# Power MOSFET, N Channel, 40 V, 160 A, 4000 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2839499/)

**URL**: https://novapart.co/products/IRL1404STRLPBF/power-mosfet-n-channel-40-v-160-a-4000-ohm-to-263
**SKU**: IRL1404STRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3000
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.004ohm; ; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839499/)

## PD - 95148 

## IRL1404SPbF 

- Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Seventh Generation HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low- 

## IRL1404LPbF HEXFET[®] Power MOSFET 

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D<br>VDSS = 40V<br>R  = 0.004 Ω<br>DS(on)<br>G<br>ID = 160A<br>S<br>**----- End of picture text -----**<br>


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D [2] Pak TO-262<br>IRL1404S IRL1404L<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~Se~~ ID @ TC = 25°C ~~a~~ Continuous Drain Current ~~ee~~ , VGS @ 10V ~~aEe~~ 160 ~~Ee~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 A ~~eea~~ IDM Pulsed Drain Current 640 ae ~~A~~ PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 W ~~III, od~~ Linear Derating Factor 1.3 W/°C ~~III, od a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ EAS Single Pulse Avalanche Energy 520 mJ ~~a~~ IAR Avalanche Current 95 A ~~a~~ EAR Repetitive Avalanche Energy 20 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~ph————~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case) **Thermal Resistance Parameter Typ. Max. Units** ee R θ JC Junction-to-Case ––– 0.75 R θ CS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W ~~es~~ ——<—<—<————— R θ JA Junction-to-Ambient (PCB Mounted) ee ––– 40 www.irf.com 1 

04/19/04 

## IRL1404S/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~<br>~~ee~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~<br>~~ee~~|**Typ. **<br>~~es~~|**Max. **<br>~~es~~<br>~~ee~~|**Units**<br>~~es~~<br>~~ee~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ee~~<br>~~ee~~<br>~~es ee~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~ee~~|40<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~<br>~~eee~~|V<br>~~es~~<br>~~ee~~<br>~~eee~~|VGS= 0V, ID= 250µA<br>~~eee~~<br>~~;~~|
|∆V(BR)DSS/∆TJ<br>RDS(on)<br>~~ee~~<br>~~es ee~~<br>~~ee~~|Breakdown Voltage Temp. Coefficient<br>Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>–––<br>~~ee~~<br>~~ee~~|0.038 <br>––– <br>~~ee~~|–––<br> 0.004<br>~~ee~~<br>~~eee~~|V/°C<br>Ω<br>~~ee~~<br>~~eee~~|Reference to 25°C,D= 1mA<br>VGS= 10V, ID= 95A<br>~~eee~~<br>~~;~~<br>~~@~~|
|~~es ee~~<br>~~ee~~|~~ee~~|~~ee~~|0.0059<br>~~ee ~~|0.0059<br> ~~eee~~|~~eee~~|VGS= 4.3V, ID= 40A<br>~~eee~~<br>~~;~~<br>~~@~~|
|VGS(th)<br>~~ee~~<br>~~a~~|Gate Threshold Voltage|1.0|–––|3.0|V|VDS= VGS, ID= 250µA<br>~~@~~|
|gfs<br>~~es~~|Forward Transconductance<br>~~ee~~|93<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~<br>~~eee~~|S<br>~~ee~~<br>~~eee~~|VDS= 25V, ID= 95A<br>~~eee~~|
|IDSS<br>~~es~~|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>–––<br>~~ee~~|–––<br>–––<br>~~ee~~|20<br>250<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|VDS= 40V, VGS= 0V<br>VDS= 32V, VGS= 0V, TJ= 150°C<br>~~eee~~|
|IGSS<br>~~es~~<br>a|Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>–––<br>~~ee~~|–––<br>–––<br>~~ee~~|200<br>-200<br>~~ee~~<br>~~eee~~|nA<br>~~ee~~<br>~~eee~~|VGS= 20V<br>VGS= -20V<br>~~eee~~|
|Qg<br>aRs|Total Gate Charge|–––|–––|140|nC<br>~~ee~~|ID= 95A<br>VDS= 32V<br>VGS= 5.0V, See Fig. 6<br>~~@~~|
|Qgs<br>aRs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|48<br>~~ee~~|||
|gs<br>Qgd<br>Rs<br>~~ee~~|Gate-to-Source Charge<br>Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|60<br>~~ee~~|||
|td(on)<br>~~ee~~<br>~~a~~|Turn-On Delay Time<br>~~ee~~<br>|–––<br>~~ee~~<br>|18<br>~~ee~~<br>|–––<br>~~ee~~<br>|ns<br>~~ee~~|VDD= 20V<br>ID= 95A<br>RG= 2.5ΩVGS= 4.5V<br>RD= 0.25Ω<br>~~@~~<br>~~;~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|270<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|td(off)<br>tf<br>~~a~~|Turn-Off Delay Time<br>Fall Time<br>~~ee~~|–––<br>–––<br>~~ee~~|38<br>130<br>~~ee~~|–––<br>–––<br>~~ee~~|||
|LD<br>~~a~~|Internal Drain Inductance<br>~~ee ~~|–––<br> ~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~;~~|
||||||nH||
|LS<br>~~es~~|Internal Source Inductance|–––|7.5|–––|||
|Ciss<br>~~es~~<br>ee|Input Capacitance|–––|6600|–––|pF<br> Qs|VGS= 0V<br>VDS= 25V<br>QO|
|Coss<br>~~es~~<br>ee<br>Ps|Output Capacitance<br>~~GO~~|–––<br>~~GO~~|1700<br>~~GO~~<br>QO|–––<br>~~GO~~<br>GO|||
|Crss<br>ee<br>Ps|Reverse Transfer Capacitance<br>~~GO~~|–––<br>~~GO~~|350<br>~~GO~~<br>QO|–––<br>~~GO~~<br>GO||ƒ = 1.0MHz, See Fig. 5<br>QO|
|Coss<br>Ps<br>GO<br>ee|Output Capacitance<br>~~GO~~<br>GO<br>ee|–––<br>~~GO~~<br>GO<br>ee<br>ee|6700<br>~~GO~~<br>QO<br>GO<br>ee|–––<br>~~GO~~<br>GO <br>GO<br>ee||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>QO|
|Coss<br>ee|Output Capacitance<br>ee|–––<br>ee<br>ee|1500<br>ee|–––<br>ee||VGS= 0V,  VDS= 32V,  ƒ = 1.0MHz<br>VGS= 0V, VDS= 0V to 32V|
|Cosseff.<br>ee|Effective Output Capacitance<br>ee|–––<br>ee<br>ee|1500<br>ee|–––<br>ee|||
|**Source-Drain Ratings and Characteristics**<br>~~eseees~~|||||||
|~~Ce~~|**Parameter**<br>es<br>~~a~~|**Min.**<br>es<br>~~es~~<br>~~a~~|**Typ. **<br>es<br>~~ee~~<br>~~a~~|**Max. **<br>es<br>~~es~~<br>~~a~~|**Units**<br>es<br>~~a~~|**Conditions**<br>~~(nt~~|
|IS<br>~~Ce~~|Continuous Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~es ~~<br>~~a~~|–––<br> ~~ee ~~<br>~~a~~|160<br> ~~es~~<br>~~a~~|A<br>~~a~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~(nt~~|
|ISM<br>~~Ce~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|640<br>~~a~~|||
|VSD<br>~~Ce~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.3<br>~~a~~|V<br>~~a~~|TJ= 25°C, IS= 95A, VGS= 0V<br>~~(nt~~<br>:|
|trr<br>~~Ce~~|Reverse Recovery Time<br>~~a~~<br>~~es~~|–––<br>~~a~~<br>~~es~~|63<br>~~a~~<br>~~es~~|94<br>~~a~~<br>~~es~~|ns<br>~~a~~<br>~~es~~|TJ= 25°C, IF= 95A<br>di/dt = 100A/µs<br>~~(nt~~<br>~~;~~|
|Qrr<br>~~Ce~~<br>~~Ne~~|Reverse RecoveryCharge<br>~~a~~<br>~~Ne~~|–––<br>~~a~~|170<br>~~a~~|250<br>~~a~~|nC<br>~~a~~||
|ton<br>~~Ne~~|Forward Turn-On Time<br>~~Ne~~<br>~~PT~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~;~~<br>~~PT~~|||||



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## IRL1404S/LPbF 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 0 | 6.0V DE a, Zo<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.3V rrr 4.3V | th BOTTOM 4.3V HI per 4.3V<br>D ee en , a<br> 100 ALA , (ee  100 aa!dailaaa |<br>’ / A el OM<br>JA ll DP Aer ee |<br> 10 r np 20µs PULSE WIDTHT  = 25J °C  10 Ai me 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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 1000<br>FEE T  = 25  CJ ° S)<br>a _ Aa<br>At<br>T  = 175  CJ °<br>YA |<br>Ze<br>VAT]Y || | |<br>V      = 15VDS<br>20µs PULSE WIDTH<br> 100<br>4.0 5.0 6.0 7.0 8.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.5<br>ID = 160A<br>2.0<br>— Tittttttniiininir<br>1.5<br>LEE<br>SEERA RERREA REED) 24000<br>1.0<br>HeLE E eT<br>T LE<br>TELE ELLE<br>0.5 ULE EEE ET<br>ET E TE VGS = 10V<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRL1404S/LPbF 

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20<br>IDD = 95A<br>Ps, VDSVDSDSDS = 32V= 20V 32V 20V eft ft<br>VDSDSDS = 20V 32V 20V<br>16<br>PEt =—5<br>Pt pan<br>12 PTPi TTTtT LAL<br>Pi tTTTTtT tT<br>8<br>tA<br>BaD 4eEeee<br>P| TAAL tT<br>4<br>PlAT IT TtfAEEyi fiiAEEyi fiiyi fii fii IT Tt Tt FOR TEST CIRCUITSEE FIGURE         i<br>0 fAEEyi fiiAEEyi fiiyi fii fii IT Tt Tt SEE FIGURE        h 13 |<br>0 100 200 300 400 500<br>Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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10000 20<br>VGS = 0V, f = 1MHz IDD = 95A<br>8000 | CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 Ps, VDSVDSDSDS = 32V= 20V 32V 20V eft ft<br>| PEt =—5<br>Ciss<br>a yy Pt pan<br>6000 a| Uy)ellTEi 12 PTPi tTTTTtT LAL<br>4000 8<br>PNET tA<br>PENT TT BaD 4eEeee<br>2000 SS Coss PE 4 P| TAAL tT<br>0 PSTee C ee rss Scill l l 0 PlAT IT TtfAEEyi fiiAEEyi fiiyi fii fii IT Tt Tt FOR TEST CIRCUITSEE FIGURE         i h 13 |<br> 1  10  100 0 100 200 300 400 500<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>oa<br> 100 i T  = 175  CJ | ° |  1000 | L 10us<br>100us<br> 10 PEa A TE  100 pTlBL l N ET<br>°<br>=== T  = 25  CJ === eee 1ms<br>SS eee ae  T TCJ = 25  C= 175  C° ° ee 10ms<br> 1 eeER LE V      = 0 V GS  10 p  Single Pulse p TIE OTS NE ll<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRL1404S/LPbF 

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160<br>LIMITED BY PACKAGE<br>120<br>\ SA<br>SESE NEERSEREN<br>80<br>SEREREEREDS<br>itt<br>40<br>ING<br>oor<br>SERRE EEEEEE<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 9.** Maximum Drain Current Vs. Case Temperature 

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RD<br>VDS<br>VGS<br>D.U.T.<br>RG<br>+<br>- [V] DD<br>10V<br>F<br>Pulse Width  ≤ 1  µs<br>Duty Factor  ≤ 0.1 % :<br>VDS<br>90% —<br>y<br>|<br>|<br>10% /\<br>VGS a<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 1<br>eee D = 0.50 ee<br>a 0.20 e e<br>0.1 0.10 se a el<br>me en |<br>SSee<br>Sas 0.05 ee ee ed ee | ee |<br>P| eee<br>0.02<br>0.01 SINGLE PULSE PDM<br>0.01 =o Se (THERMAL RESPONSE) s t1<br>|<br>t2<br>pT TT TTPTTT Notes:<br>1. Duty factor D = t   / t1 2<br>Ce 2. Peak TJ = P DM x  ZthJC + TC<br>0.001<br>0.00001 0.0001 C e 0.001 T T 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRL1404S/LPbF 

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1 5V<br>V DS L DRIVER<br>R G D.U.T +<br>- [V][D D]<br>IA S<br>20V iT<br>poe tp 0.01 Ω<br>Fig 12a.   Unclamped Inductive Test Circuit<br>— tp V (BR)DSS<br>pal<br>/ \<br>I AS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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1200<br>ID<br>Nee<br>1000 NE TOP 39A 67A<br>BOTTOM 95A<br>BNE<br>800 PIN | EE<br>600 BENE<br>PN IN |<br>NEN Eee<br>400 INOINU<br>Pp ANAANEIX EE<br>200 PE ARRAARKR EL<br>0 Pt eT ES<br>eS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>10 V TS QG | 50K Ω<br>Ld 12V .2 µ F<br>QGS QGD .3 µ F<br>+<br>D.U.T. -VDS<br>VG<br>VGS<br>3mA<br>Charge = ae IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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## IRL1404S/LPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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D.U.T * + Circuit Layout Considerations<br>   •   Low Stray Inductance<br> •   Ground Plane<br> •   Low Leakage Inductance<br>|(aa)| -       Current Transformer<br>+<br>oe<br>- - +<br>a<br>00<br>RG •   dv/dt controlled by RG +<br>1 ( nd •   ISD controlled by Duty Factor "D" - VDD<br>•   D.U.T. - Device Under Test<br>VGS<br>**----- End of picture text -----**<br>


- Reverse Polarity of D.U.T for P-Channel 

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O) Driver Gate Drive<br>P.W.<br>Period D =<br> es P.W. | Period<br>[          ] ***VGS=10V<br>a _\<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt JN<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>[    ]VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% [    ]ISD<br>**----- End of picture text -----**<br>


*** VGS = 5.0V for Logic Level and 3V Drive Devices 

**Fig 14.** For N-channel HEXFET[®] power MOSFETs 

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## IRL1404S/LPbF D[2] Pak Package Outline Dimensions are shown in millimeters (inches) 

## D[2] Pak Part Marking Information (Lead-Free) 

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T HIS  IS  AN IR F 530S  WIT H PAR T  NU MB E R<br>L OT  CODE  8024AS S E MB L E D ON WW 02, 2000 INT E R NAT IONALR E CT IF IE R a F 530S |<br>IN T H E  AS S E MB L Y L INE  "L " L OGO TOR 002.<br>pos ition indicates  "L ead-F ree"Note: "P" in as s embly line AS S E MB L YL OT  CODE 801?WUU 7U24 DAT E  CODEYE AR  0 =WE E K  02L INE  L  2000<br>**----- End of picture text -----**<br>


## OR 

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PAR T  NU MBE R<br>INT E R NAT IONAL a<br>R E CT IF IE R F 530S<br>L OGO TeaRP002A\<br>80 24 DAT E  CODE<br>P =  DE S IGNAT E S  LE AD-F R EE<br>AS S E MB L YL OT  CODE [ TT br J uOU YE AR  0 =PR ODU CT  (OPT IONAL) 2000<br>WE E K  02<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


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8 

## IRL1404S/LPbF 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

**==> picture [323 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
E XAMPLE : T HIS  IS  AN IR L3103L<br>LOT  CODE  1789 PART  NUMB E R<br>AS S E MB LE D ON WW 19, 1997 INT E RNAT IONAL i<br>IN T HE  AS S E MB LY LINE  "C" RE CT IF IE RLOGO TeaRIRL3103L719C<br>Note: "P" in as s embly line 17 89 DAT E  CODE<br>pos ition indicates  "Lead-F ree" AS S E MB LY YE AR 7 =  1997<br>LOT  CODE WE E K 19<br>LINE  C<br>OR<br>PART  NUMB E R<br>INT E RNAT IONAL i<br>RE CT IF IE R IRL3103L<br>LOGO TO@RP719A<br>DAT E  CODE<br>17 89<br>P =  DE S IGNAT E S  LE AD-F R E E<br>AS S E MB LY PR ODU CT  (OPT IONAL)<br>LOT  CODE YE AR 7 =  1997<br>WE E K 19<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


www.irf.com 

9 

## IRL1404S/LPbF 

## D[2] Pak Tape & Reel Information 

Dimensions are shown in millimeters (inches) 

**==> picture [284 x 258] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR R<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60  (.063 )1.50  (.059 ) 0 .3 68 (.0 145 )<br>0 .3 42 (.0 135 )<br>F E E D  D IR E C TIO N 1.85 (.073) 1 1.60 (.457 )<br>1.65 (.065) 1 1.40 (.449 ) 15 .42 (.60 9)15 .22 (.60 1) 24 .30 (.95 7)23 .90 (.94 1)<br>T R L<br>fo=SN aacHES: 1.75 (.0 69) ain<br>10.9 0 (.42 9) 1.25 (.0 49)<br>10.7 0 (.42 1) 4.72  (.1 36)<br>ep 16 .10 (.6 34) IE 4.52  (.1 78)<br>15 .90 (.6 26)<br>FE E D  D IR E C T IO N<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 4c<br>— 4<br>330.00 60.00 (2.362)<br>(14.173)       M IN .<br>  MAX.<br>N O TES : OO |L 30.40 (1.197)      M A X.<br>1.   C O M FO R M S  T O  EIA-418.2.   C O N TR O LLIN G  D IM EN S IO N : M ILLIM ET ER .3.   D IM EN S IO N  M E A S U R E D  @  H U B . 26.40 (1.039)24.40 (.961)3 IE 4<br>**----- End of picture text -----**<br>


4.   IN C LU D E S F LAN G E D IST O R TIO N  @  O U TER  ED G E. 

**Notes:** 

® Repetitive rating;  pulse width limited by ~~©~~ Calculated continuous current based on maximum allowable max. junction temperature. ( See fig. 11 ) junction temperature; for recommended current-handing of the = 25°C, L = 0.35mH package refer to Design Tip #  93-4. 

Starting TJ = 25°C, L = 0.35mH R @@ G = 25 Ω , IAS = 95A. (See Figure 12) This is applied to D[2] Pak, When mounted on 1" square PCB (6) ISD ≤ 95A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, (FR-4 or G-10 Material) . For recommended footprint and TJ ≤ 175°C soldering techniques refer to application note #AN-994. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

(6) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

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- [Supplier page](https://es.farnell.com/infineon/irl1404strlpbf/mosfet-n-ch-40v-160a-to-263/dp/2839499)
---

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