# IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 Pins

![Product image](https://novapart.co/image/farnell:1013530/)

**URL**: https://novapart.co/products/IRGIB15B60KD1P/igbt-19-a-22-v-52-w-600-to-220fp-3-pins
**SKU**: IRGIB15B60KD1P
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 52W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220FP |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 19A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013530/)

PD- 94914 

## IRGIB15B60KD1P 

## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 

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C<br>VCES = 600V<br>IC = 12A, TC=100°C<br>G<br>tsc > 10µs, TJ=150°C<br>E<br>n-channel VCE(on) typ. = 1.80V<br>**----- End of picture text -----**<br>


## **Features** 

- Low VCE (on) Non Punch Through IGBT Technology. 

- Low Diode VF. 

- 10µs Short Circuit Capability. 

- Square RBSOA. 

- Ultrasoft Diode Reverse Recovery Characteristics. 

- Positive VCE (on) Temperature Coefficient. 

- Maximum Junction Temperature Rated at 175°C 

- Lead-Free 

## **Benefits** 

- Benchmark Efficiency for Motor Control. 

- Rugged Transient Performance. 

- Low EMI. 

- Excellent Current Sharing in Parallel Operation. 

## TO-220 **Absolute Maximum Ratings** Full-Pak 

|~~CO~~|**Parameter**<br>~~CO~~|**Max.**<br>~~CO~~|**Units**<br>~~CO~~|
|---|---|---|---|
|VCES<br>~~CO~~<br>~~a~~|Collector-to-Emitter Voltage<br>~~CO~~<br>~~a~~|600<br>~~CO~~<br>~~a~~|V<br>~~CO~~<br>~~a~~|
|IC@ TC= 25°C<br>~~=~~|Continuous Collector Current<br>~~=~~|19<br>~~=~~|A<br>~~=~~|
|IC@ TC= 100°C<br>~~=~~<br>~~Ca~~|Continuous Collector Current<br>~~=~~<br>~~Ca~~|12<br>~~=~~<br>~~Ca~~||
|ICM<br>~~=~~<br>~~ees~~|Pulse Collector Current(Ref.Fig.C.T.5)<br>~~=~~<br>~~ees~~|38<br>~~=~~<br>~~ees~~||
|ILM<br>~~=~~<br>~~ees~~<br>~~nT~~|Clamped Inductive Load current<br>~~=~~<br>~~ees~~<br>~~nT~~|38<br>~~=~~<br>~~ees~~<br>~~nT~~||
|IF@ TC= 25°C<br>~~=~~<br>~~ees~~|Diode Continuous Forward Current<br>~~=~~<br>~~ees~~|19<br>~~=~~<br>~~ees~~||
|IF@ TC= 100°C<br>~~=~~<br>~~ees~~<br>~~Ca~~|Diode Continuous Forward Current<br>~~=~~<br>~~ees~~<br>~~Ca~~|12<br>~~=~~<br>~~ees~~<br>~~Ca~~||
|IFM<br>~~=~~|Diode Maximum Forward Current<br>~~=~~|38<br>~~=~~||
|VISOL<br>~~=~~<br>~~Ca~~|RMS Isolation Voltage,Terminal to Case,t = 1 min<br>~~=~~<br>~~Ca~~|2500<br>~~=~~<br>~~Ca~~|V<br>~~=~~|
|VGE<br>~~—ss~~|Gate-to-Emitter Voltage<br>~~ss~~|±20||
|PD@ TC= 25°C<br>~~—ss~~|Maximum Power Dissipation<br>~~ss~~|52|W|
|PD@ TC= 100°C <br>~~ss~~<br>~~ees~~|Maximum Power Dissipation<br>~~ss~~<br>~~ees~~|26<br>~~ees~~||
|TJ<br>TSTG<br>~~ss~~<br>~~ees~~<br>~~eee~~|Operating Junction and<br>Storage Temperature Range<br>~~ss~~<br>~~ees~~<br>~~eee~~|-55 to +175<br>~~ees~~<br>~~eee~~|°C<br>~~eee~~|
|~~eee~~<br>~~Ca~~|SolderingTemperature for 10 sec.<br>~~eee~~<br>~~Ca~~|300(0.063 in.(1.6mm)from case)<br>~~eee~~<br>~~Ca~~||
|~~CO~~|MountingTorque,6-32 or M3 Screw<br>~~CO~~|10 lbf.in(1.1N.m)<br>~~CO~~|~~CO~~|



## **Thermal / Mechanical Characteristics** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC|Junction-to-Case- IGBT|–––|–––|2.9|°C/W|
|RθJC|Junction-to-Case- Diode|–––|–––|4.6||
|RθCS|Case-to-Sink,flat, greased surface|–––|0.50|–––||
|RθJA|Junction-to-Ambient,typical socket mount|–––|–––|62||
|Wt|Weight|–––|2.0|–––|g|



www.irf.com 

1 

12/30/03 

## IRGIB15B60KD1P 

**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Min.|Typ.|Max.|Units        Conditions|Ref.Fig.|
|Rs|QO|GO|GOD|GO|GO|
|CG|V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE = 0V, IC = 500µA|
|∆V(BR)CES/∆TJ|Temperature Coeff. of Breakdown Voltage|—|0.32|—|V/°C|VGE = 0V, IC = 1mA (25°C-150°C)|
|ee|GO|GOGO|
|a|—|1.80|2.20|IC = 15A, VGE = 15V, TJ = 25°C|5,6,7|
|VCE(on)|Collector-to-Emitter Voltage|a|—|2.05|ee|2.50|V|IC = 15A, VGE = 15V, TJ = 150°C|9,10,11|
|—|2.10|2.60|IC = 15A, VGE = 15V, TJ = 175°C|
|VGE(th)|Gate Threshold Voltage|3.5|4.5|5.5|V|VCE = VGE, IC = 250µA|9,10,11|
|∆VGE(th)/∆TJ|Threshold Voltage temp. coefficient|—|-10|—|mV/°C VCE = VGE, IC = 1mA (25°C-150°C)|12|
|Cees|gfe|Forward Transconductance|GOa|—|GO|10|eeGO|—|GD|S|GOPo|VCE = 50V, IC = 15A, PW = 80µs|
|es|ee|GO|QO|
|—|1.0|150|VGE = 0V, VCE = 600V|
||||||ee|
|ICES|Zero Gate Voltage Collector Current|a|—|163|500|µA|VGE = 0V, VCE = 600V, TJ = 150°C|
|a|—|829|1800|VGE = 0V, VCE = 600V, TJ = 175°C|
|VFM|Diode Forward Voltage Drop|||—|1.69|2.30|V|IF = 15A, VGE = 0V|8|
|||—|||1.31|||1.75|P|IF = 15A, VGE = 0V, T|rC|J = 150°C|
|—|1.25|1.65|IF = 15A, VGE = 0V, TJ = 175°C|
|ee|IGES|Gate-to-Emitter Leakage Current|GOa|—|—|±100|GO|nA|VGE = ±20V, VCE = 0V|
|Switching Characteristics @ TJ = 25°C (unless otherwise specified)|
|es|ee|Parameter|Q|Min.|Typ.|Max.|Units|O|Conditions|Ref.Fig.|
|ee|Qg|Total Gate Charge (turn-on)|—|56|84|IC = 15A|23|
|Qge|Gate-to-Emitter Charge (turn-on)|—|7.0|10|nC|VCC = 400V|CT1|
|esa|
|Qgc|Gate-to-Collector Charge (turn-on)|—|26|39|VGE  = 15V|
|ee|
|Eon|Turn-On Switching Loss|—|127|140|IC = 15A, VCC = 400V|CT4|
|ee|
|Eoff|Turn-Off Switching Loss|—|334|422|µJ|VGE = 15V, RG = 22Ω, L = 1.07mH|
|a|
|Etot|Total Switching Loss|—|461|556|Ls= 150nH,  TJ = 25°C|
|Rs|®|
|td(on)|Turn-On delay time|—|30|39|IC = 15A, VCC = 400V|
|ee|
|tr|Rise time|—|25|35|ns|VGE = 15V, RG = 22Ω, L = 1.07mH|CT4|
|ee|
|td(off)|Turn-Off delay time|—|173|188|Ls= 150nH,  TJ = 25°C|
|a|
|tf|Fall time|—|41|53|
|Rs|
|Eon|Turn-On Switching Loss|—|258|282|IC = 15A, VCC = 400V|CT4|
|ee|
|Eoff|Turn-Off Switching Loss|—|570|646|µJ|VGE = 15V, RG = 22Ω, L = 1.07mH|13,15|
|es|
|a|Etot|Total Switching Loss|—|829|915|Ls= 150nH, TJ = 150°C|@|WF1,WF2|
|td(on)|Turn-On delay time|—|30|39|IC = 15A, VCC = 400V|14,16|
|ee|
|tr|Rise time|—|25|35|ns|VGE = 15V, RG = 22Ω, L = 1.07mH|CT4|
|ee|
|td(off)|Turn-Off delay time|—|194|207|Ls= 150nH,  TJ = 150°C|WF1|
|a|
|tf|Fall time|—|56|73|WF2|
|es|
|LE|Internal Emitter  Inductance|—|7.5|—|nH|Measured 5 mm from package|
|ee|GO|GD|GO|
|Cies|Input Capacitance|—|850|1275|VGE = 0V|
|ee|
|Coes|Output Capacitance|—|100|150|pF|VCC = 30V|22|
|a|
|Cres|Reverse Transfer Capacitance|—|32|48|f = 1.0MHz|
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE|TJ = 150°C, IC = 38A, Vp = 600V|4|
|VCC=500V,VGE = +15V to 0V,RG = 22Ω|CT2|
|ee|SCSOA|Short Circuit Safe Operating Area|ee|10|ee|—|—|ee|µs|TJ = 150°C, Vp = 600V, RG = 22Ω|CT3|
|VCC=360V,VGE = +15V to 0V|WF4|
|ISC (PEAK)|Peak Short Circuit Collector Current|—|140|—|A|WF4|
|CT|ef|
|Erec|Reverse Recovery Energy of the Diode|—|267|347|µJ|TJ = 150°C|17,18,19|
|RsGO|
|trr|Diode Reverse Recovery Time|—|67|87|ns|VCC = 400V, IF = 15A, L = 1.07mH|20,21|
|RsGO|
|Irr|Peak Reverse Recovery Current|—|23|30|A|VGE = 15V, RG = 22Ω|CT4,WF3|
|eeee|
|Qrr|Diode Reverse Recovery Charge|—|984|1279|nC|di/dt = 875A/µs|
|ee|
|(0)|Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 22Ω.|®@|Energy losses include "tail" and diode reverse recovery.|

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Energy losses include "tail" and diode reverse recovery. 

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## IRGIB15B60KD1P 

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20 55<br>50<br>on e MT T TTI<br>16 | NY 45 i<br>N 40 PT OINE EELS<br>35<br>12 \ PRE<br>30<br>x PPPPSX ELL<br>25<br>8<br>COPOPN TT} 20 GEREN<br>NS PONE<br>15<br>4 \ 10 NT<br>CCOOOONE) = EERE REE<br>5<br>0 \ 0 PPE rreeee Ni<br>0 POOCTEE) 20 40 60 80 100 120 140 160 180 = 0 EREEEF 20 40 60 80 100 120 ERS 140 160 180<br> TC (°C)  TC (°C)<br>IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br>


**Fig. 1** - Maximum DC Collector Current vs. Case Temperature 

**Fig. 2** - Power  Dissipation vs. Case Temperature 

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100<br>UU JAMIE I HH<br>10 µs<br>10 CALaiTIINNSQTIISS.TEAIIEui an  a LEH<br>ANTE<br>A a Sa<br>CATALIN SCHR 100 µs ILI<br>1 EU UI TSE LTH<br>|FFA ANWIE 1ms  Ael<br>DC<br>0.1 LV CHINE LPN LET<br>1 10 100 1000 10000<br> VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>


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100 es ee ee ee ee eee<br>EEE EEE<br>10<br>[||<br>eee eet<br>ee es eei<br>EAE<br>1<br>10 100 1000<br>VCE (V)<br>IC A)<br>**----- End of picture text -----**<br>


**Fig. 3** - Forward SOA TC = 25°C; TJ ≤ 150°C 

**Fig. 4** - Reverse Bias SOA TJ = 150°C; VGE =15V 

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## IRGIB15B60KD1P 

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20<br>18 ee |<br>16<br>14 VGE = 18V<br>VGE = 15V<br>12 VGE = 12V<br>VGE = 10V<br>10 RS<br>8 n/a VGE = 8.0V<br>a<br>6 Se<br>4 f o<br>2 a a<br>><br>0<br>0 2 4 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 60µs 

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20<br>___<br>18<br>16<br>14  oFS~n.~...] VGE = 18V<br>VGE = 15V<br>12 VGE = 12V<br>—_f- VGE = 10V<br>10<br>VGE = 8.0V<br>8 ff<br>6<br>p f<br>4<br>2 A<br>A<br>0<br>0 2 4 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 60µs 

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20<br>18 Md<br>16<br>14 VGE = 18V<br>VGE = 15V<br>12 VGE = 12V<br>VGE = 10V<br>10 ae =<br>ee VGE = 8.0V<br>8<br>/i<br>6 s e ee<br>4 a ee eee<br>Ae<br>2<br>0 > eeee<br>0 2 4 6<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 60µs 

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70<br>-40°C<br>60 25°C<br>150°C<br>50 HP a H<br>40<br>ae) se<br>30<br>ieee, ae<br>20<br>P| | Sf |<br>10<br>Lf<br>0 | Ley | |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typ. Diode Forward Characteristics tp = 60µs 

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20<br>18 PTT<br>16 Pott<br>14 | ee<br>ite<br>12 ICE = 7.5A<br>10 | it | CE ICE = 15A<br>8 Wes ICE =  30A<br>6 He<br>| ce<br>4<br>20 ee ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typical VCE vs. VGE TJ = -40°C 

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20<br>18<br>1<br>16 Pf<br>14<br>12 ICE = 7.5A<br>aime<br>10 ICE = 15A<br>Ripe ICE =  30A<br>8 Ae=<br>6 P A<br>4<br>2 cee<br>0 ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 11** - Typical VCE vs. VGE TJ = 150°C 

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20<br>18 Pett<br>16 Pett,<br>14 |<br>12 mine ICE = 7.5A<br>10 miti~a ICE = 15A<br>ICE =  30A<br>8 Whe<br>6 =<br>4 6a oa<br>2<br>0 es ee<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 10** - Typical VCE vs. VGE TJ = 25°C 

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70<br>60 TJ = 25°C ——<br>50 TJ = 150°C YY<br>40 ee ae<br>30 a a<br>20 a ae<br>TJ = 150°C<br>10<br>ey T ee J = 25°C<br>0 4a<br>0 5 10 15<br> VGE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 

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## IRGIB15B60KD1P 

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14001200 P f fo ff dd 1000 Fe Tsdf]ffdffdfsfidffésf<br>tdOFF<br>1000 e e<br>EOFF 100<br>800 pp A EON P tF e<br>600 tdON<br>tR<br>|| | Pe l a a<br>10<br>400<br>pee aeeeeeeee<br>200<br>0<br>1<br>0 5 10 15 20 25 30<br>pre 0 EP 5 [EE] 10 15 20 25 30<br> IC (A)<br>IC (A)<br>Energy (µJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


**Fig. 13** - Typ. Energy Loss vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 22Ω; VGE= 15V 

**Fig. 14** - Typ. Switching Time vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 22Ω; VGE= 15V 

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1200 10000<br>1000 EOFF<br>j t pt pp<br>800 EON 1000<br>A<br>600 tdOFF<br>400 Se 100 f a<br>tF<br>200 F OS) tdON Kee<br>tR<br>0 | | ft 10 E an<br>0 50 100 150 200 0 50 100 150 200<br>RG (Ω) RG (Ω)<br>Swiching Time (ns)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V 

**Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V 

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## IRGIB15B60KD1P 

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25 24<br>RG = 22 Ω 20<br>20 |b ey ] LLL<br>RG = 47 Ω 16<br>15 P fr ULE CALNN I<br>RG = 100 Ω 12<br>10<br>RG = 200 Ω 8<br>5 a 4 P | | ||<br>Titty} E|E|<br>0 0<br>0 5 10 15 20 25 30 0 40 80 120 160 200<br>IF (A) RG (Ω)<br>IRR (A) IRR (A)<br>**----- End of picture text -----**<br>


**Fig. 17** - Typical Diode IRR vs. IF TJ = 150°C 

**Fig. 18** - Typical Diode IRR vs. RG TJ = 150°C; IF = 15A 

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24<br>20<br>Pt<br>16<br>GEREDZAnEe<br>12 BER Ananee<br>8 BEVARREREE<br>4 BERR REREEE<br>0<br>TY EET TT TE<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRR (A)<br>**----- End of picture text -----**<br>


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1500<br>30A<br>1000<br>15A<br>7.5A<br>22Ω<br>500 47Ω<br>100 Ω<br> 200Ω<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig. 19** - Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 15A; TJ = 150°C 

**Fig. 20** - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C 

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## IRGIB15B60KD1P 

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200<br>160<br>TIT<br>120<br>ae72e<br>200 Ω<br>100 Ω<br>80 b ul<br>  47 Ω<br>  22 Ω<br>E ee<br>40<br>0 5 10 15 20 25<br>IF (A)<br>Fig. 21  - Typical Diode ERR vs. IF<br>TJ = 150°C<br>10000 16<br>14<br>TTT] F E 300V E<br>12 400V<br>Cies<br>1000<br>Vi t i 10<br>ty} p f<br>8<br>6<br>100 Coes<br>ANNea e e| 4 eo7-<br>Cres 2<br>ee e ) 0 Fe<br>10<br>0 20 40 60 80<br>0 20 40 60 80 100<br>Q G, Total Gate Charge (nC)<br>VCE (V)<br>VGE (V)<br>Capacitance (pF)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig. 22** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 

**Fig. 23** - Typical Gate Charge vs. VGE ICE = 15A; L = 2500µH 

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## IRGIB15B60KD1P 

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**----- Start of picture text -----**<br>
10<br>1 D = 0.50 0 a a 8 a e m<br>= 0.20 |<br>0.10 h h e e | | Ty<br>Sre e mani met em |<br>0.1 ca P 0.0.020.01 0 5 arrmeeTr P I τJ τJτ1τ1 R1 R1 τ2 τR22 R2 Rτ33Rτ “I 33 τCτ Ri (°C/W)   0.437       0.0005421.087       0.127526 PCH  τi (sec) LAH|1<br>0.01 A Ci= Ciτi/τRii/Ri -— 1.376       2.702 |<br>e g en | et Notes: FEAT<br>P A SINGLE PULSE 1. Duty Factor D = t1/t2 |<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>may I PS Hil<br>ae FPA Ay<br>0.001 PAT | E E |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 24.   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>F HTHT<br>He TT T ee cee ee eh ame TTTT TT T T  TTT<br>D = 0.50<br>siiiiosamom ntti amma Ee |<br>1 0.20 ee<br>R e 0. 1 0 eee nse oat —aeannitlelt  OeT | | ||<br>P 0.05 e R1 R1 R2 R2 R3 R3 R4R4 Ri (°C/W)    eee ee  τi (sec)<br>0.1 Mee — 0.020.01 inATcritieeeay | N|| τJ P τ 6 Jτ1τ | 1 | τ2τ2 | τ3τ3 τ4τ4 6 τCτ ee 0.8631       0.0002020.6432       0.0010531.1937       0.055415<br>Ci= τi/Ri 1.9013      2.335<br>0.01 Pi AN i Ci i/Ri<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br> thJC )<br>Thermal Response ( Z<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 25.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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## IRGIB15B60KD1P 

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**----- Start of picture text -----**<br>
L<br>L<br>DUT VCC 80 V + DUT<br>0 - 480V<br>1K Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

**==> picture [314 x 273] intentionally omitted <==**

**----- Start of picture text -----**<br>
diode clamp /<br>DUT<br>Driver L<br>- 5V<br>DC 360V<br>DUT /<br>DRIVER VCC<br>DUT Rg<br>\VJ<br>Fig.C.T.4  - Switching Loss Circuit<br>VCC<br>R =<br>ICM<br>DUT VCC<br>Rg<br>. |YT<br>**----- End of picture text -----**<br>


**Fig.C.T.3** - S.C.SOA Circuit 

**Fig.C.T.5** - Resistive Load Circuit 

www.irf.com 

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## IRGIB15B60KD1P 

**==> picture [211 x 512] intentionally omitted <==**

**----- Start of picture text -----**<br>
600 30<br>500 ee 25<br>tf<br>400 20<br>90% ICE<br>300 15<br>200 10<br>5% VCE<br>100 5% I CE 5<br>0 0<br>Eoff Loss<br>-100 -5<br>0.1 0.3 0.5 0.7<br>time(µs)<br>Fig. WF1- Typ. Turn-off Loss Waveform<br>@ TJ = 150°C using Fig. CT.4<br>100 20<br>0 i 15<br>QRR<br>-100 10<br>tRR<br>-200 5<br>-300 Ve 0<br>-400 -5<br>Peak<br>-500 -10<br>IRR<br>10%<br>-600 -15<br>Peak<br>-700 IRR -20<br>-800 ho -25<br>-900 fF -30<br>0.10 0.20 0.30 0.40 0.50<br>time (µS)<br> (V)  (A)<br>VCE ICE<br> (V)VF  (A)IF<br>**----- End of picture text -----**<br>


Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 

**==> picture [208 x 236] intentionally omitted <==**

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800 40<br>700 35<br>OC<br>TEST CURRENT<br>600 30<br>tr<br>500 25<br>90% test current<br>400 20<br>300 15<br>200 10<br>10% test current<br>100 5% V CE 5<br>0 0<br>Eon Loss<br>-100 -5<br>0.2 0.4 0.6<br>time (µs)<br> (V)  (A)<br>VCE ICE<br>**----- End of picture text -----**<br>


Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 

**==> picture [204 x 261] intentionally omitted <==**

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450 400<br>400 | 350<br>350300 oe 300250<br>ee oe<br>250 200<br>200 150<br>150 100<br>100 50<br>50 0<br>0 -50<br>ee<br>0 10 20 30 40 50<br>Time (uS)<br>Fig. WF4- Typ. S.C Waveform<br>@ TC = 150°C using Fig. CT.3<br> (V)  (A)<br>VCE I CE<br>**----- End of picture text -----**<br>


www.irf.com 

11 

## IRGIB15B60KD1P 

## TO-220 Full-Pak Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-220 Full-Pak Part Marking Information 

**==> picture [300 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
E XAMP L E : T H IS  IS  AN  IR F I840G<br>WIT H  AS S E MB L Y  P AR T  N U M B E R<br>L OT  COD E  3432 IN T E R N AT ION AL<br>AS S E MB L E D  ON  WW  24 1999 R E CT IF IE R IR F I840G<br>IN  T H E  AS S E MB L Y L IN E  "K " L OGO 9 24K<br>Note: position indicates "Lead-Free"  "P" in assembly line AS S E M B L Y  34         32 D AT E  COD EY E AR  9 =  1999<br>L OT  COD E W E E K  24<br>L IN E  K<br>**----- End of picture text -----**<br>


## **TO-220 FullPak packages are not recommended for Surface Mount Application.** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 

www.irf.com 

12 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [View this product on Novapart](https://novapart.co/products/IRGIB15B60KD1P/igbt-19-a-22-v-52-w-600-to-220fp-3-pins)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irgib15b60kd1p/igbt-to-220fp/dp/1013530)
---

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