# IGBT, 96 A, 1.65 V, 330 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:1857385/)

**URL**: https://novapart.co/products/IRGP4068DPBF/igbt-96-a-165-v-330-w-600-to-247ac-3-pins
**SKU**: IRGP4068DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €6.2300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 96A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1857385/)

## _**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS**_ 

## IRGP4068DPbF IRGP4068D-EPbF 

## **Features** 

- Low VCE (ON) Trench IGBT Technology 

- Low Switching Losses 

- Maximum Junction temperature 175 °C 

- 5 μS short circuit SOA 

- Square RBSOA 

- 100% of the parts tested for ILM 

- Positive VCE (ON) Temperature co-efficient 

- Ultra-low VF Hyperfast Diode 

- Tight parameter distribution 

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C<br>VCES = 600V<br>IC = 48A, TC = 100°C<br>G tSC ≥  5μs, TJ(max) = 175°C<br>E VCE(on) typ. = 1.65V<br>n-channel<br>**----- End of picture text -----**<br>


- Lead Free Package 

## **Benefits** 

- Device optimized for induction heating and soft switching applications 

- High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF 

- Rugged transient Performance for increased reliability 

- Excellent Current sharing in parallel operation 

- Low EMI 

C C[E] G[C] G[C E] TO-247AC TO-247AD IRGP4068DPbF IRGP4068D-EPbF **G C E** Gate Collector Emitter 

Gate 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES|Collector-to-Emitter Voltage<br>~~=~~|600<br>~~=~~|V<br>~~=~~|
|IC@ TC =25°C|Continuous Collector Current<br>~~=~~|96<br>48<br>144<br>192<br>8.0<br>175<br>100<br>~~=~~<br>~~a~~<br>~~=~~<br>~~—~~<br>~~LC~~<br>~~a~~<br>~~TO~~<br>~~LO~~|A<br>~~=~~<br>~~a~~<br>~~=~~|
|IC @TC= 100°C|ContinuousCollectorCurrent<br>~~a~~|||
|ICM|Pulse Collector Current,VGE= 15V<br>~~=~~|||
|ILM|Clamped Inductive Load  Current,VGE= 20V<br>~~LC~~|||
|IF @TC= 160°C|Diode Continous Forward Current<br>~~a~~|||
|IFSM|Diode Non Repetitive Peak Surge Current @ TJ= 25°C<br>~~TO~~|||
|IFRM@Tc = 100°C|Diode Repetitive Peak Forward Current at tp=10μs<br>~~LO~~|||
|VGE|Continuous Gate-to-Emitter Voltage<br>~~LO~~<br>~~eee~~<br>~~ee~~|±20<br>±30<br>~~LO~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
||TransientGate-to-Emitter Voltage<br>~~ee~~<br>~~es ee~~|||
|PD@ TC =25°C|Maximum Power Dissipation<br>~~ee~~<br>~~es ee~~|330<br>170<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|W<br>~~ee~~|
|PD@ TC =100°C<br>~~TT~~|Maximum Power Dissipation<br>~~es ee~~<br>~~TT~~|||
|TJ<br>TSTG<br>~~TT~~|Operating Junction and<br>Storage Temperature Range<br>~~es ee~~<br>~~ee~~<br>~~TT~~|-55 to +175<br>300(0.063 in.(1.6mm)from case)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ON~~<br>~~-nr-n-.-"~~|°C|
|~~TT~~|SolderingTemperature,for 10 sec.<br>~~TTON~~|||
|~~TT~~|Mounting Torque, 6-32 or M3 Screw<br>~~TTON~~<br>~~IKE~~|10 lbf·in (1.1 N·m)<br>~~ee~~<br>~~ON~~<br>~~-nr-n-.-"~~<br>~~IKE~~|~~IKE~~|



## **Thermal Resistance** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC (IGBT)|Thermal Resistance Junction-to-Case-(each IGBT)|–––|–––|0.45<br>2.0<br>–––<br>40|°C/W|
|RθJC (Diode)|Thermal Resistance Junction-to-Case-(each Diode)|–––|–––|||
|RθCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.24|||
|RθJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|–––|||



www.irf.com 

1 

07/27/09 

## IRGP4068DPbF/IRGP4068D-EPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|V(BR)CES<br>ΔV(BR)CES/ΔTJ|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units        Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V,IC= 100μA<br>CT6<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.30<br>—<br>V/°C VGE= 0V,IC= 1mA(25°C-175°C)<br>CT6<br>—<br>1.65<br>2.14<br>IC= 48A,VGE= 15V,TJ= 25°C<br>4,5,6<br>~~a~~<br>~~DD I CO~~<br>~~GO~~<br>~~ID IDOD~~<br>~~GO~~<br>~~OD GO GO~~<br>~~a~~|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units        Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V,IC= 100μA<br>CT6<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.30<br>—<br>V/°C VGE= 0V,IC= 1mA(25°C-175°C)<br>CT6<br>—<br>1.65<br>2.14<br>IC= 48A,VGE= 15V,TJ= 25°C<br>4,5,6<br>~~a~~<br>~~DD I CO~~<br>~~GO~~<br>~~ID IDOD~~<br>~~GO~~<br>~~OD GO GO~~<br>~~a~~|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units        Conditions**<br>**Ref.Fig**<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V,IC= 100μA<br>CT6<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.30<br>—<br>V/°C VGE= 0V,IC= 1mA(25°C-175°C)<br>CT6<br>—<br>1.65<br>2.14<br>IC= 48A,VGE= 15V,TJ= 25°C<br>4,5,6<br>~~a~~<br>~~DD I CO~~<br>~~GO~~<br>~~ID IDOD~~<br>~~GO~~<br>~~OD GO GO~~<br>~~a~~|
|---|---|---|---|
|VCE(on)|Collector-to-Emitter Saturation Voltage<br>—<br>2.0<br>—<br>V<br>~~PT~~|IC= 48A,VGE= 15V,TJ= 150°C|8,9,10|
|VGE(th)<br>gfe<br>ICES|—<br>2.05<br>—<br>IC= 48A,VGE= 15V,TJ= 175°C<br>Gate Threshold Voltage<br>4.0<br>—<br>6.5<br>V<br>VCE= VGE,IC= 1.4mA<br>8,9,10,11,20<br>Forward Transconductance<br>—<br>32<br>—<br>S<br>VCE= 50V,IC= 48A,PW = 80μs<br>Collector-to-Emitter Leakage Current<br>—<br>1.0<br>150<br>μA<br>VGE= 0V,VCE= 600V<br>—<br>450<br>1000<br>VGE= 0V,VCE= 600V,TJ= 175°C<br>~~PT~~<br>~~GO~~<br>~~GO~~<br>~~GO GO~~<br>~~CP~~<br>~~rrrrrrrr———.C C ss |~~<br>~~Se~~<br>~~PT~~|||
|VFM<br>IGES|Diode Forward Voltage Drop<br>—<br>0.96<br>1.05<br>V<br>IF= 8.0A<br>7<br>—<br>0.81<br>0.86<br>IF= 8.0A,TJ= 150°C<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>~~ES~~<br>~~a~~<br>~~a~~<br>~~GD IDONGO~~|||
|**Switching Characteristics @ T**|**Characteristics @ TJ = 25°C(unless otherwise specified)**|||
|Qg<br>Qge|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>Total Gate Charge(turn-on)<br>—<br>95<br>140<br>Gate-to-Emitter Charge(turn-on)<br>—<br>28<br>42<br>nC<br>~~aee~~|IC= 48A<br>VGE= 15V<br>**Conditions**|**Ref.Fig**<br>18<br>CT1|
|Qgc|Gate-to-Collector Charge(turn-on)<br>—<br>35<br>53<br>~~ee~~|VCC= 400V||
|||IC= 48A, VCC= 400V, VGE= 15V||
|Eoff|Turn-Off Switching Loss<br>—<br>1275<br>1481<br>μJ|RG= 10Ω, L = 200μH,TJ= 25°C|CT4|
|||Energylosses include tail||
|td(off)|Turn-Off delaytime<br>—<br>145<br>176<br>ns|IC= 48A, VCC= 400V, VGE= 15V||
|tf|Fall time<br>—<br>35<br>46<br>~~ee~~|RG= 10Ω,L = 200μH,TJ= 25°C||
|||IC= 48A, VCC= 400V, VGE= 15V||
|Eoff|Turn-Off Switching Loss<br>—<br>1585<br>—<br>μJ|RG= 10Ω, L = 200μH,TJ= 175°C|CT4|
|||Energylosses include tail||
|td(off)|Turn-Off delaytime<br>—<br>165<br>—<br>ns|IC= 48A, VCC= 400V, VGE= 15V|WF1|
|tf|Fall time<br>—<br>45<br>—<br>~~ee~~|RG=10Ω,L=200μH,TJ= 175°C||
|Cies|Input Capacitance<br>—<br>3025<br>—<br>~~a~~|VGE= 0V|17|
|Coes|Output Capacitance<br>—<br>245<br>—<br>pF<br>~~ee~~|VCC= 30V||
|Cres|Reverse Transfer Capacitance<br>—<br>90<br>—<br>~~ee~~|f = 1.0Mhz||
|||TJ= 175°C, IC= 192A|3|
|RBSOA|Reverse Bias Safe Operating Area<br>FULL SQUARE|VCC= 480V, Vp =600V|CT2|
|||Rg= 10Ω,VGE= +20V to 0V||
|SCSOA|Short Circuit Safe Operating Area<br>5<br>—<br>—<br>μs|VCC= 400V, Vp =600V|16, CT3|
|||Rg= 10Ω,VGE= +15V to 0V|WF2|



## **Notes:** 

VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10 Ω . 

Pulse width limited by max. junction temperature. 

Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

fsw = 20KHz, refer to figure 19. 

Sinusoidal half wave, t=10ms. 

www.irf.com 

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International IRGP4068DPbF/IRGP4068D-EPbF<br>TOR Rectifier<br>10090 ee 350 =<br>300<br>80<br>70 rE ALLLLL, 250 \<br>NE |  PN<br>60<br>50 Pt+NtN Py 200 PENEE<br>40 TPE KELL, 150 PP EINE EE<br>30<br>TINE 100 PT LIN EL<br>20<br>See eNee 50 Pie LIN LI<br>10 TFL ELN TL<br>0 TOE ELI 0 Pit} EEN<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br> TC (°C)  TC (°C)<br>Ptot (W)<br>IC (A)<br>**----- End of picture text -----**<br>


**Fig. 1** - Maximum DC Collector Current vs. Case Temperature 

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1000<br>a a<br>100<br>10<br>Pt<br>pe<br>1 ee<br>10 100 1000<br>VCE (V)<br>Fig. 3  - Reverse Bias SOA<br>TJ = 175°C; VGE = 20V<br>200<br>180 Ty<br>160 P| RSS<br>VGE = 18V<br>140 VGE = 15V<br>VGE = 12V<br>120<br>VGE = 10V<br>HAS VGE = 8.0V<br>100<br>80 re Zt 4}<br>60 IZ Tt _t<br>40 a<br>20 7 (ae<br>0 STr_L_f_<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 

**Fig. 2** - Power  Dissipation vs. Case Temperature 

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200<br>180<br>160 L—-< VGE = 18V<br>VGE = 15V<br>140<br>VGE = 12V<br>120 VGE = 10V<br>VGE = 8.0V<br>100<br>80<br>60 htt +<br>40<br>20 ss<br>0 (AAS SE<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 4** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 

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200<br>180 VGE = 18V T7711<br>VGE = 15V<br>160 VGE = 12V Aa<br>VGE = 10V<br>140<br>VGE = 8.0V<br>120<br>eS<br>100<br>80 y/o<br>60 WAS<br>40 n/a<br>20 2<br>0 PAL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 6** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80μs 

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## IRGP4068DPbF/IRGP4068D-EPbF 

**Fig. 7** - Typ. Diode Forward Voltage Drop Characteristics 

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2018 PFi ttf<br>161412 |i| | I CE  = 24A<br>10 mie ICE = 48A<br>86 |nineiE I CE  = 96A<br>4 a a<br>2 PLAS<br>0 es ee<br>5 10 15 20<br> VGE (V)<br>Fig. 9  - Typical VCE vs. VGE<br>TJ = 25°C<br>200<br>180<br>as TJ = 25°C<br>160 T = 175°C<br>J<br>140 po<br>120<br>100 es e/a<br>80<br>a<br>60 a ee (ee<br>40 oe so<br>20<br>0 FT—EOPa<br>0 5 10 15<br> VGE (V)<br>VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 11** - Typ. Transfer Characteristics VCE = 50V; tp = 10μs 

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2018 eeee<br>16<br>14<br>a<br>12 | I  = 24A<br>CE<br>10 ICE = 48A<br>8 I CE  = 96A<br>6<br>4<br>2 ee<br>0<br>a<br>5 10 15 20<br> VGE (V)<br>Fig. 8  - Typical VCE vs. VGE<br>TJ = -40°C<br>2018 neee<br>16 a<br>1412 Fett I CE  = 24A<br>10 man) ICE = 48A<br>86 |triLo I CE  = 96A<br>4 |a eee | til<br>2 ee<br>0 fe...eeee<br>5 10 15 20<br> VGE (V)<br>Fig. 10  - Typical VCE vs. VGE<br>TJ = 175°C<br>6000<br>5000 Tf<br>4000 PO EOFF<br>3000 /<br>2000 n/a<br>1000 pfeT<br>0<br>0 25 50 75 100<br>IC (A)<br>Energy (μJ)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 12** - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V 

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## IRGP4068DPbF/IRGP4068D-EPbF 

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IGR R 1000 ectifier<br>a<br>td OFF<br>fo -=<br>100<br>|<br>a<br>tF<br>eeee ee e es ee ee<br>ee<br>10<br>0 20 40 60 80 100<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


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5000<br>4500<br>EOFF<br>4000<br>3500<br>3000<br>2500<br>2000<br>1500<br>1000<br>0 25 50 75 100 125<br>Energy (μJ)<br>**----- End of picture text -----**<br>


Rg ( Ω ) 

**Fig. 14** - Typ. Energy Loss vs. RG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V 

**Fig. 13** - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V 

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1000<br>td OFF<br>TT A<br>eae<br>Tt<br>100<br>tF<br>ae<br>tet |<br>ee<br>ee<br>10<br>0 25 50 75 100 125<br>RG ( Ω )<br>Fig. 15  - Typ. Switching Time vs. RGG<br> = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE CE = 400V, ICE = 48A; VGE = 400V, ICE = 48A; VGE CE = 48A; VGE = 48A; VGE GE = 15V<br>10000<br>Cies<br>===<br>—}—}—<br>1000<br>a<br>Coes<br>Nea<br>100<br>A —<br>Cres<br>ee—— a<br>10<br>0 20 40 60 80 100<br>VCE (V)<br>Swiching Time (ns)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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18 400<br>16 350<br>ena Tsc<br>Isc<br>14 TN IAL 300<br>12 250<br>ae<br>10 200<br>TTX Ll<br>8 150<br>a<br>64 NeeFf| BI 10050<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 16  - VGE vs. Short Circuit<br> VCC = 400V; TC = 25°C<br>16<br>14 po VCES = 300V Lye<br>VCES = 400V<br>12<br>_ Jy<br>10 a a<br>8<br>fo<br>6<br>4 fi<br>2 fifoj|| |<br>0<br>| |<br>0 25 50 75 100<br>Q G, Total Gate Charge (nC)<br>Time (μs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br>


**Fig. 15** - Typ. Switching Time vs. RGG TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE CE = 400V, ICE = 48A; VGE = 400V, ICE = 48A; VGE CE = 48A; VGE = 48A; VGE GE = 15V 

**Fig. 18** - Typical Gate Charge vs. VGE ICE = 48A; L = 600μH 

**Fig. 17** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 

www.irf.com 

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## IRGP4068DPbF/IRGP4068D-EPbF 

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160 1.0<br>a SJ IC = 1.4mA<br>140 D=0.1<br>PASSTE 0.9<br>120 OOPNaPNaa D=0.2=0.20.2 TE 0.8 ~— aN .<br>100<br>80 SFRKAEAA D=0.5 0.7 CCPNCE<br>a \<br>60 es ee<br>Square Pulse,quare Pulse,uare Pulse, sx 0.6<br>f = 20KHz<br>40 D = t/T<br>5 9 ONNeate 0.5<br>20 a t PENA<br>0 2 T = 50us PENSEBNSEBN 0.4 CEEEee<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Case Temperature (°C) TJ , Temperature (°C)<br>  Maximum Diode Repetitive Forward Fig 20.   Typical Gate Threshold Voltage<br>Peak Current vs. Case Temperature (Normalized) vs. Junction Temperature<br>1<br>a ee eee ee eee eee ___...____.__._.__.._..<br>a | ee ee nn eee<br>D = 0.50<br>Tamme)CTI<br>0.1 eet 0.20<br>Sl= 0.05 0.02 0.10 TeyArr ppp τ J τ J τ 1 τ 1 R 1 R1 τ 2 τ R 2 | 2 R2 R τ 33 R τ 3 3 τ R 4 τ 4 R 4 4 | τ C τ |——} Ri (0.0248     0.0000140.0652     0.000050 0.1537     0.001041 °C/W)     τ i (sec)<br>0.01<br>Sea 0.01 a i Ci=  eee Ci τ i / Rii / Ri 0.2065     0.013663<br>| | | SINGLE PULSE a Notes: ee<br>AV ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 ee<br>2. Peak Tj = P dm x Zthjc + Tc<br>eal i PECEELTee annl |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 21.   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1 a D = 0.50<br>0.20<br>Sn 0.10 ETI a ea|<br>0.1 0.05<br>0.01 cep— 0.020.01 (ee τ J τ J τ 1 τ 1 R1R1 τ 2 τ R22R2 R τ 33R τ 33 τ R4 τ 4R4 4 τ C τ Ri  i111 0.0400     0.000030 0.7532     0.000717 0.8317     0.004860(°C/W om )  τ i (sec)<br>email TT TA ——I<br>Sei Ci= Ci τ i / Rii / Ri a 0.3766     0.036590<br>SINGLE PULSE<br>0.001<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>PEP il<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>VGE(th), Gate Threshold Voltage (Normalized)<br>Thermal Response ( Z thJC ) °C/W<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


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160<br>a<br>140 D=0.1<br>PASSTE<br>120<br>OOPNaPNaa<br>D=0.2=0.20.2<br>100<br>D=0.5<br>80 SFRKAEAA<br>a \<br>60 es ee<br>Square Pulse,quare Pulse,uare Pulse, sx<br>f = 20KHz<br>40 D = t/T<br>5 9 NeateONNeate<br>20 a t PENA<br>T = 50us<br>0 2 PENSEBNSEBN<br>25 50 75 100 125 150 175<br>Repetitive Peak Current (A)<br>**----- End of picture text -----**<br>


**Fig 19.** Maximum Diode Repetitive Forward Peak Current vs. Case Temperature 

**Fig. 22.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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## IRGP4068DPbF/IRGP4068D-EPbF 

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L<br>DUO<br>><br>80 V<br>DUT<br>480V<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

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DIODE CLAMP /<br>DUT<br>L<br>><br>- 5V<br>DUT /<br>VCC<br>DRIVER<br>I Rg |<br>**----- End of picture text -----**<br>


**Fig.C.T.3** - S.C. SOA Circuit 

**Fig.C.T.4** - Switching Loss Circuit 

**==> picture [206 x 138] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCC<br>R =<br>ICM<br>DUT<br>VCC<br>Rg<br>**----- End of picture text -----**<br>


**==> picture [225 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
C force<br>400μH<br>D1 10K<br>C sense<br>G force DUT 0.0075μ<br>E sense<br>E force<br>**----- End of picture text -----**<br>


**Fig.C.T.5** - Resistive Load Circuit 

**Fig.C.T.6** - BVCES Filter Circuit 

www.irf.com 

7 

## IRGP4068DPbF/IRGP4068D-EPbF 

**==> picture [202 x 262] intentionally omitted <==**

**----- Start of picture text -----**<br>
700 140<br>600 120<br>500 100<br>400 80<br>tf<br>300 oe eee 60<br>90% ICE<br>200 40<br>5% VCE<br>100 20<br>5% ICE<br>0 aed eee 0<br>EOFF Loss<br>-100 -20<br>-0.40 0.10 0.60 1.10<br>Time(µs)<br> (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 

**==> picture [211 x 263] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 600<br>500 500<br>ICE<br>VCE<br>400 i i | —" 4 7 400<br>300 300<br>™<br>200 200<br>100 100<br>0 0<br>ar<br>-100 -100<br>-5.00 0.00 5.00 10.00<br>time (µS)<br> (V)  (A)<br>VCE ICE<br>**----- End of picture text -----**<br>


**Fig. WF2** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 

www.irf.com 

8 

## IRGP4068DPbF/IRGP4068D-EPbF 

TO-247AC package is not recommended for Surface Mount Application. 

www.irf.com 

9 

## IRGP4068DPbF/IRGP4068D-EPbF TO-247AD Package Outline 

TO-247AD package is not recommended for Surface Mount Application. 

Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/09 

www.irf.com 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRGP4068DPBF/igbt-96-a-165-v-330-w-600-to-247ac-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irgp4068dpbf/igbt-n-ch-diode-600v-96a-to-247ac/dp/1857385)
---

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