# IGBT, 60 A, 1.7 V, 250 W, 650 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:2617415/)

**URL**: https://novapart.co/products/IRGP4740DPBF/igbt-60-a-17-v-250-w-650-to-247ac-3-pins
**SKU**: IRGP4740DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.1300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 250W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2617415/)

IRGP4740DPbF IRGP4740D-EPbF 

VCES = 650V IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 24A 

## **Applications** 

- Industrial Motor Drive 

- UPS 

- Solar Inverters 

## _**Insulated Gate Bipolar Transistor  with Ultrafast Soft Recovery Diode**_ 

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C<br>E<br>E<br>G C<br>G<br>G  [C ]<br>E<br>IRGP4740DPbF  IRGP4740D-EPbF<br>n-channel<br>TO-247AC  TO-247AD<br>G  C  E<br>Gate  Collector  Emitter<br>**----- End of picture text -----**<br>


- Welding 

## **Features** 

## **Benefits** 

Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications ~~PR~~ 5.5µs Short Circuit SOA Rugged  Transient Performance Square RBSOA ~~I~~ Maximum Junction Temperature 175°C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation ~~a I~~ Lead-Free, RoHs compliant Environmentally friendly 

|~~a~~<br>~~Pe~~|**Parameter**<br>~~a~~|**Max.**<br>~~a~~<br>~~|~~|**Units**<br>~~a~~<br>~~|~~|
|---|---|---|---|
|VCES<br>~~a~~<br>~~Pe~~|Collector-to-Emitter Voltage<br>~~a~~|650<br>~~a~~<br>~~|~~|V<br>~~a~~<br>~~|~~|
|IC@ TC =25°C<br>~~a~~<br>~~=~~|Continuous Collector Current<br>~~a~~<br>~~=~~|60<br>~~=~~|A<br>~~=~~<br>~~eee~~|
|IC @TC= 100°C<br>~~I~~<br>~~=~~|Continuous Collector Current<br>~~I~~<br>~~=~~|40<br>~~=~~||
|ICM<br>~~eee~~<br>~~=~~|Pulse Collector Current, VGE=15V<br>~~eee~~<br>~~=~~|72<br>~~eee~~<br>~~=~~||
|ILM<br>~~eee~~<br>~~TO~~<br>~~=~~|Clamped Inductive Load  Current, VGE=20V<br>~~eee~~<br>~~TO~~<br>~~=~~|96<br>~~eee~~<br><br>~~=~~||
|IF @TC= 25°C<br>~~TO~~<br>~~=~~|Diode Continuous Forward Current<br>~~TOeee~~<br>~~=~~|45<br>~~eee~~<br>~~=~~||
|IF @TC= 100°C<br>~~TO~~<br>~~=~~|Diode Continuous Forward Current<br>~~TO~~<br>~~=~~|27<br><br>~~=~~||
|IFM<br>~~=~~<br>~~TF~~|Diode Maximum Forward Current<br>~~=~~<br>~~eee~~|96<br>~~=~~<br>~~eee~~||
|VGE<br>~~TF~~<br>~~_2_~~|Continuous Gate-to-Emitter Voltage<br>~~eee~~<br>~~_2_~~<br>~~+~~|±20<br>~~eee~~<br>~~+~~|V<br>~~eee~~|
|PD @TC= 25°C<br>~~TF~~<br>~~_2_~~<br>~~TO~~|Maximum Power Dissipation<br>~~eee~~<br>~~_2_~~<br>~~+~~<br>~~TO~~|250<br>~~eee~~<br>~~+~~<br>|W<br>~~eee~~|
|PD @TC= 100°C<br>~~_2_~~<br>~~TO~~|Maximum Power Dissipation<br>~~_2_~~<br>~~+~~<br>~~TOeee~~|125<br>~~+~~<br>~~eee~~||
|TJ<br>TSTG<br>~~_2_~~<br>~~TO~~<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~_2_~~<br>~~+~~<br>~~TO~~<br>~~Re~~|-40 to +175<br>~~+~~<br>|C|
|~~a~~<br>~~es~~|Soldering Temperature, for 10 sec.<br>~~Re~~|300 (0.063 in. (1.6mm) from case)||
|~~a~~<br>~~es~~|Mounting Torque, 6-32 or M3 Screw<br>~~Re~~|10 lbf·in (1.1 N·m)||



## **Thermal Resistance** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC(IGBT)|Thermal Resistance Junction-to-Case-(each IGBT) |–––|–––|0.6|°C/W|
|RθJC(Diode)|Thermal Resistance Junction-to-Case-(each Diode) |–––|–––|1.6||
|RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.24|–––||
|RθJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|–––|40||



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IRGP4740DPbF/IRGP4740D-EPbF ~~(nnn~~ 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~ee~~|**Parameter**<br>~~ee~~|**Min.**<br>~~ee~~<br>~~ees~~|**Typ. **<br>~~ee~~<br>~~ees~~|**Max****Units**<br>~~ee~~<br>~~ee~~|**Units**<br>~~ee~~<br>~~ee~~|**Conditions**<br>~~ee~~|
|---|---|---|---|---|---|---|
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge (turn-on)<br>~~ee~~<br>~~es~~|—<br>~~ee~~<br>~~es~~<br>~~ees~~|47<br>~~ee~~<br>~~es~~<br>~~ees~~|70<br>~~ee~~<br>~~es~~<br>~~ee~~|nC<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~———~~|IC= 24A<br>VGE= 15V<br>VCC= 400V<br>~~ee~~<br>~~es~~|
|g<br>Qge<br>~~es~~|Gate-to-Emitter Charge (turn-on)<br>~~es~~|—<br>~~es~~<br>~~ees~~|15<br>~~es~~<br>~~ees~~|23<br>~~es~~<br>~~ee~~|||
|ge<br>Qgc<br>~~es~~<br>~~———~~|Gate-to-Collector Charge (turn-on)<br>~~es~~<br>~~———~~|—<br>~~es~~<br>~~ees~~<br>~~———~~|20<br>~~es~~<br>~~ees~~<br>~~———~~|30<br>~~es~~<br>~~ee~~<br>~~———~~|||
|gc<br>Eon<br>~~———~~<br>~~es~~|Turn-On Switching Loss<br>~~———~~<br>~~I~~|—<br>~~ees~~<br>~~———~~<br>~~I~~<br>~~I~~|520<br>~~ees ~~<br>~~———~~<br>~~I~~|740<br> ~~ee~~<br>~~———~~<br>~~I~~|µJ <br>~~ee~~<br>~~———~~<br>~~ie~~|IC= 24A, VCC= 400V, VGE=15V<br>RG= 10Ω, L = 0.40µH, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery|
|Eoff<br>~~———~~<br>~~es~~|Turn-OffSwitchingLoss<br>~~———~~<br>~~I~~|—<br>~~———~~<br>~~I~~<br>~~I~~|240<br>~~———~~<br>~~I~~|350<br>~~———~~<br>~~I~~|||
|Etotal<br>~~———~~<br>~~es~~|Total SwitchingLoss<br>~~———~~<br>~~I~~|—<br>~~———~~<br>~~I~~<br>~~I~~|760<br>~~———~~<br>~~I~~<br>~~ie~~|1090<br>~~———~~<br>~~I~~<br>~~ie~~|||
|td(on)<br>~~ee~~<br>~~———————~~|Turn-On delay time<br>~~———————~~|—<br>~~———————~~|24<br>~~———————~~<br>~~ie~~|40<br>~~———————~~<br>~~ie~~|ns<br>~~———————~~<br>~~ie~~||
|d(on)<br>tr<br>~~ee~~<br>~~———————~~|Rise time<br>~~———————~~|—<br>~~———————~~|27<br>~~———————~~<br>~~ie~~|45<br>~~———————~~<br>~~ie~~|||
|td(off)<br>~~ee~~<br>~~———————~~|Turn-Off delay time<br>~~———————~~|—<br>~~———————~~|73<br>~~———————~~<br>~~ie~~|90<br>~~———————~~<br>~~ie~~|||
|d(off)<br>tf<br>~~———————~~|Fall time<br>~~———————~~|—<br>~~———————~~|23<br>~~———————~~<br>~~ie~~|40<br>~~———————~~<br>~~ie~~|||
|Eon<br>~~es~~|Turn-On Switching Loss<br>|—<br>~~===~~<br>|1120<br>~~ie~~<br>~~===~~<br>|—<br>~~ie~~<br>~~=== ne~~<br>|µJ<br>~~ie~~<br>~~ne~~|IC= 24A, VCC= 400V, VGE=15V<br>RG= 10Ω, L = 0.40µH, TJ= 175°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~ne~~|
|Eoff<br>~~es~~|Turn-Off SwitchingLoss<br>|—<br>~~===~~<br>|475<br>~~===~~<br>|—<br>~~=== ne~~<br>|||
|Etotal<br>~~es~~<br>~~es~~|Total SwitchingLoss<br>~~es~~<br>|—<br>~~===~~<br>~~es~~<br>|1595<br>~~===~~<br>~~es~~<br>|—<br>~~=== ne~~<br>~~es~~<br>|||
|td(on)<br>~~es~~<br>~~es~~<br>~~rs~~|Turn-On delaytime<br>~~es~~<br>~~es~~|—<br>~~===~~<br>~~es~~<br>~~es~~|22<br>~~===~~<br>~~es~~<br>~~es~~|—<br>~~=== ne~~<br>~~es~~<br>~~es~~|ns<br>~~ne~~||
|tr<br>~~es~~<br>~~es~~<br>~~rs~~|Rise time<br>~~es~~<br>~~es~~|—<br>~~===~~<br>~~es~~<br>~~es~~|28<br>~~===~~<br>~~es~~<br>~~es~~|—<br>~~=== ne~~<br>~~es~~<br>~~es~~|||
|td(off)<br>~~es~~<br><br>~~rs~~<br>~~SS~~<br>~~—_—~~|Turn-Off delaytime<br><br>~~es~~<br>~~SS~~|—<br>~~===~~<br><br>~~es~~<br>~~SS~~|88<br>~~===~~<br><br>~~es~~|—<br>~~=== ne~~<br><br>~~es~~|||
|tf<br>~~es~~<br>~~—_—~~|Fall time<br>|—<br>~~===~~<br>|74<br>~~===~~<br>|—<br>~~=== ne~~<br>|||
|Cies<br>~~—_—=~~|Input Capacitance|—|1550|—<br>~~+~~|pF<br>~~+~~<br>~~t~~|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~+~~<br>~~——~~|
|Coes<br>~~—_—=~~|Output Capacitance|—|124|—<br>~~+~~|||
|Cres<br>~~=~~<br>~~$f~~|Reverse Transfer Capacitance<br>~~$f~~|—<br>~~$f~~|43<br>~~$f~~|—<br>~~+~~|||
|RBSOA<br>~~=~~<br>~~$f~~|Reverse Bias Safe Operating Area<br>~~$f~~|FULL SQUARE<br>~~+~~<br>~~$f~~|||~~+~~<br>~~t~~|TJ= 175°C, IC= 96A<br>VCC= 520V, Vp ≤ 650V<br>VGE= +20V to 0V<br>~~+~~<br>~~——~~|
|SCSOA<br>~~$f~~|Short Circuit Safe Operating Area<br>~~$f~~|5.5<br>~~$f~~|—<br>~~$f~~|—|µs <br>~~t~~|TJ= 150°C,VCC= 400V, Vp ≤ 650V<br>VGE= +15V to 0V<br>~~——~~|
|Erec<br>~~$f~~<br>~~—~~|Reverse RecoveryEnergyof the Diode<br>~~$f~~<br>~~ee~~|—<br>~~$f~~<br>~~ee~~|292<br>~~$f~~<br>~~ee~~|—<br>~~ee~~|µJ<br>~~t~~<br>~~ee~~|TJ= 175°C<br>VCC= 400V, IF= 24A<br>VGE= 15V,Rg= 10Ω<br> ~~——~~<br>~~ee~~|
|trr<br>~~$f~~<br>~~—~~|Diode Reverse RecoveryTime<br>~~$f~~<br>~~ee~~|—<br>~~$f~~<br>~~ee~~|170<br>~~$f~~<br>~~ee~~|—<br>~~ee~~|ns<br>~~t ~~<br>~~ee~~||
|Irr<br>~~—~~|Peak Reverse RecoveryCurrent<br>~~ee~~|—<br>~~ee~~|17<br>~~ee~~|—<br>~~ee~~|A<br>~~ee~~||



-  VCC = 80% (VCES), VGE = 20V. 

-  R θ is measured at TJ of approximately 90°C. 

-  Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

-  Maximum limits are based on statistical sample size characterization. 

-  Pulse width limited by max. junction temperature. 

 Values influenced by parasitic L and C in measurement. 

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IRGP4740DPbF/IRGP4740D-EPbF ~~[CF~~ 

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60<br>For both:<br>Duty cycle : 50%<br>Tj = 175°C<br>50<br>Tcase = 100°C<br>CT etl Gate drive as specified fill<br>Power Dissipation = 108.7W<br>40<br>a |<br>Square Wave:<br>VCC<br>30<br>I WMTTY<br>i ANS  TTT<br>20<br>Diode as specified<br>$e eS<br>aee!<br>10<br>0.1 1 10 100<br>f , Frequency ( kHz )<br>Fig. 1  - Typical Load Current vs. Frequency<br>     (Load Current = IRMS of fundamental)<br>60 250<br>50 BNE<br>40 PEN EL 200<br>150<br>30<br>PT [EN]<br>100<br>20 SeeENE<br>50<br>10<br>PEt LEN<br>0 pt} 0<br>i tA<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br> TC (°C)  TC (°C)<br>Fig. 2  - Maximum DC Collector Current vs.   Fig. 3  - Power  Dissipation vs.<br>Case Temperature  Case Temperature<br>1000 1000<br>100 aa<br>1 00<br>10µsec<br>10<br>AS] 100µsec<br>10<br>1 1msec<br>Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>Ee:eave<br>0.1 1<br>1 10 100 1000 10000 10 100 1000<br>VCE (V) VCE (V)<br>IC (A)<br>Ptot (W)<br>IC (A) IC (A)<br>Load Current  ( A )<br>**----- End of picture text -----**<br>


**Fig. 2** - Maximum DC Collector Current vs. Case Temperature 

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1000<br>1 00<br>10<br>1<br>10 100 1000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>


**Fig. 4** - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 

**Fig. 5** - Reverse Bias SOA 

TJ = 175°C; VGE = 20V 

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100<br>80<br>ify |<br>60<br>VGE = 18V<br>TIRE VGE = 15V<br>40 V GE  = 12V<br>VGE = 10V<br>VGE = 8.0V<br>20 SS<br>Tava<br>0 SVL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 6** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs 

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100<br>VGE = 18V<br>VGE = 15V<br>80 W VGE = 12V AL<br>VGE = 10V<br>60 VGE = 8.0V<br>40 aan<br>20 N-T<br>0 yana=<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 

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12<br>10<br>ICE = 12A<br>8 TE] I CE  = 24A<br>ICE = 48A<br>6 TE<br>4 |<br>2<br>|<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 10** - Typical VCE vs. VGE TJ = -40°C 

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100<br>VGE = 18V<br>VGE = 15V<br>80 HE V GE  = 12V<br>VGE = 10V<br>VGE = 8.0V<br>60<br>A<br>40<br>2/7a0<br>20<br>ff ALI |<br>0 LEA| |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 

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100<br>80 ae)<br>60<br>40 n/a -40°C<br>25°C<br>175°C<br>20 e/a<br>DAA<br>0<br>0 1 2 3<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typ. Diode Forward Voltage Drop Characteristics 

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12<br>10<br>ICE = 12A<br>8 AES I CE  = 24A<br>ICE = 48A<br>6 rE<br>4 Pitt<br>2<br>no<br>0 |<br>5 10 15 20<br> VGE (V)<br>Fig. 11  - Typical VCE vs. VGE<br>TJ = 25°C<br>VCE (V)<br>**----- End of picture text -----**<br>


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IRGP4740DPbF/IRGP4740D-EPbF<br>[CF<br>12 100<br>10<br>ety | 80 |<br>ICE = 12A<br>8 ICE = 24A<br>ICE = 48A 60<br>6 te | Ls<br>40<br>4 | FO<br>TJ = 25°C<br>2 (te 20 TJ = 175 ° C f<br>0 = 0 an<br>5 10 15 20 4 6 8 10 12 14<br> VGE (V)  VGE (V)<br>Fig. 12  - Typical VCE vs. VGE   Fig. 13  - Typ. Transfer Characteristics<br>TJ = 175°C  VCE = 50V; tp = 20µs<br>3000 1000<br>2500<br>td OFF<br>2000 100<br>tF<br>1500<br>EON td ON<br>1000 10<br>tR<br>500 E OFF<br>0 1 ELLE<br>Zo ae<br>0 10 20 30 40 50 0 10 20 30 40 50<br>IC (A) IC (A)<br>Fig. 14  - Typ. Energy Loss vs. IC Fig. 15  - Typ. Switching Time vs. IC<br>J = 175°C; L = 0.40mH; VCE = 400V, RG = 10 = 175°C; L = 0.40mH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10 = 10 Ω ; VGE = 15V GE = 15V  = 15V  TJ = 175°C; L = 0.40mH; VCE = 400V, RG = 10J = 175°C; L = 0.40mH; VCE = 400V, RG = 10 = 175°C; L = 0.40mH; VCE = 400V, RG = 10CE = 400V, RG = 10 = 400V, RG = 10G = 10 = 10 Ω ; VGE = 15V GE = 15V  = 15V<br>2400 1000<br>2000<br>1600 E ON<br>tdOFF<br>1200 100<br>Ler<br>EOFF tF<br>800<br>tR<br>400<br>tdON<br>0 << 10 EeeTLLEES<br>0 20 40 60 80 100 0 20 40 60 80 100<br>Rg ( Ω ) RG ( Ω )<br>Fig. 16  - Typ. Energy Loss vs. RG  Fig. 17  - Typ. Switching Time vs. RGG<br>TJ = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V  TJ = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V J = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V CE = 400V, ICE = 24A; VGE = 15V  = 400V, ICE = 24A; VGE = 15V CE = 24A; VGE = 15V  = 24A; VGE = 15V GE = 15V  = 15V<br>Energy (µJ)<br>VCE (V) ICE (A)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


TJ = 175°C; L = 0.40mH; VCE = 400V, RG = 10 = 175°C; L = 0.40mH; VCE = 400V, RG = 10CE = 400V, RG = 10= 400V, RG = 10G = 10 = 10 Ω ; VGE = 15V GE = 15V  = 15V 

TJ = 175°C; L = 0.40mH; VCE = 400V, RG = 10J = 175°C; L = 0.40mH; VCE = 400V, RG = 10 = 175°C; L = 0.40mH; VCE = 400V, RG = 10CE = 400V, RG = 10 = 400V, RG = 10G = 10 = 10 Ω ; VGE = 15V GE = 15V  = 15V 

**Fig. 17** - Typ. Switching Time vs. RGG TJ = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V J = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V = 175°C; L = 0.40mH; VCE = 400V, ICE = 24A; VGE = 15V CE = 400V, ICE = 24A; VGE = 15V  = 400V, ICE = 24A; VGE = 15V CE = 24A; VGE = 15V  = 24A; VGE = 15V GE = 15V  = 15V 

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17 17<br>16 R G =  10 Ω 16<br>15 eECEOREL 15<br>RG = 22 Ω<br>14 CHP 14<br>13 TAR RG = 47 Ω SSE 13<br>12 TEE 12<br>11 RG = 100 Ω 11<br>Speennn8HERE<br>10 10<br>10 15 20 25 30 35 40 45 50 0 20 40 60 80 100<br>IF (A) RG ( Ω)<br>Fig. 18  - Typ. Diode IRR  vs. IF  Fig. 19  - Typ. Diode IRR  vs. RG<br> TJ = 175°C   TJ = 175°C<br>17 2.5<br>48A<br>16<br>15 BO 2.0 22 Ω 10 Ω<br>14<br>47 Ω<br>24A<br>P| VY {| {| l Le<br>13<br>WET 1.5 100 Ω fF<br>12<br>12A<br>11<br>SAE =<br>10 A 1.0 po<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig. 20  - Typ. Diode IRR vs. diF/dt   Fig. 21  - Typ. Diode QRR vs. diF/dt<br>VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C  VCC = 400V; VGE = 15V; TJ = 175°C<br>400 21<br>18 T sc I sc<br>300<br>15<br>THE<br>200 | RG = 10 Ω eee 12<br>RG = 22 Ω<br>9<br>RG = 47 Ω<br>100<br>RG = 100 Ω 6<br>0 aati 3<br>0 10 20 30 40 50 8 10 12 14 16 18<br>IF (A) VGE (V)<br>Fig. 22  - Typ. Diode ERR vs. IF Fig. 23  - VGE vs. Short Circuit Time<br>TJ = 175°C  VCC = 400V; TC = 150°C<br>IRR (A) IRR (A)<br>IRR (A) QRR (µC)<br>Energy (µJ) Time (µs)<br>**----- End of picture text -----**<br>


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21 140<br>18 T sc I sc 120<br>15 100<br>12 80<br>9 60<br>6 40<br>3 20<br>8 10 12 14 16 18<br>VGE (V)<br>Time (µs) Current (A)<br>**----- End of picture text -----**<br>


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IRGP4740DPbF/IRGP4740D-EPbF 

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10000 16<br>14 VCES = 400V<br>Cies VCES = 300V<br>12 || y_|<br>fe Pf oy<br>1000<br>10<br>8<br>100 ; Coes 6 a<br>4 AEE<br>\ SF =<br>Cres<br>2<br>10 NECPe ee 0 AVor—<br>0 100 200 300 400 500 600 0 10 20 30 40 50<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 24  - Typ. Capacitance vs. VCE  Fig. 25  - Typical Gate Charge vs. VGE<br> VGE= 0V; f = 1MHz   ICE = 24A<br>1<br>D = 0.50<br>0.1 EEE 0.20 aeitalenillintiil Ri (°C/W) τ i (sec)<br>0.10 Silico, R 1R1 R 2R2 R 3R3 R 4 R 4 es 0.014255  0.000015<br>0.05 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 τ C τ C 0.163283  0.000127<br>0.02 Tee} | 0.257883  0.003125<br>0.01 geal Ci Ci=  = PE τ i / τ Ri i / Ri<br>0.01 0.164579  0.019104<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>2. Peak Tj = P dm x Zthjc + Tc<br>yal ctl<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 26 -   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1 D = 0.50<br>0.20<br>Ri (°C/W)  τ i (sec)<br>0.1 0.020.050.10 TC τ J τ J τ 1 τ 1 R1 R1 τ 2 τ R22 R2 R τ 33 R τ 3 3 τ R4 τ 4R4 4 τ C τ C a 0.026766  0.573978 0.655762  0.000026  0.000561 0.005131  al<br>0.01 Ci=  Ci=  τ i / τ Ri i / Ri<br>0.01 puinerees pp ORE -—- 0.344981  0.039505<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>eel ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc —<br>0.001 Beis RTO BL<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>VGE, Gate-to-Emitter Voltage (V)<br>Capacitance (pF)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 27 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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IRGP4740DPbF/IRGP4740D-EPbF 

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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>


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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

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diode clamp /<br>DUT<br>4X L<br>DC VCC<br>-5V<br>DUT DUT / VCC<br>DRIVER<br>Rg<br>RSH<br>Fig.C.T.3  - S.C. SOA Circuit  Fig.C.T.4  - Switching Loss Circuit<br>C force<br>R =  [VCC]<br>ICM<br>100K<br>D1 22K<br>C sense<br>VCC<br>DUT DUT<br>G force 0.0075µF<br>Rg<br>E sense<br>fib<br>E force<br>Fig.C.T.5  - Resistive Load Circuit  Fig.C.T.6  - BVCES Filter Circuit<br>8  www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 13, 2014<br>**----- End of picture text -----**<br>


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IRGP4740DPbF/IRGP4740D-EPbF ~~#£4x45zZzZ»»_ 777~~ 

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600 60 600 60<br>tf tr<br>500 50 500 50<br>400 40 400 40<br>TEST<br>CURRENT<br>300 ieee 30 300 | 30<br>90% ICE<br>200 20 200 20<br>10% VCE 90% ICE<br>100 10 100 10<br>oe 10% ICE He 10%ICE 10% VCE<br>0 0 0 0<br>Eoff Loss Eon Loss<br>-100 -10 -100 -10<br>-0.3 -0.05 0.2 0.45 0.7 -0.5 0 0.5 1<br>time(µs) time (µs)<br>Fig. WF1  - Typ. Turn-off Loss Waveform  Fig. WF2  - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4  @ TJ = 175°C using Fig. CT.4<br>40 600 150<br>ICE<br>QRR<br>30 500 125<br>VCE<br>20 sy tRR 400 100<br>10 hE 300 75<br>0 ft te 200 50<br>Peak<br>-10 IRR or, 100 25<br>-20 Li 0 0<br>-30 a -100 -25<br>-0.15 0.00 0.15 0.30 -5.0 0.0 5.0 10.0<br>time (µs)<br>time (µs)<br> (V)  (A)  (V)  (A)<br>VCE ICE VCE ICE<br> (A)<br>IF<br>Vce (V)<br>**----- End of picture text -----**<br>


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600 150<br>ICE<br>500 125<br>VCE<br>400 100<br>300 75<br>200 50<br>100 25<br>0 0<br>-100 -25<br>-5.0 0.0 5.0 10.0<br>time (µs)<br>Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br>


**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 

**Fig. WF4** - Typ. S.C. Waveform 

@ TJ = 150°C using Fig. CT.3 

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IRGP4740DPbF/IRGP4740D-EPbF ~~[CF~~ 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO Po  135H d<br>IN THE ASSEMBLY LINE "H"<br>_ —- 56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRGP4740DPbF/IRGP4740D-EPbF ~~[CF~~ 

## ~~ItaR~~ 

## TO-247AD Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AD Part Marking Information 

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E X A M P L E : T H IS  IS  A N  IR G P 3 0 B 1 2 0 K D -E<br>W IT H  A S S E M B L Y  P A R T  N U M B E R<br>L O T  C O D E  5 6 5 7 IN T E R N A T IO N A L dog<br>A S S E M B L E D  O N  W W  3 5 , 2 0 0 0 R E C T IF IE R<br>L O G O IRGP30B1IeaR 20KD  0 3 5 H -E |<br>IN  T H E  A S S E M B L Y  L IN E  "H "<br>5 6            5 7<br>D A T E  C O D E<br>A S S E M B L Y YE A R  0  =  2 0 0 0<br>N o te : "P " in  a s s e m b ly  lin e  p o s itio n<br>L O T  C O D E W E E K  3 5<br>in d ic a te s  "L e a d -F re e "<br>L IN E  H<br>**----- End of picture text -----**<br>


TO-247AD package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[†  ]** 

|**Qualification Information[†  ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
||TO-247AD|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Revision History**|**Revision History**|
|---|---|
|**Date**|**Comments**|
|11/13/2014|•Added IFMDiode Maximum Forward Current  = 96A with the noteon page 1.<br>•Removed notefrom switchinglosses test condition onpage 2.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRGP4740DPBF/igbt-60-a-17-v-250-w-650-to-247ac-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irgp4740dpbf/igbt-single-n-ch-650v-60a-to-247ac/dp/2617415)
---

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