# Power MOSFET, N Channel, 30 V, 140 A, 0.0055 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3155153/)

**URL**: https://novapart.co/products/IRL3803VPBF/power-mosfet-n-channel-30-v-140-a-00055-ohm-to
**SKU**: IRL3803VPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7160
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 200W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0055ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 140A |
| Drain Source On State Resistance | 0.0055ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155153/)

PD - 95955 

## IRL3803VPbF 

HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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D<br>VDSS = 30V<br>R  = 5.5mΩ<br>DS(on)<br>G<br>ID = 140A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

or. **Parameter** /“/’Vvrv’--. **Max.** oT **Units** eee ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 140 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 A IDM Pulsed Drain Current = 470 ~~—_ es~~ PD @TC = 25°C Power Dissipation 200 W ~~-———,es~~ Linear Derating Factor 1.4 W/°C ~~eSss,— a~~ VGS Gate-to-Source Voltage ± 16 V ~~a~~ IAR Avalanche Current 71 A ~~OO~~ EAR Repetitive Avalanche Energy 20 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pf - OT~~ Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.74|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>ee|**Min.**<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~es~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|30<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~es~~|0.028<br> ~~es~~<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~eee~~<br>~~|~~<br>~~ee~~|–––<br>~~es~~<br>~~eee~~<br>~~|fT~~|–––<br>~~eee~~<br>~~fT~~|5.5<br>~~eee~~<br>~~fT~~|mΩ<br>~~eee~~|VGS= 10V, ID= 71A<br>~~:~~<br>~~@~~|
|||–––<br>~~eee~~<br>~~|fT~~<br>~~**e**e~~|–––<br>~~eee~~<br>~~fT~~<br>~~es~~|7.5<br>~~eee~~<br>~~fT~~||VGS= 4.5V, ID= 59A<br>~~:~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~|~~<br>~~es~~<br>~~ee~~|1.0<br>~~| fT~~<br>~~es~~<br>~~**e**e~~<br>~~s~~|–––<br>~~fT~~<br>~~es~~<br>~~es~~|–––<br>~~fT~~<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~@~~<br>~~@~~|
|gfs|Forward Transconductance<br>~~ee~~|82<br>~~**e**e~~<br>~~s~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|S<br>~~ee~~|VDS= 25V, ID= 71A<br>~~@~~|
|IDSS<br>~~Isss~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~ee~~<br>~~**|**~~<br>~~ee~~|–––<br>~~**e**e ~~<br>~~s~~<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br> ~~es~~<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|VDS= 30V, VGS= 0V<br>~~@~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~<br>~~ee~~<br>||250<br>~~ee~~<br>~~ee~~<br>|||VDS= 24V, VGS= 0V, TJ= 150°C|
|~~Isss~~<br>~~a~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~**|**~~<br>~~ee~~|–––<br>~~ee~~<br>~~**|**~~|–––<br>~~ee ~~|100<br> ~~ee~~|nA<br>~~ee~~|VGS= 16V|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~a~~<br>|–––<br>|–––<br>|-100<br>||VGS= -16V|
|Qg<br>~~Isss ~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>~~a~~<br>|–––<br>|–––<br>|76<br>|nC|ID= 71A<br>VDS= 24V<br>VGS= 4.5V, See Fig. 6 and 13|
|Qgs<br>~~a~~<br>~~a~~|Gate-to-Source Charge<br>~~a~~<br>|–––<br>|–––<br>|19<br>|||
|Qgd<br>~~Pt~~|Gate-to-Drain("Miller")Charge<br>~~Pt~~|–––<br>~~Pt~~|–––<br>~~Pt~~|35<br>~~Pt~~|||
|td(on)<br>~~Pt~~<br>PT|Turn-On Delay Time<br>~~Pt~~<br>~~es~~<br>PT|–––<br>~~Pt~~<br>~~es~~<br>|16<br>~~Pt~~<br>~~es~~<br>|–––<br>~~Pt~~<br>~~es~~<br>|ee|VDD= 15V<br>ID= 71A<br>RG= 1.3Ω<br>VGS= 4.5V, See Fig. 10<br>@|
|tr<br>PT<br>ee|Rise Time<br>PT—“—tsss**s**SSCidE<br>|–––<br>SSCidE|180<br>SSCidE<br>ee|–––<br>SSCidE<br>ee|||
|td(off)<br>PT<br>ee|Turn-Off Delay Time<br>PT—“—tsss**s**SSCidE<br>~~e~~|–––<br>SSCidE|29<br>SSCidE<br>ee|–––<br>SSCidE<br>ee|||
|d(off)<br>tf<br><br>ee<br>~~>~~|Fall Time<br>—“—tsss**s**SSCidE<br><br>~~>~~|–––<br>SSCidE<br>~~>~~|37<br>SSCidE<br>ee<br>~~>~~|–––<br>SSCidE<br>ee<br>~~>~~|||
|LD<br>~~>~~|Internal Drain Inductance<br>~~>~~|–––<br>~~>~~|4.5<br>~~>~~|–––<br>~~>~~||Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>@|
|LS<br>~~>~~<br>~~pf~~|Internal Source Inductance<br>~~>~~<br>~~pf~~|–––<br>~~>~~|7.5<br>~~>~~|–––<br>~~>~~|||
|Ciss<br>~~pf~~<br>es|Input Capacitance<br>~~pf~~|–––|3720|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~pf~~<br>es<br>a|Output Capacitance<br>~~pf~~<br>ee|–––<br>ee|1480<br>ee|–––|||
|Crss<br>es<br>a|Reverse Transfer Capacitance<br>ee|–––<br>ee|270<br>ee|–––|||
|EAS<br>a|Single Pulse Avalanche Energy<br> ee|––– 1560<br>ee|1560<br>ee|400|mJ<br>IAS= 71A, L = 0.16mH||



Notes: ~~o~~ Repetitive rating;  pulse width limited by ~~)~~ Pulse width ≤ 400µs; duty cycle ≤ 2%.≤ 400µs; duty cycle ≤ 2%. 400µs; duty cycle ≤ 2%.≤ 2%. 2%. 

~~o~~ Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.≤ 400µs; duty cycle ≤ 2%. 400µs; duty cycle ≤ 2%.≤ 2%. 2%. 

max. junction temperature. (See fig. 11) 

® This is a typical value at device destruction and represents operation outside rated limits. 

Starting TJ = 25°C, L = 160µH 

This is a calculated value limited to TJ = 175°C . 

- RG = 25Ω, IAS = 71A, VGS=10V (See Figure 12) o) ISD ≤ 71A di/d ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 

www.irf.com 

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 1000<br>VGS<br>TOP 15V ot<br>10V a<br>4.5V<br>3.7V<br>3.5V Hite<br>3.3V<br>3.0V<br>BOTTOM 2.7V Aon<br>MW Aer Aer | UH<br> 100 | A | | III III<br>2.7V<br>7/4 inet<br>’/ 7711<br>20µs PULSE WIDTH<br> 10 UMfMff i |ilili T  = 175JJ °CC<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>D<br>I   ,  Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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 1000  1000<br>VGS VGS<br>TOP 15V a TOP 15V ot<br>10V a 10V a<br>4.5V 4.5V<br>3.7V 3.7V<br>3.5V Ht ¢c eet 3.5V Hite<br>3.3V 3.3V<br>3.0V 3.0V<br>BOTTOM 2.7V 17 AR BOTTOM 2.7V Aon<br>Vy Zoennit| | MW Aer Aer | UH<br> 100 eee | | |||  100 | A | | III III<br>2.7V<br>TY tt 7/4 inet<br>VY eri ’/ 7711<br>2.7V<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br> 10 eY year j|| T  = 25J ie °C  10 UMfMff i |ilili T  = 175JJ °CC<br>0.1  1  10  100 0.1  1  10<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DSDS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>IDD = 120A<br>Ba T  = 25  CJ ° e 2.0 A<br>a TTT PP PPP Pee PPP Pee Pee<br>| T  = 175  CJ °<br>1.5<br> 100<br>fe FRECLEEEEITE<br>1.0<br>a 2 ee ee ee ee ee ee p>|| 2g00nnnnn<br>0.5<br>PSS AT<br>V      = 15VDS<br> 10 Pi t et 20µs PULSE WIDTH 0.0 P ET E EEELELRR VGS E GS LE = 10V<br>2.5 3.5 4.5 5.5 6.5 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJJ (  C)°°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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2.5<br>IDD = 120A<br>A<br>2.0<br>TTT PP PPP Pee PPP Pee Pee<br>1.5<br>FRECLEEEEITE<br>1.0<br>p>|| 2g00nnnnn<br>0.5<br>AT<br>VGS = 10V<br>0.0 P ET E EEELELRR E LE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJJ (  C)°°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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6000 15<br>VGSGS = 0V, f = 1MHz ID = 71A<br>— Cississ = Cgsgs + Cgd ,gd , C      SHORTEDdsds , LLLLLLL<br>5000 CCrssossCrssossrssossoss === CCgddsCgddsgddsds + Cgdgd 12 VVDSDS == 24V 15V<br>ae ett t e<br>4000 Cississ<br>Seererr oo 9 pfiffi dg<br>PENT SAT VA<br>3000<br>Sr N EAVA<br>Cossoss 6<br>2000<br>E H H TTT TTC ATT I<br>S il l 3 TT TA TTT<br>1000<br>eelell ——#<br>Crssrss FOR TEST CIRCUIT<br>0 SSllll e n e ll 0 sYitfto| |p SEE FIGURE        t 13<br> 1  10  100 0 20 40 60 80 100<br>V     , Drain-to-Source Voltage (V)DSDS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>T  = 175  CJ °<br> 100 1000<br> 10 100<br>100µsec<br>T  = 25  CJ ° 1msec<br> 1 10<br>Tc = 25°C<br>10msec<br>== —__—-_-—=—= Tj = 175°C =o a<br>V      = 0 V GS Single Pulse<br>0.1 HERE R RE 1 SEEtf<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>1 10 100<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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6000<br>VGSGS = 0V, f = 1MHz<br>— Cississ = Cgsgs + Cgd ,gd , C      SHORTEDdsds<br>5000 ===<br>CCrssossCrssossrssossoss CCgddsCgddsgddsds + Cgdgd<br>ae<br>4000 Cississ<br>Seererr oo<br>PENT SAT<br>3000<br>Sr N<br>Cossoss<br>2000<br>E H H<br>S il l<br>1000<br>eelell<br>Crssrss<br>0 SSllll e n e ll<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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160<br>LIMITED BY PACKAGE<br>PP pf Vos Rv<br>120<br>WHE ves (hour |<br>-<br>CCRCPEt } x f l 7<br>80 eePas >» | VesPulse Width ≤ 1  us<br>≤ 0.1 %<br>PEN ie<br>40<br>pf N VDS Fig 10a. Switching Time Test Circuit<br>90%<br>0 FEET fi<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC  EE E EL L (  C)°  ELA \ \/<br>10% /\_\<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 1 J EEE oo EEE EEE<br>ee<br>a a ee ee ee _ a ee ee<br>D = 0.50<br>a e<br>Po TT | ee<br>e 0.20 rr<br>0.1 0.10 Ca<br>C —2<br>aAe<br>eS 0.05 >—>-40 PDM<br>ma eet 0.020.01 (THERMAL RESPONSE)SINGLE PULSE ee e0 eee t1 t2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1000<br>15V ID<br>Pit<br>TOP 29A<br>50A<br>GaaEEEe<br>800 BOTTOM 71A<br>VDS L DRIVER<br>NER<br>RG D.U.T + 600 ENE EEE<br>- [V][DD]<br>IAS A<br>20V . GR NERS EE<br>tp 0.01Ω 400<br>Fig 12a. Unclamped= Inductive Test Circuit S~ IN A N K<br>200<br>Pp ASANL TT<br>V(BR)DSS<br>_ tp ptSee|PSsEee ~<s<br>0<br>25 50 75 100 125 150 175<br>/ Starting T  , Junction TemperatureJ (  C)°<br>/ y |\ Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Oo Same Type as D.U.T. 7<br>50KΩ<br>12V .2µF<br>QG .3µF<br>CT res<br>+<br>Ves ae : D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>= a<br>nes IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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E XAMPLE : T HIS  IS  AN IRF1010<br>LOT CODE 1789<br>AS S EMBL ED ON WW 19, 1997 INT ERNATIONAL PART NUMBER<br>IN T HE AS S E MBLY LINE "C" RECTIF IER IRF1010<br>Note: position indicates "Lead-Free"  "P" in assembly line L OGO TeaR17 71989 DATE  CODE<br>YEAR 7 =  1997<br>AS S E MBLY<br>LOT  CODE WEE K 19<br>L INE  C<br>**----- End of picture text -----**<br>


## **TO-220AB package is not recommended for Surface Mount Application.** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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