# Power MOSFET, N Channel, 40 V, 195 A, 1900 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2576893/)

**URL**: https://novapart.co/products/IRL40B212/power-mosfet-n-channel-40-v-195-a-1900-ohm-to
**SKU**: IRL40B212
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.3500
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 231W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 1900µohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2576893/)

Strong _IR_ FET™ IRL40B212 IRL40S212 

## International 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Optimized for Logic Level Drive 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free 

- RoHS Compliant, Halogen-Free 

HEXFET[® ] Power MOSFET 

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VDSS  40V<br>D<br>RDS(on) typ. 1.5m <br>            max  1.9m <br>G<br>ID (Silicon Limited)  254A <br>S<br>ID (Package Limited)  195A<br>==<br>D<br>S<br>D  S<br>G<br>G<br>TO-220AB<br>D [2] -Pak<br>IRL40B212<br>IRL40S212<br>G  D  S<br>Gate  Drain  Source<br>a<br>**----- End of picture text -----**<br>


|||**Standard Pack**|**Standard Pack**||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**|**Orderable Part Number**|
|IRL40B212|TO-220|Tube|50|IRL40B212|
|IRL40S212|D2-Pak|Tape and Reel|800|IRL40S212|



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6<br>ID = 100A<br>5<br>4 tpi ttl |<br>Le<br>3 T = 125°C<br>J<br>A<br>2<br>We<br>1 eee TJ = 25°C OH<br>0 PPE er<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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300<br>250 Limited By Package<br>200 oP] |<br>ne<br>150<br>PT TN<br>100<br>FANS<br>50 PPE EN<br>0 CTT<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On– Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRL40B212/IRL40S212 

## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**||||||**Max.**||||**Units**|
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)||||||254|||||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)||||||179<br>195||||A|
|IDM<br>Pulsed Drain Current||||||990 *|||||
|PD @TC= 25°C<br>Maximum Power Dissipation||||||231||||W|
|Linear DeratingFactor||||||1.5|1.5|||W/°C|
|VGS<br>Gate-to-Source Voltage||||||± 20||||V|
|TJ<br>Operating Junction and|||||||||||
|TSTG<br>Storage Temperature Range||||||-55  to + 175||||°C|
|SolderingTemperature,for 10 seconds (1.6mm fromcase)||||||300|||||
|MountingTorque, 6-32 or M3 Screw|ue, 6-32 or M3 Screw|||||10 lbf·in(1.1 N·m)|||||
|**Avalanche Characteristics**|||||||||||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>342<br>mJ<br>EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>790<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>~~————~~|||||||||||
|**Thermal Resistance**|||||||||||
|**Symbol**<br>**Parameter**||||||**Typ.**||**Max.**||**Units**|
|RJC<br>Junction-to-Case||||||–––||0.65|||
|RCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>RJA<br>Junction-to-Ambient<br>–––||||||||–––<br>62||°C/W|
|RJA<br>Junction-to-Ambient(PCB Mount) ||||||–––||40|||
|**Static @ TJ = 25°C (unless otherwise specified)**|||||||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**||||**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|40|–––|–––|||V<br>VGS= 0V,ID= 250µA|||||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|0.03|–––|||V/°C<br>Reference to 25°C||Reference to 25°C,ID= 2mA||= 2mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––<br>–––|1.5<br>1.9|1.9<br>2.4|||m<br>VGS= 10V,ID= 100A<br>VGS =4.5V, ID =50A|||||
|VGS(th)<br>GateThresholdVoltage|1.0|–––|2.4|||V<br>VDS= VGS,I||ID= 150µA|||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150|||µA<br>VDS= 40V,VGS=0V<br>VDS= 40V,VGS=0V,TJ=125°C|||||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-SourceReverseLeakage|–––<br>–––|–––<br>–––|100<br>-100|||nA<br>VGS= 20V<br>VGS= -20V||V|||
|RG<br>Gate Resistance|–––|1.6|–––||||||||



## **Notes:** 

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current  limitations arising from heating of the device leads may occur with some  lead mounting arrangements. (Refer to AN-1140) 

    Repetitive rating;  pulse width limited by max. junction temperature. 

> Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V. 

-     ISD  100A, di/dt  950A/µs, VDD  V(BR)DSS, TJ  175°C. 

-     Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS 

- R is measured at TJ approximately 90°C. 

-    When mounted on 1 inch square  PCB (FR-4). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

-   Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 40A, VGS =10V. 

- Pulse drain current is limited at 780A by source bonding technology. 

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IRL40B212/IRL40S212 ~~ee~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~i~~<br>~~a~~|**Parameter**<br>~~Ge~~|**Min.**<br>~~Ge~~|**Typ. **|**Max. Units**<br>~~QO~~|**Max. Units**<br>~~GQ~~|**Max. Units**<br>**Conditions**<br>~~GQ~~|
|---|---|---|---|---|---|---|
|gfs<br>~~i~~<br>~~eG~~<br>~~a~~|Forward Transconductance<br>~~Ge~~<br>~~eG~~|256<br>~~Ge~~<br>~~eG~~|–––<br>~~eG~~|–––<br>~~eG~~<br>~~QO~~|S<br>~~eG~~<br>~~GQ~~|VDS= 10V,ID= 100A<br>~~eG~~<br>~~GQ~~|
|Qg<br>~~a~~|Total Gate Charge|–––|91|137<br>~~QO ~~|nC<br> ~~GQ~~|ID= 100A<br>VDS= 20V<br>VGS= 4.5V<br>~~GQ~~|
|Qgs|Gate-to-Source Charge|–––|25|–––|||
|Qgd<br>~~i~~|Gate-to-Drain Charge<br>|–––<br>|46<br>|–––<br>|||
|Qsync<br>~~oe~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~oe~~|–––<br>~~oe~~|45<br>~~oe~~|–––<br>~~oe~~|||
|td(on)<br>~~oe~~|Turn-On DelayTime<br>~~oe~~|–––<br>~~oe~~|39<br>~~oe~~|–––<br>~~oe~~|ns|VDD= 20V<br>ID= 30A<br>RG= 2.7<br>VGS= 4.5V|
|tr<br>~~a~~|Rise Time|–––|154|–––|||
|td(off)|Turn-Off DelayTime|–––|88|–––|||
|tf|Fall Time|–––|84|–––|||
|Ciss|Input Capacitance|–––|8320|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7|
|Coss|Output Capacitance|–––|1050|–––|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|790<br>~~ee~~|–––<br>~~ee~~|||
|Coss eff.(ER)<br>~~a~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~|–––<br>~~ee~~|1250<br>~~ee~~|–––<br>~~ee~~||VGS= 0V, VDS = 0V to 32V|
|Coss eff.(TR)<br>~~a~~<br>~~Da~~|Output Capacitance(Time Related)<br>~~ee ~~<br>~~Da~~|–––<br> ~~ee~~<br>~~Da~~|1580<br>~~ee~~<br>~~Da~~|–––<br>~~ee~~<br>~~Da~~||VGS= 0V,VDS = 0V to 32V|



**Diode Characteristics** 

|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|pF<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>790<br>–––<br>ƒ= 1.0MHz,  See Fig.7<br>Coss eff.(ER)<br>Effective Output Capacitance<br>(Energy Related)<br>–––<br>1250<br>–––<br>VGS= 0V, VDS = 0V to 32V<br>Coss eff.(TR)<br>Output Capacitance(Time Related)<br>–––<br>1580<br>–––<br>VGS= 0V,VDS = 0V to 32V<br>~~a~~<br>~~ee ee~~<br>~~Da~~|
|---|---|---|---|---|---|---|
|**Diode Characteristics**|||||||
|**Symbol**<br>~~p~~<br>~~SSS~~|**Parameter **<br>~~p~~<br>~~SSS~~|**Min.**<br>~~pO~~<br>~~SSS~~|**Typ. **<br>~~O~~|**Max.**<br>~~O~~|**Units**<br>~~O~~|**Conditions**<br>~~O~~<br>~~ee~~|
|IS<br>~~p~~<br>~~SSS~~|Continuous Source Current<br>(BodyDiode)<br>~~p~~<br>~~SSS~~|–––<br>~~pO~~<br>~~SSS~~|–––<br>~~O~~|254<br>~~O~~|A<br><br>~~O~~<br>~~sO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~O~~<br>~~ee~~|
|ISM<br>~~SSS~~|Pulsed Source Current<br>(Body Diode)<br>~~SSS~~|–––<br>~~SSS~~|–––<br>~~sO~~|990*<br>~~sO~~|||
|VSD<br>~~SSS~~<br>~~Oe~~<br>~~G~~|Diode Forward Voltage<br>~~SSS~~<br>~~Oe~~<br>~~GQ~~|–––<br>~~SSS~~<br>~~Oe~~<br>~~Q~~|–––<br>~~Oe~~<br>~~sO~~<br>~~Q~~|1.2<br>~~Oe~~<br>~~sO~~<br>~~Q~~|V<br>~~Oe~~<br>~~sO~~<br>~~Q (~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~ee~~<br>~~Oe~~<br>~~(O~~|
|dv/dt<br>~~Oe~~<br>~~G~~|Peak Diode Recoverydv/dt<br>~~Oe~~<br>~~GQ~~|–––<br>~~Oe~~<br>~~Q~~|6.0<br>~~Oe~~<br>~~sO~~<br>~~Q~~|–––<br>~~Oe~~<br>~~sO~~<br>~~Q~~|V/ns T<br>~~Oe~~<br>~~sO~~<br>~~Q (~~|V/ns TJ= 175°C,IS= 100A,VDS= 40V<br>~~Oe~~<br>~~(O~~|
|trr<br>~~G~~<br>~~PEE~~|Reverse Recovery Time<br>~~GQ~~<br>~~PEE~~|–––<br>~~Q~~<br>~~PEE~~|30<br>~~Q~~<br>~~PEE~~|–––<br>~~Q~~<br>~~PEE~~|ns<br>~~Q (~~<br>~~PEE~~|TJ =25°CVDD= 34V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C <br>~~(O~~|
|||–––<br>~~PEE~~|32<br>~~PEE~~|–––<br>~~PEE~~|||
|Qrr<br>~~PEE~~<br>~~pf~~|Reverse Recovery Charge<br>~~PEE~~<br>~~pf~~|–––<br>~~PEE~~|26<br>~~PEE~~|–––<br>~~PEE~~|nC<br>~~PEE~~||
|||–––<br>~~PEE~~|28<br>~~PEE~~|–––<br>~~PEE~~|||
|IRRM<br>~~pf~~|Reverse Recovery Current<br>~~pf~~|–––|1.4|–––|A||



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IRL40B212/IRL40S212<br>I¢R____<br>1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>4.5V 4.5V<br>4.0V 4.0V<br>3.75V 3.75V<br>BOTTOM 3.25V BOTTOM 3.25V<br>3.25V<br>100 100<br>3.25V<br>  60µs PULSE WIDTH  60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>10 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.0<br>ID = 100A<br>1.8 VGS = 10V<br>1.6<br>TJ = 175°C TJ = 25°C 1.4<br>100 TTT] aye<br>1.2<br>1.0<br>VDS = 10V 0.8<br>LAE<br> 60µs PULSE WIDTH<br>10 Wily 0.6 LETTA<br>TTT TE<br>1 2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14<br>VCGS  iss    = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID = 100A<br>C Crss  oss    = C = Cds gd + Cgd 1210 VVDS DS = 32V= 20V<br>10000 Ciss VDS= 8V<br>8<br>C oss<br>C rss 6<br>1000<br>4<br>ca Ee<br>2<br>100 0<br>1 CIT 10 100 = 0 BREE 50 100 150 200 250<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000<br>TJ = 175°C TJ = 25°C<br>100<br>/<br>VGS = 0V<br>10 Whey)<br>0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>50<br>Id = 2.0mA<br>48<br>tite<br>46<br>Ar<br>44<br>A<br>ATLL<br>42<br>LETTE<br>40<br>LL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>100µsec<br>1msec<br>100<br>Limited by Package<br>10<br>eee<br>10msec<br>1 Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>Si<br>0.1 CES<br>0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>-5 0 5 10 15 20 25 30 35 40<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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7.0<br>VGS = 3.5V<br>VGS = 4.5V<br>6.0 VGS = 6.0V NEREEEE<br>VGS = 8.0V<br>5.0 VGS = 10V NNER ae<br>4.0<br>NW2GEne<br>3.0<br>TEEN TT<br>2.0<br>PEE<br>a<br>1.0<br>PEE<br>0<br>EL Ey<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On– Resistance vs. Drain Current 

5 ~~ss~~ 

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IRL40B212/IRL40S212 ~~[Ln~~ 

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1<br>TCO LOoe<br>D = 0.50<br>0.1 PEP 0.20<br>0.10<br>0.05<br>Spies | II<br>0.02<br>0.01<br>0.01<br>se aati Allll/ alll<br>0.001 SINGLE PULSE aintMAL<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>===<br>100<br>10<br>Bed Sb ai Sai eel<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>1 PC|||Trim<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>350<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>300 1.Avalanche failures assumption:<br>ID = 100A<br>aq Purely a thermal phenomenon and failure occurs at a<br>KN Ld<br>250 temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>200<br>NNEC    exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>150     23a, 23b.<br>PANE<br>4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>100 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>BERESNNGEEEE  increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>50 TINE 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>0 ENN tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figure 14) thJC(D, tav) = Transient thermal resistance, see Figure 14) (D, tav) = Transient thermal resistance, see Figure 14) av) = Transient thermal resistance, see Figure 14) ) = Transient thermal resistance, see Figure 14)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJCav) = T/ ZthJC) = T/ ZthJCT/ ZthJCT/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z  thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figure 14) thJC(D, tav) = Transient thermal resistance, see Figure 14) (D, tav) = Transient thermal resistance, see Figure 14) av) = Transient thermal resistance, see Figure 14) ) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJCav) = T/ ZthJC) = T/ ZthJCT/ ZthJCT/ ZthJCthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRL40B212/IRL40S212<br>iv #£4x,i____<br>2.5 | 9 IF = 60AF = 60A = 60A<br>8<br>VR = 34V<br>2.0<br>7 T  = 25°C<br>J<br>Ro T = 125°C 125°C°CC ee<br>6 J<br>1.5<br>PSS Ps A<br>5<br>ID = 150µA<br>1.0 ID = 250µA BZnNNe 4 a a<br>ID = 1.0mA 3<br>ID = 1.0A<br>0.5 FLL IN 2 SAIS<br>1<br>0.0 EL 0 ooeeee<br>-75 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000<br>TJ , Temperature ( °C )<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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9<br>IF = 60AF = 60A = 60A<br>8<br>VR = 34V<br>7 T  = 25°C<br>J<br>ee<br>T = 125°C 125°C°CC<br>6 J<br>A<br>5<br>4 a a<br>3<br>2 SAIS<br>1<br>ooeeee<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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9<br>IF = 100A<br>8<br>pot<br>VR = 34V<br>7 T  = 25°C<br>J oe<br>T = 125°C<br>6 J<br>AT<br>54 Te LT<br>3<br>TTT<br>2<br>1 AT t_ tt<br>0 ee ee<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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160<br>IF = 60A<br>140 V R  = 34V Pt ae<br>TJ = 25°C<br>a<br>120<br>TJ = 125°C<br>100 cara<br>| ey |<br>80 a oe<br>60<br>40<br>;<br>20 7}| | | |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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160<br>IF = 100A<br>140 V R  = 34V TT<br>TJ = 25°C<br>et<br>120<br>TJ = 125°C<br>100 eo<br>80<br>a<br>EWatl<br>60<br>40 Yi| [|<br>20 7]| ft ff<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>Jt tp Y 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th) '<br>l epi n e p i g pig<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

E X A M P L E : T H IS IS A N IR F 1 0 1 0 L O T  C O D E 1 7 8 9 A S S E M B L E D O N W W 1 9 , 2 0 0 0 IN T H E A S S E M B L Y  L IN E "C " 

N o t e :  "P " in a s s e m b ly  lin e p o s it io n in d ic a t e s  "L e a d -  F r e e " 

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**----- Start of picture text -----**<br>
P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE R<br>L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>A S S E M B L Y<br>W E E K  1 9<br>L O T  C O D E<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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© ~~Oi~~ 

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IRL40B212/IRL40S212 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>on YEAR 0 =  2000<br>ASSEMBLY UW<br>LOT CODE WEEK 02<br>U UJ<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S j e<br>LOGO I@aR ~ DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [275 x 295] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

12 www.irf.com ~~=~~ 

~~_~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irl40b212/mosfet-n-ch-40v-195a-to-220ab/dp/2576893)
---

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