# Power MOSFET, N Channel, 40 V, 160 A, 0.004 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1013454/)

**URL**: https://novapart.co/products/IRL1404PBF/power-mosfet-n-channel-40-v-160-a-0004-ohm-to
**SKU**: IRL1404PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.9000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 200W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.004ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 160A |
| Drain Source On State Resistance | 0.004ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013454/)

HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

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D<br>VDSS = 40V<br>R  = 4.0m Ω<br>DS(on)<br>G<br>ID = 160A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Seventh Generation HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~Se~~<br>~~—————~~|**Parameter**<br>~~Se~~<br>~~—————~~<br>~~a~~|**Max.**<br>~~ol~~|**Units**<br>~~ol~~|
|---|---|---|---|
|ID@ TC= 25°C<br>~~Se~~<br>~~—————~~|Continuous Drain Current,VGS@ 10V<br>~~Se~~<br>~~—————~~<br>~~a~~|160<br>~~ol~~|A<br>~~ol~~<br>~~a~~|
|ID@ TC= 100°C<br>~~Se~~<br>~~—————~~|Continuous Drain Current, VGS@ 10V<br>~~Se~~<br>~~—————~~<br>~~a~~|110<br>~~ol~~||
|IDM<br>~~—————~~<br>~~a~~|Pulsed Drain Current<br>~~—————~~<br>~~a~~<br>~~a~~|640<br>~~ol~~<br>~~a~~||
|PD@TC= 25°C<br>~~—————~~<br>~~a~~|Power Dissipation<br>~~—————~~<br>~~a~~<br>~~a~~|200<br>~~ol~~<br>~~a~~|W<br>~~ol~~<br>~~a~~|
|~~a~~|Linear DeratingFactor<br>~~a~~|1.3<br>~~a~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~a~~<br>~~eS~~|Single Pulse Avalanche Energy<br>~~a~~<br>|620<br>~~a~~<br>|mJ<br>~~a~~<br>|
|IAR<br>~~eS~~|Avalanche Current<br>|95<br>|A<br>|
|EAR<br>~~eSa~~|Repetitive Avalanche Energy<br>~~a~~|20<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~Se~~|-55  to + 175<br>~~Se~~|°C<br>~~Se~~|
|~~a~~|SolderingTemperature, for 10 seconds<br>~~Se~~|300(1.6mm from case)<br>~~Se~~||
|~~a ~~|Mounting torque, 6-32 or M3 srew<br> ~~a~~|10 lbf•in (1.1N•m)||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min. **|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|40|–––|–––|V|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~a~~<br>~~rs~~|–––<br>~~a~~<br>~~rs~~|0.038 <br>~~a~~<br>~~rs~~|–––<br>~~a~~<br>~~rs~~|V/°C<br>~~a~~<br>~~rs~~|Reference to 25°C, ID= 1mA<br>-<br>~~———~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~rs~~|–––<br>~~a~~<br>~~rs~~|–––<br>~~a~~<br>~~rs~~|4.0<br>~~a~~<br>~~rs~~|mΩ<br>~~a~~<br>~~rs~~|VGS= 10V, ID= 95A<br>-<br>~~———~~|
|||–––<br>~~a~~<br>~~rs~~<br>~~ee~~|–––<br>~~a~~<br>~~rs~~|5.9<br>~~a~~<br>~~rs~~||VGS= 4.3V, ID= 40A<br>-<br>~~———~~|
|VGS(th)|Gate Threshold Voltage<br>~~rs~~|1.0<br>~~rs~~<br>~~ee~~<br>~~es es~~|–––<br>~~rs~~<br>~~es~~|3.0<br>~~rs~~|V<br>~~rs~~|VDS= VGS, ID= 250µA<br>~~———~~|
|gfs|Forward Transconductance<br>~~rs~~|93<br>~~ee~~<br>~~rs~~<br>~~es es~~|–––<br>~~rs~~<br>~~es~~|–––<br>~~rs~~|S<br>~~rs~~|VDS= 25V, ID= 95A|
|IDSS|Drain-to-Source Leakage Current<br>~~es~~|–––<br>–––<br>~~es es~~<br>~~es~~|–––<br>–––<br>~~es~~<br>~~es~~|20<br>250<br>~~es~~|µA<br>~~es~~|VDS= 40V, VGS= 0V<br>VDS= 32V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage<br>~~es~~|–––<br>–––<br>~~es~~|–––<br>–––<br>~~es~~|200<br>-200<br>~~es~~|nA<br>~~es~~|VGS= 20V<br>VGS= -20V|
|Qg|Total Gate Charge|–––|–––|140|nC<br>~~ee~~|ID= 95A<br>VDS= 32V<br>VGS= 5.0V, See Fig. 6<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~ee Gs~~|–––<br>~~Gs~~|–––|48|||
|gs<br>Qgd<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~ee Gs~~<br>~~ee~~|–––<br>~~Gs~~<br>~~ee~~|–––<br>~~ee~~|60<br>~~ee~~|||
|td(on)<br>~~ee~~<br>es|Turn-On Delay Time<br>~~ee Gs~~<br>~~ee~~<br>|–––<br>~~Gs~~<br>~~ee~~|18<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|VDD= 20V<br>ID= 95A<br>RG= 2.5ΩVGS= 4.5V<br>RD= 0.25Ω<br>~~®~~|
|tr<br>~~ee~~<br>es~~ee~~|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|270<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>tf<br>~~ee~~<br>es~~ee~~|Turn-Off Delay Time<br>Fall Time<br>~~ee~~<br>~~ee~~|–––<br>–––<br>~~ee~~|38<br>37<br>~~ee~~|–––<br>–––<br>~~ee~~|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––|4.5|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
||||||nH||
|LS<br>~~a~~<br>~~ee~~|Internal Source Inductance<br>~~a~~<br>|–––<br>|7.5<br>|–––<br>|||
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~a~~<br>|–––<br>|6590<br>|–––<br>|pF<br>PF|VGS= 0V<br>VDS= 25V<br>~~Po~~|
|Coss<br>~~a~~<br>~~ee~~<br>ee|Output Capacitance<br>~~a~~<br>~~es~~|–––<br>~~es~~|1710<br>~~es~~|–––<br>~~es~~|||
|Crss<br>~~a~~<br>~~ee~~<br>ee<br>eees|Reverse Transfer Capacitance<br>~~a~~<br>~~es~~<br>es|–––<br>~~es~~|350<br>~~es~~|–––<br>~~es~~||ƒ = 1.0MHz, See Fig. 5<br>~~Po~~<br>PF|
|Coss<br><br>ee<br>eees<br>ee|Output Capacitance<br>~~es~~<br>es|–––<br>~~es~~|6650<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz<br>~~Po~~<br>PF|
|Coss<br>eees<br>ee|Output Capacitance<br>es|–––|1510|–––||VGS= 0V,  VDS= 32V,  ƒ = 1.0MHz<br>VGS= 0V, VDS= 0V to 32V<br>PF|
|Cosseff.<br>ee|Effective Output Capacitance|–––|1480|–––|||
|**Source-Drain Ratings and Characteristics**<br>~~——O~~|||||||
|~~——~~<br>~~ee~~|**Parameter**<br>~~——O~~<br>~~rn~~<br>|**Min.**<br>~~O~~<br>~~nr~~<br>|**Typ. **<br>~~O~~<br>~~nr~~<br>|**Max. **<br>~~O~~<br>~~nr~~<br>|**Units**<br>~~nr~~<br>|**Conditions**<br>~~G~~|
|IS<br>~~——~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~——O~~<br>~~rn~~<br>|–––<br>~~O~~<br>~~nr~~<br>|–––<br>~~O~~<br>~~nr~~<br>|160<br>~~O~~<br>~~nr~~<br>|~~nr~~<br>~~r~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~G~~<br>~~®~~|
|ISM<br>~~——~~<br>~~ee~~|Pulsed Source Current<br>(Body Diode)<br>~~—— O~~<br>~~rn~~<br>~~**e**r~~<br>~~e~~|–––<br>~~O~~<br>~~nr~~<br>~~r~~|–––<br>~~O~~<br>~~nr~~<br>~~r~~|640<br>~~O~~<br>~~nr~~<br>~~r~~|||
|VSD<br>~~ee~~<br>~~ee~~|Diode Forward Voltage<br>~~rn~~<br>~~**e**r~~<br>~~e~~<br>~~ee~~|–––<br>~~nr~~<br>~~r~~|–––<br>~~nr~~<br>~~r~~|1.3<br>~~nr~~<br>~~r~~|V<br>~~nr~~<br>~~r~~|TJ= 25°C, IS= 95A, VGS= 0V<br>~~G~~<br>~~®~~|
|trr<br>~~ee~~<br>~~ee~~<br>~~—————~~|Reverse Recovery Time<br>~~rn ~~<br><br>~~e~~<br>~~ee~~<br>~~—————~~|–––<br> ~~nr~~<br>|63<br>~~nr~~<br>|94<br>~~nr~~<br>|ns<br>~~nr~~<br>|TJ= 25°C, IF= 95A<br>di/dt = 100A/µs<br>~~G~~<br>~~®~~|
|Qrr<br>~~—————~~|Reverse RecoveryCharge<br>~~—————~~|–––|170|250|nC||
|ton<br>~~—————~~|Forward Turn-On Time<br>~~—————~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|||||



## **Source-Drain Ratings and Characteristics** 

|S<br>D<br>G<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br> **Conditions**<br>IS<br>Continuous Source Current<br>MOSFET symbol<br>(Body Diode)<br>–––<br>–––<br>showing  the<br>ISM<br>Pulsed Source Current<br>integral reverse<br>(Body Diode)<br>–––<br>–––<br>p-n junction diode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C, IS= 95A, VGS= 0V<br>trr<br>Reverse Recovery Time<br>–––<br>63<br>94<br>ns<br>TJ= 25°C, IF= 95A<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>170<br>250<br>nC<br>di/dt = 100A/µs<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>160<br>640<br>~~—— O~~<br>~~rn nr~~<br>~~G~~<br>~~ee~~~~**e**r~~<br>~~e~~<br>~~®~~<br>~~ee~~<br>~~—————~~|
|---|



Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11). Starting TJ = 25°C, L = 0.35mH 

- RG = 25 Ω , IAS = 95A. (See Figure 12). 

   - ISD ≤ 95A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C. 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip #  93-4. 

Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 

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 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V DY 20 et | 6.0V a,<br>5.5V 5.5V<br>BOTTOM 5.0V4.3V ) Zeer 4.3V al BOTTOM 5.0V4.3V TiAtoZoe 4.3V ih<br>D ee el y ai n<br>i Y 2<br> 100 ALL, (ee  100 a)go rrQa al<br>’ / AP eeee a ee el<br>7A ll DP Aan ee |<br> 10 T M 20µs PULSE WIDTHT  = 25J °C  10 Ai me 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 160A<br>SS T  = 25  CJ ° S 2.0 G T<br>_a n A<br>AtLd LEE<br>T  = 175  CJ ° 1.5<br>YA EL<br>vee Pe<br>1.0<br>VATY | I] | | LSOE E RERDSE a0eT RERRER EEL<br>TEE<br>TELE<br>0.5 PLETE<br>V      = 15VDS<br> 100 20µs PULSE WIDTH 0.0 ET E EE VGS ET = 10V<br>4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 20<br>VGS = 0V, f = 1MHz ID = 95A<br>8000 Tya CCCissrssoss === CCCgsgdds + C+ Cgd ,gd C      SHORTEDds 16 reTAF VVDSDS == 32V 20V SCE<br>6000 |CAT)SEaa Ciss SRSTyy 12 Saeeen7P|Ceett Aane<br>NT AT Seep 28enenAT<br>4000 SAS 8 AT<br>2000 a Coss 4 A<br>FOR TEST CIRCUIT<br>Sy, Crss SCOTT A SEE FIGURE       13<br>0 0<br>crete, EP An<br> 1  10  100 0 100 200 300 400 500<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>Saeeees>—oee| = [yp] att<br>| | | | dP tt PT A TT T T<br> 100  1000<br>Bane”? T  = 175  CJ °  4ERREEn AT T TT 10us<br>HAHA EE PS Sif<br>100us<br> 10  100<br>S T  = 25  CJ ° S IN S 1ms<br> T TCJ = 25  C= 175  C° ° 10ms<br> 1 EEREPOEEE ERA V      = 0 V GS F  10 P  Single Pulse cSc So<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0  1  10 TS ll  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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160<br>LIMITED BY PACKAGE<br>PI vos A<br>120<br>ps | “6 (i peur<br>-<br>PEN EE i<br>SEReeeeNeee tov<br>80 NN Pulse Width ≤ 1  Hs<br>≤ 0.1 %<br>CCT NIS ><br>pot NG<br>40<br>VDS<br>COE 90% —<br>0<br>25 50 75 100 125 150 175<br>pet T   , Case TemperatureC (  C)° x \/<br>10% /\_\<br>VGS \<br>Fig 9.   Maximum Drain Current Vs.<br>Case Temperature td(on) tr td(off) tf<br> 1<br>n D = 0.50 e eeee<br>0.20<br>P p SSS<br>0.1 e 0.10 tell<br>er<br>= 0.05<br>pTSensi 0.02 eee [e] een ee e l eeeeee<br>ae 0.01 oo SINGLE PULSE coal | | PDM<br>0.01 ert (THERMAL RESPONSE) I ETT<br>t1<br>So e t2<br>a | Notes:<br>1. Duty factor D = t   / t1 2<br>alll 2. Peak T J = P DM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>ose 20V in<br>tp 0.01 Ω<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_. tp<br>/a<br>|<br>IAS 7<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>VG<br>te<br>lal Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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1500<br>ID<br>PtEy TOP 49A<br>101A<br>WER<br>1200 KER BOTTOM 121A<br>PNT<br>900<br>ENEEt<br>600 NOLEN EE<br>PSA A Pt<br>300<br>POS NN<br>P| USN<br>0<br>25 50 75 100 125 150 175<br>°<br>Piette Starting T  , Junction TemperatureJ | SS: (  C)<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>en .3 µ a F<br>+<br>D.U.T. -VDS<br>VGS<br>6<br>3mA<br>a IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TeaR 019<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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---

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