# IGBT, N-CH, 100 A, 1.7 V, 420 W, 1.2 kV, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:2580047/)

**URL**: https://novapart.co/products/IRG8P60N120KDPBF/igbt-n-ch-100-a-17-v-420-w-12-kv-to-247ac-3-pins
**SKU**: IRG8P60N120KDPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.5700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 420W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580047/)

IRG8P60N120KDPbF IRG8P60N120KD-EPbF 

## International 

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Insulated Gate Bipolar Transistor  with Ultrafast Soft Recovery Diode<br>VCES = 1200V<br>C<br>IC = 60A, TC =100°C<br>tSC 10µs, TJ(max) = 150°C  G C  [E ] E<br>G  G  [C ]<br>VCE(ON) typ. = 1.7V @ IC = 40A E IRG8P60N120KDPbF<br>_ n-channel | so IRG8P60N120KD‐EPbF  CR<br>TO‐247AC<br>Applications TO‐247AD<br>• Industrial Motor Drive  G  C  E<br>• UPS  Gate  Collector  Emitter<br>**----- End of picture text -----**<br>


- Solar Inverters 

- Welding 

## **Features** 

## **Benefits** 

Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications 

~~a~~ 10μs Short Circuit SOA Increases margin for short circuit protection scheme ~~a~~ Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation ~~a~~ Square RBSOA and high ILM- rating Rugged Transient Performance ~~a~~ Lead-Free, RoHS compliant ~~(I~~ Environmentally friendly 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRG8P60N120KDPbF|TO-247AC|Tube|25|IRG8P60N120KDPbF|
|IRG8P60N120KD-EPbF|TO-247AD|Tube|25|IRG8P60N120KD-EPbF|



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~es~~|**Absolute Maximum Ratings**<br>~~rs I~~|~~I~~||
|---|---|---|---|
|~~es~~|**Parameter**<br>~~rs I~~|**Max.**<br>~~I~~|**Units**|
|VCES<br>~~es~~<br>~~I~~|Collector-to-Emitter Voltage<br>~~rs I~~<br>~~I~~|1200<br>~~I~~<br>~~I~~|V<br>~~I~~|
|IC@ TC =25°C<br>~~a~~|Continuous Collector Current (Silicon Limited)<br>~~a~~|100<br>~~a~~|A<br>~~a~~<br>~~a~~|
|IC @TC= 100°C<br>~~a~~<br>~~ee~~|Continuous Collector Current<br>~~a~~|60<br>~~a~~||
|ICM<br>~~a~~<br>~~ee~~<br>~~ee~~|Pulse Collector Current (see fig. 2)<br>~~a~~|120<br>~~a~~||
|ILM<br>~~ee~~<br>~~ee~~<br>~~a~~|Clamped Inductive Load  Current(see fig. 3)<br>~~Re~~|160||
|IF@ TC =25°C<br>~~ee~~<br>~~a~~<br>~~es~~|Diode Continuous Forward Current<br>~~Re~~<br>~~es~~|50<br>~~es~~||
|IF @TC= 100°C<br>~~a~~<br>~~es~~|Diode Continuous Forward Current<br>~~Re~~<br>~~es~~|30<br>~~es~~||
|IFM<br>~~es~~<br>~~a~~|Diode Maximum Forward Current<br>~~es~~|160<br>~~es~~||
|VGE<br>~~a ~~<br>~~ee~~|Continuous Gate-to-Emitter Voltage<br> ~~Rf~~|±30<br>~~Rf~~|V<br>~~Rf~~|
|PD @TC= 25°C<br> <br>~~ee~~|Maximum Power Dissipation<br> ~~Rf~~|420<br>~~Rf~~|W<br>~~Rf~~|
|PD@ TC =100°C<br> <br>~~ee~~<br>~~NN~~|Maximum Power Dissipation<br> ~~Rf~~<br>~~NN~~|170<br>~~Rf~~||
|TJ<br>TSTG<br>~~NN~~<br>~~pp~~|Operating Junction and<br>Storage Temperature Range<br>~~NN~~<br>~~pp~~|-40 to +150<br>~~pp~~|C<br>~~pp~~|
|~~pp~~<br>~~es~~|Soldering Temperature, for 10 sec.<br>~~pp~~<br>~~nn~~|300 (0.063 in. (1.6mm) from case)<br>~~pp~~<br>~~nn~~||
|~~pp~~<br>~~es~~|Mounting Torque, 6-32 or M3 Screw<br>~~pp~~<br>~~nn~~|10 lbf·in (1.1 N·m)<br>~~pp~~<br>~~nn~~||



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IRG8P60N120KDPbF/IRG8P60N120KD-EPbF 

## ~~TOR~~ 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **|**Max****Units**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge (turn-on)|—|230|345|nC<br>|IC= 40A<br>VGE= 15V<br>VCC= 600V<br>~~oe~~|
|g<br>Qge<br>~~———~~|Gate-to-Emitter Charge (turn-on)<br>~~———~~|—|15|25|||
|ge<br>Qgc<br>~~———~~<br>~~re~~|Gate-to-Collector Charge (turn-on)<br>~~———~~<br>~~re~~|—<br>~~re~~|140<br>~~re~~|210<br>~~re~~|||
|gc<br>Eon<br>~~———~~<br>~~ee~~<br>~~re~~|Turn-OnSwitchingLoss<br>~~———~~<br>~~nn~~<br>~~re~~|—<br>~~nn~~<br>~~I~~<br>~~re~~|2.8<br>~~nn~~<br>~~I~~<br>~~re~~|—<br>~~nn~~<br>~~re~~|mJ <br>|IC= 40A, VCC= 600V, VGE=15V<br>RG= 5.0, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~oe~~|
|Eoff<br>~~———~~<br>~~ee~~<br>~~re~~|Turn-OffSwitchingLoss<br>~~———~~<br>~~nn~~<br>~~re~~|—<br>~~nn~~<br>~~I~~<br>~~re~~|2.3<br>~~nn~~<br>~~I~~<br>~~re~~|—<br>~~nn~~<br>~~re~~|||
|Etotal<br>~~———~~<br>~~ee~~<br>~~re~~|Total SwitchingLoss<br>~~———~~<br>~~nn~~<br>~~re~~|—<br>~~nn~~<br>~~I ~~<br>~~re~~|5.1<br>~~nn~~<br> ~~I~~<br>~~re~~|—<br>~~nn~~<br>~~re~~|||
|td(on)<br>~~———~~<br>~~re~~|Turn-On delay time<br>~~———~~<br>~~re~~|—<br>~~re~~|40<br>~~re~~|—<br>~~re~~|ns<br>||
|d(on)<br>tr<br>~~re~~|Rise time<br>~~re~~|—<br>~~re~~|30<br>~~re~~|—<br>~~re~~|||
|td(off)<br>~~re~~|Turn-Off delay time<br>~~re~~|—<br>~~re~~|240<br>~~re~~|—<br>~~re~~|||
|d(off)<br>tf<br>~~re~~|Fall time<br>~~re~~|—<br>~~re~~|110<br>~~re~~|—<br>~~re~~|||
|Eon<br>~~re~~|Turn-On Switching Loss<br>~~re~~|—<br>~~re~~|4.4<br>~~re~~|—<br>~~re ~~|mJ<br>|IC= 40A, VCC= 600V, VGE=15V<br>RG= 5.0, TJ= 150°C<br>Energy losses include tail & diode<br>reverse recovery<br> ~~oe~~|
|Eoff<br>~~rs~~|Turn-Off SwitchingLoss|—|4.2|—|||
|Etotal<br>~~rs~~<br>~~rs~~<br>~~——_——~~|Total SwitchingLoss<br>~~——_——~~|—<br>~~——_——~~|8.6|—|||
|td(on)<br>~~rs~~<br>~~rs~~<br>~~ee——_——~~|Turn-On delaytime<br>~~——_——~~|—<br>~~——_——~~|40|—|ns||
|tr<br>~~rs~~<br>~~ee——_——~~|Rise time<br>~~——_——~~|—<br>~~——_——~~|30|—|||
|td(off)<br>~~ee——_——~~|Turn-Off delaytime<br>~~——_——~~|—<br>~~——_——~~|310|—|||
|tf<br>~~——_——~~|Fall time<br>~~——_——~~|—<br>~~——_——~~|110|—|||
|Cies<br>~~——_——~~<br>~~SSS~~|Input Capacitance<br>~~——_——~~<br>~~SSS~~|—<br>~~——_——~~<br>~~SSS~~|3700<br>~~SSS~~|—<br>~~SSS~~|pF<br>~~SSS~~|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz<br>~~SSS~~|
|Coes<br>~~——_——~~<br>~~SSS~~|Output Capacitance<br>~~——_——~~<br>~~SSS~~|—<br>~~——_——~~<br>~~SSS~~|215<br>~~SSS~~|—<br>~~SSS~~|||
|Cres<br>~~SSS~~|Reverse Transfer Capacitance<br>~~SSS~~|—<br>~~SSS~~|120<br>~~SSS~~|—<br>~~SSS~~|||
|RBSOA<br>~~SSS~~<br>~~$$~~|Reverse Bias Safe Operating Area<br>~~SSS~~<br>~~$$~~|FULL SQUARE<br>~~SSS~~<br>~~$$~~|||~~SSS~~|TJ= 150°C, IC= 160A<br>VCC= 960V, Vp ≤ 1200V<br>VGE= +20V to 0V<br>~~SSS~~|
|SCSOA<br>~~$$~~|Short Circuit Safe Operating Area<br>~~$$~~|10<br>~~$$~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~|µs <br>~~ee~~|TJ= 150°C,VCC= 600V, Vp ≤ 1200V<br>VGE= +15V to 0V|
|Erec<br>~~$$~~<br>~~ee~~|Reverse RecoveryEnergyof the Diode<br>~~$$~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~<br>~~ee~~|1.8<br>~~$$~~<br>~~ee~~<br>~~ee~~|—<br>~~$$~~<br>~~ee~~<br>~~ee~~|mJ<br>~~ee~~<br>~~ee~~|TJ= 150°C<br>VCC= 600V, IF= 40A<br>VGE= 15V,Rg= 5.0<br>~~ee~~|
|trr<br>~~ee~~|Diode Reverse RecoveryTime<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|210<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~||
|Irr<br>~~ee~~|Peak Reverse RecoveryCurrent<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|21<br>~~ee~~<br>~~ee~~|—<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~||



-  R is measured at TJ of approximately 90°C. 

-  Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

-  Maximum limits are based on statistical sample size characterization. 

-  Pulse width limited by max. junction temperature. 

-  Values influenced by parasitic L and C in measurement. 

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IRG8P60N120KDPbF/IRG8P60N120KD-EPbF<br>‘_i5P,<br>100<br>For both:<br>Duty cycle : 50%<br>80 a Tj = 150°C ll<br>Tcase = 100°C<br>Gate drive as specified<br>Power Dissipation = 167W<br>60<br>TIPS<br>a Square Wave: aalll<br>40 VCC<br>I<br>20<br>Diode as specified<br>I A<br>STE EET Pt<br>0<br>0.1 1 10 100<br>Load Current  ( A )<br>**----- End of picture text -----**<br>


f , Frequency ( kHz ) 

**Fig. 1** - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 

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1000 1000<br>100<br>qa 10µsec 100<br>10<br>aa 100µsec<br>10<br>1msec<br>1<br>bine Tc = 25°C ©<br>Tj = 150°C DC<br>Single Pulse<br>EE<br>0.1 1<br>1 10 100 1000 10000 10 100 1000 10000<br>VCE (V) VCE (V)<br>Fig. 2  - Forward SOA  Fig. 3  - Reverse Bias SOA<br>TC = 25°C; TJ ≤ 150°C; VGE = 15V  TJ = 150°C; VGE = 20V<br>1000<br>1000<br>100<br>100 Tee ee Tc = -40°C<br>Tc = 25°C<br>Tc = 150°C<br>10<br>10 ofA<br>VGE = 18V<br>1<br>1.0 AS VGE = 15V Of<br>VGE = 12V<br>VGE = 10V<br>VGE = 8.0V<br>0.1<br>0.1 ttt} 0 EEE 2 4 6 8 10<br>0 2 4 6 8 10<br> VCE (V)<br> VCE (V)<br>Fig. 5  - Typ. IGBT Saturation Voltage<br>Fig. 4  - Typ. IGBT Output Characteristics<br>VGE = 15V; tp = 20µs<br>TJ = 25°C; tp = 20µs<br>ICE (A)<br>ICE (A)<br>IC (A) IC (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Saturation Voltage 

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IRG8P60N120KDPbF/IRG8P60N120KD-EPbF<br>iV#£4[DDi___R<br>1000 16<br>14 VCES = 600V<br>VCES = 400V<br>100 12<br>TA 10 |OUFE<br>10 8<br>Of<br>| 6 ee<br>1 TJ = -40 ° C 4<br>TJ = 25°C<br>TJ = 150°C 2<br>0.1 HeoWey) 0 PeEee<br>4 6 8 10 12 14 16 18 20 0 50 100 150 200 250<br> VGE (V) Q G, Total Gate Charge (nC)<br>Fig. 6  - Typ. Transfer Characteristics   Fig. 7  - Typical Gate Charge vs. VGE<br>VCE = 50V; tp = 20µs   ICE = 40A<br>16 1000<br>E OFF  @ Tj = 150°C tdOFF<br>EON @ Tj = 150°C<br>12 E RR @ Tj = 150°C tF<br>100<br>E OFF  @ Tj = 25°C tdON<br>8 E ON  @ Tj = 25°C<br>ERR  @ Tj = 25°C<br>10<br>tR<br>4<br>1<br>Pes =<br>0 0 20 40 60 80<br>0 10 20 30 40 50 60 70 80<br>IC (A)<br>IC (A)<br>Fig. 9  - Typ. Switching Time vs. IC<br>Fig. 8  - Typ. Energy Loss vs. IC<br>VCE = 600V, RG = 5.0; VGE = 15V  TJ = 150°C; VCE = 600V, RG = 5.0; VGE = 15V<br>8 E ON @  Tj = 150°C= 150°C 150°C°CC 1000<br>E OFF  @ Tj = 150°C tdOFF<br>E RR @ Tj = 150°C Tj = 150°Cj = 150°C = 150°C<br>6 EON @ Tj = 25°C<br>EOFF @ Tj = 25°C<br>ERR @ Tj = 25°C tF<br>100<br>4<br>2 =ATAT td tR ON s<br>10<br>0 = 3 6 9 12 15 18 21 24 27<br>5 7 9 11 13 15 17 19 21 23 25 27<br>RG ()<br>VGE, Gate-to-Emitter Voltage (V)<br>Energy (mJ)<br>ICE (A)<br>Energy (mJ)<br>Swiching Time (ns)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


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8<br>E ON @  Tj = 150°C= 150°C 150°C°CC<br>E OFF  @ Tj = 150°C<br>E RR @ Tj = 150°C Tj = 150°Cj = 150°C = 150°C<br>6 EON @ Tj = 25°C<br>EOFF @ Tj = 25°C<br>ERR @ Tj = 25°C<br>4<br>2 =ATAT<br>0 =<br>5 7 9 11 13 15 17 19 21 23 25 27<br>Rg ()<br>Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig. 10** - Typ. Energy Loss vs. RG **Fig. 11** - Typ. Switching Time vs. RG VCE = 600V, ICE = 40A; VGE = 15V TJ = 150°C;  VCE = 600V, ICE = 40A; VGE = 15V 4 www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                  October 30, 2014 ~~=——°°”~~ 

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IRG8P60N120KDPbF/IRG8P60N120KD-EPbF ~~___~~ 

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25 4000<br>VCC = 600V RG = 5.0<br>3500<br>Tj = 150°C RG = 10<br>24 V GE  = 15V 3000 R G = 22  AN<br>IF = 40A RG = 5 RG = 27<br>2500<br>RG = 10<br>23 RG =  2000 | |Px<br>Azz<br>RG = 27 1500 | | | |<br>22 1000 Ar [|] | TS<br>enn<br>500<br>21 ttt 0 =Pt | | |<br>200 400 600 800 1000 1200 1400 20 30 40 50 60 70 80<br>diF /dt (A/µs) IF (A)<br>IRR (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig. 12** - Typ. IRR  vs. di/dt 

**Fig. 13** - Typ. Diode ERR vs. IF TJ = 150°C 

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1000<br>-40°C<br>25°C<br>150°C<br>100<br>BES==3<br>10<br>ian<br>1 fe<br>(oe<br>0.1<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br>


**Fig. 14** - Typ. Diode Forward Voltage Drop Characteristics 

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IRG8P60N120KDPbF/IRG8P60N120KD-EPbF 

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1<br>D = 0.50<br>0.1 eT<br>eR mall<br>0.20 eeroee BEE ° Sell<br>0.10 Ri ( C/W)  i (sec)<br>0.05 R 1 R1 R 2 R2 R 3 R3 R 4R4 0.004527  0.000014<br>0.01 0.010.02 J J1 1 2 2 3  3 4  4 CC 0.079980 0.134306  0.000178 0.004032<br>Ci= iRi<br>Ci= iRi<br>= jaa ee 0.079980  0.019255<br>0.001<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Aun<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 15-   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1<br>D = 0.50 HE EETT<br>0.20 Soe ery Le Ri (°C/W)   a i (sec)<br>0.010.1 0.050.100.020.01 J J1 1 R1R1 2  R22R2 R 3 3R33  R 4 4R4 4  C C 00.245235 0.294572 .036277  00.000597 0.012360 .000132<br>Ci= iRi<br>Ci= iRi<br>0.233626  0.098387<br>Notes:<br>0.001<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>ail ( THERMAL RESPONSE ) al 2. Peak Tj  a = P dm x Zthjc + Tc<br>0.0001 ACE i coal EE |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig. 16 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 

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L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br>


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L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.1** - Gate Charge Circuit (turn-off) 

**Fig.C.T.2** - RBSOA Circuit 

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4X<br>DC VCC<br>DUT<br>RSH<br>**----- End of picture text -----**<br>


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diode clamp /<br>DUT<br>L<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br>


**Fig.C.T.3** - S.C. SOA Circuit 

**Fig.C.T.4** - Switching Loss Circuit (Board Stray Inductance 180nH) 

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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075µF<br>E sense<br>#7<br>E force<br>**----- End of picture text -----**<br>


**Fig.C.T.5** - BVCES Filter Circuit 

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800 240<br>eo<br>700 210<br>VCE<br>600 180<br>fF<br>500 150<br>ICE<br>ff<br>400 120<br>ff<br>300 90<br>ff<br>200 60<br>ff<br>100 30<br>| Le<br>0 0<br>oo<br>-100 -30<br>-20.00 -10.00 0.00 10.00<br>time (µs)<br>Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br>


**Fig. WF1** - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 

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## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO  135H<br>IN THE ASSEMBLY LINE "H"<br>. 56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRG8P60N120KDPbF/IRG8P60N120KD-EPbF 

## TO-247AD Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AD Part Marking Information 

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TO-247AD package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

Submit Datasheet Feedback                  October 30, 2014 

www.irf.com © 2014 International Rectifier 

10 

1éaR 

IRG8P60N120KDPbF/IRG8P60N120KD-EPbF 

## **Qualification Information[†  ]** 

|**Qualification Information[†  ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
||TO-247AD|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

11 www.irf.com ~~coax~~ 

~~_~~ 

Submit Datasheet Feedback                  October 30, 2014 

11 www.irf.com © 2014 International Rectifier 



## Links

- [View this product on Novapart](https://novapart.co/products/IRG8P60N120KDPBF/igbt-n-ch-100-a-17-v-420-w-12-kv-to-247ac-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irg8p60n120kdpbf/igbt-single-1-2kv-100a-to-247ac/dp/2580047)
---

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