# Power MOSFET, N Channel, 30 V, 64 A, 0.012 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2781150/)

**URL**: https://novapart.co/products/IRL3103STRLPBF/power-mosfet-n-channel-30-v-64-a-0012-ohm-to-263ab
**SKU**: IRL3103STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7040
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 94W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 94W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.012ohm |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 64A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781150/)

PD - 95150 

Advanced Process Technology Surface Mount (IRL3103S) Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. 

## IRL3103SPbF IRL3103LPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 30V<br>R  = 12m Ω<br>DS(on)<br>G<br>ID = 64A<br>S<br>**----- End of picture text -----**<br>


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D [2] Pak TO-262<br>IRL3103S IRL3103L<br>**----- End of picture text -----**<br>


## The through-hole version (IRL3103L) is available for lowprofile applications. **Absolute Maximum Ratings** 

«Fn? **Parameter Max. Units** a ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64 _ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A a IDM es Pulsed Drain Current 220 ~~a~~ PD @TC = 25°C Power Dissipation 94 W ~~a~~ Linear Derating Factor 0.63 W/°C ~~Io,~~ VGS Gate-to-Source Voltage ± 16 V ~~a~~ IAR Avalanche Current 34 A ~~>~~ EAR Repetitive Avalanche Energy 22 mJ ~~OO~~ dv/dt Peak Diode Recovery dv/dt ~~od~~ 5.0 ~~_~~ V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~———CO~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~I~~ Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.6|°C/W|
|RθJA|Junction-to-Ambient(PCB mount)**|–––|40||



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## IRL3103S/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|es<br>~~a~~|**Parameter**<br>es<br>~~a~~|**Min. **<br>es<br>~~es ee~~<br>|**Typ. **<br>es<br>~~ee~~<br>|**Max.**<br>es<br>|**Units**<br>es<br>|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a~~<br>~~ee~~|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~ee~~|30<br>~~es ee~~<br><br>~~**ee**~~|–––<br>~~ee~~<br><br>~~**e**s~~|–––<br>|V<br>|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~aes~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>~~aes~~<br>~~ee~~|–––<br>~~es ee~~<br>~~es~~<br>~~**ee**~~|0.028<br>~~ee~~<br>~~es~~<br>~~**e**s~~|–––<br>~~es~~<br>~~ee~~|V/°C<br>~~es~~<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~:~~|
|RDS(on)<br>~~ee~~|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~|~~|–––<br>~~**ee**~~<br>~~||~~|–––<br>~~**e**s~~<br>~~|~~|12<br>~~ee~~<br>~~|~~|mΩ<br>~~ee~~|VGS= 10V, ID= 34A<br>~~:~~<br>~~@~~|
|||–––<br>~~**ee**~~<br>~~||~~|–––<br>~~**e**s~~<br>~~|~~|16<br>~~ee~~<br>~~|~~||VGS= 4.5V, ID= 28A<br>~~:~~<br>~~@~~|
|VGS(th)<br>~~ee~~<br>~~es~~<br>~~es~~|Gate Threshold Voltage<br>~~ee~~<br>~~|~~<br>~~es~~<br>~~es~~|1.0<br>~~**ee** ~~<br>~~| |~~<br>~~es~~<br>~~ee~~|–––<br> ~~**e**s~~<br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~|~~<br>~~es~~|V<br>~~ee~~<br>~~es~~|VDS= VGS, ID= 250µA<br>~~:~~<br>~~@~~<br>~~@~~|
|gfs<br>~~es~~|Forward Transconductance<br>~~es~~|22<br>~~ee~~|–––<br>~~ee~~|–––|S|VDS= 25V, ID= 34A<br>~~@~~|
|IDSS<br>~~es~~<br>~~PEE~~|Drain-to-Source Leakage Current<br>~~es ~~<br>~~PEE~~<br>~~**|**~~|–––<br> ~~ee~~<br>~~PEE~~<br>~~**|**~~|–––<br>~~ee~~<br>~~PEE~~|25<br>~~PEE~~|µA<br>~~PEE~~|VDS= 30V, VGS= 0V<br>~~@~~|
|||–––<br>~~PEE~~<br>~~**|**~~|–––<br>~~PEE~~|250<br>~~PEE~~||VDS= 24V, VGS= 0V, TJ= 150°C|
|IGSS<br>~~ee~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~**|**~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~|nA<br>~~_~~|VGS= 16V|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>|-100<br>~~ee~~<br>||VGS= -16V|
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>|33<br>~~ee~~<br>|nC|ID= 34A<br>VDS= 24V<br>VGS= 4.5V, See Fig. 6 and 13|
|Qgs<br>~~eses~~|Gate-to-Source Charge<br>~~es~~|–––<br>ee<br>~~es~~|–––<br>~~es~~|5.9<br>~~es~~|||
|Qgd<br>~~es~~<br>~~Se~~|Gate-to-Drain("Miller")Charge<br><br>~~Se~~|–––<br>ee<br>|–––<br>|17<br>|||
|td(on)<br>~~Se~~<br>~~**e**~~<br>~~es~~<br>a|Turn-On Delay Time<br>~~Se~~<br>~~**e**s~~<br>|–––<br>~~s~~<br>es<br>|8.9<br>~~s~~<br>|–––<br>~~s~~<br>|~~ae~~|VDD= 15V<br>ID= 34A<br>RG= 1.8Ω<br>VGS= 4.5V, See Fig. 10<br>,|
|tr<br>~~**e**~~<br>~~es~~<br>a|Rise Time<br>~~**e**s~~<br>~~e~~<br>|–––<br>~~s~~<br>~~e~~<br>es<br>|120<br>~~s~~<br>~~e~~<br>|–––<br>~~s~~<br>~~e~~<br>|||
|td(off)<br>~~**e**~~<br>~~es~~<br>a|Turn-Off Delay Time<br>~~**e**s~~<br>|–––<br>~~s~~<br>es<br>|14<br>~~s~~<br>|–––<br>~~s~~<br>|||
|d(off)<br>tf<br>~~ae~~|Fall Time<br>~~ae~~|–––<br>~~ae~~|9.1<br>~~ae~~|–––<br>~~ae~~|||
|LD<br>~~ae~~|Internal Drain Inductance<br>~~ae~~|–––<br>~~ae~~|4.5<br>~~ae~~|–––<br>~~ae~~|nH<br>~~ae~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>,|
|LS<br>~~ae~~<br>~~pf~~|Internal Source Inductance<br>~~ae~~<br>~~pf~~|–––<br>~~ae~~|7.5<br>~~ae~~|–––<br>~~ae~~|||
|Ciss<br>~~pf~~<br>es~~ee~~<br>es|Input Capacitance<br>~~pf~~<br>~~ee~~|–––<br>~~ee~~<br>es|1650<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~pf~~<br>es~~ee~~<br>es|Output Capacitance<br>~~pf~~<br>~~ee~~|–––<br>~~ee~~<br>es|650<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>es~~ee~~<br>es|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>es|110<br>~~ee~~|–––<br>~~ee~~|||
|EAS<br>es|Single Pulse Avalanche Energy|––– 1320<br>es|1320|130|mJ<br>IAS= 34A, L = 0.22mH||



**Notes:** 

- ~~©~~ Repetitive rating;  pulse width limited by ~~@~~ Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) © This is a typical value at device destruction and represents operation outside rated limits. 

- Starting TJ = 25°C, L = 220µH 

- R ©© G = 25 Ω , IAS = 34A, VGS=10V (See Figure 12) This is a calculated value limited to TJ = 175°C . 

- 6) ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

- **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

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## IRL3103S/LPbF 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>4.5V 4.5V<br>3.7V 3.7V<br>3.5V 3.5V<br>3.3V 3.3V<br>3.0V 2 a 3.0V a<br>BOTTOM 2.7V BOTTOM 2.7V<br> 100  100<br>| Oy et te -—\-<br>I ane ge 2.7V<br> 10  10<br>2.7V<br>ee 2 ee eel 7 | Titi fT [TT]]<br> 1 ‘ananima 20µs PULSE WIDTHT  = 25J °C  1 aTe HI 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 56A<br>SaaS a Pe, tt EEL ELE LI<br>or Pt T  = 25  CJJ ° 2.0 PETEEL_ EE LEL EI<br>ft | _ | if oft |<br> 100 Tt e er T  = 175  CJJ ° PLETE TT ee<br>1.5<br>a=,eeee=,eeeeeeeeee ee ee ee<br>4oooeeeeee Sanne Geen<br>1.0<br>SEVER<br> 10<br>AL} | ft Ebert | ttt tt<br>= 0.5 PTT TE EEE [TTL]<br>V      = 15VDSDS<br> 1 pppFi} tttFi} ttt ttt ppt 20µs PULSE WIDTH 0.0 PF EL E L_EL ELLETTL LE VGS =  LI 10V<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000 SaaS a<br>T  = 25  CJJ °<br>or Pt<br>ft | _ | if oft |<br> 100 Tt e er T  = 175  CJJ °<br>a=,eeee=,eeeeeeeeee ee ee ee<br>4oooeeeeee<br>SEVER<br> 10<br>AL} | ft<br>=<br>V      = 15VDSDS<br> 1 pppFi} tttFi} ttt ttt ppt 20µs PULSE WIDTH<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRL3103S/LPbF 

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15<br>IDD = 34A<br>Po , | cE cE<br>12 | | | | VDSDS = 24V 24V | | |<br>VDSDS = 15V 15V<br>| |<br>9 pit<br>| | gy gy<br>6<br>a<br>nan wen<br>3 Tf Hr TI<br>oF<br>FOR TEST CIRCUIT<br>0 pYi|Yi|| oe | | SEE FIGURE       1313<br>0 10 20 30 40<br>Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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3000 15<br>VGS = 0V, f = 1MHz IDD = 34A<br>| Ciss = Cgs + Cgd , C      SHORTEDds Po , | cE cE<br>2500 — CCrssoss == CCgdds + Cgd 12 | | | | VDSDS = 24V 24V | | |<br>VDSDS = 15V 15V<br>2000 RSL Ciss T LL | |<br>CNS 9 pit<br>1500<br>Coss<br>IE E | | gy gy<br>6<br>1000 rT LUNE a nan wen<br>ee ll 3 Tf Hr TI<br>500<br>TTT Crss ON TT oF<br>FOR TEST CIRCUIT<br>0 es a ee 0 pYi|Yi|| oe | | SEE FIGURE       1313<br> 1  10  100 0 10 20 30<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000 = a i 1000 O PERATIONINTHIS AREA<br> 100<br>T  = 175  CJ °<br>P| [| [A YA | | fT | ft ff ee ee<br> 10 Y | {| Yi7i } | tt ft tl eS, ee<br>===HE == ====A psPsy s Ptoonsee<br> 1 pi— i,If) T  = 25  CJ ° Ltt fo PeS ee ee ee ee S eeeaee eeetmsec i<br>a Tj = 175°C<br>0.1 SF ee V      = 0 V GS , pee[Smoeruse||<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 1 10<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRL3103S/LPbF 

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70 RD<br>60 SEPEPEELELEL, VDS<br>Se VGS<br>50 TSA RG D.U.T. +<br>- [V] DD<br>FHOEEE NCEE .<br>HEELS EEE<br>40 VGS<br>Os<br>30 FEE Pulse Width Duty Factor  ≤ 0.1 %≤ 1  µs<br>Oa OOEEE PS Eo :<br>20 FeEEPEEeEeee<br>PEE ELEELLELINE,ANN Fig 10a.   Switching Time Test Circuit<br>10 HOE VDS<br>a EE EEN 90%<br>a | r{_\<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>10% /\ |<br>Fig 9.   Maximum Drain Current Vs. VGS I$}\« le >| oeX-><br>Case Temperature td(on) tr td(off) tf<br>Fig 10b.   Switching Time Waveforms<br> 10<br>Pté—C~sTSC(‘(‘CSTSCOC*CTSCa MST fT TT<br>a a a a ee ee Oe ee Oe Oe Rs ee eG OO One On Gs GesGG OOO<br> 1 TT e D = 0.50  TTe e e<br>_ S S aEe<br>0.20<br>SSpT ee| ———ema ——_aaenep CTC CTC<br>0.10<br>0.05 PDM<br>e S eee eI<br>0.1 ee 0.02 = SINGLE PULSE ee ee t1<br>0.01 (THERMAL RESPONSE)<br>eele ea |a | aeTTa ee esee ee== 22ess OO t 2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRL3103S/LPbF 

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15V<br>VD S L DR IVER<br>R G D .U .T +<br>- [VD D]<br>IA S<br>—<br>eb 20VVGS<br>tp 0.0 1 Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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~ tp V (BR)DSS<br>/ |\<br>/ \<br>/ \<br>/<br>y \<br>I AS<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>a<br>VGS<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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240<br>ID<br>ft<br>200 NEE TOP 14A 24A<br>BOTTOM 34A<br>KURREae<br>E NE<br>160<br>120 NENG<br>SNBN EEE<br>SKATE<br>80<br>__ AAA<br>TESST<br>40<br>__ | | SSN<br>itt} TSS<br>0 iti ti po ESS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>; 50K Ω<br>12V .2 µ F<br>.3 µ F<br>res | +<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRL3103S/LPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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D.U.T * + Circuit Layout Considerations<br>   •   Low Stray Inductance<br> •   Ground Plane<br> •   Low Leakage Inductance<br>|(aa)| -       Current Transformer<br>+<br>ae<br>- - +<br>a<br>00<br>RG •   dv/dt controlled by RG +<br>ce •   ISD controlled by Duty Factor "D" - VDD<br>•   D.U.T. - Device Under Test<br>VGS<br>**----- End of picture text -----**<br>


- Reverse Polarity of D.U.T for P-Channel 

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O) Driver Gate Drive<br>P.W.<br>Period D =<br> es P.W. | Period<br>[          ] ***VGS=10V<br>a _\<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt JN<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>[    ]VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% [    ]ISD<br>**----- End of picture text -----**<br>


*** VGS = 5.0V for Logic Level and 3V Drive Devices 

**Fig 14.** For N-channel HEXFET[®] power MOSFETs 

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## IRL3103S/LPbF 

## D[2] Pak Package Outline 

## D[2] Pak Part Marking Information (Lead-Free) 

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T HIS  IS  AN IR F 530S  WIT H PAR T  NU MB E R<br>L OT  CODE  8024 INT E R NAT IONAL cS<br>AS S E MB L E D ON WW 02, 2000 R E CT IF IE R F 530S<br>IN T H E  AS S E MB L Y L INE  "L " L OGO TOR 002i<br>pos ition indicates  "L ead-F ree"Note: "P " in as s embly line AS S E MB L YL OT  CODE 80JTUl a U tLUl24 DAT E  CODEYE AR  0 =WE E K  02L INE  L  2000<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>INT E R NAT ION ALR E CT IF IE R a F 530S |<br>L OGO TeaR80 P002A24 DAT E  CODE<br>AS S E MB L YL OT  CODE [JUL]GOuO YE AR  0 =P  =  DE S IGNAT E S  L E AD-F R E EP R ODU CT  (OP T ION AL) 2000<br>WE E K  02<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


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## IRL3103S/LPbF 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

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E XAMPLE : T HIS  IS  AN IRL3103L<br>LOT  CODE  1789 PAR T  NU MB E R<br>AS S E MB LE D ON WW 19, 1997 INT E RNAT IONAL —<br>IN T HE  AS S E MB LY LINE  "C" RE CT IF IE RLOGO TeaRIRL3103L719C<br>Note: "P" in as s embly line 17 89 DAT E  CODE<br>pos ition indicates  "Lead-F ree" AS S E MB LY YE AR  7 =  1997<br>LOT  CODE WE E K 19<br>LINE  C<br>OR<br>PAR T  NU MB E R<br>INT E RNAT IONAL _<br>RE CT IF IE R IRL3103L<br>LOGO TeaRP719A<br>DAT E  CODE<br>17 89<br>P =  DE S IGNAT E S  LE AD-F RE E<br>AS S E MB LY PR ODU CT  (OPT IONAL)<br>LOT  CODE YE AR  7 =  1997<br>WE E K 19<br>A =  AS S E MB LY S IT E  CODE<br>**----- End of picture text -----**<br>


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## IRL3103S/LPbF 

## D[2] Pak Tape & Reel Information 

Dimensions are shown in millimeters (inches) 

**==> picture [333 x 132] intentionally omitted <==**

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TR R<br>1.60 (.063 )<br>1.50 (.059 )<br>1.60  (.0 63 )<br>4.10 (.161)3.90 (.153) 1.50  (.0 59 ) 0 .3 68  (.0 14 5)<br>a L 4 “TT 0 .3 42  (.0 13 5)<br>F EE D  D IRE CTIO N 1.8 5 (.073) j 1 1.60 (.457 )<br>1.6 5 (.065) 1 1.40 (.449 ) 24 .30  (.95 7)<br>15.4 2 (.609 )<br>23 .90  (.94 1)<br>15.2 2 (.601 )<br>TRL<br>— O49TTRaa 1.7 5 (.069 ) tL ft<br>10.90  (.42 9) 1.2 5 (.049 )<br>10.70  (.42 1) 4.72  (.1 36)<br>16 .1 0 (.6 34 ) 4.52  (.1 78)<br>15 .9 0 (.6 26 )<br>**----- End of picture text -----**<br>


**==> picture [61 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
F EE D  D IRE CTIO N<br>**----- End of picture text -----**<br>


**==> picture [325 x 153] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50  (.532) 27.40 (1.079)<br>4 12.80  (.504) 23.90 (.941) It<br>4<br>330.00 60.00 (2.362)<br>(14.173)       M IN .<br>  MAX.<br>| SO |<br>30.40 (1.197)<br>N O TE S : oo Jit       M A X .<br>1.   C O M F O R M S T O  EIA-418.2.   C O N TR O LLIN G  D IM EN SIO N : M ILLIM ET E R . 26.40 (1.039)24.40 (.961) IE 4<br>3.   D IM E N SIO N  M EA S UR ED  @  H U B .<br>3<br>**----- End of picture text -----**<br>


4.   IN C LU D ES  FLA N G E D IS TO R T IO N  @  O U TE R  ED G E . 

Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL3103STRLPBF/power-mosfet-n-channel-30-v-64-a-0012-ohm-to-263ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irl3103strlpbf/mosfet-n-ch-30v-64a-to-263ab/dp/2781150)
---

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