# Power MOSFET, N Channel, 30 V, 56 A, 0.012 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8650969/)

**URL**: https://novapart.co/products/IRL3103PBF/power-mosfet-n-channel-30-v-56-a-0012-ohm-to-220ab
**SKU**: IRL3103PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6850
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 83W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 83W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.012ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650969/)

PD - 94994 

## IRL3103PbF 

HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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**----- Start of picture text -----**<br>
D<br>VDSS = 30V<br>R  = 12mΩ<br>DS(on)<br>G<br>ID = 64A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**|“Vv”.||
|---|---|---|---|
|or.|**Parameter**<br>or.|**Max.**<br>or.<br>“Vv”.|**Units**<br>or.|
|ID@ TC= 25°C<br>||Continuous Drain Current, VGS@ 10V<br>ee|64<br>“Vv”.<br>ee|A<br>-|
|ID@ TC= 100°C<br>|<br>a|Continuous Drain Current, VGS@ 10V<br>ee<br>a|45<br>ee<br>a||
|IDM<br>|<br>a|Pulsed Drain Current<br>ee<br>a|220<br>ee<br>a||
|PD@TC= 25°C<br>~~a~~<br>~~eS~~|Power Dissipation<br>~~a~~|94<br>~~a~~|W|
|~~eS~~|Linear DeratingFactor|0.63|W/°C|
|VGS<br>~~eS~~<br>~~a~~|Gate-to-Source Voltage|± 16|V|
|IAR<br>~~a~~|Avalanche Current|34|A|
|EAR<br>~~OO~~|Repetitive Avalanche Energy<br>~~OO~~<br>~~-~~|22<br>~~OO~~|mJ<br>~~OO~~|
|dv/dt<br>~~a~~<br>~~———~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~-~~<br>~~———~~|5.0<br>~~a~~<br>~~ee~~|V/ns<br>~~a~~<br>~~ee~~|
|TJ<br>TSTG<br>~~———~~<br>~~oe~~|Operating Junction and<br>Storage Temperature Range<br>~~-~~<br>~~———~~<br>~~oe~~|-55  to + 175<br>~~ee~~<br>|°C<br>~~ee~~|
|~~———~~<br>~~oe~~|SolderingTemperature, for 10 seconds<br>~~———~~<br>~~oette~~|300(1.6mm from case)<br>~~ee~~<br>~~tte~~||
|~~———~~<br>~~oe~~<br>~~OT~~|Mounting torque, 6-32 or M3 srew<br>~~———~~<br>~~oe~~<br>~~OT~~|10 lbf•in (1.1N•m)<br>~~ee~~<br><br>~~OT~~|~~ee~~<br>~~OT~~|



## **Thermal Resistance** 

www.irf.com 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es~~|~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
|ee|**Parameter**<br>ee|**Min. **<br>ee<br>~~es~~|**Typ. **<br>ee<br>~~ee~~|**Max.**<br>ee<br>~~ee~~|**Units**<br>ee|**Conditions**|
|V(BR)DSS<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~|30<br>~~es ~~<br>~~es~~<br>~~es~~|–––<br> ~~ee ~~<br>~~es~~<br>~~es~~|–––<br> ~~ee~~<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~es~~|0.028<br>~~es~~<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA|
|RDS(on)<br>~~eS~~|Static Drain-to-Source On-Resistance<br>~~eS~~<br>FT|–––<br>~~es ~~<br>~~eS~~|–––<br> ~~es~~<br>~~eS~~|12<br>~~eS~~|mΩ|VGS= 10V, ID= 34A<br>~~:~~|
|||–––<br>~~eS~~<br>FT|–––<br>~~eS~~<br>FT|16<br>~~eS~~<br>FT||VGS= 4.5V, ID= 28A<br>~~:~~<br>@|
|VGS(th)<br>~~Rs~~<br>~~es~~|Gate Threshold Voltage<br>~~Rs~~<br>~~es~~|1.0<br>~~Rs~~<br>~~es~~|–––<br>~~Rs~~|–––<br>~~Rs~~|V<br>~~Rs~~|VDS= VGS, ID= 250µA<br>~~@~~|
|gfs<br>~~es~~|Forward Transconductance<br>~~es~~|22<br>~~es~~|–––|–––|S|VDS= 25V, ID= 34A<br>~~@~~|
|IDSS<br>~~es~~<br>~~Ee~~|Drain-to-Source Leakage Current<br>~~es ~~<br>~~Ee~~<br>~~**|**~~|–––<br> ~~es~~<br>~~Ee~~<br>~~**|**~~|–––<br>~~Ee~~|25<br>~~Ee~~|µA<br>~~Ee~~|VDS= 30V, VGS= 0V<br>~~@~~|
|||–––<br>~~Ee~~<br>~~**|**~~<br>~~ee~~|–––<br>~~Ee~~|250<br>~~Ee~~||VDS= 24V, VGS= 0V, TJ= 150°C|
|~~eeee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~**|**~~<br>~~ee~~|–––<br>~~**|**~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS= 16V|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>es<br>|–––<br>~~ee~~<br>|-100<br>~~ee~~<br>||VGS= -16V|
|Qg<br>~~es~~<br>~~ee~~|Total Gate Charge<br>~~es~~<br>|–––<br>~~ee~~<br>~~es~~<br>es<br>|–––<br>~~es~~<br>|33<br>~~es~~<br>|nC|ID= 34A<br>VDS= 24V<br>VGS= 4.5V, See Fig. 6 and 13|
|Qgs<br>~~eees~~<br>~~[>~~|Gate-to-Source Charge<br>~~es~~<br>~~[> —}—}_}~~|–––<br>es<br>~~es~~<br>~~—}—}_}~~|–––<br>~~es~~<br>~~—}—}_}~~|5.9<br>~~es~~<br>~~—}—}_}—~~|||
|Qgd<br>~~ee~~<br>~~[>~~|Gate-to-Drain("Miller")Charge<br><br>~~[> —}—}_}~~|–––<br>es<br><br>~~—}—}_}~~|–––<br><br>~~—}—}_}~~|17<br><br>~~—}—}_}—~~|||
|td(on)<br>~~[>~~<br>~~es~~<br>RR|Turn-On Delay Time<br>~~[> —}—}_}~~<br>~~es~~<br>|–––<br>~~—}—}_}~~<br>~~es~~<br>|8.9<br>~~—}—}_}~~<br>~~es~~<br>|–––<br>~~—}—}_}—~~<br>~~es~~<br>||VDD= 15V<br>ID= 34A<br>RG= 1.8Ω<br>VGS= 4.5V, See Fig. 10<br>®|
|tr<br>~~[>~~<br>~~es~~<br>RRRs|Rise Time<br>~~[> —}—}_}~~<br>~~es~~<br>|–––<br>~~—}—}_}~~<br>~~es~~<br>|120<br>~~—}—}_}~~<br>~~es~~<br>|–––<br>~~—}—}_} —~~<br>~~es~~<br>|||
|td(off)<br>~~es~~<br>RRRs|Turn-Off Delay Time<br>~~es~~<br>|–––<br>~~es~~<br>|14<br>~~es~~<br>|–––<br>~~es~~<br>|||
|d(off)<br>tf<br>Rs~~po~~|Fall Time<br>~~po~~|–––<br>~~po~~|9.1<br>~~po~~|–––<br>~~po~~|||
|LD<br>~~po~~<br>~~FF"~~|Internal Drain Inductance<br>~~po~~<br>~~FF"~~|–––<br>~~po~~<br>~~FF"~~|4.5<br>~~po~~<br>~~FF"~~|–––<br>~~po~~<br>~~FF"~~|~~FF"~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~&~~|
|LS<br>~~po~~<br>~~FF"~~<br>RR|Internal Source Inductance<br>~~po~~<br>~~FF"~~<br>|–––<br>~~po~~<br>~~FF"~~<br>ee<br>|7.5<br>~~po~~<br>~~FF"~~<br>ee<br>|–––<br>~~po~~<br>~~FF"~~|||
|Ciss<br>~~FF"~~<br>~~es~~<br>RR|Input Capacitance<br>~~FF"~~<br>~~es~~<br>|–––<br>~~FF"~~<br>~~es~~<br>ee<br>|1650<br>~~FF"~~<br>~~es~~<br>ee<br>|–––<br>~~FF"~~<br>~~es~~|pF<br>~~FF"~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~&~~|
|Coss<br>RRa|Output Capacitance<br>es|–––<br>ee<br>ee|650<br>ee<br>ee|–––|||
|Crss<br>RRa|Reverse Transfer Capacitance<br>es|–––<br>ee <br>ee|110<br> ee<br>ee|–––|||
|EAS<br>a|Single Pulse Avalanche Energy<br> es|––– 1320<br> ee|1320<br> ee|130|mJ<br>IAS= 34A, L = 0.22mH||



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

Starting TJ = 25°C, L = 220µH 

RG = 25Ω, IAS = 34A, VGS=10V (See Figure 12) 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

© This is a typical value at device destruction and represents operation outside rated limits. 

This is a calculated value limited to TJ = 175°C . 

- @ ISD ≤ 34A ; di/d ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

www.irf.com 

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**----- Start of picture text -----**<br>
 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>4.5V 4.5V<br>3.7V a ee 3.7V a a<br>3.5V 3.5V<br>3.3V 3.3V<br>3.0V 2 a 3.0V a<br>BOTTOM 2.7V BOTTOM 2.7V<br> 100 een) ABN |  100 A A<br>Agee | rr<br>2.7V<br> 10  10<br>2.7V<br> 1 Qnimal‘an 20µs PULSE WIDTHT  = 25J °C  1 UTTM HI | 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 56A<br>== SSS SSS Pe EE ET<br>Hr rf ft T  = 25  CJ ° pt 2.0 PET EEE L PEELE<br> 100 Tt e er T  = 175  CJ ° PTET TET |e<br>oea ee ee 1.5 PTL EL_ ELLELr<br>ee?aa ee eeee ee eee PEL TELL ELLPa<br>1.0<br> 10<br>Att | Peer TTT<br>0.5<br>BSS] ETE EE<br>V      = 15VDS<br> 1 papeFt fT ttp p p 20µs PULSE WIDTH tir 0.0 PF ET E EEEEELELELE TEE VGS = 10V<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3000<br>VGS = 0V, f = 1MHz<br>TT] Ciss = Cgs + Cgd , C      SHORTEDds<br>2500 CCrssoss == CCgdds + Cgd<br>PH<br>2000 Ciss<br>So NOT Sont<br>eet<br>1500<br>Coss<br>S TE<br>a |<br>1000 fs<br>ee TT<br>500<br>RCC Crss Sn<br>0 a S ee oI<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
15<br>ID = 34A<br>Po, ft fF cE<br>12 aan VDS = 24V a<br>VDS = 15V<br>9 aPoP a el<br>tT<br>6 aaa<br>aa.cene<br>aaa<br>3<br>eZ<br>FOR TEST CIRCUIT<br>yZnnm op SEE FIGURE       13<br>0<br>0 10 20 30 40<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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**----- Start of picture text -----**<br>
 1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br> 100 aap>_asn ==: iren e<br>T  = 175  CJ ° 100<br>oo p oss<br> 10 P| | YAY TE es a |<br>100µsec<br>Pf POS TS<br>Se 10 |<br> 1 T  = 25  CJ ° 1msec<br>Tc = 25°C<br>Tj = 175°C 10msec<br>0.1 -HRR- V      = 0 V GS 1 Ped Single Pulse<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>1 10 100<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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4 

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**----- Start of picture text -----**<br>
70 PEt EET TT Vos Rp<br>60 PMPT ANY]Et EP tT tt Ves DUT.<br>50 ath NE Eee Re<br>-<br>PT tT PEN ETT Voo<br>40 pit i tt ye<br>Pit tT tT tT | TN TT )i Ves ≤ 1<br>30 Pt Ee ET EE TNE TE Duty ≤ 0.1 %<br>Pt Factor<br>20 Pt tT EET EE ETN r<br>rt tT et tT TT TN<br>10 Pt | tt ttt tt tT NY VDS Fig 10a. Switching Time Test Circuit<br>Pt tTteEtETtT EEEE TTET TNTY 90% J \<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>Pity tT Tt tt ty 10% / \ /\<br>Fig 9.   Maximum Drain Current Vs. VGS I\« p< >|KTpl< ~<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 10<br>PCT(SOa aCCCeeOGTTee ee eeOCOe<br> 1 rT D = 0.50 TTT Poot<br>e e ——— ee eee<br>0.20<br>SSa ea<br>0.10<br>PDM<br>0.05<br>0.1 e 0.02 ss SINGLE PULSE enelle t1<br>0.01 (THERMAL RESPONSE)<br>—ae7 | | TtTttiy Uhhh UT UTET Notes: t2<br>1. Duty factor D = t   / t1 2<br>i or 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>Fae 20VVGS i<br>tp 0.01Ω<br>LY<br>| _<br>12a. Unclamped Inductive Test Circuit<br>—— tp V(BR)DSS<br>/<br>/ y |\<br>IAS<br>**----- End of picture text -----**<br>


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240<br>ID<br>Pt<br>200 NER TOP 14A 24A<br>BOTTOM 34A<br>KU Eee<br>ENE EEE<br>160<br>NENEE<br>120<br>GNBNES SEES<br>BN NSE<br>80 P| [ANAT]<br>BENG VE<br>40<br>SERRE SNNEEEE<br>pt | tT OSS<br>Eee Eee. ~S<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF !<br>QG .3µF<br>BO | +<br>T O fF D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>= & |<br>Oe.<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


www.irf.com 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

7 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>_ 4 6.10 (.240) gy<br>9<br>15.24 (.600) a ey OC al<br>14.84 (.584) LEAD ASSIGNMENTS<br>1.15 (.045) LEAD ASSIGNMENTS<br>     MIN HEXFET       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| daryo 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X aii [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M = 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) || T<br>2X<br>**----- End of picture text -----**<br>


NOTES: 

1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 2/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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