# IGBT, N-CH, 21 A, 1.7 V, 100 W, 650 V, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:2580048/)

**URL**: https://novapart.co/products/IRGB4715DPBF/igbt-n-ch-21-a-17-v-100-w-650-to-220ab-3-pins
**SKU**: IRGB4715DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.6920
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 100W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 21A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580048/)

IRGB4715DPbF IRGS4715DPbF ~~a~~ 

## _**Insulated Gate Bipolar Transistor  with Ultrafast Soft Recovery Diode**_ 

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VCES = 650V<br>C C<br>IC = 15A, TC =100°C<br>tSC 5.5µs, TJ(max) = 175°C  E<br>VCE(ON) typ. = 1.7V @ IC = 8A G G C<br>G  [C E ]<br>Applications E IRGS4715DPbF  IRGB4715DPbF<br>n-channel D [2] ‐Pak  TO‐220AB<br>• Industrial Motor Drive<br>G  C  E<br>• Solar Inverters<br>Gate  Collector  Emitter<br>**----- End of picture text -----**<br>


## **Applications** 

- Industrial Motor Drive 

- UPS 

- Solar Inverters 

- Welding 

## **Benefits** 

## **Features** 

Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5µs Short Circuit SOA ~~Co~~ Rugged  Transient Performance Square RBSOA ~~eG~~ Maximum Junction Temperature 175°C Increased Reliability ~~(Oe~~ Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendlyy friendly friendlyy 

Environmentally friendlyy friendly friendlyy 

|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**|
|---|
|**Form**<br>**Quantity**|
|IRGB4715DPbF<br>TO-220<br>Tube<br>50<br>IRGB4715DPbF|
|Tube<br>50<br>IRGS4715DPbF|
|IRGS4715DPbF<br>D2-Pak<br>Tape and Reel Left<br>800<br>IRGS4715DTRLPbF|
|Tape andReel Right<br>800<br>IRGS4715DTRRPbF|
|**Absolute Maximum Ratings**|
|**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Voltage<br>650<br>V<br>~~es~~<br>~~sO~~|
|IC@ TC =25°C<br>Continuous Collector Current<br>21<br>IC @TC= 100°C<br>Continuous Collector Current<br>15<br>ICM<br>Pulse Collector Current, VGE=15V<br>24<br>ILM<br>Clamped Inductive Load  Current, VGE=20V<br>32<br>IF @TC= 25°C<br>Diode Continuous Forward Current<br>21<br>IF @TC= 100°C<br>Diode Continuous Forward Current<br>13<br>IFM<br>Diode Maximum Forward Current<br>32<br>VGE<br>Continuous Gate-to-Emitter Voltage<br>±30<br>V<br>A<br>~~eseG~~<br>~~rsre~~<br>~~Ge~~<br>~~=~~<br>~~a~~|
|PD @TC= 25°C<br>Maximum Power Dissipation<br>100<br>W<br>PD @TC= 100°C<br>Maximum Power Dissipation<br>50<br>TJ<br>Operating Junction and<br>-40 to +175<br>C<br>TSTG<br>Storage Temperature Range<br>Soldering Temperature, for 10 sec.<br>300 (0.063 in. (1.6mm) from case)<br>Mounting Torque, 6-32 or M3 Screw<br>10 lbf·in (1.1 N·m)<br>~~a~~<br>~~a~~<br>~~eeee~~<br>~~eses~~|
|**Thermal Resistance**|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**|
|RJC(IGBT)<br>Thermal Resistance Junction-to-Case-(each IGBT) <br>–––<br>–––<br>1.5|
|RJC(Diode)Thermal Resistance Junction-to-Case-(each Diode) <br>–––<br>–––<br>3.6|
|°C/W<br>RCS<br>Thermal Resistance,Case-to-Sink(flat, greased surface)<br>–––<br>0.5<br>–––|
|RJA<br>Thermal Resistance,Junction-to-Ambient(TO-220)<br>–––<br>–––<br>62|
|RJA<br>Thermal Resistance,Junction-to-Ambient(D2-Pak)<br>–––<br>–––<br>40|



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## ~~IGR~~ 

## IRGB4715DPBF/IRGS4715DPBF ~~Ts~~ 

|**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|
|---|
|**Parameter**<br>**Min.**<br>**Typ. **<br>**Max.**<br>**Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>650<br>—<br>—<br>V<br>VGE =0V, IC =100µA<br>V(BR)CES/TJTemperature Coeff. of Breakdown Voltage<br>—<br>0.8<br>—<br>V/°C VGE= 0V, IC= 1mA (25°C-175°C)<br>VCE(on)<br>Collector-to-Emitter Saturation Voltage<br>—<br>1.7<br>2.0<br>V<br>IC=8A,VGE= 15V,TJ= 25°C<br>—<br>2.1<br>—<br>IC =8A, VGE =15V, TJ =175°C<br>VGE(th)<br>Gate Threshold Voltage<br>5.5<br>—<br>7.4<br>V<br>VCE= VGE, IC= 250µA<br>~~ee~~<br>~~nD ID Int~~<br>~~ns(nd~~<br>~~es~~<br>~~TTD (RN (OU~~<br>~~es~~<br>~~ry~~<br>~~ns I~~<br>~~a~~<br>~~ee~~<br>~~ry~~<br>~~td I~~<br>~~rs(I~~|
|VGE(th)/TJ<br>Threshold Voltage Temperature Coeff.<br>—<br>-19<br>—<br>mV/°C VCE= VGE, IC= 250µA(25°C-175°C)|
|gfe<br>Forward Transconductance<br>—<br>5.7<br>—<br>S<br>VCE =50V, IC =8A, PW=20µs<br>ICES<br>Collector-to-Emitter Leakage Current<br>—<br>1.0<br>25<br>µA<br>VGE =0V, VCE =650V<br>—<br>1.0<br>—<br>VGE =0V, VCE =650V, TJ =175°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE =±30V<br>VF<br>—<br>1.8<br>2.8<br>V<br>IF =8A<br>—<br>1.3<br>—<br>IF= 8A,TJ= 175°C<br>Diode Forward Voltage Drop<br>mA<br>~~a~~<br>~~es~~<br>~~rs(OD (RR (QO~~<br>~~ff~~<br>~~EE~~<br>~~SE~~<br>~~EE~~|
|**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min.**<br>**Typ. Max****Units**<br>**Conditions**<br>Qg<br>Total Gate Charge (turn-on)<br>—<br>20<br>30<br>nC<br>IC= 8A<br>Qge<br>Gate-to-Emitter Charge (turn-on)<br>—<br>6<br>9<br>VGE= 15V<br>Qgc<br>Gate-to-Collector Charge (turn-on)<br>—<br>8<br>12<br>VCC= 400V<br>Eon<br>Turn-OnSwitchingLoss<br>—<br>200<br>310<br>~~———————~~<br>~~ee~~<br>~~eee el ee~~|
|µJ IC= 8A, VCC= 400V, VGE=15V<br>RG= 50, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery<br>Eoff<br>Turn-OffSwitchingLoss<br>—<br>90<br>180<br>Etotal<br>Total SwitchingLoss<br>—<br>290<br>490<br>td(on)<br>Turn-On delay time<br>—<br>30<br>50<br>ns<br>tr<br>Rise time<br>—<br>20<br>30<br>td(off)<br>Turn-Off delay time<br>—<br>100<br>120<br>tf<br>Fall time<br>—<br>20<br>30<br>~~——~~|
|Eon<br>Turn-On Switching Loss<br>—<br>340<br>—<br>µJ<br>IC= 8A, VCC= 400V, VGE=15V<br>RG= 50, TJ= 175°C<br>Energy losses include tail & diode<br>reverse recovery<br>Eoff<br>Turn-Off SwitchingLoss<br>—<br>170<br>—<br>Etotal<br>Total SwitchingLoss<br>—<br>510<br>—<br>td(on)<br>Turn-On delaytime<br>—<br>30<br>—<br>ns<br>tr<br>Rise time<br>—<br>20<br>—<br>td(off)<br>Turn-Off delaytime<br>—<br>120<br>—<br>tf<br>Fall time<br>—<br>70<br>—<br>Cies<br>Input Capacitance<br>—<br>540<br>—<br>VGE= 0V<br>Coes<br>Output Capacitance<br>—<br>50<br>—<br>pF<br>VCC= 30V<br>Cres<br>Reverse Transfer Capacitance<br>—<br>15<br>—<br>f = 1.0Mhz<br>RBSOA<br>Reverse Bias Safe Operating Area<br>TJ= 175°C, IC= 32A<br>FULL SQUARE<br>VCC= 520V, Vp ≤ 650V<br>VGE= +20V to 0V<br>SCSOA<br>Short Circuit Safe Operating Area<br>5.5<br>—<br>—<br>µs TJ= 150°C,VCC= 400V, Vp ≤ 650V<br>VGE= +15V to 0V<br>Erec<br>Reverse RecoveryEnergyof the Diode<br>—<br>130<br>—<br>µJ<br>TJ= 175°C<br>trr<br>Diode Reverse RecoveryTime<br>—<br>86<br>—<br>ns<br>VCC= 400V, IF= 8A<br>Irr<br>Peak Reverse RecoveryCurrent<br>—<br>8<br>—<br>A<br>VGE= 15V,Rg= 50<br>~~Se~~<br>~~a~~<br>~~aBS~~<br>~~—<~~<br>~~=~~<br>~~+~~<br>~~i a~~<br>~~ee~~<br>~~ee ee~~|
|**Notes:**|
|VCC= 80% (VCES), VGE= 20V.|
|Ris measured at TJof approximately 90°C.|
|Refer to AN-1086 for guidelines for measuring V(BR)CESsafely.|
|Maximum limits are based on statistical sample size characterization.|
|Pulse width limited by max. junction temperature.|
|Values influenced by parasitic L and C in measurement.|
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**Notes:** 

-  VCC = 80% (VCES), VGE = 20V. 

-  R is measured at TJ of approximately 90°C. 

-  Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

-  Maximum limits are based on statistical sample size characterization. 

-  Pulse width limited by max. junction temperature. 

 Values influenced by parasitic L and C in measurement. 

~~BY) 54~~ 

IRGB4715DPBF/IRGS4715DPBF ~~I tt—SY~~ 

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30<br>For both:<br>Duty cycle : 50%<br>25 Tj = 175 ° C<br>CA Tcase = 100°C TI<br>Gate drive as specified<br>20 FF ul Power Dissipation = 50W<br>15 Cc CTRL Ih<br>Square Wave:<br>10 VCC<br>AM<br>I<br>a<br>5<br>Diode as specified<br>Ca [CENT] C C SST<br>2Co o<br>0<br>0.1 1 10 100<br>f , Frequency ( kHz )<br>Fig. 1  - Typical Load Current vs. Frequency<br>     (Load Current = IRMS of fundamental)<br>25 120<br>20 Pit tL<br>90<br>15<br>PNET 60 Qo<br>10<br>CEN N<br>30<br>5<br>CEE NG LIN<br>0 PE  ELEN 0 BaaN<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br> TC (°C)  TC (°C)<br>Fig. 2  - Maximum DC Collector Current vs.   Fig. 3  - Power  Dissipation vs.<br>Case Temperature  Case Temperature<br>100 100<br>10µsec<br>10<br>100µsec<br>10<br>1msec<br>1<br>DC<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 XQ 1 a<br>1 10 100 1000 10 100 1000<br>VCE (V) VCE (V)<br>Fig. 4  - Forward SOA  Fig. 5  - Reverse Bias SOA<br>TC = 25°C; TJ ≤ 175°C; VGE = 15V  TJ = 175°C; VGE = 20V<br>Ptot (W)<br>IC (A) IC (A)<br>IC (A)<br>Load Current  ( A )<br>**----- End of picture text -----**<br>


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32 32<br>VGE = 18V VGE = 18V<br>VGE = 15V VGE = 15V<br>24 aie VGE = 12V 24 TL. VGE = 12V<br>V GE  = 10V V GE  = 10V<br>VGE = 8.0V VGE = 8.0V<br>16 16<br>AP toh<br>8 8<br>or eee<br>0 FERRIS 0 JERE<br>0 2 4 6 8 10 0 2 4 6 8 10<br> VCE (V)  VCE (V)<br>Fig. 6  - Typ. IGBT Output Characteristics   Fig. 7  - Typ. IGBT Output Characteristics<br>TJ = -40°C; tp = 20µs  TJ = 25°C; tp = 20µs J = 25°C; tp = 20µs  = 25°C; tp = 20µs<br>32 32<br>VGE = 18V<br>VGE = 15V<br>24 VGE = 12V 24<br>VGE = 10V<br>VGE = 8.0V<br>16 aes 16 of<br>{| can) ae<br>-40°C<br>25°C<br>175°C<br>8 8<br>0 WotVane 0 fe77 ann<br>0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VCE (V)  VF (V)<br>ICE (A) ICE (A)<br>ICE (A) IF (A)<br>**----- End of picture text -----**<br>


**Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs J = 25°C; tp = 20µs  = 25°C; tp = 20µs 

**Fig. 9** - Typ. Diode Forward Voltage Drop Characteristics 

**Fig. 8** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs 

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8<br>6 I CE  = 4A<br>ICE = 8A<br>ICE = 16A<br>4<br>2<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


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8<br>6 ll I CE  = 4A<br>ICE = 8A<br>ICE = 16A<br>4 a<br>2<br>a<br>|=<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 10  - Typical VCE vs. VGE<br>TJ = -40°C<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 11** - Typical VCE vs. VGE 

TJ = 25°C 

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IRGB4715DPBF/IRGS4715DPBF<br>ick 8 32<br>TJ = 25°C<br>6 I CE  = 4A 24 TJ = 175°C<br>ICE = 8A<br>ICE = 16A<br>4 Tr] 16 fe<br>mine TA<br>2 8<br>Ue<br>0 ee 0 AN<br>5 10 15 20 6 7 8 9 10 11 12 13 14 15 16<br> VGE (V)  VGE (V)<br>Fig. 12  - Typical VCE vs. VGE   Fig. 13  - Typ. Transfer Characteristics<br>TJ = 175°C  VCE = 50V; tp = 20µs<br>1000 1000<br>800<br>100 td OFF<br>600 E ON tF<br>INHER tdON<br>400 tR<br>EOFF 10 res<br>200<br>0 1 TE<br>0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16<br>IC (A) IC (A)<br>Fig. 14  - Typ. Energy Loss vs. IC Fig. 15  - Typ. Switching Time vs. ICC<br>TJ = 175°C; VCE = 400V, RG = 50; VGE = 15V  TJ = 175°C; VCE = 400V, RG = 50; VGEJ = 175°C; VCE = 400V, RG = 50; VGE = 175°C; VCE = 400V, RG = 50; VGECE = 400V, RG = 50; VGE = 400V, RG = 50; VGEG = 50; VGE = 50; VGE; VGE; VGEGE = 15V<br>600 1000<br>500<br>td OFF<br>400 100<br>EEEEe tF<br>EON<br>300<br>td ON<br>tR<br>200 10<br>EOFF<br>100<br>0 1 EEEEE<br>0 20 40 60 80 100 0 20 40 60 80 100<br>Rg () RG ()<br>VCE (V) ICE (A)<br>J)<br><br>Energy (<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


**Fig. 15** - Typ. Switching Time vs. ICC TJ = 175°C; VCE = 400V, RG = 50; VGEJ = 175°C; VCE = 400V, RG = 50; VGE = 175°C; VCE = 400V, RG = 50; VGECE = 400V, RG = 50; VGE = 400V, RG = 50; VGEG = 50; VGE = 50; VGE; VGE; VGEGE = 15V 

**Fig. 17** - Typ. Switching Time vs. RG 

**Fig. 16** - Typ. Energy Loss vs. RG G TJ = 175°C; VCE = 400V, ICE = 8A; VGE = 15V TJ = 175°C;  VCE = 400V, ICE = 8A; VGE = 15V 

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IRGB4715DPBF/IRGS4715DPBF ~~Ri~~ 

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20 16<br>14<br>15 TIL LE. CTT<br>RG = 10<br>12<br>RG = 22<br>10 10<br>RG = 50<br>8<br>Here RG = 100 | ACEIN<br>5 = =  ENE<br>+= TSE<br>6<br>TELL oie<br>0 4<br>2 4 6 8 10 12 14 0 20 40 60 80 100<br>IF (A) RG (<br>Fig. 18  - Typ. Diode IRR  vs. IF  Fig. 19  - Typ. Diode IRR  vs. RG<br> TJ = 175°C   TJ = 175°C<br>15 1400<br>1200<br>[Ly CCI<br>12<br>16A<br>1000<br> <br>9 800  8A<br><br>AREER<br>600<br>aot a<br>6<br>400 4A<br>3 | | 200 sinaeeot<br>0 200 400 600 800 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig. 20  - Typ. Diode IRR vs. diF/dt  RR vs. diF/dt   vs. diF/dt  F/dt  /dt   Fig. 21  - Typ. Diode QRR vs. diF/dt<br>= 400V; VGE = 15V; IF = 8A; TJ = 175°C GE = 15V; IF = 8A; TJ = 175°C  = 15V; IF = 8A; TJ = 175°C F = 8A; TJ = 175°C  = 8A; TJ = 175°C J = 175°C  = 175°C  VCC = 400V; VGE = 15V; TJ = 175°C<br>300 20 50<br>RG = 10<br>250 T RG =  o 22 T 16 THT 40<br>RG = 5 Tsc Isc<br>200 RG = 100<br>12 30<br>a PR<br>150<br>8 20<br>100<br>| A 4 FAN 10<br>50<br>0 PEELE 0 TT- 0<br>0 2 4 6 8 10 12 14 16 18 9 10 11 12 13 14 15 16<br>IF (A) VGE (V)<br>IRR (A) IRR (A)<br>IRR (A)<br>QRR (nC)<br>Energy (µJ)<br>Time (µs) Current (A)<br>**----- End of picture text -----**<br>


**Fig. 20** - Typ. Diode IRR vs. diF/dt  RR vs. diF/dt   vs. diF/dt  F/dt  /dt VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C GE = 15V; IF = 8A; TJ = 175°C  = 15V; IF = 8A; TJ = 175°C F = 8A; TJ = 175°C  = 8A; TJ = 175°C J = 175°C  = 175°C 

**Fig. 22** - Typ. Diode ERR vs. IF TJ = 175°C 

**Fig. 23** - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C 

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IRGB4715DPBF/IRGS4715DPBF ~~ee~~ 

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1000 16<br>Cies<br>14 VCES = 400V<br>ee 12 Ty VCES = 300V<br>100 Eaanae p| $f<br>| 10 i<br>8<br>NEE ae<br>Coes 6 fT<br>10 Re Tf LE fr<br>Cres 4<br>— =a pfi<br>2 Pt<br>1 | 0 f | |||<br>0 100 200 300 400 500 600 0 5 10 15 20<br>VCE (V) Q G, Total Gate Charge (nC)<br>Fig. 24  - Typ. Capacitance vs. VCE  Fig. 25  - Typical Gate Charge vs. VGEGE<br> VGE= 0V; f = 1MHz   ICE = 8A<br>10<br>1<br>D = 0.50<br>Tcan<br>0.20 Ri (°C/W)  i (sec)<br>0.1 7 0.020.010.05 0.10 HA J  J  1  1 R1 R1 2  R22 R2 R 3 3 R 3 3  R 4  4R4 4 CC | 0.04301  0.47918 0.59180  0.000008  0.000100 0.001347<br>Ci= iRi<br>Ci= iRi<br>0.01 a Be 0.38612  0.011340<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>Atta uae UT<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 26 -   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>D = 0.50<br>1 LT<br>me 0.20 yemmmaeniemeeeit A watt<br>0.10<br>Ri (°C/W)  i (sec)<br>0.05<br>0.1 He R1 R1 R2 R2 R3 R3 R4R 4 | 0.04541  0.000011<br>0.010.02 J J1  1 2  2  3  3  4 4 CC 1.07777  1.68129  0.000254  0.002170<br>Ci= iRi<br>Ci= iRi<br>0.01 4 0.79672  0.016960<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>aoa<br>0.001<br>1 a<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 25** - Typical Gate Charge vs. VGEGE 

**Fig. 27 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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IRGB4715DPBF/IRGS4715DPBF 

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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>


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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

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diode clamp /<br>DUT<br>4X L<br>DC VCC<br>-5V<br>DUT DUT / VCC<br>DRIVER<br>Rg<br>RSH<br>Fig.C.T.3  - S.C. SOA Circuit  Fig.C.T.4  - Switching Loss Circuit<br>C force<br>R =  [VCC]<br>ICM<br>100K<br>D1 22K<br>C sense<br>VCC<br>DUT DUT<br>G force 0.0075µF<br>Rg<br>E sense<br>fib<br>E force<br>Fig.C.T.5  - Resistive Load Circuit  Fig.C.T.6  - BVCES Filter Circuit<br>8  www.irf.com © 2013 International Rectifier Submit Datasheet Feedback<br>**----- End of picture text -----**<br>


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IRGB4715DPBF/IRGS4715DPBF ~~I tt—SY~~ 

## ~~TéaR~~ 

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500 25<br>500 25<br>tf tr<br>400 ileanne 20 400 20<br>in 300 yh TEST  15<br>300 15 CURRENT<br>90% ICE 200 90% ICE 10<br>200 10<br>ie awe<br>aa 100 po 10%ICE 5<br>100 5<br>10% VCE 10% ICE 10% VCE<br>0 0<br>0 0<br>Eoff Loss Eon Loss<br>-100 -5<br>-100 -5<br>-0.3 -0.05 0.2 0.45 0.7<br>-0.6 -0.2 0.2 0.6 1<br>time (µs)<br> (V)  (A)<br> (V)  (A) VCE ICE<br>VCE ICE<br>**----- End of picture text -----**<br>


_time(µs)_ 

**Fig. WF1** - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 

**Fig. WF2** - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 

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10<br>500 100<br>7.5<br>QRR 400 ae 80<br>5<br>tRR VCE<br>300 60<br>2.5<br>0 Se e e e<br>200 40<br>-2.5 ICE<br>i Peak a 100 fd 20<br>-5 IRR<br>-7.5 ae 0 Fo 0<br>-10 a eee<br>-100 -20<br>-0.15 0.05 0.25 0.45<br>-5.00 0.00 5.00 10.00<br>time (µS)<br>Time (uS)<br> (A)<br>IF<br>Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br>


**Fig. WF3** - Typ. Diode Recovery Waveform 

@ TJ = 175°C using Fig. CT.4 

**Fig. WF4** - Typ. S.C. Waveform 

@ TJ = 150°C using Fig. CT.3 

9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2014 ~~ee~~ 

IRGB4715DPBF/IRGS4715DPBF ~~ee~~ 

## ~~IweR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 12, 2014 ~~=°°”...~~ 

IRGB4715DPBF/IRGS4715DPBF 

**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

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THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>on YEAR 0 =  2000<br>ASSEMBLY U<br>LOT CODE WEEK 02<br>U UJ<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S j s<br>LOGO I@aR ~ DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE if WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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11 

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IRGB4715DPBF/IRGS4715DPBF ~~I tt—SY~~ 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [274 x 294] intentionally omitted <==**

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609) 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Revision Historyevision Historyvision Historysion Historyion Historyon Historyn Historystoryryy**||
|---|---|
|**Date**|**Comments**|
|11/12/2014|Added IFMDiode Maximum Forward Current  = 32A with the noteon page 1.<br>Removed notefrom switchinglosses test condition onpage 2.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

12 www.irf.com ~~=~~ 

~~_~~ 

12 www.irf.com © 2013 International Rectifier 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRGB4715DPBF/igbt-n-ch-21-a-17-v-100-w-650-to-220ab-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irgb4715dpbf/igbt-single-650v-21a-to-220ab/dp/2580048)
---

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