# Power MOSFET, N Channel, 30 V, 120 A, 6000 µohm, TO-220AB, Through Hole ![Product image](https://novapart.co/image/farnell:8651035/) **URL**: https://novapart.co/products/IRL3803PBF/power-mosfet-n-channel-30-v-120-a-6000-ohm-to **SKU**: IRL3803PBF **Manufacturer**: INFINEON **Category**: Semiconductors - Discretes || FETs || Single MOSFETs **Price**: €1.2900 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Description Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power D ## Specifications | Parameter | Value | |---|---| | Msl | - | | Svhc | No SVHC (23-Jan-2024) | | No. Of Pins | 3Pins | | Channel Type | N Channel | | Product Range | - | | Qualification | - | | Power Dissipation | 150W | | Transistor Mounting | Through Hole | | Rds(On) Test Voltage | 10V | | Transistor Case Style | TO-220AB | | Drain Source Voltage Vds | 30V | | Operating Temperature Max | 175°C | | Continuous Drain Current Id | 120A | | Drain Source On State Resistance | 6000µohm | | Gate Source Threshold Voltage Max | 1V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:8651035/) _IR_ MOSFET™ IRL3803PbF ~~ae~~ ## ~~Cinfineon~~ - Logic - Level Gate Drive - Advanced Process Technology - Ultra Low On-Resistance - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Fully Avalanche Rated - Lead-Free ## **Description** Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. > D **VDSS 30V** > G **RDS(on) max. 0.006**  > S **ID 140A**  ~~==~~ TO-220AB IRL3803PbF **G D S** Gate Drain Source ~~es~~ |**Symbol**
~~————————~~|**Parameter**
~~————————~~|**Max.**
~~ee~~|**Units**
~~ee~~| |---|---|---|---| |ID@ TC= 25°C
~~————————~~|Continuous Drain Current, VGS@ 10V
~~————————~~|140
~~ee~~|A
~~ee~~| |ID @TC= 100°C
~~————————~~|Continuous Drain Current, VGS @10V
~~————————~~|98
~~ee~~|| |IDM
~~————————~~|Pulsed Drain Current
~~————————~~|470
~~ee~~|| |PD@TC= 25°C
~~————————~~|Maximum Power Dissipation
~~————————~~|200
~~ee~~|W
~~ee~~| |~~————————~~|Linear Derating Factor
~~————————~~|1.3
~~ee~~|W/°C
~~ee~~| |VGS|Gate-to-Source Voltage|± 16|V| |EAS|Single Pulse Avalanche Energy |610|mJ| |IAR|Avalanche Current|71|A| |EAR
~~a~~|Repetitive Avalanche Energy 
~~a~~|20
~~ne~~|mJ
~~ne~~| |dv/dt
~~a~~|Peak Diode Recoverydv/dt
~~a~~|5.0
~~ne~~|V/ns
~~ne~~| |TJ
TSTG
~~a~~|Operating Junction and
Storage Temperature Range
~~a~~|-55 to + 175
~~ne~~|°C
~~ne~~| |~~a~~|Soldering Temperature, for 10 seconds
~~a~~|300(1.6mm from case)
~~ne~~|| ||Mountingtorque,6-32 or M3 screw.|10 lbf•in(1.1N•m)|| ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Symbol**|**Parameter**|**Typ. **|**Max.**|**Units**| |RJC|Junction-to-Case|–––|0.75|°C/W| |RJC|Case-to-Sink,Flat,Greased Surface|0.50|–––|| |RJA|Junction-to-Ambient|–––|62|| 1 **Rev. 2.1** , 2021-02-25 |~~es~~|**Parameter**
~~es~~|**Min.**
~~es~~|**Typ. Max. Units**
~~es~~|**Typ. Max. Units**
~~es~~|**Typ. Max. Units**
~~es~~|**Typ. Max. Units**
**Conditions**
~~es~~| |---|---|---|---|---|---|---| |V(BR)DSS
~~es~~
~~po~~|Drain-to-Source Breakdown Voltage
~~es~~
~~po~~|30
~~es~~
~~po~~|–––
~~es~~
~~po~~|–––
~~es~~
~~po~~|V
~~es~~
~~po~~|VGS= 0V,ID= 250µA
~~es~~
~~po~~| |V(BR)DSS/TJ
~~NS~~|Breakdown Voltage Temp. Coefficient
|––– 0.052
|––– 0.052
|–––
|V/°C Reference to 25°C
|V/°C Reference to 25°C,ID= 1mA
~~**p**O~~
| |RDS(on)
~~NS~~|Static Drain-to-Source On-
Resistance
~~**e**ee~~
~~e~~|–––
~~ee~~|–––
~~ee~~|0.006
~~ee~~|
~~ee~~|VGS= 10V,ID= 71A
~~**p**O~~
~~ee~~| |||–––
~~ee~~
~~e~~|–––
~~ee~~|0.009
~~ee~~||VGS= 4.5V,ID= 59A
~~**p**O~~
~~ee~~
~~T~~| |VGS(th)
~~NS ~~|Gate Threshold Voltage
~~**e**ee~~
~~e~~|1.0
~~ee~~
~~e~~|–––
~~ee~~|–––
~~ee~~|V
~~ee~~|VDS= VGS,ID= 250µA
~~**p**O~~
~~ee~~
~~T~~| |gfs
~~NS ~~
~~ee~~|Forward Trans conductance

~~e~~
~~ee~~|55

~~e~~|–––

~~EE~~|–––

~~EE~~|S
|VDS= 25V,ID= 71A
~~**p**O~~

~~T~~| |IDSS
~~ee~~
~~A~~|Drain-to-Source Leakage Current
~~ee~~|–––|–––
~~EE~~|25
~~EE~~|µA
OO|VDS= 30V,VGS= 0V| |||–––|–––
~~EE~~
~~DG~~|250
~~EE~~
~~DG~~||VDS= 24V,VGS= 0V,TJ=150°C| |IGSS
~~ee~~
~~A~~
~~ee~~|Gate-to-Source Forward Leakage
~~ee~~
~~DO~~|–––
~~DO~~|–––
~~EE~~
~~DO~~
~~DG~~|100
~~EE~~
~~DO~~
~~DG~~
~~|~~|nA
OO
~~|~~|VGS= 16V
~~|~~| ||Gate-to-Source Reverse Leakage|–––|–––
~~DG~~|-100
~~DG~~
~~|~~||VGS= -16V
~~|~~| |Qg
~~ee~~|Total Gate Charge|–––|–––|140
~~|~~|nC
~~|~~|ID= 71A
VDS= 24V
VGS= 4.5V,See Fig. 6 and 13
~~|~~| |Qgs
~~ee~~
~~a~~|Gate-to-Source Charge|–––|–––|41
~~|~~||| |Qgd
~~aes~~|Gate-to-Drain Charge|–––|–––|78||| |td(on)
~~aes~~|Turn-On DelayTime|–––|14|–––|ns
|VDD= 15V
ID= 71A
RG= 1.3
RD= 0.2 See Fig. 10
| |tr
~~es~~|Rise Time|–––|230|–––||| |td(off)
~~ed~~|Turn-Off DelayTime
|–––
|29
|–––
||| |tf
~~ed~~|Fall Time
|–––
|35
|–––
||| |LD
~~edee~~
~~a~~|Internal Drain Inductance
~~ee~~
~~ee ee~~|–––
~~ee~~
~~ee~~|4.5
~~ee~~
~~ee~~|–––
~~ee~~
~~ee~~|nH
~~ee~~|Between lead,
6mm (0.25in.)
from package
and center of die contact
~~ee~~
~~:~~| |LS
~~ee~~
~~a~~
~~nd~~|Internal Source Inductance
~~ee~~
~~ee ee~~
|–––
~~ee~~
~~ee~~
|7.5
~~ee~~
~~ee~~
|–––
~~ee~~
~~ee~~
||| |Ciss
~~a~~
~~nd~~|Input Capacitance
~~ee ee~~
|–––
~~ee~~
|5000
~~ee~~
|–––
~~ee~~
|pF|VGS= 0V
VDS= 25V
ƒ= 1.0MHz,See Fig. 5
~~:~~| |Coss
~~nd~~|Output Capacitance
|–––
|1800
|–––
||| |Crss
~~I~~|Reverse Transfer Capacitance
~~I~~|–––
~~I~~|880
~~I~~|–––
~~I~~||| |**Source-Drain Ratings and Characteristics**
~~I~~||||||| |~~po~~
~~Ft)~~|**Parameter**
~~po~~
~~Ft)~~|**Min.**
~~po~~
~~Ft)~~|**Typ. Max. Units**
~~po~~
~~Ft)~~|**. Max. Units**
~~po~~
~~Ft)~~|**. Max. Units**
~~po~~
~~Ft)~~|**. Max. Units**
**Conditions**
~~po~~
~~et~~| |IS
~~po~~
~~Ft)~~|Continuous Source Current
(BodyDiode)
~~po~~
~~Ft)~~|–––
~~po~~
~~Ft)~~|–––
~~po~~
~~Ft)~~|140
~~po~~
~~Ft)~~|A
~~po~~
~~Ft)~~|MOSFET symbol
showing the
integral reverse
p-njunction diode.
~~po~~
~~et~~| |ISM
~~Ft)~~|Pulsed Source Current
(BodyDiode)
~~Ft)~~|–––
~~Ft)~~|–––
~~Ft)~~|470
~~Ft)~~||| |VSD
~~Ft)~~
~~eG~~
~~—~~|Diode Forward Voltage
~~Ft)~~
~~eG~~|–––
~~Ft)~~
~~eG~~
~~oe~~|–––
~~Ft)~~
~~eG~~
~~oe~~|1.3
~~Ft)~~
~~eG~~
~~ss~~|V
~~Ft)~~
~~eG~~
~~ss~~|TJ= 25°C,IS= 71A,VGS= 0V
~~et~~
~~eG~~| |trr
~~eG~~
~~ee~~
~~—~~|Reverse Recovery Time
~~eG~~
~~ee~~|–––
~~eG~~
~~ee~~
~~oe~~|120
~~eG~~
~~ee~~
~~oe~~|180
~~eG~~
~~ee~~
~~ss~~|ns T
~~eG~~
~~ee~~
~~ss~~|ns TJ= 25°C ,IF= 71A
nC di/dt = 100A/µs
~~eG~~
~~ee~~| |Qrr
~~ee~~
~~—~~|Reverse RecoveryCharge
~~ee~~|–––
~~ee~~
~~oe~~|450
~~ee~~
~~oe~~|680
~~ee~~
~~ss~~|nC di/dt = 100A/
~~ee~~
~~ss~~|| |ton
~~—~~|Forward Turn-On Time|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)
~~oe ss~~||||| >  Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) >  VDD = 15V, starting TJ = 25°C, L = 180H, RG = 25, IAS = 20A.(See Figure 12) >  ISD  71A, di/dt  130A/µs, VDD  V(BR)DSS, TJ  175°C. >  Pulse width  300µs; duty cycle  2%. -  Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the package refer to Design TIP # 93-4 2 ~~a~~ **Rev. 2.1** , 2021-02-25 ~~Cinfineon~~ IRL3803PbF ~~pe~~ **Fig. 1** Typical Output Characteristics TJ = 25°C **Fig. 3** Typical Transfer Characteristics **Fig. 2** Typical Output Characteristics TJ = 175°C **Fig. 4** Normalized On-Resistance vs. Temperature 3 **Rev. 2.1** , 2021-02-25 ~~Cinfineon~~ IRL3803PbF ~~pe~~ **Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage **Fig. 7** Typical Source-to-Drain Diode Forward Voltage **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage **Fig 8.** Maximum Safe Operating Area **Rev. 2.1** , 2021-02-25 4 ~~Cinfineon~~ IRL3803PbF ~~pe~~ **Fig 10a.** Switching Time Test Circuit **Fig 9.** Maximum Drain Current vs. Case Temperature **Fig 10b.** Switching Time Waveforms **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case **Rev. 2.1** , 2021-02-25 5 ~~Cinfineon~~ IRL3803PbF ~~pe~~ **Fig 12a.** Unclamped Inductive Test Circuit **Fig 12c.** Maximum Avalanche Energy vs. Drain Current **Fig 12b.** Unclamped Inductive Waveforms **Fig 13a.** Gate Charge Waveform **Fig 13b.** Gate Charge Test Circuit 6 **Rev. 2.1** , 2021-02-25 ~~Cinfineon~~ IRL3803PbF ~~pe~~ **Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power **Rev. 2.1** , 2021-02-25 7 ~~Cinfi~~ IRL3803PbF ~~pO~~ ## **TO-220Package Outline** (Dimensions are shown in millimeters (inches) Note: For the most current drawing please refer to website at http://www.irf.com/packaging ## **TO-220 Part Marking Information** Note: For the most current drawing please refer to website at http://www.irf.com/packaging 8 **Rev. 2.1** , 2021-02-25 ~~Cinfineon~~ IRL3803PbF ~~po~~ **Revision History** **Date Rev. Comments**  Changed datasheet with Infineon logo - all pages.  Updated datasheet based on IFX template. 02/25/2021 2.1  Removed “HEXFET® Power MOSFET” added “IR MOSFETTM “-page1  Corrected TO-220 Package outline on page 8.  Added disclaimer on last page. ~~[[~~ ## **Trademarks of Infineon Technologies AG** µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 ## **Other Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2016-04-19 IMPORTANT NOTICE** For further information on the product, technology, **Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies office **Infineon Technologies AG characteristics (“Beschaffenheitsgarantie”) .** (www.infineon.com). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified **© 2016 Infineon Technologies AG. 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