# IGBT, 76 A, 1.6 V, 268 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:2424466/)

**URL**: https://novapart.co/products/IRGP4650DPBF/igbt-76-a-16-v-268-w-600-to-247ac-3-pins
**SKU**: IRGP4650DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.8500
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 268W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 76A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2424466/)

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- Industrial Motor Drive 

- Inverters 

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ULTRAFAST SOFT RECOVERY DIODE<br>C<br>C C<br>G<br>G C [E] G C [E]<br>E<br>TO-247AC TO-247AD<br>n-channel INSULATED IRGP4650DPbF  GATEBIPOLAR TRANSISTOR IRGP4650D-EP WITH<br>G C  E<br>Gate Collector Emitter<br>**----- End of picture text -----**<br>


- UPS 

- Welding 

## **Features** 

## **Benefits** 

|**Features**||**Benefits**||
|---|---|---|---|
|Low VCE(ON)and Switching Losses||High efficiency in a wide range of applications and switching<br>frequencies||
|Square RBSOA and Maximum Junction Temperature 175°C||Improved reliability due to rugged hard switching performance<br>and higherpower capability||
|Positive VCE(ON)Temperature Coefficient<br>Excellent current sharing in parallel operation<br>5μs short circuit SOA<br>Enables short circuitprotection scheme<br>~~PCa~~||||
|Lead-Free,RoHS compliant<br>Environmentallyfriendly<br>~~a~~||||
|**Base part number**<br>**Package Type**|**Form**<br>**Quantity**<br>**Standard Pack**<br>**Orderable part number**|||
|IRGP4650DPbF<br>TO-247AC|Tube<br>25<br>IRGP4650DPbF|||
|IRGP4650D-EPbF<br>TO-247AD|Tube<br>25<br>IRGP4650D-EPbF|||



**Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**||||
|---|---|---|---|
|**Absolute Maximum Ratings**|**Parameter**|**Max.**|**Units**|
|VCES<br>~~a~~<br>~~SSS~~|Collector-to-Emitter Voltage<br>~~a~~<br>~~G~~<br>~~SSS~~|600<br>~~a~~|V<br>~~a~~|
|IC@ TC= 25°C<br>~~a~~<br>~~a~~<br>~~SSS~~|Continuous Collector Current<br>~~SSS~~|76|A|
|IC@ TC= 100°C<br>~~a~~<br>~~es~~<br>~~SSS~~|Continuous Collector Current<br>~~SSS~~|50||
|ICM<br>~~a~~<br>~~es~~<br>~~SSS~~|Pulse Collector Current,VGE= 15V<br>~~©~~<br>~~SSS~~|105||
|ILM<br>~~es~~<br>~~GO~~<br>~~SSS~~|Clamped Inductive Load  Current,VGE= 20V<br>~~GO~~<br>~~©~~<br>~~SSS~~|140<br>~~GO~~||
|IF@ TC= 25°C<br>~~Qe~~<br>~~Rs~~<br>~~SSS~~|Diode Continous Forward Current<br>~~©~~<br>~~Qe~~<br>~~SSS~~|76<br>~~Qe~~||
|IF@ TC= 100°C<br>~~Rs~~<br>~~SSS~~|Diode Continous Forward Current<br>~~SSS~~|50||
|IFM<br>~~Rs~~<br>~~SSS~~|Diode Maximum Forward Current<br>~~SSS~~|140||
|VGE<br>~~SSS ~~<br>~~|~~|Continuous Gate-to-Emitter Voltage<br> ~~SSS~~<br>~~a~~<br>~~|~~|±20<br>~~a~~<br>~~|~~|V<br>~~|~~|
||Transient Gate-to-Emitter Voltage<br>~~|~~|±30<br>~~|~~||
|PD@ TC= 25°C<br>~~I~~<br>~~es~~|Emitter Voltage<br>Maximum Power Dissipation<br>~~I~~|268<br>~~I~~|W<br>~~I~~|
|PD@ TC= 100°C<br>~~I~~<br>~~es~~<br>~~——~~|Maximum Power Dissipation<br>~~I~~|134<br>~~I~~||
|TJ<br>TSTG<br>~~es~~<br>~~——~~|Operating Junction and<br>Storage Temperature Range|-55 to +175|°C|
|~~——~~|Soldering Temperature, for 10 sec.|300 (0.063 in. (1.6mm) from case)||
|~~——~~<br>~~Ge~~|Soldering Temperature, for 10 sec.<br>Mounting Torque, 6-32 or M3 Screw<br>~~Ge~~|10 lbf·in (1.1 N·m)<br>~~Ge~~|~~Ge~~|



## ��������������������������� 

**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE=0V,IC= 100μA�|
|ΔV(BR)CES/ΔTJ|TemperatureCoeff. of Breakdown Voltage|—|1.3|—|mV/°C|VGE=0V,IC= 1mA(25°C-175°C)|
|VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.60|1.90|V|IC=35A,VGE= 15V,TJ= 25°C|
|||—|1.90|—||IC=35A,VGE= 15V,TJ= 150°C|
|||—|2.00|—||IC=35A,VGE= 15V,TJ= 175°C|
|VGE(th)|Gate Threshold Voltage|4.0|—|6.5|V|VCE= VGE,IC= 1.0mA|
|ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient|—|-18|—|mV/°C|VCE =VGE, IC =1.0mA (25°C-175°C)|
|gfe|Forward Transconductance|—|25|—|S|VCE=50V,IC=35A,PW =60μs|
|ICES|Collector-to-Emitter Leakage Current|—|1.0|70|μA|VGE=0V,VCE=600V|
|||—|770|—||VGE=0V,VCE=600V,TJ= 175°C|
|VFM|Diode Forward Voltage Drop|—|2.0|3.0|V|IF=35A|
|||—|1.4|—||IF =35A, TJ =175°C|
|IGES|Gate-to-Emitter LeakageCurrent|—|—|±100|nA|VGE= ±20V|
|**Switching Characteristics @ TJ = 25°C(unless otherwise specified)**|||||||
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**|
|Qg|TotalGateCharge(turn-on)|—|69|104|nC|IC= 35A<br>VGE= 15V<br>VCC =400V|
|Qge|Gate-to-EmitterCharge(turn-on)|—|18|27|||
|Qgc|Gate-to-Collector Charge (turn-on)|—|29|44|||
|Eon|Turn-OnSwitchingLoss|—|390|508|μJ|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery �|
|Eoff|Turn-OffSwitchingLoss|—|632|753|||
|Etotal|TotalSwitchingLoss|—|1022|1261|||
|td(on)|Turn-On delaytime|—|46|56|<br>ns|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C|
|tr|Rise time|—|33|42|||
|td(off)|Turn-Off delaytime|—|105|117|||
|tf|Fall time|—|44|54|||
|Eon|Turn-OnSwitchingLoss|—|1013|—|<br>μJ|IC= 35A, VCC= 400V, VGE=15V<br>RG=10Ω, L=200μH, LS=150nH, TJ= 175°C<br>Energylosses include tail & diode reverse recovery �|
|Eoff|Turn-OffSwitchingLoss|—|929|—|||
|Etotal|Total Switching Loss|—|1942|—|||
|td(on)|Turn-On delaytime|—|43|—|<br>ns|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH<br>TJ= 175°C|
|tr|Rise time|—|35|—|||
|td(off)|Turn-Off delaytime|—|127|—|||
|tf|Fall time|—|61|—|||
|Cies|InputCapacitance|—|2113|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz|
|Coes|OutputCapacitance|—|197|—|||
|Cres|Reverse TransferCapacitance|—|65|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 140A<br>VCC= 480V, Vp�600V<br>Rg= 10Ω,VGE= +20V to0V|
|SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp�600V<br>Rg= 10Ω,VGE= +15V to0V|
|Erec|Reverse RecoveryEnergyof the Diode|—|304|—|μJ|TJ= 175°C<br>VCC= 400V, IF= 35A<br>VGE= 15V,Rg= 10Ω,L =210μH,Ls= 150nH|
|trr|Diode Reverse Recovery Time|—|120|—|ns||
|Irr|Peak Reverse Recovery Current|—|25|—|A||



## **Notes:** 

- VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10 Ω . 

- R θ is measured at TJ of approximately 90°C. 

- Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

- Pulse width limited by max. junction temperature. 

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80<br>70 m|f<br>60<br>50 Nee<br>40<br>30<br>2010 PN<br>PPL [IN] \<br>0<br>es<br>25 50 75 100 125 150 175<br> TC (°C)<br>Fig. 1  - Maximum DC Collector Current vs.<br>Case Temperature<br>1000<br>100<br>100μsec<br>10μsec<br>10 aE, Sa) 1msec nell<br>aaa ee ears<br>DC<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>MEFS:<br>1 10 100 1000<br>VCE (V)<br>Fig. 3  - Forward SOA<br>TC = 25°C, TJ ≤  175°C; VGE =15V<br>140<br>VGE = 18V<br>120 nie= V GE  = 15V<br>VGE = 12V<br>100 ay/4 V GE  = 10V<br>VGE = 8.0V<br>80<br>WZ<br>60<br>| ff eT<br>40 |-Vy | |<br>20<br>fA<br>0 ALE [T] T<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>IC (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤ 60μs 

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300<br>250<br>200<br>~<br>150<br>100<br>CEPR<br>50 N\<br>0 ERAN<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>


**Fig. 2** - Power  Dissipation vs. Case Temperature 

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1000<br>100<br>eal<br>po |<br>10<br>1<br>peep ee<br>10 100 1000<br>VCE (V)<br>Fig. 4  - Reverse Bias SOA<br>TJ = 175°C; VGE =20V<br>140<br>VGE = 18V<br>120 | Je VGE = 15V<br>VGE = 12V<br>100 | [A=] VGE = 10V<br>VGE = 8.0V<br>80<br>1<br>60<br>| et<br>40 |_Vyil/|<br>20<br>|<br>yt<br>0 7aa| |<br>0 2 4 6 8 10<br> VCE (V)<br>IC (A)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤ 60μs Submit Datasheet Feedback November 

November 17, 2014 

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140<br>VGE = 18V<br>120 V GE  = 15V JA<br>VGE = 12V<br>100 V GE  = 10V<br>| |<br>VGE = 8.0V<br>80<br>60<br>TKS<br>40<br>Aw<br>20<br>zane<br>0<br>(AA | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤ 60μs 

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20<br>18 PAT Ut<br>|<br>16 PJ [tt]<br>14 2<br>12 | lt I CE  = 18A<br>10 aaa ICE = 35A<br>8 | ob I CE  = 70A<br>6<br>4 iata a a<br>2 a aa<br>Pr<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 9  - Typical VCE vs. VGE<br>TJ = -40°C<br>20<br>18<br>16 Th<br>ee<br>14<br>12<br>Pye ICE = 18A<br>10<br>ICE = 35A<br>8 I CE  = 70A<br>6 mazeree<br>4<br>2 te<br>a<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 11** - Typical VCE vs. VGE TJ = 175°C 

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140<br>120 ie<br>100<br>pf<br>-40°C<br>80 25°C<br>175°C<br>60<br>Ay<br>40<br>es ee<br>20<br>s/o<br>0<br>PAY|<br>0.0 1.0 2.0 3.0 4.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs 

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20<br>18 |<br>1<br>16 itt<br>1<br>14<br>12 1<br>ICE = 18A<br>10 | [tt] I CE  = 35A<br>8 nip| ICE = 70A<br>6<br>mn62<br>4<br>id aa<br>2 PLR<br>eee<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 10  - Typical VCE vs. VGE<br>TJ = 25°C<br>140<br>120<br>SEREERD/2<br>TJ = 25°C<br>100 tt<br>80<br>T VJ J = 175°C<br>60<br>Sanne )0/4 40 00<br>40<br>20 San7 Ann<br>titi<br>0 ES74RRREEE<br>4 5 6 7 8 9 10 11 12 13 14<br> VGE, Gate-to-Emitter Voltage (V)<br>VCE (V)<br>IC, Collector-to-Emitter Current  (A)<br>**----- End of picture text -----**<br>


**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 60μs 

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4000<br>3500 TILL<br>3000<br>a /<br>2500<br>een EON 4<br>2000<br>1500 | f|<br>EOFF<br>1000 Oh<br>500 4a<br>0 er<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br>


**Fig. 13** - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V 

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1000<br>SS<br>P+ Pt<br>td OFF<br>PF<br>100<br>tF<br>SEBSEPP<br>SS oe<br>tdON<br>pT<br>tR<br>10 Pritt ttt<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


**Fig. 14** - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V 

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3000 1000<br>2500 | | | pp<br>EON<br>2000 Ue a tdOFF<br>wa pt<br>EOFF 100 |<br>tF<br>1500<br>tdON —$S—_<br>1000 V4 tR | | |<br>J a<br> 7 pp<br>500 KL tL 10 tt<br>0 25 50 75 100 0 10 20 30 40 50<br>Rg ( Ω ) RG ( Ω )<br>Energy (μJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


**Fig. 15** - Typ. Energy Loss vs. RG 

TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V 

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35<br>RG = 10 Ω<br>30<br>RQREEE<br>25 R G =  22 Ω PT yf<br>20 RG = 47 Ω =<br>=<br>a<br>15 Pr<br>RG = 100 Ω<br>TLL<br>10<br>10 20 30 40 50 60 70<br>IF (A)<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C 

**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V 

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26<br>24<br>22 At | ff<br>Rw<br>20<br>Nee<br>Nee<br>18 aawe<br>16 NX<br>14 Pt} pé<br>0 20 40 60 80 100<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C 

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26<br>24<br>| | ere<br>22<br>ae<br>20<br>|A | |<br>18<br>Yi | | |<br>16 /| | | ft<br>14 ye} | | ff<br>200 300 400 500 600 700<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C 

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400<br>RG = 10 Ω<br>350<br>Pt | |<br>300 RG = 22 Ω<br>| | [E+ +<br>250<br>Pannen<br>RG = 47 Ω<br>200<br>-brit lt Ty<br>150 = RG = 100 Ω<br>Ean<br>100<br>10 20 30 40 50 60 70<br>roadiis<br>IF (A)<br>Fig. 21  - Typ. Diode ERR vs. IF<br>TJ = 175°C<br>10000<br>Iii) Cies<br>1000<br>ee<br>Pp fF<br>KF<br>100 Coes<br>Cres<br>10 SSSEE)ed ee esedee ee<br>0 100 200 300 400 500<br>VCE (V)<br>Energy (μJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 

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2500<br>2250<br>itty 10 Ω<br>2000 35A<br>70A<br> 22 Ω<br>1750 hea<br>AA \<br> 47 Ω<br>18A<br>1500<br>MA ST<br>100 Ω<br>1250 A<br>1000 PrL L i L<br>100 200 300 400 500 600 700 800 900<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig. 20** - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 

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20 300<br>Isc<br>15 P| | Yl 225<br>Tsc<br>7<br>10 150<br>MZ<br>5 rN 75<br>0 aaa 0<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 22  - VGE vs. Short Circuit Time<br>VCC = 400V; TC = 25°C<br>16<br>14 V CES = 400V<br>VCES = 300V<br>12 Fly<br>10 Pp LL We<br>8 ee<br>TEL<br>6<br>4<br>2<br>0 0 A nnie<br>0 10 20 30 40 50 60 70<br>Q G, Total Gate Charge (nC)<br>Time (μs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br>


**Fig. 24** - Typical Gate Charge vs. VGE ICE = 35A; L = 740μH 

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1<br>a er<br>D = 0.50<br>eta TT TT TTI<br>= anil mmniiill<br>0.20<br>0.1 Se ee en ati el<br>0.10<br>a a ne as? a ee eee eee<br>elar 0.05 τ J τ Jem J  cme R 1R1 oie R 2R2 den R 3R3 R 4 R4 τ C τ Ri 0.01041   0.000006(°C/W)  τ i (sec) CH LH<br>0.01 — 0.01 0.02 Coeee)TI | τ 1 Ci=  τ Fob 1 Ci τ i / Rii / Ri τ 2 τ 2 | τ 3 τ 3 τ 4 τ 4 0.15911    0.23643   0.0020350.15465    0.000142 0.013806 i l<br>Pe oe<br>| ee Notes: 0 ee eeee<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>LZ ( THERMAL RESPONSE ) 00 ee Bani<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Gill Ne ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25.   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>(OO 0 0 OO OO OC OG<br>1<br>Se<br>D = 0.50<br>0.20 re<br>0.1 mn 0.10 a > gl |<br>0.05 R1R1 R2R2 R3R3 R4R4 Ri (°C/W)     τ i (sec)<br>0.02 τ J τ J τ C τ 0.01716   0.000031<br>0.01 Cc 0.01 rr τ 1 τ se 1 τ 2 ee τ 2 τ 3 τ 3 τ 4 τ 4 0.35875    0.41334   0.004192 0.000517<br>Se ee TE PT<br>a a oY Ci=  Ci τ i / Ri i / Ri a 0.20121    0.024392<br>Notes:<br>0.001 Per mm<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>= ( THERMAL RESPONSE ) en |<br>0.0001 PE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

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4X<br>DC VCC<br>DUT<br>**----- End of picture text -----**<br>


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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.2** - RBSOA Circuit 

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diode clamp /<br>DUT<br>L<br>- ) |+<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>:<br>Rg<br>**----- End of picture text -----**<br>


SCSOA 

**Fig.C.T.3** - S.C. SOA Circuit 

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**----- Start of picture text -----**<br>
R = [VCC]<br>ICM<br>VCC<br>DUT<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.5** - Resistive Load Circuit 

**Fig.C.T.4** - Switching Loss Circuit 

**==> picture [235 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075μF<br>E sense<br>E force<br>**----- End of picture text -----**<br>


**Fig.C.T.6** - BVCES Filter Circuit 

**==> picture [510 x 608] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 60 600 60<br>TEST<br>tf CURRENT<br>500 50 500 50<br>tr<br>400 40 400 40<br>90% ICE<br>300 —— 30 300 iE tele 30<br>90% test<br>current<br>200 20 200 20<br>5% VCE 10% test  5% V CE<br>100 Ty 10 100 = 10<br>2 5% ICE current<br>0 0 0 0<br>Eon<br>i Eoff Loss —— Loss<br>-100 -10 -100 -10<br>-0.5 0 0.5 1 1.5 2 6.4 6.6 6.8 7 7.2<br>time(μs) time (μs)<br>Fig. WF1  - Typ. Turn-off Loss Waveform Fig. WF2  - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4<br>40 700 350<br>ICE<br>QRR 600 300<br>30<br>tRR 500 rm. 250<br>20 ren a<br>400 200<br>10<br>FP |} VCE<br>300 150<br>0<br>200 100<br>10%<br>-10 Peak<br>Peak<br>IRR IRR 100 50<br>AS HP<br>-20<br>0 0<br>-30 -100 | -50<br>-0.3 -0.2 -0.1 0 0.1 0.2 -4.5 0.5 5.5 10.5<br>time (μS) Time (uS)<br> (V)  (A)  (V)  (A)<br>VCE ICE VCE ICE<br> (V)F  (A)<br>V Vce (V) ICE<br>**----- End of picture text -----**<br>


**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 

**Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 

EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" 

Note: "P" in assembly line position indicates "Lead-Free" 

**==> picture [269 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFPE30<br>LOGO  135H<br>56           57<br>= DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

**==> picture [461 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRGP30B120KD-E<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL DO €<br>ASSEMBLED ON WW 35, 2000 RECTIFIER<br>LOGO | IRGP30B1 20KD  035H -E |<br>IN THE ASSEMBLY LINE "H"<br>| IR 56           57<br>DATE CODE<br>ASSEMBLY YEAR 0 =  2000<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AD package is not recommended for Surface Mount Application. 

## **Qualification Information[†]** 

|**Qualification Informationualification Information[†]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per International Rectifier’s internal guidelines)||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
||TO-247AD|N/A|
|**RoHS Compliant**|Yes||



† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. 

## **Revision History** 

|**Revision Historyy**||||
|---|---|---|---|
|**Date**|||**Comments**|
|11/17/2014|•Added note|Added note<br>®|IFMDiode Maximum Forward Current on page 1.|
||•Added note|Added note|switchinglosses test condition onpage 2.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRGP4650DPBF/igbt-76-a-16-v-268-w-600-to-247ac-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irgp4650dpbf/igbt-single-600v-76a-to-247ac/dp/2424466)
---

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