# IGBT, 47 A, 1.65 V, 192 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:2456703/)

**URL**: https://novapart.co/products/IRGP6630DPBF/igbt-47-a-165-v-192-w-600-to-247ac-3-pins
**SKU**: IRGP6630DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.2500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 192W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 47A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456703/)

International 

IRGP6630DPbF IRGP6630D-EPbF 

## _**Insulated Gate Bipolar Transistor  with Ultrafast Soft Recovery Diode**_ 

VCES = 600V C C C IC = 30A, TC =100°C tSC 5µs, TJ(max) = 175°C G C E C E G G VCE(ON) typ. = 1.65V @ IC = 18A E IRGP6630DPbF IRGP6630D‐EPbF n-channel TO‐247AC TO‐247AD **Applications**  Welding G C E  H Bridge Converters ~~es~~ Gate Collector Emitter **Features Benefits** Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications ~~a~~ 

~~I~~ Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Square RBSOA  and Maximum  Temperature of 175°C Performance and High Power Capability ~~I~~ 5µs Short Circuit Enables Short Circuit Protection Operation ~~I~~ Positive VCE (ON) Temperature Co-efficient Excellent Current Sharing in Parallel Operation ~~a~~ Lead-free, RoHS compliant Environmentally friendly 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRGP6630DPbF|TO-247AC|Tube|25|IRGP6630DPbF|
|IRGP6630D-EPbF|TO-247AD|Tube|25|IRGP6630D-EPbF|



**Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~ee~~|**Absolute Maximum Ratings**<br>~~rr~~|||
|---|---|---|---|
|~~ee~~|**Parameter**<br>~~rr~~|**Max.**|**Units**|
|VCES<br>~~ee~~<br>~~a ~~<br>~~es~~<br>~~SSS~~|Collector-to-Emitter Voltage<br>~~rr~~<br> ~~QO~~<br>~~SSS~~|600<br>~~QO~~<br>~~SSS~~|V<br>~~QO~~<br>~~SSS~~|
|IC@ TC= 25°C<br>~~es~~<br>~~es~~<br>~~SSS~~|Continuous Collector Current<br>~~nD~~<br>~~SSS~~|47<br>~~nD~~<br>~~SSS~~|A<br>~~SSS~~|
|IC @TC= 100°C<br>~~es~~<br>~~es~~<br>~~SSS~~|Continuous Collector Current<br>~~nD~~<br>~~SSS~~|30<br>~~nD~~<br>~~SSS~~||
|ICM<br>~~es~~<br>~~nD~~<br>~~es~~<br>~~SSS~~|Pulse Collector Current, VGE=15V<br>~~nD~~<br>~~nD~~<br>~~nD~~<br>~~SSS~~|54<br>~~nD~~<br>~~nD~~<br>~~nD~~<br>~~SSS~~||
|ILM<br>~~es~~<br>~~SSS~~|Clamped Inductive Load  Current, VGE=20V<br>~~nD~~<br>~~SSS~~|72<br>~~nD~~<br>~~SSS~~||
|IFRM@ TC= 100°C<br>~~es~~<br>~~SSS~~|Diode Repetitive Peak Forward Current<br>~~nD~~<br>~~SSS~~|15<br>~~nD~~<br>~~SSS~~||
|IFM<br>~~SSS~~|Diode Maximum Forward Current<br>~~SSS~~|72<br>~~SSS~~||
|VGE<br>~~SSS~~<br>~~Pee~~<br>~~Sp~~|Continuous Gate-to-Emitter Voltage<br>~~SSS~~<br>~~Pee~~<br>~~Sp~~|±20<br>~~SSS~~<br>~~Pee~~|V<br>~~SSS~~<br>~~Pee~~|
|PD @TC= 25°C<br>~~Sp~~|Maximum Power Dissipation<br>~~Sp~~|192|W|
|PD @TC= 100°C<br>~~Sp~~<br>~~I~~|Maximum Power Dissipation<br>~~Sp~~<br>~~I~~|96<br>~~I~~||
|TJ<br>TSTG<br>~~Sp~~<br>~~I~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~Sp~~<br>~~I~~<br>~~a~~|-40 to +175<br>~~I~~<br>~~a~~|°C<br>~~(Ot~~|
|~~I~~<br>~~ee~~|SolderingTemperature,for 10 sec.<br>~~I~~<br>~~(Ot~~|300(0.063 in.(1.6mm)from case)<br>~~I~~<br>~~(Ot~~||
|~~ee~~|Mounting Torque, 6-32 or M3 Screw<br>~~(Ot~~|10 lbf·in (1.1 N·m)<br>~~(Ot~~|~~(Ot~~|



1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback              November 14, 2014 ~~a~~ 

IRGP6630DPbF/IRGP6630D-EPbF ~~(nnn~~ 

## ~~IGR~~ 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~———————~~|**Parameter**<br>~~———————~~|**Min.**<br>~~e~~~~**e**~~|**Typ. **<br>~~e~~~~**e**~~|**Max**<br>~~ee~~|**Units**<br>~~ee~~|**Conditions**<br>~~ee~~|
|---|---|---|---|---|---|---|
|Qg<br>~~es~~<br>~~———————~~|Total Gate Charge (turn-on)<br>~~es~~<br>~~———————~~|—<br>~~es~~<br>~~e~~~~**e**~~|30<br>~~es~~<br>~~e~~~~**e**~~|—<br>~~es~~<br>~~ee~~|nC<br>~~es~~<br>~~ee~~|IC= 18A<br>VGE= 15V<br>VCC= 400V<br>~~es~~<br>~~ee~~<br>~~ee~~|
|g<br>Qge<br>~~es~~<br>~~———————~~|Gate-to-Emitter Charge (turn-on)<br>~~es~~<br>~~———————~~|—<br>~~es~~<br>~~e~~~~**e**~~|10<br>~~es~~<br>~~e~~~~**e**~~|—<br>~~es~~<br>~~ee~~|||
|ge<br>Qgc<br>~~es~~<br>~~———————~~<br>~~ee~~<br>~~===~~|Gate-to-Collector Charge (turn-on)<br>~~es~~<br>~~———————~~<br><br>~~===~~|—<br>~~es~~<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|15<br>~~es~~<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|—<br>~~es~~<br>~~ee~~<br>|||
|gc<br>Eon<br>~~———————~~<br>~~ee~~<br>~~===~~|Turn-On Switching Loss<br>~~———————~~<br><br>~~===~~|—<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|75<br>~~e~~~~**e**~~<br>~~o~~<br><br>~~===~~|—<br>~~ee~~<br>|µJ <br>~~ee~~|IC= 18A, VCC= 400V, VGE=15V<br>RG= 22, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~ee~~<br>~~ee~~|
|Eoff<br>~~———————~~<br>~~ee~~<br>~~===~~|Turn-OffSwitchingLoss<br>~~———————~~<br>~~es~~<br>~~===~~|—<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~===~~|350<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~===~~|—<br>~~ee~~<br>~~es~~|||
|Etotal<br>~~———————~~<br>~~ee~~<br>~~es~~<br>~~===~~|TotalSwitchingLoss<br>~~———————~~<br>~~es~~<br>~~es~~<br>~~===~~|—<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~es~~<br>~~===~~|425<br>~~e~~~~**e**~~<br>~~o~~<br>~~es~~<br>~~es~~<br>~~===~~|—<br>~~ee~~<br>~~es~~<br>~~es~~|||
|td(on)<br>~~———————~~<br>~~ee~~<br>~~es~~<br>~~===~~|Turn-On delay time<br>~~———————~~<br><br>~~es~~<br>~~===~~|—<br>~~e~~~~**e** ~~<br>~~o~~<br><br>~~es~~<br>~~===~~|40<br> ~~e~~~~**e** ~~<br>~~o~~<br><br>~~es~~<br>~~===~~|—<br> ~~ee~~<br><br>~~es~~|ns<br>~~ee~~||
|d(on)<br>tr<br>~~===~~<br>~~—_~~|Rise time<br>~~===~~<br>~~—_~~|—<br>~~===~~|25<br>~~===~~|—|||
|td(off)<br>~~===~~<br>~~—_~~|Turn-Off delay time<br>~~===~~<br>~~—_~~|—<br>~~===~~|95<br>~~===~~|—|||
|d(off)<br>tf<br>~~===~~<br>~~—_~~|Fall time<br>~~===~~<br>~~—_~~|—<br>~~===~~|20<br>~~===~~|—|||
|Eon<br>~~===~~<br>~~—_~~<br>~~—~~|Turn-On SwitchingLoss<br>~~===~~<br>~~—_~~<br>~~ae~~|—<br>~~===~~<br>~~ae~~|230<br>~~===~~<br>~~ae~~|—<br>~~ae~~|µJ<br>~~ae~~|IC= 18A, VCC= 400V, VGE=15V<br>RG= 22, TJ= 175°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~ee~~|
|Eoff<br>~~—_~~<br>~~—~~|Turn-Off Switching Loss<br>~~—_~~<br>~~ae~~|—<br>~~ae~~|570<br>~~ae~~|—<br>~~ae~~|||
|Etotal<br>~~—~~|Total Switching Loss<br>~~ae~~|—<br>~~ae~~|800<br>~~ae~~|—<br>~~ae~~|||
|td(on)<br>~~—————~~|Turn-On delay time<br>~~—————~~|—<br>~~—————~~|30<br>~~—————~~|—<br>~~—————~~|ns<br>~~—————~~||
|d(on)<br>tr<br>~~—————~~|Rise time<br>~~—————~~|—<br>~~—————~~|25<br>~~—————~~|—<br>~~—————~~|||
|td(off)<br>~~—————~~|Turn-Off delay time<br>~~—————~~|—<br>~~—————~~|100<br>~~—————~~|—<br>~~—————~~|||
|d(off)<br>tf<br>~~—————~~|Fall time<br>~~—————~~|—<br>~~—————~~|80<br>~~—————~~|—<br>~~—————~~|||
|Cies<br>~~FE~~|Input Capacitance<br>~~FE~~|—<br>~~FE~~|1080|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~——$§—~~|
|Coes<br>~~FE~~|Output Capacitance<br>~~FE~~|—<br>~~FE~~|70|—|||
|Cres<br>~~FE~~<br>~~pj~~|Reverse Transfer Capacitance<br>~~FE~~<br>~~pj$$]~~|—<br>~~FE~~<br>~~$$]~~|30<br>~~$$]~~|—|||
|RBSOA<br>~~pj~~|Reverse Bias Safe Operating Area<br>~~pj$$]~~|FULL SQUARE<br>~~$$]~~||||TJ= 175°C, IC= 72A<br>VCC= 480V, Vp ≤ 600V<br>VGE= +20V to 0V<br>~~——$§—~~|
|SCSOA<br>~~pj~~|Short Circuit Safe Operating Area<br>~~pj$$]~~<br>~~es~~|5<br>~~$$]~~|—<br>~~$$]~~|—|µs|TJ= 150°C,VCC= 400V, Vp ≤ 600V<br>VGE= +15V to 0V<br>~~——$§—~~|
|Erec<br>~~pj~~<br>~~———~~|ReverseRecoveryEnergy oftheDiode<br>~~pj$$]~~<br>~~———~~<br>~~es~~|—<br>~~$$]~~<br>~~———~~|180<br>~~$$]~~<br>~~———~~|—<br>~~———~~|µJ<br>~~———~~|TJ= 175°C<br>VCC= 400V, IF= 6A, VGE= 15V<br>Rg = 22L = 0.68mH, L=150nH<br>~~——$§—~~<br>~~———~~|
|trr<br>~~pj~~<br>~~———~~|DiodeReverseRecoveryTime<br>~~pj $$]~~<br>~~———~~<br>~~es~~|—<br>~~$$]~~<br>~~———~~|70<br>~~$$]~~<br>~~———~~|—<br>~~———~~|ns<br>~~———~~||
|Irr<br>~~———~~|Peak Reverse RecoveryCurrent<br>~~———~~<br>~~es~~|—<br>~~———~~|15<br>~~———~~|—<br>~~———~~|A<br>~~———~~||



-  R is measured at TJ of approximately 90°C. 

-  Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

-  Pulse width limited by max. junction temperature. 

-  Values influenced by parasitic L and C in measurement. 

-  fsw =40KHz, refer to figure 26. 

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IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ 

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60<br>For both:<br>Duty cycle : 50%<br>TOLL Tj = 175°C<br>50 Tcase = 100°C<br>Gate drive as specified<br>Power Dissipation = 103W<br>40<br>COSS<br>Square Wave:<br>VCC<br>30 TIS<br>I<br>20<br>Diode as specified<br>Co PS<br>2 I Co<br>10<br>0.1 1 10 100<br>f , Frequency ( kHz )<br>Fig. 1  - Typical Load Current vs. Frequency<br>     (Load Current = IRMS of fundamental)<br>Load Current  ( A )<br>**----- End of picture text -----**<br>


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50<br>40<br>SOE<br>30 PASC<br>20 C CPNCE<br>10 C CEEN=<br>0 CCECN<br>25 50 75 100 125 150 175<br> TC (°C)<br>IC (A)<br>**----- End of picture text -----**<br>


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50 200<br>40<br>SOE<br>150<br>30 PASC<br>100<br>20 C CPNCE<br>50<br>10 C CEEN=<br>0 CCECN 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br> TC (°C)  TC (°C)<br>Fig. 2  - Maximum DC Collector Current vs.   Fig. 3  - Power  Dissipation vs.<br>Case Temperature<br>Case Temperature<br>100 100<br>10µsec<br>100µsec<br>10<br>ey 1msec 10 Oe<br>1 DC<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 Ay 1 ee<br>1 10 100 1000 10 100 1000<br>VCE (V) VCE (V)<br>Fig. 4  - Forward SOA  Fig. 5  - Reverse Bias SOA<br>TC = 25°C; TJ ≤ 175°C; VGE = 15V  TJ = 175°C; VGE = 20V<br>IC (A)<br>IC (A) IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br>


**Fig. 2** - Maximum DC Collector Current vs. 

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IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ 

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72 72<br>VGE = 18V VGE = 18V<br>60 V GE = 15V 60 V GE = 15V<br>VGE = 12V VGE = 12V<br>VGE = 10V VGE = 10V<br>48 VGE = 8.0V 48 VGE = 8.0V<br>36 FyTE = 36 TTAWE<br>24 24<br>12 fe 12<br>0 aa 0 PEEEIE<br>0 2 4 6 8 10 0 2 4 6 8 10<br> VCE (V)  VCE (V)<br>Fig. 6  - Typ. IGBT Output Characteristics   Fig. 7  - Typ. IGBT Output Characteristics<br>TJ = -40°C; tp = 20µs  TJ = 25°C; tp = 20µs J = 25°C; tp = 20µs  = 25°C; tp = 20µs<br>72 72<br>VGE = 18V -40°C<br>60 V GE = 15V 60 25°C<br>VGE = 12V 175°C<br>VGE = 10V<br>48 V GE  = 8.0V a= 48 aanEet/e<br>EP souen/40<br>36 a 36 Sean, 4a0<br>24 Tea 24 S aa0 00<br>12 T= 12 fon/ace<br>0 FBS 0 PA<br>0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br> VCE (V)  VF (V)<br>Fig. 8  - Typ. IGBT Output Characteristics   Fig. 9  - Typ. Diode Forward Voltage Drop<br>TJ = 175°C; tp = 20µs  Characteristics<br>8 8<br>6 I CE = 9.0A 6<br>ICE = 18A ICE = 9.0A<br>ICE = 36A ICE = 18A<br>4 |7| 4 a iei ICE = 36A<br>2 2<br>i (a<br>0 fF 0 fr<br>5 10 15 20 5 10 15 20<br> VGE (V)  VGE (V)<br>ICE (A) ICE (A)<br>ICE (A)<br>VCE (V) VCE (V)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs J = 25°C; tp = 20µs  = 25°C; tp = 20µs 

**Fig. 9** - Typ. Diode Forward Voltage Drop 

**Fig. 10** - Typical VCE vs. VGE TJ = -40°C 

**Fig. 11** - Typical VCE vs. VGE TJ = 25°C 

4 ~~—~~ 

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## ~~1I6aR~~ 

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8<br>6 I CE  = 9.0A<br>ICE = 18A<br>ICE = 36A<br>4 HE<br>2<br>oS<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 12  - Typical VCE vs. VGE<br>TJ = 175°C<br>2000<br>1600<br>1200<br>800 EOFF<br>400 E ON<br>Z|<br>0<br>0 10 20 30 40<br>IC (A)<br>Fig. 14  - Typ. Energy Loss vs. ICC<br>TJ = 175°C; ; VCE = 400V, RG = 22; VGEJ = 175°C; ; VCE = 400V, RG = 22; VGE = 175°C; ; VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE= 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V<br>1000<br>800<br>ZA<br>600 E OFF<br>400 EON<br>200<br>4<br>0<br>0 20 40 60 80 100<br>Rg ()<br>VCE (V)<br>J)<br><br>Energy (<br>J)<br><br>Energy (<br>**----- End of picture text -----**<br>


**Fig. 14** - Typ. Energy Loss vs. ICC TJ = 175°C; ; VCE = 400V, RG = 22; VGEJ = 175°C; ; VCE = 400V, RG = 22; VGE = 175°C; ; VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE= 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V 

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72<br>60 T J  = 25°C<br>TJ = 175°C<br>48<br>36 ph<br>24<br>12<br>0 ip<br>4 6 8 10 12 14 16<br> VGE (V)<br>Fig. 13  - Typ. Transfer Characteristics<br>VCE = 50V; tp = 20µs CE = 50V; tp = 20µs  = 50V; tp = 20µs<br>1000<br>td OFF<br>100<br>tF<br>—<br>t R<br>10 4 td ON<br>1 WE<br>0 10 20 30 40<br>IC (A)<br>Fig. 15  - Typ. Switching Time vs. ICC<br>TJ = 175°C;  VCE = 400V, RG = 22; VGEJ = 175°C;  VCE = 400V, RG = 22; VGE = 175°C;  VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE = 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V<br>1000<br>td OFF<br>100<br>tF<br>td ON<br>t R<br>10 EZaal<br>0 20 40 60 80 100<br>RG ()<br>ICE (A)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


**Fig. 13** - Typ. Transfer Characteristics VCE = 50V; tp = 20µs CE = 50V; tp = 20µs  = 50V; tp = 20µs 

**Fig. 15** - Typ. Switching Time vs. ICC TJ = 175°C;  VCE = 400V, RG = 22; VGEJ = 175°C;  VCE = 400V, RG = 22; VGE = 175°C;  VCE = 400V, RG = 22; VGECE = 400V, RG = 22; VGE = 400V, RG = 22; VGEG = 22; VGE = 22; VGE; VGE; VGEGE = 15V 

**Fig. 17** - Typ. Switching Time vs. RG TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V J = 175°C; VCE = 400V, ICE = 18A; VGE = 15V = 175°C; VCE = 400V, ICE = 18A; VGE = 15V CE = 400V, ICE = 18A; VGE = 15V  = 400V, ICE = 18A; VGE = 15V CE = 18A; VGE = 15V  = 18A; VGE = 15V GE = 15V  = 15V 

**Fig. 16** - Typ. Energy Loss vs. RG G TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V TJ = 175°C; VCE = 400V, ICE = 18A; VGE = 15V J = 175°C; VCE = 400V, ICE = 18A; VGE = 15V = 175°C; VCE = 400V, ICE = 18A; VGE = 15V CE = 400V, ICE = 18A; VGE = 15V  = 400V, ICE = 18A; VGE = 15V CE = 18A; VGE = 15V  = 18A; VGE = 15V GE = 15V  = 15V 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 ~~ys ©~~ 

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IRGP6630DPbF/IRGP6630D-EPbF<br>i#4,k<br>25 25<br>RG = 10<br>20 20<br>[te |ft<br>RG = 22<br>15 Zanes 15 ft ff<br>RG = 47<br>10 10<br>ey tt — ptRUREeSATRUREeSATSAT<br>5 +7 RG = 100 5 |<br>0 et ft ft 0 eft|tfPtefft|tfPtef|tfPteftfPteffPtefPteff<br>2 4 6 8 10 12 0 20 40 60 80 100<br>IF (A) RG (<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br>


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25<br>20<br>15 |ft ff<br>10<br>ptRUREeSATRUREeSATSAT<br>|<br>5<br>0 eft|tfPtefft|tfPtef|tfPteftfPteffPtefPteff<br>0 20 40 60 80 100<br>RG (<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 19** - Typ. Diode IRR  vs. RG TJ = 175°C 

**Fig. 18** - Typ. Diode IRR  vs. IF TJ = 175°C 

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2000<br>1500<br>12A<br>10<br>1000 47  22<br>100<br>6A<br>500<br>3A<br>0<br>0 200 400 600 800 1000 1200 1400<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


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25<br>20<br>15<br>10<br>5<br>0 200 400 600 800 1000 1200<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 20** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 6A; TJ = 175°C 

**Fig. 21** - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 

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350<br>RG = 10<br>300 C R t G = 22 TT<br>RG = 47<br>250<br>RG = 100<br>200<br>ZZ<br>150<br>CFE<br>100<br>50<br>TTI<br>0<br>2 4 6 8 10 12<br>IF (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


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20 100<br>16 80<br>Tsc Isc<br>12 60<br>NZ<br>8 x 40<br>4 20<br>0 FEEL 0<br>9 10 11 12 13 14 15 16<br>VGE (V)<br>Time (µs) Current (A)<br>**----- End of picture text -----**<br>


**Fig. 23** - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C 

**Fig. 22** - Typ. Diode ERR vs. IF TJ = 175°C 

6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 ~~=°°—~~ 

IRGP6630DPbF/IRGP6630D-EPbF 

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10000 16<br>TeoR<br>14 VCES = 400VCES = 400V= 400V<br>1000 Tn Cies 12 =foo VCES = 300VCES = 300V = 300V Va<br>10<br>100 PTT yyy 8 op EE EE<br>Coes 6<br>S=am aceon<br>10 NSS Cres EE 4 CVE<br>2<br>1 Seeeee 0 AZAZA<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 24  - Typ. Capacitance vs. VCE  Fig. 25  - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz   ICE = 18A CE = 18A  = 18A<br>50<br>40<br>D=0.1<br>30 =<br>D=0.2<br>20 PSION<br>D=0.5<br>10<br>~LSA<br>0 aN<br>100 125 150 175<br>Case Temperature (°C)<br>Fig 26.   Maximum Diode Repetitive Forward Peak Current vs. Case Temperature<br>1<br>D = 0.50<br>0.20<br>0.1 Him caneCae ULTTT LlTT<br>0.10<br>0.05 R1R1 R2R2 R3R3 Ri (°C/W)  i (sec)<br> J  J C  C 0.21694  0.00021<br>0.02 1  1  2  2  3 3 0.29812  0.000939<br>0.01<br>0.01 Ci Ci =  = i  Ri iRi 0.26453  0.008391<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>te<br>0.001<br>cue AME LL<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Repetitive Peak Current (A)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


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16<br>14 VCES = 400VCES = 400V= 400V<br>12 foo=foo VCES = 300VCES = 300V = 300V Va<br>10<br>op EE EE<br>8<br>6<br>aceon<br>4 CVE<br>2<br>AZAZA<br>0<br>0 5 10 15 20 25 30 35<br>Q G, Total Gate Charge (nC)<br>Fig. 25  - Typical Gate Charge vs. VGE<br> ICE = 18A CE = 18A  = 18A<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 27 -** Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 

7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 ~~ee~~ 

~~LR~~ 

IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ 

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10<br>D = 0.50 LU ao<br>1 0.20<br>0.10<br>Si AFBae ee coal<br>0.05<br>°<br>Ri ( C/W)  i (sec)<br>0.1 0.02 0.01 J  J  1  1 R 1R1  2 R2 2R2 R 33R 3 3 R 4  4R 4 4  C  C 0.40747 1.84187 2.51697  0.000104 0.000268 0.002634<br>Ci= iRi<br>0.01 Dall ed Ci= iRi<br>Beall ee 1.13369  eee 0.026058  ee<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Si ena<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 28 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

8 ~~—~~ 

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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>


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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

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diode clamp /<br>DUT<br>4X L<br>DC VCC<br>-5V<br>DUT DUT / VCC<br>DRIVER<br>Rg<br>RSH<br>Fig.C.T.3  - S.C. SOA Circuit  Fig.C.T.4  - Switching Loss Circuit<br>C force<br>R =  [VCC]<br>ICM<br>100K<br>D1 22K<br>C sense<br>VCC<br>DUT DUT<br>G force 0.0075µF<br>Rg<br>E sense<br>fib<br>E force<br>Fig.C.T.5  - Resistive Load Circuit  Fig.C.T.6  - BVCES Filter Circuit<br>9  www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014<br>**----- End of picture text -----**<br>


IRGP6630DPbF/IRGP6630D-EPbF ~~_~~ 

## ~~IGOR~~ 

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600 30 600 30<br>tr<br>TEST<br>tf<br>CURRENT<br>500 25 500 25<br>400 20 400 20<br>90% ICE<br>300 Te 15 300 fw 15<br>90% ICE<br>200 10 200 10<br>oe ee<br>10% VCE 10%ICE<br>100 5 100 5<br>yi re i 10% VCE<br>10% ICE<br>0 0 0 0<br>Bone YE<br>Eon Loss<br>Eoff Loss<br>-100 -5 -100 -5<br>-0.2 0 0.2 0.4 0.6 0.8 -0.4 0 0.4 0.8 1.2<br>time (µs)<br>time(µs)<br>Fig. WF1  - Typ. Turn-off Loss Waveform  Fig. WF2  - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4  @ TJ = 175°C using Fig. CT.4<br>600 120<br>20<br>500 100<br>15 oo a<br>QRR VCE<br>400 80<br>10 ~<br>tRR ICE<br>5 300 60<br>0 200 40<br>-5<br>Peak 100 20<br>IRR<br>We s<br>-10<br>0 0<br>Ll J<br>-15<br>-100 -20<br>-20 -10.00 -5.00 0.00 5.00<br>an as<br>-0.15 -0.05 0.05 0.15 0.25 0.35<br>Time (uS)<br>time (µS)<br> (V)  (A)<br> (V)  (A) VCE ICE<br>VCE ICE<br> (A)IF Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br>


**Fig. WF3** - Typ. Diode Recovery Waveform 

@ TJ = 175°C using Fig. CT.4 

**Fig. WF4** - Typ. S.C. Waveform 

@ TJ = 150°C using Fig. CT.3 

10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 ~~—Iae~~ 

IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ 

## ~~LéaR~~ 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

**==> picture [454 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO Po  135H d<br>IN THE ASSEMBLY LINE "H"<br>_ —- 56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 ~~LZ:~~ 

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## ~~LeaR~~ 

## TO-247AD Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AD Part Marking Information 

E X A M P L E : T H IS  IS  A N  IR G P 3 0 B 1 2 0 K D -E W IT H  A S S E M B L Y L O T  C O D E  5 6 5 7 A S S E M B L E D  O N  W W  3 5 , 2 0 0 0 IN  T H E  A S S E M B L Y  L IN E  "H " 

N o te : "P " in  a s s e m b ly  lin e  p o s itio n in d ic a te s  "L e a d -F re e " 

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P A R T  N U M B E R<br>IN T E R N A T IO N A L<br>R E C T IF IE RL O G O IRGIeRP30B1 20KD  0 3 5 H -E |<br>5 6            5 7<br>D A T E  C O D E<br>A S S E M B L Y YE A R  0  =  2 0 0 0<br>L O T  C O D E W E E K  3 5<br>L IN E  H<br>**----- End of picture text -----**<br>


TO-247AD package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 

~~1I6aR~~ 

IRGP6630DPbF/IRGP6630D-EPbF ~~ee~~ 

## **Qualification Information[†  ]** 

|**Qualification Information[†  ]**|||
|---|---|---|
|**Qualification Level**|Industrial||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
||TO-247AD||
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|11/14/2014|Added IFMDiode Maximum Forward Current  = 72A with the noteon page 1.<br>Removed notefrom switching losses test condition on page 2.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

13 www.irf.com ~~a~~ 

13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                         November 14, 2014 ~~a _~~ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRGP6630DPBF/igbt-47-a-165-v-192-w-600-to-247ac-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irgp6630dpbf/igbt-600v-47a-to-247ac-3/dp/2456703)
---

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