# Power MOSFET, N Channel, 40 V, 195 A, 1250 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2576892/)

**URL**: https://novapart.co/products/IRL40B209/power-mosfet-n-channel-40-v-195-a-1250-ohm-to
**SKU**: IRL40B209
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9600
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 1250µohm |
| Gate Source Threshold Voltage Max | 2.4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2576892/)

Strong _IR_ FET™ IRL40B209 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Optimized for Logic Level Drive 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free 

- RoHS Compliant, Halogen-Free 

HEXFET[® ] Power MOSFET 

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VDSS  40V<br>D<br>RDS(on) typ. 1.0m <br>            max  1.25m <br>G<br>ID (Silicon Limited)  414A <br>S<br>ID (Package Limited)  195A<br>S<br>D<br>G<br>TO-220AB<br>IRL40B209<br>G  D  S<br>Gate  Drain  Source<br>**----- End of picture text -----**<br>


|||**Standard Pack**|**Standard Pack**||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**|**Orderable Part Number**|
|IRL40B209|TO-220|Tube|50|IRL40B209|



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6 450<br>ID = 100A 400<br>5 Limited By Package<br>Toit iii fT<br>350<br>4 TEE 300 pt<br>250<br>3 WEEE ac<br>| 200 P| of |<br>2 TJ = 125 ° C 150<br>ALE ETT $$$ —<br>100<br>1<br>SPE EEC TJ = 25°C 50 aw<br>0 PoC 0 Ceres<br>2 4 6 8 10 12 14 16 18 20<br>25 50 75 100 125 150 175<br>VGS, Gate -to -Source Voltage  (V)  TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRL40B209 

## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**|||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**|||||**Max.**||||**Units**||
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|||||414||||||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)|||||293<br>195||||A||
|IDM<br>Pulsed Drain Current|||||1707|1707|||||
|PD @TC= 25°C<br>Maximum Power Dissipation|||||375||||W||
|Linear DeratingFactor|||||2.5||||W/°C||
|VGS<br>Gate-to-Source Voltage|||||± 20||||V||
|TJ<br>Operating Junction and|||||||||||
|TSTG<br>Storage Temperature Range|||||-55  to + 175||||°C||
|SolderingTemperature,for 10 seconds (1.6mm fromcase)|||||300||||||
|MountingTorque, 6-32 or M3 Screw|||||10 lbf·in(1.1 N·m)||||||
|**Avalanche Characteristics**|||||||||||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>EAS(Thermallylimited)<br>Single Pulse Avalanche Energy|||||730<br>1420||||mJ||
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy|||||See Fig 15, 16, 23a, 23b||||A<br>mJ||
|**Thermal Resistance**|||||||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.4<br>°C/W<br>RCS<br>Case-to-Sink,Flat Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62<br>~~———~~|||||||||||
|**Static @ TJ = 25°C (unless otherwise specified)**|||||||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|||**Conditions**||||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|40|–––|–––||V<br>VGS= 0V,ID= 250µA||||||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|––– 0.031 –––|––– 0.031 –––|––– 0.031 –––|V/°C<br>Reference to 25°C|||Reference to 25°C,ID= 5mA||= 5mA||
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––<br>–––|1.0<br>1.2|1.25<br>1.6||m<br>VGS= 10V,ID= 100A<br>VGS =4.5V, ID =50A||||||
|VGS(th)<br>GateThresholdVoltage|1.0|–––|2.4||V<br>VDS= VGS,I||ID= 250µA||||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150||µA<br>VDS=40V,VGS=0V<br>VDS=40V,VGS=0V,TJ=125°C||||||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-SourceReverseLeakage|–––<br>–––|–––<br>–––|100<br>-100||nA<br>VGS= 20V<br>VGS= -20V||V||||
|RG<br>Gate Resistance|–––|2.1|–––||||||||



## **Notes:** 

> Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current  limitations arising from heating of the device leads may occur with some  lead mounting arrangements. (Refer to AN-1140)     Repetitive rating;  pulse width limited by max. junction temperature. 

> Limited by TJmax, starting TJ = 25°C, L = 0.15mH,RG = 50, IAS = 100A, VGS =10V. 

>     ISD  100A, di/dt  930A/µs, VDD  V(BR)DSS, TJ  175°C. 

-     Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

>  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS 

- R is measured at TJ approximately 90°C. 

>      Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 53A, VGS =10V. 

-    Pulse drain current is limited at 780A by source bonding technology. 

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2 

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IRL40B209 ~~[LLL~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~GO~~|**Min.**<br>~~GO~~|**Typ. **<br>~~GO~~|**Max. Units**<br>~~GO~~|**Max. Units**<br>~~GO~~|**Max. Units**<br>**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|270|–––|–––|S|VDS= 10V,ID=100A|
|Qg<br>~~a~~|Total Gate Charge|–––|180|270|nC|ID= 100A<br>VDS= 20V<br>VGS= 4.5V|
|Qgs<br>~~a~~|Gate-to-Source Charge|–––|51|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge|–––|88|–––|||
|Qsync<br>~~a~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|92|–––|||
|td(on)<br>~~es~~|Turn-On DelayTime|–––|56|–––|ns|VDD= 20V<br>ID= 30A<br>RG= 2.7<br>VGS= 4.5V|
|tr<br>~~es~~<br>~~a~~|Rise Time|–––|198|–––|||
|td(off)|Turn-Off DelayTime|–––|188|–––|||
|tf|Fall Time|–––|150|–––|||
|Ciss<br>~~a~~|Input Capacitance|–––|15140|–––|pF<br>~~EE~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>|
|Coss|Output Capacitance|–––|1990|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance<br>|–––<br>|1370<br>|–––<br>|||
|Coss eff.(ER)<br>~~EE~~|Effective Output Capacitance<br>~~EE~~|–––<br>~~EE~~|2340<br>~~EE~~|–––<br>~~EE~~||VGS= 0V, VDS = 0V to 32V<br>~~EE~~|
|Coss eff.(TR)<br>~~pO~~|Output Capacitance(Time Related)<br>~~pO~~|–––<br>~~pO~~|2900<br>~~pO~~|–––<br>~~pO~~||VGS= 0V,VDS = 0V to 32V|
|**Diode Characteristics**<br>~~pO~~<br>~~OO~~<br>~~ee~~|||||||
|**Symbol**<br>~~G~~<br>~~ee~~|**Parameter **<br>~~G~~|**Min.**<br>~~GO~~|**Typ. **<br>~~O~~|**Max.**<br>~~O~~<br>~~OO~~|**Units**<br>~~O~~<br>~~OO~~|**Conditions**<br>~~O~~|
|IS<br>~~G~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~G~~|–––<br>~~GO~~|–––<br>~~O~~|414<br>~~O~~<br>~~OO~~|A<br>~~O~~<br>~~OO~~|D<br>S<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>~~O~~|
|ISM<br>~~ee~~|Pulsed Source Current<br>(BodyDiode)|–––|–––|1707<br>~~OO~~|||
|VSD<br>~~ee~~<br>~~a GO~~|Diode Forward Voltage<br>~~GO~~|–––<br>~~GO~~|–––<br>~~GO~~|1.2<br>~~OO~~<br>~~GO~~|V<br>~~OO~~<br>~~GO~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~GO~~|
|dv/dt<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~pf~~|–––<br>~~pf~~|2.4<br>~~pf~~|–––<br>~~pf~~|V/ns T<br>~~pf~~|V/ns TJ= 175°C,IS= 100A,VDS= 40V<br>~~pf~~|
|trr<br>~~pf~~<br>~~ee~~|Reverse Recovery Time<br>~~pf~~<br>~~ee~~|–––<br>~~pf~~<br>~~ee~~|41<br>~~pf~~<br>~~ee~~|–––<br>~~pf~~<br>~~ee~~|ns<br>~~pf~~<br>~~ee~~|TJ =25°CVDD= 34V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C <br>~~pf~~|
|||–––<br>~~ee~~|42<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|46<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|50<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~a~~|Reverse Recovery Current<br>~~eee~~<br>~~a~~|–––<br>~~eee~~<br>~~a~~|2.0<br>~~eee~~<br>~~a~~|–––<br>~~eee~~<br>~~a~~|A<br>~~eee~~<br>~~a~~||



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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>5.0V<br>4.5V<br>4.0V<br>BOTTOM 3.5V<br>100<br>3.5V<br>  60µs PULSE WIDTH<br>Tj = 25°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>7<br>TJ = 175°C TJ = 25°C<br>100 ff/<br>/<br>VDS = 10V<br> 60µs PULSE WIDTH<br>10 |<br>1 2 3 4 5 6 7<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>Ciss<br>aT<br>10000<br>Coss<br>Crss<br>le<br>Sth<br>1000 Hess<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>6.0V<br>5.0V<br>4.5V<br>4.0V<br>3.5V BOTTOM 3.5V<br>100<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>2.0<br>ID = 100A<br>1.8 VGS = 10V TOOL<br>1.6<br>1.4 SERUEERED<br>EELZOD<br>1.2<br>1.0 Eee Eee<br>SURRREDAnnE<br>0.8 Cee<br>AT EEEEEE<br>0.6 th<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Fig 6.   Normalized On-Resistance vs. Temperature<br>14<br>ID = 100A<br>12<br>To<br>VDS= 32V<br>10 V DS = 20V<br>VDS= 8V<br>8<br>Seances 40<br>6<br>4<br>2 fae) aeen<br>»=”Ennee<br>0<br>7<br>0 50 100 150 200 250 300 350 400 450<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>100µsec<br>TJ = 175 ° C 1msec<br>TJ = 25°C 100<br>100 Limited by Package<br>“f| BS<br>10<br>10msec<br>1 Tc = 25°C DC<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>10 Why) | 0.1 CENSei<br>0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage  Fig 10.   Maximum Safe Operating Area<br>50 1.8<br>Id = 5.0mA<br>1.6<br>48<br>1.4<br>PLLa<br>1.2<br>46<br>1.0<br>coo<br>0.8<br>44<br>0.6<br>ALT<br>AC 0.4<br>42<br>0.2<br>40 TTT 0.0 |<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 -5 0 5 10 15 20 25 30 35 40<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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4.0<br>VGS = 3.5V<br>3.5 VGS = 4.5V NEREEE<br>VGS = 6.0V<br>VGS = 8.0V<br>3.0<br>VGS = 10V<br>2.5 MAN<br>2.0 SERA GEE<br>1.5 ee<br>————————<br>1.0<br>0.5<br>PTT [TTT] TT TT<br>SERREEEEEE<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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IRL40B209 ~~_LLL~~ 

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1<br>TT TU<br>D = 0.50<br>0.1 0.20<br>0.10<br>0.05<br>0.01 0.02<br>S| eer lil ||<br>0.01<br>ME A a aa<br>0.001<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>ii |<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>100 SE<br>10 aOmani Saal aeaull<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>Ait<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>800<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>700 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 100A 1.Avalanche failures assumption:<br>600 Purely a thermal phenomenon and failure occurs at a<br>Nau<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>500 part type.<br>SOT TT<br>2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not<br>   exceeded.<br>400 PANETT<br>3. Equation below based on circuit and waveforms shown in Figures<br>TOPNACELLEL     23a, 23b.<br>300 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>200 CTC NSE<br> increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>100 CTT SS 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figures14, 15).<br>PEELE ASS<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figure 14) thJC(D, tav) = Transient thermal resistance, see Figure 14) (D, tav) = Transient thermal resistance, see Figure 14) av) = Transient thermal resistance, see Figure 14) ) = Transient thermal resistance, see Figure 14)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z  thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figures14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figure 14) thJC(D, tav) = Transient thermal resistance, see Figure 14) (D, tav) = Transient thermal resistance, see Figure 14) av) = Transient thermal resistance, see Figure 14) ) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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     IRL40B209<br>IQR<br>2.5 12<br>IF = 60A<br>10 V R = 34V<br>2.0 SALE LLL =<br>TJ = 25°C<br>T = 125°C<br>8 J<br>1.5 ESS ran<br>6<br>ID = 250µA<br>1.0 ID = 1.0mA D Sunn ann<br>ID = 1.0A Nk 4 YO<br>0.5 HLS roman<br>LLL TEEN 2 TT<br>0 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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12<br>IF = 100A<br>10 V R = 34V<br>ane<br>TJ = 25°C<br>T = 125°C<br>8 J<br>pa<br>6<br>4<br>7ann<br>2 7 |<br>PT<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
400<br>IF = 60A<br>360<br>VR = 34V<br>=<br>320 T  = 25°C<br>J<br>T = 125°C<br>280 J<br>240<br>LEE<br>200<br>160<br>120<br>oon<br>80<br>40 to<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
280<br>IF = 100A<br>240 V R = 34V<br>pea<br>TJ = 25°C<br>T = 125°C<br>200 J<br>Te<br>yam<br>160<br>120<br>Ty TT<br>80<br>T_T<br>CATT<br>40<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs /, (th) : '|<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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8 

IRL40B209 ~~es~~ 

## ~~IR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ © 2015 International Rectifier Submit Datasheet Feedback                   May 18, 2015                    May 18, 2015 ~~_~~ 

10 ~~Lc~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRL40B209/power-mosfet-n-channel-40-v-195-a-1250-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl40b209/mosfet-n-ch-40v-195a-to-220ab/dp/2576892)
---

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