# Power MOSFET, N Channel, 100 V, 55 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2803425/)

**URL**: https://novapart.co/products/IRL2910STRLPBF/power-mosfet-n-channel-100-v-55-a-0026-ohm-to-263
**SKU**: IRL2910STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1600
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 0.026ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2803425/)

## PD - 95149 

## IRL2910S/LPbF 

Logic-Level Gate Drive Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2910L) is available for lowprofile applications. **Absolute Maximum Ratings** 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 100V<br>R  = 0.026 Ω<br>DS(on)<br>G<br>ID = 55A<br>S<br>**----- End of picture text -----**<br>


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   D   Pak2  T O -262<br>**----- End of picture text -----**<br>


|~~a~~|**Parameter**|**Max.**|**Units**<br>-|
|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~|Continuous Drain Current, VGS@ 10V|55|A|
|ID@ TC= 100°C<br>~~a~~|Continuous Drain Current, VGS@ 10V|39||
|IDM<br>ee|Pulsed Drain Current|190||
|PD@TA= 25°C<br>~~oO~~|Power Dissipation<br>|3.8|W|
|PD@TC= 25°C<br>|Power Dissipation<br>~~a~~|200<br>~~es~~|W<br>~~ee~~|
|~~se~~<br>~~es~~|Linear DeratingFactor<br>~~se~~|1.3<br>~~se~~<br>~~es~~<br>~~ee~~|W/°C<br>~~se~~<br>~~ee~~<br>~~ee~~|
|VGS<br>~~se~~<br>~~ee~~<br>~~es~~<br>~~aa~~|Gate-to-Source Voltage<br>~~se~~<br>~~ee~~<br>~~a~~|± 16<br>~~se~~<br>~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|EAS<br>~~ee~~<br>~~es~~<br>~~aa~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~a~~|520<br>~~es ~~<br>~~ee~~<br>~~ee~~|mJ<br> ~~ee~~<br>~~ee~~<br>~~ee~~|
|IAR<br>~~es~~<br>~~aa~~|Avalanche Current<br>~~a~~|29<br>~~ee~~|A<br>~~ee~~|
|EAR<br>~~aa~~<br>~~es~~|Repetitive Avalanche Energy<br>~~a~~<br>~~Ce~~|20<br>~~Ce~~|mJ<br>~~Ce~~|
|dv/dt<br>~~es~~<br>~~ff~~|Peak Diode Recoverydv/dt<br>~~Ce~~<br>~~ff~~|5.0<br>~~Ce~~<br>~~ff~~|V/ns<br>~~Ce~~|
|TJ<br>TSTG<br>~~ff~~|Operating Junction and<br>Storage Temperature Range<br>~~ff~~|-55  to + 175<br>~~ff~~|°C|
|~~ff~~|Soldering Temperature, for 10 seconds<br>~~ff~~|300 (1.6mm from case )<br>~~ff~~||



04/19/04 

## IRL2910S/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~Rses~~<br>~~es~~<br>~~Rs~~|**Parameter**<br>~~es~~<br><br>|**Min.**<br>~~es~~<br>~~rs~~<br><br>~~OG~~<br>|**Typ. **<br>~~es~~<br>~~de~~<br><br>~~OG~~<br>|**Max.**<br>~~es~~<br>~~de~~<br><br>~~OG~~<br>|**Units**<br>~~es~~<br><br>~~OG~~<br>|**Conditions**<br>~~es~~<br><br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Rses~~<br>~~eses~~<br>~~Rs~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~<br>|100<br>~~es~~<br>~~rs~~<br>~~es~~<br>~~OG~~<br>|–––<br>~~es~~<br>~~de~~<br>~~es~~<br>~~OG~~<br>|–––<br>~~es~~<br>~~de~~<br>~~es~~<br>~~OG~~<br>|V<br>~~es~~<br>~~es~~<br>~~OG~~<br>|VGS= 0V, ID= 250µA<br>~~es~~<br>~~es~~<br>|
|∆V(BR)DSS/∆TJ<br>~~es~~<br>~~Rses~~|Breakdown Voltage Temp. Coefficient<br><br>~~es~~<br>~~**|**~~|–––<br>~~rs ~~<br><br>~~OG~~<br>~~es~~<br>~~**|**~~|0.12<br> ~~de~~<br><br>~~OG~~<br>~~es~~|–––<br>~~de~~<br><br>~~OG~~<br>~~es~~|V/°C<br><br>~~OG~~<br>~~es~~|Reference to 25°C, ID= 1mA<br><br>~~es~~|
|RDS(on)<br>~~Rs~~<br>~~Rs~~|Static Drain-to-Source On-Resistance<br><br>~~**|**~~<br>**|**<br>~~|tT~~<br>|–––<br>~~OG~~<br><br>~~**|**~~<br>**|**|––– <br>~~OG~~<br><br>~~|~~|0.026<br>~~OG~~<br><br>~~|~~|Ω<br>~~OG~~<br><br>|VGS= 10V, ID= 29A<br>|
|||–––<br>~~**|**~~<br>**|**<br>~~|~~|––– <br>|<br>|0.030<br>|<br>||VGS= 5.0V, ID= 29A|
|||–––<br>**|**<br>~~|tT~~<br>|––– <br>|<br>~~tT~~<br>|0.040<br>|<br>~~tT~~<br>||VGS= 4.0V, ID= 24A<br>|
|VGS(th)<br>~~Rses~~|Gate Threshold Voltage<br>~~|tT~~<br>~~es~~|1.0<br>~~|tT~~<br>~~es~~|–––<br>~~tT~~<br>~~es~~|2.0<br>~~tT~~<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~es~~|
|gfs<br>~~Rs~~<br>~~Re~~<br>~~BP~~|Forward Transconductance<br>~~tT~~<br><br>~~Re~~|28<br>~~tT~~<br><br>~~Re~~|–––<br>~~tT~~<br><br>~~Re~~<br>~~SE~~|–––<br>~~tT~~<br><br>~~Re~~<br>~~SE~~|S<br><br>~~Re~~<br>~~SE~~|VDS= 50V, ID= 29A<br><br>~~Re~~<br>~~SE~~|
|IDSS<br>~~BP~~|Drain-to-Source Leakage Current<br>|||–––|–––<br>~~SE~~|25<br>~~SE~~|µA<br>~~SE~~<br>~~PO~~|VDS= 100V, VGS= 0V<br>~~SE~~|
|||–––<br>|||–––<br>~~SE~~<br>|||250<br>~~SE~~||VDS= 80V, VGS= 0V, TJ= 150°C<br>~~SE~~<br>~~PO~~|
|IGSS<br>~~BP~~<br>~~Oo~~<br>~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~Oo~~<br>~~ee~~<br>|–––<br>~~Oo~~<br>~~ee~~<br>|–––<br>~~SE~~<br>~~Oo~~<br>~~ee~~<br>|100<br>~~SE~~<br>~~Oo~~<br>~~ee~~|nA<br>~~SE~~<br>~~Oo~~<br>~~PO~~|VGS= 16V<br>~~SE~~<br>~~Oo~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~Oo~~<br>~~ee~~<br>|–––<br>~~Oo~~<br>~~ee~~<br>|–––<br>~~Oo~~<br>~~ee~~<br>|-100<br>~~Oo~~<br>~~ee~~||VGS= -16V<br>~~Oo~~<br>~~PO~~|
|Qg<br>~~ee~~<br>~~eeee~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|140<br>~~ee~~|nC<br> ~~PO~~|ID= 29A<br>VDS= 80V<br>VGS= 5.0V, See Fig. 6 and 13<br>~~PO~~<br>~~@©~~|
|Qgs<br>~~ee~~<br>~~eeee~~<br>~~es~~<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~|20<br>~~ee ~~|||
|Qgd<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Rs~~|Gate-to-Drain("Miller")Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|81|||
|td(on)<br>~~ee~~<br>~~Rs~~<br>es~~ee~~|Turn-On Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|11<br>~~ee~~|–––|ns|VDD= 50V<br>ID= 29A<br>RG= 1.4Ω,VGS= 5.0V<br>RD= 1.7Ω,See Fig. 10<br>~~@©~~|
|tr<br>~~Rs~~<br>es~~ee~~<br>ee~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|–––|||
|td(off)<br>es~~ee~~<br>ee~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|49<br>~~ee~~<br>~~ee~~|–––|||
|tf<br>ee~~ee~~<br>~~Os~~|Fall Time<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~OO~~|55<br>~~ee~~<br>~~OO~~|–––|||
|LS<br>~~Os~~<br>es|Internal Source Inductance<br>~~a~~|–––<br>~~OO~~|7.5<br>~~OO~~|–––|nH|Between lead,<br>and center of die contact|
|Ciss<br>~~Os~~<br>es<br>es|Input Capacitance<br>~~a~~|–––<br>~~OO~~|3700<br>~~OO~~|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>©|
|Coss<br>es<br>es<br>ee|Output Capacitance<br>ee|–––|630|–––|||
|Crss<br>es<br>ee|Reverse Transfer Capacitance<br>ee|–––|330|–––|||



## **Source-Drain Ratings and Characteristics** 

||**Parameter**<br>~~ee~~<br>~~tH~~|**Min.**<br>eee<br>~~tH~~|**Typ. **<br>eee<br>~~tH~~|**Max.**<br>eee<br>~~tH~~|**Units**<br>~~tH~~|**Conditions**<br>~~tH~~<br>~~GS~~|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~tH~~|–––<br>eee<br>~~tH~~|–––<br>eee<br>~~tH~~|55<br>eee<br>~~tH~~|A<br>~~tH~~<br>~~Gs~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~tH~~<br>~~GS~~<br>os|
|ISM|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~ <br>~~tH~~<br>~~es~~|–––<br> eee<br>~~tH~~|–––<br>eee<br>~~tH~~<br>~~ds~~|190<br>eee<br>~~tH~~<br>~~ds~~|||
|VSD|Diode Forward Voltage<br>~~tH~~<br>~~ns~~<br>~~es~~|–––<br>~~tH~~<br>~~ns~~|–––<br>~~tH~~<br>~~ns~~<br>~~ds~~|1.3<br>~~tH~~<br>~~ns~~<br>~~ds~~|V<br>~~tH~~<br>~~ns~~<br>~~Gs~~|TJ= 25°C, IS= 29A, VGS= 0V<br>~~tH~~<br>~~GS~~<br>~~ns~~<br>os|
|trr|Reverse Recovery Time<br>~~es~~|–––|240<br>~~ds~~|350<br>~~ds~~|ns<br>~~Gs~~|TJ= 25°C, IF= 29A<br>di/dt = 100A/µs<br>os|
|Qrr|Reverse RecoveryCharge<br>~~es~~<br>~~PO~~<br>~~a~~|–––<br>~~PO~~|1.8<br>~~ds~~|2.7<br>~~ds~~|µC<br>~~Gs~~||
|ton|Forward Turn-On Time<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|||||



**Notes:** 

- O® Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) @ VDD = 25V, starting TJ = 25°C, L = 1.2mH © Uses IRL2910 data and test conditions RG = 25 Ω , IAS = 29A. (See Figure 12) 

   - ISD ≤ 29A, di/dt ≤ 490A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C 

- ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

## IRL2910S/LPbF 

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1000 1000<br>                   VGS                     VGS<br> TOP           15V  TOP           15V<br>                   12V                    12V<br>                   10V                    10V<br>                   8.0V LS a el                    8.0V LS a a<br>                   6.0V                    6.0V<br>                   4.0V i                    4.0V 1 a<br>                   3.0V                    3.0V<br> BOTTOM   2.5V  BOTTOM   2.5V<br>100 Pe A 100 wen all<br>SS Sarr<br>eee oo eee<br>YT | Ll mAZee ee peRMD<br>yl [eR] an) a~4Anntll eelSet<br>10 fem 10<br>2.5V<br>bts Es | [L eeA<br>@ AMA EEE ee eee ee | GAA | tity yt yy<br>AA 2.5V 0 y AA iii ft Py PP<br> 20µ s PULSE  W IDTH  20µ s PULSE  W IDTH<br>1 yWalia a  T   = 25°CJ y A 1 GiaYop  T   = 175°CJ<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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1000 == ea See eee ee ee<br>PEER Ee<br>Pi ey | fy tye ye<br>Pr<br>T  = 25°CJ<br>100 Pieeeeeee-——7<br>T  = 175°CJ<br>pe ee<br>a cee<br>Sa0p/5 S08 Seen eee<br>10 Att tt<br>AF<br>Oe| SS ee<br>Pp  V     = 50VDS<br>1 P/E tL  20µs PULSE W IDTH<br>2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>V     , Gate-to-Source Voltage (V)G S<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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3.0<br> I    = 48A ee D<br>2.5 P EE<br>7<br>PEPE PEERY<br>2.0 PPE Ee<br>PEA<br>1.5 DER<br>HERE ORE ORES 72 yy  Cn Ee<br>1.0 SAAR REDS dR<br>Oa a OR<br>0.5 eet PE pr. tt tL LE E<br>0.0 PEE  V       = 10V G S<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Tem perature (°C)J<br>(Norm alized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

## IRL2910S/LPbF 

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**----- Start of picture text -----**<br>
6000 V       = 0V ,         f = 1M HzG S 15 I    = 29AD<br>TT] C      = C     + C     ,   C     SHORTE Diss         gs         gd         ds P {|  V       = 80VDS ae<br>5000 C iss C      = CC      = C     + Crss         gdoss        ds         gd 12  V       = 50V V       = 20VDSDS<br>Sf Ff ~|—<br>4000<br>PSE oo 144+ NBS<br>9<br>0 va<br>3000<br>a A<br>S C oss T 6 TL<br>2000 DS Ahyy<br>C rss 3<br>1000 NINSPSS > paeZannnee<br>FO R TEST CIRCUIT<br>0 STre A 0 Faoyt {AEETT.     SEE  FIGURE  13<br>1 10 100 0 40 80 120 160 200<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000 1000<br> OPE RATION IN THIS AREA LIM ITE D<br>                       BY R DS(on)<br>A a<br>10µ s<br>ee ee ee 100 oei lll<br>100 tT oe eS 100µ s<br>T  = 175°CJ<br>i 10 po PN EG E 1m s is<br>fl T  = 25°CJ a a e l<br>10m s<br> T     = 25°CC<br> T     = 175°CJ<br>10 Sh t oe} V      = 0V G S A 1 «LE  S ingle Pulse 1 S S<br>0.4 0.8 1.2 1.6 2.0 1 10 100 1000<br>V     , Source-to-Drain Voltage (V)S D V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>G S<br>V     , G ate-to-S ource V oltage (V )<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)S D<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

## IRL2910S/LPbF 

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50<br>40<br>PNTT RT<br>30 REE<br>TTS<br>20 NET<br>TTT<br>10 PT TTT TTT yy<br>0<br>25 50 75 100 125 150 175<br>T  , Case Tem perature (°C)C<br>Sa eeeeeeeeee<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature<br>I  , Drain Current (Am ps)D<br>**----- End of picture text -----**<br>


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RD<br>VDS<br>—<br>VGS<br>D.U.T.<br>RG<br>i | +- [V] DD<br>Pulse Width  F 5.0V ≤ 1  µs<br>Duty Factor  ≤ 0.1 %<br>  Switching Time Test Circuit<br>VDS<br>90%<br>|<br>|<br>10%<br>VGS AY.OD A=<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 10b.** Switching Time Waveforms 

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10<br>eeee ee ll<br>1<br>A<br>D  = 0.50<br>Sash 0 .20 eat Se eet et eet<br>PD M<br>0 .10<br>0.1 T oe i oth t<br>0.05 1<br>t 2<br>0 .02<br>Notes:<br>= 0.01 adSt       S IN G LE  P U LS E ea eee 1. D uty factor D  =  t   / t 1 2<br>(TH E R M A L R E S P O N S E )<br>0.01 AT uw ull CO Co 2. Peak T   = P       x Z          + T                                   J D M th JC C                            A<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , Re ctan gular Pulse Du ration (sec)1<br>thJC<br>Therm al R esponse (Z       )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

## IRL2910S/LPbF 

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**----- Start of picture text -----**<br>
1 5V<br>V DS L DRIVER<br>R G D.U.T +<br>- [V][D D]<br>IA S<br>20V ri<br>Bose tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V (BR)DSS<br>~— tp -—><br>/<br>/ |\<br>/ \<br>/ |<br>/<br>y \<br>I AS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
— QG<br>5.0 V<br>ay QGS oe QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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1400<br>                    I D<br>1200 P|Potft tyEt [tt] TOP            12A                   20A<br>Naan BO TTO M     29A<br>INE<br>1000 ENB<br>PN<br>800 PT IN, EL EE Et<br>600 BNE VEE<br>NEN Eee<br>400 aN PT ANONNESEEEeee<br>PoSERIA<br>200 Pt | BS A<br>0 ee  V      = 25VDD ee ee ee<br>25 50 75 100 125 150 175<br>Starting T  , Junction Tem perature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (m J)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T. |<br>50K Ω |<br>12V .2 µ F<br>.3 µ F<br>LE ty || +<br>D.U.T. -VDS<br>VGS<br>3mA<br>OF<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

## IRL2910S/LPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •   Low Stray Inductance<br> •   Ground Plane<br> •   Low Leakage Inductance<br>|(a)| -       Current Transformer<br>+<br>- - +<br>a<br>00)<br>RG •   dv/dt controlled by RG +<br>( o l •   Driver same type as D.U.T. - VDD<br>•   ISD controlled by Duty Factor "D"<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


**==> picture [283 x 242] intentionally omitted <==**

**----- Start of picture text -----**<br>
Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>-—— + _<br>t<br>VGS=10V *<br>t<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt J<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>Fig 14.  For N-Channel HEXFETS<br>**----- End of picture text -----**<br>


## IRL2910S/LPbF D[2] Pak Package Outline Dimensions are shown in millimeters (inches) 

## D[2] Pak Part Marking Information (Lead-Free) 

**==> picture [272 x 54] intentionally omitted <==**

**----- Start of picture text -----**<br>
T HIS  IS  AN IR F 530S  WIT H PAR T  NU MB E R<br>L OT  CODE  8024 INT E R NAT IONAL cS<br>AS S E MB L E D ON WW 02, 2000 R E CT IF IE R F 530S<br>IN T H E  AS S E MB L Y L INE  "L " L OGO IeaR 002L<br>Note: "P" in as s embly linepos ition indicates  "L ead-F ree" AS S E MB L YL OT  CODE 80LU7Ul 7Ul24 DAT E  CODEYE AR  0 =WE E K  02L INE  L  2000<br>**----- End of picture text -----**<br>


## OR 

**==> picture [186 x 59] intentionally omitted <==**

**----- Start of picture text -----**<br>
PAR T  NU MBE R<br>INT E R NAT IONAL oS<br>R E CT IF IE R F 530S<br>L OGO TER80 PO02A24 DAT E  CODE<br>P =  DE S IGNAT E S  L E AD-F RE E<br>AS S E MBL YL OT  CODE Ju Taybo YE AR  0 =PR ODU CT  (OPT IONAL ) 2000<br>WE E K 02<br>A =  AS S EMB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


## IRL2910S/LPbF 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

**==> picture [307 x 64] intentionally omitted <==**

**----- Start of picture text -----**<br>
E XAMPLE : T HIS  IS  AN IRL 3103L<br>LOT  CODE  1789 PAR T  NU MB E R<br>AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL oS<br>IN T HE  AS S E MB LY LINE  "C" RE CT IF IE RLOGO TEARIRL3103L719C<br>Note: "P" in as s embly line 17 89 DAT E  CODE<br>pos ition indicates  "Lead-F ree" AS S E MB LY YE AR  7 =  1997<br>LOT  CODE WE E K 19<br>LINE  C<br>**----- End of picture text -----**<br>


## OR 

**==> picture [209 x 65] intentionally omitted <==**

**----- Start of picture text -----**<br>
PAR T  NU MB E R<br>INT E R NAT IONAL —S<br>RE CT IF IE R IRL3103L<br>LOGO TeaARP 719A DAT E  CODE<br>17 89<br>P =  DE S IGNAT E S  LE AD-F RE E<br>AS S E MB LY PR ODU CT  (OPT IONAL)<br>LOT  CODE YE AR  7 =  1997<br>WE E K 19<br>A =  AS S E MB LY S IT E  CODE<br>**----- End of picture text -----**<br>


## IRL2910S/LPbF 

## D[2] Pak Tape & Reel Information 

Dimensions are shown in millimeters (inches) 

**==> picture [327 x 347] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1 .60  (.0 6 3)<br>1 .50  (.0 5 9)<br>1.60  (.06 3)<br>4.10  (.16 1)3.90  (.15 3) 1.50  (.05 9) 0.3 68 (.014 5)<br>Tal a) 0.3 42 (.013 5)<br>ZN _ 4 TT<br>FE ED DIRE CTIO N 1.8 5 (.0 73 ) 1 11 .60 (.457)<br>1.6 5 (.0 65 ) OG OO7 11 .40 (.449) 15.42 (.609) -_ 24.30 (.957 ) |<br>23.90 (.941 )<br>15.22 (.601)<br>TRL<br>LSS Tl<br>10.90 (.429) - | 1.75 (.069)1.25 (.049)<br>10.70 (.421) 4.72 (.1 36)<br>16 .10  (.634) 4.52 (.1 78)<br>15 .90  (.626)<br>FE ED DIRE CTIO N<br>13.50 (.532) 27.40 (1.079)<br>® 12.80 (.504) 23.90 (.941) AP<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN .<br>  M AX .<br>| OO |<br>30.40 (1.197)<br>N O TES : oo Ji       M AX .<br>1.   C O MF O R MS  TO  EIA-418.2.   C O N TR O LLIN G  D IM EN SIO N : M ILLIMET ER . 26.40 (1.039)24.40 (.961) IL 4<br>3.   D IM EN SIO N  ME ASU R ED  @  H U B.<br>3<br>**----- End of picture text -----**<br>


4.   INC LU D ES FLAN G E D IST O R TIO N @  O U TER  ED G E. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL2910STRLPBF/power-mosfet-n-channel-100-v-55-a-0026-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl2910strlpbf/mosfet-n-ch-100v-55a-to-263-3/dp/2803425)
---

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