: 

http://www.irf.com/whoto-call/salesrep/ 

Hoo Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2011 

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8 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL6372PBF/dual-mosfet-n-channel-30-v-81-a-0014-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl6372pbf/mosfet-nn-ch-w-diode-30v-8-1a/dp/1888167)
---

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> [Request a quote](https://novapart.co/quote/) — it's free and there's no
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