# IGBT, 45 A, 3.2 V, 200 W, 1.2 kV, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:2776855/)

**URL**: https://novapart.co/products/IRG4PH50UPBF/igbt-45-a-32-v-200-w-12-kv-to-247ac-3-pins
**SKU**: IRG4PH50UPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.2800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 45A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 3.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776855/)

PD - 95191 

## IRG4PH50UPbF 

## INSULATED GATE BIPOLAR TRANSISTOR 

## Ultra Fast Speed IGBT 

## **Features** 

- UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz  in resonant mode 

- New  IGBT design provides tighter parameter distribution and higher efficiency than previous generations 

- Optimized for power conversion; SMPS, UPS and welding 

**==> picture [195 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>VCES = 1200V<br>V =  2.78V<br>G CE(on) typ.<br>E @VGE = 15V, IC = 24A<br>n-channel<br>**----- End of picture text -----**<br>


- Industry standard TO-247AC package 

- Lead-Free 

## **Benefits** 

- Higher switching frequency capability  than competitive IGBTs 

- Highest efficiency available 

- Much  lower conduction losses than MOSFETs 

- More efficient than short circuit rated IGBTs 

TO-247AC 

## **Absolute Maximum Ratings** 

|**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Breakdown Voltage<br>1200<br>V<br>IC@ TC= 25°C<br>Continuous Collector Current<br>45<br>IC@ TC= 100°C<br>Continuous Collector Current<br>24<br>A<br>ICM<br>Pulsed Collector Current<br>180<br>ILM<br>Clamped Inductive Load Current<br>180<br>VGE<br>Gate-to-Emitter Voltage<br>± 20<br>V<br>EARV<br>Reverse Voltage Avalanche Energy<br>170<br>mJ<br>PD@ TC= 25°C<br>Maximum Power Dissipation<br>200<br>PD@ TC= 100°C<br>Maximum Power Dissipation<br>78<br>TJ<br>Operating Junction and<br>-55  to + 150<br>TSTG<br>Storage Temperature Range<br>SolderingTemperature, for 10 seconds<br>300(0.063 in.(1.6mm)from case)<br>°C<br>Mounting torque, 6-32 or M3 screw.<br>10 lbf•in (1.1N•m)<br>W<br>~~a~~<br>~~a~~<br>es<br>ns<br>es~~eo~~<br>Re<br>><br>es<br>nD<br>Rs<br>©<br>a<br>~~esee~~<br>~~po~~<br>~~es~~<br>~~esen~~|**Parameter**<br>**Max.**<br>**Units**<br>VCES<br>Collector-to-Emitter Breakdown Voltage<br>1200<br>V<br>IC@ TC= 25°C<br>Continuous Collector Current<br>45<br>IC@ TC= 100°C<br>Continuous Collector Current<br>24<br>A<br>ICM<br>Pulsed Collector Current<br>180<br>ILM<br>Clamped Inductive Load Current<br>180<br>VGE<br>Gate-to-Emitter Voltage<br>± 20<br>V<br>EARV<br>Reverse Voltage Avalanche Energy<br>170<br>mJ<br>PD@ TC= 25°C<br>Maximum Power Dissipation<br>200<br>PD@ TC= 100°C<br>Maximum Power Dissipation<br>78<br>TJ<br>Operating Junction and<br>-55  to + 150<br>TSTG<br>Storage Temperature Range<br>SolderingTemperature, for 10 seconds<br>300(0.063 in.(1.6mm)from case)<br>°C<br>Mounting torque, 6-32 or M3 screw.<br>10 lbf•in (1.1N•m)<br>W<br>~~a~~<br>~~a~~<br>es<br>ns<br>es~~eo~~<br>Re<br>><br>es<br>nD<br>Rs<br>©<br>a<br>~~esee~~<br>~~po~~<br>~~es~~<br>~~esen~~||
|---|---|---|
|**Thermal Resistance**|||
|**Parameter**<br>**Typ.**<br>**Max.**|**Units**||
|RθJC<br>Junction-to-Case<br>–––<br>0.64|||
|RθCS<br>Case-to-Sink, Flat, Greased Surface<br>0.24<br>–––|°C/W||
|RθJA<br>Junction-to-Ambient,  typical socket mount<br>–––<br>40|||
|Wt<br>Weight<br>6 (0.21)<br>–––|g (oz)||
|www.irf.com|1||
||04/26/04||



## **Thermal Resistance** 

## IRG4PH50UPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|i<br>ee|**Parameter**<br>rs<br>Gs|**Min.**<br>tdrr<br>Gs|**Typ. **<br>rr<br>Gs|**Max.**<br>rr<br>Gs|**Units**<br>Gs|**Conditions**<br>Gs|
|---|---|---|---|---|---|---|
|V(BR)CES<br>i<br>ee<br>ee|Collector-to-Emitter Breakdown Voltage<br>rs <br>Gs<br>oe|1200<br> tdrr<br>Gs<br>oe|—<br>rr<br>Gs<br>|—<br>rr<br>Gs|V<br>Gs|VGE= 0V, IC= 250µA<br>Gs|
|V(BR)ECS<br>ee<br>ee<br>es|Emitter-to-Collector Breakdown Voltage<br>Gs<br>oe|18<br>Gs<br>oeSe|—<br>Gs<br>Se|—<br>Gs|V<br>Gs<br>|||VGE= 0V, IC= 1.0A<br>Gs|
|∆V(BR)CES/∆TJ<br>ee<br>es|Temperature Coeff. of Breakdown Voltage<br>oe|—<br>oeSe<br>**|**|1.20<br>Se<br>**|**|—|V/°C<br>|||VGE= 0V, IC= 1.0mA|
|VCE(ON)<br>es|Collector-to-Emitter Saturation Voltage<br><br>es|—<br>Se<br>**||**|2.56<br>Se<br>**||**|3.5|V<br>||<br>es|IC= 20A<br>IC= 24A                          VGE= 15V<br>IC= 45A<br>See Fig.2, 5<br>IC= 24A , TJ= 150°C|
|||—<br>**||**<br>**|**|2.78<br>**||**<br>**|**|3.7|||
|||—<br>**|**<br>**||**|3.20<br>**|**<br>**||**|—|||
|||—<br>**||**<br>es|2.54<br>**||**<br>es|—<br>es|||
|VGE(th)|Gate Threshold Voltage<br>es|3.0<br>**|**<br>es|—<br>**|**<br>es|6.0<br>es||VCE= VGE, IC= 250µA|
|∆VGE(th)/∆TJ<br>~~QQ~~|Temperature Coeff. of Threshold Voltage<br>~~QQ~~|—<br>~~QQ~~|-13<br>~~QQ~~|—<br>~~QQ~~|mV/°C <br>~~QQ~~|VCE= VGE, IC= 250µA<br>~~QQ~~|
|gfe<br>~~DQ~~|Forward Transconductance<br>~~DQ~~|23<br>~~DQ~~|35<br>~~DQ~~|—<br>~~DQ~~|S<br>~~DQ~~|VCE =100V, IC= 24A<br>~~DQ~~|
|ICES<br>~~es~~|Zero Gate Voltage Collector Current<br>~~|~~<br>~~sn~~|—<br>~~oe~~<br>||—<br>~~oe~~<br>||250<br>~~oe~~<br>|µA<br>~~oe~~<br>~~|~~|VGE= 0V, VCE= 1200V|
|||—<br>~~oe~~<br>|<br>~~|~~|—<br>~~oe~~<br>|~~|~~|2.0<br>~~oe~~<br>~~|~~||VGE= 0V, VCE= 24V, TJ= 25°C|
|||—<br>~~oe~~<br>|<br>~~|~~|<br>~~sn~~|—<br>~~oe~~<br>|~~|~~<br>rn|5000<br>~~oe~~<br>~~|~~||VGE= 0V, VCE= 1200V, TJ= 150°C|
|IGES<br>~~es~~|Gate-to-Emitter Leakage Current<br>~~|~~<br>~~sn~~|—<br><br>~~| ~~|<br>~~sn~~|—<br>~~|~~<br>rn|±100<br>~~|~~|nA<br>~~|~~|VGE= ±20V|
|**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**<br> |<br>~~es~~<br>~~sn~~<br>rn<br>RR|||||||
|RR|**Parameter**<br>RR|**Min.**<br><br>ee|**Typ. **<br>|**Max.**<br>|**Units**|**Conditions**|
|Qg<br>RR|Total Gate Charge (turn-on)<br>RRee|—<br>ee<br>ee<br>ee|160<br>ee|250<br>ee|nC|IC= 24A<br>VCC= 400V<br>See Fig. 8<br>VGE= 15V|
|Qge|Gate - Emitter Charge (turn-on)<br>ee|—<br>ee<br>ee<br>ee|27<br>ee|40<br>ee|||
|ge<br>Qgc|Gate - Collector Charge(turn-on)<br>ee|—<br>ee<br>ee|53<br>ee|83<br>ee|||
|td(on)<br>Re|Turn-On Delay Time<br>~~a~~<br>|—<br>~~a~~<br>ee<br>|35<br>~~a~~<br>|—|ns|TJ= 25°C<br>IC= 24A,  VCC= 960V<br>VGE= 15V,  RG= 5.0Ω<br>Energy losses include "tail"<br>See Fig. 9, 10, 14|
|d(on)<br>tr<br>Re|Rise Time<br>~~ee~~<br>|—<br>~~ee~~<br>ee<br>|15<br>~~ee~~<br>|—|||
|td(off)<br>Re<br>ee|Turn-Off Delay Time<br>~~ee~~|—<br>ee<br>~~ee~~|200<br>~~ee~~|350|||
|d(off)<br>tf<br>Re<br>ee<br>Rs|Fall Time<br>~~ee~~|—<br>ee<br>~~ee~~|290<br>~~ee~~|500|||
|Eon<br><br>ee<br>Rs<br>es|Turn-On Switching Loss<br>~~ee~~<br>ee|—<br>~~ee~~<br>ee|0.53<br>~~ee~~<br>ee|—<br>ee|mJ||
|Eoff<br>Rs<br>es|Turn-Off Switching Loss<br>ee|—<br>ee|1.41<br>ee|—<br>ee|||
|Ets<br>es<br>a|Total Switching Loss<br>ee<br>|—<br>ee<br><br>es|1.94<br>ee<br>|2.6<br>ee<br>|||
|td(on)<br>|Turn-On Delay Time<br> es|—<br>es<br>es|31<br>es|—<br>es|ns|TJ= 150°C<br>IC= 24A,  VCC= 960V<br>VGE= 15V,  RG= 5.0Ω<br>Energy losses include "tail"<br>See Fig. 11, 14<br>e|
|d(on)<br>tr|Rise Time<br>a|—<br>es<br>a<br>ee|18<br>a<br>ee|—<br>a<br>ee|||
|r<br>td(off)|Turn-Off Delay Time<br>ee|—<br>ee<br>ee|320<br>ee<br>ee|—<br>ee<br>ee|||
|tf<br>es|Fall Time<br>**e**e|—<br>ee<br>e|280<br>ee <br>e|—<br> ee<br>e|||
|Ets<br>es|Total Switching Loss<br>**e**e<br>e|—<br>e<br>e|5.40<br>e<br>e|—<br>e<br>e|mJ<br>e||
|Eon<br>es<br>+++<br>ee|Turn-On Switching Loss<br>**e**e<br>+++<br>|—<br>e<br>+++<br>|0.35<br>e<br>+++<br>|—<br>e<br>+++<br>|mJ|TJ= 25°C,VGE= 15V,  RG= 5.0Ω<br>IC= 20A,  VCC= 960V<br>Energy losses include "tail"<br>See Fig. 9, 10, 11, 14,      TJ= 150°C|
|Eoff<br>+++<br>ee|Turn-Off Switching Loss<br>+++<br>|—<br>+++<br>|1.43<br>+++<br>|—<br>+++<br>|||
|Ets<br>eea<br>es|Total Switching Loss<br>a<br>||—<br>a<br>||1.78<br>a<br>|2.9<br>a<br>|||
|||—<br>a<br>||||4.56<br>a<br>|||—<br>a<br>|||||
|LE<br>es<br>Rs|Internal Emitter Inductance<br>||—<br>||||13<br>|||—<br>|||nH|Measured 5mm from package|
|Cies<br>es<br>Rs<br>Re|Input Capacitance<br><br>es|—<br>||<br>es|3600<br>||<br>es|—<br>||<br>es|pF|VGE= 0V<br>VCC= 30V<br>See Fig. 7<br>ƒ = 1.0MHz|
|Coes<br>Rs<br>Re<br>ee|Output Capacitance<br>es|—<br>es|160<br>es|—<br>es|||
|Cres<br>Re<br>ee|Reverse Transfer Capacitance<br>es|—<br>es|31<br>es|—<br>es|||



**Notes:** 

- @® Repetitive rating; VGE = 20V, pulse width limited by Repetitive rating; pulse width limited by maximum max. junction temperature. ( See fig. 13b ) junction temperature. 

- @ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0 Ω ,[®] (See fig. 13a) ) 

- Pulse width ≤ 80µs; duty factor ≤ 0.1%. 

- Pulse width 5.0µs, single shot. 

www.irf.com 

2 

## IRG4PH50UPbF 

**==> picture [437 x 487] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>For both: Triangular wave:<br>Duty cycle: 50%<br>T   = 125°CJ I<br>T        = 90°C<br>sink<br>G ate drive as specified<br>Power Dissipation = 40W Clam p voltage:<br>40 80% of rated<br>| | PW __ 4<br>Squa re wave:<br>60% of rated<br>         voltage<br>20 F T I NE NUE |<br>Tn HE DNNUIE LLL<br>Ideal diodes<br>T E TPsTT |<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1  - Typical Load Current vs. Frequency<br>  (Load Current = IRMS of fundamental)<br> 1000  1000<br>es ee ee Hf} yt fp pt yf<br> 100 240  100 2<br>T  = 150  CJ o<br>——= a seas F UE<br>ee Ae r+ AATEEE<br>T  = 150  CJ o<br>p f FL IAA tt ft i tt yt<br> 10 ey / eee  10 A| Att<br>T  = 25  CJ o T  = 25  CJ o<br>7 S e<br>V      = 15VGE V      = 50VCC<br> 1 LY/A n 20µs PULSE WIDTH e  1 P/E VEL LLL 5µs PULSE WIDTH<br> 1  10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Emitter Voltage (V)CE V     , Gate-to-Emitter Voltage (V)GE<br>Load Current (A)<br>C C<br>I   ,  Collector-to-Emitter Current (A) I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** - Typical Output Characteristics 

**Fig. 3** - Typical Transfer Characteristics 

www.irf.com 

3 

## IRG4PH50UPbF 

**==> picture [433 x 478] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 4.0<br>V      = 15VGE I   =       AC 48<br>80 us PULSE WIDTH<br>Ki fi tt Et td a<br>40<br>BNES Eee pT<br>3.5<br>HARES LL<br>30<br>Pi EE R e<br>tT IN | SET I   =       AC 24<br>3.0<br>TTT ST AUD Se<br>20<br>ptt tt PNET NEE EEE<br>I   =       AC 12<br>if tt tN 2.5 PLLER LE<br>10<br>TOLL NL e e<br>0 PEELE TTT Nn 2.0 PEE EE EEL EEE EL<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (    C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4  - Maximum Collector Current vs. Case Fig. 5  - Typical Collector-to-Emitter  Voltage<br>Temperature vs. Junction Temperature<br> 1<br>Ee ee ee ee ee  _——e ee ee ee ee<br>S 0.50 S ee Th<br>0.20 Be<br>0.1 r eoe<br>0.10<br>a ==... Seell<br>0.05<br>0.02<br>a 0.01 SINGLE PULSE e e ee ee PDM<br>0.01 eee (THERMAL RESPONSE) TT<br>t 1<br>E R t 2<br>Notes:<br>a ee eel 1. Duty factor D = eet t   / t1 2<br>ell 2. Peak TJ = PDM x  Z thJC + TC<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


**Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRG4PH50UPbF 

**==> picture [212 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
7000<br>VGE = 0V, f = 1MHz<br>6000 |_|r_| CCiesres == CCgegc + Cgc , C      SHORTEDce<br>CK Coes = Cce + Cgc<br>5000 |<br>Cies<br>P S<br>4000 es<br>a )<br>3000<br>PROC LLELT<br>NS |<br>2000 Coes<br>SS H<br>Se<br>1000 Cres<br>a<br>ro WO<br>0 P A NS<br> 1  10  100<br>V     , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [202 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>VCC = 400V<br>I C = 24A Pt tte Lt<br>16 Pf itt tL<br>Ft fT | tty | bE<br>12 Sean 4ee<br>LA<br>Pi TTT Eye |<br>8 TP TTTTT<br>H+4<br>| p e | | tt<br>T nn<br>4 ATT<br>0 AEE<br>0 40 80 120 160 200<br>Q   , Total Gate Charge (nC)G<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7 -** Typical Capacitance vs. Collector-to-Emitter Voltage 

**Fig. 8** - Typical Gate Charge vs. Gate-to-Emitter Voltage 

**==> picture [235 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
> |<br>w ea<br>LL<br>PT tT tT tT | ty yt<br>fy<br>0) 10 20 30 40 50<br>Ω<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typical Switching Losses vs. Gate Resistance 

**Fig. 10** - Typical Switching Losses vs. Junction Temperature 

www.irf.com 

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## IRG4PH50UPbF 

**==> picture [204 x 134] intentionally omitted <==**

**----- Start of picture text -----**<br>
‘0 P T PyBREAPT Law<br>PF} Tt Tt PAWA ft<br>PrP TAP<br>P| | Pre yf df |<br>0 EMER<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


**Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current 

**==> picture [203 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000 V      = 20VGE nsaot<br>erry T      = 125  CJ o HE<br>Sgt eG a<br> 100<br>7)Se sit meet|tMsemen meat<br>Seay ait| aii| ait| aT<br> 10<br>EE|<br>Oy eee eeeeere eerie |e<br>SAFE OPERATING AREA<br> 1 Po| | | |<br> 1  10  100  1000  10000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


**Fig. 12** - Turn-Off SOA 

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## IRG4PH50UPbF 

**==> picture [415 x 491] intentionally omitted <==**

**----- Start of picture text -----**<br>
L D.U.T.<br>50V V  *C 0 - 960V RL = 4 X I960VC@25°C<br>1000V 480µF<br>960V<br>(2)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V pow er supply, pulse width and inductor<br>   w ill increase to obtain rated Id.<br>Fig. 13a  - Clamped Inductive Fig. 13b  - Pulsed Collector<br>Load Test Circuit Current Test Circuit<br>I C<br>L<br>Driver* D.U.T. Fig. 14a  - Switching Loss<br>fs, THO VC —\ Test Circuit<br>50V<br>1000V<br>* Driver same type<br>LL wk «ag<br>  as D.U.T., VC = 960V<br>®<br>90%<br>10%<br>ns<br>VC<br>90% t d (off) Fig. 14b  - Switching Loss<br>Waveforms<br>I C 5% 1 0%<br>t r t f<br>t d(o n ) t=5µs<br>E o n E o ff<br>E   = (E     +E     )ts        o n       o ff<br>**----- End of picture text -----**<br>


www.irf.com 

7 

## IRG4PH50UPbF 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

**==> picture [374 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO  035H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line a DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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