# Power MOSFET, N Channel, 30 V, 9.9 A, 0.0146 ohm, SOIC, Surface Mount

![Product image](https://novapart.co/image/farnell:2148090/)

**URL**: https://novapart.co/products/IRL6342TRPBF/power-mosfet-n-channel-30-v-99-a-00146-ohm-soic
**SKU**: IRL6342TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2910
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.1V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 8Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2.5W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 4.5V |
| Transistor Case Style | SOIC |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 9.9A |
| Drain Source On State Resistance | 0.0146ohm |
| Gate Source Threshold Voltage Max | 1.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2148090/)

## IRL6342PbF 

HEXFET Power MOSFET 

|**VDS**|**30**|**V**|
|---|---|---|
|**VGS**|**±12**|**V**|
|**RDS(on) max**<br>(@VGS= 4.5V)|**14.6**|**m**Ω|
|**Qg (typical)**|**11**|**nC**|
|**ID**<br>(@TA=  25°C)|**9.9**|**A**|



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## **Applications** 

- 

- 

## **Features and Benefits** 

**Features** Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification 

## **Resulting Benefits** 

Multi-Vendor Compatibility ⇒ Environmentally Friendlier Increased Reliability 

|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRL6342PBF|SO-8|Tube/Bulk|**Quantity**<br>95||
|IRL6342TRPBF|SO-8|Tape and Reel|4000||



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~pe~~|Drain-to-Source Voltage<br>~~pe|~~|30<br>~~|~~|V<br>~~|~~|
|VGS<br>~~pe~~|Gate-to-Source Voltage<br>~~pe|~~<br>~~oo~~|±12<br>~~|~~<br>~~oo~~||
|ID@ TA= 25°C|Continuous Drain Current, VGS@ 4.5V<br>~~oo~~|9.9<br>~~oo~~|A<br>|
|ID@ TA= 70°C<br>~~ee~~|Continuous Drain Current, VGS@ 4.5V<br>~~oo~~<br>~~a~~<br>~~ee~~|7.9<br>~~oo~~<br>~~a~~<br>||
|IDM<br>~~ee~~|Pulsed Drain Current<br>~~oo~~<br>~~ee~~|79<br>~~oo~~<br>||
|PD@TA= 25°C<br>~~ee~~|Power Dissipation<br>~~oo~~<br>~~eeSS~~|2.5<br>~~oo~~<br>~~SS~~|W<br>~~SS~~|
|PD@TA= 70°C<br>|Power Dissipation<br>~~SS~~<br>~~a~~|1.6<br>~~SS~~<br>~~a~~||
||Linear Derating Factor|0.02<br>~~ee~~|W/°C<br>~~ee~~|
|TJ<br>TSTG|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 150<br>~~a~~<br>~~ee~~|°C<br>~~ee~~|



> Notes ® through ) are on page 2 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~ID~~|**Typ.**<br>~~DO~~|**Max.**<br>~~DO~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|30<br>~~RD~~<br>~~ID~~<br>~~RD~~|–––<br>~~RD~~<br>~~DO~~|–––<br>~~RD~~<br>~~DO~~<br>~~(QO~~|V<br>~~RD~~<br>~~QO~~<br>~~(QO~~|VGS= 0V, ID= 250µA<br>~~RD~~<br>~~QO~~<br>~~(QO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~RD~~<br>~~eS~~|–––<br>~~RD~~<br>~~ID ~~<br>~~eS~~<br>~~RD~~|22<br>~~RD~~<br> ~~DO~~<br>~~eS~~|–––<br>~~RD~~<br>~~DO~~<br>~~eS~~<br>~~(QO~~|mV/°C<br>~~RD~~<br>~~QO ~~<br>~~eS~~<br>~~(QO~~|Reference to 25°C, ID= 1mA<br>~~RD~~<br> ~~QO~~<br>~~eS~~<br>~~(QO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~a]~~|–––<br>~~RD~~<br>~~ee~~<br>~~es~~|12.0<br>~~ee~~<br>~~eee~~|14.6<br>~~(QO~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~(QO~~<br>~~ee~~|VGS= 4.5V, ID= 9.9A<br>~~(QO~~<br>~~ee~~<br>~~®~~|
|||–––<br>~~ee~~<br>~~es~~<br>~~]~~|15.0<br>~~ee~~<br>~~eee~~<br>~~]~~|19.0<br>~~ee~~<br>~~ee~~<br>~~]~~||VGS= 2.5V, ID= 7.9A<br>~~ee~~<br>~~®~~<br>~~—™”~~|
|VGS(th)|Gate Threshold Voltage<br>~~a]~~|0.5<br>~~es ~~<br>~~]~~|–––<br> ~~eee ~~<br>~~]~~|1.1<br> ~~ee~~<br>~~]~~|V|VDS= VGS, ID= 10µA<br>~~®~~<br>~~—™”~~|
|∆VGS(th)|Gate Threshold Voltage Coefficient<br>~~a]~~<br>~~es~~|–––<br>~~]~~<br>~~es~~|-4.2<br>~~]~~<br>~~es~~|–––<br>~~]~~<br>~~es~~|mV/°C<br>~~es~~||
|IDSS|Drain-to-Source Leakage Current<br>~~a]~~<br>~~es~~<br>~~EE~~|–––<br>~~]~~<br>~~es~~<br>~~EE~~<br>~~a~~|–––<br>~~]~~<br>~~es~~<br>~~EE~~<br>~~ee~~|1.0<br>~~]~~<br>~~es~~<br>~~EE~~<br>~~ee~~|µA<br>~~es~~<br>~~EE~~<br>~~ee~~<br>~~A~~|VDS= 24V, VGS= 0V<br>~~—™”~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~a~~|–––<br>~~EE~~<br>~~ee~~<br>~~A~~|150<br>~~EE~~<br>~~ee~~<br>~~A~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~**a**~~|–––<br>~~a~~<br>~~**a**~~|–––<br>~~ee ~~<br>~~**a**~~<br>~~A~~|100<br> ~~ee~~<br>~~**a**~~<br>~~A~~|nA<br>~~ee~~<br>~~**a**~~<br>~~A~~<br>~~DO~~|VGS= 12V<br>~~**a**~~|
||Gate-to-Source Reverse Leakage<br>~~**a**~~|–––<br>~~**a**~~|–––<br>~~**a**~~<br>~~A~~<br>~~(RD~~|-100<br>~~**a**~~<br>~~A~~<br>~~DO~~||VGS= -12V<br>~~**a**~~<br>~~(O~~|
|gfs|Forward Transconductance<br>~~DG~~|38<br>~~DG~~|–––<br>~~A~~<br>~~DG~~<br>~~(RD~~|–––<br>~~A~~<br>~~DG~~<br>~~DO~~|S<br>~~A~~<br>~~DG~~<br>~~DO~~|VDS= 10V, ID= 7.9A<br>~~DG~~<br>~~(O~~|
|Qg|Total Gate Charge|–––|11<br>~~(RD ~~<br>~~(~~|–––<br> ~~DO~~|nC<br>~~DO ~~<br>~~IDQOD~~|VGS= 4.5V<br>VDS= 15V<br>ID= 7.9A<br> ~~(O~~<br>~~(OO~~|
|Qgs1|Pre-Vth Gate-to-Source Charge|–––|0.01<br>~~(~~|–––|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|0.60<br>~~(~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~GO~~|–––<br>~~GO~~|4.6<br>~~GO~~|–––<br>~~GO~~|||
|Qgodr|Gate Charge Overdrive<br>~~es~~|–––<br>~~es~~|5.79<br>~~es~~|–––<br>~~es~~|||
|Qsw<br>~~a~~|Switch Charge(Qgs2+ Qgd)<br>~~GO~~<br>~~a~~|–––<br>~~GO~~<br>~~GON~~|5.2<br>~~GO~~<br>~~(RD~~|–––<br>~~GO~~<br>~~IDQOD~~|||
|RG<br>~~a~~|Gate Resistance<br>~~RD~~<br>~~a~~|–––<br>~~RD~~<br>~~GON~~|2.0<br>~~RD~~<br>~~(RD~~|–––<br>~~RD~~<br>~~IDQOD~~|Ω<br>~~RD~~<br>~~IDQOD~~|~~RD~~<br>~~(OO~~|
|td(on)<br>~~a~~|Turn-On DelayTime<br>~~a~~|–––<br>~~GON~~|6.0<br>~~(RD~~|–––<br>~~IDQOD~~|ns<br>~~IDQOD~~|RG= 6.8Ω<br>VDD= 15V, VGS= 4.5V<br>ID= 7.9A<br>See Figs. 18<br>~~(OO~~<br>@|
|tr<br>~~a~~|Rise Time<br>~~a~~<br>~~GO~~|–––<br>~~GON ~~<br>~~GO~~|12<br> ~~(RD ~~<br>~~GO~~|–––<br> ~~IDQOD~~<br>~~GO~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|33<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ss~~|–––<br>~~ss~~<br>~~Ps~~|14<br>~~ss~~|–––<br>~~ss~~|||
|Ciss|Input Capacitance<br>~~ss~~<br>~~es~~|–––<br>~~ss~~<br>~~es~~<br>~~Ps~~|1025<br>~~ss~~<br>~~es~~|–––<br>~~ss~~<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V|
|Coss|Output Capacitance<br>~~GO~~|–––<br>~~Ps~~<br>~~GO~~<br>~~GO~~|97<br>~~GO~~|–––<br>~~GO~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~GO~~|70<br>~~es~~|–––<br>~~es~~|||



Repetitive rating;  pulse width limited by max. junction temperature. 

> Pulse width ≤ 400µs; duty cycle ≤ 2%. 

When mounted on 1 ich square copper board. 

R θ is measured at TJ of approximately 90°C. 

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100<br>VGS<br>TOP           10V<br>4.5V<br>3.5V<br>2.5V<br>10 2.0V<br>1.8V<br>1.5V<br>BOTTOM 1.3V<br>1<br>≤ 60µs PULSE WIDTH<br>niin nen<br>0.1 Tj = 25°C<br>__ 1.3V mr<br>0.01 re<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>100<br>S o<br>10 a TJ = 150°C a<br>SS<br>pf a<br>T = 25°C<br>1 [| J<br>f f ,  _| __|<br>a VDS = 10V<br>≤ 60µs PULSE WIDTH<br>Tt<br>0.1<br>1.0 1.5 2.0 2.5 3.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>_ oss   ds  gd<br>1000 SS<br>C<br>iss<br>C<br>oss<br>PSR| HH<br>100<br>C<br>a rss t| Se<br>10 Perr Er<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           10V<br>4.5V<br>3.5V<br>2.5V<br>2.0V<br>1.8V<br>10 1.5V<br>BOTTOM 1.3V<br>1<br>P 1.3V ETCEU TT<br>| LT ≤ 60µs PULSE WIDTH<br>Tj = 150°C<br>0.1 TMM LLU<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>2.0<br>ID = 9.9A<br>1.8 V GS = 4.5V<br>L ED<br>1.6<br>SERRE<br>1.4<br>2<br>B RRRREEEZER<br>1.2<br>T ELL<br>1.0<br>t it<br>0.8<br>t AThetLEEEL ELL<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID= 7.9A<br>12.0<br>VDS= 24V<br>VDS= 15V SY<br>10.0<br>VDS= 6.0V =a<br>8.0<br>6.0 ( Af||<br>fry<br>4.0 | | i<br>2.00.0 rte}| | lt<br>0 5 10 15 20 25 30<br> QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100<br>T = 150°C<br>J<br>T = 25°C<br>J<br>10<br>VGS = 0V<br>1.0<br>PvE<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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10<br>8<br>SS eenNe<br>6<br>4 P N<br>2<br>P EN)<br>0<br>|| ft | |<br>25 50 75 100 125 150<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case (Bottom) Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>1 00µ sec<br>1msec<br>10msec<br>10<br>DC<br>1<br>TA = 25°C<br>Tj = 150°C<br>Single Pulse<br>0.1 ism ica t<br>0.1 1.0 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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1.4<br>1.2<br>P RT<br>1.0<br>TT<br>0.8<br>RE ID = 10µA ST<br>0.6 LEB ID = 250µA RRSS<br>ID = 1.0mA<br>A SS<br>0.4 OL<br>0.2<br>T TTBERNETEN<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>sep sis cme cen Ee ER Et<br>0.1<br>0.01 Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthja + TA<br>aa ee ee<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 

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40<br>ID = 9.9A<br>35 titty<br>30<br>25<br>2015 WN Ai.= TT TJ = 125 ° C LUTT<br>REET<br>10<br>TJ = 25°C<br>5 BERR<br>1 2 3 4 5 6 7 8 9 10 11 12<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


VGS, Gate -to -Source Voltage  (V) **Fig 12.** On-Resistance vs. Gate Voltage 

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40<br>BEERS<br>35<br>30<br>Vgs = 2.5V<br>25<br>|<br>20<br>/ /<br>Vgs = 4.5V<br>EEPA nET A<br>15<br>titer<br>10<br>y | |<br>0 10 20 30 40 50 60 70 80<br>ID, Drain Current (A)<br>) Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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250<br>ID<br>TOP         1.3A<br>200 1.9A<br>BOTTOM 7.9A<br>150<br>X<br>100<br>C HEE<br>50<br>EA<br>P SSST<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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30000<br>25000<br>20000<br>15000<br>a<br>S O<br>10000<br>5000<br>T NT<br>THTTT<br>0<br>1E-8 1E-7 1E-6 1E-5 1E-4 1E-3<br>Time (sec)<br>Power (W)<br>**----- End of picture text -----**<br>


## **Fig 15.** Typical Power vs. Time 

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Driver Gate Drive<br>P.W.<br>Period D =<br>D.U.T + ¢$——— P.W. — — —_—— Period<br>’ [©)] Circuit    •  Layout Considerations | V | GS=10<br> •<br>| -  •   LowCow StrayLeakane Inductance Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>ar - [l] Current Transformer - ® + Current r Current di/dt AN<br>00 1) D.U.T. VDS Waveform Diode Recoverydv/dt \ ><br>VDD<br>•  Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   vidt controlled by Rg Vop - Inductor Curent ce<br>•<br>D.U.T. - Device Under Test es<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @)<br>**----- End of picture text -----**<br>


**Fig 16.** 

or N-Channel 

ower MOSFETs 

HEXFET 

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L<br>VCC<br>DUT<br>0<br>1K S<br>nel<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>ve 20V<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 18a.** Unclamped Inductive Test Circuit 

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 1<br> 0.1<br>**----- End of picture text -----**<br>


**Fig 19a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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V(BR)DSS<br><e— tp —><br>/<br>/ |<br>/ |<br>IAS<br>Fig 18b.<br>V<br>DS<br>90% J<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Unclamped Inductive Waveforms 

**Fig 19b.** Switching Time Waveforms 

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Dimensions are shown in milimeters (inches) 

## **SO-8 Part Marking Information** 

http://www.irf.com/package/ 

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## **SO-8 Tape and Reel** 

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TERMINAL NUMBER 1<br>oO oO 6<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) _ FEED DIRECTION<br>|  330.00<br>(12.992)<br>  MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>**----- End of picture text -----**<br>


NOTES: 

1.   CONTROLLING DIMENSION : MILLIMETER. 

2.   ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 

3.   OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. CONTROLLING DIMENSION : MILLIMETER. 

2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 

## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|SO-8|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



i http://www.irf.com/product-info/reliability ne 

Qualification standards can be found at International Rectifier’s web site 

- Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: 

http://www.irf.com/whoto-call/salesrep/ 

Hoo Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2011 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL6342TRPBF/power-mosfet-n-channel-30-v-99-a-00146-ohm-soic)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl6342trpbf/mosfet-n-ch-30v-9-9a-8soic/dp/2148090)
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