# IGBT, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:8650691/)

**URL**: https://novapart.co/products/IRG4PH40UPBF/igbt-41-a-243-v-160-w-12-kv-to-247ac-3-pins
**SKU**: IRG4PH40UPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4400
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | IRG4 |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 41A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2.43V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650691/)

PD - 95187 

## IRG4PH40UPbF 

## INSULATED GATE BIPOLAR TRANSISTOR 

## Ultra Fast Speed IGBT 

## **Features** 

- UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz  in resonant mode 

- New  IGBT design provides tighter parameter distribution and higher efficiency than previous generations 

- Optimized for power conversion; SMPS, UPS and welding 

**==> picture [195 x 96] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>VCES = 1200V<br>V =  2.43V<br>G CE(on) typ.<br>E @VGE = 15V, IC = 21A<br>n-channel<br>**----- End of picture text -----**<br>


- Industry standard TO-247AC package 

- Lead-Free 

## **Benefits** 

- Higher switching frequency capability  than competitive IGBTs 

- Highest efficiency available 

- Much  lower conduction losses than MOSFETs 

- More efficient than short circuit rated IGBTs 

TO-247AC 

## **Absolute Maximum Ratings** 

|~~a~~<br>~~a~~|**Parameter**<br>~~a~~|**Max.**<br>~~a~~|**Units**<br>~~a~~|
|---|---|---|---|
|VCES<br>~~a~~<br>~~a~~<br>es|Collector-to-Emitter Breakdown Voltage<br>~~a~~|1200<br>~~a~~|V<br>~~a~~|
|IC@ TC= 25°C<br>~~a~~<br>es<br>ns|Continuous Collector Current|41|A|
|IC@ TC= 100°C<br>es<br>ns<br>es~~eo~~|Continuous Collector Current<br>~~eo~~|21<br>~~eo~~||
|ICM<br>ns<br>es~~eo~~<br>Re|Pulsed Collector Current<br>~~eo~~<br>>|82<br>~~eo~~||
|ILM<br>es~~eo~~<br>Re<br>es|Clamped Inductive Load Current<br>~~eo~~<br>><br>nD|82<br>~~eo~~||
|VGE<br>Re<br>es<br>Rs|Gate-to-Emitter Voltage<br>><br>nD<br>©|± 20|V|
|EARV<br>es<br>Rs|Reverse Voltage Avalanche Energy<br>nD<br>©|270|mJ|
|PD@ TC= 25°C<br>Rs<br>a<br>~~es~~|Maximum Power Dissipation<br>©<br>a<br>~~ee~~|160|W<br>~~po~~|
|PD@ TC= 100°C<br>~~es~~<br>~~po~~|Maximum Power Dissipation<br>~~ee~~<br>~~po~~|65<br>~~po~~||
|TJ<br>TSTG<br>~~es~~<br>~~po~~<br>~~es~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~<br>~~po~~|-55  to + 150<br>~~po~~|°C<br>~~po~~<br>~~en~~|
|~~po~~<br>~~es~~<br>~~esen~~|SolderingTemperature, for 10 seconds<br>~~po~~<br>~~en~~|300(0.063 in.(1.6mm)from case)<br>~~po~~<br>~~en~~||
|~~po~~<br>~~es~~<br>~~esen~~|Mounting torque, 6-32 or M3 screw.<br>~~po~~<br>~~en~~|10 lbf•in (1.1N•m)<br>~~po~~<br>~~en~~|~~po~~<br>~~en~~|



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|0.77|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.24|–––||
|RθJA|Junction-to-Ambient,  typical socket mount|–––|40||
|Wt|Weight|6 (0.21)|–––|g (oz)|



## IRG4PH40UPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>1200<br>—<br>—<br>V<br>VGE= 0V, IC= 250µA<br>V(BR)ECS<br>Emitter-to-Collector Breakdown Voltage<br>18<br>—<br>—<br>V<br>VGE= 0V, IC= 1.0A<br>∆V(BR)CES/∆TJ<br>Temperature Coeff. of Breakdown Voltage<br>—<br>0.43<br>—<br>V/°C<br>VGE= 0V, IC= 1.0mA<br>—<br>2.43<br>3.1<br>IC= 21A                          VGE= 15V<br>VCE(ON)<br>Collector-to-Emitter Saturation Voltage<br>—<br>2.97<br>—<br>IC= 41A<br>See Fig.2, 5<br>—<br>2.47<br>—<br>IC= 21A , TJ= 150°C<br>VGE(th)<br>Gate Threshold Voltage<br>3.0<br>—<br>6.0<br>VCE= VGE, IC= 250µA<br>∆VGE(th)/∆TJ<br>Temperature Coeff. of Threshold Voltage<br>—<br>-11<br>—<br>mV/°C VCE= VGE, IC= 250µA<br>gfe<br>Forward Transconductance<br>16<br>24<br>—<br>S<br>VCE =100V, IC= 21A<br>—<br>—<br>250<br>VGE= 0V, VCE= 1200V<br>—<br>—<br>2.0<br>µA<br>VGE= 0V, VCE= 10V, TJ= 25°C<br>—<br>—<br>5000<br>VGE= 0V, VCE= 1200V, TJ= 150°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>ICES<br>Zero Gate Voltage Collector Current<br>V<br>i<br>rs rsrs se<br>ss<br>Gs<br>Sn<br>eeee<br>|<br>||<br>|tT<br>|tT<br>ies<br>~~Gs~~<br>~~a GQ~~<br>~~eG~~<br>~~QO~~<br>~~|~~<br>|<br>~~PO~~<br>—— ~~PO~~<br>~~es ee~~<br>~~GG~~|
|---|
|**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br>**Conditions**<br>Qg<br>Total Gate Charge (turn-on)<br>—<br>86<br>130<br>IC= 21A<br>eeee<br>a|
|Qge<br>Gate - Emitter Charge (turn-on)<br>—<br>13<br>20<br>nC<br>VCC= 400V<br>See Fig. 8<br>Qgc<br>Gate - Collector Charge(turn-on)<br>—<br>29<br>44<br>VGE= 15V<br>td(on)<br>Turn-On Delay Time<br>—<br>24<br>—<br>a<br>~~Re~~<br>~~a~~|
|tr<br>Rise Time<br>—<br>24<br>—<br>TJ= 25°C<br>td(off)<br>Turn-Off Delay Time<br>—<br>220<br>330<br>IC= 21A, VCC= 960V<br>tf<br>Fall Time<br>—<br>180<br>270<br>VGE= 15V, RG= 10Ω<br>Eon<br>Turn-On Switching Loss<br>—<br>1.04<br>—<br>Energy losses include "tail"<br>Eoff<br>Turn-Off Switching Loss<br>—<br>3.40<br>—<br>mJ<br>See Fig. 9, 10, 14<br>Ets<br>Total Switching Loss<br>—<br>4.44<br>5.2<br>td(on)<br>Turn-On Delay Time<br>—<br>24<br>—<br>TJ= 150°C,<br>tr<br>Rise Time<br>—<br>25<br>—<br>IC= 21A, VCC= 960V<br>td(off)<br>Turn-Off Delay Time<br>—<br>310<br>—<br>VGE= 15V, RG= 10Ω<br>tf<br>Fall Time<br>—<br>380<br>—<br>Energy losses include "tail"<br>Ets<br>Total Switching Loss<br>—<br>7.39<br>—<br>mJ<br>See Fig. 11, 14<br>LE<br>Internal Emitter Inductance<br>—<br>13<br>—<br>nH<br>Measured 5mm from package<br>Cies<br>Input Capacitance<br>—<br>1800<br>—<br>VGE= 0V<br>Coes<br>Output Capacitance<br>—<br>120<br>—<br>pF<br>VCC= 30V<br>See Fig. 7<br>Cres<br>Reverse Transfer Capacitance<br>—<br>18<br>—<br>ƒ = 1.0MHz<br>ns<br>ns<br>a<br>a<br>esee<br>Rees<br>ee<br>Re<br>a<br>eSRe<br>a<br>eeDs<br>a<br>eees<br>ee<br>aes<br>ee|



## **Notes:** 

Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) 

VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10 Ω , (See fig. 13a) 

Pulse width ≤ 80µs; duty factor ≤ 0.1%. 

Pulse width 5.0µs, single shot. 

Repetitive rating; pulse width limited by maximum junction temperature. 

www.irf.com 

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## IRG4PH40UPbF 

**==> picture [434 x 488] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>F or both : Trian gu lar w a ve :<br>D uty cycle: 50%<br>T   = 125°CJ I<br>40 a T        = 90°Cs ink el e e<br>G ate drive as specified<br>h I Po w er D issip ation  =  35 W C lam p  voltage:<br>80 %  o f ra ted<br>30<br>Sq u are wave:<br>60 %  of rated<br>        voltag e<br>20<br>TW SS ot<br>I<br>10 li l ll<br>Ideal diodes<br>0 St I Cee<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1  - Typical Load Current vs. Frequency<br>  (Load Current = IRMS of fundamental)<br> 100  100<br>T  = 150  CJ o<br> 10 ee T  = 150  CJ o  Ae  10 nny 44annee<br>T  = 25  CJ o<br>T  = 25  CJ o<br>pf f p on 7 ee i<br>| // Pot tT 7 vit i fi | |<br>V      = 15VGE V      = 50VCC<br>20µs PULSE WIDTH Lt 5µs PULSE WIDTH<br> 1 ff  1 iA<br> 1  10 5 6 7 8 9 10<br>V     , Collector-to-Emitter Voltage (V)CE V     , Gate-to-Emitter Voltage (V)GE<br>Load Current ( A )<br>C C<br>I   ,  Collector-to-Emitter Current (A) I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** - Typical Output Characteristics 

**Fig. 3** - Typical Transfer Characteristics 

www.irf.com 

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## IRG4PH40UPbF 

**==> picture [433 x 477] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 4.0<br>V      = 15VGE<br>80 us PULSE WIDTH I   =       AC 42<br>PT ttt TT Ly<br>40<br>iBNEff tT PT |<br>EE Ops<br>3.0<br>30<br>I   =       AC 21<br>SoS ca 00<br>20 rTP PTINNOT nePooee eeeHLaeoe I   =       AC 10.5 =<br>2.0<br>See S H<br>10<br>pT PE<br>PT TTT TTT NY PEEEEE<br>0 PEEP EET IN 1.0 PEE EEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (    C)C ° TT   , Junction Temperature (  C)J , Junction Temperature ( °C )J °<br>Fig. 4  - Maximum Collector Current vs. Case Fig. 5  - Typical Collector-to-Emitter  Voltage<br>Temperature vs. Junction Temperature<br> 1 SSS eeorn<br>D = 0.50<br>ee e ee<br>N 0.20 =e||<br>0.1 ' 0.10 © ee | AA Aeet<br>ee eee ee eee PDM<br>e 0.05 te t1<br>0.02 SINGLE PULSE t 2<br>p>eae 0.01 seep (THERMAL RESPONSE) C C Notes:<br>1. Duty factor D = t   / t1 2<br>TH | TTT 2. Peak TJ = PDM x  Z thJC + TC<br>0.01 alll TLE<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


**Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case 

www.irf.com 

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## IRG4PH40UPbF 

**==> picture [212 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
4000<br>VGE = 0V, f = 1MHz<br>Cies = Cge + Cgc , C      SHORTEDce<br>Cres = Cgc<br>Coes = Cce + Cgc<br>3000 SS C<br>Cies<br>2000 aBSCENX e NWallllll<br>1000 | Coes ll<br>a Cres S l<br>a k<br>0 i eee<br> 1  10  100<br>V     , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [202 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>VCC = 400V<br>I C = 21A<br>16<br>12 EEG<br>PTT Ev TT<br>Wa<br>8<br>pit ity |<br>yr}<br>4<br>PA | | | tt<br>7<br>0 JETT EEE<br>0 20 40 60 80 100<br>Q   , Total Gate Charge (nC)G<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7 -** Typical Capacitance vs. Collector-to-Emitter Voltage 

**Fig. 8** - Typical Gate Charge vs. Gate-to-Emitter Voltage 

**==> picture [434 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0  100<br>V      = 960VCC R      = OhmG 10 Ω<br>V      = 15VT      = 25   CJGE ° V      = 15VV      = 960VGECC<br>4.8 I       = 21AC I   =       AC 42<br>H e  10 e POPC t I   =       AC 21<br>4.6<br>> Se GE Gees Ge e522: canuce I   =       AC 10.5<br>4.4<br> 1<br>4.2 PePt PP PEeee tt pteertt<br>Pi tT] tty | tl PE EE EE<br>4.0 Pt tT]Tt tT]pet yyttt 0.1 OnPEE08 G8 08EEL0 ELEOO LLL<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R    , Gate Resistance (Ohm)GRG , Gate Resistance (  Ω ) T  , Junction Temperature (  C )J °<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typical Switching Losses vs. Gate Resistance 

**Fig. 10** - Typical Switching Losses vs. Junction Temperature 

www.irf.com 

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## IRG4PH40UPbF 

**==> picture [196 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
25.0<br>R      = OhmG 10 Ω<br>T      = 150  CJ °<br>V      = 960VCC<br>20.0 V      = 15VGE rT 1m4na/<br>RRR Pr<br>15.0<br>10.0 | ||| | mA| | | |<br>7<br>5.0<br>Sn 4eeeeeeeVA<br>0.0<br>0 10 20 30 40 50<br>I    , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


**Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current 

**==> picture [202 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br>V      = 20VGE<br>T      = 125  CJ o<br>| | | | |<br> 100<br>EN<br>PT| | |<br> 10 0| ae<br>SAFE OPERATING AREA<br> 1 RAE| Aa| | |<br>| EN<br> 1  10  100  1000  10000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


**Fig. 12** - Turn-Off SOA 

www.irf.com 

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## IRG4PH40UPbF 

**==> picture [416 x 490] intentionally omitted <==**

**----- Start of picture text -----**<br>
L D.U.T.<br>50V V  *C 0 - 960V RL = 4 X I960VC@25°C<br>1000V 480µF<br>960V<br>(2)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V pow er supply, pulse width and inductor<br>   w ill increase to obtain rated Id.<br>Fig. 13a  - Clamped Inductive Fig. 13b  - Pulsed Collector<br>Load Test Circuit Current Test Circuit<br>I C<br>L<br>Driver* D.U.T. Fig. 14a  - Switching Loss<br>fs, THO VC — Test Circuit<br>50V<br>1000V<br>* Driver same type<br>Ll we ag   as D.U.T., VC = 960V<br>®<br>Jo \<br>90%<br>10%<br>ee<br>VC<br>90% t d (off) Fig. 14b  - Switching Loss<br>Waveforms<br>I C 5% 1 0%<br>t r t f<br>t d(o n ) t=5µs<br>E o n E o ff<br>E   = (E     +E     )ts        o n       o ff<br>**----- End of picture text -----**<br>


www.irf.com 

7 

## IRG4PH40UPbF 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

**==> picture [410 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO  035H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line a DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>Data and specifications subject to change without notice.<br>TOR Rectifie<br>IR WORLD HEADQUARTERS:  233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105<br>TAC Fax: (310) 252-7903<br>Visit us at www.irf.com for sales contact information .  04/04<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4ph40upbf/igbt-1200v-30a-to-247ac/dp/8650691)
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