# Power MOSFET, N Channel, 40 V, 110 A, 6500 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:8650861/)

**URL**: https://novapart.co/products/IRL1004SPBF/power-mosfet-n-channel-40-v-110-a-6500-ohm-to-263
**SKU**: IRL1004SPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.2500
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.1W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 6500µohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650861/)

Logic-Level Gate Drive Advanced  Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

HEXFET[®] Power MOSFET 

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D<br>VDSS = 40V<br>R  = 0.0065Ω<br>DS(on)<br>G<br>ID = 130A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1004L) is available for lowprofile application. 

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D [2] Pak TO-262<br>IRL1004S IRL1004L<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>—,-—|**Parameter**<br>**Absolute Maximum Ratings**<br>—,-—|**Max.**<br>—,-—|**Units**<br>—,-—|
|---|---|---|---|
|ID@ TC= 25°C<br>~~oo~~|Continuous Drain Current, VGS@ 10V<br>~~oo~~|130<br>5|A<br>~~a~~<br>~~$~~|
|ID@ TC= 100°C<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~|92<br>~~a~~<br>~~$~~||
|IDM|Pulsed Drain Current|520||
|PD@TA= 25°C<br>~~a~~|Power Dissipation<br>~~a~~|3.8<br>~~a~~|W<br>~~a~~|
|PD@TC= 25°C<br>~~oo~~<br>~~es~~<br>~~a~~|Power Dissipation<br>~~oo~~<br>~~ee~~<br>|200<br>~~oo~~<br>~~ee~~<br>|W<br>~~oo~~<br>~~eeee~~<br>|
|~~es~~<br>~~a~~|Linear DeratingFactor<br>~~ee~~<br>|1.3<br>~~ee~~<br>|W/°C<br>~~eeee~~<br>|
|VGS<br>~~es~~<br>~~a~~|Gate-to-Source Voltage<br>~~ee~~<br>|± 16<br>~~ee~~<br>|V<br>~~eeee~~<br>|
|EAS<br>~~es~~<br>~~a~~|Single Pulse Avalanche Energy<br>~~ee~~<br>|700<br>~~ee~~<br>|mJ<br>~~eeee~~<br>|
|IAR<br>~~ee~~|Avalanche Current<br>~~ee~~|78<br>~~ee~~|A<br>~~ee~~|
|EAR<br>~~ee~~|Repetitive Avalanche Energy<br>~~ee~~<br>~~op~~|20<br>~~ee~~<br>~~op~~|mJ<br>~~ee~~<br>~~op~~|
|dv/dt<br>~~a~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~pf~~|5.0|V/ns|
|TJ<br>TSTG<br>~~pf~~|Operating Junction and<br>Storage Temperature Range<br>~~pf~~|-55  to + 175|°C|
|~~pf~~|Soldering Temperature, for 10 seconds<br>~~pf~~|300 (1.6mm from case)||



07/19/04 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>er|**Min. **<br>er<br>~~es~~|**Typ. **<br>er<br>~~es~~|**Max.**<br>er<br>~~ee~~|**Units**<br>er<br>~~eeee~~|**Conditions**<br>er|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ss~~|40<br>~~es ~~<br>~~ss~~<br>~~rs~~|–––<br> ~~es ~~<br>~~ss~~<br>~~eG~~|–––<br> ~~ee~~<br>~~ss~~<br>~~eG~~|V<br>~~ee ee~~<br>~~ss~~<br>~~co~~|VGS= 0V, ID= 250 A<br>~~ss~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~rs~~|0.04<br>~~es~~<br>~~eG~~|–––<br>~~es~~<br>~~eG~~|V C<br>~~es~~<br>~~co~~|Reference to 25 C, ID= 1mA<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~EE~~<br>~~|~~|~~rs ~~<br>~~EE~~<br>~~|—|—|~~|~~eG~~<br>~~EE~~<br>~~—|—|~~|0.0065<br>~~eG~~<br>~~EE~~<br>~~—|—|~~|0.0065<br>Ω<br>~~co~~<br>~~EE~~|VGS= 10V,ID= 78A<br>~~EE~~<br>~~®~~|
|||~~EE~~<br>~~|—|—|~~<br>~~Ds~~|~~EE~~<br>~~—|—|~~<br>~~Ds~~|0.009<br>~~EE~~<br>~~—|—|~~||VGS= 4.5V, ID= 65A<br>~~EE~~<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~|~~<br>~~es~~|1.0<br>~~| —|—|~~<br>~~es~~<br>~~Ds~~<br>~~feed~~|–––<br>~~—|—|~~<br>~~es~~<br>~~Ds~~<br>~~feed ee~~|~~—|—|~~<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~|VDS= VGS, ID= 250 A<br>~~®~~<br>~~es~~|
|gfs|Forward Transconductance<br>~~es~~|63<br>~~Ds~~<br>~~es~~<br>~~feed~~|~~Ds~~<br>~~es~~<br>~~feed ee~~|~~es~~<br>~~ee~~|S<br>~~es~~<br>~~ee~~|VDS= 25V, ID= 78A<br>~~es~~|
|IDSS|Drain-to-Source Leakage Current<br>~~EY~~|~~feed~~<br>~~EY~~|~~feed ee~~<br>~~EY~~|25<br>~~ee~~<br>~~EY~~|~~ee~~<br>~~EY~~|VDS= 40V, VGS= 0V<br>~~EY~~|
|||–––<br>~~EY~~|–––<br>~~EY~~|250<br>~~EY~~||VDS= 32V, VGS= 0V, TJ= 150°C<br>~~EY~~|
|aess<br>~~es~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~|nA|VGS= 16V|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>~~ee~~<br>|-100<br>~~ee~~<br>~~ee~~<br>||VGS= -16V|
|Qg<br>~~es~~<br>~~——~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee ~~<br>~~ee~~<br>ee<br><br>~~ee~~|–––<br> ~~ee~~<br>~~ee~~<br>|100<br>~~ee~~<br>~~ee~~<br>|nC|ID= 78A<br>VDS= 32V<br>VGS= 4.5V, See Fig. 6 and 13<br>~~6~~|
|Qgs<br>~~es~~<br>~~——~~|Gate-to-Source Charge<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|32<br>~~ee~~|||
|Qgd<br>~~es~~<br>~~——~~|Gate-to-Drain("Miller")Charge<br>|–––<br>ee<br><br>~~ee~~|–––<br>|43<br>|||
|td(on)<br>~~——~~<br>~~es~~|Turn-On Delay Time<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>|16<br>~~ee~~<br>|–––<br>~~ee~~<br>|ns|VDD= 20V,<br>ID= 78A,<br>RG= 2.5Ω,<br>RD= 0.18Ω, See Fig. 10<br>~~6~~<br>~~©~~|
|d(on)<br>tr<br>~~——~~<br>~~es~~<br>ee|Rise Time<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~**ee**~~<br>~~**ee**~~|210<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~<br>~~**ee**~~|||
|td(off)<br>~~es~~<br>ee|Turn-Off Delay Time<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|–––<br>~~ee~~<br>~~**ee**~~<br>~~**ee**~~|25<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|–––<br>~~ee~~<br>~~**ee**~~<br>~~ee~~|||
|tf<br><br>ee|Fall Time<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~**ee**~~|14<br>~~**ee**~~<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|||
|~~Sa~~<br>es|~~ee~~<br>~~Sa~~|–––<br>~~**ee**~~<br>~~al~~|~~ee~~<br>~~al~~|–––<br>~~ee~~<br>~~al~~|~~al~~|Between lead,<br>and center of die contact<br>~~©~~|
|Ciss<br>es<br>es|Input Capacitance|–––|5330|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>(OFC)|
|Coss<br>es<br>es|Output Capacitance|–––|1480|–––|||
|Crss<br>es|Reverse Transfer Capacitance|–––|320|–––|||



## **Source-Drain Ratings and Characteristics** 

|ee<br>~~0~~|**Parameter**<br>ee<br>~~0~~|**Min.**<br>ee<br>es|**Typ. **<br>ee|**Max.**<br>ee|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~0~~<br>~~ee~~<br>~~Sn~~|Continuous Source Current<br>(Body Diode)<br>~~0~~<br><br>~~Sn~~|–––<br>es<br>~~|e,~~<br>|–––<br>~~|e,~~<br><br>~~ee~~|130<br>~~|e,~~<br><br>~~ee~~|~~|e,~~|S<br>D<br>G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>~~i~~<br>~~®~~|
|ISM<br>~~eeee~~<br>~~Sn~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~Sn~~|–––<br>~~|e,~~<br>~~ee~~|–––<br>~~|e,~~<br>~~ee~~<br>~~ee~~|520<br>~~|e,~~<br>~~ee~~<br>~~ee~~|||
|VSD<br>~~ee~~<br>~~Sn~~<br>~~So~~|Diode Forward Voltage<br><br>~~Sn~~|–––<br>~~|e,~~<br><br>~~es~~|–––<br>~~|e,~~<br><br>~~ee~~<br>~~es~~|1.3<br>~~|e,~~<br><br>~~ee~~|V<br>~~|e,~~|TJ= 25°C, IS= 78A, VGS= 0V<br>~~i~~<br>~~®~~<br>~~@®~~|
|trr<br>~~Sn~~<br>~~es~~<br>~~So~~|Reverse Recovery Time<br>~~Sn~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|78<br>~~ee~~<br>~~es~~<br>~~es~~|120<br>~~ee~~<br>~~es~~|ns<br>~~es~~|TJ= 25°C, IF= 78A<br>di/dt = 100A/µs<br>~~®~~<br>~~@®~~|
|Qrr<br>~~So~~|Reverse RecoveryCharge|–––<br>~~es~~|180<br>~~es~~|270|nC||
|ton<br>~~So~~<br>~~PT~~|Forward Turn-On Time<br>~~PT~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~eses~~<br>~~@®~~<br>~~PT~~|||||



@ Repetitive rating;  pulse width limited by @ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) 

Calculated continuous current based on maximum allowable 

Starting TJ = 25°C, L = 0.23mH 

junction temperature; for recommended current-handing of the package refer to Design Tip #  93-4 

RG = 25Ω, IAS = 78A. (See Figure 12) ® ISD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Uses IRL1004 data and test conditions 

When mounted on 1" square PCB ( FR-4 or G-10 Material ). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

www.irf.com 

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 10000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>7.0V 7.0V<br>5.5V 5.5V<br> 1000 4.5V 4.5V<br>4.0V 4.0V<br>3.5V 3.5V<br>BOTTOM 2.7V BOTTOM 2.7V<br> 100<br> 100<br>— SS Se ee” 2eee<br>SF Acti nail aT<br> 10<br>aW<br>ZAG  10 VAAN 2.7V RE<br> 1 =<br>2.7V<br>ee Sey aut eT<br>0.1 ert 20µs PULSE WIDTHT  = 25J °C  1 AILL 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5 ID = 130A<br>T  = 25  CJ °<br>2.0<br> 100 PCE a e T  = 175  CJ °<br>a ELT EET ETL<br>1.5<br>Sey2dee 7s  see ae Se m e UIDcall<br> 10<br>———=========—====—— — — — — — —— 1.0 EEEELLEpe TTT<br>|SO eeeOO ETTpea<br> 1<br>ee 0.5 TULLE EEE<br>0.1 PeBREESE per  SESE V      = 50V20µs PULSE WIDTHDS  EES 0.0 EEPEEEEE LE E VGS = 10V<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>2.0 3.0V     , Gate-to-Source Voltage (V)GS 4.0 5.0 6.0 7.0 8.0 9.0 T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 12<br>VGSGS = 0V, f = 1MHz ID = 78 A VDS = 32V<br>Cississ = Cgsgs + Cgd ,gd , C      SHORTEDdsds VDS = 20V<br>8000 TT|| CCCrssossoss Co rssossoss === CCgddsCgddsgddsds + Cgdgd o 10 Ho AEAt e Ee<br>Cississ 8<br>6000<br>ma Co<br>6<br>Cossoss Va<br>4000<br>S | 4 any 4eReeeae<br>papell AEE<br>2000 C C Sfpfoe<br>2<br>Crssrss<br>FOR TEST CIRCUIT<br>nn trr ni44 I TI a A nam a SEE FIGURE       13 |<br>0 0<br> 1  10  100 0 30 60 90 120 150 180<br>V     , Drain-to-Source Voltage (V)DSDS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>T  = 175  CJ °<br> 100  1000<br>——— 4 | || el<br>10us<br> 10  100 100us<br>HOPPE ESR REE<br>T  = 25  CJ °<br>1ms<br> 1 =otft seeea| | tt ao|  Se  10 SSSeviiiie ce ece 10ms<br> T TCJ = 25  C= 175  C° °<br>ieee e ee V      = 0 V GS a  Single Pulse<br>0.1 On  1 tt<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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10000<br>VGSGS = 0V, f = 1MHz<br>=<br>Cississ Cgsgs + Cgd ,gd , C      SHORTEDdsds<br>8000 CCCrssossoss === CCgddsCgddsgddsds + Cgdgd<br>TT|| Co o<br>Cississ<br>6000<br>ma<br>Cossoss<br>4000 S |<br>papell<br>2000 C C<br>Crssrss<br>nn trr ni44 I TI<br>0<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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140 FE R<br>LIMITED BY PACKAGE<br>120<br>Pet e e or<br>| | ssi} | | | TTT| es D.U.T.<br>100 PE tT Ty TE Re a f - y<br>PT | TV NT TT |<br>80<br>Pt tT YP Pp st 10v<br>Poot ft TN | Pulse Width ≤ 0.1 %≤ 1  = us<br>60 PPPt | EETdT rTTE rT rTTKrT TNTTTC Duty Factor -<br>40 PtP| tT| eeTd | dTre cd TrET | dTTT| WNTN Fig 10a. VDS   Switching Time Test Circuit<br>20 PtP| |tT et| | dTtT dTte rTeT| TT| ytA 90% \l...\<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>Pt; tT tT TE TT TT Tt 10% : /\<br>VGS |\¢ le >|\ le ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 =re<br>nr<br>ee ee ee ee ee eee<br>D = 0.50<br>a ee<br>ee et |<br>0.20<br>a<br>0.1 = 0.10 cs NS ce le OS GO OO<br>F me<br>ae a ae ee<br>a To A PDM<br>I 0.05 929 a ee ET t1<br>0.02 SINGLE PULSE t2<br>I 0.01 (THERMAL RESPONSE)<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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L<br>VDS 1800 ID<br>7 Pt<br>D.U.T. 1500 NER TOP 32A 55A<br>RG + BOTTOM 78A<br>| |<br>AWA - VDD NP<br>1200<br>4.5 V IAS<br>i E NE<br>tp 0.01Ω<br>if AAA ° 900 P PNi ENKM |TEINEEEtEy<br>Fig 12a.   Unclamped Inductive Test Circuit 600 Na| NNN NEN EEE<br>300 PTE NAAN| TT<br>V(BR)DSS(BR)DSS 0 SRSAPet ET EE<br>ft tpp 25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br>ft tpp<br>/ VDD<br>/<br>VDS<br>/ / :<br>\<br>IAS —<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>4.5 V a QG 12V .2µF .3µF<br>i as<br>+<br>QGS QGD D.U.T. -VDS<br>VG VGS<br>3mA<br>Charge IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>@ Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop e_<br>® Inductor Curent es ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-channel HEXFET[®] Power MOSFETs 

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## Dimensions are shown in millimeters (inches) 

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THIS  IS AN IRF530S WITH PART  NUMB ER<br>LOT  CODE 8024 INT ERNATIONAL cS<br>ASSE MBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASS EMB LY LINE "L" LOGO IOR 002.<br>pos ition indicates  "Lead-Free"Note: "P" in ass embly line ASS EMBLYLOT  CODE 801? WU +f24 DAT E CODEYE AR 0 =  2000WE EK 02<br>[i U LINE  L<br>PART  NUMBER<br>INT ERNAT IONAL cS<br>RECT IF IER F 530S<br>LOGO TeaR80 P0024)24 DAT E CODE<br>P =  DES IGNATES LEAD-F REE<br>AS SEMBLY Wo PRODUCT  (OPT IONAL)<br>LOT  CODE h LIe be LI YEAR 0 =  2000<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## TO-262 Package Outline 

## Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>AS S EMBLED ON WW 19, 1997IN THE AS SEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO oS TORIRL3103L719¢<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASS EMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL ——S<br>RECTIFIER IRL3103L<br>LOGO T@RP719A<br>DATE CODE<br>17 89<br>P =  DES IGNATES LEAD-FREE<br>ASS EMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  AS S EMBLY SITE CODE<br>**----- End of picture text -----**<br>


www.irf.com 

9 

Dimensions are shown in millimeters (inches) 

**==> picture [339 x 359] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) : 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>iao 1<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>im 16.10 (.634) | 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) of<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES : OB lL       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB. | 26.40 (1.039)24.40 (.961) I 4<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL1004SPBF/power-mosfet-n-channel-40-v-110-a-6500-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl1004spbf/mosfet-n-40v-110a-d2-pak/dp/8650861)
---

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