# Power MOSFET, N Channel, 40 V, 130 A, 6500 µohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8650853/)

**URL**: https://novapart.co/products/IRL1004PBF/power-mosfet-n-channel-40-v-130-a-6500-ohm-to
**SKU**: IRL1004PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0400
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 130A |
| Drain Source On State Resistance | 6500µohm |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650853/)

## PD - 95403 

## IRL1004PbF 

Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 40V<br>R  = 0.0065Ω<br>DS(on)<br>G<br>ID = 130A<br>S<br>TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Ca **Parameter Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 5 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92 A ~~ieao~~ IDM Pulsed Drain Current 520 ~~a~~ PD @TC = 25°C Power Dissipation 200 W ~~o>~~ Linear Derating Factor 1.3 W/°C ~~o>~~ VGS Gate-to-Source Voltage ± 16 V ~~a~~ EAS Single Pulse Avalanche Energy 700 mJ ~~a~~ IAR Avalanche Current 78 A ~~a~~ EAR Repetitive Avalanche Energy 20 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ———-77N79@#9————J Soldering Temperature, for 10 seconds 300 (1.6mm from case) ~~a~~ Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.75|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RqJA|Junction-to-Ambient|–––|62||



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## **IRL1004PbF** 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~rs~~|~~rs~~|~~rs (ee~~|~~(ee~~||
|---|---|---|---|---|---|---|
|rs|**Parameter**<br>rs|**Min. **<br>rs<br>~~rs~~<br>~~es~~|**Typ. **<br>rs<br>~~rs~~<br>~~es~~|**Max. **<br>rs<br>~~rs (ee~~<br>~~de~~|**Units**<br>rs<br>~~(ee~~<br>~~de~~|**Conditions**<br>rs|
|V(BR)DSS<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~|40<br>~~rs ~~<br>~~es~~<br>~~es~~|–––<br> ~~rs ~~<br>~~es~~<br>~~es~~|–––<br> ~~rs (ee~~<br>~~es~~<br>~~de~~|V<br>~~(ee~~<br>~~es~~<br>~~de~~|VGS= 0V, ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ <br>~~Ge~~<br>~~Be~~|Breakdown Voltage Temp. Coefficient<br>~~Ge~~<br>~~Be~~<br>~~|~~|–––<br>~~es~~<br>~~Ge~~<br>~~|~~|0.04<br>~~es ~~<br>~~Ge~~<br>|–––<br> ~~de~~<br>~~Ge~~<br>|V/°C<br>~~de~~<br>~~Ge~~|Reference to 25°C, ID= 1mA<br>~~Ge~~|
|RDS(on)<br>~~Be~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~Be~~<br>~~|~~TT<br>~~a~~|–––<br>~~|~~|––– <br>|0.0065<br>|Ω|VGS= 10V, ID= 78A|
|||–––<br>~~|~~TT<br>~~es~~|––– <br>TT<br>~~es~~|0.009<br>TT||VGS= 4.5V, ID= 65A|
|VGS(th)<br>~~Be~~<br>~~es~~<br>~~a~~|Gate Threshold Voltage<br>~~Be~~<br>~~|~~<br>~~es~~<br>~~a~~|1.0<br>~~|~~<br>~~es~~<br>~~es~~|–––<br><br>~~es~~<br>~~es~~|–––<br><br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~es~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|63<br>~~es~~|–––<br>~~es~~|–––|S|VDS= 25V, ID= 78A|
|IDSS<br>~~SS~~<br>|Drain-to-Source Leakage Current<br>~~SS~~<br>~~a~~<br>|–––<br>~~SS~~|–––<br>~~SS~~|25<br>~~SS~~|nA<br>µA<br> ~~SO~~<br>~~a~~<br>(|VDS= 40V, VGS= 0V<br>~~SO~~|
|||–––<br>~~SS~~<br>~~a~~<br>|–––<br>~~SS~~<br>~~a~~<br>|250<br>~~SS~~<br>~~a~~<br>(||VDS= 32V, VGS= 0V, TJ= 150°C<br>~~SO~~<br>~~a~~|
|IGSS<br>~~a~~<br>Gc|Gate-to-Source Forward Leakage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|100<br>~~a~~(||VGS= 16V|
||Gate-to-Source Reverse Leakage<br><br>Gc|–––<br><br>Gc|–––<br><br>Gc|-100<br>(<br>Gc||VGS= -16V|
|Qg<br>~~eees~~<br>~~a~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~<br>~~es~~|–––<br>~~es~~|100<br>~~es~~|nC|ID= 78A<br>VDS= 32V<br>VGS= 4.5V, See Fig. 6 and 13<br>~~@~~|
|Qgs<br>~~eees~~<br>~~a~~|Gate-to-Source Charge<br>~~es~~<br>~~re~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|32<br>~~es~~<br>~~ee~~|||
|Qgd<br>~~eees~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~re~~|–––<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|43<br>~~es~~<br>~~ee~~|||
|td(on)<br>~~a~~<br>~~es~~|Turn-On Delay Time<br>~~re~~<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~es~~|16<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~||VDD= 20V<br>ID= 78A<br>RG= 2.5Ω, VGS= 4.5V<br>RD= 0.18Ω, See Fig. 10<br>~~@~~<br>@|
|tr<br>~~a~~|Rise Time<br>~~re ~~<br>~~a~~|–––<br> ~~ee~~<br>~~a~~|210<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|||
|td(off)<br>~~|~~<br>~~ee~~|Turn-Off Delay Time<br>~~|~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~|25<br>~~|~~<br>~~ee~~|–––<br>~~|~~|||
|tf<br>~~|~~<br>~~ee~~|Fall Time<br>~~|~~<br>~~ee~~|–––<br>~~|~~<br>~~ee~~|14<br>~~|~~<br>~~ee~~|–––<br>~~|~~|||
|LD<br>~~ee~~<br>~~SS)~~|Internal Drain Inductance<br>~~ee~~<br>~~SS)~~|–––<br>~~ee~~<br>~~SS)~~|4.5<br>~~ee~~<br>~~SS)~~|–––<br>~~SS)~~|~~SS)~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>@<br>~~SS)~~|
|LS<br>~~ee~~<br>~~SS)~~<br>~~of~~|Internal Source Inductance<br>~~ee ~~<br>~~SS)~~<br>~~of~~|–––<br> ~~ee~~<br>~~SS)~~|7.5<br>~~ee~~<br>~~SS)~~|–––<br>~~SS)~~|||
|Ciss<br>~~of~~<br>ee~~es~~<br>ee|Input Capacitance<br>~~of~~<br>~~es~~|–––<br>~~es~~<br>es|5330<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~of~~<br>ee~~es~~<br>ee|Output Capacitance<br>~~of~~<br>~~es~~|–––<br>~~es~~<br>es|1480<br>~~es~~|–––<br>~~es~~|||
|Crss<br>ee~~es~~<br>ee|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>es|320<br>~~es~~|–––<br>~~es~~|||



## **Source-Drain Ratings and Characteristics** 

|~~SSS~~|**Parameter**<br>rs<br>~~SSS~~|**Min. **<br>rs<br>~~rs rs~~<br>~~SSS~~|**Typ. **<br>rs<br>~~rs~~|**Max. **<br>rs<br>~~Gd~~|**Units**<br>rs|**Conditions**<br>rs<br>~~ee:~~|
|---|---|---|---|---|---|---|
|IS<br>~~SSS~~|Continuous Source Current<br>(Body Diode)<br>~~SSS~~|–––<br>~~rs rs~~<br>~~SSS~~|–––<br>~~rs~~|130<br>~~Gd~~|A<br>|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~ee:~~<br>|
|ISM<br>~~SSS~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~SSS~~<br>~~a~~|–––<br>~~SSS~~<br>|–––<br>|520<br>|||
|VSD<br>~~SSS~~<br>~~a~~|Diode Forward Voltage<br>~~SSS~~<br>~~a~~|–––<br>~~SSS~~<br>|–––<br>|1.3<br>|V<br>|TJ= 25°C, IS= 78A, VGS= 0V<br>~~ee:~~<br>|
|trr<br>~~a~~|Reverse Recovery Time<br>~~aee~~|–––<br>~~ee~~|78<br>~~ee~~|120<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C, IF= 78A<br>di/dt = 100A/µs<br>~~ee~~<br>@|
|Qrr<br>|Reverse RecoveryCharge<br>~~ee~~<br>~~a~~|–––<br>~~ee~~|180<br>~~ee~~|270<br>~~ee~~|nC<br>~~ee~~||
|ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|||||



## **Notes:** 

- ©@ Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2% max. junction temperature. (See fig. 11) 

- © Starting TJ = 25°C, L =0.23mH © RG = 25Ω, IAS = 78A. (See Figure 12) 

- © ISD ≤78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip #93-4 

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Tear Rectifier<br> 10000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>7.0V 7.0V<br>5.5V a 5.5V i as cl<br> 1000 4.5V4.0V 0 | 4.5V4.0V Htee<br>3.5V 3.5V<br>BOTTOM 2.7V BOTTOM 2.7V<br> 100<br>aii coset eset W AI<br> 100<br>PF ze<i eeeee MH7H|<br> 10<br>Ae  10 Ait 2.7V i<br> 1 | ©etA a tt<br>= 2.7V te |<br>eezi ee ee 20µs PULSE WIDTHT  = 25J °C | [AL] CTAtT 20µs PULSE WIDTHT  = 175J °C<br>0.1 ait  1 TU<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 130A<br>T  = 25  CJ °<br>===saq=—==——==eeHO| 2.= eae eee oe UT<br>2.0<br> 100 S S eer  te T  = 175  CJ ES ° LEESULAUEEUOUORORENNOOEEDDSEEE<br>2’ eeee<br>S/o eee PELE<br>PAPER 1.5 Le |<br> 10<br>{AAT EEE EEE LLL ee<br>| tt | tt Be vaae<br>PotSSeS|fT  SS ESSSS=== 1.0 ULL| LrLL eer<br> 1<br>At | | | PETE EEE<br>0.5<br>eeSSS ==ee ee eee=eee CLL<br>V      = 50VDS 25<br>0.1 PE EP 20µs PULSE WIDTH 0.0 PTE T VGS = 10V<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000 12<br>8000 PT7 VCCCGSissrssoss ==== 0V,CCCgsgdds + C+ Cf = 1MHzgd ,gd C      SHORTEDds 10 Ca an ID = 78 A VVDSDS == 32V 20V FS=m<br>Ciss 8<br>6000<br>a<br>NK Te I 6 PET AAT<br>Coss<br>4000<br>a ll PCA<br>4<br>2000<br>a S| 2 Anes<br>2<br>Crss<br>FOR TEST CIRCUIT<br>0 E aHRll 0 WEAnn EE SEE FIGURE       13<br> 1  10  100 0 30 60 90 120 150 180<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>ee T  = 175  CJ  ee ° ee eee = 4 CL<br> 100  1000<br>See” 42ne eee a A<br>10us<br>YT | [/i7F 7 [| [| | 7— [ [ Tf s ~<br> 10 HOARE  100 pat  ets 100us<br>T  = 25  CJ °<br>1ms<br>BAA | EE Se eeiiecienil<br> 1 iit tT | | | | |  10 S R 10ms<br>= SS See See<br>YTee[ff {[y) ee7— [| fT ee| -— [— -T Tf  T TCJJCJ = 25  C= 175  C° ° a ee EET<br>rE E LE V      = 0 V GS F  Single Pulse e a<br>0.1  1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0  1  10  100<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DSDS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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 10000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>= 4 CL<br> 1000<br>a A<br>10us<br>s ~<br> 100 pat  ets 100us<br>1ms<br>Se eeiiecienil<br> 10 S R 10ms<br>SS See See<br>° a<br>°<br> TCJ T TCJJCJ = 175  C°= 25  C= 175  C° ee EET<br>F  Single Pulse e a<br> 1<br> 1  10  100<br>V     , Drain-to-Source Voltage (V)DSDS<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## **IRL1004PbF** 

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140<br>LIMITED BY PACKAGE<br>BEC You<br>120<br>P PE EE E Ves aut<br>100<br>PT tT TSA PE PE tt Re a f -<br>Pt tT TV ey Ey<br>80 COS 4.5V<br>≤ 1<br>60 PtePt tTtT tTEEeT| EEEE rETKTN TEET Duty Factor ≤ 0.1 % r<br>40 Pt tT ET | EE TT IN Fig 10a.   Switching Time Test Circuit<br>Pt tT Et | EE TT<br>20 Pt tT | te tT te ET TT IN VDS<br>90%<br>Pt tT et | EE TT TT /<br>0 Pi; tT} tT | ttt ft ft |<br>25 50 75 100 125 150 175<br>° |<br>T   , Case TemperatureC (  C)<br>|<br>10%<br>VGS | |<br>Fig 9.   Maximum Drain Current Vs. \¢ o< >| le<br>td(on) tr td(off) tf<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 1 ee rere ee re 0 0 eer sO) es es SEGA) Eee ED<br>nr<br>SS D = 0.50 eeae<br>ener a = eee ee| —— tie<br>0.20 |e<br>0.1 =es 0.10 ce eS AA ol A C(O<br>Po eeer  aLee rp PDM<br>I 0.05 oS a<br>e r ee t1<br>0.02 SINGLE PULSE t2<br>= 0.01 (THERMAL RESPONSE) Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## **IRL1004PbF** 

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L<br>VDS a<br>D.U.T.<br>RG +<br>Wn - VDD<br>4.5 V IAS<br>Po E<br>tp 0.01Ω<br>if AA.<br>°<br>Fig 12a.   Unclamped Inductive Test Circuit<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>t<br>“—- p —<br>/ VDD<br>/<br>VDS<br>/ :<br>fy<br>IAS<br>**----- End of picture text -----**<br>


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1800<br>ID<br>PtEt Ed<br>1500 NEE TOP 32A 55A<br>BOTTOM 78A<br>PN |<br>1200<br>E NE<br>900 P i KE TEINEFT ETEE<br>INE NT<br>600 Na| NNN NEN EEE<br>300 PTE NAAN<br>SS | TT<br>0 Ft tT dtCLSNe<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>4.5 V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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**IRL1004PbF** 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(faa)       Current Transformer<br>| | -<br>+<br>- - +<br>Ke.<br>00)<br>RG •  dv/dt controlled by RG +<br>se •   Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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O) Driver Gate Drive<br>P.W.<br>Period D =<br>es P.W. | Period<br>VGS=10V *<br>a _\<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt JN<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


- VGS = 5V for Logic Level Devices 

**Fig 14.** For N-Channel HEXFET[®] Power MOSFETs 

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## **IRL1004PbF** 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>_ 4 6.10 (.240) gy<br>9ey OC al<br>15.24 (.600)<br>14.84 (.584) LEAD ASSIGNMENTS<br>_ 1.15 (.045) LEAD ASSIGNMENTS<br>     MIN HEXFET       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>mE 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X We [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M = 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) || T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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E XAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 06/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRL1004PBF/power-mosfet-n-channel-40-v-130-a-6500-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irl1004pbf/mosfet-n-40v-130a-to-220/dp/8650853)
---

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