# Power MOSFET, N Channel, 55 V, 89 A, 0.01 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2725998/)

**URL**: https://novapart.co/products/IRL3705NSTRLPBF/power-mosfet-n-channel-55-v-89-a-001-ohm-to-263
**SKU**: IRL3705NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.7400
**Stock**: 500+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 170W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 89A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725998/)

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D<br>Vpss = 55V<br>R -001 Ω<br>G DS(on) = VY.<br>Ip = 89A®@<br>S<br><>, Ca<br>i>VY 4<br>¢ JA LZ?"<br>   D   Pak2  TO-262<br>**----- End of picture text -----**<br>


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θ<br>Ric<br>**----- End of picture text -----**<br>


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[Viemoss | Drain-to-Source Breakdown Vottage | 85 |——|—- | V |Vos=OV.lp=250HA<br>∆ ∆<br>[ Viewoss! Ty] Breakdown Voltage Temp. Coefficient] —— |0.056| — | VC] Reference to 25°C, Ip=1mAS<br>Rps(on) Static Drain-to-Source On-Resistance | —- | — [0.012] Ω<br>fom [aeoenn one ETB Renee —<br>[Vestn [= |= [oore<br>fds || ForwardGate ThresholdTransconductanceVoltage «|‘| 807.0 |[ — -|—|—-|2.0 | V§ | Vos= Ves,fo=25V,lo=46A0250A<br>a ee | [Tas]<br>fess [Gate-to-Source aiet-Seree Fora tenege = [—[ 10 nA ee<br>a, Qgs | TG a te-to-Sourceatcate cage ReverseCharge Leakage | | ——— fas | —|-100,—| 19 nC | Vps a = 44V<br>[tujon) | Turn-OnDelayTime | —~ | 12 | Vop = 28V<br>It sf RiseTime | | 140 Ip = 46A<br>Ω,<br>a Ro=059 Ω,  See Fig.<br>and center of die contact<br>ts [Inna souce cance | — | 78 |— | | eect’ fd conch10 06<br>[Ciss | Input Capacitance | -—~ | 3600] —— | Ves = OV<br>[Coss | Output Capacitance ——=«dt|: | 870| — | pF | Vos = 25V<br>[Crs | Reverse Transfer Capacitance | —— |320/——| _| f = 1.0MHz, See Fig. 50<br>Source-Drain Ratings and Characteristics<br>[__Parameter____|<br>Is Continuous Source Current Min.|Typ[Max.[Units| MOSFET Conditions  symbol | D<br>Ism Pulsed Source Current integral reverse G<br>Vso | Diode Forward Voltage =i —-|—-| 13 | V | T= 25°C, ls=46A, Ves=0VO S |<br>tr Reverse Recovery Te ff ae [of ng [Tsao es aek<br>Q; | Reverse Recovery Charge | ——| 290] 440 | nC | ailat = 100A/us ©©<br>Notes:<br>≤  ≤<br>**----- End of picture text -----**<br>


Uses IRL3705N data and test conditions 

Rg=25_ Ω , las = 46A. (See Figure ISD ≤ , ≤ ≤ 46A, di/dt 250A/Us, Vop ≤ 

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1000<br>                   VGS<br> TOP           15V<br>                   12V<br>                   10V<br>                   8.0V<br>                   6.0V<br>                   4.0V<br>                   3.0V > ae ee<br> BOTTOM   2.5V<br>100 IVT<br>Yt<br>10<br>2.5V<br> 20µs PULSE WIDTH<br>aYN a  T   = 25°CJ a<br>1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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1000<br>Pee Fee T  = 25°CJ ee es ee ee<br>e e ae<br>T  = 175°CJ<br>100<br>| ee r<br>=== 4S SSS<br>oe) Ane ee ee<br>—AR<br>10<br>pyF| | fy ft tpE<br> V     = 25VDS<br>1 AR}ree  ppfT  20µs PULSE WIDTH<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>                   VGS<br> TOP           15V<br>                   12V<br>                   10V<br>                   8.0V<br>                   6.0V<br>                   4.0V<br>                   3.0V<br> BOTTOM   2.5V | oat<br>100 Ll AE<br>— fo<br>10 2.5V<br> 20µs PULSE WIDTH<br>1 CePTee  T   = 175°CJ<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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3.0<br>2.5 c I    = 77AD ee<br>EEEEEE<br>ae ee<br>2.0<br>SI GI ES 00EHEREREERERED?<br>22<br>1.5<br>PEE Ee<br>PTE ee<br>1.0<br>0.5 FaAt OfGAAAGIAESORAAAALD<br>0.0 P e E  V      = 10VGS<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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6000<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>5000 TT] Ciss C      = CC      = C     + Crss         gdoss        ds         gd<br>Nd<br>4000<br>Pens<br>OT Soo<br>3000 Coss<br>SeyaN<br>2000 NE<br>ll Crss<br>1000 el<br>0 eeOTee<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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15<br>I    = 46AD<br>V      = 44VDS<br>V      = 28VDS<br>12 HH H KEE<br>py<br>PE<br>9<br>pt | | | ta<br>6 EA Mh<br>TAT<br>PTAA<br>3<br>oe<br> FOR TEST CIRCUIT<br>0 y Jif |  ti4-i     SEE FIGURE 13 0]<br>0 20 40 60 80 100 120 140<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>SSS Ee<br>10µs<br>ee Seal Denn tal<br>100<br>PL | | ear pS SO<br>100µs<br>100<br>T  = 175°CJ<br>1ms<br>— T  = 25°CJ ————— 10 COT SE all<br>SE SS e e<br>| es en 10ms<br>T     = 25°CC<br>T     = 175°CJ<br>10 /PFALt | R V      = 0V te GS A 1 f  Single Pulse CEE e nT<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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100<br>LIMITED BY PACKAGE<br>80<br>me aan<br>co oe<br>60 PETE TNE TT<br>tte tT PNG TE<br>40<br>\<br>20 P OET]ittitt<br>et} ttyTT T TT TTTNTANT TTTNTAN TTTNTANTNTANTAN<br>0 PPP ETP<br>25 50 75 100 125 150 175<br>T   , Case TemperatureCC (  C)°°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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 1<br>tte tT PNG TE soy ≤ 0.1 %<br>40<br>\ Fig 10a. Switching Time Test Circuit<br>20 P OET]ittitt exc ss<br>VDS<br>90%<br>et} ttyTT T TT TTTNTANT TTTNTAN TTTNTANTNTANTAN<br>0 PPP ETP |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureCC (  C)°° |<br>10%<br>VGS<br>Fig 9. Maximum Drain Current Vs. td(on) ve tr . t ole d(off) tf<br>Case Temperature<br>Fig 10b. Switching Time Waveforms<br> 1<br>D = 0.50<br>meee eee til ee<br>pt em<br>0.20<br>| J<br>0.1 >g 0.10 COMMSenerin tTI<br>Ca<br>0.05 PDM<br>0.02 sen 7 SINGLE PULSE PET t1<br>0.01 (THERMAL RESPONSE) t2<br>o e ar<br>Notes:<br>1. Duty factor D = t   / t1 2<br>To 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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800<br>                    ID<br>TOP            19A<br>WERE<br>                   33A<br>15V BOTTOM    46A<br>At<br>600<br>\ | |<br>VDS L DRIVER PNPNe Nee<br>400<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>ia 10V TL iN NOK el ~ N .<br>tp 0.01Ω 200<br>SSN tt<br>| Oe<br>Fig -OSS<br> 12a. Unclamped Inductive Test Circuit 0 Pt  V      = 25VDD 7) S38<br>25 50 75 100 125 150 175<br>V(BR)DSS Starting T  , Junction Temperature (°C)J<br>_— tp —><br>Fig 12c. Maximum.  Avalanche Energy<br>/ ‘y Vs. Drain Current<br>/ |<br>IAS<br>Current Regulator<br>Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>QG .3µF<br>5.0 VeT ae| J | i +<br>D.U.T. -VDS<br>QGS QGD<br>VGS<br>VG 3mA Tl<br>ivan of<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>_    •  Low Stray Inductance<br>@ •  Ground Plane<br> •   Low Leakage Inductance<br>| I - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>——| 7<br>t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop a<br>® Inductor Curent UW<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## Dimensions are shown in millimeters (inches) 

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T HIS IS AN IRF530S WITHLOT  CODE 8024 INTERNATIONAL SY PART NUMBER<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO IeaR 002.<br>Note: "P" in ass embly lineposition indicates "Lead-Free" ASSEMBLYLOT CODE 80YotL + on \? 24 DAT E CODEYEAR 0 =  2000WEEK 02LINE L<br>PART NUMBER<br>INTERNATIONAL |<br>RECTIFIER F530S<br>LOGO TeaR P0024)<br>8024 DATE CODE<br>ASSEMBLYLOT CODE U Tam?t y ov YEAR 0 =  2000P =  DESIGNATES  LEAD-FREEPRODUCT (OPTIONAL)<br>WEEK 02<br>A =  AS SEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## TO-262 Package Outline 

## Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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EXAMPLE: THIS  IS  AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASS EMBLED ON WW 19, 1997IN THE AS SEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO —IORIRL3103L719¢<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASS EMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## OR 

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PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRL3103L<br>LOGO TEARP719A<br>DATE CODE<br>17 89<br>P =  DES IGNATES  LEAD-FREE<br>AS SEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  AS SEMBLY S ITE CODE<br>**----- End of picture text -----**<br>


Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>ia i : Te<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>00°00 [| N) 1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


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FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>: 12.80 (.504) 23.90 (.941) iI<br>, 4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES : SO || L       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IE 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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