# Power MOSFET, N Channel, 55 V, 77 A, 0.01 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8651019/)

**URL**: https://novapart.co/products/IRL3705NPBF/power-mosfet-n-channel-55-v-77-a-001-ohm-to-220ab
**SKU**: IRL3705NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8360
**Stock**: 500+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 130W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 77A |
| Drain Source On State Resistance | 0.01ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8651019/)

Cinfin eon 

IRL3705NPbF 

- Logic - Level Gate Drive 

- Advanced Process Technology 

- Dynamic dv/dt Rating 

- 175°C Operating Temperature 

- Fast Switching 

- Fully Avalanche Rated 

- Lead-Free 

## **Description** 

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. 

HEXFET[® ] Power MOSFET D **VDSS 55V** G **RDS(on) max. 0.01**  S **ID 89A**  ~~=p~~ S D G TO-220AB IRL3705NPbF **G D S** Gate Drain Source ~~-——}~~ 

|**Standard Pack**|
|---|
|**Base part number**<br>**Package Type**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**|
|IRL3705NPbF<br>TO-220<br>Tube<br>50<br>IRL3705NPbF|
|**Absolute Maximum Ratings **|
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>89<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>63<br>IDM<br>Pulsed Drain Current<br>310<br>W<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>170<br>Linear Derating Factor<br>1.1<br>W/°C<br>VGS<br>Gate-to-SourceVoltage<br>± 16<br>V<br>EAS<br>Single Pulse Avalanche Energy <br>340<br>mJ<br>IAR<br>Avalanche Current<br>46<br>A<br>EAR<br>Repetitive Avalanche Energy <br>17<br>mJ<br>dv/dt<br>Peak Diode Recoverydv/dt<br>5.0<br>V/ns<br>~~es~~<br>~~—————~~<br>~~en ae~~<br>~~eS~~<br>~~———————————~~<br>~~a~~<br>~~—————————~~|
|TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>Mountingtorque,6-32 or M3 screw<br>10 lbf•in(1.1N•m)<br>~~Be~~|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RJC<br>Junction-to-Case<br>–––<br>0.90|
|°C/W<br>RCS<br>Case-to-Sink,Flat,Greased Surface<br>0.50<br>–––|
|RJA<br>Junction-to-Ambient<br>–––<br>62|



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~~Cinfineon~~ 

IRL3705NPbF ~~Ll~~ 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~——~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. Max. Units**<br>~~ee~~|**. Max. Units**<br>~~ee~~|**. Max. Units**<br>~~ee~~|**. Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~——~~|Drain-to-Source Breakdown Voltage<br>~~ee~~|55<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|V<br>~~ee~~<br>~~GO~~|VGS =0V, ID =250µA|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~——~~<br>~~a ~~|Breakdown Voltage Temp. Coefficient<br>~~ee ~~<br> ~~GQ~~|––– 0.056<br> ~~ee~~<br>~~GQ~~|––– 0.056<br>~~ee ~~<br>~~GQ~~|–––<br> ~~ee~~<br>~~GQ~~|V/°C Reference to 25°C<br>~~ee~~<br>~~GQ~~<br>~~GO~~|V/°C Reference to 25°C,ID= 1mA<br>~~GQ~~|
|RDS(on)<br>~~of~~|Static Drain-to-Source On-<br>Resistance<br>~~of~~|–––<br>~~of~~|–––<br>~~of~~|0.010<br>~~of~~|<br>~~GO~~<br>~~of~~|VGS= 10V,ID= 46A<br>~~of~~|
|||–––<br>~~of~~|–––<br>~~of~~|0.012<br>~~of~~||VGS= 5.0V,ID= 46A<br>~~of~~|
|||–––<br>~~of~~|–––<br>~~of~~|0.018<br>~~of~~||VGS= 4.0V,ID= 39A<br>~~of~~|
|VGS(th)<br>~~re~~|Gate Threshold Voltage<br>~~re~~|1.0<br>~~re~~|–––<br>~~re~~|2.0<br>~~re~~|V<br>~~re~~|VDS= VGS,ID= 250µA<br>~~re~~|
|gfs<br>~~re~~|Forward Trans conductance<br>~~re~~|50<br>~~re~~|–––<br>~~re~~|–––<br>~~re~~|S<br>~~re~~|VDS =25V, ID =46A<br>~~re~~|
|IDSS<br>~~a~~|Drain-to-Source Leakage Current<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|25<br>~~a~~|µA<br>~~a~~|VDS =55V, VGS =0V<br>~~a~~|
|||–––<br>~~a~~|–––<br>~~a~~|250<br>~~a~~||VDS =44V,VGS =0V,TJ =150°C<br>~~a~~|
|IGSS<br>~~—~~|Gate-to-Source Forward Leakage<br>~~—~~|–––<br>~~—~~|–––<br>~~—~~|100<br>~~—~~|nA<br>~~—~~|VGS =16V<br>~~—~~|
||Gate-to-Source Reverse Leakage<br>~~—~~|–––<br>~~—~~|–––<br>~~—~~|-100<br>~~—~~||VGS = -16V<br>~~—~~|
|Qg<br>~~—~~<br>~~ee~~|Total Gate Charge<br>~~—~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~|–––<br>~~—~~<br>~~ee~~|98<br>~~—~~<br>~~ee~~|nC<br>~~—~~<br>~~ee~~<br>~~re~~|ID= 46A<br>VDS= 44V<br>VGS=5.0V, SeeFig.6 and13<br>~~—~~<br>~~ee~~<br>~~re~~|
|g<br>Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|19<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~—————~~|Gate-to-Drain Charge<br>~~ee~~<br>~~—————~~|–––<br>~~ee~~|–––<br>~~ee~~|49<br>~~ee~~|||
|gd<br>td(on)<br>~~ee~~<br>~~—————~~|Turn-On Delay Time<br>~~ee~~<br>~~—————~~|–––<br>~~ee~~|12<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~<br>~~re~~<br>~~ee)~~|VDD= 28V<br>ID= 46A<br>RG= 1.8VGS= 5.0V<br>RD=0.59See Fig. 10<br>~~ee~~<br>~~re~~<br>~~)~~|
|d(on)<br>tr<br>~~—————~~|RiseTime<br>~~—————~~|–––|140|–––|||
|td(off)<br>~~—————~~<br>~~a~~|Turn-Off DelayTime<br>~~—————~~<br>|–––<br>|37<br>|–––<br>|||
|d(off)<br>tf<br>~~—————~~<br>~~aee~~|Fall Time<br>~~—————~~<br>~~ee~~|–––<br>~~ee~~|78<br>~~ee~~|–––<br>~~ee~~|||
|LD<br>~~—————~~<br>~~aee~~|Internal Drain Inductance<br>~~—————~~<br>~~ee~~|–––<br>~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|nH<br>~~re~~<br>~~ee)~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~re~~<br>~~)~~<br>||
|LS<br>~~ee~~<br>~~ft~~|Internal Source Inductance<br>~~ee~~<br>~~ft~~|–––<br>~~ee~~<br>~~ft~~|7.5<br>~~ee~~<br>~~ft~~|–––<br>~~ee~~<br>~~ft~~|||
|Ciss<br>~~ee~~<br>~~ft~~<br>~~re~~|Input Capacitance<br>~~ee~~<br>~~ft~~<br>~~re~~|–––<br>~~ee~~<br>~~ft~~<br>~~re~~|3600<br>~~ee~~<br>~~ft~~<br>~~re~~|–––<br>~~ee~~<br>~~ft~~<br>~~re~~|pF<br>~~ee)~~<br>~~re~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~)~~<br>|<br>~~re~~|
|Coss<br>~~re~~|OutputCapacitance<br>~~re~~|–––<br>~~re~~|870<br>~~re~~|–––<br>~~re~~|||
|Crss<br>~~re~~|ReverseTransferCapacitance<br>~~re~~|–––<br>~~re~~|320<br>~~re~~|–––<br>~~re~~|||
|**Source-Drain Ratings and Characteristics**|||||||
|~~a~~|**Parameter **<br>~~GG~~|**Min.**<br>~~GG~~|**Typ. M**<br>~~GG~~|**. Max.**<br>~~GG ~~|**Units**<br> ~~GG~~|**Conditions**<br>~~GG~~|
|IS<br>~~**a**~~|Continuous Source Current<br>(Body Diode)<br>~~2~~|–––<br>~~2~~|–––<br>~~2~~|89<br>~~2~~|A<br>~~2~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~2~~<br>ons|
|ISM<br>~~**a**~~|Pulsed Source Current<br>(Body Diode)<br>~~2~~|–––<br>~~2~~|–––<br>~~2~~|310<br>~~2~~|||
|VSD<br>~~po~~<br>~~——~~|Diode Forward Voltage<br>~~po~~<br>~~ee~~|–––<br>~~po~~<br>~~ee~~|–––<br>~~po~~<br>~~ee~~|1.3<br>~~po~~<br>~~ee~~|V<br>~~po~~<br>~~oe~~|TJ= 25°C,IS= 46A,VGS= 0V<br>~~po~~|
|trr<br>~~——~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|94<br>~~ee~~|140<br>~~ee~~|ns  T<br>~~oe~~|ns  TJ= 25°C ,IF= 46A<br>nC   di/dt = 100A/µs<br>~~G~~|
|Qrr<br>~~——~~<br>~~es~~|Reverse RecoveryCharge<br>~~ee~~<br>~~G~~|–––<br>~~ee~~<br>~~G~~|290<br>~~ee~~<br>~~G~~|440<br>~~ee~~<br>~~G~~|nC   di/dt = 100A/<br>~~oe~~<br>~~G~~||
|ton<br>~~——~~<br>~~es~~|Forward Turn-On Time<br>~~ee~~<br>~~G~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~ee oe~~<br>~~G~~|||||



-  Repetitive rating;  pulse width limited by max. junction temperature. (See fig.11) 

-  VDD = 25V, starting  TJ = 25°C, L = 320H, RG = 25, IAS = 46A.(See fig.12) 

-  ISD 46A, di/dt 250A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

-  Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the package refer to Design TIP # 93-4 

. 

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**==> picture [546 x 324] intentionally omitted <==**

**----- Start of picture text -----**<br>
IRL3705NPbF<br>1000                    VGS  1000                    VGS<br> TOP           15V  TOP           15V<br>                   12V                    12V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   6.0V                    6.0V<br>                   4.0V                    4.0V<br>                   3.0V                    3.0V<br> BOTTOM   2.5V  BOTTOM   2.5V<br>100 100<br>bt! | [tA]<br>2.5V<br>10 10<br>2.5V<br> 20µs PULSE WIDTH  20µs PULSE WIDTH<br>1 eee  T   = 25°CJ A 1  T   = 175°CJ<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

**Fig. 2** Typical Output Characteristics 

**==> picture [549 x 323] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 3.0<br> I    = 77AD<br>2.5<br>T  = 25°CJ<br>T  = 175°CJ<br>100 deer] 2.0 TIE.<br>1.5<br>10 1.0<br>MOLL) rete<br>0.5<br> V     = 25V DS<br>1 ALLY)  20µs PULSE WIDTH  A 0.0 epi  V      = 10V GS<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>Fig. 3  Typical Transfer Characteristics<br>Fig. 4  Normalized On-Resistance<br>vs. Temperature<br>3  2018-05-25<br>=—_————<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


~~Cinfineon~~ 

IRL3705NPbF ~~Ll~~ 

**==> picture [548 x 666] intentionally omitted <==**

**----- Start of picture text -----**<br>
6000 15<br>V      = 0V,         f = 1MHzGS I    = 46AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds  V      = 44VDS<br>5000 C iss C      = CC      = C     + Crss         gdoss        ds         gd 12  V      = 28VDS<br>4000<br>9<br>3000 C oss<br>oe nnnEDs<br>6<br>2000<br>C rss 3<br>1000<br> FOR TEST CIRCUIT<br>    SEE FIGURE 13<br>0 Seniescet A 0 pee<br>1 10 100 0 20 40 60 80 100 120 140<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000<br>1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY R DS(on)<br>—— Fan ean ss 10µs<br>100<br>100µs<br>100<br>T  = 175J ° C<br>T  = 25°CJ 1ms<br>10<br>10ms<br> T     = 25°CC<br> T     = 175°CJ<br>10 vail/ V      = 0V GS A  Single Pulse S I :f<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 Bee s<br>1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>Fig. 7  Typical Source-to-Drain Diode<br>Fig 8.   Maximum Safe Operating Area<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>D<br>I   , Drain Current (A)<br>SD<br>I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

4 2018-05-25 ~~re~~ 

IRL3705NPbF 

**==> picture [512 x 253] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>LIMITED BY PACKAGE<br>eee Rp<br>80<br>may, P| | : Ves por<br>HN EE iol<br>60<br>PET TENA EEE Tt Disov<br>tii tt} TN Ee iwi<br>40 SERENE :<br>SRR ReREANE Fig 10a.   Switching Time Test Circuit<br>20<br>PET EEE EL EEL wos f_\<br>[ttt t tt yt ty x |<br>0<br>25 50 75 100 125 150 175 |<br>°<br>PEELE /\ :<br>T   , Case TemperatureC (  C)<br>D<br>I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**==> picture [489 x 223] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1<br>D = 0.50<br>0.20<br>0.10 Sit<br>0.1<br>0.05 AA PDM<br>0.02 SINGLE PULSE t1<br>0.01 (THERMAL RESPONSE) t2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>rl 2. Peak TJ = P DM x  ZthJC iz + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

2018-05-25 

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**==> picture [225 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>10V<br>t 0.01<br>p<br>a y tt Y<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [120 x 33] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**==> picture [266 x 253] intentionally omitted <==**

**----- Start of picture text -----**<br>
800<br>                    ID<br>TOP            19A<br>                   33A<br>BOTTOM    46A<br>600<br>\<br>IN \<br>400<br>)<br>200<br> V      = 25VDD<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**==> picture [19 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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IRL3705NPbF ~~[~~ 

**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

2018-05-25 

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**TO-220 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-220 Part Marking Information** 

TO-220AB packages are not recommended for Surface Mount Application. 

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IRL3705NPbF ~~Cinfineon Ll~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] **Moisture Sensitivity Level** TO-220 N/A **RoHS Compliant** Yes ~~—————~~ † Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Changed datasheet with Infineon logo - all pages.|
|05/25/2018||Corrected TO-220 Package outline on page 8.|
|||Added disclaimer on lastpage.|



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

9 

2018-05-25 



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