# Power MOSFET, N Channel, 40 V, 120 A, 3100 µohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2781148/)

**URL**: https://novapart.co/products/IRL1404ZSTRLPBF/power-mosfet-n-channel-40-v-120-a-3100-ohm-to
**SKU**: IRL1404ZSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7400
**Stock**: 25+
**Lead Time**: 141 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 120A |
| Drain Source On State Resistance | 3100µohm |
| Gate Source Threshold Voltage Max | 2.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781148/)

PD - 95446B 

## IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF 

## **Features** 

Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## HEXFET[®] Power MOSFET 

|VDSS= 40V<br>D<br>Ultra Low On-Resistance<br>175°C Operating Temperature|
|---|
|Fast Switching|
|RDS(on)= 3.1mΩ<br>G<br>Repetitive Avalanche Allowed up to Tjmax<br>Lead-Free|
|ID= 120A|
|**Description**<br>This HEXFET®Power MOSFET utilizes the latest<br>S|
|processing techniques to achieve extremely low|
|on-resistance per silicon area. Additional features|
|of this design are a 175°C junction operating<br>temperature, fast switching speed and improved<br>repetitive avalanche rating. These features combine<br>to make this design an extremely efficient and<br>reliable device for use in a wide variety of<br>:SY $.<br>NS|
|applications.<br>D2Pak<br>TO-220AB<br>TO-262|
|IRL1404ZSPbF<br>IRL1404ZPbF<br>IRL1404ZLPbF|
|**Absolute Maximum Ratings**|
|**Parameter**<br>**Units**<br>**Max.**|
|ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>200|
|ID@ TC= 100°C<br>Continuous Drain Current,VGS@ 10V<br>A<br>140<br>~~eS~~|
|ID@ TC= 25°C<br>Continuous Drain Current,VGS@ 10V(Package Limited)<br>120<br>~~a~~|
|IDM<br>Pulsed Drain Current<br>790<br>~~a~~|
|PD@TC= 25°C<br>Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>230<br>1.5<br>± 16<br>~~a~~<br>~~opo_TN7)2)—>~—~~<br>~~ees~~|
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>mJ<br>EAS(Tested)<br>Single Pulse Avalanche EnergyTested Value<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>TJ<br>Operating Junction and<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds<br>MountingTorque,6-32 or M3 screw<br>-55  to + 175<br>300 (1.6mm from case )<br>10 lbf in (1.1N m)<br>490<br>220<br>See Fig.12a, 12b, 15, 16<br>~~es~~<br>~~a~~<br>~~——~~<br>~~afe~~<br>~~a~~|
|**Thermal Resistance**|
|**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>0.65<br>°C/W<br>RθCS<br>Case-to-Sink,Flat,Greased Surface<br>0.50<br>–––<br>RθJA<br>Junction-to-Ambient<br>–––<br>62<br>RθJA<br>Junction-to-Ambient(PCB Mount)<br>–––<br>40<br>~~———_ IOO,_[.Z—————1T_~~<br>~~a~~<br>~~a~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~<br>~~(QO~~|**Parameter**<br>~~QO~~<br>~~(QO~~|**Min.**<br>~~QO~~<br>~~(QO~~|**Typ.**<br>~~QO~~<br>~~(QO~~|**Max.**<br>~~QO~~<br>~~(QO~~|**Units**<br>~~QO~~<br>~~(QO (~~|**Conditions**<br>~~QO~~<br>~~(~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ee~~<br>~~(QO~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~QO~~<br>~~(QO~~<br>~~ND~~<br>~~|~~|40<br>~~QO~~<br>~~(QO~~<br>~~ND~~<br>~~|~~|**Typ.**<br>–––<br>~~QO~~<br>~~(QO~~<br>~~ND~~<br>|–––<br>~~QO~~<br>~~(QO~~<br>~~ND~~<br>~~(QO~~<br>|V<br>~~QO~~<br>~~(QO (~~<br>~~ND~~<br>~~(QO~~|VGS= 0V,ID= 250μA<br>~~QO~~<br>~~(~~<br>~~ND~~<br>~~QO~~|
|(BR)DSS<br>ΔV(BR)DSS/ΔTJ<br>~~(QO~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~(QO~~<br>~~ND~~<br>~~|~~|–––<br>~~(QO~~<br>~~ND~~<br>~~|~~|0.034<br>~~(QO~~<br>~~ND~~<br>|–––<br>~~(QO~~<br>~~ND~~<br>~~(QO~~<br>|V/°C<br>~~(QO (~~<br>~~ND~~<br>~~(QO~~|Reference to 25°C,ID= 1mA<br>~~(~~<br>~~ND~~<br>~~QO~~|
|(BR)DSS<br>RDS(on)<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~ND~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~Se~~|–––<br>~~ND~~<br>~~|[|~~<br>~~|~~<br>~~|~~|2.5<br>~~ND~~<br>~~[|~~<br>~~fT~~|3.1<br>~~ND~~<br>~~(QO~~<br>~~[|~~<br>~~fT~~|mΩ<br>~~ND~~<br>~~(QO ~~<br>~~(QO~~|VGS= 10V,ID= 75A<br>~~ND~~<br>~~QO~~|
|||–––<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|–––<br><br>~~fT~~|4.7<br>~~(QO~~<br><br>~~fT~~||VGS= 5.0V,ID= 40A<br> ~~QO~~|
|||–––<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|–––<br>~~fT~~<br>~~(QO~~|5.9<br>~~fT~~<br>~~(QO~~||VGS= 4.5V,ID= 40A<br>~~QO~~|
|VGS(th)<br>~~es~~|Gate Threshold Voltage<br>~~|~~<br>~~Se~~|1.4<br>~~|~~<br>~~|~~|–––<br>~~(QO~~|2.7<br>~~(QO~~|V<br>~~(QO~~|VDS= VGS,ID= 250μA<br>~~QO~~|
|GS(th)<br>gfs<br>~~es~~<br>~~ee~~<br>~~;~~|Forward Transconductance<br>~~|~~<br>~~Se~~<br>~~|~~<br>~~ees~~<br>~~;~~|120<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ees~~<br>|–––<br>~~(QO~~<br>~~ees~~<br>|–––<br>~~(QO~~<br>~~eee~~<br>|S<br>~~(QO~~<br>~~ee~~<br>|VDS= 10V,ID= 75A<br>~~QO~~<br>|
|IDSS<br>~~ee~~<br>~~;~~|Drain-to-Source Leakage Current<br>~~|~~<br>~~ees~~<br>~~;~~|–––<br>~~|~~<br>~~|~~<br>~~ees~~<br>|–––<br>~~ees~~<br>|20<br>~~eee~~<br>|μA<br>~~ee~~<br>|VDS= 40V,VGS= 0V,TJ= 125°C<br>VDS= 40V, VGS= 0V<br>|
|||–––<br>~~|~~<br>~~|~~<br>~~ees~~<br>|–––<br>~~ees~~<br>|250<br>~~eee~~<br>|||
|IGSS<br>~~ee~~<br>~~;~~<br>~~es~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~ees~~<br>~~; ———~~|–––<br>~~|~~<br>~~|~~<br>~~ees~~<br>~~———~~|–––<br>~~ees~~<br>~~———~~|200<br>~~eee~~<br>~~———~~|nA<br>~~ee~~<br>~~|~~|VGS= 16V<br>VGS= -16V<br>~~|~~|
||Gate-to-Source Reverse Leakage<br>~~ees~~<br>~~; ———~~|–––<br>~~ees~~<br>~~———~~|–––<br>~~ees~~<br>~~———~~|-200<br>~~eee~~<br>~~———~~|||
|Qg<br>~~;~~<br>~~es~~<br>~~es~~|Total Gate Charge<br>~~ees~~<br>~~; ———~~|–––<br>~~ees~~<br>~~———~~|75<br>~~ees ~~<br>~~———~~|110<br> ~~eee ~~<br>~~———~~|nC<br> ~~ee~~<br> ~~|~~|VDS= 32V<br>ID= 75A<br>VGS= 5.0V<br>~~|~~<br>@<br>~~8~~|
|g<br>Qgs<br><br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Source Charge<br>~~———~~|–––<br>~~———~~|28<br>~~———~~|–––<br>~~——— ~~|||
|gs<br>Qgd<br>~~es~~<br>~~es~~<br>~~es~~|Gate-to-Drain("Miller")Charge|–––|40|–––|||
|gd<br>td(on)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-On DelayTime|–––|19|–––|ns|VGS= 5.0V<br>VDD= 20V<br>ID= 75A<br>RG= 4.0Ω<br>~~8~~<br>@<br>~~8~~<br>~~@~~|
|d(on)<br>tr<br>~~es~~<br>~~es~~<br>~~es~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|180<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|30<br>~~ee~~|–––<br>~~ee~~|||
|d(off)<br>tf<br>~~es~~<br>~~es~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~|49<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|||
|LD<br>~~es~~<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––<br>~~eee~~|4.5<br>~~eee~~|–––<br>~~eee~~|nH|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~8~~<br>~~@~~|
|LS<br>~~ee ~~<br>~~ee~~<br>~~es~~|Internal Source Inductance<br> ~~ee ~~<br>~~ee~~|–––<br> ~~eee~~<br>~~ee~~<br>~~ee~~|7.5<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|||
|Ciss<br>~~ee~~<br>~~es~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|5080<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~Po~~|
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|970<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~es~~<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|570<br>~~ee~~|–––<br>~~ee~~|||
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance|–––|3310|–––||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>~~Po~~<br>~~ee~~|
|Coss<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance|–––|870|–––||VGS= 0V,VDS= 32V, ƒ= 1.0MHz<br>~~Po~~<br>~~ee~~|
|Cosseff.<br>~~es~~<br>~~es~~|Effective Output Capacitance|–––|1280|–––||VGS= 0V,VDS= 0V to 32V<br>~~ee~~|



Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, 

L = 0.079mH, RG = 25 Ω , IAS = 75A, VGS =10V. Part not recommended for use above this value. 

Pulse width ≤ 1.0ms; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

This value determined from sample failure population. 100% tested to this value in production. 

This is only applied to TO-220AB package. 

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

Calculated continuous current based on maximum allowable 

junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

All AC and DC test condition based on former Package limited current of 75A. 

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1000 1000<br>VGS VGS<br>TOP           10V TOP           10V<br>a eee 7.0V aeee 7.0V<br>5.0V 5.0V<br>Ee) eee 4.5V ee 4.5V<br>4.0V 4.0V<br>100 nny Zaman BOTTOM 3.5V 3.3V3.0V 100 ggll BOTTOM 3.5V3.3V3.0V<br>P= arr ee | Zoe<br>3.0V<br>F201 ee |<br>10 eeeCm Ci) = 10 YoZT Tr<br>SC 3.0V a ee ee eee<br>60μs PULSE WIDTH 60μs PULSE WIDTH<br>1 PUnt Tj = 25°C | 1 Bimait Tj = 175°C |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 200<br>a ee ee TJ = 175°C il T J  = 25°C<br>TBF 150 Fl pe<br>100<br>| gi | | | | | FP | 47 |<br>ee 2 ee ee ee ee ee ee ee<br>|eeVy | | | ef J f{ f ' 100 | | J | T = 175°C —<br>10 Pa EF J<br>T = 25°C<br>J<br>50<br>ee es es es es es<br>V DS  = 10V<br>oe Ftd I VDS = 10V<br>60μs PULSE WIDTH<br>|<br>1.0 PP 0 f<br>2 3 4 5 6 7 8 9 10 0 50 100 150 200<br>ID,Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>= Ciss   = C gs + Cgd,  C ds SHORTED<br>i C rss    = C gd<br>FA Coss  = Cds + Cgd<br>10000 rt<br>Ciss<br>aaa eeel<br>1000 a nel C oss il<br>Crss<br>a el<br>ee ee<br>100<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000.00<br>T J  = 175°C 7<br>100.00<br>es ey Ae ee<br>fF—— fh<br>10.00<br>T = 25°C<br>J<br>VGS = 0V<br>1.00 reee ee<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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6.0<br>ID= 75A<br>VDS= 32V<br>5.0<br>VDS= 20V<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>0 20 40 60 80<br> QG  Total Gate Charge (nC)<br>Fig 6.   Typical Gate Charge vs.<br>Gate-to-Source Voltage<br>10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000 Se ee ee eeesn<br>PAT TP UT Tg TT<br>100 SREPRAMS.eeCETTEa eee TTTll<br>100μsec<br>10 1msec<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse 10msec<br>1 eeenha Seellee<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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200<br>LIMITED BY PACKAGE 2.0<br>ID = 75A<br>160<br>tg jj V GS  = 10V PLT ELLY<br>120 ake YY<br>80 PP TENIs : 1.5 TWATY |<br>40 \ \ 1.0 EETLLLyy ELL.<br>0<br>25 50 75 100 125 150 175<br>aE EEE<br>0.5<br> TC , Case Temperature (°C) -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>1<br>D = 0.50<br>0.20<br>0.1 = oer<br>0.10 Sr tt<br>0.05<br>= 0.02 Se HH R 1 R1 R 2 R2 R 3R3 | Ri (°C/W)  τ i (sec)<br>0.01 ed 0.01 τ J τ cowpea J τ C τ | 0.185<br>SINGLE PULSE τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.241<br>( THERMAL RESPONSE ) Ci= Ci τ i / Rii / Ri 0.227<br>0.001<br>Notes:<br>en ee ee eee el ee 1. Duty Factor D = t1/t2 |<br>0.0001 Ft Tete ET ETE S| EE SE ETT 2. Peak Tj = P dm x Zthjc + Tc |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>W - [V][DD]<br>IAS<br>2V0VGS<br>ed s tp 0.01 * Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>“4 tp<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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900<br>ID<br>800<br>700 NtEt TOP         16A 26A<br>BOTTOM 75A<br>ENEREEE<br>600 BRU<br>500<br>400 NINEE EEE<br>BNEKGEEEEEEE<br>300<br>200 SESS<br>100<br>ine! SNUREEE<br>Pi | | | | SA<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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w y QG<br>QGS QGD<br>3.0<br>VG<br>2.5<br>ETT TTT<br>Charge<br>2.0<br>Fig 13a.   Basic Gate Charge Waveform = PSE ID = 250μA<br>Current Regulator 1.5<br>Same Type as D.U.T.<br>50K Ω 1.0<br>12V .2 μ F<br>.3 μ F<br>+<br>the D.U.T. -VDS 0.5 NETLLL<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>VGS<br>— 3mA & | LLL TJ , Temperature ( °C )<br>o nal TEL EN<br>IG ID<br>Current Sampling Resistors<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>PTeeEEee eee eT<br>Allowed avalanche Current vs<br>Duty Cycle = Single Pulse<br>100 avalanche  pulsewidth,  tav<br>assuming  Δ Tj = 25°C due to<br>0.01 avalanche losses<br>SMT<br>PUSSIES PSs<br>0.05 PSS<br>0.10<br>10 pII TT<br>ee eee ee eee eesti<br>ee ee eel<br>ee ce<br>1<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>250 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>|| TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>| |<br>Na BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>200 ID = 75A   Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>150 PINN EEE 2. Safe operation in Avalanche is allowed as long asT  not exceeded. jmax is<br>3. Equation below based on circuit and waveforms shown in<br>SENSE<br>  Figures 12a, 12b.<br>100 EEERNNEe eee 4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>HENS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>50 PLETE TAKE     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>Pitt 7.  Δ T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 15, 16).<br>0 Pit TEEETETNALUSS   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— D = —— Period<br>) [©)] Circuit    • Layout Considerations | V t t GS=10<br>| — - •  LowGroundStray Inductance Plane<br>+ CurrentowLeakageTransformerInductance @ D.U.T. ISD Waveform<br>Reverse<br>@ - a | = - ° + RecoveryCurrent r Body Diode ForwardCurrent di/dt /\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 we VDD<br>ma<br>•  Re-Applied<br>Re (A • •  vidtriversamecontrolledtype as by RgD.U.T. VD D +- Voltage Inductor Curent Body Diode  Forward Drop<br>•<br>D.U.T. - Device Under Test SCO |<br>sp controlled by Duty Factor "D" @ Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 17.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs 

**==> picture [16 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1 s<br> 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< r l. > ! Kop le<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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**==> picture [354 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>I RF 1010<br>IN THE ASSEMBLY LINE "C" LOGO TR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

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**==> picture [258 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL c S<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 002.<br>80 24 DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>assembly line position LOT CODE Yt b f WEEK 02<br>t es “Lead — F ree” L L LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TeaR P0024 ) DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY You<br>LOT CODE TU an,U YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [243 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO ——STOR IRL3103L719¢<br>17 89 DATE CODE<br>No te : "P”indicain t assemblyes “Lead line - F ree”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL YS<br>RECTIFIER IRL3103L<br>LOGO TOR 17 P71989 4 DATE CODE<br>ASSEMBLY P =  DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


**Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

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## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

**==> picture [311 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>= \ el 15.42 (.609) £4<br>15.22 (.601) 23.90 (.941)<br>TRL ih<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>® 12.80 (.504) 23.90 (.941) I 4 t<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| F<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.03924.40 (.961) IE ) 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


**==> picture [148 x 13] intentionally omitted <==**

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3.   DIMENSION MEASURED @ HUB.<br>fe} 4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/2012 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRL1404ZSTRLPBF/power-mosfet-n-channel-40-v-120-a-3100-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl1404zstrlpbf/mosfet-n-ch-40v-120a-to-263ab/dp/2781148)
---

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