# Power MOSFET, N Channel, 60 V, 298 A, 1950 µohm, TO-262, Through Hole

![Product image](https://novapart.co/image/farnell:3514440/)

**URL**: https://novapart.co/products/IRL60SL216/power-mosfet-n-channel-60-v-298-a-1950-ohm-to-262
**SKU**: IRL60SL216
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €3.0000
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET HEXFET Series |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 298A |
| Drain Source On State Resistance | 1950µohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3514440/)

IR MOSFET Strong _IR_ FET™ IRL60S216 IRL60SL216 

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Application  HEXFET [® ] Power MOSFET<br> Brushed Motor drive applications<br> BLDC Motor drive applications  D VDSS  60V<br>Battery powered circuits  RDS(on) typ. 1.6m <br> Half-bridge and full-bridge topologies               max  1.95m <br> Synchronous rectifier applications  G<br> Resonant mode power supplies  ID (Silicon Limited)  298A <br>S<br> OR-ing and redundant power switches<br> DC/DC and AC/DC converters  == ID (Package Limited)  195A<br> DC/AC Inverters<br>D  D<br>Benefits  S  S<br> Optimized for Logic Level Drive  G  G  [D ]<br> Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness<br>D [2] Pak  TO-262<br> Fully Characterized Capacitance and Avalanche SOA  IRL60S216  IRL60SL216<br> Enhanced body diode dV/dt and dI/dt Capability<br> Lead-Free*<br> RoHS Compliant, Halogen-Free  G  D  S<br>Gate  Drain  Source<br>[><br>Standard Pack<br>Base part number  Package Type  Orderable Part Number<br>Form  Quantity<br>IRL60SL216  TO-262   Tube  50  IRL60SL216<br>IRL60S216   D [2] -Pak      Tape and Reel   800  IRL60S216<br>6 315<br>ID = 100AD = 100A= 100A Limited By  Package<br>270<br>5 Lo Se<br>225<br>4<br>TCC TJ = 125°CJ = 125°C= 125°C 180 pt<br>3<br>NUTT | Na<br>135<br>2<br>90<br>1 A TJ = 25°CJ = 25°C= 25°C CoeeeS<br>45<br>PCr Pt [ttt]<br>0 CCCPCr 0 CCCyy<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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6<br>ID = 100AD = 100A= 100A<br>5 Lo<br>4<br>TCC TJ = 125°CJ = 125°C= 125°C<br>3<br>NUTT |<br>2<br>1 A TJ = 25°CJ = 25°C= 25°C<br>CCCPCr<br>0<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

**Fig 1.** Typical On-Resistance vs. Gate Voltage **Fig 2.** Maximum Drain Current vs. Case Temperature 1 2016-1-19 ~~rr~~ 

IRL60S/SL216 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**||**Max.**|**Max.**||**Units**|
|---|---|---|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS@10V(Silicon Limited)||298||||
|ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)||210<br>195|||A|
|IDM|Pulsed Drain Current||780||||
|PD @TC= 25°C|Maximum Power Dissipation||375|||W|
||Linear DeratingFactor||2.5|||W/°C|
|VGS|Gate-to-Source Voltage||± 20|||V|
|TJ|Operating Junction and||||||
|TSTG|Storage Temperature Range|-55  to + 175|-55  to + 175|||°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)||300||||
|**Avalanche Characteristics**|||||||
|EAS (Thermally limited)<br>EAS(Thermallylimited)|SinglePulseAvalancheEnergy <br>Single Pulse Avalanche Energy||530<br>1045|||mJ|
|IAR<br>EAR|Avalanche Current<br>Repetitive Avalanche Energy|See Fig 15, 16, 23a, 23b|||See Fig 15, 16, 23a, 23b|A<br>mJ|
|**Thermal Resistance**|||||||
|**Symbol**|**Parameter**|**Typ.**|||**Max.**|**Units**|
|RJC|Junction-to-Case|–––|||0.4||
|RCS|Case-to-Sink,Flat Greased Surface|0.50|||–––|°C/W|
|RJA|Junction-to-Ambient|–––|||62||



|**Symbol**<br>~~ee~~<br>~~es~~|**Parameter**<br>~~DD~~<br>~~rs~~|**Min.**<br>~~DD~~<br>~~GD~~|**Typ. Max.**<br>~~DD~~<br>~~DO~~|**Typ. Max.**<br>~~DD~~<br>~~DO~~|**Units**<br>~~DD~~<br>~~(~~<br>~~( ——~~|**Conditions**<br>~~DD~~<br>~~(~~<br>~~——~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ee~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~DD~~<br>~~rs~~|60<br>~~DD~~<br>~~GD~~|–––<br>~~DD~~<br>~~DO~~|–––<br>~~DD~~<br>~~DO~~|V<br>~~DD~~<br>~~(~~<br>~~( ——~~|VGS= 0V,ID= 250µA<br>~~DD~~<br>~~(~~<br>~~——~~|
|V(BR)DSS/TJ<br>~~es~~|JBreakdown Voltage Temp. Coefficient<br>~~rs~~|––– 0.040 –––<br>~~GD~~|––– 0.040 –––<br>~~DO~~|––– 0.040 –––<br>~~DO~~|V/°C<br>~~(~~<br>~~( ——~~|Reference to 25°C,ID= 2mA<br>~~(~~<br>~~——~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~rs~~|–––<br>~~GD~~|1.6<br>~~DO~~|1.95<br>~~DO~~|m<br> ~~( ——~~|VGS= 10V,ID= 100A<br>~~——~~|
|||–––<br>~~GD ~~|1.8<br> ~~DO~~|2.2<br>~~DO ~~||VGS =4.5V, ID =50A<br>~~——~~|
|VGS(th)<br>~~i~~|GateThresholdVoltage|1.0|–––|2.4|V|VDS= VGS,ID= 250µA|
|GS(th)<br>IDSS<br>~~i~~<br>~~———~~|Drain-to-Source Leakage Current<br>~~—~~|–––|–––|1.0|µA|VDS =60 V, VGS =0V|
|||–––|–––|150||VDS=60V,VGS=0V,TJ=125°C|
|IGSS<br>~~———~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~—~~|–––|–––|100|nA<br>~~nD~~<br>~~S(O~~|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~—~~<br>~~nD~~|–––<br>~~nD~~<br>~~Is~~|–––<br>~~nD~~<br>~~Is~~|-100<br>~~nD~~<br>~~(I~~||VGS = -20V<br>~~nD~~<br>~~S(O~~|
|RG<br>~~———~~<br>~~ee~~|Gate Resistance<br>~~—~~<br>~~nD~~|–––<br>~~nD~~<br>~~Is~~|2.0<br>~~nD~~<br>~~Is~~|–––<br>~~nD~~<br>~~(I~~|<br>~~nD~~<br>~~S(O~~|~~nD~~<br>~~S(O~~|



## **Notes:** 

> Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that 

- Current imitations arising from heating of the device leads may occur with some  lead mounting arrangements. (Refer to AN-1140) 

- Repetitive rating;  pulse width limited by max. junction temperature. 

> Limited by TJmax, starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1100A/µs, VDD  V(BR)DSS, TJ  175°C. 

- Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

-    Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V. 

-    Pulse drain current is limited to 780A by source bonding technology. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques 

- refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 

2 

2016-1-19 

IRL60S/SL216 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~GO~~|**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ. **<br>~~GO~~|**Max. Units**<br>~~GO ~~|**Max. Units**<br> ~~OO~~|**Max. Units**<br>**Conditions**<br>~~OO~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~<br>~~——————~~|Forward Transconductance<br>~~——————~~|229<br>~~——————~~|–––|–––|S<br>~~ee~~|VDS= 10V,ID= 100A<br>~~ee~~|
|Qg<br>~~a~~<br>~~——————~~|Total Gate Charge<br>~~——————~~|–––<br>~~——————~~|170|255|nC<br>~~ee~~|ID=  100A<br>VDS= 30V<br>VGS= 4.5V<br>~~ee~~|
|Qgs<br>~~a~~<br>~~a——————~~|Gate-to-Source Charge<br>~~——————~~|–––<br>~~——————~~|53|–––|||
|Qgd<br>~~——————~~|Gate-to-Drain Charge<br>~~——————~~|–––<br>~~——————~~|80|–––|||
|Qsync<br>~~——————~~<br>~~a~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~——————~~|–––<br>~~——————~~|90|–––|||
|td(on)<br>~~——————~~<br>~~a~~|Turn-On DelayTime<br>~~——————~~|–––<br>~~——————~~|70|–––|ns<br>~~ee~~<br>|VDD= 30V<br>ID= 30A<br>RG= 2.7<br>VGS= 4.5V<br>~~ee~~<br>|
|tr<br>~~a~~<br>~~a~~|Rise Time<br>~~a~~|–––<br>~~a~~|180<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime|–––|190|–––|||
|tf<br>~~a~~<br>~~——<—~~|Fall Time<br><br>~~——<—~~|–––<br><br>~~——<—~~|120<br>|–––<br>|||
|Ciss<br>~~———~~<br>~~——<—~~|Input Capacitance<br>~~———~~<br>~~——<—~~|–––<br>~~———~~<br>~~——<—~~|15330<br>~~———~~|–––<br>~~———~~|pF<br> <br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br> ~~ee~~|
|Coss<br>~~———~~<br>~~a~~<br>~~——<—~~|Output Capacitance<br>~~———~~<br>~~——<—~~|–––<br>~~———~~<br>~~——<—~~|1260<br>~~———~~|–––<br>~~———~~|||
|Crss<br>~~———~~<br>~~a——<—~~|Reverse Transfer Capacitance<br>~~———~~<br>~~——<—~~|–––<br>~~———~~<br>~~——<—~~|890<br>~~———~~|–––<br>~~——— ~~|||
|Coss eff.(ER)<br>~~——<—~~|Effective Output Capacitance (Energy Related)<br>~~——<—~~|–––<br>~~——<—~~|1260<br>~~GO~~|–––<br>~~GO~~||VGS= 0V, VDS = 0V to 48V<br>~~DO~~|
|Coss eff.(TR) <br>~~——<—~~<br>~~a~~|Output Capacitance(Time Related)<br>~~——<—~~<br>~~Ge~~|–––<br>~~——<—~~<br>~~Ge~~|1640<br>~~Ge~~<br>~~GO~~|–––<br>~~Ge~~<br>~~GO~~||VGS= 0V,VDS = 0V to 48V<br>~~DO~~|
|**Diode Characteristics**<br>~~——<—~~<br>~~GO DO~~<br>~~pO~~|||||||
|**Symbol**<br>~~pOer~~|**Parameter **<br>~~er~~|**Min.**|**Typ. **|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**<br>~~ee~~|
|IS<br>~~pOer~~|Continuous Source Current<br>(Body Diode)<br>~~er~~|–––|–––|298<br>~~ee~~|A<br>~~ee~~<br>~~a~~|D<br>S<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>~~ee~~<br>~~a=~~|
|ISM<br>~~er~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~er~~<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|780<br>~~ee~~<br>~~a~~|||
|VSD<br>~~er~~<br>~~a~~<br>~~pop~~|Diode Forward Voltage<br>~~er~~<br>~~a~~<br>~~pop~~|–––<br>~~a~~|–––<br>~~a~~<br>~~GG~~|1.2<br>~~ee~~<br>~~a~~<br>~~GG~~|V<br>~~ee~~<br>~~a~~<br>~~GG~~|TJ= 25°C,IS=100A,VGS= 0V<br>~~ee~~<br>~~a~~|
|dv/dt<br>~~a~~<br>~~pop~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~BG~~<br>~~pop~~|–––<br>~~a~~<br>~~BG~~|9.5<br>~~a~~<br>~~BG~~<br>~~GG~~|–––<br>~~a~~<br>~~BG~~<br>~~GG~~|V/ns T<br>~~a~~<br>~~BG~~<br>~~GG~~|V/ns TJ= 175°C,IS= 100A,VDS= 60V<br>~~a~~<br>~~BG~~|
|trr<br>~~pop~~|Reverse Recovery Time<br>~~pop~~|–––|52<br>~~GG~~|–––<br>~~GG~~|ns<br>~~GG~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~|~~|54<br>~~GG~~<br>~~|~~|–––<br>~~GG~~<br>~~|~~|||
|Qrr<br>~~pop~~<br>~~ce~~<br>~~a~~|Reverse Recovery Charge<br>~~pop~~<br>~~ce~~|–––<br>~~|~~<br>~~ce~~|87<br>~~GG~~<br>~~|~~<br>~~ce~~|–––<br>~~GG~~<br>~~|~~<br>~~ce~~|nC<br>~~GG~~<br>~~ce~~||
|||–––<br>~~ce~~<br>~~a~~|97<br>~~ce~~<br>~~ee~~|–––<br>~~ce~~|||
|IRRM<br>~~ce~~<br>~~a~~|Reverse Recovery Current<br>~~ce~~|–––<br>~~ce~~<br>~~a ~~|2.9<br>~~ce~~<br> ~~ee~~|–––<br>~~ce~~|A<br>~~ce~~||



3 ~~=~~ 

2016-1-19 ~~OO~~ 

IRL60S/SL216 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>4.5V<br>4.0V<br>3.5V<br>BOTTOM 3.25<br>V<br>3.25V<br>100<br>60µs PULSE WIDTH<br>Tj = 25°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>100 Tt)<br>TJ = 175°C<br>TJ = 25°C<br>10 |<br>1<br>SIE)<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 Te]<br>0 2 4 6<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics<br>1000000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C rss    = C gd<br>100000 Ll C oss   = C ds  + C gd<br>C iss<br>Ht |<br>10000<br>Ett<br>SS Coss<br>Crss<br>Nii<br>1000 Bi:<br>sa Ol<br>100<br>0.1 my 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>4.5V<br>4.0V<br>3.5V 3.25V<br>BOTTOM 3.25<br>V<br>100<br>60µs PULSE WIDTH<br>Tj = 175°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>2.2<br>ID = 100A<br>VGS = 10V<br>fo<br>1.8<br>1.4<br>1.0 =e<br>0.6<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>Fig 6.   Normalized On-Resistance vs. Temperature<br>14<br>ID= 100A<br>12<br>VDS= 48V<br>10 V DS = 30V<br>VDS= 12V<br>8<br>Fae<br>MES?<br>6 Za<br>42 OFay ane<br>0<br>=| EE<br>0 50 100 150 200 250 300 350 400 450<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

2016-1-19 

4 

IRL60S/SL216 ~~Laas~~ 

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Gafin 1000 eon<br>T J  = 175°C<br>Of<br>100<br>10 T J  = 25°C<br>1 ffia<br>V GS  = 0V<br>Pp<br>0.1<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>74<br>Id = 2.0mA<br>72<br>an<br>70<br>TREAT<br>68<br>7 4nn<br>66<br>»4nnnm<br>64<br>ZT<br>62<br>60 EEEpee<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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OPERATION IN THIS AREA<br>LIMITED BY R DS (on)<br>1000<br>100µsec<br>100<br>1msec<br>Limited by Package<br>10<br>oe<br>10msec<br>1 Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0 ae<br>-10 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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4.0<br>VGS = 3.5V<br>VGS = 4.0V Sf<br>3.5<br>VGS = 4.5V<br>VGS = 5.5V<br>VGS = 6.0V<br>3.0<br>VGS = 8.0V<br>VGS = 10V<br>2.5<br>2.0<br>—<br>se<br>1.5<br>pt<br>1.0<br>ft<br>0 50 100 150 200<br>ID, Drain Current (A)<br>Fig 13.   Typical On-Resistance vs. Drain Current<br>5  2016-1-19<br>=<br>)<br><br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


IRL60S/SL216 ~~La~~ 

## ~~Gafineon~~ 

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1<br>TtLo<br>D = 0.50<br>0.1<br>0.20<br>0.10<br>0.05<br>0.01 0.02<br>= 0.01 aes an mL<br>0.001 OTT SINGLE PULSE HIE EE LTE<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 ail EE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart = 25°C (Single Pulse)<br>100<br>10 aA En eed eel A<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>peea SALT| aii meee<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>600<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>500 I D  = 100A 1.Avalanche failures assumption:<br>To Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmax. This is validated for every<br>400 \| 6+ part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is not<br>   exceeded.<br>300 KN 3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>200 4. PD (ave) = Average power dissipation per single avalanche pulse.<br>CINNEE 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>100 6. Iav = Allowable avalanche current.<br>TAN 7. T = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>0 Eae,XN tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>Iav = 2T/ [1.3·BV·Zth]<br>Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav<br>6  2016-1-19<br>ne<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.0<br>2.5<br>TTT TTT<br>2.0<br>See<br>1.5<br>SPS<br>1.0 ID = 250µA<br>ID = 1.0mA<br>ID = 1.0A<br>0.5 avZT aN TIS<br>TTT<br>0.0<br>-75 -25 25 75 125 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IRL60S/SL216<br>20<br>IF = 60A<br>VR = 51V<br>16 TY].<br>TJ = 25°C<br>TJ = 125°C<br>12 mips<br>aan<br>8<br>4 ein f<br>Yt<br>7 | fd<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>IF = 100A<br>VR = 51V<br>16<br>TJ = 25°C<br>TJ = 125°C<br>12<br>| [bee] nae<br>8 | er oe<br>4<br>2b<br>0 tT tL<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
400<br>IF = 60A<br>350 V R  = 51V<br>TJ = 25°C<br>300 T J  = 125°C<br>Leaoe<br>250<br>200 aemua<br>150<br>er<br>100<br>50 A<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
400<br>IF = 100A<br>350 V R  = 51V P|ft<br>TJ = 25°C<br>300 T J  = 125°C<br>He<br>250<br>200 Ctot[7<br>eae<br>150<br>AT<br>10050 Pt ft ft ft<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>Fig 21.   Typical Stored Charge vs. dif/dt<br>7  2016-1-19<br>OO<br>QRR (nC)<br>**----- End of picture text -----**<br>


~~Cinfir~~ 

IRL60S/SL216 ~~_~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae tp 0.01<br>JL<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) ! |!<br>I ! \ ' !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 

2016-1-19 

IRL60S/SL216 ~~a~~ 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO IeaR ~e DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>: Hl WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

2016-1-19 

IRL60S/SL216 ~~La~~ 

## ~~Gafineon~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C"<br>LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

2016-1-19 

~~Gofineon~~ 

IRL60S/SL216 ~~a~~ 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [428 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


## FEED DIRECTION 

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**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00<br>60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

11 2016-1-19 ~~=~~ 

IRL60S/SL216 

**Qualification Information[† ]** Industrial **Qualification Level** (per JEDEC JESD47F)[†† ] D[2] Pak MSL1 **Moisture Sensitivity Level** TO-262 (per JEDEC J-STD-020D[††] ) **RoHS Compliant** Yes ~~—~~ † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ ††  Applicable version of JEDEC standard at the time of product release. 

**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

12 

2016-1-19 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL60SL216/power-mosfet-n-channel-60-v-298-a-1950-ohm-to-262)
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- [Supplier page](https://es.farnell.com/infineon/irl60sl216/mosfet-n-ch-60v-298a-to-262/dp/3514440)
---

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