# TRANSISTOR, BIPOLAR, N CHANNEL, 1.4KV, T

![Product image](https://novapart.co/image/farnell:2424298/)

**URL**: https://novapart.co/products/IRG7PK35UD1PBF/transistor-bipolar-n-channel-14kv-t
**SKU**: IRG7PK35UD1PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4600
**Stock**: 10+

## Description

TRANSISTOR, BIPOLAR, N CHANNEL, 1.4KV, TO-247AC; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:167W; Collector Emitter Voltage V

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2014) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 167W |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 1.4kV |
| Collector Emitter Saturation Voltage | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2424298/)

International 

IRG7PK35UD1PbF IRG7PK35UD1-EPbF 

## _**Insulated Gate Bipolar Transistor  with Ultrafast Soft Recovery Diode**_ 

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VCES = 1400V  C C  C<br>IC = 20A, TC =100°C<br>TJ(max) = 150°C<br>G E  E<br>VCE(ON) typ. = 2.0V @ IC = 20A G  [C ] G  [C ]<br>E<br>— IRG7PK35UD1PbF  IRG7PK35UD1‐EPbF<br>n-channel<br>TO‐247AC  TO‐247AD<br>Applications<br> Induction heating  G  C  E<br> Microwave ovens  Gate  Collector  Emitter<br>**----- End of picture text -----**<br>


-  Soft switching applications 

## **Features** 

Low VCE(ON), ultra-low VF, and turn-off soft switching losses 

Positive VCE (ON) temperature coefficient and tight distribution of parameters Lead-free, RoHS compliant ~~Cn~~ 

## **Benefits** 

High efficiency in a wide range of soft switching applications and switching frequencies Excellent current sharing in parallel operation Environmentally friendly 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRG7PK35UD1PbF|TO-247AC|Tube|25|IRG7PK35UD1PbF|
|IRG7PK35UD1-EPbF|TO-247AD|Tube|25|IRG7PK35UD1-EPbF|



## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~| ns~~ VCES Collector-to-Emitter Voltage 1400 V ~~I~~ IC @ TC = 25°C Continuous Collector Current 40 ~~TT~~ IC @ TC = 100°C Continuous Collector Current 20 A ~~TT~~ ICM ~~**ee**~~ Pulse Collector Current, VGE = 15V  ~~es~~ 200 ~~——_TFTFTFTEDNM’"’”—---’-11—~~ ILM Clamped Inductive Load  Current, VGE = 20V  80 IF @ TC = 25°C Diode Continuous Forward Current 40 ~~Pe~~ IF @ TC = 100°C ~~nn~~ Diode Continuous Forward Current 20 ~~7 a~~ VGE Continuous Gate-to-Emitter Voltage ±30 V ~~TT——.-——->-$-—)-~~ PPDD @ T@ TCC = 2= 1005°C°C ~~eee~~ Maximum Power Dissipation Maximum Power Dissipation ~~dt~~ 167 67 W TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) ~~ppee~~ Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) **Thermal Resistance Parameter Min. Typ. Max. Units** RJC  (IGBT) Thermal Resistance Junction-to-Case (IGBT)  ––– ––– 0.75 RJC  (Diode) Thermal Resistance Junction-to-Case (Diode)  ––– ––– 1.4 °C/W RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RJA Thermal Resistance, Junction-to-Ambient  (typical socket mount) ––– 40 ––– 

1 www.irf.com ~~cs~~ 

~~_~~ 

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## ~~TOR~~ 

## IRG7PK35UD1PbF/IRG7PK35UD1-EPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ. **|**Max****Units**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge (turn-on)|—|65|98|nC<br>|IC= 20A<br>VGE= 15V<br>VCC= 600V|
|g<br>Qge|Gate-to-Emitter Charge (turn-on)|—|15|23|||
|ge<br>Qgc<br>~~ee~~|Gate-to-Collector Charge (turn-on)<br>|—<br>|25<br>|38<br>|||
|gc<br>Eoff<br>~~ee~~|Turn-Off Switching Loss<br>|—<br>|0.65<br>|0.90<br>|mJ <br>|IC= 20A, VCC= 600V, VGE= 15V<br>RG= 10, TJ= 25°C<br>Energy losses include tail|
|td(off)<br>~~eei~~|Turn-Off delay time<br>~~i~~|—<br>~~i~~|150<br>~~i~~|170<br>~~i~~|ns<br>~~i~~||
|d(off)<br>tf<br>~~i~~|Fall time<br>~~i~~|—<br>~~i~~|75<br>~~i~~|95<br>~~i~~|||
|Eoff <br>~~|~~<br>~~a~~|Turn-Off Switching Loss<br>~~|~~<br>|—<br>~~|~~<br>~~ee~~<br>|1.3<br>~~|~~<br>~~ee~~<br>|—<br>~~|~~<br>~~e~~<br>|mJ<br>~~|~~<br>~~ee~~|IC= 20A, VCC= 600V, VGE= 15V<br>RG= 10, TJ= 150°C<br>Energy losses include tail<br>~~|~~<br>~~e~~|
|td(off)<br>~~a~~<br>~~a~~|Turn-Off delaytime<br>~~a~~<br>|—<br>~~a~~<br>~~ee~~<br>|180<br>~~a~~<br>~~ee~~<br>|—<br>~~a~~<br>~~e~~<br>|ns<br>~~a~~<br>~~ee~~||
|tf<br>~~a~~<br>~~a~~|Fall time<br>~~a~~<br>|—<br>~~a~~<br>~~ee~~<br>|180<br>~~a~~<br>~~ee~~<br>|—<br>~~a~~<br>~~e~~<br>|||
|Cies<br>~~a~~|Input Capacitance<br>~~es~~|—<br>~~ee~~<br>~~es~~|2200<br>~~ee~~<br>~~es~~|—<br>~~e~~<br>~~es~~|pF<br>~~ee~~|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~e~~|
|Coes<br>~~a ~~<br>~~I~~|Output Capacitance<br> ~~es~~<br>~~I~~|—<br>~~ee~~<br>~~es~~<br>~~I~~|70<br>~~ee ~~<br>~~es~~<br>~~I~~|—<br> ~~e~~<br>~~es~~|||
|Cres<br>~~I~~|Reverse Transfer Capacitance<br>~~I~~|—<br>~~I~~|35<br>~~I~~|—|||
|RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 150°C, IC= 80A<br>VCC= 1120V, Vp ≤ 1400V<br>RG= 10,VGE= +20V to 0V|



## **Notes:** 

-  FBSOA operating conditions only. 

-  Pulse width limited by max. junction temperature. 

-  VCC = 80% (VCES), VGE = 20V, RG = 10. 

-  R is measured at TJ of approximately 90°C. 

-  Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 

-  Maximum limits are based on statistical sample size characterization. 

2 ~~ee~~ 

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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>TOR<br>40 200<br>30 150<br>BNE<br>20 PIN 100<br>|<br>10 BREXNG 50<br>0 EEEEN 0<br>25 50 75 100 125 150 25 50 75 100 125 150<br> TC (°C)  TC (°C)<br>Ptot (W)<br>IC (A)<br>**----- End of picture text -----**<br>


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200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br>


**Fig. 2** - Power  Dissipation vs. Case Temperature 

**Fig. 1** - Maximum DC Collector Current vs. Case Temperature 

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1000<br>100<br>10<br>1<br>10 100 1000 10000<br>VCE (V)<br>IC (A)<br>**----- End of picture text -----**<br>


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5.0 1000<br>IC = 600µA<br>4.6<br>J | | |<br>100<br>4.2 aN<br>3.8<br>10<br>P| NE<br>3.4<br>P| INS<br>1<br>||<br>3.0 10 100 1000<br>| | ISN<br>25 50 75 100 125 150<br>VCE (V)<br>TJ , Temperature (°C)<br>Fig. 3  - Typical Gate Threshold Voltage  Fig. 4  - Reverse Bias SOA<br>vs. Junction Temperature  TJ = 150°C; VGE = 20V<br>80 80<br>VGE = 18V VGE = 18V<br>60 aie VGE = 15V 60 tft V GE = 15V<br>V GE  = 12V VGE = 12V<br>VGE = 10V VGE = 10V<br>VGE = 8.0V VGE = 8.0V<br>40 40<br>te nv inen<br>20 So 20 br<br>0 ALI 0 Att<br>0 2 4 6 8 10 0 2 4 6 8 10<br> VCE (V)  VCE (V)<br>IC (A)<br>VGE(th), Gate Threshold Voltage<br>ICE (A) ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs 

**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 

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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>TOR<br>80 80<br>VGE = 18V 70<br>VGE = 15V 25°C<br>60 V GE  = 12V 60 150°C<br>VGE = 10V<br>VGE = 8.0V 50<br>40 40<br>Te<br>30<br>20 20<br>WW a<br>10<br>0 Val 0 —f——<br>0 2 4 6 8 10 0.0 1.0 2.0 3.0<br> VCE (V)<br>ICE (A) IF (A)<br>**----- End of picture text -----**<br>


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80<br>70<br>25°C<br>60 150°C<br>50<br>40<br>30<br>20<br>a<br>10<br>—f——<br>0<br>0.0 1.0 2.0 3.0<br> VF (V)<br>Fig. 8  - Typ. Diode Forward Voltage Drop<br>Characteristics<br>12<br>10<br>ICE = 40A<br>8 ee I CE  = 20A<br>ICE = 10A<br>6<br>4 tttWei<br>2 |<br>0 =—=_<br>5 10 15 20<br> VGE (V)<br>Fig. 10  - Typical VCE vs. VGE<br>TJ = 25°C<br>80<br>60<br>Pf<br>40<br>TT yy<br>TJ = 25°C<br>20 T J  = 150°C<br>;<br>0 aeraeYo<br>2 4 6 8 10 12<br> VGE (V)<br>VCE (V)<br>IF (A)<br>ICE (A)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typ. Diode Forward Voltage Drop Characteristics 

**Fig. 7** - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs 

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12<br>10<br>8 Ee ICE = 40A<br>ICE = 20A<br>6 ICE = 10A<br>4 aie<br>2 (=<br>0 ==<br>5 10 15 20<br> VGE (V)<br>Fig. 9  - Typical VCE vs. VGE<br>TJ = -40°C<br>12<br>10<br>8 th ICE = 40A<br>ICE = 20A<br>6 ICE = 10A<br>4 it —<br>2<br>=S—<br>0 ELrT<br>5 10 15 20<br> VGE (V)<br>Fig. 11  - Typical VCE vs. VGE<br>TJ = 150°C<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>


**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 

4 www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                       February 27, 2014 ~~SSOOOO~~ 

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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>i #£4vR —_____<br>2.5 1000<br>2.0 td OFF<br>EOFF<br>1.5<br>100 t F<br>1.0<br>0.5<br>0.0 Zo 10 TE<br>0 10 20 30 40 0 10 20 30 40<br>IC (A) IC (A)<br>Fig. 13  - Typ. Energy Loss vs. IC Fig. 14  - Typ. Switching Time vs. IC<br>TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V  TJ = 150°C; VCE = 600V, RG = 10; VGE = 15V<br>2.6 10000<br>2.2<br>1000<br>EOFF tdOFF<br>1.8<br>100 tF<br>1.4<br>1.0 10<br>0 20 40 60 80 100 0 20 40 60 80 100<br>Rg () RG ()<br>Energy (mJ)<br>Swiching Time (ns)<br>Energy (mJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br>


**Fig. 15** - Typ. Energy Loss vs. RG TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V 

**Fig. 16** - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 20A; VGE = 15V 

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16<br>14 V CES  = 600V 600V<br>VCES = 400VCES = 400V = 400V<br>12<br>10<br>8<br>FEE<br>6<br>4 GEEEE EE EE<br>2<br>0<br>0 PCE 10 20 30 40 50 60 70<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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10000 16<br>Cies 14 V CES  = 600V 600V<br>VCES = 400VCES = 400V = 400V<br>1000 12<br>10<br>100 8<br>Coes<br>Tr} = FEE<br>6<br>10 See 4 GEEEE EE EE<br>Cres<br>2<br>1 0<br>0 Eaneee 100 200 300 400 500 600 0 PCE 10 20 30 40 50 60<br>VCE (V) Q G, Total Gate Charge (nC)<br>Capacitance (pF)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 18** - Typical Gate Charge vs. VGE 

**Fig. 17** - Typ. Capacitance vs. VCE 

VGE= 0V; f = 1MHz ICE = 20A 

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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF 

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1<br>D = 0.50<br>ee<br>oy AAT<br>0.20<br>0.1 Sat ae ee aa all Ri (°C/W) i (sec)<br>0.10<br>R 1 R1 R 2 R2 R 3 R3 R 4 R4 R 5 R 5 0.009435  0.00000971<br>0.05  J J  C C 0.134412  0.00005224<br>11 2 2 3 3 4 4 5 5 0.182875  0.00033830<br>0.02<br>Ci= iRi<br>P| 0.01 Ci= iRi 0 0.286292  0.00397000<br>0.01<br>=) PP a 0.136974  0.02151000<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>; es<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 19 -   Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>1<br>D = 0.50<br>0.20 Ri (°C/W) i (sec)<br>0.1 Tr 0.05 0.10 0.020.01 Tlor J ma J1Ci=  1 LT iRi R1 R1 2 R 2 2 R2 Td R 3 3 R  33  R 4 4R 4 4 C C dL 0.017209  0.520952  0.550676  0.000012  0.000591  0.004389<br>Ci= iRi<br>0.01 er | 0.309755  0.032009<br>Notes:<br>SINGLE PULSE<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>Beil 2. Peak Tj = P dm x Zthjc + Tc _T<br>0.001 Ait om EEeT<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 20 -   Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)<br>Thermal Response ( Z  thJC )<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF<br>LR#45<br>L<br>80 V +<br>- DUT VCC<br>Rg<br>. -aft [hE<br>Fig.C.T.1  - Gate Charge Circuit (turn-off)  Fig.C.T.2  - RBSOA Circuit<br>diode clamp / C force<br>DUT<br>L<br>100K<br>D1 22K<br>-5V C sense<br>DUT<br>DUT / VCC G force 0.0075µF<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br>


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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075µF<br>E sense<br>E force<br>**----- End of picture text -----**<br>


**Fig.C.T.3** - Switching Loss Circuit 

**Fig.C.T.4** - BVCES Filter Circuit 

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800 80<br>tf<br>700 70<br>ee<br>600 60<br>ee<br>500 50<br>400 ee 40<br>ee<br>300 30<br>90% ICE<br>200 20<br>Ko<br>100 10<br>5% VCE 10% ICE<br>0 0<br>Eoff Loss<br>-100 -10<br>-1.4 -0.4 0.6 1.6 2.6<br>time(µs)<br>Fig. WF1  - Typ. Turn-off Loss Waveform<br>@ TJ = 150°C using Fig. CT.3<br> (V)  (A)<br>VCE ICE<br>**----- End of picture text -----**<br>


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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

Notes: This part marking information applies to devices produced after 02/26/2001 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO Po  135H d<br>IN THE ASSEMBLY LINE "H"<br>_ —- 56           57<br>DATE CODE<br>ASSEMBLY YEAR 1 =  2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>


TO-247AC package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 www.irf.com        © 2014 International Rectifier ~~| i—_~~ 

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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF 

## TO-247AD Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AD Part Marking Information 

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E X A M P L E : T H IS  IS  A N  IR G P 3 0 B 1 2 0 K D -E<br>W IT H  A S S E M B L Y  P A R T  N U M B E R<br>L O T  C O D E  5 6 5 7 IN T E R N A T IO N A L po @<br>A S S E M B L E D  O N  W W  3 5 , 2 0 0 0 R E C T IF IE R<br>L O G O IRGP30B1IeaR 20KD  0 3 5 H -E |<br>IN  T H E  A S S E M B L Y  L IN E  "H "<br>5 6            5 7<br>D A T E  C O D E<br>A S S E M B L Y YE A R  0  =  2 0 0 0<br>N o te : "P " in  a s s e m b ly  lin e  p o s itio n<br>L O T  C O D E W E E K  3 5<br>in d ic a te s  "L e a d -F re e "<br>L IN E  H<br>**----- End of picture text -----**<br>


TO-247AD package is not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRG7PK35UD1PbF/IRG7PK35UD1-EPbF 

## **Qualification Information[†  ]** 

|**Qualification Information[†  ]**|||
|---|---|---|
|**Qualification Level**|Consumer††<br>(per JEDEC JESD47F)†††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
||TO-247AD|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site - 

- http://www.irf.com/product info/reliability 

††      Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: - http://www.irf.com/whoto call/salesrep/ 

- †††    Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

10 ~~_~~ 

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---

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