# Power MOSFET, N Channel, 55 V, 75 A, 8000 µohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2725999/)

**URL**: https://novapart.co/products/IRL3705ZSTRLPBF/power-mosfet-n-channel-55-v-75-a-8000-ohm-to-263ab
**SKU**: IRL3705ZSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1200
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 130W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 8000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725999/)

PD - 95579A 

## **Features** 

Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 8.0m Ω<br>DS(on)<br>G<br>ID = 75A<br>S<br>**----- End of picture text -----**<br>


TO-220AB D[2] Pak TO-262 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF 

## **Absolute Maximum Ratings** 

|~~arr~~|**Parameter**<br>~~arr~~|**Max.**<br>~~ne~~|**Units**<br>~~ne~~|
|---|---|---|---|
|ID @TC= 25°C<br>~~arr~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~arr~~|86<br>~~ne~~|A<br>~~ne~~<br>|
|ID @TC= 100°C <br>~~arr~~<br>~~a~~|Continuous Drain Current,VGS@ 10V<br>~~arr~~<br>~~a~~|61<br>~~ne~~||
|ID @TC= 25°C<br>~~rr~~<br>~~a©~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~rr~~<br>~~a©~~|75<br>~~ne~~||
|IDM<br>~~rr~~<br>~~a©~~<br>~~a~~|Pulsed Drain Current<br>~~rr~~<br>~~a©~~<br>~~a~~|340<br>~~ne~~<br>||
|PD @TC= 25°C<br>~~rr~~<br>~~©~~<br>~~aa~~|Power Dissipation<br>~~rr~~<br>~~©~~<br>~~aa~~|130<br>~~ne~~<br>|W<br>~~ne~~<br>|
|~~aa~~|Linear DeratingFactor<br>~~aa~~|0.88<br>|W/°C<br>|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~apf~~<br>~~2—_.—-—__————<_~~|± 16<br>~~pf~~<br>~~—_.—-—__————<_~~|V<br>~~pf~~<br>~~|~~|
|EAS (Thermallylimited) <br>|Single Pulse Avalanche Energy<br>~~pf~~<br>~~2—_.—-—__————<_~~|120<br>~~pf~~<br>~~—_.—-—__————<_~~|mJ<br>~~pf~~<br>~~|~~|
|EAS (Tested)|Single Pulse Avalanche EnergyTested Value<br>~~2—_.—-—__————<_~~<br>~~SS~~|180<br>~~—_.—-—__————<_~~||
|IAR<br>~~ee~~|Avalanche Current<br>~~2 —_.—-—__————<_~~<br>~~SS~~<br>~~ee~~|See Fig.12a, 12b, 15, 16<br>~~—_.—-—__————<_~~|A<br>~~|~~|
|EAR<br>~~ee~~|Repetitive Avalanche Energy<br>~~SS~~<br>~~ee~~||mJ|
|TJ<br>TSTG<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~SS~~<br>~~ee~~|-55  to + 175|°C|
|~~ee~~|SolderingTemperature,for 10 seconds<br>~~ee~~|300 (1.6mm from case )||
|~~ee~~|MountingTorque, 6-32 or M3screw<br>~~ee~~<br>~~©~~|10 lbf in (1.1N m)<br>~~©~~|~~©~~|



**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~pT~~|55<br>~~pT~~|–––<br>~~pT~~|–––<br>~~pT~~|V<br>~~pT~~|VGS= 0V, ID= 250µA<br>~~pT~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~pf~~|–––<br>~~pf~~<br>~~|~~|0.055<br>~~pf~~<br>~~||~~|–––<br>~~pf~~<br>~~|~~|V/°C<br>~~pf~~|Reference to 25°C, ID= 1mA<br>~~pf~~<br>~~©~~|
|RDS(on)|Static Drain-to-Source On-Resistance|–––<br>~~|~~<br>~~|~~|6.5<br>~~||~~<br>~~||~~|8.0<br>~~|~~<br>~~|~~|mΩ|VGS= 10V, ID= 52A<br>~~©~~<br>~~©~~|
|||–––<br>~~|~~<br>~~|~~<br>~~|~~|–––<br>~~| |~~<br>~~||~~<br>~~||~~|11<br>~~|~~<br>~~|~~<br>~~|~~||VGS= 5.0V, ID= 43A<br>~~©~~<br>~~©~~<br>~~e~~|
|||–––<br>~~|~~<br>~~|~~|–––<br>~~| |~~<br>~~||~~|12<br>~~|~~<br>~~|~~||VGS= 4.5V, ID= 30A<br>~~©~~<br>~~e~~|
|VGS(th)|Gate Threshold Voltage<br>~~pT~~|1.0<br>~~|~~<br>~~pT~~|–––<br>~~| |~~<br>~~pT~~|3.0<br>~~|~~<br>~~pT~~|V<br>~~pT~~|VDS= VGS, ID= 250µA<br>~~e~~<br>~~pT~~|
|gfs<br>~~ee~~|Forward Transconductance<br>~~ee~~|150<br>~~|~~|–––<br>~~||~~|–––<br>~~|~~|V|VDS= 25V, ID= 52A|
|IDSS<br>~~ee~~|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~|~~<br>~~ee~~|–––<br>~~||~~<br>~~ee~~|20<br>~~|~~<br>~~ee~~|µA<br>~~eee~~|VDS= 55V, VGS= 0V<br>~~eee~~|
|||–––<br>~~|~~<br>~~ee~~|–––<br>~~||~~<br>~~ee~~|250<br>~~|~~<br>~~ee~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~eee~~|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~rq~~|–––<br><br>~~ee~~<br>~~rq~~<br>~~a~~|–––<br>~~|~~<br>~~ee~~<br>~~rq~~<br>~~ee~~|200<br>~~|~~<br>~~ee~~<br>~~rq~~|nA<br>~~eee~~<br>~~rq~~|VGS= 16V<br>~~eee~~<br>~~rq~~|
||Gate-to-Source Reverse Leakage<br>~~rq~~|–––<br>~~rq~~<br>~~a~~|–––<br>~~rq~~<br>~~ee~~|-200<br>~~rq~~||VGS= -16V<br>~~rq~~|
|Qg|Total Gate Charge<br>~~po~~|–––<br>~~a~~<br>~~po~~|40<br>~~ee~~<br>~~po~~|60<br>~~po~~|nC|VGS= 5.0V<br>ID= 43A<br>VDS= 44V<br>~~©~~|
|Qgs<br>~~po~~|Gate-to-Source Charge<br>~~po~~<br>~~po~~|–––<br>~~po~~<br>~~po~~|12<br>~~po~~<br>~~po~~|–––<br>~~po~~<br>~~po~~|||
|Qgd<br>~~po~~|Gate-to-Drain("Miller")Charge<br>~~po~~|–––<br>~~po~~|21<br>~~po~~|–––<br>~~po~~|||
|td(on)<br>~~po~~|Turn-On DelayTime<br>~~po~~<br>~~po~~|–––<br>~~po~~<br>~~po~~|17<br>~~po~~<br>~~po~~|–––<br>~~po~~<br>~~po~~|ns|VDD= 28V<br>ID= 43A<br>RG= 4.3Ω<br>VGS= 5.0V<br>~~©~~<br>~~©~~<br>~~(~~|
|tr|Rise Time<br>~~po~~|–––<br>~~po~~|240<br>~~po~~|–––<br>~~po~~|||
|td(off)|Turn-Off DelayTime<br>~~po~~<br>~~ee~~|–––<br>~~po~~|26<br>~~po~~|–––<br>~~po~~|||
|tf|Fall Time<br>~~ee~~<br>~~ee~~|–––|83|–––|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~ee~~|–––|4.5|–––|nH|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~©~~<br>~~(~~|
|LS<br>~~a~~|Internal Source Inductance<br>~~ee~~<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>|7.5<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|||
|Ciss<br>~~a~~|Input Capacitance<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>|2880<br>~~ee~~<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|pF<br>~~a~~|VGS= 0V<br>VDS= 25V<br>ƒ=1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~apo~~|–––<br>~~po~~|420<br>~~ee~~<br>~~po~~|–––<br>~~ee~~<br>~~po~~|||
|Crss|Reverse Transfer Capacitance<br>~~po~~|–––<br>~~po~~|220<br>~~po~~|–––<br>~~po~~|||
|Coss<br>~~a~~|Output Capacitance<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|1500<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~<br>~~ee~~|–––<br>~~a~~|330<br>~~a~~|–––<br>~~a~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~®~~|
|Cosseff.<br>~~a~~|Effective Output Capacitance<br>~~a~~<br>~~ee~~|–––<br>~~a~~|510<br>~~a~~|–––<br>~~a~~||VGS= 0V, VDS= 0V to 44V<br>~~®~~|



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1000 1000<br>VGS VGS<br>TOP           12V TOP           12V<br>10V 10V<br>100 8.0V5.0V 8.0V5.0V<br>4.5V 4.5V<br>3.5V 3.5V<br>3.0V 100 3.0V<br>10 BOTTOM 2.8V BOTTOM 2.8V<br>1 S S oo ort P/ U<br>10<br>2.8V 2.8V<br>0.1 MATE RAR i sa ee easel eee<br>≤ 60µs PULSE WIDTH<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>0.01 Fat a +H 1 TUITE AME | LLIN<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 120<br>F ie 100 TJ = 25°C<br>T = 175°C<br>J<br>100<br>P T | a<br>10 eai e ee iAeee|eee|ffeettes eetyeee 8060 PP f | = fof| Z| Ltt TJ = 175°C e<br>ae 2 ee ee ee ee ee ee 40 ff<br>1 TJ = 25°C<br>20<br>i ie VDS = 15V VDS = 8.0V<br>≤ 60µs PULSE WIDTH<br>0.1 0<br>0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120<br>ID,Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>)<br>(Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>10000 |<br>a<br>Ciss<br>Se it<br>1000 Coss<br>S e g ot<br>Crss<br>100 C o_——l—|<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000.00<br>ee ee 0<br>TJ = 175°C<br>100.00<br>a ae<br>ee Ae ee TJ = 25°C ee<br>10.00<br>p e f |<br>VGS = 0V<br>PPaie f p<br>1.00<br>0.0 0.5 1.0 1.5 2.0<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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6.0<br>ID= 52A VDS= 44V<br>5.0 VDS= 28V<br>VDS= 11V<br>Fa e<br>4.0<br>t iwaZa<br>3.0<br>| =<br>2.0<br>A<br>1.0 A e<br>0.0<br>0 10 20 30 40<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>A |<br>100<br>S ON EE |<br>100µsec<br>T MS<br>10<br>a E el<br>1msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse 10msec<br>1 ee PE Ci<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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100 2.0<br>90 Limited By Package IVD GS = 43A= 5.0V<br>80 at o r} E S TALLYJ)<br>70<br>1.5<br>aa A<br>60<br>50<br>IN<br>40<br>A 1.0 va<br>30<br>20<br>PN L L<br>10<br>0 es 0.5 TPL EEL EEL<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10 R1 R1 R2 R2 Ri (°C/W)     τ i (sec)<br>0.05 τ J τ J τ C τ 0.5413     0.000384<br>0.020.01 τ 1 τ 1 τ 2 τ 2 0.5985     0.002778<br>0.01 Ci=  τ i / Ri<br>SINGLE PULSE Ci i / Ri Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>A il<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID,  Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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500<br>15V<br>ID<br>TOP         5.7A<br>VDS L DRIVER 400 BOTTOM 52A8.5A<br>V ia<br>RG D.U.T + 300 A<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01 Ω 200<br>m eh U NTTTTT<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS 100<br>tp<br>S SS<br>0<br>25 50 75 100 125 150 175<br>/ | Starting TJ , Junction Temperature (°C)<br>|<br>IAS 7a LN  ULL<br>Fig 12c.   Maximum Avalanche Energy<br>Fig 12b.   Unclamped Inductive Waveforms<br>vs. Drain Current<br>QG<br>o QGS w QGD 3.0<br>VG<br>| / 2.5 T OT<br>Charge 7 2.0 T ANCE<br>Fig 13a.   Basic Gate Charge Waveform ID = 250µA<br>1.51.0 CSP EELEE<br>L<br>VCC<br>DUT<br>n ET 0.5 E<br>1K -75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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L<br>VCC<br>DUT<br>0 n<br>1K<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

**Fig 14.** Threshold Voltage vs. Temperature 

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100<br>Duty Cycle = Single Pulse<br>0.01 es ee ee<br>Allowed avalanche Current vs<br>10 0.05 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>0.10<br>avalanche losses<br>P S t te<br>P SS ST<br>1<br>en |<br>0.1<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>150 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>125 ID = 52A   Purely a thermal phenomenon and failure occurs at a<br>a     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>100 N U ee 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>75   Figures 12a, 12b.<br>P YLE 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>50<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>B EDSSSCHEEEE<br>    voltage increase during avalanche).<br>25 6. Iav = Allowable avalanche current.<br>T ST 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 L ETTE   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024ASSEMBLED ON WW 02, 2000 INTERNATIONALRECTIFIER co F530S NSN<br>IN THE ASSEMBLY LINE "L" LOGO IER 002.<br>80 24 DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>assembly line position LOT CODE Yt be WEEK 02<br>"Lead — Free” L L LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TeaR P0024) DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY WU<br>YEAR 0 =  2000<br>LOT CODE 1?U fU WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO a TORIRL3103L719¢<br>1789 DATE CODE<br>Note: “P”indicatesin assembly"Lead line- Free”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL —S<br>RECTIFIER IRL3103L<br>LOGO TOR P719A.<br>17 89 DATE CODE<br>ASSEMBLY P =  DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

**==> picture [60 x 9] intentionally omitted <==**

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www.irf.com<br>**----- End of picture text -----**<br>


11 

Dimensions are shown in millimeters (inches) 

**==> picture [248 x 266] intentionally omitted <==**

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>eee cehlitomeal 1.75 (.069) 4<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>ia 16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>° 12.80 (.504) 23.90 (.941) male<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| ;<br>30.40 (1.197)<br>NOTES :       MAX.<br>5 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961)3 At 4<br>**----- End of picture text -----**<br>


Notes: ®® Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). @ Limited by TJmax, starting TJ = 25°C, © 

This value determined from sample failure population. 100% tested to this value in production. 

L = 0.09mH RG = 25 Ω , IAS = 52A, VGS =10V. 

Part not  recommended for use above this value. 

This is only applied to TO-220AB pakcage. 

This is applied to D[2] Pak, when mounted on 1" square PCB (FR- 4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at TJ of approximately 90°C. 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS[is rising from 0 to 80% V] DSS[ .] 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/2010 

www.irf.com 

12 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL3705ZSTRLPBF/power-mosfet-n-channel-55-v-75-a-8000-ohm-to-263ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl3705zstrlpbf/mosfet-n-ch-55v-75a-to-263ab/dp/2725999)
---

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