# Power MOSFET, N Channel, 30 V, 100 A, 0.007 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8650896/)

**URL**: https://novapart.co/products/IRL2203NPBF/power-mosfet-n-channel-30-v-100-a-0007-ohm-to
**SKU**: IRL2203NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7930
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 130W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 130W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.007ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 100A |
| Drain Source On State Resistance | 0.007ohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650896/)

PD - 94953 

## IRL2203NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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**----- Start of picture text -----**<br>
D<br>VDSS = 30V<br>R  = 7.0mΩ<br>DS(on)<br>G<br>ID = 116A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


|—<br>———<br>~~————————~~|**Parameter**<br>—FOOOT<br>~~————————~~|**Max.**<br>ooo]<br>-<br>—<br>~~i~~|**Units**<br>—<br>~~i~~|
|---|---|---|---|
|ID@ TC= 25°C<br>—<br>———<br>~~————————~~|Continuous Drain Current, VGS@ 10V<br>— FOO OT <br>~~————————~~|116<br> ooo]<br>-<br>—<br>~~i~~|A<br>—<br>~~i~~<br>a|
|ID@ TC= 100°C<br>~~————————~~|Continuous Drain Current, VGS@ 10V<br>~~————————~~|82<br>~~i~~||
|IDM<br>~~————————~~<br>a|Pulsed Drain Current<br>~~————————~~<br>a|400<br>~~i~~<br>a||
|PD@TC= 25°C<br>~~————————~~<br>~~a~~|Power Dissipation<br>~~————————~~<br>~~a~~|180<br>~~i~~<br>~~a~~|W<br>~~i~~<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|1.2<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 16<br>~~a~~|V<br>~~a~~|
|IAR<br>~~**a**~~|Avalanche Current<br>~~**a**~~|60<br>~~**a**~~|A<br>~~**a**~~|
|EAR<br>~~**a**~~|Repetitive Avalanche Energy<br>~~**a**~~|18<br>~~**a**~~|mJ<br>~~**a**~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175|°C|
|~~pf~~|SolderingTemperature, for 10 seconds<br>~~pf~~|300(1.6mm from case)||
|~~a~~|Mounting torque, 6-32 or M3 srew<br>~~a~~|10 lbf•in (1.1N•m)<br>~~a~~|~~a~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.85|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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|es<br>~~oe~~|**Parameter**<br>es<br>~~oe~~|**Min. **<br>es<br>~~oe~~|**Typ. **<br>es<br>~~oe~~|**Max.**<br>es<br>~~oe~~|**Units**<br>es<br>~~oe~~|**Conditions**<br>~~:~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~po~~<br>~~oe~~|Drain-to-Source Breakdown Voltage<br>~~po~~<br>~~oe~~|30<br>~~po~~<br>~~oe~~|–––<br>~~po~~<br>~~oe~~|–––<br>~~po~~<br>~~oe~~|V<br>~~po~~<br>~~oe~~|VGS= 0V, ID= 250µA<br>~~:~~|
|∆V(BR)DSS/∆TJ<br>~~ee~~<br>~~oe~~|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~oe~~|–––<br>~~ee~~<br>~~oe~~|0.029<br>~~ee~~<br>~~oe~~|–––<br>~~ee~~<br>~~oe~~|V/°C<br>~~ee~~<br>~~oe~~|Reference to 25°C, ID= 1mA<br>~~:~~|
|RDS(on)<br>~~oe~~|Static Drain-to-Source On-Resistance<br>~~oe~~<br>~~|~~|–––<br>~~oe~~<br>~~|~~<br>~~|~~|–––<br>~~oe~~|7.0<br>~~oe~~|mΩ<br>~~oe~~|VGS= 10V, ID= 60A<br>~~:~~<br>~~@~~|
|||–––<br>~~oe~~<br>~~|~~<br>~~|~~|–––<br>~~oe~~|10<br>~~oe~~||VGS= 4.5V, ID= 48A<br>~~:~~<br>~~@~~|
|VGS(th)<br>~~oe~~<br>~~ee~~|Gate Threshold Voltage<br>~~oe~~<br>~~|~~<br>~~ee~~|1.0<br>~~oe~~<br>~~|~~<br>~~|~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~|V<br>~~oe~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~:~~<br>~~@~~|
|gfs<br>~~oe~~<br>~~a~~|Forward Transconductance<br>~~oe~~<br>~~a~~|73<br>~~oe~~<br>~~a~~|–––<br>~~oe~~<br>~~a~~|–––<br>~~oe~~<br>~~a~~|S<br>~~oe~~<br>~~a~~|VDS= 25V, ID= 60A<br>~~:~~<br>~~a®~~|
|IDSS<br>~~oe~~<br>~~i~~|Drain-to-Source Leakage Current<br>~~oe~~<br>~~i~~<br>~~|~~|–––<br>~~oe~~<br>~~i~~<br>~~||~~|–––<br>~~oe~~<br>~~i~~|25<br>~~oe~~<br>~~i~~|µA<br>~~oe~~<br>~~i~~|VDS= 30V, VGS= 0V<br>~~:~~<br>~~i~~|
|||–––<br>~~oe~~<br>~~i~~<br>~~||~~|–––<br>~~oe~~<br>~~i~~|250<br>~~oe~~<br>~~i~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~:~~<br>~~i~~|
|~~oe~~<br>loss ~~ee~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~oe~~<br>~~|~~<br>~~ee~~|–––<br>~~oe~~<br>~~| |~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~|100<br>~~oe~~|nA<br>~~oe~~|VGS= 16V<br>~~:~~|
||Gate-to-Source Reverse Leakage<br>~~oe~~<br>~~ee~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~<br>~~ee~~|–––<br>~~oe~~<br>~~ee~~<br>~~ee~~|-100<br>~~oe~~<br>~~ee~~||VGS= -16V<br>~~:~~|
|Qg<br>~~oe~~<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~oe~~<br>~~ee~~<br>~~a~~|–––<br>~~oe~~<br>~~ee~~<br>~~a~~|–––<br>~~oe~~<br>~~ee~~<br>~~a~~|60<br>~~oe~~<br>~~ee~~<br>~~a~~|nC<br>~~oe~~<br>~~a~~|ID= 60A<br>VDS= 24V<br>VGS= 4.5V, See Fig. 6 and 13<br>~~:~~|
|Qgs<br>~~a~~|Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|14<br>~~a~~|||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|33<br>~~a~~|||
|td(on)<br>~~a~~<br>a|Turn-On Delay Time<br>~~a~~|–––<br>~~a~~|11<br>~~a~~|–––<br>~~a~~|~~a~~-|VDD= 15V<br>ID= 60A<br>RG= 1.8Ω<br>VGS= 4.5V, See Fig. 10<br>@|
|tr<br><br>a|Rise Time<br>|–––<br>|160<br>|–––<br>|||
|td(off)<br><br>a<br>a<br>~~ee~~|Turn-Off Delay Time<br><br>~~ee~~|–––<br><br>~~ee~~|23<br><br>~~ee~~|–––<br><br>~~ee~~|||
|tf<br><br>a<br>~~ee~~|Fall Time<br><br>~~ee~~|–––<br><br>~~ee~~|66<br><br>~~ee~~|–––<br><br>~~ee~~|||
|LD<br>~~ee~~<br>~~FF"~~<br>~~es~~|Internal Drain Inductance<br>~~ee~~<br>~~FF"~~<br>|–––<br>~~ee~~<br>~~FF"~~|4.5<br>~~ee~~<br>~~FF"~~|–––<br>~~ee~~<br>~~FF"~~|~~FF"~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>@<br>~~@~~|
|LS<br>~~ee~~<br>~~FF"~~<br>~~es———~~<br>a|Internal Source Inductance<br>~~ee ~~<br>~~FF"~~<br>~~———~~<br>|–––<br> ~~ee~~<br>~~FF"~~<br>oo<br>|7.5<br>~~ee~~<br>~~FF"~~<br>oo<br>|–––<br>~~ee~~<br>~~FF"~~|||
|Ciss<br>~~FF"~~<br>~~es———~~<br>a|Input Capacitance<br>~~FF"~~<br>~~———~~<br>|–––<br>~~FF"~~<br>oo<br>|3290<br>~~FF"~~<br>oo<br>|–––<br>~~FF"~~|pF<br>~~FF"~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~@~~|
|Coss<br>~~FF"~~<br>~~es———~~<br>aa|Output Capacitance<br>~~FF"~~<br>~~———~~<br>es|–––<br>~~FF"~~<br>oo<br>ee|1270<br>~~FF"~~<br>oo<br>ee|–––<br>~~FF"~~|||
|Crss<br>~~———~~<br>aa|Reverse Transfer Capacitance<br>~~———~~<br>es|–––<br>oo<br>ee|170<br>oo<br>ee|–––|||
|EAS<br>~~———~~<br>aa|Single Pulse Avalanche Energy<br>~~———~~<br> es|––– 1320<br>oo<br> ee|1320<br>oo<br> ee|290|mJ<br>IAS= 60A, L = 0.16mH||



® Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

Starting TJ = 25°C, L = 0.16mH 

RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12) 

©) ISD ≤ 60A , di/d +t ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

©) This is a typical value at device destruction and represents operation outside rated limits. 

This is a calculated value limited to TJ = 175°C . 

@ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 

www.irf.com 

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**----- Start of picture text -----**<br>
 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>4.5V 4.5V<br>3.7V 3.7V<br>3.5V HLA 3.5V 1 ae<br>3.3V 3.3V<br>3.0V 3.0V<br>BOTTOM 2.7V Tt tH BOTTOM 2.7V Hee<br> 100  100<br>0/7, 200 ge<br>poe TT \ fp 2.7V<br> 10 2.7V  10<br> 1 SLE IT LL 20µs PULSE WIDTHT  = 25J °C  1 T E HI 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 ————————— 2.5 ID = 100A<br>T  = 25  CJ ° 2.0<br>PoE ee<br>T  = 175  CJ °<br>1.5<br> 100 TAP CCPC eer<br>t+— Ao + —_ ff —_ — | —_ + +} HJ AEE—<br>es ee PY / ee ee ee ee ee eee 1.0 =<br>HARES ERE<br>0.5<br>V      = 15VDS<br> 10 Sa“ Ltpp 20µs PULSE WIDTH 0.0 FCPEP CCE VGS = 10V<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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**----- Start of picture text -----**<br>
6000 15<br>VGS = 0V, f = 1MHz ID = 60A<br>TT] Ciss = Cgs + Cgd , C      SHORTEDds Po, ft | tt tt<br>5000 CCrssoss == CCgdds + Cgd 12 VVDSDS == 24V 15V<br>po —— - - ——<br>4000<br>Sm tS<br>Ciss 9<br>PN ETH A<br>3000 IN) SSTT PE EL LL Aw<br>ANE 6 TT TT<br>—— LCT<br>2000 Coss<br>FP +p TT | TCO TT<br>Ay SET TTA<br>3<br>1000<br>SIP ST _ 1<br>0 PILT, T Crss STEH 0 VYf|oie| | | FOR TEST CIRCUITSEE FIGURE        to 13<br> 1  10  100 0 20 40 60 80<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000<br>10000<br>OPERATION IN THIS AREA<br> 100 LIMITED BY R DS(on)<br>°<br>Beene? T  = 175  CJ 46008 ee oc<br>1000<br>2. 2======— A|<br> 10<br>Sere eeeeeeee aoa ees ee<br>100<br>== ae = pe e  eT) 100µsec<br>T  = 25  CJ °<br> 1<br>Hi if, | | | | PP ysdiPtssb ee 1msec<br>P op pe 10 S el im<br>|PP V      = 0 V GS = Tc = 25°C ==... 10msec ane<br>0.1 Tj = 175°C<br>pO S E ES<br>0.0 V     ,Source-to-Drain Voltage (V)0.4SD 0.8 1.2 1.6 2.0 2.4 1 ee Single Pulse ee lll<br>1 10 100<br>VDS  , Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Fig 8.   Maximum Safe Operating Area<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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120<br>LIMITED BY PACKAGE<br>pan TT Von Re<br>100 | oO 7<br>80 pttitssJ tt tt tT | D.UT. -<br>PES a t vs<br>60 SS Seee Nee Vos ≤ 1<br>≤ 0.1 %<br>Pit} tt tt TNE TT buy Factor<br>40<br>N Fig 10a. Switching Time Test Circuit<br>20 FECES VDS |<br>Cee 90% fi<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>Pitt tT TT tt | 10% \ OV<br>/ \<br>Fig 9.   Maximum Drain Current Vs. VGS l \<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 1 ee<br>es es oc eee<br>D = 0.50 a OO | ——<br>a eee engi eet | ee eeenT|<br>e a e_ ee  eeeeeeeee<br>0.20 ctl<br>=, eee eee<br>0.10<br>0.1<br>eeFfca lS ee ee  ee ee ee<br>ES 0.05 ee e ee e ee nees PDM<br>SINGLE PULSE<br>0.02 (THERMAL RESPONSE) t1<br>0.01 cr enna<br>t2<br>a e RO eee eel<br>Notes:<br>1. Duty factor D = t   / t1 2<br>co n 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 Co 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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600<br>ID<br>Gana<br>TOP 24A<br>500 NERS 42A<br>BOTTOM 60A<br>PX ET TT<br>P NT<br>400 tT tt<br>GENEEE EeeEE Eee Eee<br>300<br>NIA<br>KNOX<br>PINAIACPy<br>200 Py PT RAKINC TT TT TT<br>100<br>potpfUSERR...USUSA USA<br>pfUSERR...USUSA<br>ERR...USUSA<br>0 ~S<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJJ (  C)°°<br>Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V D<br>TOP 24A<br>500 NERS 42A<br>VDS L DRIVER PX ET TT BOTTOM 60A<br>P NT<br>400 tT tt<br>RG D.U.T +<br>- [V][DD] GENEEE EeeEE Eee Eee<br>IAS A<br>aii 20VVGS 300 NIA<br>tp 0.01Ω<br>“ly KNOX<br>12a. Unclamped Inductive| Test Circuit_ 200 PINAIACPy PT RAKINC TT TT TT<br>— tp V(BR)DSS 100 potpfUSERR...USUSA<br>0 ~S<br>25 50 75 100 125 150 175<br>/ Starting T  , Junction TemperatureJJ (  C)°°<br>/ y |\ Fig 12c. MaximumVs. MaximumVs.Vs. Drain AvalaCurre AvalaCurreCurre n tche Energyche Energy Energy<br>IAS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF !<br>QG .3µF<br>BE | +<br>CT | J \ D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>Oe.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

www.irf.com 

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## Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>ay, 4 6.47 (.255)6.10 (.240)<br>15.24 (.600) | an CI it<br>14.84 (.584) LEAD ASSIGNMENTS<br>1.15 (.045) LEAD ASSIGNMENTS<br>     MIN HEXFET       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| darx 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X aii [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M 2.92 (.115)<br>2.64 (.104)<br>___} 2.54 (.100) || T<br>2X<br>NOTES:<br>**----- End of picture text -----**<br>


1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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