# IGBT, 70 A, 1.79 V, 200 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:9105123/)

**URL**: https://novapart.co/products/IRG4PC50FDPBF/igbt-70-a-179-v-200-w-600-to-247ac-3-pins
**SKU**: IRG4PC50FDPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €4.9800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | IRG4 |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 70A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.79V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9105123/)

PD -95225 

## IRG4PC50FDPbF 

## INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE **Features** 

Fast CoPack IGBT 

- Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). 

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C<br>VCES = 600V<br>V =  1.45V<br>CE(on) typ.<br>G<br>@VGE = 15V, IC = 39A<br>E<br>n-channel<br>**----- End of picture text -----**<br>


- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 

- IGBT co-packaged with HEXFRED[TM] ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations 

- Industry standard TO-247AC package 

- Lead-Free 

## **Benefits** 

- Generation -4 IGBT's offer highest efficiencies available 

- IGBT's optimized for specific application conditions 

- HEXFRED diodes optimized for performance with IGBT's .  Minimized recovery characteristics require less/no snubbing 

- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's 

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TO-247AC<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~ee~~|~~ts~~|||
|---|---|---|---|
|~~ee~~|**Parameter**<br>~~ts~~|**Max.**|**Units**|
|VCES<br>~~ee~~<br>~~a~~<br>~~«S-cAN™$@™"—@—"@”~~|Collector-to-Emitter Voltage<br>~~ts~~<br>~~a~~<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|600<br>~~TtlrvOVT———~~|V<br>~~TtlrvOVT———~~|
|IC@ TC= 25°C<br>~~«S-cAN™$@™"—@—"@”~~|Continuous Collector Current<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|70<br>~~TtlrvOVT———~~|A<br>~~TtlrvOVT———~~|
|IC@ TC= 100°C<br>~~«S-cAN™$@™"—@—"@”~~<br>~~a~~<br>~~oo~~|Continuous Collector Current<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~<br>~~a~~|39<br>~~TtlrvOVT———~~||
|ICM<br>~~a ~~<br>~~oo~~|Pulsed Collector Current<br> ~~a~~|280||
|ILM<br>~~oo~~<br>~~ooo~~|Clamped Inductive Load Current<br>~~ooo~~|280<br>~~ooo~~||
|IF@ TC= 100°C<br>~~ooo~~<br>~~a~~|Diode Continuous Forward Current<br>~~ooo~~<br>~~a~~<br>~~a~~|25<br>~~ooo~~||
|IFM<br>~~a~~<br>~~a~~|Diode Maximum Forward Current<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|280||
|VGE<br>~~a~~<br>~~a~~|Gate-to-Emitter Voltage<br>~~a~~<br>~~a~~<br>|± 20<br>|V<br>|
|PD@ TC= 25°C<br>~~ass~~|Maximum Power Dissipation<br>~~ss~~|200<br>~~ss~~|W<br>~~ss~~|
|PD@ TC= 100°C<br>~~ss~~<br>~~a~~|Maximum Power Dissipation<br>~~ss~~<br>~~a~~<br>~~a~~|78<br>~~ss~~||
|TJ<br>TSTG<br>~~a~~<br>~~«S-cAN™$@™"—@—"@”~~|Operating Junction and<br>Storage Temperature Range<br>~~aee~~<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|-55  to +150<br>~~ee~~<br>~~TtlrvOVT———~~|°C<br>~~ee~~<br>~~TtlrvOVT———~~|
|~~«S-cAN™$@™"—@—"@”~~|SolderingTemperature,for 10 sec.<br>~~ee~~<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~|300(0.063 in.(1.6mm)from case)<br>~~ee~~<br>~~TtlrvOVT———~~||
|~~«S-cAN™$@™"—@—"@”~~<br>~~a ~~|MountingTorque,6-32 or M3 Screw.<br>~~«S-cAN™$@™"—@—"@”~~<br>~~TtlrvOVT———~~<br> ~~a~~|10 lbf•in(1.1 N•m)<br>~~TtlrvOVT———~~|~~TtlrvOVT———~~|



## **Thermal Resistance** 

||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RθJC|Junction-to-Case - IGBT|------|------|0.64|°C/W|
|RθJC|Junction-to-Case - Diode|------|------|0.83||
|RθCS|Case-to-Sink,flat, greased surface|------|0.24|------||
|RθJA|Junction-to-Ambient,typical socket mount|-----|-----|40||
|Wt|Weight|------|6(0.21)|------|g (oz)|



04/29/04 

## IRG4PC50FDPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>600<br>----<br>----<br>V<br>VGE= 0V, IC= 250µA<br>∆V(BR)CES/∆TJ<br>Temperature Coeff. of Breakdown Voltage<br>----<br>0.62<br>----<br>V/°C<br>VGE= 0V, IC= 1.0mA<br>VCE(on)<br>Collector-to-Emitter Saturation Voltage<br>----<br>1.45<br>1.6<br>IC= 39A<br>VGE= 15V<br>----<br>1.79<br>----<br>V<br>IC= 70A<br>See Fig. 2, 5<br>----<br>1.53<br>----<br>IC= 39A, TJ= 150°C<br>VGE(th)<br>Gate Threshold Voltage<br>3.0<br>----<br>6.0<br>VCE= VGE, IC= 250µA<br>∆VGE(th)/∆TJ<br>Temperature Coeff. of Threshold Voltage<br>----<br>-14<br>----<br>mV/°C<br>VCE= VGE, IC= 250µA<br>gfe<br>Forward Transconductance<br>21<br>30<br>----<br>S<br>VCE= 100V, IC= 39A<br>ICES<br>Zero Gate Voltage Collector Current<br>----<br>----<br>250<br>µA<br>VGE= 0V, VCE= 600V<br>----<br>----<br>6500<br>VGE= 0V, VCE= 600V, TJ= 150°C<br>VFM<br>Diode Forward Voltage Drop<br>----<br>1.3<br>1.7<br>V<br>IC= 25A<br>See Fig. 13<br>----<br>1.2<br>1.5<br>IC= 25A,TJ= 150°C<br>IGES<br>Gate-to-Emitter Leakage Current<br>----<br>----<br>±100<br>nA<br>VGE= ±20V<br>~~a~~<br>~~rs ters te (es~~<br>~~Ps<Q~~<br>~~PsOQ~~<br>~~| |~~<br>~~|ft~~<br>~~|ft~~<br>~~PRRsOO~~<br>~~PsOO~~<br>~~EE~~<br>~~Yt~~<br>~~Rt~~<br>~~a~~<br>~~|ft~~<br>~~es~~|
|---|
|**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min.**<br>**Typ. Max.**<br>**Units**<br> **Conditions**<br>Qg<br>Total Gate Charge(turn-on)<br>----<br>190<br>290<br>IC= 39A<br>Qge<br>Gate - Emitter Charge(turn-on)<br>----<br>28<br>42<br>nC<br>VCC= 400V<br>See Fig. 8<br>Qgc<br>Gate - Collector Charge(turn-on)<br>----<br>65<br>97<br>VGE= 15V<br>td(on)<br>Turn-On DelayTime<br>----<br>55<br>----<br>TJ= 25°C<br>tr<br>Rise Time<br>----<br>25<br>----<br>ns<br>IC= 39A, VCC= 480V<br>td(off)<br>Turn-Off DelayTime<br>----<br>240<br>360<br>VGE= 15V, RG= 5.0Ω<br>tf<br>Fall Time<br>----<br>140<br>210<br>Energy losses include "tail" and<br>Eon<br>Turn-On SwitchingLoss<br>----<br>1.5<br>----<br>diode reverse recovery.<br>Eoff<br>Turn-Off SwitchingLoss<br>----<br>2.4<br>----<br>mJ<br>See Fig. 9, 10, 11, 18<br>Ets<br>Total SwitchingLoss<br>----<br>3.9<br>5.0<br>td(on)<br>Turn-On DelayTime<br>----<br>59<br>----<br>TJ= 150°C,     See Fig. 9, 10, 11, 18<br>tr<br>Rise Time<br>----<br>27<br>----<br>ns<br>IC= 39A, VCC= 480V<br>td(off)<br>Turn-Off DelayTime<br>----<br>400<br>----<br>VGE= 15V, RG= 5.0Ω<br>tf<br>Fall Time<br>----<br>260<br>----<br>Energy losses include "tail" and<br>Ets<br>Total SwitchingLoss<br>----<br>6.5<br>----<br>mJ<br>diode reverse recovery.<br>LE<br>Internal Emitter Inductance<br>----<br>13<br>----<br>nH<br>Measured 5mm frompackage<br>Cies<br>Input Capacitance<br>----<br>4100<br>----<br>VGE= 0V<br>Coes<br>Output Capacitance<br>----<br>250<br>----<br>pF<br>VCC= 30V<br>See Fig. 7<br>Cres<br>Reverse Transfer Capacitance<br>----<br>49<br>----<br>ƒ= 1.0MHz<br>trr<br>Diode Reverse Recovery Time<br>----<br>50<br>75<br>ns<br>TJ= 25°C    See Fig.<br>----<br>105<br>160<br>TJ= 125°C        14            IF= 25A<br>Irr<br>Diode Peak Reverse Recovery Current<br>----<br>4.5<br>10<br>A<br>TJ= 25°C    See Fig.<br>----<br>8.0<br>15<br>TJ= 125°C        15          VR= 200V<br>Qrr<br>Diode Reverse Recovery Charge<br>----<br>112<br>375<br>nC<br>TJ= 25°C     See Fig.<br>----<br>420<br>1200<br>TJ= 125°C         16        di/dt 200A/µs<br>di(rec)M/dt<br>Diode Peak Rate of Fall of Recovery<br>----<br>250<br>----<br>A/µs<br>TJ= 25°C     See Fig.<br>Duringtb<br>----<br>160<br>----<br>TJ= 125°C        17<br>~~a es~~<br>~~ee ee es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~Ps~~<br>~~es~~<br>~~Ps~~<br>~~es~~<br>~~es~~<br>~~a~~<br>~~es~~<br>~~Ps~~<br>~~es~~<br>~~Ps~~<br>~~esee~~<br>~~Bser~~<br>~~es~~<br>~~es~~<br>~~Psff~~<br>~~Se~~<br>~~OL~~<br>~~Ff~~<br>~~EEE~~<br>~~ES~~<br>~~|~~<br>~~|~~<br>~~fe~~<br>~~Se~~<br>~~LL~~<br>~~| ft~~<br>~~fe~~<br>~~OL~~<br>~~Ft~~|



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## IRG4PC50FDPbF 

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50<br>Duty cycle: 50%<br>T   =  125°CJ<br>T        = 90°Csink<br>40 ee l Gate drive  as specified<br>Turn-on losses include<br>effects of reverse recovery<br>Pow er D iss ipation =  40W<br>30 IPUTTHE N<br>60%  of rated<br>         voltage<br>20<br>LANE EP LT<br>10<br>Oe TNEECAPTTT]<br>ee yy Bian A<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1  - Typical Load Current vs. Frequency<br>  (Load Current = IRMS of fundamental)<br>1000 SSS Seat 1000 Pe<br>FP fe ta rey yf yey<br>100 a Tain 100 ft Lee<br>T  = 150°CJ<br>T  = 25°CJ<br>= T  = 150°CJ Str ee oy 7 O e<br>10 10<br>T  = 25°CJ<br>See e r e V e te e 4 r e<br>| eeeeeett| oo Geeon<br>V     = 15VGE V      = 50VCC<br>1 | pf 20µs PULSE W ID TH A 1 fteA| ft 5µs PULSE W IDTH  ee A<br>0.1 1 10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Em itter Voltage (V)C E V    , G ate-to-Em itter Voltage (V)GE<br>I   , Collector-to-Em itter Current (A)C I   , Collector-to-E m itter C urrent (A)C<br>Load Current  ( A )<br>**----- End of picture text -----**<br>


**Fig. 2** - Typical Output Characteristics 

**Fig. 3** - Typical Transfer Characteristics 

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## IRG4PC50FDPbF 

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70 2.5<br>V      = 15V G E  V      = 15VGE<br> 80µs PU LSE W IDTH<br>60<br>a P N So LEE EL<br>50 I    = 78AC<br>_| N_++— 2.0 PEELE E L<br>40<br>eee ne<br>30<br>I    = 39AC<br>ptSEN E tfS 1.5 Lyei<br>20 oe oe ee fii tt<br>10 ee ee I    = 20AC<br>0 e e e e ee 1.0 peaan LLELLEETTSt nna A<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Tem perature (°C)C T  , Junction Tem perature  (°C )J<br>Fig. 4  - Maximum Collector Current vs. Fig. 5  - Typical Collector-to-Emitter  Voltage<br>Case Temperature vs. Junction Temperature<br>1<br>Ty)<br>SEE | LLL on<br>D = 0.50<br>ii iamass?"EC cemet<br>0.20 UI} aati<br>0.1 [oS] [ot]<br>eadtesan [i] Zs<br>0.10<br>PDM<br>0.05 t<br>1<br>m e t 2<br>0.02       SINGLE PULSE<br>(THERMAL RESPO NSE) N otes:<br>0.01 1. D uty factor D  =  t   / t 1 2<br>S A i<br>2. P eak T  = P       x Z         +  T                                  J D M thJC C<br>0.01 ee  cillll 1 iii) TMTTE LL<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , R ectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A) CE<br>V     , C ollector-to-Em itter Voltage (V)<br>thJC<br>Therm al Response (Z       )<br>**----- End of picture text -----**<br>


**Fig. 6** - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 

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## IRG4PC50FDPbF 

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8000  VGE = 0V                 f = 1 MHz<br> Cies = Cge   +  Cgc  + Cce           SHORTED<br> Cres = Cce<br> Coes = Cce  + Cgc<br>co)<br>6000<br>C ies<br>4000<br>a lll<br>C oes<br>2000 SS SN ef<br>C res<br>0<br>1 PoE 10 100<br>V    , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig. 7 -** Typical Capacitance vs. Collector-to-Emitter Voltage 

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5.00<br> V      = 480VCC<br> V      = 15VGE<br> T      = 25°CJ<br>  I      = 39AC<br>4.50<br>4.00<br>3.50<br>0 10 20 30 40 50 60<br>R   , Gate Resistance (G     Ω )<br>Total Switchig Losses  (mJ)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typical Switching Losses vs. Gate Resistance 

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20<br> V      = 400VC E<br>  I      = 39AC<br>16 Eee<br>12<br>TT A<br>8<br>pf | ww |<br>4<br>0<br>O Z EE EE<br>0 40 80 120 160 200<br>Q   , To tal G a te C ha rge  (n C )g<br>G E<br>V     , G ate-to-E m itter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 8** - Typical Gate Charge vs. Gate-to-Emitter Voltage 

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100<br> R      = 5.0 G Ω<br> V      = 15VGE Pp<br> V      = 480VCC<br>Seen eeePPee ee eeeeee4<br>ae Oo been Ue DED I    = 78AC<br>10 e y<br>Gana Geaeeene seaeeee= I    = 39AC  =a<br>Le y<br>I    = 20AC<br>TTT yl ee<br>T e<br>1 srrtt<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (°C)J<br>Total Switchig Losses  (mJ)<br>**----- End of picture text -----**<br>


**Fig. 10** - Typical Switching Losses vs. Junction Temperature 

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## IRG4PC50FDPbF 

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16 1000<br> R      = 5.0 G Ω  V     = 20VG EG E<br> T      = 150°CJ  T     = 125°CJ<br> V      = 480VCC<br>MR Sse See<br> V      = 15VGE<br>12<br> SAFE OPERATING AREA<br>100<br>8 7, Ty<br>10<br>FARtI<br>4<br>eet A<br>ener meme i<br>|<br>0 A 1 a| il<br>0 20 40 60 80 1 10 100 1000<br>I   , Collector-to-Emitter Current (A)C V      , Collector-to-E m itter V oltage (V )C E<br>Total Switchig Losses  (mJ)<br>I   , Collector-to-E m itter Current (A)C<br>**----- End of picture text -----**<br>


**Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current 

**Fig. 12** - Turn-Off SOA 

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100<br>ee eee ee / Ae ee<br>PF|| Lflt<br>WL T  = 150°CJ 1<br>T  = 125°CJ<br>10 T  =   25°CJ<br>lA<br>Been<br>|2Welveer| |<br>HE Py<br>1 HELL<br>0.6 1.0 1.4 1.8 | 2.2 2.6<br> Forward Voltage Drop - V      (V)FM<br>F<br>Instantaneous Forward C urrent - I    (A)<br>**----- End of picture text -----**<br>


**Fig. 13** - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 

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## IRG4PC50FDPbF 

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140<br>V  = 200VR<br>T  = 125°CJ<br>120 = T  = 25°CJ<br>.<br>100 se tS + | td]<br>“ss =-s<br>80 I   = 50AF<br>I   F = 25A<br>I   = 10AF<br>60<br>NNTT SE<br>TO<br>40<br>20<br>100 1000<br>di  /dt - (A/µs)f<br>rr<br>t    -  (ns)<br>**----- End of picture text -----**<br>


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100 a ee<br>V  = 200VR<br>T  = 125°CJ<br>T  = 25°CJ<br>oe<br>eee<br>I   = 50AF<br>eee]<br>I   = 25AF<br>10 EE<br>I   = 10AF<br>ea<br>1<br>100 1000<br>di  /dt - (A/µs)f<br>IRRM<br>I         - (A)<br>**----- End of picture text -----**<br>


**Fig. 14** - Typical Reverse Recovery vs. dif/dt 

**Fig. 15** - Typical Recovery Current vs. dif/dt 

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1500 10000<br>V  = 200VR V  = 200VR<br>T  = 125°CJ T  = 125°CJ<br>T  = 25°CJ T  = 25°CJ<br>1200<br>900<br>I   = 50AF I   = 10AF<br>5 of 1000 LOA<br>ai 7<br>600 +___ ¢ ¢\i@<br>I   = 25AF <Ne *? eoNogeou™ \Pid eo e Wiy L. @?0 ee",<br>aa oot Ky. ? Y | LF<br>o? oe NX id se I   = 25AF<br>300<br>eect 207 Fan | ene TT]<br>ee I   = 10AF Zim I   = 50AF<br>0 100 oo” oo”<br>100 1000 100 1000<br>di  /dt - (A /µs)f di  /dt - (A /µs)f<br>RR<br>Q        -  (nC )<br>di(rec)M /dt  -  (A/µs)<br>**----- End of picture text -----**<br>


**Fig. 16** - Typical Stored Charge vs. dif/dt 

**Fig. 17** - Typical di(rec)M/dt vs. dif/dt 

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## IRG4PC50FDPbF 

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Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>i e<br>Fig. 18a  - Test Circuit for Measurement of<br>ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf<br>**----- End of picture text -----**<br>


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90%  Vge<br>+Vge<br>Vce<br>90%  Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =  Vce ic dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>


**Fig. 18b** - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf 

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GATE VO LTAG E D.U.T.<br>10%  +Vg<br>+Vg<br>DUT VO LTAGE<br>Vce<br>AND CURRENT<br>10%  Ic<br>Vcc 90% Ic Ipk<br>Ic<br>5%  Vce<br>td(on) tr t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>


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trr<br>trr<br>Q rr =  id dt<br>Ic<br>tx<br>tx<br>10%  Irr<br>10%  Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>W AVEFORMS<br>t4<br>Erec = Vd id dt<br>t3<br>DIO DE REVERSE<br>RECOVERY ENERG Y<br>t3 t4<br>∫<br>∫<br>**----- End of picture text -----**<br>


**Fig. 18c** - Test Waveforms for Circuit of  Fig. 18a, Defining Eon, td(on), tr 

**Fig. 18d** - Test Waveforms for Circuit of  Fig. 18a, Defining Erec, trr, Qrr, Irr 

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## IRG4PC50FDPbF 

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Vg GATE SIG NAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br>


Figure 18e. Macro Waveforms for Figure 18a's Test Circuit 

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**----- Start of picture text -----**<br>
1000VL V *c D.U.T. 0 - 480V RL= 4 X I480VC @25°C<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br>


Figure 19. Clamped Inductive Load Test Circuit 

Figure 20. Pulsed Collector Current Test Circuit 

www.irf.com 

9 

## IRG4PC50FDPbF 

## Notes: 

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 5.0 Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

**==> picture [409 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: T HIS  IS  AN IRFPE30<br>WIT H AS S EMBLY  PART  NUMBER<br>LOT  CODE 5657 INT ERNAT IONAL<br>AS S EMBLED ON WW 35, 2000 RECTIFIER IRFPE 30<br>LOGO  035H<br>IN THE AS S EMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line DAT E CODE<br>position indicates "Lead-Free" AS S EMBLY YEAR 0 =  2000<br>LOT  CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRG4PC50FDPBF/igbt-70-a-179-v-200-w-600-to-247ac-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4pc50fdpbf/igbt-to-247/dp/9105123)
---

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